JPS633147Y2 - - Google Patents
Info
- Publication number
- JPS633147Y2 JPS633147Y2 JP14006080U JP14006080U JPS633147Y2 JP S633147 Y2 JPS633147 Y2 JP S633147Y2 JP 14006080 U JP14006080 U JP 14006080U JP 14006080 U JP14006080 U JP 14006080U JP S633147 Y2 JPS633147 Y2 JP S633147Y2
- Authority
- JP
- Japan
- Prior art keywords
- noise
- thick film
- film capacitor
- absorbing element
- mainly composed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 11
- 229910052573 porcelain Inorganic materials 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 8
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 2
- 229910002113 barium titanate Inorganic materials 0.000 claims description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012074 hearing test Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
Description
【考案の詳細な説明】
本考案は、マイクロモータなどから発生する高
周波電気雑音を大幅に低減することを可能にした
ノイズ吸収素子に関する。[Detailed Description of the Invention] The present invention relates to a noise absorbing element that makes it possible to significantly reduce high frequency electrical noise generated from a micro motor or the like.
従来からマイクロモータには火花消去素子とし
てSiCバリスタ等が使われてきた。しかし、近
年、マイクロモータの音響機器への使用が多くな
るに従つて短波放送帯やFM放送帯などの高周波
帯域での雑音が問題になつてきているが、従来の
SiCバリスタ等の火花消去素子ではその静電容量
が数10pFから数100pFと小さいために高周波帯域
では十分な雑音吸収ができないという欠点があつ
た。 Traditionally, SiC varistors and the like have been used as spark-quenching elements in micromotors. However, in recent years, as micromotors have been increasingly used in audio equipment, noise in high frequency bands such as shortwave broadcast bands and FM broadcast bands has become a problem.
Spark-quenching elements such as SiC varistors have a drawback that they cannot absorb sufficient noise in high frequency bands because their capacitance is small, ranging from several tens of pF to several hundred pF.
一方、モータの雑音防止用としては、コンデン
サを使用することが知られている。例えば、特開
昭52−115310号公報や特開昭52−126707号公報に
記載された技術が知られているが、これらの技術
は、雑音防防止用コンデンサとして磁器コンデン
サを用いるものであり、SiCバリスタに比べ、高
周波帯域での雑音防止に効果を発揮するものの、
静電容量が特別に規定されていなく、高周波帯域
での雑音が発生しないレベルまで雑音を防止でき
ていなかつた。 On the other hand, it is known to use a capacitor to prevent motor noise. For example, the techniques described in JP-A-52-115310 and JP-A-52-126707 are known, but these techniques use a magnetic capacitor as a noise prevention capacitor. Although it is more effective in preventing noise in high frequency bands than SiC varistors,
The capacitance was not specifically regulated, and it was not possible to prevent noise to a level that would not generate noise in the high frequency band.
そこで、本考案は以上の点に鑑み、1MHzにお
ける容量がほぼ3000〜8000pFの厚膜コンデンサ
を用いることによつて、短波放送帯やFM放送帯
等の高周波領域での雑音吸収を十分なものとし、
またアルミナ等の電気絶縁性基板の上に厚膜コン
デンサを形成することによつて安価で高性能なノ
イズ吸収素子を提供するものである。 Therefore, in view of the above points, the present invention uses a thick film capacitor with a capacitance of approximately 3000 to 8000 pF at 1MHz to ensure sufficient noise absorption in high frequency regions such as shortwave broadcast bands and FM broadcast bands. ,
Furthermore, by forming a thick film capacitor on an electrically insulating substrate such as alumina, an inexpensive and high-performance noise absorbing element is provided.
以下、図示した実施例に基づいて、本考案を詳
細に説明する。 Hereinafter, the present invention will be explained in detail based on the illustrated embodiments.
第1図において、1はアルミナ等の電気絶縁性
の基板、2はその基板1の上に形成した銀などか
らなる下部電極、3はその上に形成した厚膜コン
デンサで誘電性磁器焼結体の粉体と結合剤のガラ
スからなる。4は銀などからなる上部電極であ
る。 In Fig. 1, 1 is an electrically insulating substrate made of alumina or the like, 2 is a lower electrode made of silver or the like formed on the substrate 1, and 3 is a thick film capacitor formed on the dielectric porcelain sintered body. Consists of powder and glass as a binder. 4 is an upper electrode made of silver or the like.
厚膜コンデンサ3は、誘電性磁器焼結体の粉体
に結合剤のガラスと有機バインダーを加え混練し
て誘電体ペーストを作成し、これをスクリーン印
刷等により下部電極2上に塗布し、焼付けてコン
デンサ膜を形成させたものである。誘電性磁器焼
結体としては、誘電率の大きいチタン酸バリウム
を主体とする磁器焼結体、およびチタン酸ストロ
ンチウムを主体とする粒界層型誘電体磁器焼結体
を選ぶと最適である。まして、まず、その誘電体
磁器磁器焼結体を粉砕して1〜3μmの平均粒径の
粉体にする。これら粉体を800〜1000℃の温度で
充分に溶融して誘電体磁器の粉体同志をよく結合
させ、同時に基板上または電極上によく固着する
ガラスのフリツトを有機バインダーと共にマーラ
ー等を使つてよく混練し、誘電体ペーストを作成
する。これらの誘電率は約2000から3000である。 The thick film capacitor 3 is made by adding and kneading binder glass and an organic binder to powder of dielectric porcelain sintered body to create a dielectric paste, which is applied onto the lower electrode 2 by screen printing, etc., and then baked. A capacitor film is formed using the same method. As the dielectric porcelain sintered body, it is best to choose a porcelain sintered body mainly composed of barium titanate, which has a high dielectric constant, and a grain boundary layer type dielectric porcelain sintered body mainly composed of strontium titanate. First, the dielectric porcelain sintered body is ground into powder having an average particle size of 1 to 3 μm. These powders are sufficiently melted at a temperature of 800 to 1000°C to bond the dielectric porcelain powders well, and at the same time, a glass frit that adheres well to the substrate or electrode is used with an organic binder using a mala or similar tool. Mix well to create a dielectric paste. Their dielectric constants are approximately 2000 to 3000.
電極2,4の材料は銀粉95対酸化ビスマス5の
重量比の粉末に有機バインダーを加えて銀ペース
トを作成する。 As the material for the electrodes 2 and 4, a silver paste is prepared by adding an organic binder to powder having a weight ratio of 95 silver powder to 5 bismuth oxide.
次に、このノイズ吸収素子の製造に際しては、
銀ペーストをまず基板1の上にスクリーン印刷法
により塗布して乾燥した後、最高温度920℃で10
分間保持するトンネルに通して空気中で焼付けて
下部電極2を形成する。 Next, when manufacturing this noise absorbing element,
Silver paste was first applied onto the substrate 1 by screen printing method, dried, and then heated at a maximum temperature of 920℃ for 10 minutes.
The lower electrode 2 is formed by baking it in air through a tunnel where it is held for a minute.
つぎに、誘電体ペーストを同じ方法で下部電極
2の上に塗布し、乾燥させた後焼付けて厚膜コン
デンサ3を形成する。つづいて、同じ銀ペースト
を誘電体の厚膜コンデンサ3の上に同じ方法で塗
布し焼付けて上部電極4を形成する。 Next, a dielectric paste is applied on the lower electrode 2 in the same manner, dried and baked to form the thick film capacitor 3. Subsequently, the same silver paste is applied onto the dielectric thick film capacitor 3 using the same method and baked to form the upper electrode 4.
以上のような構成よりなる本考案のノイズ吸収
素子を第2図のモータ部分略図に示すように直流
モータの整流子間に取付け、動作時の雑音電界強
度を測定した。図中5,6,7は整流子、8,9
はブラシ、10,11,12は回転子コイル、1
3,14,15は本考案のノイズ吸収素子、1
7,18はリード線である。測定に使つたモータ
は6V用9V用、12V用のモータの3種類である。 The noise absorbing element of the present invention having the above-mentioned configuration was attached between the commutators of a DC motor as shown in the schematic diagram of the motor section in FIG. 2, and the noise electric field intensity during operation was measured. In the figure, 5, 6, 7 are commutators, 8, 9
is a brush, 10, 11, 12 are rotor coils, 1
3, 14, 15 are noise absorbing elements of the present invention, 1
7 and 18 are lead wires. Three types of motors were used for measurements: 6V, 9V, and 12V.
第3図は測定結果の一例を示す図である。一
方、聴感試験の結果、雑音電界強度が−70dB以
下では雑音は発生しないことが判つているので、
その結果から、ノイズ吸収素子としての静電容量
は1MHzでの値が3000pFから8000pFであることが
必要であり、この範囲より高くても低くても雑音
吸収の効果が低下する。 FIG. 3 is a diagram showing an example of measurement results. On the other hand, hearing tests have shown that no noise occurs when the noise electric field strength is -70dB or less.
From the results, the capacitance as a noise absorbing element needs to have a value of 3000 pF to 8000 pF at 1 MHz, and the noise absorption effect decreases if it is higher or lower than this range.
また、誘電体ペーストを使い、印刷パターンの
形状を変えることにより、種々の形状のものが得
られる。本実施例の場合、リング状のアルミナ基
板の上に3個の厚膜コンデンサを形成している。
このように従来の方法に比べて、製造法も容易
で、しかもアルミナ基板等の電気絶縁性基板上に
形成しているため、磁器コンデンサに比べて機械
的強度が強いものとなる。 Further, by using dielectric paste and changing the shape of the printed pattern, various shapes can be obtained. In the case of this embodiment, three thick film capacitors are formed on a ring-shaped alumina substrate.
As described above, the manufacturing method is easier than that of conventional methods, and since it is formed on an electrically insulating substrate such as an alumina substrate, the capacitor has higher mechanical strength than a ceramic capacitor.
以上のように本考案によれば、電気絶縁性基板
上に厚膜コンデンサを形成して構成しており、印
刷技術により種々の形状のコンデンサを得ること
ができるため、磁器コンデンサをモータに取付け
易いように加工するのに比べ、安価に得ることが
できるとともに、機械的強度を向上させることが
できる。 As described above, according to the present invention, a thick film capacitor is formed on an electrically insulating substrate, and capacitors of various shapes can be obtained using printing technology, making it easy to attach a ceramic capacitor to a motor. Compared to conventional processing, it can be obtained at a lower cost and its mechanical strength can be improved.
しかも、厚膜コンデンサとして、1MHzにおけ
る静電容量がほぼ3000pFから8000pFのものを用
いているため、短波放送帯やFM放送帯等の高周
波領域での雑音吸収を雑音が発生しないレベルま
で十分に行なうことできる。そして、このような
ノイズ吸収素子は音響機器におけるマイクロモー
タへの通用や、今後マイコン応用機器に対するノ
イズ防止用等の多方面にわたつて使用に供するこ
とができるものであり、その産業的価値は極めて
大きいものである。 Moreover, since the thick film capacitor used has a capacitance of approximately 3000pF to 8000pF at 1MHz, it absorbs noise sufficiently in high frequency regions such as shortwave broadcast bands and FM broadcast bands to a level where no noise is generated. I can do that. Such noise absorbing elements can be used in a wide variety of fields, such as in micromotors in audio equipment and as noise prevention in microcomputer-applied equipment in the future, and their industrial value is extremely high. It's big.
第1図は本考案のノイズ吸収素子の構成を示す
断面図、第2図は本考案のノイズ吸収素子の適用
例を示す回路図、第3図はその静電容量と雑音電
界強度の関係を示す特性図である。
1……電気的絶縁性の基板、2……下部電極、
3……厚膜コンデンサ、4……上部電極。
Figure 1 is a cross-sectional view showing the configuration of the noise absorbing element of the present invention, Figure 2 is a circuit diagram showing an application example of the noise absorbing element of the present invention, and Figure 3 shows the relationship between its capacitance and noise electric field strength. FIG. 1... Electrically insulating substrate, 2... Lower electrode,
3... Thick film capacitor, 4... Upper electrode.
Claims (1)
量がほぼ3000pFから8000pFの厚膜コンデンサ
を形成して構成したことを特徴とするノイズ吸
収素子。 (2) 厚膜コンデンサがチタン酸バリウムを主体と
する誘電体磁器粉末を主成分としたものである
ことを特徴とする実用新案登録請求の範囲第1
項記載のノイズ吸収素子。 (3) 厚膜コンデンサがチタン酸ストロンチウムを
主体とする粒界層型誘電体磁器粉末を主成分と
したものであることを特徴とする実用新案登録
請求の範囲第1項記載のノイズ吸収素子。[Claims for Utility Model Registration] (1) A noise absorbing element characterized in that it is constructed by forming a thick film capacitor with a capacitance of approximately 3000 pF to 8000 pF at 1 MHz on an electrically insulating substrate. (2) Claim No. 1 for Utility Model Registration characterized in that the thick film capacitor is mainly composed of dielectric porcelain powder mainly composed of barium titanate.
Noise absorbing element described in section. (3) The noise absorbing element according to claim 1, wherein the thick film capacitor is mainly composed of grain boundary layer type dielectric ceramic powder mainly composed of strontium titanate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14006080U JPS633147Y2 (en) | 1980-09-30 | 1980-09-30 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14006080U JPS633147Y2 (en) | 1980-09-30 | 1980-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5764132U JPS5764132U (en) | 1982-04-16 |
JPS633147Y2 true JPS633147Y2 (en) | 1988-01-26 |
Family
ID=29499983
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14006080U Expired JPS633147Y2 (en) | 1980-09-30 | 1980-09-30 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS633147Y2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6169507B2 (en) * | 2013-02-26 | 2017-07-26 | マブチモーター株式会社 | DC motor |
-
1980
- 1980-09-30 JP JP14006080U patent/JPS633147Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5764132U (en) | 1982-04-16 |
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