JPS6329926U - - Google Patents
Info
- Publication number
- JPS6329926U JPS6329926U JP12201786U JP12201786U JPS6329926U JP S6329926 U JPS6329926 U JP S6329926U JP 12201786 U JP12201786 U JP 12201786U JP 12201786 U JP12201786 U JP 12201786U JP S6329926 U JPS6329926 U JP S6329926U
- Authority
- JP
- Japan
- Prior art keywords
- crystal growth
- molecular beam
- beam crystal
- molecular
- load lock
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims 3
- 239000000155 melt Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986122017U JPH0451472Y2 (cs) | 1986-08-08 | 1986-08-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986122017U JPH0451472Y2 (cs) | 1986-08-08 | 1986-08-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6329926U true JPS6329926U (cs) | 1988-02-27 |
| JPH0451472Y2 JPH0451472Y2 (cs) | 1992-12-03 |
Family
ID=31011822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986122017U Expired JPH0451472Y2 (cs) | 1986-08-08 | 1986-08-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0451472Y2 (cs) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5833825A (ja) * | 1981-08-22 | 1983-02-28 | Nippon Telegr & Teleph Corp <Ntt> | 分子線エピタキシヤル成長装置 |
| JPS58162029A (ja) * | 1982-03-23 | 1983-09-26 | Hoxan Corp | 多結晶シリコンウエハの製造方法 |
-
1986
- 1986-08-08 JP JP1986122017U patent/JPH0451472Y2/ja not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5833825A (ja) * | 1981-08-22 | 1983-02-28 | Nippon Telegr & Teleph Corp <Ntt> | 分子線エピタキシヤル成長装置 |
| JPS58162029A (ja) * | 1982-03-23 | 1983-09-26 | Hoxan Corp | 多結晶シリコンウエハの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0451472Y2 (cs) | 1992-12-03 |
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