JP2706146B2 - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

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Publication number
JP2706146B2
JP2706146B2 JP1213658A JP21365889A JP2706146B2 JP 2706146 B2 JP2706146 B2 JP 2706146B2 JP 1213658 A JP1213658 A JP 1213658A JP 21365889 A JP21365889 A JP 21365889A JP 2706146 B2 JP2706146 B2 JP 2706146B2
Authority
JP
Japan
Prior art keywords
transistor
constant current
temperature
semiconductor integrated
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1213658A
Other languages
Japanese (ja)
Other versions
JPH0377412A (en
Inventor
秀樹 三宅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1213658A priority Critical patent/JP2706146B2/en
Publication of JPH0377412A publication Critical patent/JPH0377412A/en
Application granted granted Critical
Publication of JP2706146B2 publication Critical patent/JP2706146B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は半導体集積回路に関する。Description: TECHNICAL FIELD The present invention relates to a semiconductor integrated circuit.

〔従来の技術〕[Conventional technology]

第2図は、従来の基準定電流源回路の回路図である。 FIG. 2 is a circuit diagram of a conventional reference constant current source circuit.

この基準定電流源の出力電流はトランジスタQ1のコレ
クタ電流とトランジスタQ2のコレクタ電流の和になる。
The output current of the reference constant current source is the sum of the collector current and the collector current of the transistor Q 2 of the transistor Q 1.

トランジスタQ1のコレクタ電流は、トランジスタQ1
ベースが温度依存性の無い定電流源1の中のトランジス
タとカレントミラー回路を構成している為、温度の依存
性が無い。すなわち、電流値の温度係数は零である。
The collector current of the transistor Q 1 is, since the base of the transistor Q 1 is constitutes a transistor and a current mirror circuit in the temperature dependence no constant current source 1, there is no dependence of the temperature. That is, the temperature coefficient of the current value is zero.

また、トランジスタQ2のコレクタ電流は、トランジス
タQ3のベースエミッタ間の電圧を抵抗R2で割った値にほ
ぼ等しくなるので、トランジスタのベースエミッタ間電
圧と等しい温度依存性を持つ。すなわち、電流値の温度
係数は常温で約−3000ppm/℃である。
The collector current of the transistor Q 2 is, since substantially equal to a value obtained by dividing the voltage between the base and the emitter of the transistor Q 3 by the resistor R 2, with the temperature dependence is equal to the base-emitter voltage of the transistor. That is, the temperature coefficient of the current value is about −3000 ppm / ° C. at room temperature.

以上より、この回路では抵抗R1とR2の値を適当に選
び、トランジスタQ1のコレクタ電流とトランジスタQ2
コレクタ電流の割り合いを適当な値にすることにより、
0〜−3000ppm/℃の範囲の任意の温度係数を持った出力
電流を得ることができる。
From the above, in this circuit, by appropriately selecting the values of the resistors R 1 and R 2 and setting the ratio between the collector current of the transistor Q 1 and the collector current of the transistor Q 2 to an appropriate value,
An output current having an arbitrary temperature coefficient in the range of 0 to -3000 ppm / ° C can be obtained.

第3図は従来の電圧制御発振回路の回路図である。 FIG. 3 is a circuit diagram of a conventional voltage controlled oscillation circuit.

この回路はトランジスタQ4とQ5から成る増幅段で構成
され、この増幅段はトランジスタQ8と電流源7、及びト
ランジスタQ9と電流源8から成る緩衝増幅器を通して交
差接合されている。この増幅段は端子間電圧が抵抗R5
端子電位とトランジスタQ6とQ7のベースエミッタ間電圧
によって決定される電圧により、クランプされるトラン
ジスタQ10と抵抗R3及びR4から成る負荷を持つ。トラン
ジスタQ4及びQ5のエミッタは、定電流源5及び6により
バイアスされ、タイミングコンデンサCを通して結合さ
れている。
This circuit is constituted by the amplifier stage consisting of transistors Q 4 and Q 5, the amplifier stage is cross bonded through a buffer amplifier comprising transistors Q 8 and a current source 7 and the transistor Q 9 and the current source 8. The voltage amplifier stage of the inter-terminal voltage is determined by the base-emitter voltage of the terminal potential and the transistor Q 6 and Q 7 of the resistor R 5, the load comprising a transistor Q 10 which is clamped a resistor R 3 and R 4 Have. The emitter of the transistor Q 4 and Q 5 is biased by the constant current source 5 and 6 are coupled through a timing capacitor C.

この電圧制御発振回路の発振周波数fは、対となる定
電流源5と6、定電流源7と8、トランジスタQ4とQ5
トランジスタQ6とQ7、トランジスタQ8とQ9、及び抵抗R3
とR4のそれぞれの特性が全て等しければ、 (1)式となる。ここで、I1は定電流源5及び6の電流
値、CはコンデンサCの容量、VBEはトランジスタQ6
びQ7のベースエミッタ間電圧である。
The oscillation frequency f of the voltage controlled oscillator circuit includes paired constant current source 5 and 6, a constant current source 7 8, the transistor Q 4 and Q 5,
Transistor Q 6 and Q 7, the transistor Q 8 and Q 9, and a resistor R 3
If all the characteristics of R and R 4 are equal, Equation (1) is obtained. Here, I 1 is the current value of the constant current source 5 and 6, C is the capacitance of the capacitor C, the V BE is the base-emitter voltage of the transistor Q 6 and Q 7.

トランジスタQ10と抵抗R3とR4は温度変化に伴なって
トランジスタQ6及びQ7に流れるエミッタ電流を変化させ
ることによって、前(1)式のトランジスタQ6及びQ7
ベースエミッタ間電圧VBEの温度に対する補償を行なっ
て、周波数fの温度特性を改善させる為に設けたもので
ある。
By the transistor Q 10 and the resistor R 3 and R 4 to vary the emitter current flowing through the transistor Q 6 and Q 7 become accompanied by temperature changes, before (1) the base-emitter voltage of the transistor Q 6 and Q 7 It is provided to compensate for the temperature of V BE and improve the temperature characteristics of frequency f.

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

従来の半導体集積回路は基準定電流源に温度特性を持
たせることにより、特定の回路の温度特性を補償するよ
うにされていたので、回路によっては補償の為の計算が
困難であったり、動作条件により最適な補償条件が変化
する場合もあった。
In conventional semiconductor integrated circuits, the reference constant current source is provided with temperature characteristics to compensate for the temperature characteristics of a specific circuit. In some cases, the optimum compensation condition changes depending on the condition.

電圧制御発振回路はその典型的な例で、特に高い周波
数では、温度特性を目標値に設計することは非常に困難
であった。
A voltage controlled oscillator circuit is a typical example, and it is very difficult to design a temperature characteristic to a target value, especially at a high frequency.

この発明は上記のような問題点を解決するためになさ
れたもので、温度特性の設計を容易にするとともに、集
積回路化された後でも、動作条件にあわせて最適な温度
特性が得られる半導体集積回路を得ることを目的とす
る。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and facilitates the design of temperature characteristics, and provides a semiconductor device that can obtain optimum temperature characteristics according to operating conditions even after being integrated. It is intended to obtain an integrated circuit.

〔課題を解決するための手段〕[Means for solving the problem]

この発明に係る半導体集積回路は、出力電流を温度係
数の異なる2種の定電流源の出力の適当な割り合いの加
算で得るようにし、前記2種の定電流源の出力の加算の
割り合いが異なる組み合わせを複数個備え、外部論理記
号により上記複数個の組み合わせの中から任意の組み合
わせを選択できるような構成にするものである。
In the semiconductor integrated circuit according to the present invention, the output current is obtained by adding an appropriate ratio of the outputs of the two constant current sources having different temperature coefficients, and a ratio of the output of the two constant current sources is added. Are provided with a plurality of combinations different from each other, and an arbitrary combination can be selected from the plurality of combinations by an external logic symbol.

また、この発明に係る電圧制御発振回路は、前記半導
体集積回路を基準電流源として用いたことを特徴として
いる。
Further, a voltage-controlled oscillation circuit according to the present invention is characterized in that the semiconductor integrated circuit is used as a reference current source.

〔作用〕[Action]

この発明における半導体集積回路は、温度特性の異な
る2種の定電流源の組み合わせを任意に選択できるよう
にしたので、温度特性の設計を容易にできるとともに、
集積回路化された後でも、動作条件にあわせて最適な温
度特性が得られる。
In the semiconductor integrated circuit according to the present invention, a combination of two types of constant current sources having different temperature characteristics can be arbitrarily selected, so that the temperature characteristics can be easily designed,
Even after being integrated, an optimal temperature characteristic can be obtained according to the operating conditions.

〔実施例〕 以下、この発明の一実施例を図について説明する。An embodiment of the present invention will be described below with reference to the drawings.

第1図はこの発明の一実施例を示す半導体集積回路の
回路図である。
FIG. 1 is a circuit diagram of a semiconductor integrated circuit showing one embodiment of the present invention.

図において、S11〜S1n S21〜S2nはアナログスイッチ
で、デコーダ3の出力端子の中で“H"レベルになってい
る端子に接続されているアナログスイッチだけONにな
る。また、ONになるアナログスイッチはS11〜S1nとS21
〜S2nの中からそれぞれ1個ずつで、出力端子2から見
た等価回路は前記従来の第2図の場合と同じになる。例
えば、アナログスイッチS12及びS22がONの場合は、第1
図のトランジスタQ12,Q22,抵抗12及びR22がそれぞれ、
従来の第2図のトランジスタQ1,Q2,抵抗R1及びR2に相当
する。
In FIG, S 11 ~S 1n S 21 ~S 2n is an analog switch, the only ON analog switch connected to the terminal which is the "H" level in the output terminal of the decoder 3. The analog switch which is turned ON and S 11 ~S 1n S 21
1 to 2n , the equivalent circuit viewed from the output terminal 2 is the same as that of FIG. For example, if the analog switches S 12 and S 22 is ON, the first
The transistors Q 12 and Q 22 , the resistors 12 and R 22 shown in FIG.
It corresponds to the conventional transistors Q 1 and Q 2 and the resistors R 1 and R 2 in FIG.

出力端子2に出力される電流値の温度係数は、抵抗R1
及びR2の値により決定される。抵抗R11とR21,R12とR22,
…,R1nとR2nの組み合わせを異なる温度係数が得られる
ように全て異なる値に選んで置けば、端子4に外部から
加える論理信号により、任意の抵抗の組み合わせが選ぶ
ことができ、結果として、任意の温度係数を持った出力
電流を得ることができる。
The temperature coefficient of the current value output to the output terminal 2 is the resistance R 1
And it is determined by the value of R 2. Resistors R 11 and R 21 , R 12 and R 22 ,
... If all combinations of R 1n and R 2n are selected and set to different values so as to obtain different temperature coefficients, an arbitrary combination of resistances can be selected by a logic signal externally applied to the terminal 4, and as a result, Thus, an output current having an arbitrary temperature coefficient can be obtained.

また、従来の第3図の電圧制御発振回路において、温
度補償用の基準定電流源Irefに第1図の基準定電流源を
使用すれば、外部論理信号により任意の温度補償条件を
与えることができる。
Also, in the conventional voltage-controlled oscillation circuit shown in FIG. 3, if the reference constant current source shown in FIG. 1 is used as the reference constant current source Iref for temperature compensation, any temperature compensation condition can be given by an external logic signal. Can be.

〔発明の効果〕〔The invention's effect〕

以上のようにこの発明によれば、出力電流を複数個用
意した異なる温度係数を持つ定電流源の組み合わせの中
から、外部論理信号により任意の組み合わせを選択でき
るようにしたので、計算算出が困難であったり、動作条
件によって補償の条件が異なるような場合、集積回路化
された後でも容易に最適な温度補償条件を容易に実現で
きるという効果がある。
As described above, according to the present invention, an arbitrary combination can be selected by an external logic signal from a combination of constant current sources having different temperature coefficients prepared for a plurality of output currents. In the case where the compensation conditions are different depending on the operating conditions, there is an effect that the optimum temperature compensation conditions can be easily realized even after being integrated.

また、この半導体集積回路を基準定電流源に用いた電
圧制御発振回路では、発振周波数の温度特性を目標通り
に容易に設定でき、発振周波数によって補償条件が異な
る場合でも外部信号によりプログラマブルに最適な補償
ができるという効果がある。
Also, in a voltage controlled oscillator circuit using this semiconductor integrated circuit as a reference constant current source, the temperature characteristics of the oscillation frequency can be easily set as desired, and even when the compensation conditions differ depending on the oscillation frequency, the optimum characteristics can be optimally programmed by an external signal. There is an effect that compensation can be performed.

【図面の簡単な説明】[Brief description of the drawings]

第1図はこの発明の一実施例を示す半導体集積回路の回
路図、第2図は従来の基準定電流源回路の回路図、第3
図は従来の電圧制御発振回路の回路図を示す。 Q1〜Q10,Q11〜Q1n,Q21〜Q2n……トランジスタ、R1〜R5,
R11〜R1n,R21〜R2n……抵抗、S11〜S1n,S21〜S2n……ア
ナログスイッチ、Vcc……電源電圧、VB……バイアス電
源、Iref……温度補償用基準定電流源、Vc……制御電圧
入力端子、C……タイミングコンデンサ、1……温度依
存性の無い定電流源、2……出力端子、3……デコー
ダ、4……外部論理信号入力端子、5〜8……電流源。 尚、図中、同一符号は同一、または相当部分を示す。
FIG. 1 is a circuit diagram of a semiconductor integrated circuit showing one embodiment of the present invention, FIG. 2 is a circuit diagram of a conventional reference constant current source circuit, and FIG.
FIG. 1 shows a circuit diagram of a conventional voltage controlled oscillation circuit. Q 1 to Q 10 , Q 11 to Q 1n , Q 21 to Q 2n ...... Transistors, R 1 to R 5 ,
R 11 to R 1n , R 21 to R 2n ...... Resistance, S 11 to S 1n , S 21 to S 2n … Analog switch, Vcc… Power supply voltage, V B … Bias power supply, I ref … Temperature compensation Reference constant current source, Vc ... Control voltage input terminal, C ... Timing capacitor, 1 ... Constant current source without temperature dependency, 2 ... Output terminal, 3 ... Decoder, 4 ... External logic signal input Terminals, 5-8: current source. In the drawings, the same reference numerals indicate the same or corresponding parts.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】出力電流を温度係数の異なる2種の定電流
源の出力の適当な割り合いの加算で得るようにし、上記
2種の定電流源の出力の加算の割り合いが異なる組み合
わせを複数個備え、外部論理信号により、上記複数個の
組み合わせの中から任意の組み合わせを1組だけ選択で
きるようにしたことを特徴とする半導体集積回路。
An output current is obtained by adding an appropriate ratio of outputs of two types of constant current sources having different temperature coefficients, and a combination having a different ratio of addition of outputs of the two types of constant current sources is used. A semiconductor integrated circuit comprising a plurality of units, wherein only one of the plurality of combinations can be selected by the external logic signal.
JP1213658A 1989-08-19 1989-08-19 Semiconductor integrated circuit Expired - Lifetime JP2706146B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1213658A JP2706146B2 (en) 1989-08-19 1989-08-19 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1213658A JP2706146B2 (en) 1989-08-19 1989-08-19 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPH0377412A JPH0377412A (en) 1991-04-03
JP2706146B2 true JP2706146B2 (en) 1998-01-28

Family

ID=16642813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1213658A Expired - Lifetime JP2706146B2 (en) 1989-08-19 1989-08-19 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JP2706146B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4755875B2 (en) * 2005-09-30 2011-08-24 三洋電機株式会社 Temperature compensation circuit
JP5315981B2 (en) * 2008-12-24 2013-10-16 富士通セミコンダクター株式会社 CURRENT GENERATION CIRCUIT, CURRENT GENERATION METHOD, AND ELECTRONIC DEVICE

Also Published As

Publication number Publication date
JPH0377412A (en) 1991-04-03

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