JPS63300516A - Formation of resist pattern of semiconductor device - Google Patents
Formation of resist pattern of semiconductor deviceInfo
- Publication number
- JPS63300516A JPS63300516A JP62135692A JP13569287A JPS63300516A JP S63300516 A JPS63300516 A JP S63300516A JP 62135692 A JP62135692 A JP 62135692A JP 13569287 A JP13569287 A JP 13569287A JP S63300516 A JPS63300516 A JP S63300516A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- photoresist layer
- resist pattern
- ultraviolet light
- polarized ultraviolet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 28
- 230000010287 polarization Effects 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、半導体装置のレジストパターン形成方法に関
する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a resist pattern forming method for a semiconductor device.
〈従来の技術〉
従来から、半導体装置のりソゲラフイエ程においては、
半導体基板の表面に形成されたホトレジスト層を紫外線
光で露光することによって所定のレジストパターンを形
成している。<Conventional technology> Conventionally, in the process of manufacturing semiconductor devices,
A predetermined resist pattern is formed by exposing a photoresist layer formed on the surface of a semiconductor substrate to ultraviolet light.
第２図はレジストパターン形成中の半導体装置を示す断
面図であって、基板３０の表面にはアルミニウムなどか
らなる電極３１が形成され、この電極３１を含む基板３
０表面上にはホトレジスト層３２が形成されている。そ
して、このホトレジストＮ３２には所定形状の開口部３
３を有するマスク３４を介して基板３０表面の法線方向
から紫外線光３５が照射され、この紫外線光３５によっ
てホトレジスト層３２の不要部分３２ａが露光されるこ
とによってレジストパターンが形成されるようになって
いる。FIG. 2 is a cross-sectional view showing a semiconductor device during formation of a resist pattern, in which an electrode 31 made of aluminum or the like is formed on the surface of a substrate 30, and a substrate 30 including this electrode 31 is formed on the surface of a substrate 30.
A photoresist layer 32 is formed on the 0 surface. This photoresist N32 has an opening 3 of a predetermined shape.
Ultraviolet light 35 is irradiated from the normal direction of the surface of the substrate 30 through a mask 34 having a mask 34, and unnecessary portions 32a of the photoresist layer 32 are exposed to the ultraviolet light 35, thereby forming a resist pattern. ing.
〈発明が解決しようとする問題点〉
ところで、前記半導体装置を構成する基板３０の表面お
よび電極３１の表面は銀白色に近い色を呈しており、入
射してきた光を反射する反射面となっている。そのため
、ホトレジスト層３２を透過してこれらの反射面に到達
した紫外線光３５は入射方向とは正反対の逆方向へ反射
されることになる。<Problems to be Solved by the Invention> Incidentally, the surface of the substrate 30 and the surface of the electrode 31 constituting the semiconductor device exhibit a color close to silvery white, and act as reflective surfaces that reflect incident light. There is. Therefore, the ultraviolet light 35 that has passed through the photoresist layer 32 and reached these reflective surfaces is reflected in the opposite direction to the direction of incidence.
ところが、実際上、基板３０の表面には微細な凹凸があ
るので入射してきた紫外線光３５はこれらの凹凸によっ
て乱反射されてしまうことになる。特に、基板３０表面
と電極３１とによって構成される段差部の位置に入射し
てきた紫外線光３５は、電極３１の角や側面によって乱
反射されてしまう。そして、これらからの反射光３５ａ
は未露光のホトレジスト部分３２ｂにまで侵入し、この
部分３２ｂを露光させてしまうことになる。However, in reality, since the surface of the substrate 30 has minute irregularities, the incident ultraviolet light 35 is diffusely reflected by these irregularities. In particular, the ultraviolet light 35 that has entered the position of the step formed by the surface of the substrate 30 and the electrode 31 is diffusely reflected by the corners and side surfaces of the electrode 31. And reflected light 35a from these
penetrates into the unexposed photoresist portion 32b, exposing this portion 32b.
そのため、従来のレジストパターン形成方法においては
、ホトレジスト層３２の不要部分３２ａばかりでなく、
不要部分３２ａの側部に位置するホトレジスト部分３２
ｂまでもが反射光３５ａの影響によって露光されてしま
い、正確なレジストパターンを精度よく形成することが
できないという問題点があった。Therefore, in the conventional resist pattern forming method, not only unnecessary parts 32a of the photoresist layer 32 but also
Photoresist portion 32 located on the side of unnecessary portion 32a
There was a problem in that even portions b were exposed due to the influence of the reflected light 35a, making it impossible to form an accurate resist pattern with high precision.
本発明はかかる従来の問題点に鑑み、基板表面の凹凸や
段差部によって紫外線光が反射されることがな（、正確
なレジストパターンの形成を図ることができる方法の提
供を目的とする。In view of these conventional problems, it is an object of the present invention to provide a method that can form an accurate resist pattern without causing ultraviolet light to be reflected by unevenness or stepped portions on the surface of a substrate.
〈問題点を解決するための手段〉
本発明は、このような目的を達成するために、半導体基
板の表面にホトレジスト層を形成し、マスクを介して照
射された紫外線光により前記ホトレジスト層の不要部分
を露光する半導体装置のレジストパターン形成方法にお
いて、前記基板表面と前記ホトレジスト層との間に偏光
膜を設け、この偏光膜の偏光方向と異なる方向に偏光さ
れた偏光紫外線光の照射により前記ホトレジスト層を露
光することを特徴とするものである。<Means for Solving the Problems> In order to achieve the above object, the present invention forms a photoresist layer on the surface of a semiconductor substrate, and eliminates the need for the photoresist layer by using ultraviolet light irradiated through a mask. In a resist pattern forming method for a semiconductor device in which a portion is exposed to light, a polarizing film is provided between the substrate surface and the photoresist layer, and the photoresist is irradiated with polarized ultraviolet light polarized in a direction different from the polarization direction of the polarizing film. It is characterized by exposing the layer to light.
く作用〉
本発明によれば、ホトレジスト層を透過してきた偏光紫
外線光は半導体基板の表面に設けられた偏光膜によって
遮られて半導体基板の表面にまでは到達しないので、基
板表面の凹凸や段差部によって偏光紫外線光が乱反射さ
せられることはない。According to the present invention, the polarized ultraviolet light transmitted through the photoresist layer is blocked by the polarizing film provided on the surface of the semiconductor substrate and does not reach the surface of the semiconductor substrate. polarized ultraviolet light is not diffusely reflected by the
そのため、ホトレジスト層が反射光の影響を被ることは
なく、正確なレジストパターンを形成することができる
。Therefore, the photoresist layer is not affected by reflected light, and an accurate resist pattern can be formed.
〈実施例〉
以下、本発明を図面に示す一実施例に基づき詳細に説明
する。<Example> Hereinafter, the present invention will be described in detail based on an example shown in the drawings.
第１図はレジストパターン形成中の半導体装置を示す断
面図であって、符号１ｏは半導体基板である。FIG. 1 is a sectional view showing a semiconductor device during formation of a resist pattern, and reference numeral 1o indicates a semiconductor substrate.
半導体基板１０表面にはアルミニウムなどからなる電極
１１が形成され、この電極１１を含む基板１ｏの表面は
シート状に形成された偏光膜１２によって覆われている
。この偏光膜１２はその偏光軸に沿う方向に振動する光
成分のみを通過させるものであって、その偏光軸と異な
る方向に振動する光成分の通過は阻止するようになって
いる。そして、この偏光膜１２の上には、ホトレジスト
層１３が形成されている。An electrode 11 made of aluminum or the like is formed on the surface of the semiconductor substrate 10, and the surface of the substrate 1o including this electrode 11 is covered with a polarizing film 12 formed in a sheet shape. The polarizing film 12 allows only light components vibrating in a direction along the polarization axis to pass therethrough, and blocks light components vibrating in a direction different from the polarization axis from passing through. A photoresist layer 13 is formed on this polarizing film 12.
また、基板１００表面の法線方向に沿う上方には所定形
状の開口部１４を有するマスク１５がセットされるとと
もに、このマスク１５の上方には偏光フィルタ１６がセ
ントされている。この偏光フィルタ１６は、前述した偏
光膜１２の偏光軸と直交する方向の偏光軸を有している
。Further, a mask 15 having an opening 14 of a predetermined shape is set above the substrate 100 along the normal direction, and a polarizing filter 16 is placed above the mask 15 . This polarizing filter 16 has a polarizing axis in a direction perpendicular to the polarizing axis of the polarizing film 12 described above.
つぎに、本発明のレジストパターン形成方法について、
説明する。Next, regarding the resist pattern forming method of the present invention,
explain.
偏光フィルタ１６の上方から照射された紫外線光は、こ
の偏光フィルタ１６を通過する際にその偏光軸に沿う方
向に偏光され、このフィルタ１６と同一方向に振動する
光成分のみからなる偏光紫外線光１７となる。したがっ
て、ａ［１０のホトレジスト層１３にはマスク１５の開
口部１４を通過してきた偏光紫外線光１７が照射され、
その不要部分１３ａは偏光紫外線光１７によって露光さ
れる。The ultraviolet light irradiated from above the polarizing filter 16 is polarized in the direction along the polarization axis when passing through the polarizing filter 16, and polarized ultraviolet light 17 is made up of only light components that vibrate in the same direction as the filter 16. becomes. Therefore, the photoresist layer 13 of a[10 is irradiated with the polarized ultraviolet light 17 that has passed through the opening 14 of the mask 15,
The unnecessary portion 13a is exposed to polarized ultraviolet light 17.
このとき、偏光紫外線光１７はホトレジスト層１３の不
要部分１３ａを透過してその内部にまで入射して（るが
、基板１０表面への入射は偏光紫外線光１７の偏光方向
と異なる偏光方向を有する偏光膜１２の作用によって遮
られてしまい、基板１ｏの表面にまで到達しない、その
ため、基板１０表面の凹凸や段差部によって偏光紫外線
光が乱反射させられることはなく、従来例のように、そ
の反射光が発生することはない。At this time, the polarized ultraviolet light 17 passes through the unnecessary portion 13a of the photoresist layer 13 and enters the interior thereof (However, the incident on the surface of the substrate 10 has a polarization direction different from that of the polarized ultraviolet light 17. The polarized ultraviolet light is blocked by the action of the polarizing film 12 and does not reach the surface of the substrate 1o. Therefore, the polarized ultraviolet light is not diffusely reflected by unevenness or stepped portions on the surface of the substrate 10, and the reflected light is not reflected as in the conventional example. No light is produced.
〈発明の効果〉
以上説明したように、本発明のレジストパターン形成方
法によれば、半導体基板の表面を偏光膜で覆っているの
で、この偏光膜上のホトレジスト層を透過してきた偏光
方向の異なる偏光紫外線光の通過は偏光膜によって遮ら
れ、半導体基板の表面にまで到達しなくなる。したがっ
て、基板の表面に凹凸や段差部が存在していても、これ
らによって偏光紫外線光が乱反射させられることはなく
、従来例のような反射光が発生することがない。<Effects of the Invention> As explained above, according to the resist pattern forming method of the present invention, since the surface of the semiconductor substrate is covered with a polarizing film, different directions of polarization transmitted through the photoresist layer on the polarizing film are Passage of the polarized ultraviolet light is blocked by the polarizing film and does not reach the surface of the semiconductor substrate. Therefore, even if there are irregularities or stepped portions on the surface of the substrate, polarized ultraviolet light is not diffusely reflected by these, and reflected light as in the conventional example is not generated.
そのため、ホトレジスト層が反射光の影響を被って余分
に露光されてしまうことがないので、正確なレジストパ
ターンを精度よく形成することができる。Therefore, since the photoresist layer is not exposed to excess light due to the influence of reflected light, a precise resist pattern can be formed with high precision.
第１図は本発明の一実施例に係るレジストパターン形成
中の半導体装置を示す断面図であり、第２図は従来例に
おける半導体装置を示す断面図である。
１０・・・半導体基板、
１２・・・偏光膜、
１３・・・ホトレジスト層、
１３ａ・・・ホトレジスト層の不要部分、１５・・・マ
スク、
１７・・・偏光紫外線光。FIG. 1 is a sectional view showing a semiconductor device during formation of a resist pattern according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a semiconductor device in a conventional example. DESCRIPTION OF SYMBOLS 10... Semiconductor substrate, 12... Polarizing film, 13... Photoresist layer, 13a... Unnecessary part of photoresist layer, 15... Mask, 17... Polarized ultraviolet light.
Claims (1)
スクを介して照射された紫外線光により前記ホトレジス
ト層の不要部分を露光する半導体装置のレジストパター
ン形成方法において、 前記基板表面と前記ホトレジスト層との間に偏光膜を設
け、この偏光膜の偏光方向と異なる方向に偏光された偏
光紫外線光の照射により前記ホトレジスト層を露光する
ことを特徴とする半導体装置のレジストパターン形成方
法。(1) A resist pattern forming method for a semiconductor device in which a photoresist layer is formed on the surface of a semiconductor substrate, and unnecessary portions of the photoresist layer are exposed to ultraviolet light irradiated through a mask, wherein the substrate surface and the photoresist layer are A method for forming a resist pattern for a semiconductor device, characterized in that a polarizing film is provided between the photoresist layers and the photoresist layer is exposed to polarized ultraviolet light polarized in a direction different from the polarization direction of the polarizing film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62135692A JPS63300516A (en) | 1987-05-30 | 1987-05-30 | Formation of resist pattern of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62135692A JPS63300516A (en) | 1987-05-30 | 1987-05-30 | Formation of resist pattern of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63300516A true JPS63300516A (en) | 1988-12-07 |
| JPH0515301B2 JPH0515301B2 (en) | 1993-03-01 |
Family
ID=15157682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62135692A Granted JPS63300516A (en) | 1987-05-30 | 1987-05-30 | Formation of resist pattern of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63300516A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6355387B1 (en) * | 1995-06-23 | 2002-03-12 | Mitsubishi Denki Kabushiki Kaisha | Method of making a mask pattern |
| JP2010199442A (en) * | 2009-02-26 | 2010-09-09 | Sharp Corp | Method of forming resist pattern, method of manufacturing semiconductor device, method of manufacturing solid-state imaging element, solid-state imaging element, and electronic information equipment |
-
1987
- 1987-05-30 JP JP62135692A patent/JPS63300516A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6355387B1 (en) * | 1995-06-23 | 2002-03-12 | Mitsubishi Denki Kabushiki Kaisha | Method of making a mask pattern |
| JP2010199442A (en) * | 2009-02-26 | 2010-09-09 | Sharp Corp | Method of forming resist pattern, method of manufacturing semiconductor device, method of manufacturing solid-state imaging element, solid-state imaging element, and electronic information equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0515301B2 (en) | 1993-03-01 |
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