JPS63296963A - Manufacture of recording electrode plate - Google Patents

Abstract

PURPOSE:To obtain a recording electrode plate on which a conductive circuit of a good transfer property and high density is certainly formed without any pinhole on the conductive circuit part, by a method wherein a thin film metal layer is placed between a conductive circuit and a conductive base material, and the conductive circuit is plated with gold by performing plating formation of the thin film metal layer and the conductive circuit by a specific method. CONSTITUTION:A part of a cathode is made from a plate conductive base material 2 of 0.08-0.23mum in surface roughness, and a distance between the cathode 1 and a plate anode is made 3-30mm. Electrolyte is so supplied that a wetted speed becomes 2.6-20.0m/sec. A thin film metal layer 5 of 1-5mum in thickness is formed by electrolytic plating under conditions of 0.15-4.0A/cm<2>. A surface of the thin film metal layer 5 of which on the surface excepting a conductive circuit 6 a resist mask is formed, is processed by gold plating and nickel plating 4. After forming the conductive circuit 6 by plating thereon under the same conditions by using copper ion electrolytic, the resist mask is peeled off and the surface is roughened. A laminar material is formed by laminating copper foils thereon via an insulating base material 10, and only the conductive base material is peeled off therefrom. After forming a through hole in this laminar material, its inner wall face and both faces of the laminar material are plated by copper and a resist mask is formed on the part other than the circuit. After solder plating on both faces of the laminar material, it is peeled off and both faces of the laminar material are etched.

Description

Detailed Description of the Invention (Industrial Application Field) The present invention is applicable to various OA applications such as facsimiles and printers.
The present invention relates to a method of manufacturing a recording electrode plate used in a recording section of a device.

(Prior art and its problems) In recent years, in the recording section of facsimiles, printers, etc.
Recording electrode plates used in methods such as electrostatic recording, energized thermal recording, and discharge breakdown recording usually have an electrode section at one end of the substrate in which multiple strip-shaped conductors are arranged parallel to each other at regular intervals. The end of this conductor is connected to the drive circuit. Further, it is desired that the conductor density of this recording electrode plate is about 8 to 12 conductors/conductor.

Conventionally, as a method of manufacturing such a recording electrode plate, for example, a method of etching a copper-clad laminate to form a desired pattern is known. Specifically, a resist mask is formed on the surface of a copper-clad It layer board, and then etching is performed to form a conductor circuit with a predetermined linear density. However, in copper-clad laminates, the thickness of copper foil is usually 30 μm.
Because of the thickness, the linear density is at most 5 lines/process.

Also, if a thin copper foil with a thickness of 5 to 18 mm is used, it is certainly possible to form a circuit with a line density of 8 to 12 lines per wet line, but the cross section of the circuit! Since the dots become smaller, a problem arises in that the printing density decreases. Furthermore, there is also the disadvantage that the yield rate is poor because scratches, dents, etc. on the surface of the copper foil that occur during the manufacturing process of the copper-clad laminate may cause disconnection or short-circuiting of circuit parts.

For this reason, instead of the above-mentioned etching method, a so-called method is used in which a circuit is formed by plating only a desired area on a conductive substrate, and then this circuit is transferred to, for example, an insulating base material. , an additive method has been proposed. In principle, this method is useful for forming fine patterns, but in reality, it is difficult to form a plated layer stably, as pinholes occur in the plated layer due to scratches on the surface of the conductive substrate. Furthermore, there are various problems such as transfer defects such as incomplete transfer of the conductor circuit when transferring the conductor circuit to the insulating base material, resulting in a low manufacturing yield and at the same time making it difficult to produce the conductor circuit with a sufficiently satisfactory linear density. The disadvantage is that it is not easy to form.

The present invention has been made to solve the various problems mentioned above, and has the advantage that pinholes etc. do not occur in the conductor circuit part, the transferability is good, the manufacturing yield is high, and the conductor circuit has high density. It is an object of the present invention to provide a method for manufacturing a recording electrode plate that can realize the formation of a circuit reliably and stably.

(Means and effects for solving the problems) In order to achieve the above object, according to the present invention, the surface roughness is 0.08 to 0.
A 23 μm flat conductive base material is used as a cathode, the cathode and the flat anode are spaced apart by an inter-electrode distance of 3 to 30 mm, and the contact speed of the electrolyte to these electrodes is 2.6 to 20 mm.
The electrolyte was forcibly supplied at a current density of 0.15 to 4.0 m/sec. A step of forming a thin metal layer with a thickness of 1 to 5 μm on the conductive base material by electrolytic plating under OA/- conditions, and applying a resist mask to the surface of the formed thin metal layer except for the part where the conductor circuit is to be formed. a step of forming;
A step of forming a plating layer by plating gold or nickel plating after gold plating on the surface of the thin film metal layer on which the resist mask has been formed, and applying an electrolytic solution containing copper ions on this plating layer under the same electrolytic plating conditions as described above. A step of peeling off the resist mask after forming a conductor circuit by electrolytic plating, a step of roughening the surface of the formed conductor circuit, and a step of applying an insulating substrate to the surface of the conductor circuit thus formed. A step of laminating copper foils and heat-pressing them together to form a laminate, a step of peeling only the conductive base material from this laminate, and a step of forming a through hole in this laminate and then peeling the inner wall surface of the through hole and A step of applying copper plating to both sides of the laminate, a step of forming a resist mask on both sides of the laminate except for a desired circuit area, and a step of peeling off the resist mask after applying solder plating to both sides of the laminate. and a step of etching both surfaces of the laminate using the solder plating layer as a mask.

The following three points can be raised as effects of interposing the above-mentioned thin film metal layer between the single plate conductive base material and the conductor circuit.

(1) *A veneer with a conductor circuit with a film metal layer interposed is laminated on an insulating base material, heated under pressure for a predetermined period of time using a press, and separated after solidification and lamination.
Peeling and separation is possible with a peeling strength of g/cm, and transfer lamination without dimensional changes or appearance defects can be easily achieved.

(2) Single plate conductive base material (e.g. stainless steel)
Even if the surface of the base material is thoroughly polished chemically and physically, components in the base material may fall off due to non-metallic inclusions or electrochemical defects inside the base material, or there may be problems between metals. Compounds, segregation, pores, etc. remain, and these defects cannot be economically and completely compensated for. does not occur, therefore the width is 100! A circuit board with a fine pattern of Im or less can be easily and inexpensively produced.

(3) After forming the thin film metal layer and copper circuit on the veneer conductive base material, transfer lamination to the insulating base material is carried out in a heat-press bonding process. During the melting, gelation, and solidification processes, the resin adhesive tends to flow out onto the peripheral surface of the veneer conductive base material, but this thin metal layer spreads to the veneer base material's periphery and spreads onto the surface of the veneer conductive base material. By covering the entire surface, the solidified resin will remain on the surface of the thin metal layer, and the veneer conductive substrate can be easily separated from the boundary (interface) of the thin metal layer in the transfer lamination separation process. It has the advantage that the adhesive does not adhere or adhere to the single-plate conductor as a base material.

Next, the manufacturing process of the recording electrode plate according to the method of the present invention will be explained based on FIGS. , for example, effective dimensions maximum 1220 x 1020
It is made of a plate-like conductive material of an appropriate size in the range of 1 to 10 mm thick and 1 to 10 mm thick, and preferably has chemical resistance and electrolytic corrosion resistance against chemicals used in the plating process. 5U applied
S630 is preferred), nickel plate, titanium or titanium alloy plate, copper or copper alloy plate, etc. A pretreatment process is performed to remove dirt and oxide film from the surface of the conductive base material 2, and to give the surface a desired roughness (Fig. 1(a)).
). The surface of the conductive base material 2 is preferably polished to a roughness in the range of 0.08 to 0.23 μm. This surface roughness of the conductive base material 2 will be formed on the conductive base material 2 in the next step. This influences the adhesion strength of the thin metal layer (thin copper film) 5, the occurrence of pinholes, and even the surface roughness of the thin metal layer 5. In addition, the above-mentioned roughness specified range prevents the thin film metal layer 5 from peeling off during processes such as plating of the protective layer 4 and the conductive circuit 6, which will be described later. In (i)), the adhesion is set so that it can be easily peeled off, and the adhesion of the interface 8 between the conductive base material 2 and the thin metal layer 5, and the thin metal layer 5 and the resist film 7 described later. Interface between 9
(See FIG. 3) The settings are such that there is a difference in the adhesion force between the two surfaces, that is, the adhesion force at the interface 9 is greater than the adhesion force at the interface 8.

When using a stainless steel plate as the conductive base material 2, for example, the conductive base material 2 may be treated with sulfuric acid of 80 to 10 hl/1.
Scale is removed by immersing in a solution at 60-70°C for 10-30 minutes, then washed with water, and then 60-100 m 1 of nitric acid.
/ 12 and 30 g/J2 of acidic ammonium fluoride is added to the solution at room temperature for 10 to 30 minutes to remove the smant. Next, after washing with water, sodium phosphate 20-5
0g/jl! and sodium hydroxide 50g/l, electrolyte temperature: room temperature to 40°C2 current value: 3 to 8
Catching electrolytic degreasing is performed for 1 to 2 minutes under electrolytic conditions of A/drrr.

Although the above-mentioned surface roughening treatment is performed chemically, the surface of the conductive base material 2 may be chemically cleaned and then mechanically roughened by wet sandblasting (liquid honing) or the like. When roughening the surface mechanically, use a rotary cloth polisher with oscillation to perform heavy polishing with a separate cloth, for example, Scotchbrite I-1240, wash with water, and then apply Scotchbrite I-1240 or so. Surface roughness in the range mentioned above (0,013 to 0.2
A hairline finishing process is applied so that the thickness is 3 μm).

When using a nickel plate as the conductive base material 2, for example, 20 to 50 g/j! of sodium phosphate. The electrolyte temperature is:
Perform cathode electrolytic degreasing for 1 to 2 minutes under electrolytic conditions of room temperature to 40'' C1 current value = 3 to 8 A/d nf, and after washing with water,
Hydrogen fluoride 1-10g/Q, solution at 50°C, or
The surface is roughened by immersing it in a solution of 150 Ill/l hydrochloric acid at 50°C for 1 to 10 minutes, followed by washing with water and then washing with warm water at 40 to 60°C.

When using a titanium or titanium alloy plate as the conductive base material 2, for example, 20 to 50 g/l of sodium phosphate.
, Perform alkaline immersion degreasing by immersing in a solution at 50 to 60°C for 3 to 5 minutes. Then, after washing with water, 25X hydrofluoric acid ()
IF)-75% nitric acid (HNO solution) to roughen the surface by chemical etching.

When using a copper or copper alloy plate as the conductive base material 2,
For example, with an electrolyte of sodium phosphate 20-50g/Q, electrolyte temperature: 50-60°C, current value: 3-10A.
/drrT electrolytic degreasing for 30 seconds to 2 minutes. Then, after washing with water, hydrogen fluoride 1 to Log/l,
Pickle in a solution at room temperature or below for 30 seconds to 2 minutes, and then wash with water.

Next, the pretreated conductive base material 2 is used as the cathode 1, and is faced to the anode 14 at a predetermined distance of 3 to 30+ll111, and a thin metal layer 5 is formed on the conductive base material 2 by so-called high-speed plating. Electrolytic deposition (Fig. 1 et al.), and 2nd
(Figure), copper, nickel, etc. are suitable for the thin film metal layer 5, and these thin film metal layers 5 are laminated on the surface of the conductive base material 2 to a thickness of 1 to 5 μm.

The high-speed plating conditions for depositing copper as the thin film metal layer 5 are as follows: The plating solution at 45 to 70°C is placed in a turbulent flow state on the cathode surface, that is, the distance between the electrodes is 3 to 30 mm s.
Liquid contact speed to electrode is 2.6 to 20.0 m/sec
Rotate the cathode electrode so that c or fix it i! The electrolyte is forcibly supplied between the electrodes. At this time, for example, a copper sulfate plating solution, a copper pyrophosphate solution, or the like is used as the plating solution, and a current with a cathode current density of 0.15 to 4 and OA/c+11 is applied, and the deposition rate of the thin metal layer is 25 to 4. 100μm/w
It is desirable to set it so that it is in.

When depositing nickel as thin film metal N5, the high-speed plating conditions are such that the cathode and anode are 300 to 350 mm apart.
A plating solution of 40 to 48°C is supplied between the electrodes and air agitated. At this time, as the plating solution,
For example, nickel sulfate, nickel sulfamate, etc. are used, and a cathode current density of 2.2 to 4 OA/dn (OA/dn) is applied, and the deposition rate of the thin metal layer is 0.8 to 1.5 μm/dn.
It is desirable to set it so that it is a +win.

Note that a nickel-phosphorus alloy can also be used as the thin metal layer 5, and the nickel-phosphorus alloy is deposited on the surface of the conductive base material by electroless plating. In this case, the electroless nickel plating conditions are such that the plating solution is applied at a temperature of 35 to 55°C, and the liquid contact speed on the surface of the conductive base material 2 is 40 to 80-■/sec.
Shake it so that At this time, for example, an electroless nickel solution using hypophosphorous acid or a boron-based reducing agent is used as the plating solution, and the deposition rate of the thin metal layer is 30%.
It is desirable to set the rate to 1 to 2 μm per minute.

The thin film metal layer 5 subjected to high-speed electrolytic plating is electrolytically laminated on the conductive base material 2 having the required surface roughness as described above, so the thin film metal layer 5 adheres to the conductive base material 2 with an appropriate adhesion force. Further, the surface roughness is within a suitable range for obtaining desired adhesion between the resist mask 7 and the thin metal layer 5, which will be described later, by high-speed plating under the above-mentioned plating conditions. That is, in the present invention, the surface roughness of the thin film metal layer 5 can be suitably controlled by combining the conditions of the surface roughness of the conductive base material, the contact speed of the plating solution, and the electrolytic current density. Therefore, the surface of the thin film metal layer 5 laminated by high-speed plating does not require any special surface treatment after plating.

In addition, electrochemical defects exist in the conductive base material 2 made of a stainless steel plate, a nickel plate, etc., and these defects consist of intermetallic compounds, nonmetallic inclusions, segregation, pores, etc. It is mixed and generated during melting, rolling, etc. of stainless steel plates, and cannot be improved by surface treatment of the conductive base material 2 alone. This defect is caused by conductor circuit 6
This causes pinholes to form. The surface of the thin metal layer 5 formed on the surface of the conductive base material 2 is electrochemically smooth, and by forming a conductor circuit 6 to be described later on the thin metal layer 5, the generation of pinholes is prevented. .

A resist mask 7 is formed by a photoresist method, a printing method, etc. on the surface of the thus formed thin film metal layer 5 except for the portion where the conductor circuit 6 is formed (FIG. 1(C), FIG. 3). ). As described above, the resist agent is selected to be one that can make the adhesion of the interface 9 relatively stronger than the adhesion of the interface 8 in combination with the surface roughness of the conductive base material 2 and the thin metal layer 5. Ru. Specifically, a resist layer is formed by laminating a photosensitive resist film or by coating and drying a liquid photosensitive resist.
A resist mask 7 having a desired pattern is formed by exposure and development. Note that if the linear density of the recording electrode portion is low, the resist mask 7 may be formed by, for example, a screen printing method.

Thereafter, a protective layer 4 consisting of a gold plating layer or a gold plating/nickel plating layer is formed under different etching conditions from the thin film metal layer 5 (FIGS. 1(b) and 4). serves as a so-called corrosion-resistant layer for the conductor circuit 6, which will be described later, and as an etching stopper in the final etching step. The methods of gold plating and nickel plating are not particularly limited, and ordinary plating methods can be applied as appropriate.

Next, the conductive base material 2 on which the thin film metal layer 5, resist mask 7, and plating layer 4 have been formed as described above is used as a cathode l, and this is connected to the anode 14 at a predetermined distance (for example, 3 to 3011
m, preferably 11 to 1511 m), and the conductor circuit 6 is electroformed on the thin film metal layer 5 by high-speed plating (Fig. 1(e), Fig. 5). The electrolyte has a metallic copper concentration of 0.20 to 2.0 no.
f/It, preferably 0.35-0.98mo
l/12, and sulfuric acid concentration 50-220g/l
A copper sulfate plating solution containing
ID Hs (product name) 1.5mj! /j! Add by adding. Ordinary plating solutions such as copper pyrophosphate solution may also be used.

In addition, the current density is 0.15 to 4 A/cd, the speed of contact with the electrode is 2.6 to 20 m/sec, and the electrolyte temperature is 45 to 4.
70″c1, preferably 60 to 65°C.

When the plating solution temperature is less than 45° C., the moving speed of copper ions decreases, making it easy to form a polarized layer on the electrode surface, resulting in a decrease in the plating deposition rate. On the other hand, if the liquid temperature exceeds 70° C., the amount of evaporation of the plating liquid 23 increases and the concentration becomes unstable, and equipment restrictions are imposed due to the high liquid temperature.

By setting the current density and the speed of contact with the electrode to the above-described predetermined conditions, the conductor circuit 6 is deposited on the corrosion-resistant plating layer 4 at a deposition rate of 25 to 100 μm per minute,
Copper electroforming can be performed with efficiency 10 to 200 times higher than conventional plating methods, and has extremely significant practical significance. Moreover, the deposited copper particles can be made extremely fine, and the elongation rate of the conductor circuit 6 can be increased to 16 to 25 without impairing the tensile strength.
reach %. This elongation rate is 1.5 to 2 times or more than the elongation rate of a conductor circuit formed by a normal plating method (a value equal to or higher than that of rolled annealed copper foil), making it possible to create an extremely soft copper film. I can do it. Since it has performance equivalent to that of rolled annealed copper foil, it is particularly effective in flexible substrates that require high bendability. Moreover, the surface particles of the generated conductor circuit 6 have an average particle diameter of 3.0 to 7.
．． It can be made extremely fine as 5 μm, and as a result, the protruding precipitates formed in the subsequent surface roughening treatment (electrolytic plating) process can also be made extremely fine. Furthermore, since the conductor circuit 6 is laminated on the protective layer 4 formed on the electrochemically smooth thin film metal layer 5, no pinholes will occur even if the conductor circuit 6 has a thickness of 10 μm or less.

In the copper electroforming process, when the conductor circuit 6 reaches the required thickness (for example, 2 μm to 300 μm), the supply of electricity and the plating solution is stopped, and after washing with water, the process proceeds to the step of removing the resist mask 7 (Fig. 1). (f), FIG. 6), to peel off and remove the resist mask 7, a dissolving solution such as caustic soda is used, and the resist mask 7 is dissolved and removed by immersing it in this dissolving solution for 30 to 60 seconds. Wash with water and dry.

Subsequently, roughening electrolytic plating is performed to roughen the conductor circuit 6 (FIG. 1 (8)). The electrolytic conditions in this roughening electrolytic plating process are such that the current density is 0.25 to 0.8.
5A/c+a, the distance between the electrodes is 26 to 50 m, and the speed at which the electrolyte contacts the electrodes is 0.6 to 1.5 s/sec). The electrolytic solution is not particularly limited, but for example, copper sulfate (CuS01.5 th
o): 80=150g/l, sulfuric acid (HgSO4)
:40-80g/l, and potassium nitrate (KN(h)
: Use a mixed solution etc. consisting of 25-50g/It.

Through this surface roughening treatment, protruding precipitates are formed on the rough surface of the conductor circuit 6, and the average particle size of the protruding precipitates is 1.
~5 μm, and the adhesion to the insulating base material 10 described later is extremely good.

Furthermore, if the surface of the conductor circuit 6 is further subjected to chromate treatment after the above-mentioned surface roughening treatment, the affinity between the copper and the resin or adhesive in the insulating base material is increased, and not only the peeling strength but also the heat resistance of the conductor circuit is improved. There is an advantage that (for example, soldering heat resistance) is also improved by about 15%. Specifically, this chromate treatment is performed by immersing the product in a potassium dichromate solution having a concentration of 0.7 to 12 g/l for 5 to 45 seconds at room temperature, or by performing chromate treatment using a commercially available electrolytic chromate treatment solution.

Next, the protection N4 and conductor circuit 6 formed on the conductive base material 2 via the thin film metal layer 5 are laminated on the insulating base material 10 together with the thin film metal N5 and the conductive base material 2, and the insulating base material A W4 foil 3 is laminated on the other side of the IO, and these are heat-pressed together using a hot press (see Fig. 1).
5), Figure 7). The insulating base material 10 may be either an organic material or an inorganic material, such as glass,
Materials such as epoxy resin, phenol resin, polyimide resin, polyester resin, and aramid resin can be used. Alternatively, a material insulated by coating the surface of a conductive material such as iron or aluminum with enamel and performing an alumite treatment to oxidize the aluminum surface may be used. Generally, glass cloth or the like is impregnated with epoxy resin, and semi-cured Ml(B
The conductor circuit 6 is heated and pressurized so that it is immersed in the prepreg (stage) (the state shown in FIG. 6), and is bonded thereto.

In this transfer process, the conductor circuit 6 is transferred to the thick conductive base material 2.
And all together vI! , is laminated on the edge base material 10 and bonded under heat and pressure, so that the conductive circuit 6 is transferred while being held on the conductive base material 2, and dimensional stability is ensured. Further, since the conductive base material 2 also serves as a transfer jig during transfer, no special jig is required.Furthermore, the thin film metal N5 is interposed between the conductive circuit 6 and the conductive base material 2, and the thin film metal layer 5 Since the conductor circuit 6 and the conductor circuit 6 are bonded with strong adhesion, the conductor circuit 6 does not shift or move during transfer (so-called swinging), and has good dimensional stability. It is also applicable to density circuits (for example, pattern width of several μm
- several tens of micrometers can be achieved). Furthermore, even if there is a pinhole in the conductor circuit 6, since the thin film metal layer 5 and the protective layer 4 are interposed in close contact between the conductor circuit 6 and the conductive base material 2, the adhesive etc. will not cause the pinhole. It does not pass through and be exposed to the surface of the conductor circuit 6.

Next, after heating and solidifying the insulating base material 10, the conductive TL base material 2 is peeled off from the conductor circuit 6, protective layer 4, and thin film metal 115 transferred to the insulating base material 10 (FIG. 1 (1), Figure 8)
. At this time, the adhesion force between the thin film metal N5 and the conductor circuit 6 is greater than the adhesion force between the conductive base material 2 and the thin film metal layer 5, and the adhesion force between the conductive base material 2 and the thin film metal layer N5 is greater. Since the adhesion between the conductor circuit 6 and the insulating base material 10 is greater than the adhesion between The film gold metal 115, the insulation layer 4, and the conductor circuit 6 are in close contact with each other.

Since the thin metal layer 5 is interposed between the conductive base material 2 and the insulating base material 10, the adhesive of the insulating base material 10 does not directly adhere to the conductive base material 2, and separation occurs between the conductive base material 2 and the conductive base material 2. Thin film gold i-layer 5
Since the conductor is generated between 70 and 120 g/CM, the conductive base material 2 can be easily peeled off with a peeling strength of 70 to 120 g/CM, no uneven force is applied to the conductive circuit 6, and dimensional stability during transfer is maintained even at this time. Secured.

Next, a through hole 101 is formed for connecting between the conductor circuit 6 and the copper foil 3 laminated on both sides of the insulating base material 10 (FIG. 1 (j), FIG. 9). This through hole forming step For example, a conventional method such as cutting using a drill or the like can be applied. Thereafter, a copper layer 102 is formed by, for example, through-hole plating copper on the inner wall surface 101a of the through-hole 101, the conductor circuit 6, and the entire surface of the copper foil 3 (FIGS. 1(G) and 10). Specifically, this step can be performed in combination with electrolytic copper plating or electroless copper plating.

Next, the above through hole 10 on lEl, Ft 102
A resist mask 103 is formed on the inner wall surface 101a of 1, the peripheral edge of the opening of the through hole 101, and the lower surface of the laminate except for the circuit forming area (FIG. 1(+), FIG. 11). This step can be performed in the same manner as described in the step of FIG. 1(C) above.

After that, solder plating is applied to the area where the resist mask 103 is not formed to form a solder plating layer 104 (FIG. 1(e)), and then the resist mask 103 is peeled off (FIG. 1(n)). , Figure 12).

Finally, both sides of the laminate are etched using the solder plating layer 104 as an etching resist to complete the recording electrode plate (FIG. 1(0), FIG. 13).This etching process does not corrode the solder plating 1104. copper layer 102
, I Demetallization 1115 and copper foil 3 can be etched by wet etching using an etching solution capable of etching, for example, a mixed aqueous solution of chromic acid and sulfuric acid. In this step, on the top surface of the laminate, a protective layer 4 made of gold or a gold/nickel plating layer whose etching conditions are different from that of the thin metal layer is formed on the thin metal N5, so the etching is performed on this protective layer. Stop at 4. Therefore, pattern breakage due to overetching does not occur, and the line density of the conductive circuit can be increased.

14 to 17 show an example of a plating device that performs horizontal high-speed plating in the steps shown in FIG. 1 Q: 1) and (e). A plate-shaped insoluble anode 14 is installed, and the cathode 1 is fixed so as to face this anode 14 in parallel. As shown in FIGS. 14 to 16, the insoluble anode 14 is made up of two copper plates 14a and 14b that are polymerized in order to pass a large current, and lead 14c is coated over the entire surface of these plates with a thickness of 2 to 10 m.
m, preferably within the range of 3 to 7 ma+, and is uniformly coated with an acetylene torch or the like. The lead coating 14c typically uses a lead alloy containing 93% lead and 7% tin. When the distance between the electrodes becomes uneven by 100 μm, the electroformed copper film becomes 35
Variations of several μm occur in μm copper, and high current density (0,8
When used for a long time (more than 1000 hours) at a temperature of 1.2 A/CTI), the variation in film thickness becomes even larger due to partial electrolytic consumption of the electrode. Therefore, it is necessary to maintain the distance between the electrodes by reworking and correcting the electrodes. Instead of lead-coated electrodes, fine powders of platinum, palladium, etc. are made into a paste on a titanium plate using a thermally depolymerizable resin, and this is evenly applied to the roughened surface of the titanium plate and baked at 700 to 800℃. By using this titanium plate anode, which can be used as an insoluble anode 14, electrolytic consumption is extremely low.
There is no need to rework or correct the electrode for a long time (more than 1000 hours).

In the thin film metal layer forming step of FIG. 1(b), the polished surface of the conductive base material 2 polished in step (a) of the cathode 1 is as shown in FIG.
In the conductor circuit electroforming step e), the surface of the conductive base material 2 on which the thin film metal layer 5 and the resist mask 7 are formed is placed on the anode 14.
The mounting is fixed with opposite sides.

The distance between the cathode 1 and the insoluble anode 14 is set to the optimum distance depending on the process of forming the thin film metal N5 and the electroforming process of the conductive circuit 6, respectively.

One end of a nozzle 15 for pumping the plating solution 23 at high speed is connected to the inlet side of the gap 13 between the cathode 1 and the insoluble anode 14.
As shown in Figure 3, the nozzle 15 is opened to face substantially the entire width of the insoluble anode 14, and the other end of the nozzle 15 is connected to the pump 1 through a conduit 16.
7 is connected. The pump 7 is further connected to a plating solution storage tank (not shown) via a conduit (not shown).

The outlet side of the cavity 13 (the insoluble anode 1 provided with the nozzle 15)
4), a drain port 18 is opened over substantially the entire width of the insoluble anode 14, and this drain port 18 is connected to a conduit 19.
It is connected to the plating solution storage tank via. and,
The cross-sectional shape of the nozzle 15 and the drain port 18 in the flow direction changes smoothly so that the plating solution 23 can flow through the gap 13 with a uniform velocity distribution. are doing. The plating solution 23 discharged from the pump 17 sequentially passes through the conduit 16, the nozzle 15, the gap 13 between the cathode 1 and the insoluble anode 14, the drain port 18, and the conduit 19, and is returned to the plating solution storage tank. It is again continuously circulated by the pump 17 along the above-mentioned path.

When the plating solution 23 is supplied from the nozzle 15 to the interelectrode gap 13 at the above-described suitable plating solution speed, the plating solution flow becomes turbulent near the surface of the cathode 1, and the metal ion concentration near the electrode surface becomes extremely high. It becomes possible to grow the plated film at high speed while preventing the growth of the polarized layer from decreasing.

In the plating process in the present invention, a cathode 1 and an insoluble anode 1
4, the required high current as described above is supplied via a power supply plate 20 made of copper, graphite, lead, etc., which has chemical resistance and high conductivity, an anode power cable 21, and a cathode power cable 22. Therefore, a copper film can be electrolytically deposited on the surface of the cathode 1 facing the insoluble anode 14 and the portion thereof not masked by the non-conductive resist mask 7 at a deposition rate of about 25 to 100 μm per minute.

In addition, in the manufacturing method of the present invention, the high-speed plating apparatus used is not limited to the above-mentioned horizontal type, and for example, a vertical type, a rotary type, etc. can be used as appropriate.

(Example) Next, the present invention will be explained in detail.

(Leaving space below) Table 1 shows the evaluation test results of the recording electrode plates produced by the method of the present invention and the comparative method, including the surface roughness of the conductive substrate 2, the electrolytic conditions of the thin metal layer 5, and the conditions of the conductor circuit 6. The electrolytic conditions and the roughening treatment conditions of the conductor circuit 6 were varied to improve transferability, peeling strength between the conductor circuit 6 and the insulating base material 10, and the conductor circuit 6.
The test conditions other than those shown in Table 1 were the same for all test circuit boards, and they are as follows. Note that the resist mask was dissolved and removed prior to the surface roughening treatment of the conductor circuit.

Special base: Material: Stainless steel veneer with hardening treatment (SUS630), Surface treatment: Polished to the roughness shown in Table 1 using a rotary cloth polishing device with an oscillation gun, 1 ■ Fish member 1 : Material t: Copper thin film (deposited on the surface of the electric base material with a film thickness of 3 μm) Electrolytic conditions: electrode gap gllfmm, sulfur #18 (Ig/
1 using copper sulfate plating solution: Thickness 1 to 2 μm ■ Body plate 1: Electrolysis conditions: electrode distance 11 mm, sulfuric acid 180 g/ff
Use of copper sulfate plating solution of i, deposited film thickness 35 μm (however, 9 μm in Comparative Example 3), Nisura plating with *ri* process, electrolytic conditions: sulfur r11m 100g/l! , sulfur 11150
g/A, a mixed solution consisting of potassium nitrate 30 g/N was used, and the deposited film thickness was 3 μm.

■IJ: Material f Niglass epoxy C-10';
/L/, hole diameter 0.8mm through-hole plating: thickness 2
In Table 1, in Examples 1 to 3 to which the method of the present invention was applied, the surface roughness of the conductive substrate (veneer) 2, the thin film Electrolytic conditions for metal layer 5, electrolytic conditions for conductor circuit 6, and conductor circuit 6
The surface roughening treatment conditions are all within the condition range prescribed by the present invention, and the transferability, peeling strength between the conductor circuit 6 and the insulating base material 10, and elongation rate of the conductor circuit 6 are all good, and the overall The evaluation is also good (0).

On the other hand, in Comparative Example 1 in which the surface roughness of the conductive substrate (veneer) 2 is outside the lower limit defined by the method of the present invention, the thin metal layer peels off from the conductive substrate (veneer) 2 during the formation process. In Comparative Example 2, which exceeds the upper limit due to early peeling, the adhesion strength between the conductive base material (single plate) 2 and the thin film metal layer 5 is high (peeling value 310 g/cm), and the thin film metal layer 5 partially peels off during the transfer process. Layer 5 remains on the conductive base material 2 side, causing circuit misalignment. Moreover, if the surface roughness of the conductive base material 2 is large, many pinholes are generated in the thin film metal layer 2, and when the insulating base material 10 is laminated, the pinholes get into the pinholes formed in the resist mask removed part of the thin film metal layer. Since the adhesive of the insulating base material adheres to the surface of the conductive base material 2, the insulating base material 10 and the conductive base material 2 come into close contact with each other, and transferability is inhibited. In addition, when there were one or more pinholes with a diameter of 100 μm or less per dn, it was determined that a large number of pinholes were generated.

If the resist mask 7 and conductor circuit 6 are formed directly on the conductive base material 2 without forming the thin metal layer 5 on the surface of the conductive base material 2, pinholes will occur in the conductor circuit (film thickness 9 μm) 6 and the resist When the mask 7 and the conductor circuit 6 are integrally transferred, the adhesion strength between the resist mask 7 and the conductive base material 2 is large, so the resist mask 7 remains on the surface of the conductive base material 2 during transfer, and When transferring the conductor circuit 6 after removing the resist mask 7, the insulating base material 10 and the conductive base material 2 will stick together with the adhesive, making it difficult to peel off the conductive base material 2, and in any case, the transfer will not be possible. (Comparative Example 3).

If the contact speed of the electrolyte during electrolysis of the conductor circuit 6 exceeds the upper limit specified by the method of the present invention, the resist mask 7 will peel off during electrolysis (Comparative Example 4), and the current density exceeds the upper limit specified by the method of the present invention. If it exceeds 8, nodular plating, so-called "plating burn" will occur, and the elongation rate of the formed conductor circuit 6 will also be 8.
%, and cannot be used for flexible substrate circuits (Comparative Example 5).

If the current density during electrolytic plating in the roughening treatment of the surface of the conductor circuit 6 is below the lower limit specified by the method of the present invention, the plated surface will be shiny and no roughened plating will be formed (
Comparative Example 6), the conductor circuit 6 with insufficient surface roughening was replaced with the insulating base material 1.
0, the beering value between the conductor circuit 6 and the insulating base material 10 is 0.7 kg/am, resulting in insufficient adhesion strength.

Comparative Examples 1 to 1 in which any of the surface roughness of the conductive base material 2, the electrolytic conditions of the thin film metal layer 5, the electrolytic conditions of the conductive circuit 6, and the roughened surface treatment conditions of the conductive circuit 6 are out of the condition range prescribed by the present invention. No. 6 has the above-mentioned disadvantages, and the overall evaluation is poor (x).

(Effects of the Invention) As described in detail above, according to the method for manufacturing a recording electrode plate of the present invention, a flat conductive substrate having a surface roughness of 0.08 to 0.23 μm is used as a cathode, The distance between the anode and the electrode is 3
The electrodes were separated by ~30 mm, and the electrolyte was forcibly supplied so that the contact speed of the electrolyte to these electrodes was 2.6 to 20.0 msec, and the current density was 0.15 to 4.0 msec.
A step of forming a thin metal layer with a thickness of 1 to 5 μm on the conductive base material by electrolytic plating under the conditions of 0A/c, and applying a resist on the surface of the formed thin metal layer except for the part where the conductor circuit is to be formed. a step of forming a mask; a step of forming a plating layer by plating gold or nickel plating after gold plating on the surface of the thin film metal layer on which the resist mask is formed;
Electrolytic plating is performed on this plating layer using an electrolytic solution containing copper ions under the same electrolytic plating conditions as described above to form a conductor circuit, and then the resist mask is peeled off, and the surface of the formed conductor circuit is roughened. A step of applying surface treatment,
A step of laminating W4 foil on the surface of the conductor circuit thus formed via an insulating base material and heat-pressing them together to form a laminate;
a step of peeling only the conductive base material from this laminate; a step of forming a through hole in this laminate and then applying copper plating to the inner wall surface of the through hole and both sides of the laminate;
A step of forming a resist mask on both sides of the laminate except for the desired circuit area, a step of peeling off the resist mask after applying solder plating to both sides of the laminate, and a step of peeling off the resist mask using the solder plating layer as a mask. Since it consists of a step of etching both sides, the time required for plating thin film metal layers and conductor circuits is significantly shortened compared to conventional plating methods, productivity is high, and the process is simplified. The equipment required for a conductor circuit board manufacturing apparatus for carrying out the process and its installation area can be reduced.

In addition, since a thin metal layer is interposed between the conductor circuit and the conductive base material, defects such as pinholes are less likely to occur in the conductor circuit formed by plating, and it is also easy to transfer and has excellent dimensional stability. There is an advantage.

Furthermore, since the conductor circuit is protected by a protective layer made of gold or gold/nickel plating, disconnections due to overetching are prevented, and even fine circuit patterns can be stably manufactured, improving yield and quality. It has various excellent effects.

Further, according to the manufacturing method of the present invention, by using high-speed electrolytic plating, there is an advantage that a conductor circuit having high tensile strength and an elongation rate equal to or higher than that of annealed copper can be formed.

[Brief explanation of drawings]

FIG. 1 is a process flowchart showing the manufacturing procedure of the recording electrode plate manufacturing method according to the present invention, and FIGS. 2 to 13 are
A cross-sectional configuration diagram of a conductor circuit board in the process shown in FIG. 1, FIG. 14 is a front sectional view showing the configuration of a horizontal type high-speed plating device, FIG. 15 is a side view of the same high-speed plating device, and FIG. 16 is a 15 is a sectional view taken along the XVI-XVI arrow line shown in FIG. 15, and FIG. 17 is a sectional view taken along the X■-X■ arrow line shown in FIG. 16. DESCRIPTION OF SYMBOLS 1... Cathode, 2... Conductive base material, 4... Protective layer (gold or gold/nickel plating dark), 5... Thin film metal layer, 6
...Conductor circuit, 7...Resist mask, 10.10
a... Insulating substrate, 11... Horizontal type high speed plating device, 14... Insoluble anode, 101... Through hole.

Claims (4)

[Claims] (1) A flat conductive base material with a surface roughness of 0.08 to 0.23 μm is used as a cathode, and the cathode and flat anode are separated from each other at a distance of 3 to 3.
The electrodes were separated by 30 mm, and the electrolyte was forcibly supplied so that the contact speed of the electrolyte to these electrodes was 2.6 to 20.0 m/sec, and the current density was 0.15 to 4.0 m/sec.
A step of electroplating under the conditions of A/cm^2 to form a thin metal layer with a thickness of 1 to 5 μm on the conductive base material, and a step of forming a thin metal layer on the surface of the formed thin metal layer except for the part where the conductor circuit is to be formed. A step of forming a resist mask, a step of forming a plating layer by plating gold or nickel plating after gold plating on the surface of the thin metal layer on which the resist mask is formed, and using an electrolytic solution containing copper ions on this plating layer. a step of performing electrolytic plating under the same conditions as the electrolytic plating conditions to form a conductor circuit, and then peeling off the resist mask; a step of roughening the surface of the formed conductor circuit; A step of laminating copper foil on the surface via an insulating base material and heat-pressing them together to form a laminate;
a step of peeling only the conductive base material from this laminate; a step of forming a through hole in this laminate and then applying copper plating to the inner wall surface of the through hole and both sides of the laminate;
A step of forming a resist mask on both sides of the laminate except for the desired circuit area, a step of peeling off the resist mask after applying solder plating to both sides of the laminate, and a step of peeling off the resist mask using the solder plating layer as a mask. A method for manufacturing a recording electrode plate, comprising the step of etching both sides. (2) Using an acidic electrolyte containing copper ions and nitrate ions on the surface of the conductor circuit, the current density is 0.25 to 0.8.
5A/cm^2) Contact speed of the acidic electrolyte with respect to the electrode: 0.6 to 1.5 m/sec, inter-electrode distance: 26
Claim 1, characterized in that the surface roughening treatment is performed under conditions of ~50 mm until the deposited film thickness becomes 2 to 5 μm.
A method for manufacturing a conductive circuit board as described in Section 1. (3) The method for manufacturing a conductive circuit board according to claim 2, further comprising performing a chromate treatment on the surface of the conductive circuit after the surface roughening treatment. (4) The conductor circuit according to any one of claims 1 to 3, characterized in that the cathode and anode are fixed together and the electrolyte is forcibly supplied between these electrodes. Method of manufacturing the board.