JPH05235661A - Constant current source circuit - Google Patents
Constant current source circuitInfo
- Publication number
- JPH05235661A JPH05235661A JP4075309A JP7530992A JPH05235661A JP H05235661 A JPH05235661 A JP H05235661A JP 4075309 A JP4075309 A JP 4075309A JP 7530992 A JP7530992 A JP 7530992A JP H05235661 A JPH05235661 A JP H05235661A
- Authority
- JP
- Japan
- Prior art keywords
- constant current
- temperature
- resistor
- diode
- current source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、集積回路等でよく使
用される定電流源回路に関し、特にその温度補償の改善
を図ったものに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a constant current source circuit often used in integrated circuits and the like, and more particularly to a constant current source circuit having improved temperature compensation.
【０００２】[0002]
【従来の技術】図１１は定電流源回路の従来例を示す回
路図である。図において、１は基準電圧Ｖ1 を発生する
基準電圧源、２はこの基準電圧源１の基準電圧Ｖ1 がそ
の非反転入力に印加される演算増幅器、３はこの演算増
幅器２の出力がベースに印加され、エミッタが演算増幅
器２の反転入力に接続されたＮＰＮ型のトランジスタ、
４はトランジスタ３のエミッタとグランド間に接続され
た抵抗である。2. Description of the Related Art FIG. 11 is a circuit diagram showing a conventional example of a constant current source circuit. In the figure, 1 is a reference voltage source for generating a reference voltage V 1 , 2 is an operational amplifier to which the reference voltage V 1 of the reference voltage source 1 is applied to its non-inverting input, and 3 is the output of this operational amplifier 2. An NPN-type transistor whose emitter is connected to the inverting input of the operational amplifier 2,
Reference numeral 4 is a resistor connected between the emitter of the transistor 3 and the ground.
【０００３】次に動作について説明する。演算増幅器２
とトランジスタ３によって負帰還回路が構成されてお
り、抵抗４には基準電圧源１と同等の電圧が印加されて
いる。基準電圧源１の電圧をＶ1 、抵抗４の抵抗値をＲ
1 とすれば、抵抗４に流れる電流は、Ｉ1 ＝Ｖ1 ／Ｒ1
となる。トランジスタ３の電流増幅率が充分高ければ、
コレクタよりほぼＩ1 と同等の電流を吸い込むことがで
きる。すなわち、Ｖ1 が一定、Ｒ1 が一定であればトラ
ンジスタ３のコレクタより、一定電流が得られるので、
この回路を定電流源回路として用いることができる。Next, the operation will be described. Operational amplifier 2
The transistor 3 constitutes a negative feedback circuit, and a voltage equal to that of the reference voltage source 1 is applied to the resistor 4. The voltage of the reference voltage source 1 is V 1 , and the resistance value of the resistor 4 is R
If 1, the current flowing through the resistor 4, I 1 = V 1 / R 1
Becomes If the current amplification factor of transistor 3 is high enough,
A current equivalent to I 1 can be absorbed from the collector. That is, if V 1 is constant and R 1 is constant, a constant current is obtained from the collector of the transistor 3,
This circuit can be used as a constant current source circuit.
【０００４】[0004]
【発明が解決しようとする課題】従来の定電流源回路は
以上のように構成されていたため、抵抗に温度特性があ
ると、定電流出力も温度特性を持ってしまうため、温度
特性のない抵抗を使用する必要があった。しかしなが
ら、特に定電流源回路をＩＣ化する場合、ＩＣ内部の抵
抗（拡散抵抗、ポリシリコン抵抗等）は、温度特性が大
きいことが通常であり、この従来回路の構成で温度特性
のない定電流源を実現するのは困難であった。Since the conventional constant current source circuit is configured as described above, if the resistance has a temperature characteristic, the constant current output also has a temperature characteristic. Had to use. However, particularly when the constant current source circuit is integrated into an IC, the resistance (diffusion resistance, polysilicon resistance, etc.) inside the IC usually has a large temperature characteristic, and the constant current with no temperature characteristic is obtained by the configuration of this conventional circuit. It was difficult to realize the source.
【０００５】こうした問題を解決するために、抵抗をＩ
Ｃ外部の抵抗として温度補償を行なうことが考えられる
が、それには、ＩＣに余分な端子が必要となり、また外
付け抵抗であるため、ＩＣ内部の抵抗との相対比がとれ
ない等の欠点があった。In order to solve these problems, the resistance is set to I
It is conceivable to perform temperature compensation as a resistance outside C, but this requires extra terminals in the IC, and since it is an external resistance, it has the drawback that the relative ratio with the resistance inside the IC cannot be obtained. there were.
【０００６】本発明は、上記のような問題点を解決する
ためになされたもので、温度特性の補償された定電流源
回路を、ＩＣ化に最適な形で提供せんとするものであ
る。The present invention has been made in order to solve the above-mentioned problems, and an object of the present invention is to provide a constant current source circuit whose temperature characteristics are compensated in an optimum form for IC implementation.
【０００７】[0007]
【課題を解決するための手段】この発明に係る定電流源
回路は、抵抗の温度特性を補償するために、基準電圧源
に温度補償特性を持たせることによって、定電流源を実
現したものであり、この基準電圧源の温度補償特性はダ
イオードもしくはダイオード接続されたトランジスタの
順方向電圧温度特性を用いて実現したものである。A constant current source circuit according to the present invention realizes a constant current source by providing a reference voltage source with a temperature compensation characteristic in order to compensate the temperature characteristic of a resistor. The temperature compensation characteristic of the reference voltage source is realized by using the forward voltage temperature characteristic of a diode or a diode-connected transistor.
【０００８】[0008]
【作用】この発明においては、上述のように構成したこ
とにより、温度特性の大きいＩＣ内部の抵抗を用いて
も、基準電圧源によって温度補償されるため、温度特性
のない外部抵抗等を用いる必要がなく、温度特性を持た
ない定電流源回路が実現できる。In the present invention, because of the above-described configuration, even if the internal resistance of the IC having a large temperature characteristic is used, the temperature is compensated by the reference voltage source, so that it is necessary to use an external resistor having no temperature characteristic. And a constant current source circuit having no temperature characteristic can be realized.
【０００９】[0009]
【実施例】以下、この発明の一実施例を図について説明
する。図１は本発明の一実施例による定電流源回路を示
すものであり、図において、図１１と同一符号は同一の
ものを示す。１０は本実施例における基準電圧源であ
り、相互に直列接続された、電流源Ｉ2 ，ダイオードＤ
1 ，電圧源Ｖ1 から構成されている。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows a constant current source circuit according to an embodiment of the present invention. In the figure, the same reference numerals as those in FIG. 11 denote the same elements. Reference numeral 10 is a reference voltage source in this embodiment, which is a current source I 2 and a diode D connected in series with each other.
1 and a voltage source V 1 .
【００１０】この実施例は、基準電圧源１０が、電流源
Ｉ2 ，ダイオードＤ1 ，電圧源Ｖ1から構成され、抵抗
４の温度特性を補償すべくダイオードＤ1 により温度補
償特性が付与されている点を除けば、従来例と同様の構
成を持つ。In this embodiment, the reference voltage source 10 comprises a current source I 2 , a diode D 1 and a voltage source V 1, and a temperature compensation characteristic is given by the diode D 1 to compensate the temperature characteristic of the resistor 4. Except for the above point, it has the same configuration as the conventional example.
【００１１】したがって得られる定電流出力Ｉ1 は、Ｉ
1 ＝Ｖ2 ／Ｒ1 で、これは従来例と同様である。ここで
Ｖ2 は、基準電圧源１０の基準電圧である。Therefore, the constant current output I 1 obtained is I
1 = V 2 / R 1 , which is the same as the conventional example. Here, V 2 is the reference voltage of the reference voltage source 10.
【００１２】次にその温度補償動作について説明する。
ダイオードＤ1 の順方向電圧ＶF の温度係数をαとす
る。また抵抗４の温度係数をρとすると、電流Ｉ1 は、Next, the temperature compensation operation will be described.
The temperature coefficient of the forward voltage V F of the diode D 1 is α. If the temperature coefficient of the resistor 4 is ρ, the current I 1 is
【００１３】 Ｉ1 ＝〔Ｖ1 ＋ＶF （１＋αＴ）〕／〔Ｒ1 （１＋ρＴ）〕 …(1) I 1 = [V 1 + V F (1 + αT)] / [R 1 (1 + ρT)] (1)
【００１４】で表わせる。Ｔは温度変化値である。した
がって、Can be expressed as T is a temperature change value. Therefore,
【００１５】 〔Ｖ1 ＋ＶF （１＋αＴ）〕／（１＋ρＴ） …(2) [V 1 + V F (1 + αT)] / (1 + ρT) (2)
【００１６】を一定とすれば、Ｉ1 の温度補償が実現で
きる。If I is constant, temperature compensation of I 1 can be realized.
【００１７】以下、理解を容易にするため具体的な数値
例を用いて説明する。室温（２５°Ｃ）にて抵抗４の値
をＲ1 ＝１０ｋΩ，ダイオードＤ1 の順方向電圧をＶF
＝０．７Ｖ，電圧源Ｖ1 の電圧をＶ1 ＝０．３Ｖとする
と、定電流出力をＩ1 ＝１００μＡと設定できる。In order to facilitate understanding, a specific numerical example will be described below. The value of the resistor 4 is R 1 = 10 kΩ and the forward voltage of the diode D 1 is V F at room temperature (25 ° C.).
= 0.7 V and the voltage of the voltage source V 1 is V 1 = 0.3 V, the constant current output can be set to I 1 = 100 μA.
【００１８】抵抗４の温度係数ρをρ＝−２０００ｐｐ
ｍ／°Ｃとする。ダイオードＤ1 はシリコンであれば、
順方向電圧ＶF の温度特性は絶対値で−２ｍＶ／°Ｃで
あることが理論上知られているため、この温度特性を温
度係数に換算すると、順方向電圧ＶF の温度係数αはα
＝−２８６０ｐｐｍ／°Ｃとなる。The temperature coefficient ρ of the resistor 4 is ρ = −2000 pp
m / ° C. If the diode D 1 is silicon,
It is theoretically known that the temperature characteristic of the forward voltage V F is −2 mV / ° C in absolute value. Therefore, when converting this temperature characteristic into a temperature coefficient, the temperature coefficient α of the forward voltage V F is α
= -2860 ppm / ° C.
【００１９】温度が１００°Ｃ上昇した場合を考えてみ
ると、抵抗４の値Ｒ1 は、Ｒ1 ＝１０ｋΩ・（１＋ρ×
１００°Ｃ）＝８ｋΩとなる。また基準電圧Ｖ2 は、Ｖ
2 ＝Ｖ1 ＋ＶF ・（１＋α×１００°Ｃ）＝０．３Ｖ＋
０．７Ｖ・（１−０．２８６）＝０．８Ｖとなる。この
時の電流Ｉ1 を求めると、Ｉ1 ＝Ｖ2 ／Ｒ1 ＝０．８Ｖ
／８ｋΩ＝１００μＡとなり、室温と比べ変化せず、温
度補償されていることがわかる。Considering the case where the temperature rises by 100 ° C., the value R 1 of the resistor 4 is R 1 = 10 kΩ (1 + ρ ×
100 ° C.) = 8 kΩ. The reference voltage V 2 is V
2 = V 1 + V F · (1 + α × 100 ° C) = 0.3V +
0.7V · (1−0.286) = 0.8V. When the current I 1 at this time is obtained, I 1 = V 2 / R 1 = 0.8V
/ 8 kΩ = 100 μA, which is the same as that at room temperature, and it can be seen that the temperature is compensated.
【００２０】図２は本発明の他の実施例である。この実
施例は、図１の基準電圧源１０に抵抗Ｒ2 ，Ｒ3 が追加
されている。これは、ダイオードの順方向電圧の温度係
数を抵抗比に応じて任意の温度係数とするためである。FIG. 2 shows another embodiment of the present invention. In this embodiment, resistors R 2 and R 3 are added to the reference voltage source 10 shown in FIG. This is because the temperature coefficient of the forward voltage of the diode is an arbitrary temperature coefficient according to the resistance ratio.
【００２１】理解を容易にするために具体的な数値例を
用いて説明する。抵抗の温度係数ρがρ＝−１０００ｐ
ｐｍ／°Ｃと、図１の実施例の１／２になった場合を考
える。この場合、補償する基準電圧源１の温度係数も１
／２とすれば良い。このため抵抗Ｒ2 ＝Ｒ3 ＝１０ｋΩ
とする。In order to facilitate understanding, a specific numerical example will be used for description. The temperature coefficient ρ of resistance is ρ = −1000p
Consider the case of pm / ° C, which is half that of the embodiment of FIG. In this case, the temperature coefficient of the reference voltage source 1 to be compensated is also 1
You can set it to / 2. Therefore, the resistance R 2 = R 3 = 10 kΩ
And
【００２２】図１の実施例と同様に、室温での抵抗４の
抵抗値をＲ1 ＝１０ｋΩ，ダイオードの順方向電圧をＶ
F ＝０．７Ｖとし、定電流値Ｉ1 がＩ1 ＝１００μＡと
なるように基準電圧源１０の電圧値をＶ2 ＝１Ｖとす
る。このとき、基準電圧源１の電圧値Ｖ2 は、Similar to the embodiment of FIG. 1, the resistance value of the resistor 4 at room temperature is R 1 = 10 kΩ, and the forward voltage of the diode is V.
The voltage value of the reference voltage source 10 is set to V 2 = 1V so that F = 0.7V and the constant current value I 1 becomes I 1 = 100 μA. At this time, the voltage value V 2 of the reference voltage source 1 is
【００２３】 Ｖ2 ＝〔（Ｒ3 ×ＶF ）／（Ｒ2 ＋Ｒ3 ）〕＋Ｖ1 …(3) V 2 = [(R 3 × V F ) / (R 2 + R 3 )] + V 1 (3)
【００２４】で与えられるから、電圧源Ｖ1 の電圧はＶ
1 ＝０．６５Ｖとなる。Since the voltage of the voltage source V 1 is V
It becomes 1 = 0.65V.
【００２５】次に室温から１００°Ｃ温度上昇した場合
を考えると、抵抗４の抵抗値Ｒ1 はＲ1 ＝１０ｋΩ・
（１＋ρ×１００°Ｃ）＝９ｋΩとなる。この時、基準
電圧源１０の電圧値Ｖ2 は、Next, considering the case where the temperature rises from room temperature to 100 ° C., the resistance value R 1 of the resistor 4 is R 1 = 10 kΩ.multidot.
(1 + ρ × 100 ° C.) = 9 kΩ. At this time, the voltage value V 2 of the reference voltage source 10 is
【００２６】 Ｖ2 ＝〔（Ｒ3 ×ＶF （１＋αＴ））／（Ｒ2 ＋Ｒ3 ）〕＋Ｖ1 …(4) V 2 = [(R 3 × V F (1 + αT)) / (R 2 + R 3 )] + V 1 (4)
【００２７】より、Ｖ2 ＝〔（１０ｋΩ×０．７Ｖ（１
＋α×１００°Ｃ））／（１０ｋΩ＋１０ｋΩ）〕＋
０．６５Ｖ＝〔０．７Ｖ・（１−０．２８６）／２〕＋
０．６５Ｖ＝０．９Ｖとなる。From the above, V 2 = [(10 kΩ × 0.7V (1
+ Α × 100 ° C)) / (10kΩ + 10kΩ)] +
0.65V = [0.7V ・ (1-0.286) / 2] +
It becomes 0.65V = 0.9V.
【００２８】したがって、Ｉ1 ＝Ｖ2 ／Ｒ1 ＝０．９Ｖ
／９ｋΩ＝１００μＡとなり、定電流値は室温と比べ変
化せず、温度補償されたことがわかる。Therefore, I 1 = V 2 / R 1 = 0.9V
/ 9 kΩ = 100 μA, the constant current value did not change compared to room temperature, and it is understood that temperature compensation was performed.
【００２９】以上の数値例から分かるように、抵抗の温
度係数に応じて抵抗Ｒ2 とＲ3 の分圧比を変えてやれば
任意の温度係数について補償可能である。As can be seen from the above numerical examples, any temperature coefficient can be compensated by changing the voltage division ratio of the resistors R 2 and R 3 according to the temperature coefficient of resistance.
【００３０】以上、抵抗の温度係数が負の場合について
述べたが、図１，図２の接続を、図３，図４のごとく変
えてやれば、抵抗の温度係数が正の場合にも同様に実現
できる。Although the case where the temperature coefficient of resistance is negative has been described above, if the connection of FIGS. 1 and 2 is changed as shown in FIGS. 3 and 4, the same applies to the case where the temperature coefficient of resistance is positive. Can be realized.
【００３１】また、抵抗の温度係数がかなり大きい場合
は、図５のごとくダイオードを接続し、補償温度係数も
大きくする様に改良してやれば良い。When the temperature coefficient of resistance is considerably large, it is sufficient to improve the temperature coefficient of compensation by connecting a diode as shown in FIG.
【００３２】さらに、上記実施例では、設定すべき電流
値Ｉ1 の設定を容易に決定するため、電圧源Ｖ1 を用い
たが、特定の条件（定電流値）では、図６のごとく電圧
源Ｖ1 を用いず接地としてもよく、上記実施例と同様の
効果が得られる。Further, in the above embodiment, the voltage source V 1 is used in order to easily determine the setting of the current value I 1 to be set. However, under a specific condition (constant current value), the voltage is as shown in FIG. The source V 1 may be used instead of grounding, and the same effect as in the above embodiment can be obtained.
【００３３】また、上記実施例では基準電圧源１０に定
電流源Ｉ2 を使用したが、条件によっては抵抗に置き換
えてもよく、同様に実現できる。この実施例を図７に示
す。Further, although the constant current source I 2 is used as the reference voltage source 10 in the above-mentioned embodiment, it may be replaced with a resistor depending on the conditions and the same can be realized. This embodiment is shown in FIG.
【００３４】また、図８のごとく、演算増幅器２とトラ
ンジスタ３を、トランジスタＱ1 と抵抗Ｒ4 からなる簡
易なボルテージフォロワ５に置きかえてやれば、少ない
構成素子で同様に実現できる。Further, as shown in FIG. 8, if the operational amplifier 2 and the transistor 3 are replaced with a simple voltage follower 5 consisting of a transistor Q 1 and a resistor R 4 , it can be realized similarly with a small number of constituent elements.
【００３５】また、図１ないし図８のダイオードＤ1 を
ダイオード接続されたトランジスタに置き換えてもよ
く、同様に実現できる。Further, the diode D 1 shown in FIGS. 1 to 8 may be replaced with a diode-connected transistor, which can be similarly realized.
【００３６】また、図９のごとく、トランジスタＱ2 の
ＶBEの温度係数を、基準電圧源１０に追加した抵抗
Ｒ2 ，Ｒ3 を用いてその抵抗比と同数倍した温度変化を
作り出すことにより、抵抗Ｒ1 の温度特性を任意に補償
できる。As shown in FIG. 9, the temperature coefficient of V BE of the transistor Q 2 is multiplied by resistances R 2 and R 3 added to the reference voltage source 10 to produce a temperature change equal to its resistance ratio. Thereby, the temperature characteristic of the resistor R 1 can be arbitrarily compensated.
【００３７】理解を容易にするため、具体的な数値例を
用いて説明する。室温（２５°Ｃ）にてＲ1 ＝１０ｋ
Ω，Ｉ1 ＝１００μＡに設定すると、Ｖ2 ＝１Ｖであ
る。Ｒ1の温度係数ρをρ＝−３０００ｐｐｍ／°Ｃと
すると、トランジスタＱ2 （ＶBE）の温度係数は−２ｍ
Ｖ／°Ｃであることが理論上解っているため、トランジ
スタＱ2 （ＶBE）の温度係数−２ｍＶ／°Ｃが抵抗Ｒ1
の温度係数−３０００ｐｐｍ／°Ｃに等しくなるように
その値を拡大するためには、抵抗比（Ｒ2 ＋Ｒ3 ）／Ｒ
3 を（Ｒ2 ＋Ｒ3 ）／Ｒ3 ＝（−３０００ｐｐｍ／°
Ｃ）／（−２ｍＶ／°Ｃ）＝１．５に選べば良いから、
Ｒ2 ＝５ｋΩ，Ｒ3 ＝１０ｋΩとする。したがってＶ1
＝−０．０５Ｖとしてやれば、Ｖ2 ＝１Ｖとなり、Ｉ1
＝１００μＡとなる（但し、ＶBE＝０．７Ｖとする）。
室温から１００°Ｃ温度上昇し、１２５°Ｃとなった場
合を考えて見ると、Ｒ1 ＝７ｋΩとなる。このときＶ2
＝１．５ＶBE−０．０５＝０．７Ｖとなり、Ｉ1 ＝１０
０μＡと変化しないことが解る。なお、ＶBEは−２ｍＶ
／°Ｃの温度特性を持つため、１２５°ＣではＶBE＝
０．５Ｖとなる。In order to facilitate understanding, a specific numerical example will be used for explanation. R 1 = 10k at room temperature (25 ° C)
When setting Ω and I 1 = 100 μA, V 2 = 1V. If the temperature coefficient ρ of R 1 is ρ = −3000 ppm / ° C, the temperature coefficient of the transistor Q 2 (V BE ) is −2 m.
Since it is theoretically known that the voltage is V / ° C, the temperature coefficient of the transistor Q 2 (V BE ) is -2 mV / ° C and the resistance R 1
To increase the value so that it becomes equal to the temperature coefficient of −3000 ppm / ° C, the resistance ratio (R 2 + R 3 ) / R
3 to (R 2 + R 3 ) / R 3 = (-3000 ppm / °
C) / (-2 mV / ° C) = 1.5, so
It is assumed that R 2 = 5 kΩ and R 3 = 10 kΩ. Therefore V 1
= −0.05V, V 2 = 1V, and I 1
= 100 μA (provided that V BE = 0.7 V).
Considering a case where the temperature rises from room temperature by 100 ° C. to 125 ° C., R 1 = 7 kΩ. At this time V 2
= 1.5V BE −0.05 = 0.7V, and I 1 = 10
It can be seen that it does not change to 0 μA. In addition, V BE is -2 mV
Since it has a temperature characteristic of / ° C, V BE = 125 ° C
It becomes 0.5V.
【００３８】次に、Ｒ1 の温度係数がρ＝−４５００ｐ
ｐｍ／°Ｃである場合を考える。この場合は、（Ｒ2 ＋
Ｒ3 ）／Ｒ3 ＝（−４５００ｐｐｍ／°Ｃ）／（−２ｍ
Ｖ／°Ｃ）＝２．２５とすれば良く、これはＲ2 ＝１
２．５ＫΩ，Ｒ3 ＝１０ＫΩとすることにより実現でき
る。また電圧源Ｖ1 の電圧をＶ1 ＝−０．５７５Ｖとす
る。室温（２５°ｃ）では同様にＲ1 ＝１０ｋΩ，ＶBE
＝０．７Ｖであるから、Ｖ2 ＝１Ｖとなり、Ｉ1 ＝１０
０μＡと設定できる。Next, the temperature coefficient of R 1 is ρ = -4500 p
Consider the case of pm / ° C. In this case, (R 2 +
R 3) / R 3 = ( - 4500ppm / ° C) / (- 2m
V / ° C) = 2.25, which is R 2 = 1
It can be realized by setting 2.5 KΩ and R 3 = 10 KΩ. Further, the voltage of the voltage source V 1 is V 1 = −0.575V. Similarly, at room temperature (25 ° C), R 1 = 10 kΩ, V BE
= 0.7V, V 2 = 1V and I 1 = 10
It can be set to 0 μA.
【００３９】室温から１００°ｃ温度上昇したと仮定す
ると、Ｒ1 ＝５．５ＫΩ，Ｖ2 ＝２．２５ＶBE（０．５
Ｖ）＋Ｖ1 （−０．５７５Ｖ）＝０．５５Ｖとなり、Ｉ
1 ＝１００μＡとなり、やはり変化しない。Assuming a temperature rise of 100 ° C. from room temperature, R 1 = 5.5 KΩ, V 2 = 2.25 V BE (0.5
V) + V 1 (−0.575V) = 0.55V, and I
1 = 100 μA, which remains unchanged.
【００４０】以上述べた様に、この図９の構成によっ
て、トランジスタのＶBEの温度係数を抵抗比と同数倍し
てやることによっても、抵抗の温度特性を任意に補償で
き、ＩＣ化に最適な温度補償された定電流源を得ること
ができる。As described above, with the configuration of FIG. 9, the temperature coefficient of resistance can be arbitrarily compensated by multiplying the temperature coefficient of V BE of the transistor by the same number as the resistance ratio, which is ideal for IC implementation. It is possible to obtain a temperature-compensated constant current source.
【００４１】なお、Ｖ1 は設定すべき電流値Ｉ1 を任意
に設定するためのものであるが、特定の条件（定電流
値）ではＶ1 を用いず接地しても同様の効果が得られ
る。Although V 1 is for arbitrarily setting the current value I 1 to be set, the same effect can be obtained by grounding without using V 1 under a specific condition (constant current value). Be done.
【００４２】また、図９は抵抗の温度係数が負の場合に
ついて述べたが、図１０の様に抵抗の温度係数が正の場
合も同様に実現できる。Although FIG. 9 describes the case where the temperature coefficient of resistance is negative, the same can be realized when the temperature coefficient of resistance is positive as in FIG.
【００４３】また、トランジスタＱ2 はＮＰＮで説明し
たが、ＰＮＰトランジスタにても同様に実現可能であ
る。Although the transistor Q 2 has been described as an NPN, it can be similarly realized by a PNP transistor.
【００４４】[0044]
【発明の効果】以上述べたように、この発明に係る定電
流源回路によれば、ダイオードもしくはダイオード接続
されたトランジスタの順方向電圧温度特性を用いて抵抗
の温度特性を補償するような温度補償特性を持たせるよ
うにしたので、抵抗の温度特性の影響を受けず、温度変
化のない定電流源回路が得られ、ＩＣ化が容易になるも
のが得られる効果がある。As described above, according to the constant current source circuit of the present invention, the temperature compensation of the temperature characteristic of the resistor is performed by using the forward voltage temperature characteristic of the diode or the diode-connected transistor. Since the characteristics are provided, there is an effect that a constant current source circuit that is not affected by the temperature characteristics of the resistance and does not change in temperature can be obtained, and an IC can be easily formed.
【図１】この発明の第１の実施例を示す回路図である。FIG. 1 is a circuit diagram showing a first embodiment of the present invention.
【図２】この発明の第２の実施例を示す回路図である。FIG. 2 is a circuit diagram showing a second embodiment of the present invention.
【図３】この発明の第３の実施例を示す回路図である。FIG. 3 is a circuit diagram showing a third embodiment of the present invention.
【図４】この発明の第４の実施例を示す回路図である。FIG. 4 is a circuit diagram showing a fourth embodiment of the present invention.
【図５】この発明の第５の実施例を示す回路図である。FIG. 5 is a circuit diagram showing a fifth embodiment of the present invention.
【図６】この発明の第６の実施例を示す回路図である。FIG. 6 is a circuit diagram showing a sixth embodiment of the present invention.
【図７】この発明の第７の実施例を示す回路図である。FIG. 7 is a circuit diagram showing a seventh embodiment of the present invention.
【図８】この発明の第８の実施例を示す回路図である。FIG. 8 is a circuit diagram showing an eighth embodiment of the present invention.
【図９】この発明の第９の実施例を示す回路図である。FIG. 9 is a circuit diagram showing a ninth embodiment of the present invention.
【図１０】この発明の第１０の実施例を示す回路図であ
る。FIG. 10 is a circuit diagram showing a tenth embodiment of the present invention.
【図１１】従来の定電流源回路を示す回路図である。FIG. 11 is a circuit diagram showing a conventional constant current source circuit.
２ 演算増幅器 ３ トランジスタ ４，Ｒ2 ，Ｒ3 抵抗 Ｄ1 ダイオード Ｑ2 ダイオード接続されたトランジスタ １０ 基準電圧源2 operational amplifier 3 transistor 4, R 2 , R 3 resistance D 1 diode Q 2 diode connected transistor 10 reference voltage source
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成４年７月８日[Submission date] July 8, 1992
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】図面[Document name to be corrected] Drawing
【補正対象項目名】図５[Name of item to be corrected] Figure 5
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【図５】 [Figure 5]
Claims (1)
定電流を得る定電流源回路において、 上記基準電圧源内に、その順方向電圧温度変化により上
記抵抗の温度変化を補償する、ダイオードもしくはダイ
オード接続されたトランジスタを設けてなることを特徴
とする定電流源回路。1. A constant current source circuit for converting a voltage of a reference voltage source by a resistor to obtain a constant current, wherein a diode or a diode or a diode, which compensates the temperature change of the resistor by the temperature change of the forward voltage in the reference voltage source. A constant current source circuit comprising a diode-connected transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4075309A JP2809927B2 (en) | 1992-02-24 | 1992-02-24 | Constant current source circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4075309A JP2809927B2 (en) | 1992-02-24 | 1992-02-24 | Constant current source circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05235661A true JPH05235661A (en) | 1993-09-10 |
| JP2809927B2 JP2809927B2 (en) | 1998-10-15 |
Family
ID=13572528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4075309A Expired - Fee Related JP2809927B2 (en) | 1992-02-24 | 1992-02-24 | Constant current source circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2809927B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011091758A (en) * | 2009-10-26 | 2011-05-06 | Seiko Epson Corp | Constant current generating circuit, resistance circuit, integrated circuit device and electronic apparatus |
| JP2013062757A (en) * | 2011-09-15 | 2013-04-04 | Seiko Npc Corp | Lvds output circuit |
| JP2014099926A (en) * | 2014-02-20 | 2014-05-29 | Seiko Epson Corp | Constant current generating circuit, resistance circuit, integrated circuit device, and electronic apparatus |
| US11329648B2 (en) | 2020-03-24 | 2022-05-10 | Mitsumi Electric Co., Ltd. | Current source circuit |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7847534B2 (en) | 2007-03-26 | 2010-12-07 | Panasonic Corporation | Reference current circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6017316A (en) * | 1983-07-08 | 1985-01-29 | Canon Inc | Compensating circuit of temperature |
| JPH03144812A (en) * | 1989-10-31 | 1991-06-20 | Matsushita Electric Ind Co Ltd | Constant current circuit |
-
1992
- 1992-02-24 JP JP4075309A patent/JP2809927B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6017316A (en) * | 1983-07-08 | 1985-01-29 | Canon Inc | Compensating circuit of temperature |
| JPH03144812A (en) * | 1989-10-31 | 1991-06-20 | Matsushita Electric Ind Co Ltd | Constant current circuit |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011091758A (en) * | 2009-10-26 | 2011-05-06 | Seiko Epson Corp | Constant current generating circuit, resistance circuit, integrated circuit device and electronic apparatus |
| JP2013062757A (en) * | 2011-09-15 | 2013-04-04 | Seiko Npc Corp | Lvds output circuit |
| JP2014099926A (en) * | 2014-02-20 | 2014-05-29 | Seiko Epson Corp | Constant current generating circuit, resistance circuit, integrated circuit device, and electronic apparatus |
| US11329648B2 (en) | 2020-03-24 | 2022-05-10 | Mitsumi Electric Co., Ltd. | Current source circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2809927B2 (en) | 1998-10-15 |
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