JPS6330789B2 - - Google Patents
Info
- Publication number
- JPS6330789B2 JPS6330789B2 JP56165829A JP16582981A JPS6330789B2 JP S6330789 B2 JPS6330789 B2 JP S6330789B2 JP 56165829 A JP56165829 A JP 56165829A JP 16582981 A JP16582981 A JP 16582981A JP S6330789 B2 JPS6330789 B2 JP S6330789B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- impurity concentration
- high impurity
- type high
- concentration layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 21
- 238000010030 laminating Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 46
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000005036 potential barrier Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】
この発明は太陽電池、特に多層傾斜型構造太陽
電池の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in solar cells, particularly solar cells with a multilayer gradient structure.
非晶質Si等を用いた薄膜太陽電池では、キヤリ
アの発生源となる活性層をある特定のバンドギヤ
ツプを有する単一の層で形成した場合、利用し得
る光の波長領域が限られることから、高効率化の
為に、異なるバンドギヤツプを有する２層以上の
層を積層して活性層を形成する構造が提案されて
おり、その１つに傾斜型構造のものがある。 In thin-film solar cells using amorphous Si, etc., if the active layer, which is the source of carrier generation, is formed of a single layer with a specific band gap, the wavelength range of light that can be used is limited. In order to improve efficiency, a structure has been proposed in which an active layer is formed by laminating two or more layers having different band gaps, one of which is a sloped structure.
第１図に、活性層として非晶質Si（例えばバン
ドギヤツプEg＝1.8eV）と非晶質SiGe（例えばEg
＝1.4eV）の２層を用いて作成した従来のpin傾
斜型太陽電池のバンドダイヤグラムを示す。１は
Ｐ型高不純物濃度層、２はノンドープ非晶質Si層
（Eg＝1.8eV）、３はノンドープ非晶質SiGe層
（Eg＝1.4eV）、４はｎ型高不純物濃度層である。
Ｐ型高不純物濃度層１側から入射した光は、活性
層２，３中で吸収されてキヤリアを発生させる。
しかし、活性層２，３において、フエルミ準位
EFが禁制帯のほぼ中央にあるとすると、層３で
発生したキヤリアのうち正孔に対しては約0.2eV
の電位障壁が存在する為、光電流が抑制される。 Figure 1 shows amorphous Si (for example, bandgap Eg = 1.8 eV) and amorphous SiGe (for example, Eg
The band diagram of a conventional pin-tilted solar cell made using two layers with a voltage of 1.4 eV) is shown. 1 is a P-type high impurity concentration layer, 2 is a non-doped amorphous Si layer (Eg = 1.8 eV), 3 is a non-doped amorphous SiGe layer (Eg = 1.4 eV), and 4 is an n-type high impurity concentration layer.
Light incident from the P-type high impurity concentration layer 1 side is absorbed in the active layers 2 and 3 to generate carriers.
However, in active layers 2 and 3, the Fermi level
Assuming that E F is approximately in the center of the forbidden band, of the carriers generated in layer 3, the difference for holes is approximately 0.2 eV.
Because of the presence of a potential barrier, photocurrent is suppressed.
第２図は、ｎ型高不純物ｎ型層４側から光が入
射する従来のnip傾斜型太陽電池のバンドダイヤ
グラムで、この場合には、層３で発生したキヤリ
アのうち電子に対して電位障壁が存在するため、
第１図の場合と同様に光電流が抑制される。 Figure 2 is a band diagram of a conventional nip-tilt solar cell in which light enters from the n-type highly impurity n-type layer 4 side. Because there is
The photocurrent is suppressed as in the case of FIG.
この発明はこのような点に鑑みてなされたもの
で、活性層を構成する複数の層のうちの１つをノ
ンドープ層とし、このノンドープ層に対し上記Ｐ
型高不純物濃度層側あるいは上記Ｎ型高不純物濃
度層側の活性層を構成する層を、その近接する高
不純物濃度層と同一導電型の低不純物濃度層とな
し、上記ノンドープ層と、このノンドープ層とは
異なるバンドギヤツプを有し、かつ隣接して、活
性層を構成する層との間の界面に発生するキヤリ
アに対する電位障壁を軽減することにより、太陽
電池の効率を向上させることを目的とする。 This invention was made in view of the above points, and one of the plurality of layers constituting the active layer is a non-doped layer, and the above-mentioned P is applied to the non-doped layer.
The layer constituting the active layer on the type high impurity concentration layer side or the N type high impurity concentration layer side is a low impurity concentration layer of the same conductivity type as the adjacent high impurity concentration layer, and the non-doped layer and this non-doped layer are The purpose is to improve the efficiency of solar cells by reducing the potential barrier to carriers that occurs at the interface between layers that have a different band gap from the active layer and the adjacent layer that constitutes the active layer. .
この発明の一実施例のバンドダイヤグラムを第
３図に示す。この実施例は、第１図における層３
に代えてわずかにｎ型にドーピングした非晶質
SiGeからなる低不純物濃度層３ａを用い、フエ
ルミ準位をシフトさせて価電子帯の上部を水平に
することにより、正孔に対する電位障壁をなく
し、光電流の向上を図つたものである。 A band diagram of one embodiment of this invention is shown in FIG. In this embodiment, layer 3 in FIG.
Slightly n-doped amorphous instead of
By using a low impurity concentration layer 3a made of SiGe and shifting the Fermi level to make the upper part of the valence band horizontal, the potential barrier to holes is eliminated and the photocurrent is improved.
第４図及び第５図は、本発明により第２図に示
した構造を改良したもののバンドダイヤグラムで
ある。第４図は、ノンドープ非晶質Si層２の代り
にわずかにｎ型にドープした非晶質Siからなる低
不純物濃度層２ａを用いて電子に対する電位障壁
をなくしたもので、第５図は、ノンドープ非晶質
SiGe層３の代りにわずかにｐ型にドープした非
晶質SiGe層３ｂを用いて、同様に障壁をなくし
た例である。 4 and 5 are band diagrams of an improved structure shown in FIG. 2 according to the present invention. Figure 4 shows a case in which a low impurity concentration layer 2a made of slightly n-doped amorphous Si is used in place of the non-doped amorphous Si layer 2 to eliminate the potential barrier to electrons. , non-doped amorphous
This is an example in which a slightly p-doped amorphous SiGe layer 3b is used instead of the SiGe layer 3 to eliminate the barrier.
本発明は、太陽電池としての特性をさほど低下
させることなくドーピングが行い得る場合に特に
有効であり、活性層が２層のみならず、これより
多層構造の素子の場合にも適用できることはもち
ろんである。 The present invention is particularly effective when doping can be performed without significantly deteriorating the characteristics of the solar cell, and it goes without saying that it can be applied not only to devices with two active layers but also to devices with multilayer structures. be.
また、活性層を構成する材料としては、上記の
他に非晶質Geも用い得ることはいうまでもない。 Moreover, it goes without saying that amorphous Ge can also be used as a material constituting the active layer in addition to the above.
以上のようにこの発明によれば、活性層を構成
する複数の層間の界面に発生するキヤリアに対す
る電位障壁を軽減するようにしたので、効率の優
れた太陽電池を実現することができる。 As described above, according to the present invention, the potential barrier to carriers generated at the interface between the plurality of layers constituting the active layer is reduced, so it is possible to realize a highly efficient solar cell.
第１図及び第２図は従来の傾斜型太陽電池のバ
ンド構造図、第３図〜第５図は本発明による傾斜
型構造太陽電池のバンド構造図である。
図において、１は高不純物濃度層、２はノンド
ープ非晶質Si層、３はノンドープ非晶質SiGe層、
４はｎ型高不純物濃度層、２ａはわずかにｎ型に
ドープした非晶質Siからなる低不純物濃度層、３
ａはわずかにｎ型にドープした非晶質SiGe層、
３ｂはわずかにｐ型にドープした非晶質SiGe層
である。なお、図中同一符号はそれぞれ同一また
は相当部分を示す。
1 and 2 are band structure diagrams of a conventional tilted solar cell, and FIGS. 3 to 5 are band structure diagrams of a tilted solar cell according to the present invention. In the figure, 1 is a high impurity concentration layer, 2 is a non-doped amorphous Si layer, 3 is a non-doped amorphous SiGe layer,
4 is an n-type high impurity concentration layer, 2a is a low impurity concentration layer made of slightly n-doped amorphous Si, 3
a is a slightly n-doped amorphous SiGe layer;
3b is a slightly p-doped amorphous SiGe layer. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
の間に、異なるバンドギヤツプを有する複数の層
を積層して活性層を形成した太陽電池において、
上記活性層を構成する複数の層のうちの１つをノ
ンドープ層とし、このノンドープ層に対し上記Ｐ
型高不純物濃度層側あるいは上記Ｎ型高不純物濃
度層側の活性層を構成する層を、その近接する上
記Ｐ型高不純濃度層あるいは上記Ｎ型高不純物濃
度層と同一導電型の低不純物濃度層となし、上記
ノンドープ層とこのノンドープ層とは異なるバン
ドギヤツプを有し、かつ隣接して、活性層を構成
する上記低不純物濃度層との間の界面に発生する
キヤリアに対する電位障壁を軽減したことを特徴
とする太陽電池。1. In a solar cell in which an active layer is formed by laminating a plurality of layers having different band gaps between a P-type high impurity concentration layer and an N-type high impurity concentration layer,
One of the plurality of layers constituting the active layer is a non-doped layer, and the above-mentioned P
The layer constituting the active layer on the high impurity concentration layer side or the N type high impurity concentration layer is a low impurity concentration layer of the same conductivity type as the adjacent P type high impurity concentration layer or the N type high impurity concentration layer. The non-doped layer has a different band gap from the non-doped layer and the adjacent low impurity concentration layer constituting the active layer. A solar cell featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56165829A JPS5867073A (en) | 1981-10-19 | 1981-10-19 | Solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56165829A JPS5867073A (en) | 1981-10-19 | 1981-10-19 | Solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5867073A JPS5867073A (en) | 1983-04-21 |
| JPS6330789B2 true JPS6330789B2 (en) | 1988-06-21 |
Family
ID=15819788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56165829A Granted JPS5867073A (en) | 1981-10-19 | 1981-10-19 | Solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5867073A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61222278A (en) * | 1985-03-28 | 1986-10-02 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS61241985A (en) * | 1985-04-19 | 1986-10-28 | Eizo Yamaga | Infrared-ray detector |
| JPS6249672A (en) * | 1985-08-29 | 1987-03-04 | Sumitomo Electric Ind Ltd | Amorphous photovoltaic element |
| JP3490964B2 (en) | 2000-09-05 | 2004-01-26 | 三洋電機株式会社 | Photovoltaic device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5511329A (en) * | 1978-07-08 | 1980-01-26 | Shunpei Yamazaki | Semiconductor device |
| JPS5513939A (en) * | 1978-07-17 | 1980-01-31 | Shunpei Yamazaki | Photoelectronic conversion semiconductor device |
| JPS5513938A (en) * | 1978-07-17 | 1980-01-31 | Shunpei Yamazaki | Photoelectronic conversion semiconductor device and its manufacturing method |
-
1981
- 1981-10-19 JP JP56165829A patent/JPS5867073A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5511329A (en) * | 1978-07-08 | 1980-01-26 | Shunpei Yamazaki | Semiconductor device |
| JPS5513939A (en) * | 1978-07-17 | 1980-01-31 | Shunpei Yamazaki | Photoelectronic conversion semiconductor device |
| JPS5513938A (en) * | 1978-07-17 | 1980-01-31 | Shunpei Yamazaki | Photoelectronic conversion semiconductor device and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5867073A (en) | 1983-04-21 |
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