JPS63311124A - Pyroelectric type infrared-ray array sensor - Google Patents
Pyroelectric type infrared-ray array sensorInfo
- Publication number
- JPS63311124A JPS63311124A JP62148550A JP14855087A JPS63311124A JP S63311124 A JPS63311124 A JP S63311124A JP 62148550 A JP62148550 A JP 62148550A JP 14855087 A JP14855087 A JP 14855087A JP S63311124 A JPS63311124 A JP S63311124A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- pyroelectric
- group
- substrate
- array sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229920001721 polyimide Polymers 0.000 claims abstract description 3
- 239000009719 polyimide resin Substances 0.000 claims abstract description 3
- 239000000126 substance Substances 0.000 claims 2
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 239000010408 film Substances 0.000 abstract description 7
- 230000008646 thermal stress Effects 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 230000007423 decrease Effects 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000010287 polarization Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 229910052573 porcelain Inorganic materials 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- 229910003781 PbTiO3 Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は焦電薄膜を用いた焦電型赤外線アレイセンサに
関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a pyroelectric infrared array sensor using a pyroelectric thin film.
従来の技術
焦電型赤外線検出器は熱量の赤外線検出器で、常温動作
が可能で、感度の波長依存性が小さく、熱室検出器のな
かでは高感度である。Conventional technology A pyroelectric infrared detector is a calorific infrared detector that can operate at room temperature, has low sensitivity dependence on wavelength, and has high sensitivity among heat chamber detectors.
焦電型検出器に使用されている材料にはＴＧＳ系・Ｌｉ
ＴａＯ３系等の単結晶、Ｐ ｂ Ｔ ｉ Ｏ９系・ｐｂ
ＸＺｒｌ−ｘＴｉＯ２系のセラミック、ＰＶＦ２系等等
の有機膜等がある。Materials used in pyroelectric detectors include TGS and Li.
Single crystal such as TaO3 type, P b Ti O9 type/pb
Examples include organic films such as XZrl-xTiO2-based ceramics and PVF2-based ceramics.
Ｐ ｂ Ｔ ｉ Ｏｓは焦電材料の性能指数であるＦｖ
（−７／６ＣＶ）及びＦｍ（−ｙ／ＣｖＪεｄ ｔａｎ
δ）が高い。P b T i Os is the figure of merit of pyroelectric material Fv
(-7/6CV) and Fm(-y/CvJεd tan
δ) is high.
ここで γは焦電係数、εは誘電率、ｃｖは体積比熱、
ｄは厚さである。また、ＰｂＴｉＯｓは焦電係数の温度
変化が小さく、キュリ一点が十分高い等の特長をもって
いる。焦電型検出器には、ＰｂＴｉＯ３磁器が用いられ
る場合が多い。磁器は多結晶であり、結晶軸の配列に方
向性は無（、シたがって自発分極Ｐｓもランダムに配列
している。焦電材料は自発分極Ｐｓの変化を出力として
取り出すため、Ｐｓが一方向に揃っているとき、最大出
力が得られる。そこで、磁器には高電界を印加してＰｓ
の向きを揃える分極処理が必要である。Here, γ is the pyroelectric coefficient, ε is the dielectric constant, cv is the volumetric specific heat,
d is the thickness. Furthermore, PbTiOs has features such as a small change in pyroelectric coefficient with temperature and a sufficiently high Curie point. PbTiO3 porcelain is often used for pyroelectric detectors. Porcelain is polycrystalline, and there is no directionality in the arrangement of crystal axes (therefore, spontaneous polarization Ps is also arranged randomly. Pyroelectric materials extract changes in spontaneous polarization Ps as output, so Ps is uniform Maximum output is obtained when the directions are aligned.Therefore, a high electric field is applied to the porcelain to generate Ps
Polarization processing is required to align the directions of the two.
また、Ｃ軸配向したＰ ｂ Ｔ ｉ Ｏｓ薄膜の配向軸
方向に発生する焦電気を利用した場合、Ｃ軸方向の誘電
率が低下し、焦電係数が増大するので、ＰｂＴｉｅｓ磁
器の約３倍のＦｖを示す高感度焦電材料を実現できるこ
とが、第３０回応用物理学関係連合講演予稿集７Ｐ−ｚ
−２に報告されている。Furthermore, when using pyroelectricity generated in the direction of the orientation axis of a C-axis oriented PbTiOs thin film, the dielectric constant in the C-axis direction decreases and the pyroelectric coefficient increases, so it is approximately three times as strong as PbTies porcelain. Proceedings of the 30th Applied Physics Association Lecture 7P-z show that it is possible to realize a highly sensitive pyroelectric material with an Fv of
-2 reported.
赤外線アレイセンサは光学系との関係で空間分解能をよ
くするために微細な配列にすることが望ましい。In order to improve spatial resolution in relation to the optical system, it is desirable that the infrared array sensor be arranged in a fine array.
発明が解決しようとする問題点
焦電材料の厚さが薄くなるほど、雑音が小さくなり、検
出能：０本は増大する。Ｐ ｂ Ｔ ｉ Ｏｓ磁器でア
レイを構成する場合、磁器の薄膜化には限界があり、厚
さを薄くして０本を向上することは限度がある。また、
各エレメント間のクロストークが大きくなり空間分解能
が低下する。そのため各エレメントを分離するこきが必
要となる。面積を小さくすると電気容量が小さくなるた
め、外部からの静電容量、浮遊容量の点から小形化も困
難となる。Problems to be Solved by the Invention As the thickness of the pyroelectric material becomes thinner, the noise becomes smaller and the detectability: 0 increases. When configuring an array using P b T i Os porcelain, there is a limit to how thin the porcelain film can be, and there is a limit to how thin the porcelain film can be to improve zero. Also,
Crosstalk between each element increases and spatial resolution decreases. Therefore, it is necessary to separate each element. As the area becomes smaller, the capacitance becomes smaller, so miniaturization becomes difficult in terms of external capacitance and stray capacitance.
さらに、焦電材料に分極処理を施すとき次のような問題
点が生じる。Furthermore, the following problems arise when polarization treatment is applied to pyroelectric materials.
（１）分極処理により絶縁破壊が生じる場合がある。(1) Dielectric breakdown may occur due to polarization treatment.
（２）高密度に配列している高分解能アレイ素子では、
それらを均一に分極することが困難である。(2) In high-resolution array elements arranged in high density,
It is difficult to polarize them uniformly.
（３）半導体デバイス上に焦電薄膜を形成した集積化デ
バイスでは、分極処理そのものが不可能な場合がある。(3) In an integrated device in which a pyroelectric thin film is formed on a semiconductor device, polarization itself may not be possible in some cases.
一方、焦電薄膜はスパッタリングなどにより高温で作製
されるため、基板との熱膨張の違いによる熱応力が生じ
る。感度を向上するため焦電薄膜と接した基板の一部を
除去する構造では、この熱応力により焦電薄膜の割れが
生じた。またこれらの焦電薄膜は圧電体であるので、振
動や音による雑音も生じた。On the other hand, since pyroelectric thin films are manufactured at high temperatures by sputtering or the like, thermal stress occurs due to the difference in thermal expansion with the substrate. In a structure in which a part of the substrate in contact with the pyroelectric thin film was removed to improve sensitivity, this thermal stress caused the pyroelectric thin film to crack. Furthermore, since these pyroelectric thin films are piezoelectric, they also generate noise due to vibrations and sounds.
問題点を解決するための手段
基板と、前記基板上に形成された絶縁薄膜と、前記絶縁
薄膜上に作製した下部電極薄膜と、その上に作製された
焦電薄膜群と、前記焦電薄膜群上に形成された複数の分
離した上部電極薄膜群と、前記焦電薄膜群の少なくとも
片面を被覆する有機薄膜とを有し、感光部に相当する基
板の一部を除去した構成とする。Means for Solving the Problems A substrate, an insulating thin film formed on the substrate, a lower electrode thin film formed on the insulating thin film, a group of pyroelectric thin films formed thereon, and the pyroelectric thin film. The structure includes a plurality of separate upper electrode thin film groups formed on the group, and an organic thin film covering at least one side of the pyroelectric thin film group, and a part of the substrate corresponding to the photosensitive part is removed.
作用
上記のような焦電薄膜及び構成を用いた赤外線アレイセ
ンサにおいては、熱拡散によるクロストークを低減しか
つ感度の向上を図ることができるばかりでな（、熱応力
による薄膜のはがれ・割れを防止できる。また有機薄膜
を用いることによりセンサ部の機械的Ｑを低減でき、振
動・音による雑音を抑制することができる。Function: In an infrared array sensor using the pyroelectric thin film and structure described above, it is possible to not only reduce crosstalk caused by thermal diffusion and improve sensitivity (but also to prevent peeling and cracking of the thin film due to thermal stress). Furthermore, by using an organic thin film, the mechanical Q of the sensor section can be reduced, and noise caused by vibrations and sounds can be suppressed.
実施例
第１図は本発明の焦電型赤外線アレイ素子の構造を示す
図である。Embodiment FIG. 1 is a diagram showing the structure of a pyroelectric infrared array element of the present invention.
（１００）でへき開し鏡面研摩したＭｇＯ単結晶基板１
上に、高周波マグネトロンスパッタ法で絶縁薄膜２とし
て５ｉｎ２を３０ＯＡ作製した。その上に下部電極３と
してＰｔ薄膜を形成した。(100) cleaved and mirror polished MgO single crystal substrate 1
On top of this, a 5 in 2 film of 30 OA was formed as an insulating thin film 2 by high frequency magnetron sputtering. A Pt thin film was formed thereon as the lower electrode 3.
ついで焦電薄膜群４として、
Ｐｂ＋−ｘ Ｌａ Ｔｉ−ｏ７ｓｘ ：ｆｌ
（ＰＬＴ）を高周波マグネトロンスパッタ法で４μｍ成
長させた。上記焦電薄膜４は各エレメントご七にメタル
マスクにより分離されている。雰囲気ガスにはＡｒと０
２の混合ガスを用い、スパッタリングターゲットは、
（（１−Ｙ） Ｐｂ＋−ｘ Ｌａｘ Ｔｉｔ−ｏ、７ｓ
ｘ Ｏ３＋Ｙ Ｐｂ０）の粉末である。表１にスパッタ
リング条件を示す。Next, as the pyroelectric thin film group 4, Pb+-x La Ti-o7sx :fl
(PLT) was grown to 4 μm by high frequency magnetron sputtering. The pyroelectric thin film 4 is separated into each element by a metal mask. Atmosphere gas contains Ar and 0
The sputtering target was ((1-Y) Pb+-x Lax Tit-o, 7s
xO3+YPb0) powder. Table 1 shows the sputtering conditions.
次に、この焦電薄膜群４上に、ＮｉＣｒよりなる複数の
上部電極薄膜５゛を、蒸着により作製した。Next, on this pyroelectric thin film group 4, a plurality of upper electrode thin films 5' made of NiCr were formed by vapor deposition.
前記上部電極薄膜５は、フォトグラフィの手法によりア
レイのピッチに合わせて格子状に分離、配列されている
。次にこれらの上に有機薄膜６を設けた。上記有機薄膜
６は感光性ポリイミド系樹脂をスピンナーで塗布し、紫
外線に照射した後２００℃で熱処理したものである。膜
厚は３．５μ■であった。電極薄膜５上の一部にはコン
タクトホール７を設けて取り出し電極８と接触させた。The upper electrode thin film 5 is separated and arranged in a grid pattern according to the pitch of the array using a photography method. Next, an organic thin film 6 was provided on these. The organic thin film 6 is made by applying a photosensitive polyimide resin using a spinner, irradiating it with ultraviolet light, and then heat-treating it at 200°C. The film thickness was 3.5 μm. A contact hole 7 was provided in a part of the electrode thin film 5 to bring it into contact with an extraction electrode 8.
表 １
さらに、焦電薄膜群４の下部におけるＭｇＯ基板１を熱
濃燐酸によりエツチングし、開口部９を設けた。このと
きエツチング幅を焦電薄膜群４の幅より大きくして、焦
電薄膜群４はＭｇＯ基板１に接触しないようにしている
。上記構成において、焦電薄膜群４とＭｇＯ基板１との
熱膨張の違いによる熱応力を有機薄膜６は緩和している
。前記絶縁薄膜２はエツチング時の保護膜として効果が
大きい。Table 1 Furthermore, the MgO substrate 1 below the pyroelectric thin film group 4 was etched with hot concentrated phosphoric acid to form an opening 9. At this time, the etching width is made larger than the width of the pyroelectric thin film group 4 so that the pyroelectric thin film group 4 does not contact the MgO substrate 1. In the above configuration, the organic thin film 6 relieves thermal stress due to the difference in thermal expansion between the pyroelectric thin film group 4 and the MgO substrate 1. The insulating thin film 2 is highly effective as a protective film during etching.
ＰＬＴ焦電薄膜が分極軸の７５ｚ以上が一方向に配向し
ているとき、焦電係数：γは５ｘｌＯ−８Ｃ／ｃｆＫと
なり、この値は２００℃で１ｏｏｋＶ／ｃ＋ａ印加して
分極処理を行ったＰｂＴｉＯｓセラミクス（ｒ−１，８
ｘｌＯ−８Ｃ／ｃＪＫ）とくらべかなり大きい。配向率
９ｏｚの場合焦電係数は６．８ＸｌＯ−８Ｃ／ ｃＪＫ
である。また、分極処理後の値と比べ殆ど変わらないば
かりでな（、配向率が小さい場合の分極後の値より大き
い。誘電率は、配向率９０名の場合、セラミクスとほぼ
同等の値で約２００である。When the PLT pyroelectric thin film is oriented in one direction over 75z of the polarization axis, the pyroelectric coefficient: γ is 5xlO-8C/cfK, and this value was determined by applying 1ookV/c+a at 200°C to perform polarization treatment. PbTiOs ceramics (r-1,8
xlO-8C/cJK). When the orientation rate is 9oz, the pyroelectric coefficient is 6.8XlO-8C/cJK
It is. In addition, it is almost the same as the value after polarization treatment (it is larger than the value after polarization when the orientation rate is small. When the orientation rate is 90, the dielectric constant is about 200, which is almost the same as that of ceramics. It is.
このように本実施例に用いたＰＬＴ薄膜では、薄膜作製
時に十分にＣ軸に配向しておれば分極処理を行わな（で
も自発分極が揃っており、特に配向率７５％以上の薄膜
でその効果が大きいことが明らかになった。また、焦電
材料としての性能指数であるＦｖ（＝γ／εＣｖ）の値
も太き（なる。２００℃で１０分間１００ｋＶ／ｃｍ印
加して分極処理を行ったｐｂＴ ｉ Ｏｓセラミクスの
値と比較して、ＰＬＴ薄膜は３倍強の値を示した。In this way, the PLT thin film used in this example does not need to be polarized if it is sufficiently oriented along the C-axis during thin film fabrication (but the spontaneous polarization is uniform, especially for thin films with an orientation rate of 75% or more). It became clear that the effect was large. In addition, the value of Fv (= γ / εCv), which is the figure of merit for pyroelectric materials, was also large. Compared to the value of pbT i Os ceramics, the PLT thin film showed a value more than three times higher.
なお、絶縁薄膜の膜厚が薄いとき、ＰＬ■薄膜の配向率
はほとんど低下しなかった。Note that when the thickness of the insulating thin film was small, the orientation rate of the PL* thin film hardly decreased.
焦電型赤外線アレイセンサとしての特性も、材料性能指
数のアップ及び各エレメント間の熱拡散を小さくした構
成により大幅に向上した。焦電薄膜が各エレメントで分
離されていなくてその両端で基板に接触しているセンサ
と比較して、感度及び０本は５倍以上増大した。また、
クロストークは第２図に示すように一桁低減された。The characteristics as a pyroelectric infrared array sensor have also been significantly improved due to an increase in the material performance index and a configuration that reduces heat diffusion between each element. Compared to a sensor in which the pyroelectric thin film is not separated in each element and is in contact with the substrate at both ends, the sensitivity and zero lines are increased by more than five times. Also,
Crosstalk was reduced by an order of magnitude as shown in FIG.
さらに、振動・音波によるセンサの出力電圧も著しく低
下した。Furthermore, the output voltage of the sensor due to vibrations and sound waves also decreased significantly.
以上述べたように、本発明による焦電型赤外線アレイセ
ンサは、ＭｇＯ基板への熱拡散を抑制して高感度・低ク
ロストークを実現することができる。As described above, the pyroelectric infrared array sensor according to the present invention can suppress heat diffusion to the MgO substrate and achieve high sensitivity and low crosstalk.
発明の効果
本発明による焦電型赤外線アレイセンサは、熱拡散によ
るクロストークを低減し、かつ感度の向上を図ることが
できるばかりでな（、焦電薄膜の熱応力による薄膜のは
がれ・割れを防止できる。Effects of the Invention The pyroelectric infrared array sensor according to the present invention can not only reduce crosstalk caused by thermal diffusion and improve sensitivity (but also prevent peeling and cracking of the pyroelectric thin film due to thermal stress). It can be prevented.
また有機薄膜を用いる構成により、センサ部の棲械的Ｑ
を低減でき、振動・音による雑音を抑制することができ
る。In addition, the structure using an organic thin film reduces the mechanical Q of the sensor part.
It is possible to reduce noise caused by vibration and sound.
線アレイセンサの構造を示す平面図及び断面図、第２図
は本発明の一実施例に於ける焦電型赤外線アレイセンサ
のクロストーク特性を示すグラフである。FIG. 2 is a plan view and a cross-sectional view showing the structure of a line array sensor, and a graph showing crosstalk characteristics of a pyroelectric infrared array sensor in an embodiment of the present invention.
１・・・・ＭｇＯ基板 ２・・・・絶縁薄膜３・・
・・下部電極薄膜 ４・・・・焦電薄膜５・・・・上
部電極薄膜 ６・・・・有機薄膜８・・・・取り出し
電極 ９・・・・開口部代理人の氏名 弁理士 中尾
敏男 ほか１名第１図
（Ａ）1...MgO substrate 2...Insulating thin film 3...
... Lower electrode thin film 4 ... Pyroelectric thin film 5 ... Upper electrode thin film 6 ... Organic thin film 8 ... Extraction electrode 9 ... Name of opening agent Patent attorney Toshio Nakao 1 other person Figure 1 (A)
Claims (5)
記絶縁薄膜上に作製した下部電極薄膜と、その上に作製
された焦電薄膜群と、前記焦電薄膜群上に形成された複
数の分離した上部電極薄膜群と、前記焦電薄膜群の少な
くとも片面を被覆する有機薄膜とを有し、感光部に相当
する基板の一部を除去したことを特徴とする焦電型赤外
線アレイセンサ。(1) A substrate, an insulating thin film formed on the substrate, a lower electrode thin film fabricated on the insulating thin film, a pyroelectric thin film group fabricated thereon, and a pyroelectric thin film group formed on the pyroelectric thin film group. pyroelectric infrared rays, comprising a plurality of separate upper electrode thin film groups, and an organic thin film covering at least one side of the pyroelectric thin film group, and a part of the substrate corresponding to the photosensitive part is removed. array sensor.
ｚＺｒ＿ｗ）Ｏ＿３で表され、 ａ）０．７≦ｘ≦１、０．９≦ｘ＋ｙ≦１、０．９５≦
ｚ≦１、ｗ＝０ｂ）ｘ＝１、ｙ＝０、０．４５≦ｚ≦１
、ｚ＋ｗ＝１ｃ）０．８３≦ｘ≦１、ｘ＋ｙ＝１、０．
５≦ｚ≦１、０．９６≦ｚ＋ｗ≦１ のいずれかの組成をもち、＜００１＞方向に高度に配向
していることを特徴とする特許請求の範囲第１項記載の
焦電型赤外線アレイセンサ。(2) The pyroelectric thin film has the chemical formula (Pb_xLa_y)(Ti_
zZr_w) O_3, a) 0.7≦x≦1, 0.9≦x+y≦1, 0.95≦
z≦1, w=0b) x=1, y=0, 0.45≦z≦1
, z+w=1c) 0.83≦x≦1, x+y=1, 0.
The pyroelectric infrared ray according to claim 1, which has a composition of either 5≦z≦1, 0.96≦z+w≦1 and is highly oriented in the <001> direction. array sensor.
ｚＺｒ＿ｗ）Ｏ＿３で表され、 ａ）ｘ＝１、ｙ＝０、０．１≦ｚ≦０．４、ｚ＋ｗ＝１
ｂ）０．９２≦ｘ≦１、ｘ＋ｙ＝１、０．３≦ｚ≦０．
４５、０．９８≦ｚ＋ｗ≦１ のいずれかの組成をもち、＜１１１＞方向に配向してい
ることを特徴とする特許請求の範囲第１項記載の焦電型
赤外線アレイセンサ。(3) The pyroelectric thin film has the chemical formula (Pb_xLa_y)(Ti_
zZr_w) O_3, a) x=1, y=0, 0.1≦z≦0.4, z+w=1
b) 0.92≦x≦1, x+y=1, 0.3≦z≦0.
45, 0.98≦z+w≦1, and is oriented in the <111> direction. The pyroelectric infrared array sensor according to claim 1.
薄膜を介して基板に支持されていることを特徴とする特
許請求の範囲第１項記載の焦電型赤外線アレイセンサ。(4) The pyroelectric infrared array sensor according to claim 1, wherein the pyroelectric thin film does not come into direct contact with the substrate, but is supported by the substrate via an organic thin film and an insulating thin film.
する特許請求の範囲第１項記載の焦電型赤外線アレイセ
ンサ。(5) The pyroelectric infrared array sensor according to claim 1, wherein the organic thin film is made of polyimide resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62148550A JP2553559B2 (en) | 1987-06-15 | 1987-06-15 | Pyroelectric infrared array sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62148550A JP2553559B2 (en) | 1987-06-15 | 1987-06-15 | Pyroelectric infrared array sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63311124A true JPS63311124A (en) | 1988-12-19 |
| JP2553559B2 JP2553559B2 (en) | 1996-11-13 |
Family
ID=15455267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62148550A Expired - Fee Related JP2553559B2 (en) | 1987-06-15 | 1987-06-15 | Pyroelectric infrared array sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2553559B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5286975A (en) * | 1991-05-29 | 1994-02-15 | Matsushita Electric Industrial Co., Ltd. | Pyro-electric type infrared-ray sensor |
| JPH06258137A (en) * | 1993-03-04 | 1994-09-16 | Matsushita Electric Ind Co Ltd | Pyroelectric infrared ray sensor |
| US5804823A (en) * | 1995-10-10 | 1998-09-08 | Raytheon Company | Bismuth layered structure pyroelectric detectors |
-
1987
- 1987-06-15 JP JP62148550A patent/JP2553559B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5286975A (en) * | 1991-05-29 | 1994-02-15 | Matsushita Electric Industrial Co., Ltd. | Pyro-electric type infrared-ray sensor |
| JPH06258137A (en) * | 1993-03-04 | 1994-09-16 | Matsushita Electric Ind Co Ltd | Pyroelectric infrared ray sensor |
| US5804823A (en) * | 1995-10-10 | 1998-09-08 | Raytheon Company | Bismuth layered structure pyroelectric detectors |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2553559B2 (en) | 1996-11-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5644838A (en) | Method of fabricating a focal plane array for hybrid thermal imaging system | |
| US5602043A (en) | Monolithic thermal detector with pyroelectric film and method | |
| JPS61177900A (en) | Piezo-electric element and its manufacture | |
| JPS62205266A (en) | Ferroelectric thin film element and its production | |
| JP7054926B2 (en) | Transparent piezoelectric device and method for manufacturing the device | |
| JPS63311124A (en) | Pyroelectric type infrared-ray array sensor | |
| Chen et al. | Sol-gel derived ferroelectric PZT thin films on doped silicon substrates | |
| JPS63313023A (en) | Pyroelectric type infrared array sensor and its production | |
| JPH0334580A (en) | Electronic parts | |
| JPS63129677A (en) | Pyroelectric infrared-ray array device and manufacture thereof | |
| JP2553569B2 (en) | Pyroelectric infrared array sensor | |
| JPH06281503A (en) | Pyroelectric infrared sensor and its production method | |
| JPS63124924A (en) | Pyroelectric type infrared array element | |
| JPH10200369A (en) | Piezoelectric thin film resonator | |
| JPS63124923A (en) | Pyroelectric type infrared array element | |
| JPS59114853A (en) | Laminated integrated circuit element | |
| JPH01272931A (en) | Pyroelectric compound thin film element | |
| JP3395796B2 (en) | Pyroelectric substrate heating method and heating device | |
| JPH06350050A (en) | Method for forming dielectric insulating film film in charge storage part of semiconductor | |
| JPH04350978A (en) | Pyroelectric infrared array sensor | |
| JPS62162930A (en) | Pyroelectric type infrared detecting element | |
| US6485619B2 (en) | Method for forming metal oxide film | |
| JPS6230695A (en) | Dielectric thin film element and production thereof | |
| JPS6246218A (en) | Pyroelectric infrared array element | |
| JPH0621064A (en) | Manufacture of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |