JPS63296506A - Temperature compensation circuit - Google Patents

Temperature compensation circuit

Info

Publication number
JPS63296506A
JPS63296506A JP62132555A JP13255587A JPS63296506A JP S63296506 A JPS63296506 A JP S63296506A JP 62132555 A JP62132555 A JP 62132555A JP 13255587 A JP13255587 A JP 13255587A JP S63296506 A JPS63296506 A JP S63296506A
Authority
JP
Japan
Prior art keywords
temperature
voltage
variable attenuator
temperature range
constant voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62132555A
Other languages
Japanese (ja)
Other versions
JP2543079B2 (en
Inventor
Hideo Yoshimune
吉宗 秀郎
Takeshi Ariga
健 有賀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62132555A priority Critical patent/JP2543079B2/en
Publication of JPS63296506A publication Critical patent/JPS63296506A/en
Application granted granted Critical
Publication of JP2543079B2 publication Critical patent/JP2543079B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To make the gain of an amplifier stable in all the temperature range by controlling the variable attenuator at a prescribed temperature range in response to the temperature fluctuation so as to correct the gain fluctuation and giving a constant voltage to the variable attenuator in other temperature range. CONSTITUTION:A constant voltage element 14 such as a Zener diode, a voltage generating circuit including a thermosensing element 11 and a switch circuit 9 are provided, an output voltage of a voltage generating circuit changing in response to the temperature change at a constant temperature range is fed to a variable attenuator 20 and a constant voltage is impressed on the variable attenuator 20 in place of the output voltage at temperatures other than said temperature range. That is, the control voltage fed to the variable attenuator 20 is fixed to a voltage depending on the constant voltage element 14 under a temperature and the voltage in response to the change in the thermosensing element 11 is obtained at temperatures over it, then the gain compensation at a high temperature is made stable and the overcompensation at a low temperature is suppressed.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は広い温度範囲での増幅器の利得を安定にするた
めの温度補償回路に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a temperature compensation circuit for stabilizing the gain of an amplifier over a wide temperature range.

従来の技術 産業機器で特に屋外に設置される機器内に使用されてい
る増幅器は広い温度範囲で安定して動作することが必要
である。この場合、機器のコストをおさえるために、簡
単な構成で実現する事も同時に重要となる。
BACKGROUND OF THE INVENTION Amplifiers used in conventional industrial equipment, especially equipment installed outdoors, are required to operate stably over a wide temperature range. In this case, it is also important to realize a simple configuration in order to reduce the cost of the equipment.

以下図面を参照しながら、上述した従来の増幅器の温度
補償回路の一例について説明する。
An example of the above-mentioned conventional amplifier temperature compensation circuit will be described below with reference to the drawings.

第4図は従来の増幅器の温度補償回路の構成を示すもの
である。二段の増幅器1.2のみの温度特性は通常第6
図に示す通りで、低温では利得が大きくなり、高温では
利得が小さくなる。またその変動量は高温での変動ΔG
Hは低温での変動ΔGLに比べて大きい。
FIG. 4 shows the configuration of a temperature compensation circuit of a conventional amplifier. The temperature characteristics of only the two-stage amplifier 1.2 are normally the 6th
As shown in the figure, the gain increases at low temperatures and decreases at high temperatures. Also, the amount of variation is the variation ΔG at high temperature.
H is large compared to the fluctuation ΔGL at low temperatures.

前述の増幅器1,2の温度変動を補償するために通常P
INダイオード7を用いた可変減衰器を温度により制御
する方式が考えられている。第4図の3は代表的なPI
Nダイオード減衰器である。
In order to compensate for the temperature fluctuations of the amplifiers 1 and 2 mentioned above, P
A method has been considered in which a variable attenuator using an IN diode 7 is controlled by temperature. 3 in Figure 4 is a typical PI
It is an N diode attenuator.

図中の端子8に与える直流電圧によって第6図に示す様
な減衰特性を示す。この特性はある電圧vA以上では減
衰量と電圧が直線的に変化するが、■A以下になると減
衰量が急峻となる特長を通常示す。
Depending on the DC voltage applied to terminal 8 in the figure, the attenuation characteristic as shown in FIG. 6 is exhibited. This characteristic usually exhibits a feature in which the amount of attenuation and the voltage change linearly above a certain voltage vA, but the amount of attenuation becomes steep when the voltage is below ■A.

前述の増幅器1,2の温度変動を補償するためPINダ
イオード減衰器3の減衰量を温度によって変化する電圧
で制御する必要がある。その温度によって電圧の変化を
得るために種々の感温素子があるが、ここでは正特性サ
ーミスタを用いた回路について説明する。正特性サーミ
スタは温度が上れば抵抗値が大きくなる特長がある。
In order to compensate for temperature fluctuations in the amplifiers 1 and 2 mentioned above, it is necessary to control the attenuation amount of the PIN diode attenuator 3 using a voltage that changes depending on the temperature. Although there are various temperature sensing elements for obtaining voltage changes depending on the temperature, a circuit using a positive temperature coefficient thermistor will be described here. Positive temperature coefficient thermistors have the characteristic that their resistance value increases as the temperature rises.

第4図中の6は抵抗、6が正特性サーミスタである。正
特性サーミスタ6が温度により抵抗値が変化するため、
抵抗6と正特性サーミスタ6との接続点4の直流電圧は
第7図に示す様な特性を示す。この接続点4における直
流電圧をPINダイオード減衰器3に加えてその減衰量
を制御し、増幅器1,2の利得が一定になるようにする
6 in FIG. 4 is a resistor, and 6 is a positive characteristic thermistor. Since the resistance value of the positive characteristic thermistor 6 changes depending on the temperature,
The DC voltage at the connection point 4 between the resistor 6 and the positive temperature coefficient thermistor 6 exhibits characteristics as shown in FIG. The DC voltage at this connection point 4 is applied to the PIN diode attenuator 3 to control its attenuation amount so that the gains of the amplifiers 1 and 2 are constant.

発明が解決しようとする問題点 しかしながら前述の構成の素子を用いた温度補償回路で
は、増幅器の高温側と低温側での利得の変化量が異なる
ために、全温度の範囲において増幅器の変化と全く逆特
性の減衰量特性をPINダイオード減衰器とその制御用
温度−電圧変換回路から得る事は非常に困難である。
Problems to be Solved by the Invention However, in a temperature compensation circuit using an element having the above-mentioned configuration, the amount of change in gain on the high temperature side and low temperature side of the amplifier is different, so the change in gain is completely different from the change in the amplifier over the entire temperature range. It is very difficult to obtain an attenuation characteristic with an inverse characteristic from a PIN diode attenuator and its control temperature-voltage conversion circuit.

すなわち、第1図に示した回路構成では、仮りに高温側
だけの利得を補償しようとすれば低温側では補償がきき
すぎてしまい、第8図に示す様な特性になってしまうと
いう問題点を有している。
In other words, with the circuit configuration shown in Figure 1, if you try to compensate for the gain only on the high temperature side, the compensation will be too strong on the low temperature side, resulting in the characteristics shown in Figure 8. have.

本発明は上記問題点に対し、低温側での増幅器に対する
利得の過補償を制限する事により全温度範囲において増
幅器の利得を安定にする補償回路を提供するものである
The present invention solves the above problem by providing a compensation circuit that stabilizes the gain of the amplifier over the entire temperature range by limiting overcompensation of the gain of the amplifier at low temperatures.

問題点を解決するための手段 上記問題点を解決するために本発明の温度補償回路は、
ツェナーダイオード等の定電圧素子、感温素子を含む電
圧発生回路並びにスイッチ回路を設け、ある一定の温度
範囲では温度変化に応じて変化する上記電圧発生回路の
出力電圧を可変減衰器に加え、上記温度範囲以外の温度
では上記出力電圧に代えて定電圧を上記可変減衰器に印
加するようにしたことを特徴とする。
Means for Solving the Problems In order to solve the above problems, the temperature compensation circuit of the present invention has the following features:
A voltage generating circuit including a constant voltage element such as a Zener diode, a temperature sensing element, and a switch circuit are provided, and the output voltage of the voltage generating circuit, which changes according to temperature changes in a certain temperature range, is applied to the variable attenuator. The present invention is characterized in that at temperatures outside the temperature range, a constant voltage is applied to the variable attenuator instead of the output voltage.

作  用 本発明は、スイッチ回路により、PINダイオード減衰
器等の可変減衰器に加える制御電圧をある温度以下では
定電圧素子によって決まる電圧に固定し、それ以上の温
度では感温素子の変化に応じた電圧にするというもので
、高温側での利得補償を従来例の通り安定にすると同時
に、低温側での過補償をおさえる作用を有する。
Function The present invention uses a switch circuit to fix the control voltage applied to a variable attenuator such as a PIN diode attenuator to a voltage determined by a constant voltage element below a certain temperature, and at higher temperatures to adjust the control voltage to a voltage determined by a constant voltage element. This has the effect of stabilizing gain compensation on the high temperature side as in the conventional example, and at the same time suppressing overcompensation on the low temperature side.

実施例 以下本発明の実施例についてM1図を参照に説明する。Example Embodiments of the present invention will be described below with reference to diagram M1.

第1図において、9はツェナーダイオード14を用いた
差動スイッチ回路である。抵抗10と正特性す〜ミスタ
11によって決まる電圧がエミッタ7オロワのトランジ
スタ12と抵抗16によって、又一方抵抗13とツェナ
ーダイオード14によって決まる電圧がエミッタフォロ
ワのトランジスタ16と抵抗1θによフてそれぞれ制御
電圧としてPINダイオード減衰器2oの制御端子17
に加わっている。
In FIG. 1, 9 is a differential switch circuit using a Zener diode 14. The voltage determined by the resistor 10 and the positive characteristic resistor 11 is controlled by the emitter 7 follower transistor 12 and resistor 16, and the voltage determined by the resistor 13 and Zener diode 14 is controlled by the emitter follower transistor 16 and resistor 1θ. Control terminal 17 of the PIN diode attenuator 2o as voltage
Participating in

温度が変化すると正特性サーミスタ11の抵抗値が変化
し、トランジスタ12のベース電圧ハ変化するが、ツェ
ナーダイオード14は温度変動がほとんど無視しつるも
のなのでトランジスタ160ベース電圧は変化しない。
When the temperature changes, the resistance value of the PTC thermistor 11 changes, and the base voltage of the transistor 12 changes, but since the Zener diode 14 is a device whose temperature fluctuations are almost ignored, the base voltage of the transistor 160 does not change.

ツェナーダイオード14の電圧を、増幅器18゜19の
温度特性より適当な温度における適当な減衰量制御電圧
を得る様に選ぶ。
The voltage of the Zener diode 14 is selected so as to obtain an appropriate attenuation control voltage at an appropriate temperature based on the temperature characteristics of the amplifiers 18 and 19.

そうすると、正特性サーミスタ11によって温度変化で
トランジスタ12のベース電圧が変化しても、前述のツ
ェナーダイオード14で決まるトランジスタ16のベー
ス電圧以下であれば、制御端子17に出力される制御電
圧は、トランジスタ16、ツェナーダイオード14によ
って決まる電圧となる。
Then, even if the base voltage of the transistor 12 changes due to temperature change due to the positive temperature coefficient thermistor 11, as long as the base voltage of the transistor 16 determined by the aforementioned Zener diode 14 is lower than the control voltage output to the control terminal 17, the control voltage output to the control terminal 17 will be 16, the voltage is determined by the Zener diode 14.

一方、温度が変わりトランジスタ12のベース電圧が、
トランジスタ16のベース電圧よりも高くなれば、端子
17の制御電圧はトランジスタ12、正竺性サーミスタ
11によって決まる電圧、すなわち温度によって変化す
る電圧となる。この様子を示したのが第2図の温度−電
圧特性である。
On the other hand, as the temperature changes, the base voltage of the transistor 12 becomes
If it becomes higher than the base voltage of the transistor 16, the control voltage of the terminal 17 becomes a voltage determined by the transistor 12 and the polarity thermistor 11, that is, a voltage that changes depending on the temperature. This situation is shown in the temperature-voltage characteristics shown in FIG.

このように増幅器18.19の利得変動が大きい高温側
での温度範囲では、感温素子11と減衰器20による補
償回路を温度で変化させて利得変動を補償し、一方利得
変動が少なくかつ減衰器2゜の特性が急峻に変化する低
温側での温度範囲では、減衰器2oに加える制御電圧を
ツェナーダイオード14によって固定にして減衰量を一
定にして、第8図に示すように増幅器自身のもつ微小な
利得の増加のみに抑えることができる。この様にして、
ツェナーダイオード14とトランジスタ12.15の2
石という非常に簡単な構成で広い温度にわたる利得補償
回路を実現することができる。
In this way, in the high temperature range where the gain fluctuations of the amplifiers 18 and 19 are large, the compensation circuit consisting of the temperature sensing element 11 and the attenuator 20 is changed with temperature to compensate for the gain fluctuation, while the gain fluctuation is small and the attenuation is low. In the low temperature range where the characteristics of the amplifier 2o change sharply, the control voltage applied to the attenuator 2o is fixed by the Zener diode 14 to keep the amount of attenuation constant, and as shown in FIG. The gain can be suppressed to only a small increase. In this way,
Zener diode 14 and transistor 12.15 2
It is possible to realize a gain compensation circuit over a wide temperature range with a very simple structure of a stone.

発明の効果 以上のように本発明によれば、電圧制御による可変減衰
器によって増幅器の利得変動を補正する回路において、
一定の温度範囲においては上記可変減衰器を温度変動に
応じて制御して利得の変動を補正し、それ以外の温度範
囲においては一定の電圧を可変減衰器に与えることによ
り、補正のかかり過ぎを抑えることができ、広い温度範
囲において増幅器の利得を安定にすることができるもの
である。
Effects of the Invention As described above, according to the present invention, in a circuit that corrects gain fluctuations of an amplifier using a voltage-controlled variable attenuator,
In a certain temperature range, the variable attenuator is controlled according to temperature fluctuations to compensate for gain fluctuations, and in other temperature ranges, a constant voltage is applied to the variable attenuator to prevent excessive compensation. This makes it possible to stabilize the gain of the amplifier over a wide temperature range.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例における温度補償回路の回路
図、第2図は第1図におけるスイッチ回路の温度−電圧
変換特性図、第3図は第1図による温度補償特性図、第
4図は従来の温度補償回路の回路図、第5図は増幅器の
温度−利得特性図、第6図は第4図におけるPINダイ
オード減衰器の特性図、第7図は第4図の温度−電圧変
換特性図、第8図は第4図の温度特性図である。 9・・・・・・スイッチ回路、10,13.16・・・
・・・抵抗、11・・・・・・感温素子(正特性サーミ
スタ)、12.15・・・・・・差動増幅回路を構成す
るトランジスタ、14・・・・・・ツェナーダイオード
、18.19・・・・・・増幅器、20・・・・・・可
変減衰器。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名7−
軟→   派 区              区 I/)(コ 派             法 区       区 一 O e″       派
FIG. 1 is a circuit diagram of a temperature compensation circuit according to an embodiment of the present invention, FIG. 2 is a temperature-voltage conversion characteristic diagram of the switch circuit in FIG. 1, and FIG. 3 is a temperature compensation characteristic diagram according to FIG. Figure 4 is a circuit diagram of a conventional temperature compensation circuit, Figure 5 is a temperature-gain characteristic diagram of an amplifier, Figure 6 is a characteristic diagram of the PIN diode attenuator in Figure 4, and Figure 7 is a temperature-gain characteristic diagram of the amplifier. The voltage conversion characteristic diagram, FIG. 8, is the temperature characteristic diagram of FIG. 4. 9...Switch circuit, 10,13.16...
... Resistor, 11 ... Temperature sensing element (positive temperature thermistor), 12.15 ... Transistor constituting the differential amplifier circuit, 14 ... Zener diode, 18 .19...Amplifier, 20...Variable attenuator. Name of agent: Patent attorney Toshio Nakao and 1 other person7-
Soft → Faku Ku Ku I/) (Ko Ha Ho Ku Ku I O e″ faction

Claims (2)

【特許請求の範囲】[Claims] (1)温度変化による増幅器の利得変動を補正するため
の電圧制御形の可変減衰器と、感温素子を含み、温度変
化に応じて変化する電圧を出力する可変電圧発生手段と
、温度変化にかかわらず常に一定の電圧を発生する定電
圧発生手段と、ある一定の温度範囲においては上記可変
電圧発生手段の出力電圧を上記可変減衰器に印加し、上
記温度範囲以外の温度では可変電圧発生手段の出力電圧
に代えて上記定電圧発生手段の一定の電圧を上記可変減
衰器に印加する切換回路とを有する温度補償回路。
(1) A voltage-controlled variable attenuator for correcting amplifier gain fluctuations due to temperature changes, a variable voltage generating means that includes a temperature sensing element and outputs a voltage that changes according to temperature changes, and constant voltage generating means that always generates a constant voltage regardless of the temperature; and variable voltage generating means that applies the output voltage of the variable voltage generating means to the variable attenuator within a certain temperature range, and at temperatures outside the above temperature range. and a switching circuit for applying a constant voltage of the constant voltage generating means to the variable attenuator instead of the output voltage of the temperature compensation circuit.
(2)任意の温度より高い高温側では可変電圧発生手段
の出力電圧を可変減衰器に加え、上記温度より低い低温
側では定電圧発生手段の定電圧出力を可変減衰器に加え
るようにした特許請求の範囲第1項記載の温度補償回路
(2) A patent that applies the output voltage of the variable voltage generating means to the variable attenuator on the high temperature side higher than a given temperature, and applies the constant voltage output of the constant voltage generating means to the variable attenuator on the low temperature side lower than the above temperature. A temperature compensation circuit according to claim 1.
JP62132555A 1987-05-28 1987-05-28 Amplifier temperature compensation circuit Expired - Lifetime JP2543079B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62132555A JP2543079B2 (en) 1987-05-28 1987-05-28 Amplifier temperature compensation circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62132555A JP2543079B2 (en) 1987-05-28 1987-05-28 Amplifier temperature compensation circuit

Publications (2)

Publication Number Publication Date
JPS63296506A true JPS63296506A (en) 1988-12-02
JP2543079B2 JP2543079B2 (en) 1996-10-16

Family

ID=15084025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62132555A Expired - Lifetime JP2543079B2 (en) 1987-05-28 1987-05-28 Amplifier temperature compensation circuit

Country Status (1)

Country Link
JP (1) JP2543079B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59171413U (en) * 1983-05-02 1984-11-16 日本航空電子工業株式会社 Temperature compensation signal generation circuit
JPS6019310A (en) * 1983-07-13 1985-01-31 Nec Corp High frequency power control circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59171413U (en) * 1983-05-02 1984-11-16 日本航空電子工業株式会社 Temperature compensation signal generation circuit
JPS6019310A (en) * 1983-07-13 1985-01-31 Nec Corp High frequency power control circuit

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Publication number Publication date
JP2543079B2 (en) 1996-10-16

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