JPS63316308A - Thin film magnetic head - Google Patents
Thin film magnetic headInfo
- Publication number
- JPS63316308A JPS63316308A JP15197587A JP15197587A JPS63316308A JP S63316308 A JPS63316308 A JP S63316308A JP 15197587 A JP15197587 A JP 15197587A JP 15197587 A JP15197587 A JP 15197587A JP S63316308 A JPS63316308 A JP S63316308A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetic
- magnetic layer
- sputtering
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 105
- 239000010409 thin film Substances 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 8
- 238000000926 separation method Methods 0.000 claims abstract description 8
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 5
- 239000007769 metal material Substances 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 abstract description 105
- 238000004544 sputter deposition Methods 0.000 abstract description 19
- 239000013078 crystal Substances 0.000 abstract description 10
- 229910000702 sendust Inorganic materials 0.000 abstract description 9
- 239000011261 inert gas Substances 0.000 abstract description 6
- 125000006850 spacer group Chemical group 0.000 abstract description 5
- 239000011229 interlayer Substances 0.000 abstract description 3
- 229910000859 α-Fe Inorganic materials 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 17
- 230000035699 permeability Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000002500 effect on skin Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
- G11B5/3143—Disposition of layers including additional layers for improving the electromagnetic transducing properties of the basic structure, e.g. for flux coupling, guiding or shielding
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/147—Structure or manufacture of heads, e.g. inductive with cores being composed of metal sheets, i.e. laminated cores with cores composed of isolated magnetic layers, e.g. sheets
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は高密度の磁気記録、再生に好適な薄膜磁気ヘッ
ドに関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a thin film magnetic head suitable for high-density magnetic recording and reproduction.
仲） 従来の技術
従来、この種の！４膜磁気ヘッドとしては、例えば、特
開昭６２−４６４１６号公報（３１１Ｂ５／３１）等に
開示されているものがある。Naka) Conventional technology Conventionally, this kind of! As a four-film magnetic head, there is one disclosed, for example, in Japanese Patent Laid-Open No. 62-46416 (311B5/31).
第５図は従来の薄膜磁気ヘッドの要部断面図である。FIG. 5 is a sectional view of a main part of a conventional thin film magnetic head.
図中、（１１はフェライト、結晶化ガラス等の材料ニジ
なる基板で、該基板ｔｌｌ上にはセンダスト、）く−Ｖ
ａイ、Ｏｏ系アモルファス磁性金属等よりなる下部磁性
層１２）、５ｉ０２等からなるギャップスペーサ（３）
、Ｏｕ等からなる導体コイル層（４）、８１０２等から
なる層間絶縁層（５）、及び前記下部磁性層（２）と同
じ材料よりなる上部磁性層（６）が夫々形成されている
。＋７１はＴ１酸Ｂａ等のセラミック材料よりなる保護
板で、低融点ガラス（８１等により上部磁性層（６）に
接合されている。In the figure, (11 is a substrate made of a material such as ferrite or crystallized glass, and Sendust is placed on the substrate tll).
Lower magnetic layer 12) made of a, Oo-based amorphous magnetic metal, etc., gap spacer (3) made of 5i02, etc.
, an interlayer insulating layer (5) made of 8102 or the like, and an upper magnetic layer (6) made of the same material as the lower magnetic layer (2). +71 is a protective plate made of a ceramic material such as T1-acid Ba, and is bonded to the upper magnetic layer (6) by low melting point glass (81 or the like).
しかし乍ら、上記従来の薄膜磁気ヘッドを高周波領域で
使用した場合、下部磁性層（２）及び上部磁性層（６）
に渦電流が生じ、表皮効果により前記磁性層１２）ｔ６
）の極表層の部分にしか磁束は流れず、前記磁性層１２
）（６）の透磁率μは低下する所謂渦電流損失が生じる
。即ち、この従来の薄膜磁気ヘッドは、高周波領域では
良好な記録再生を行うことが出来なかつた。However, when the above conventional thin film magnetic head is used in a high frequency region, the lower magnetic layer (2) and the upper magnetic layer (6)
An eddy current is generated in the magnetic layer 12) t6 due to the skin effect.
) The magnetic flux flows only in the extreme surface layer of the magnetic layer 12.
) (6) The magnetic permeability μ decreases, causing so-called eddy current loss. That is, this conventional thin film magnetic head was unable to perform good recording and reproduction in the high frequency range.
また、上述の欠点を解消するために、例えば特開昭６０
−３２１０７号公報（０１１ＢＳ／１２７）等に開示さ
れて−るように、センダスト等め強磁性金属材料を８・
１０２等の高硬度絶縁膜を介してスバツタリングによシ
積層形成した薄膜磁気ヘッドが提案されている。In addition, in order to eliminate the above-mentioned drawbacks, for example,
As disclosed in Publication No. 32107 (011BS/127) etc., ferromagnetic metal materials such as Sendust etc.
A thin film magnetic head has been proposed in which a high hardness insulating film such as No. 102 is laminated by sputtering.
しかし乍ら、この４膜磁気ヘツドの場合、強磁性金属薄
膜と高硬度絶縁膜とを交互に形成するため、その都度ス
パッタリング装置のターゲラ）ｔ−交換する必要があり
、作業性が悪く量産性に適していなかつた。However, in the case of this four-film magnetic head, since ferromagnetic metal thin films and high-hardness insulating films are formed alternately, it is necessary to replace the target blade of the sputtering equipment each time, which makes workability difficult and difficult for mass production. It was not suitable for
（ハ）発明が解決しようとする問題点
本発明に上記従来例の欠点に鑑みなされｔものであり、
高周波領誠においても透磁率μが低下せず、良好な記録
再生を行うことが出来、しがも量産性に適した薄膜磁気
ヘッドを提供することを目的とするものである。(c) Problems to be Solved by the Invention The present invention has been made in view of the drawbacks of the above-mentioned conventional examples.
The object of the present invention is to provide a thin-film magnetic head that can perform good recording and reproducing without decreasing its magnetic permeability μ even under high frequency conditions, and is suitable for mass production.
に）問題点を解決するための手段
強磁性金属材料よりなる第１、第２磁性層が４課形成工
程の中断により生じた分離層によって区切られている磁
性層ｔ−基板上に形成する。B) Means for solving the problem First and second magnetic layers made of a ferromagnetic metal material are formed on a magnetic layer t-substrate separated by a separation layer caused by interruption of the fourth section formation process.
（ホ）作 用
上記構成に依れば、ｒＪｌｌｉ形成工程の被看源を交換
することなく第１、第２磁性層を分離層によって区切る
ことが可能となり、該分離ノーにより渦電流損失が押え
られる。(E) Effect According to the above configuration, it becomes possible to separate the first and second magnetic layers by the separation layer without replacing the source to be monitored in the rJlli formation process, and the separation layer suppresses eddy current loss. It will be done.
（へ）実施例
以下、図面を参照しつつ本発明の第１実施例を詳細に説
明する。(F) Example Hereinafter, a first example of the present invention will be described in detail with reference to the drawings.
第１図は第１実施例の薄膜磁気ヘッドの斜視図、第２図
はそのａ −ａ’断面図であり、第５図と同一部分には
同一符号を付し、その説明は第５図の説明を援用する。FIG. 1 is a perspective view of the thin-film magnetic head of the first embodiment, and FIG. 2 is a cross-sectional view taken along line a-a'. The same parts as in FIG. I refer to the explanation of
図中、（９）は下部磁性層、σαは上部磁性層である。In the figure, (9) is the lower magnetic layer, and σα is the upper magnetic layer.
前記下部磁性層（９）は柱状構ろ結晶構造を有するセン
ダストよりなる第１磁性層（９ａ）、第２磁性層（９ｂ
）・・・からなり、該第１、第２・・・磁性層（９ａ）
（９ｂ）・・・は夫々、別々の結晶構造をもつように界
面層（分離層）Ｉｆ回Ｄ・・・により区切られている。The lower magnetic layer (9) includes a first magnetic layer (9a) and a second magnetic layer (9b) made of sendust having a columnar crystal structure.
)..., and the first, second... magnetic layers (9a)
(9b)... are separated by interfacial layers (separation layers) If times D... so that they have separate crystal structures.
前記上部磁性層（１１も前記下部磁性層（９）と同様に
の
柱状構造、結晶構造を有するセンダストよりなる第１磁
性層（１０ａ）、第２磁性層（１０ｂ）、・・・からな
り、該第１、第２・・・磁性層（１０ａ）（１０１））
・・・は夫々別々の結晶構造をもつように界面層（分離
層）σハ２・・・罠より区切られている。The upper magnetic layer (11 also consists of a first magnetic layer (10a), a second magnetic layer (10b), etc. made of sendust having a columnar structure and crystal structure similar to the lower magnetic layer (9), The first, second... magnetic layers (10a) (101))
... are separated by an interfacial layer (separation layer) σ 2 ... trap so that each has a separate crystal structure.
前記下部磁性層（９）及び上部磁性層α１の界面層αυ
ｕＩＩ・・・１１３（１３・・・は共にＡｒ等の不活性
ガスを導入した状−でスパッタリングを中断した時に自
然に形成される。Interface layer αυ between the lower magnetic layer (9) and the upper magnetic layer α1
uII...113 (both 13...) are naturally formed when sputtering is interrupted with an inert gas such as Ar introduced.
次に、第１実施例の４膜磁気ヘツドの展進方法について
説明する。Next, a method of expanding the four-film magnetic head of the first embodiment will be explained.
先ず、所定形状に切り出されたフェライト、結晶化ガラ
ス等よりなる基板（１１ｔ−用意し、該基板（１）の上
面にスパッタリングにより、膜厚３μ震の柱状構造の結
晶構造を有するセンダストよりなる第１磁性層（９ａ）
を形成し、その後、上述のスパッタリング工程に用いら
れたＡｒ等の不活性ガスを導入したままでスパッタリン
グを中断し、約１０分間放置する。前記基板（１）は不
活性ガスにより急冷され、前記第１磁性層（９ａ）上に
界面層ＯＤが形成される。次に、前記界面層ａυ上にス
パッタリングによＶ膜厚５μｍの柱状構造の結晶構造を
有するセンダストよりなる第２磁性層（９ｋ） ）ｔ−
形成し、その後上述と同様にして約１０分間スパッタリ
ングを中断して界面層（１１１形成する。そして、この
操作を繰り返すことにより界面層によって区切られた第
３、第４・・・磁性層を被着して膜厚３０μｍの下部磁
性層１９１１に形成する。前記第１、第２・・・磁性層
（９ａ）（９ｂ）・・・の結晶構造は前記界面層ｕ１１
１１１１・・・によフ別々に区切られている。First, a substrate (11t) made of ferrite, crystallized glass, etc. cut into a predetermined shape is prepared, and a film made of sendust having a columnar crystal structure with a film thickness of 3 μm is deposited on the upper surface of the substrate (1) by sputtering. 1 magnetic layer (9a)
After that, the sputtering is interrupted while the inert gas such as Ar used in the above sputtering process is still introduced, and the sputtering is left for about 10 minutes. The substrate (1) is rapidly cooled with an inert gas, and an interfacial layer OD is formed on the first magnetic layer (9a). Next, a second magnetic layer (9k) made of sendust having a columnar crystal structure and having a V film thickness of 5 μm is formed on the interface layer aυ by sputtering.
After that, sputtering is interrupted for about 10 minutes in the same manner as described above to form an interface layer (111).Then, by repeating this operation, the third, fourth... magnetic layers separated by the interface layer are covered. The crystal structure of the first, second... magnetic layers (9a) (9b)... is similar to that of the interface layer u11.
1111... are separated separately.
次に、前記下部磁性Ｍｌ ｆ９＋上に８１０２等よりな
るギャップスペーｔ（３１’（ｒ形成し、該ギャップス
ペーサ（３）上にＯｕ等よりなる導体コイル層（４）を
形成し、該導体コイル層（４）を覆うように５ｉ０２等
の眉間絶縁層（５）を形成する。Next, a gap spacer t(31'(r) made of 8102 or the like is formed on the lower magnetic Ml f9+, and a conductor coil layer (4) made of Ou or the like is formed on the gap spacer (3). A glabellar insulating layer (5) such as 5i02 is formed to cover layer (4).
次に、前記ギャップスペーサ（３）、前記導体コイル層
（４）及び層間絶縁層（５）上に前記下部磁性ｍ（９１
の形成方法と同様にして界面層ｌｌ’ａａ’ａ・・・に
より区切られた膜厚６μｍの柱状構造の結晶構造を有す
るセンダストよりなる第１、第２・・・磁性層（１０ａ
）（１０ｂ ）・・・を被着して膜厚５０μｍの上部磁
性層ｕｎ形成する。この第１、第２・・・磁性層（１０
ａ）（１０ｂ）・・・の結晶構造は前記下部磁性層（９
）の第１、第２・・・磁性層（９ａ）（９ｂ）・・・と
同様に前記界面層Ｕハ２・・・によシ別々に区切られて
いる。Next, the lower magnetic m (91
The first, second... magnetic layers (10a
) (10b)... is deposited to form an upper magnetic layer with a thickness of 50 μm. These first, second... magnetic layers (10
The crystal structure of a) (10b)... is the lower magnetic layer (9).
), the interfacial layers U and 2 are separated separately, similar to the first and second magnetic layers (9a), (9b), and so on.
そして最後に、前記上部磁性層ａαの上面にＴ１酸Ｂａ
等のセラミック材料よりなる保護板（７）を低融点ガラ
ス（８１等により接合して、第１図及び第２図に示す第
１実施例の＃膜磁気ヘッドが完成する。Finally, T1 acid Ba is added to the upper surface of the upper magnetic layer aα.
A protective plate (7) made of a ceramic material such as the above is bonded with a low melting point glass (81 or the like) to complete the # film magnetic head of the first embodiment shown in FIGS. 1 and 2.
上述のよりな第１実施例の薄膜磁気ヘッドでは、下部磁
性／ｄ （９）及び上部磁性層α（１は夫々、界面層１
１１Ｊ（１１１・・・αｚｕ邊・・・によって区切られ
た第１、第２・・・磁性層（９ａ）（９ｂ）・・（１０
ａ）（１０ｂ）−よりなるため渦電流による磁束の表皮
効果が起こらず、透磁率μは低下しない、また、前記界
面層ｕ１１ｔｔｎ・・・ｕ７Ｊｔｔｚ・・・はスパッタ
リングの中断により簡単に形成出来るので作業性が向上
する。In the thin film magnetic head of the first embodiment described above, the lower magnetic layer /d (9) and the upper magnetic layer α (1 are respectively the interface layer 1
11J (111... αzu section... magnetic layers (9a) (9b)... (10
a) (10b)-, the skin effect of magnetic flux due to eddy current does not occur, and the magnetic permeability μ does not decrease. In addition, the interface layers u11ttn...u7Jttz... can be easily formed by interrupting sputtering. Improves work efficiency.
次に、本発明の第２実施例について詳細に説明する。Next, a second embodiment of the present invention will be described in detail.
第５図は第２実施例の４膜磁気ヘツドの要部断面図であ
シ、第２図と同一部分には同一符号を付し、その説明は
第２図の説明を援用する。FIG. 5 is a cross-sectional view of the main parts of the four-film magnetic head of the second embodiment. The same parts as in FIG. 2 are denoted by the same reference numerals, and the explanation of FIG. 2 is referred to for the explanation thereof.
図中、ａ３は下部磁性層、ａ４は上部磁性層である。In the figure, a3 is a lower magnetic layer, and a4 is an upper magnetic layer.
前記下部磁性層ａ３及び前記上部磁性層Ｉの第１、第２
磁性層（１３ａ）（１３ｂ）”（１４ａ）（１４ｂ）・
・・は夫々側々の柱状構造の結晶構造をもつようにＡＩ
！Ｎ層（分離層）α５１（１５１・・・（Ｌ（９αｅ・
・・により区切られている。尚、このＡＩ！Ｎ層α５１
（１５１・・・（ＩＧＩμｅ・・・は共にＮ２ガスを導
入した状遣でスパッタリングを中断した時に自ｍ＜形成
される。The first and second layers of the lower magnetic layer a3 and the upper magnetic layer I
Magnetic layer (13a) (13b)'' (14a) (14b)・
... is AI so that it has a crystal structure of columnar structure on each side.
! N layer (separation layer) α51(151...(L(9αe・
Separated by... Furthermore, this AI! N layer α51
(151...(IGIμe...) are both formed when sputtering is interrupted by introducing N2 gas.
次に、５＠２実施例の薄設磁気ヘッドの製造方法につい
て説明する。Next, a method of manufacturing the thin magnetic head of the 5@2 embodiment will be described.
先ず、第１ｇＡ施例と同様に基板はｊの上面にスパッタ
リングにより膜厚５μ噂の第１磁性４ （１５ａ）を形
成し、その後、上述のスパッタリングに用いられたＡｒ
等の不活性ガスに代えてＮ２ガスを導入してペルジャー
内の温度を２００”Ｃ以上に保ち乍らスパッタリングを
中断して所定時間放置する。この際、前記ＷＳ１磁性層
（１３ａ）を形成するセンダスト中に約ｓ、 ｓ ｗｔ
％含まれているＡｌは前記Ｎ２ガスと反応して前記第１
磁性＃１（１３ａ）上にＡＪＮ層Ｑ５が形成される。尚
、この時、形成されるＡＩ！Ｎ層ａ５層膜５Ｏ膜厚μｍ
になるように制御されている０次に、スパッタリングを
再開して前記ＡＩ！ＮＭＩ（１！Ｊ上に膜厚３μｍの第
２磁性層（１３ｂ）を形成する。その後、第１夾施例と
同様に上述の動作を操り返すことによりＡｌ！Ｎ層によ
って区切られた第５、第４・・・磁性層を被着して膜厚
３０μ震の下部磁性層α３１ｔ−形成する。First, as in the first gA example, a first magnetic film 4 (15a) with a thickness of 5 μm is formed on the upper surface of the substrate by sputtering, and then the Ar film used in the sputtering described above is formed.
N2 gas was introduced in place of the inert gas such as, and while the temperature inside the Pelger was maintained at 200"C or higher, sputtering was interrupted and left for a predetermined period of time. At this time, the WS1 magnetic layer (13a) was formed. About s during sendust, s wt
% of Al reacts with the N2 gas to form the first
AJN layer Q5 is formed on magnetic #1 (13a). Furthermore, at this time, the AI that is formed! N layer a5 layer film 5O film thickness μm
Then, sputtering is restarted and the AI! A second magnetic layer (13b) with a thickness of 3 μm is formed on the NMI (1!J). Thereafter, by repeating the above operation in the same manner as in the first example, the fifth magnetic layer separated by the Al!N layer is formed. , 4th...A magnetic layer is deposited to form a lower magnetic layer α31t with a thickness of 30 μm.
次に、第１実施例と同様にして前記下部磁性層０上にギ
ャップスペーサ（３）、導体コイル層（４）、層間絶縁
層（５）ｔ−形成した後、その上に前記下部磁性層（１
３と同様にしてＴＪＳｌ、第２−・・磁性Ｍ（１４ａ）
（１４ｂ）・・・がＡｌ！Ｎ層ｕｉ１９ｕｓ・・・によ
り区切られた上部磁性ノーＩを形成する。Next, a gap spacer (3), a conductor coil layer (4), and an interlayer insulating layer (5) are formed on the lower magnetic layer 0 in the same manner as in the first embodiment, and then the lower magnetic layer is formed thereon. (1
Similarly to 3, TJSl, 2nd...magnetic M (14a)
(14b)... is Al! An upper magnetic node I separated by N layers ui19us... is formed.
以後は′ｄＩｉＩＨ施例と同様にして第５図に示す第２
実施例の４膜磁気ヘツドが完成する。Thereafter, in the same manner as in the 'dIiIH example, the second process shown in FIG.
The four-film magnetic head of this example is completed.
この第２実＃１例の薄膜磁気ヘッドも、下部磁性層０及
び上部磁性層１１４１は夫々、第１、第２・・・磁性ノ
＃（１３ａ）（１３ｌ） ）＝（１４ａ）（１４ｂ）・
・・が＾ｌ！Ｎ Ｊ＊（１５１（１５・・・叫ｕか・・
に工って区切られているので第１実施例と同様に渦電流
損失は起こらない、を次、このＡＩ！Ｎ層１１５ （１
５１・・・αｅａｅ・・・は従来の如くいちいちスパッ
タリング装置のターゲットを交換せずにスパッタリング
を中断してＮ２ガスを導入するだけで簡単に形成出来作
業性が向上する。In the thin film magnetic head of this second practical #1 example, the lower magnetic layer 0 and the upper magnetic layer 1141 are the first, second...magnetic layers (13a) (13l) )=(14a)(14b), respectively.・
... is ^l! N J*(151(15...scream u...
Since the AI! N layer 115 (1
51 .
次に、外径５ｍ１．内径ＳＷＳの環状の基板上に従来例
の如く単層の磁性層を膜厚３０μ調形成した試料Ａと、
第１、第２・・・磁性層がＡＩ！Ｎ層によりて区切られ
た第２実施例の構造の磁性層を膜厚３率μの周波数特性
ｔｇぺた。その結果を第４図に示す、この図から判るよ
うに第２実施例の構造の磁性層ｔもつ試料Ｂｔｊ試料Ａ
に比べて高周波領域においても高い透磁率声が得られた
。Next, outside diameter 5m1. Sample A, in which a single magnetic layer with a thickness of 30 μm was formed as in the conventional example, on an annular substrate with an inner diameter SWS;
The first, second...magnetic layers are AI! The frequency characteristic of the magnetic layer having the structure of the second embodiment separated by N layers with a film thickness of 3 μ is tgpeta. The results are shown in FIG.
Higher magnetic permeability was obtained even in the high frequency region compared to the conventional method.
尚、第１、第２磁性層ｉｏｏ系アモルファス磁性材料で
形成しても、上記第１実施例と同様に界面層が形成され
、渦電流損失を抑えることが出来る。Incidentally, even if the first and second magnetic layers are formed of an ioo-based amorphous magnetic material, an interface layer is formed as in the first embodiment, and eddy current loss can be suppressed.
（ト） 発明の効果
本発明に依れば、高周波領域においても渦”ば流損失が
生じず、良好な記録再生を行うことが出来、しかも量産
性に適した薄膜磁気ヘッドを提供し得る。(G) Effects of the Invention According to the present invention, it is possible to provide a thin film magnetic head that can perform good recording and reproduction without causing eddy wave loss even in a high frequency range, and is suitable for mass production.
第１図乃至＠５図は本発明に係シ、第１図は第１実施例
の薄膜磁気ヘッドの斜視図、８ｇ２図は第１図のａ −
ａ’断面図、第５図は第２実施例の薄膜磁気ヘッドの要
部断面図である。第４図は透磁率の周波数％性を示す図
、第５図は従来の４膜磁気ヘツドの要部断面図である。1 to 5 relate to the present invention, FIG. 1 is a perspective view of the thin film magnetic head of the first embodiment, and FIG. 8g2 is a-a of FIG. 1.
5 is a cross-sectional view of a main part of a thin-film magnetic head of a second embodiment. FIG. 4 is a diagram showing frequency % characteristics of magnetic permeability, and FIG. 5 is a sectional view of the main part of a conventional four-film magnetic head.
Claims (1)
性層が薄膜形成工程の中断により生じた分離層によって
区切られている磁性層を形成してなる薄膜磁気ヘツド。(1) A thin film magnetic head in which a magnetic layer is formed on a substrate, in which first and second magnetic layers made of a ferromagnetic metal material are separated by a separation layer created by interruption of the thin film forming process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15197587A JPH0758531B2 (en) | 1987-06-18 | 1987-06-18 | Method of manufacturing thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15197587A JPH0758531B2 (en) | 1987-06-18 | 1987-06-18 | Method of manufacturing thin film magnetic head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63316308A true JPS63316308A (en) | 1988-12-23 |
| JPH0758531B2 JPH0758531B2 (en) | 1995-06-21 |
Family
ID=15530316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15197587A Expired - Fee Related JPH0758531B2 (en) | 1987-06-18 | 1987-06-18 | Method of manufacturing thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0758531B2 (en) |
-
1987
- 1987-06-18 JP JP15197587A patent/JPH0758531B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0758531B2 (en) | 1995-06-21 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |