JPS63124923A - Pyroelectric type infrared array element - Google Patents
Pyroelectric type infrared array elementInfo
- Publication number
- JPS63124923A JPS63124923A JP61272488A JP27248886A JPS63124923A JP S63124923 A JPS63124923 A JP S63124923A JP 61272488 A JP61272488 A JP 61272488A JP 27248886 A JP27248886 A JP 27248886A JP S63124923 A JPS63124923 A JP S63124923A
- Authority
- JP
- Japan
- Prior art keywords
- pyroelectric
- thin
- film
- thin film
- array element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims abstract description 45
- 239000010408 film Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 3
- 239000000203 mixture Substances 0.000 claims description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 230000010287 polarization Effects 0.000 abstract description 15
- 230000007423 decrease Effects 0.000 abstract description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001120 nichrome Inorganic materials 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 229910003781 PbTiO3 Inorganic materials 0.000 description 4
- 229910052573 porcelain Inorganic materials 0.000 description 4
- 230000002269 spontaneous effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 210000000496 pancreas Anatomy 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は焦電薄膜を用いた焦電型赤外線アレイ素子に関
するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a pyroelectric infrared array element using a pyroelectric thin film.
従来の技術
焦電型赤外線検出器は熱室の赤外線検出器で、常温動作
が可能で、感度の波長依存性が小さく、熱型検出器のな
かでは高感度である。Pyroelectric infrared detectors are thermal chamber infrared detectors that can operate at room temperature, have low sensitivity dependence on wavelength, and are highly sensitive among thermal detectors.
焦電型検出器に使用されている材料にはＴＧＳ系・Ｌｉ
Ｔａ０ａ系等の単結晶、ＰｂＴｉＯ３系・ＰｂｘＺｒＩ
−ｘＴｉＯ３系のセラミック、ＰｖＦｚ系等の有機膜等
がある。Materials used in pyroelectric detectors include TGS and Li.
Single crystal such as Ta0a type, PbTiO3 type/PbxZrI
-xTiO3-based ceramics, PvFz-based organic films, and the like.
Ｐ ｂ Ｔ ｉ Ｏ３は焦電材料の性能指数であるＦν
（−７／６ＣＶ）及びＦ ｗ＋（−７／ＣｖＦＴゴＴｉ
了）が高い。P b T i O3 is the figure of merit of pyroelectric material Fν
(-7/6CV) and F w+ (-7/CvFTgoTi
completion) is high.
ここで γは焦電係数、εは誘電率、Ｃｖは体債比熱、
ｄは厚さである。また、ＰｂＴｉＯ３は焦電係数の温度
変化が小さく、キュリー点が十分高い等の特長をもって
いる。焦電型検出器にはＰ ｂ Ｔ ｉ Ｏ３磁器が用
いられる場合が多い。磁器は多結晶であり、桔晶軸の配
列に方向性は無＜、シたがって自発分極Ｐｓもランダム
に配列している。焦電材料は自発分極Ｐｓの変化を出力
として取り出すため、Ｐｓが一方向に揃っているとき、
最大出力が得られる。そこで、磁器には高電界を印加し
てＰｓの向きを揃える分極処理が必要である。Here, γ is the pyroelectric coefficient, ε is the permittivity, Cv is the specific heat of the body,
d is the thickness. Furthermore, PbTiO3 has features such as a small temperature change in its pyroelectric coefficient and a sufficiently high Curie point. Pb Ti O3 porcelain is often used for pyroelectric detectors. Porcelain is polycrystalline, and there is no directionality in the arrangement of the crystal axes, so the spontaneous polarization Ps is also arranged randomly. Pyroelectric materials extract changes in spontaneous polarization Ps as output, so when Ps is aligned in one direction,
Maximum output is obtained. Therefore, it is necessary to polarize the ceramic by applying a high electric field to align the directions of Ps.
また、Ｃ軸配向したＰｂＴｉＯ３薄膜の配向軸方向に発
生する焦電気を利用した場合、Ｃ軸方向の誘電率が低下
し、焦電係数が増大するので、ＰｂＴｉｅｓ磁器の約３
倍のＦｖを示す高感度焦電材料を実現できることが、第
３０回応用物理学関係連合講演予稿集７Ｐ−ｚ−２に報
告されている。Furthermore, when using pyroelectricity generated in the direction of the orientation axis of a C-axis oriented PbTiO3 thin film, the dielectric constant in the C-axis direction decreases and the pyroelectric coefficient increases.
It is reported in Proceedings of the 30th Applied Physics Association Lecture Proceedings 7P-z-2 that it is possible to realize a highly sensitive pyroelectric material exhibiting twice the Fv.
発明が解決しようとする問題点
焦電材料の厚さが薄（なるほど、雑音が小さくなり、検
出能：０本は増大する。Ｐ ｂ Ｔ ｉ Ｏ３磁器でア
レイを構成する場合、磁器の薄膜化には限界があり、厚
さを薄（して０本を向上することは限度がある。また、
各エレメント間のクロストークが太き（なり空間分解能
が低下する。そのため各エレメントを分離することが必
要となる。面積を小さくすると電気容量が小さくなるた
め、外部からの静電容量、浮遊容量の点から小形化も困
難となる。Problems to be Solved by the Invention The thickness of the pyroelectric material is thin (I see, the noise is reduced, and the detection ability: 0 lines is increased. When configuring an array with P b T i O3 porcelain, it is necessary to make the porcelain thinner. There is a limit to the thickness, and there is a limit to improving the thickness by thinning (0).
Crosstalk between each element increases (and spatial resolution decreases. Therefore, it is necessary to separate each element. If the area is reduced, the capacitance decreases, so external capacitance and stray capacitance This also makes it difficult to downsize.
さらに、焦電材料に分極処理を施すとき次のような問題
点が生じる。Furthermore, the following problems arise when polarization treatment is applied to pyroelectric materials.
（１）分極処理により絶縁破壊が生じる場合がある。(1) Dielectric breakdown may occur due to polarization treatment.
（２）高密度に配列している高分解能アレイ素子では、
それらを均一に分極することが困難である。(2) In high-resolution array elements arranged in high density,
It is difficult to polarize them uniformly.
（３）半導体デバイス上に焦電薄膜を形成した集積化デ
バイスでは、分極処理そのものが不可能な場合がある。(3) In an integrated device in which a pyroelectric thin film is formed on a semiconductor device, polarization itself may not be possible in some cases.
問題点を解決するための手段
化学式がＰｂ＋−ｘ Ｌａｘ Ｔｉｔ−ｏ、７ｓｘ ０
３で組成範囲がＯ＜Ｘ＜０．１５であり、分極軸の７５
零以上が一方向に配向している焦電薄膜と、膜方向の熱
伝導が焦電薄膜による熱伝導より小さくなるように薄膜
化された電極を用いる。Means to solve the problem The chemical formula is Pb+-x Lax Tit-o, 7sx 0
3, the composition range is O<X<0.15, and the polarization axis is 75
A pyroelectric thin film in which zero or more molecules are oriented in one direction, and an electrode made thin so that heat conduction in the film direction is smaller than heat conduction through the pyroelectric thin film are used.
作用
上記のような焦電薄膜を用いた赤外線ア１．・イア；子
においては、各エレメントを分離しな（でもクロストー
クが小さいため工程数を低減できる。またＰｓが既に揃
った自然分極を有する焦電薄膜を用いることにより、分
極処理をおこなう必要が無く、歩留まり良く、高性能の
焦電型赤外線アレイ素子が実現できる。Function: Infrared rays using a pyroelectric thin film as described above.1.・In the case of IA, each element is not separated (but the number of steps can be reduced because the crosstalk is small. Also, by using a pyroelectric thin film with natural polarization in which Ps is already aligned, it is not necessary to perform polarization processing. It is possible to realize a high-performance pyroelectric infrared array element with high yield and high yield.
実施例
第１図は本発明の焦電型赤外線アレイ素子の構造を示す
図である。Embodiment FIG. 1 is a diagram showing the structure of a pyroelectric infrared array element of the present invention.
（１００）でへき開し鏡面研摩したＭｇＯ単結晶基板１
上に、電極薄膜２として膜厚０．１〜０．４μｍのＰｔ
薄膜をスパッタリングにより形成した。スパッタガスは
Ａｒ−０２混合ガスである。ついで、焦電薄膜３として
Ｐｂ１−ｘＬａｘ Ｔｉｔ−ｏ、７ｓｘ ０３ （ＰＬ
Ｔ）を４μｍ成長させた。方法は高周波マグネトロンス
パッタ法で、Ａｒと０２の混合ガスを用い、スパッタリ
ングターゲットは
１ （１−Ｙ） Ｐｂ＋−ｘ １．ａｘ Ｔｉｔ−ｏ７
ｓｘ ０３ ＋Ｙ Ｐｂ０１の粉末である。表１にスパ
ッタリング条件を示す。(100) cleaved and mirror polished MgO single crystal substrate 1
On top, Pt with a film thickness of 0.1 to 0.4 μm is deposited as the electrode thin film 2.
A thin film was formed by sputtering. The sputtering gas is an Ar-02 mixed gas. Next, as the pyroelectric thin film 3, Pb1-xLax Tit-o, 7sx 03 (PL
T) was grown to 4 μm. The method is high-frequency magnetron sputtering, using a mixed gas of Ar and 02, and the sputtering target is 1 (1-Y) Pb+-x 1. ax Tit-o7
sx 03 +Y Pb01 powder. Table 1 shows the sputtering conditions.
次に、この焦電薄膜３上にＮｉＣｒからなる複数の受光
電極薄膜４を蒸着した後、取り出し電極５を作製した。Next, a plurality of light-receiving electrode thin films 4 made of NiCr were deposited on this pyroelectric thin film 3, and then an extraction electrode 5 was produced.
さらに、焦電薄膜３の下部におけるＭｇＯ基板１を熱濃
燐酸によりエツチングし開口部６を設けた。Further, the MgO substrate 1 below the pyroelectric thin film 3 was etched with hot concentrated phosphoric acid to form an opening 6.
表 １
第２図及び第３図に電極薄膜２の膜厚が変化したときの
、クロストークと感度の変化の様子を示す。クロストー
クと感度は電極薄膜２の膜厚に強（影響を受け、膜厚の
減少とともにクロストークは減少し感度は増大する。電
極薄膜２の膜厚が０．１μｍのとき、電極薄膜２が各エ
レメント毎に分離している試料と比較してクロストーク
の値は２割程度大きかった。したがって上記膜厚のとき
、電極薄膜２による熱伝導が焦電薄膜３による熱伝導よ
り小さいと考えられる。Table 1 Figures 2 and 3 show how crosstalk and sensitivity change when the thickness of the electrode thin film 2 changes. Crosstalk and sensitivity are strongly influenced by the thickness of the electrode thin film 2, and as the film thickness decreases, crosstalk decreases and sensitivity increases.When the thickness of the electrode thin film 2 is 0.1 μm, the electrode thin film 2 The crosstalk value was about 20% larger than that of the sample in which each element was separated. Therefore, at the above film thickness, it is thought that the heat conduction through the electrode thin film 2 is smaller than the heat conduction through the pyroelectric thin film 3. .
ＰＬＴ焦電薄膜が分極軸の７５８以上が一方向に配向し
ているとき、焦電係数：γは５×１０−８Ｃ／ ｃｄＫ
となり、この値は２００℃で１００ ｋ Ｖ ／ ｃｔ
ａ印加して分極処理を行ったＰｂＴｉＯ３セラミクス（
ｙ−１，８ｘｌＯ−８Ｃ／ ｃｄ Ｋ ）と（らべかな
り大きい。配向率９０名の場合焦電係数は６．８ＸｌＯ
−’Ｃ／ ｃ＋ＪＫである。また、分極処理後の値と比
べ殆ど変わらないばかりでなく、配向率が小さい場合の
分極後の値より大きい。誘電率は、配向率９０′Ｘ、の
場合、セラミクスとほぼ同等の値で約２００である。When the PLT pyroelectric thin film has polarization axes of 758 or more oriented in one direction, the pyroelectric coefficient: γ is 5 × 10-8C/cdK
and this value is 100 kV/ct at 200℃
PbTiO3 ceramics (
y-1,8xlO-8C/cd K ) and (compared to (cd K ), which is quite large. When the orientation rate is 90, the pyroelectric coefficient is 6.8XlO
-'C/c+JK. Moreover, not only is it almost the same as the value after polarization treatment, but it is also larger than the value after polarization when the orientation rate is small. When the orientation rate is 90'X, the dielectric constant is approximately 200, which is approximately the same value as ceramics.
本実施例に用いたＰＬＴ薄膜では、薄膜作製時に十分に
Ｃ軸に配向しておれば分極処理を行わなくても自発分極
が揃っており、特に配向率７５％以上の薄膜でその効果
が大きい。また、焦電材料としての性能指数であるＦｖ
（−γ／εＣν）の値も大きくなる。２００℃で１０分
間１００に’／／ｃ＋＊印加して分極処理を行ったＰｂ
ＴｉＯ３セラミクスの値と比較して、ＰＬＴ薄膜は３倍
強の値を示した。In the PLT thin film used in this example, if the thin film is sufficiently oriented along the C-axis during production, the spontaneous polarization will be uniform even without polarization treatment, and this effect is particularly large for thin films with an orientation rate of 75% or more. . In addition, Fv, which is the figure of merit as a pyroelectric material,
The value of (-γ/εCν) also increases. Pb was polarized by applying 100'//c+* at 200°C for 10 minutes.
Compared to the value of TiO3 ceramics, the PLT thin film showed a value more than three times higher.
以上述べたように、本発明による焦電薄膜を用いた焦電
型赤外線アレイ素子は、焦電薄膜を各エレメント毎に分
′離することな（優れた特性を実現することができる。As described above, the pyroelectric infrared array element using the pyroelectric thin film according to the present invention can achieve excellent characteristics without separating the pyroelectric thin film into each element.
発明の効果
本発明による焦電型赤外線アレイ素子は、焦電薄膜を各
エレメント毎に分離しない構成であるので、工程数が減
り、位置合わせの問題が解消し、高密度アレイが可能と
なる。また分極処理が不要であり高性能指数である焦電
薄膜を用いるので、特性も優れていて、歩留まりも大幅
に減少するので実用的にきわめて有効である。Effects of the Invention The pyroelectric infrared array element according to the present invention has a structure in which the pyroelectric thin film is not separated into each element, so the number of steps is reduced, alignment problems are solved, and a high-density array is possible. Furthermore, since a pyroelectric thin film is used that does not require polarization treatment and has a high performance index, it has excellent characteristics and the yield is significantly reduced, making it extremely effective in practice.
第１図は本発明の一実施例における焦電型赤外線アレイ
素子の構造を示す斜視図、第２図及び第３図は各々、本
発明の一実施例に於ける電極薄膜の膜厚と、クロストー
ク及び感度との関係を示Ａグラフである。
１・・・・ＭｇＯ基板、２・・・・電極薄膜、３・・・
・焦電薄膜、４・・・・受光電極薄膜、６・・・・開口
部。
代理人の氏名 弁理士 中尾敏男 ばか１名第１図
開口部
第２図
電＆薄膜の膵し厚Ｃ声〕FIG. 1 is a perspective view showing the structure of a pyroelectric infrared array element in an embodiment of the present invention, and FIGS. 2 and 3 respectively show the thickness of the electrode thin film in an embodiment of the present invention, and Graph A shows the relationship between crosstalk and sensitivity. 1... MgO substrate, 2... electrode thin film, 3...
- Pyroelectric thin film, 4... Light-receiving electrode thin film, 6... Opening. Name of agent Patent attorney Toshio Nakao One idiot Figure 1 Opening Figure 2 Electron & thin pancreas Thick C voice]
Claims (4)
と、前記第１の電極薄膜上に作られた化学式がＰｂ＿１
＿−＿ｘＬａ＿ｘＴｉ＿１＿−＿０＿．＿７＿５＿ｘＯ
＿３で組成範囲が０＜Ｘ＜０．１５であり＜００１＞方
向に配向している焦電薄膜と、前記焦電薄膜上に形成さ
れた複数の分離した受光電極薄膜とを有することを特徴
とする焦電型赤外線アレイ素子。(1) A substrate, a first electrode thin film formed on the substrate, and a chemical formula formed on the first electrode thin film is Pb_1
____xLa_xTi_1_-_0_. ＿7＿5＿xO
It is characterized by having a pyroelectric thin film that is _3, has a composition range of 0<X<0.15, and is oriented in the <001> direction, and a plurality of separate light-receiving electrode thin films formed on the pyroelectric thin film. A pyroelectric infrared array element.
る熱伝導より小さくなるように前記第１の電極薄膜の膜
厚を薄くしたことを特徴とする特許請求の範囲第１項記
載の焦電型赤外線アレイ素子。(2) The thickness of the first electrode thin film is made thin so that the heat conduction in the film direction of the first electrode thin film is smaller than the heat conduction through the pyroelectric thin film. The pyroelectric infrared array element described above.
たことを特徴とする特許請求の範囲第１項記載の焦電型
赤外線アレイ素子。(3) The pyroelectric infrared array element according to claim 1, wherein a part of the substrate that contacts the first electrode thin film is removed.
たことを特徴とする特許請求の範囲第２項記載の焦電型
赤外線アレイ素子。(4) The pyroelectric infrared array element according to claim 2, wherein (100)-oriented platinum is used for the first electrode thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61272488A JPH0749997B2 (en) | 1986-11-14 | 1986-11-14 | Pyroelectric infrared array element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61272488A JPH0749997B2 (en) | 1986-11-14 | 1986-11-14 | Pyroelectric infrared array element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63124923A true JPS63124923A (en) | 1988-05-28 |
| JPH0749997B2 JPH0749997B2 (en) | 1995-05-31 |
Family
ID=17514619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61272488A Expired - Fee Related JPH0749997B2 (en) | 1986-11-14 | 1986-11-14 | Pyroelectric infrared array element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0749997B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5446284A (en) * | 1994-01-25 | 1995-08-29 | Loral Infrared & Imaging Systems, Inc. | Monolithic detector array apparatus |
| US5448068A (en) * | 1993-06-22 | 1995-09-05 | Goldstar Co., Ltd. | Pyroelectric thin film infrared sensor and method for fabricating the same |
-
1986
- 1986-11-14 JP JP61272488A patent/JPH0749997B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5448068A (en) * | 1993-06-22 | 1995-09-05 | Goldstar Co., Ltd. | Pyroelectric thin film infrared sensor and method for fabricating the same |
| US5446284A (en) * | 1994-01-25 | 1995-08-29 | Loral Infrared & Imaging Systems, Inc. | Monolithic detector array apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0749997B2 (en) | 1995-05-31 |
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