JP3088336B2 - Frequency conversion circuit - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a frequency conversion circuit, and more particularly to a frequency conversion circuit composed of a semiconductor integrated circuit used at a low power supply voltage and in a wide temperature range for use in a cellular phone or the like.

[0002]

2. Description of the Related Art As an example of a conventional frequency conversion circuit,
"NEC Data Book Silicon High Frequency Monolithic I
C μPC1694GR Application Note 1
864 pages, October 995 ".
FIG. 5 shows a circuit obtained by extracting a mixer circuit, a local buffer amplifier, and a bias circuit that are directly related to the frequency conversion operation from this circuit.

In FIG. 5, reference numeral 200 denotes a mixer circuit that performs a frequency conversion operation, indicated by a broken line, 100 denotes a local buffer amplifier that supplies a local signal to the mixer circuit, and 30 denotes a mixer circuit.
Reference numeral 0 denotes a bias circuit constituted by a band gap regulator. Reference numeral 1 denotes a power supply terminal connected to the power supply B1, and 2 denotes a ground terminal.

The mixer circuit 200 includes a transistor Q11
To Q16 and resistors R10 to R16. The collectors of the transistors Q11 and Q13 are connected to the power supply terminal 1 via a resistor R15.
It is also connected to the mixer output terminal 202. Similarly, the collectors of the transistors Q12 and Q14 are connected to the power supply terminal 1 via the resistor R16.
03 is also connected. The emitters of the transistors Q11 and Q12 are connected to the collector of the transistor Q15, and the emitters of the transistors Q13 and Q14 are connected to the transistor Q15.
16 and the transistors Q15, Q16
Are connected to mixer input terminals 204 and 201, respectively. The emitters of the transistors Q15 and Q16 are connected to the ground terminal 2 via the resistors R13 and R14, respectively.
Further, a resistor R10 is connected between the emitters of the transistors Q15 and Q16.

The local buffer amplifier 100 includes transistors Q1 and Q2 and resistors R1 to R6.
The collector of the transistor Q1 is connected to the power supply terminal 1 via the resistors R1 and R6.
Also connected to 14 bases. Similarly, transistor Q2
Is connected to the common connection point of the resistors R1 and R6 via the resistor R2, and the transistors Q12 and Q1
Also connect to 3's base. The emitters of the transistors Q1 and Q2 are connected to the ground terminal 2 via the resistor R5, and the bases of the transistors Q1 and Q2 are connected to the local input terminals 102 and 101, respectively.

[0006] The bias circuit 300 is a bandgap regulator and includes transistors Q31 to Q33, resistors R31 to R33, and a current source I1. Also, 3
01 is an output terminal of the bias circuit 300,
1, R12, R3, and R4 are connected to the bases of the transistors Q15, Q16, Q1, and Q2, respectively.

Next, the basic operation of the conventional frequency conversion circuit shown in FIG. 5 will be described.

The signal f1 input to the mixer input terminals 201 and 204 is multiplied by the local signal f2 input to the local input terminals 101 and 102 and amplified by the local buffer amplifier 100 by the mixer circuit 200 to obtain the signal f1.
Signals corresponding to the sum and difference of the frequencies of 1 and the signal f2 are output from the mixer output terminals 202 and 203.

The bias circuit 300 supplies a bias voltage to the local buffer amplifier 100 and the mixer circuit 200. Of the transistors constituting the local buffer amplifier 100 and the mixer circuit 200, the base bias voltage of the transistors Q1, Q2, Q15, and Q16 is determined by the voltage of the output terminal 301, and the base bias voltage of the transistors Q11 to Q14 is the resistance R1. , R
2 and the voltage drop of the resistor R6.

Next, using the conventional frequency conversion circuit shown in FIG. 5 at a low power supply voltage (2.6 V), the local buffer amplifier 100 and the mixer circuit 200 at normal temperature (25 ° C.).
The operation when the temperature is increased after optimizing each bias point described above will be described.

As can be seen from FIG. 5, the bias points of the local buffer amplifier 100 and the mixer circuit 200 and the emitter-collector voltage of the transistor Q15 are obtained by the following equations (1) to (5).

VE (Q15) = VB−VBE (Q15) (1) VE (Q1) = VB−VBE (Q1) (2) VC (Q1) = Vcc− (VE (Q1) / R5) × (R6 + R1 / 2) (3) VC (Q15) = VC (Q1) −VBE (Q11) (4) VCE (Q15) = VC (Q15) −VE (Q15)・ (5) Here, VBE (Q11), VBE (Q1), VBE
(Q15) are transistors Q11, Q1, Q
15, the base-emitter voltage VB is the bias circuit 3
00, the voltage of the output terminal 301, VC (Q1), VC (Q
15) are the collector voltages of the transistors Q1 and Q15, VE (Q1) and VE (Q15) are the emitter voltages of the transistors Q1 and Q15 and VCE (Q1
5) is a collector-emitter voltage of the transistor Q15, and Vcc is a power supply voltage supplied to the power supply terminal 1.
The voltage drop of the resistors R3, R4, R11, R12 is
Ignored because it is small.

From equations (1) to (5), the base-emitter voltage of each transistor is 0.8 V at room temperature,
The temperature coefficient of the voltage between the emitters is set to −2 mV / ° C., and VB =
1.4V, R5 = 250Ω, R6 = 150Ω, R1 = 2
Assuming that the resistance temperature coefficients of all the resistors are equal to 00Ω, the temperature changes of the equations (1) to (5) are calculated as shown in FIG.

As can be seen from FIG. 6, the transistor Q1
5, the collector-emitter voltage VCE (Q15) is the designed value of 0.6 V at room temperature, but is 0.4 V at 125 ° C.
And the transistor Q15 tends to be saturated on the high temperature side.

This is because a voltage VB having no temperature dependency is applied to the base of the transistor Q1. When the base-emitter voltage of the transistor decreases at a high temperature, the emitter voltage VE (Q1) of the transistor Q1 increases by +2 mV.
/ ° C., the current in the resistor R5 increases, and the voltage drop in the resistors R1 and R6 increases, so that the transistor Q
This is because the collector voltage VC (Q1) of the first transistor drops.

More specifically, (R) in equation (3)
6 + R1 / 2) / R5, each resistance value is set to be 1, so that the collector voltage VC of the transistor Q1 is
(Q1) is the emitter voltage VE (Q
A temperature change of −2 mV / ° C., which is opposite to 1). The collector voltage VC (Q15) of the transistor Q15 is
As can be seen from the equation (4), the base voltage of the transistor Q11 is calculated based on the collector voltage VC (Q1) of the transistor Q1.
Since the value becomes lower by the voltage VBE (Q11) between the emitters, the temperature change is canceled.

On the other hand, the emitter voltage VE (Q15) of the transistor Q15 rises at a high temperature because the voltage VB is applied to the base similarly to the transistor Q1. Therefore, the collector-emitter voltage VCE of transistor Q15
(Q15) becomes smaller at high temperatures.

[0018]

The above-mentioned conventional frequency conversion circuit is composed of transistors Q1, Q2, Q15, Q16.
Is supplied from the bias circuit 300 using the bandgap regulator, and when used at a low power supply voltage and at a high temperature, the collector-emitter voltage of the transistor Q15 and the transistor Q16 becomes small due to the fluctuation of the bias voltage. Therefore, there is a problem that characteristics such as a maximum output are deteriorated.

In a device such as a mobile phone, it is required that the device operates at a low power supply voltage of about 2.6 V, that characteristics such as gain do not change even if the power supply voltage fluctuates, and that current consumption be small. . As a bias circuit that can satisfy the demand with a small number of elements, a bandgap regulator is superior, but the bandgap regulator generally has the characteristic that the output voltage has little temperature dependence, and this characteristic causes the above-mentioned problem. A point occurs.

The circuit configuration of the mixer circuit 200 and the local buffer amplifier 100 shown in FIG. 5 is an excellent frequency conversion circuit that can operate with a low power supply voltage with a small number of elements. In order to avoid the above-mentioned problem of characteristic degradation at high temperatures without making a substantial change, the following methods (A), (B) and (C) can be considered, but in any case, the fundamental solution It does not become.

(A) In order to prevent saturation of the transistors Q15, Q16 at high temperatures, the transistors Q11, Q16
The base bias voltage of Q14 is set high.

This method uses transistors Q11 to Q14.
Can easily be saturated and cannot be adopted. (B) The emitter voltage VE of the transistor Q1 in equation (3)
Each resistance value is set so that the term of (R6 + R1 / 2) / R5 multiplied by (Q1) becomes smaller than 1, and the temperature coefficient of the collector voltage VC (Q) of the transistor Q1 is reduced.

In this method, since the resistance R5 is increased, the current flowing through the transistors Q1 and Q2 is reduced, and the gain of the local buffer amplifier 100 is reduced as it is. Therefore, the resistance values of the resistors R1, R2, and R6 are increased so as not to lower the gain. However, the thermal noise due to these resistors is increased this time and cannot be adopted in the case of (A). (C) The resistors R1 and R2 and the transistors Q11 to Q14
Are capacitively coupled between the bases of the transistors Q11 to Q1.
The base bias of 4 is the local buffer amplifier 10
It is designed to be independent of each bias voltage of 0.

This method uses transistors Q11-Q14.
Is not a fundamental solution because a new base bias circuit is required and the temperature dependence of the circuit becomes a problem again.

Known documents of the bias circuit for improving the characteristic deterioration at the time of the temperature fluctuation include the following three points 1) to 3), all of which increase the cost as a semiconductor integrated circuit. And the circuit becomes complicated,
It is difficult to use it in a frequency conversion circuit that assumes a low power supply voltage. 1) Japanese Patent Application Laid-Open No. 58-127440 Although a thermistor element and a differential amplifier are used for a bias voltage temperature compensation circuit, the use of a special element called a thermistor element increases the cost. 2) JP-A-2-90707 This is a method of connecting a field effect transistor and a resistor in series, amplifying the difference by using the divided voltage and an external voltage as an input of a differential circuit, and generating a bias voltage. There is a problem that the circuit is complicated by using a differential circuit for the bias circuit. 3) JP-A-1-180107 Although a bias circuit having a differential circuit and a source follower type amplifier circuit is used, the circuit becomes complicated because a differential circuit is used as in 2). Furthermore, it is difficult to use it for a low power supply voltage.

Therefore, an object of the present invention is to reduce the voltage between the collector and the emitter of the transistor constituting the mixer circuit with a very simple circuit configuration at a low power supply voltage and over a wide temperature range from room temperature to high temperature. It is therefore an object of the present invention to provide a frequency conversion circuit which prevents such a problem and has no characteristic deterioration such as maximum output.

[0027]

A frequency conversion circuit according to the present invention comprises first and second transistors constituting a first differential transistor, and a first load connected to a collector of the first transistor. , A second load connected to the collector of the second transistor, and the first and second loads
, A local buffer amplifier for amplifying a local signal input to each base of the transistors, third and fourth transistors constituting a second differential transistor, and emitters common to the collectors of the third transistors. A third differential transistor composed of fifth and sixth transistors to be connected, and a fourth differential transistor composed of seventh and eighth transistors having respective emitters commonly connected to the collector of the fourth transistor. A base of the fifth transistor is connected to a base of the eighth transistor and a collector of the first transistor;
The base of the sixth transistor is connected to the base of the seventh transistor and the collector of the second transistor, the collector of the fifth transistor is connected to the seventh collector, the sixth transistor And the third and fourth collectors are connected to the eighth collector.
The mixer input signal input to each base of
A mixer circuit for multiplying the output signal of the local buffer amplifier input to each base of the eighth transistor, a first output terminal for outputting a voltage with little temperature dependency, and a temperature lower than the set temperature. A temperature-dependent adjustment circuit having a second output terminal that outputs a voltage that is the same as the voltage output from the first output terminal, and that monotonically decreases with a rise in temperature at a temperature higher than the set temperature. And applying a voltage from the second output terminal to each base of the first to fourth transistors.

[0028]

Next, embodiments of the present invention will be described in detail with reference to the drawings.

Note that components common to those of the conventional frequency conversion circuit are denoted by common reference characters / numbers.

FIG. 1 is a circuit diagram showing a frequency conversion circuit according to an embodiment of the present invention. The local buffer amplifier 100 and the conventional frequency conversion circuit shown in FIG.
A temperature-dependent adjusting circuit 210 including resistors R20 and R21 and transistors Q20 and Q21 is provided in the mixer circuit 200.
Is newly added. As the bias voltage source B2, a circuit configuration such as a band gap regulator that has low temperature dependency of the output voltage is used.

The output terminal 302 of the bias voltage source B2 is connected in series to the resistors R20 and R21.
Connected to the collector and base of diode-connected transistor Q20. The emitter of transistor Q20 is connected to the collector and base of transistor Q21, which is also diode-connected, and the emitter of transistor Q21 is connected to ground terminal 2. The common connection point of the resistors R20 and R21 is connected to the bases of the transistors Q1, Q2, Q15 and Q16 via the resistors R3, R4, R11 and R12.

Next, using at a low power supply voltage (2.6 V),
After optimizing each bias point of the local buffer amplifier 100 and the mixer circuit 200 at the normal temperature (25 ° C.) by the temperature dependency adjusting circuit 210 and then increasing the temperature, the frequency conversion circuit according to the embodiment of the present invention increases the temperature. The operation will be described with reference to FIGS.

First, when the emitter voltages VE (Q1) and VE (Q15) of the transistors Q1 and Q15 are obtained, the following equations (6) and (7) are obtained.

VE (Q15) = V1-VBE (Q15) (6) VE (Q1) = V1-VBE (Q1) (7) Here, V1 is common to the resistors R20 and R21. The voltage at the connection point, that is, the output voltage of the temperature dependence adjustment circuit 210. The collector voltages VC (Q1) and VC (Q15) of the transistors Q1 and Q15 and the transistor Q1
The collector-emitter voltage VCE (Q15) of No. 5 can be calculated by equations (3), (4) and (5), respectively.

FIG. 2 shows that the base-emitter voltage of each transistor is 0.8 V at room temperature and the temperature coefficient of the base-emitter voltage of each transistor is -2 mV / .degree.
R5 = 250Ω, R6 = 150Ω, R1 = 200
Assuming that the resistance coefficients of the resistors R1 to R6 and the resistances R11 to R16 are equal and that the resistance values and the temperature coefficients of the resistors R20 and R21 constituting the temperature dependence adjustment circuit 210 are equal, the equations (3) to (3) It is the graph which showed the temperature change of 7) formula.

As can be seen from FIG. 2, the transistor Q1
5, the collector-emitter voltage VCE (Q15) is set to 0.6 V at room temperature, but changes to 0.5 V up to 75 ° C. in the same manner as the conventional frequency conversion circuit of FIG.
Although it decreases to 0.6 V at 125 ° C,
It is hard to be saturated.

The reason is that when the temperature rises to 75 ° C. or higher, the base-emitter voltages of the transistors Q20 and Q21 become small, the transistors Q20 and Q21 conduct, and the output voltage V1 becomes the following equation (8). is there.

That is, at 25 ° C., the transistor Q2
Since the base-emitter voltage of 0 and Q21 is 0.8 V, unless a voltage of 1.6 V or more is applied to the collector of transistor Q20, transistors Q20 and Q21 do not conduct. On the other hand, the voltage of the bias voltage source B2 is 1.4
V, the transistors Q20 and Q21 at 25 ° C.
Does not conduct.

When the temperature rises from 25 ° C. to 75 ° C. by 50 ° C., the base-emitter voltages VBE (Q20) and VBE (Q21) of transistors Q20 and Q21 become 0.8V
From -2mV / ° C x 50 ° C = -0.1V decreased to 0.7V
Becomes On the other hand, the voltage of the bias voltage source B2 remains at 1.4 V because there is no temperature dependency. Therefore, the collector voltage of transistor Q20 is
1 becomes 1.4 V or more, which is necessary for the transistor 1 to conduct, and the transistors Q20 and Q21 conduct.

[0040]

Here, VBE (Q20) and VBE (Q2
1) is the base-emitter voltage of the transistors Q20 and Q21, and VB is the output voltage of the bias voltage source B2.

As can be easily understood from the above description, when the temperature rises above 75 ° C., the transistors Q20 and Q2
1 base-emitter voltage VBE (Q20), VBE
Since (Q21) further decreases from 0.7V, the transistors Q20 and Q21 maintain conduction.

Assuming that R20 = R21 in the equation (8), the following equation (9) is obtained.

V1 = VB / 2 + VBE (9) where VBE (Q20) = VBE (Q21) = VBE
And From equation (9), the output voltage V1 has a temperature dependence of one base-emitter voltage (−2 mV / ° C.).
Therefore, at 75 ° C. or higher, the temperature dependence of the emitter voltage VE (Q1) of the transistor Q1 is canceled out by 0.7
V becomes constant. As a result, the current of the resistor R5 does not increase,
The voltage drop at the resistors R1 and R6 does not increase. Therefore, the collector voltage VC (Q1) of the transistor Q1 is also constant regardless of the temperature.

The collector voltage VC (Q15) of the transistor Q15 is equal to the collector voltage VC of the transistor Q1.
Since the value is lower than C (Q1) by the voltage VBE (Q11) between the base and the emitter of the transistor Q11, the temperature dependency of one base-emitter voltage (+2 mV /
° C).

Since the output voltage V1 is applied to the base of the transistor Q15, the emitter voltage of the transistor Q15 becomes constant at 0.7V. Therefore, at 75 ° C. or more, the collector-emitter voltage VC
E (Q15) increases again.

On the other hand, at 75 ° C. or lower, the transistor Q2
Since the base-emitter voltage of 0 and Q21 is higher than 0.7 V, the transistors Q20 and Q21 do not conduct. Therefore, V1 = VB, which is the same as the temperature change of the conventional frequency conversion circuit shown in FIG.

As described above, the frequency conversion circuit according to the present embodiment operates at a low power supply voltage of about 2.6 V over a wide temperature range from room temperature to 125 ° C.
It is possible to prevent the voltage between the collector and the emitter of each transistor constituting 00 from decreasing, and to prevent deterioration of characteristics such as the maximum output.

Next, a second embodiment of the present invention will be described in detail with reference to the drawings.

FIG. 3 is a circuit diagram showing a frequency conversion circuit according to a second embodiment of the present invention. The difference from the frequency conversion circuit according to the first embodiment shown in FIG. Is changed to the temperature dependency adjustment circuit 211. Therefore, transistors Q15, Q16
Output voltage VB directly from the bias voltage source B2
Is applied. Thus, the emitter voltage of the transistor Q15 is determined not by the expression (6) but by the expression (1), and the same applies to other variables shown in FIG. That is, the collector voltage VC (Q1) of the transistor Q1, the collector voltage VC (Q15) of the transistor Q15, the transistor Q1
15, the collector-emitter voltage VCE (Q15), the emitter voltage VE (Q1) of the transistor Q1, and the output voltage V1 of the temperature dependency adjusting circuit 211 are (3)
It is calculated by the equations (4), (5) and (8).

As can be seen from FIG. 4, the transistor Q1
The collector-emitter voltage VCE (Q15) of No. 5 is set to 0.6 V at room temperature. However, the same operation as VCE (Q15) of FIG. At 75 ° C. or higher, the voltage is constant at 0.5 V. As in FIG. 2, VCE (Q15) at 125 ° C. is larger than 0.4 V in the case of the conventional frequency conversion circuit of FIG. 6, and the transistor Q15 is hardly saturated.

Although the values of the resistors R20 and R21 are equal in both the first and second embodiments, this is because when the term of (R6 + R1 / 2) / R5 in the equation (3) is 1, This is for canceling the temperature dependency of the collector voltage VC (Q1) of the transistor Q1. (R6 + R1 /
2) If the term of / R5 is not 1, resistors R20, R21
By adjusting the resistance ratio R20 / R21, it is possible to adjust the bias points of the local buffer amplifier 100 and the mixer circuit 200 to set an optimum temperature dependency.

Note that the first embodiment and the first embodiment
In the above embodiment, the description has been given of the example of the circuit using the bipolar transistor. However, the same effect can be obtained by configuring the circuit using the MOS transistor as the circuit element. That is, in the first embodiment and the first embodiment, by changing the emitter to the source, the base to the gate, and the collector to the drain, it is possible to easily replace the MOS circuit.

Further, using a bi-MOS circuit, the mixer circuit 200 and the local buffer amplifier 100
The temperature dependency adjusting circuits 210 and 211 are configured by an OS circuit.
Can be configured using a bipolar element.

[0055]

As described above, the frequency conversion circuit according to the present invention uses an extremely simple circuit configuration, has a small number of elements, and has a wide temperature range from room temperature to high temperature under a low power supply voltage operating environment. It is possible to prevent the voltage between the collector and the emitter of the transistor of the mixer circuit from being reduced over the range, and to prevent deterioration of characteristics such as the maximum output.

[Brief description of the drawings]

FIG. 1 is a circuit diagram showing a first embodiment of a frequency conversion circuit of the present invention.

FIG. 2 is a diagram showing a relationship between a DC voltage inside the circuit and a temperature when the circuit of FIG. 1 is used at a power supply voltage of 2.6 V and the temperature is increased.

FIG. 3 is a circuit diagram showing a second embodiment of the frequency conversion circuit of the present invention.

FIG. 4 is a diagram showing the relationship between the DC voltage inside the circuit and the temperature when the circuit of FIG. 3 is used at a power supply voltage of 2.6 V and the temperature is raised.

FIG. 5 is a circuit diagram showing a conventional frequency conversion circuit.

6 is a diagram showing the relationship between the DC voltage inside the circuit and the temperature when the circuit of FIG. 6 is used at a power supply voltage of 2.6 V and the temperature is raised.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Power supply terminal 2 Ground terminal 100 Local buffer amplifier 101,102 Local input terminal 200 Mixer circuit 201,204 Mixer input terminal 202,203 Mixer output terminal 210,211 Temperature dependence adjustment circuit 300 Bias circuit 301,302 Output terminal B1 Power source B2 Bias voltage source R1 to R6, R10 to R16, R20, R21, R31
-R33 resistance Q1, Q2, Q11-Q16, Q20, Q21, Q31
~ Q33 transistor

──────────────────────────────────────────────────続 き Continued on the front page (58) Fields surveyed (Int. Cl. ⁷ , DB name) H03D ⁷ /00-7/14 G03G 1/00-7/08 H03F 1/30

Claims (22)

(57) [Claims] 1. A first differential transistor constituting a first differential transistor
And a second transistor, a first load connected to the collector of the first transistor, and a second load connected to the collector of the second transistor. A local buffer amplifier for amplifying a local signal input to each base; third and fourth transistors constituting a second differential transistor; and a third transistor commonly connected to the collector of the third transistor. A third differential transistor comprising fifth and sixth transistors, and seventh and eighth transistors each having an emitter commonly connected to the collector of the fourth transistor.
And a fourth differential transistor comprising: a fifth transistor, a base of the fifth transistor connected to a base of the eighth transistor and a collector of the first transistor, and a base of the sixth transistor. Connects the base of the seventh transistor and the collector of the second transistor, connects the collector of the fifth transistor to the seventh collector, and connects the collector of the sixth transistor to the eighth transistor. Multiplying a mixer input signal connected to a collector and input to each of the third and fourth bases and an output signal of the local buffer amplifier input to each base of the fifth to eighth transistors; A first output terminal for outputting a voltage with little temperature dependence;
At a temperature lower than the set temperature, the voltage is the same as the voltage output from the first output terminal, and at a temperature higher than the set temperature, a second output terminal that outputs a voltage that monotonically decreases with temperature rise is provided. A frequency adjusting circuit, comprising: a voltage adjusting circuit for applying a voltage from the second output terminal to each base of the first to fourth transistors. 2. The temperature-dependence adjusting circuit connects a first resistor, a second resistor, and a plurality of diodes in series between a voltage source having no temperature dependence and ground, and connects the first output terminal to a temperature. Connected to an independent voltage source, the first resistor and the second
Frequency converter according to claim 1 Symbol mounting, characterized in that retrieving the second output terminal from the common contact point and resistance. 3. A first differential transistor constituting a first differential transistor.
And the second transistor, and the first transistor
A first load connected to a collector and the second transistor
A second load connected to the collector of the
Local input to each base of the first and second transistors
And a third and a fourth transistor constituting a second differential transistor.
Transistors and the collector of the third transistor.
From the fifth and sixth transistors that commonly connect the mitter
A third differential transistor and the fourth transistor
7th and 8th connecting each emitter commonly to the collector of the
And a fourth differential transistor comprising
The base of the fifth transistor is connected to the eighth transistor.
A collector of the base of the transistor and the first transistor;
And the base of the sixth transistor is connected to the
The base of the seventh transistor and the second transistor
The collector of the fifth transistor.
And a collector connected to the seventh collector.
Connecting the collector of the transistor to the eighth collector,
Mixer input signal input to each of the third and fourth bases
And input to each base of the fifth to eighth transistors.
Multiplied by the output signal of the local buffer amplifier
A first output terminal for outputting a voltage with little temperature dependence;
At a temperature lower than the set temperature, output from the first output terminal
Voltage that is higher than the set temperature.
Outputs a voltage that decreases monotonically with increasing temperature in degrees
A temperature dependency adjusting circuit having a second output terminal, wherein the voltage from the first output terminal is supplied to the third and fourth transistors.
The voltage is applied to each base of the transistor and the second output terminal
These voltages are applied to respective bases of the first and second transistors.
In the frequency conversion circuit to be applied to the temperature-dependent adjustment circuit, the first and second resistors and a plurality of diodes connected in series between ground and a temperature-independent voltage source, said first output A terminal is connected to a voltage source having no temperature dependency, and the second output terminal is taken out from a common contact between the first resistor and the second resistor.
That frequency conversion circuit. 4. The number of said plurality of diodes is two,
3. The frequency conversion circuit according to claim 2, wherein a resistance value of the first resistor and a resistance value of the second resistor are equal to each other. 5. The number of said plurality of diodes is two,
And the resistance value of the first resistor and the resistance value of the second resistor
Frequency converter according to claim 3, wherein the are equal to each other. 6. The temperature coefficient of said first and second resistors is equal.
Frequency converter according to claim 2, wherein the Shii. 7. The temperature coefficient of the first and second resistors is equal.
Frequency converter according to claim 3 Symbol mounting, characterized in that Shii. 8. The transistor according to claim 8, wherein said diode is a transistor base.
請 characterized in that formed by connecting a scan and collector
The frequency conversion circuit according to claim 2 . 9. The transistor according to claim 9, wherein said diode is a transistor base.
And a collector formed by connecting a collector and a collector.
A frequency conversion circuit according to claim 3 . 10. The transistor of claim 3, wherein said third and fourth transistors have different energy levels.
2. The frequency conversion circuit according to claim 1, wherein a resistor is provided between the mitters . 11. A first differential transistor comprising a first differential transistor.
First and second transistors, and the first transistor
A first load connected to a collector of the second
A second load connected to the collector of the transistor;
Low input to each base of the first and second transistors
And the third and fourth transistors constituting the second differential transistor.
Transistors and the collector of the third transistor.
From the fifth and sixth transistors that commonly connect the mitter
A third differential transistor and the fourth transistor
7th and 8th connecting each emitter commonly to the collector of the
And a fourth differential transistor comprising
The base of the fifth transistor is connected to the eighth transistor.
A collector of the base of the transistor and the first transistor;
And the base of the sixth transistor is connected to the
The base of the seventh transistor and the second transistor
The collector of the fifth transistor.
And a collector connected to the seventh collector.
A collector connected to Njisuta to the collector of the eighth, before
Mixer input signal input to each of the third and fourth bases
And input to each base of the fifth to eighth transistors.
Multiplied by the output signal of the local buffer amplifier
A first output terminal for outputting a voltage with little temperature dependence;
At a temperature lower than the set temperature, output from the first output terminal
Voltage that is higher than the set temperature.
Outputs a voltage that decreases monotonically with increasing temperature in degrees
A temperature dependency adjusting circuit having a second output terminal, wherein the voltage from the first output terminal is supplied to the third and fourth transistors.
The voltage is applied to each base of the transistor and the second output terminal
These voltages are applied to respective bases of the first and second transistors.
In the frequency conversion circuit applied to the first and second transistors, a resistor is provided between the emitters of the third and fourth transistors.
A frequency conversion circuit characterized by being provided . 12. A first and a second transistor constituting a first differential transistor, a first load connected to a drain of the first transistor, and a first load connected to a drain of the second transistor. And a local buffer amplifier for amplifying a local signal input to each gate of the first and second transistors; a third and a fourth transistor forming a second differential transistor; A third differential transistor composed of fifth and sixth transistors having sources commonly connected to the drain of the third transistor, and a seventh and a fourth transistor having sources commonly connected to the drain of the fourth transistor. And a fourth differential transistor consisting of eight transistors,
The gate of the fifth transistor is connected to the gate of the eighth transistor and the drain of the first transistor, and the gate of the sixth transistor is connected to the gate of the seventh transistor and the second transistor. , The drain of the fifth transistor is connected to the seventh drain, the drain of the sixth transistor is connected to the eighth drain, and the third and fourth gates are connected to each other. A mixer input signal to be input;
A mixer circuit for multiplying an output signal of the local buffer amplifier input to each gate of the fifth to eighth transistors, a first output terminal for outputting a voltage with little temperature dependency,
At a temperature lower than the set temperature, the voltage is the same as the voltage output from the first output terminal, and at a temperature higher than the set temperature, a second output terminal that outputs a voltage that monotonically decreases with temperature rise is provided. A frequency adjustment circuit, comprising: a voltage adjustment circuit for applying a voltage from the second output terminal to each gate of the first to fourth transistors. 13. The temperature-dependent adjustment circuit according to claim 1, wherein
A first resistor and a second resistor between the insensitive voltage source and ground;
A plurality of diodes are connected in series, and the first output terminal is connected
Connected to a voltage source having no temperature dependency, the first resistor and the
Take out the second output terminal from a common contact with the second resistor
Frequency converter according to claim 12, wherein the to. 14. A first differential transistor comprising a first differential transistor.
First and second transistors, and the first transistor
A first load connected to the drain of the second
A second load connected to the drain of the transistor;
Low input to each gate of the first and second transistors
And the third and fourth transistors constituting the second differential transistor.
Transistors and the drain of the third transistor.
From the fifth and sixth transistors that connect the source in common.
A third differential transistor, and the fourth transistor
7th and 8th transistors that commonly connect each source to the drain of
And a fourth differential transistor comprising a transistor.
The gate of the fifth transistor is connected to the eighth transistor.
A gate of a transistor and a drain of the first transistor
And the gate of the sixth transistor is connected to the
7 and the second transistor
And the drain of the fifth transistor.
And the sixth transistor is connected to the seventh drain.
Connecting the drain of the transistor to the eighth drain;
A mixer input signal input to each of the third and fourth gates;
Input to each gate of the fifth to eighth transistors
Multiply by the output signal of the local buffer amplifier
A mixer circuit, a first output terminal that outputs a voltage with little temperature dependency,
At a temperature lower than the set temperature , output from the first output terminal
Voltage that is higher than the set temperature.
Outputs a voltage that decreases monotonically with increasing temperature in degrees
A temperature dependency adjusting circuit having a second output terminal, wherein the voltage from the first output terminal is supplied to the third and fourth transistors.
The voltage is applied to each gate of the transistor, and is applied to the second output terminal.
These voltages are applied to the respective gates of the first and second transistors.
In the frequency conversion circuit to be applied to the above, the temperature dependency adjustment circuit is a voltage source having no temperature dependency.
First and second resistors and a plurality of diodes between grounds
Are connected in series, and the first output terminal has no temperature dependency.
Connected to a voltage source, common to the first resistor and the second resistor
Extracting the second output terminal from a contact.
Frequency conversion circuit that. 15. The frequency conversion circuit according to claim 13,
The number of the plurality of diodes is two, and
And the resistance value of the second resistor are equal to each other.
A frequency conversion circuit. 16. The frequency conversion circuit according to claim 14,
The number of the plurality of diodes is two, and
And the resistance value of the second resistor are equal to each other.
A frequency conversion circuit. 17. The temperature coefficient of the first and second resistors is
14. The frequency conversion circuit according to claim 13, wherein:
Road. 18. The temperature coefficient of the first and second resistors is
15. The frequency conversion circuit according to claim 14, wherein:
Road. 19. The transistor of claim 19, wherein the diode is
Characterized by being formed by connecting a gate and a drain
The frequency conversion circuit according to claim 13. 20. The diode according to claim 19, wherein the diode is
Characterized by being formed by connecting a gate and a drain
The frequency conversion circuit according to claim 14. 21. The source and drain of the third and fourth transistors.
13. The device according to claim 12, wherein a resistor is provided between the sources.
Frequency conversion circuit. 22. A semiconductor device comprising a first differential transistor,
First and second transistors, and the first transistor
A first load connected to the drain of the second
A second load connected to the drain of the transistor;
First and second Input to each gate of the transistor
A local buffer amplifier that amplifies the local signal, Third and fourth transistors constituting the second differential transistor
Transistors and the drain of the third transistor.
From the fifth and sixth transistors that connect the source in common.
A third differential transistor, and the fourth transistor
7th and 8th transistors that commonly connect each source to the drain of
And a fourth differential transistor comprising a transistor.
The gate of the fifth transistor is connected to the eighth transistor.
A gate of a transistor and a drain of the first transistor
And the gate of the sixth transistor is connected to the
7 and the second transistor
And the drain of the fifth transistor.
And the sixth transistor is connected to the seventh drain.
Connecting the drain of the transistor to the eighth drain;
A mixer input signal input to each of the third and fourth gates;
Input to each gate of the fifth to eighth transistors
Multiply by the output signal of the local buffer amplifier
Mixer circuit, A first output terminal for outputting a voltage having little temperature dependency,
At a temperature lower than the set temperature, output from the first output terminal
Voltage that is higher than the set temperature.
Outputs a voltage that decreases monotonically with increasing temperature in degrees
A temperature-dependent adjustment circuit having a second output terminal; The voltage from the first output terminal is applied to the third and fourth transistors.
The voltage is applied to each gate of the transistor, and is applied to the second output terminal.
These voltages are applied to the respective gates of the first and second transistors.
In the frequency conversion circuit applied to A resistor is provided between the sources of the third and fourth transistors.
A frequency conversion circuit, characterized in that the frequency conversion circuit is characterized by: