JPS6019310A - High frequency power control circuit - Google Patents

High frequency power control circuit

Info

Publication number
JPS6019310A
JPS6019310A JP58127226A JP12722683A JPS6019310A JP S6019310 A JPS6019310 A JP S6019310A JP 58127226 A JP58127226 A JP 58127226A JP 12722683 A JP12722683 A JP 12722683A JP S6019310 A JPS6019310 A JP S6019310A
Authority
JP
Japan
Prior art keywords
output
amplifier
circuit
attenuator
attenuation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58127226A
Other languages
Japanese (ja)
Other versions
JPH0125246B2 (en
Inventor
Noriyuki Asari
浅利 典幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58127226A priority Critical patent/JPS6019310A/en
Publication of JPS6019310A publication Critical patent/JPS6019310A/en
Publication of JPH0125246B2 publication Critical patent/JPH0125246B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers without distortion of the input signal
    • H03G3/20Automatic control
    • H03G3/30Automatic control in amplifiers having semiconductor devices
    • H03G3/3036Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers

Landscapes

  • Control Of Amplification And Gain Control (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To attain the control of high frequency power with high accuracy by applying cascade connection to PIN diodes to a power amplifier, controlling the attenuation of the 1st PIN diode in response to ambient temperature and controlling the attenuation of the 2nd PIN diode through the output of a detector from the amplifier output. CONSTITUTION:A high frequency signal entering an input terminal 1 in amplified by amplifiers 2 and 3, applied to attenuators 4, 5 comprising PIN diodes, amplified further by amplifiers 6, 7 and outputted from an output terminal 8. Further, a part of an output power is extracted from the amplifier 7, converted into a DC voltage by a detection circuit 9, and then compared with an output voltage of a reference voltage generating circuit 11 by an operational amplifer circuit 10, applied to the attenuator 5 and the part of power is activated in a direction so as to make an output power constant by controlling the attenuation. Further, a temperature detecting circuit 12 outputting a different voltage in response to the change in ambient temperature and a control voltage generating circuit 13 outputting a control voltage through the reception of the output of the circuit 12 are connected to the attenuator 4. The erroneous component not controlled by the attenuator 4 is compensated and the output power is kept constant by extracting a part of the output from the amplifier 7 and controlling the attenuation of the attenuator 5 through the output. Further, neither surplus nor deficiency of output power is produced to an intermittent wave.

Description

【発明の詳細な説明】 本発明は、衛星通信地上局の送信装置等に用いられる高
周波電力増幅器の出力・亀カを安定化する高周波電力制
御回路に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a high frequency power control circuit that stabilizes the output power of a high frequency power amplifier used in a transmitting device of a satellite communication ground station.

マイクロ波や準ミリ波帯の送信装置では1周囲源度の変
動に伴う高周波電力増幅器の高周波出力の変動を少なく
するために高周波電力制御回路が用いられる。従来の高
周波電力制御回路は、高周波電力増幅器の出力の一部を
取り出して検波して直流電圧に変換し、その直流・電圧
が予め設定された基準電圧値となる様に、高周波成力増
幅器とカスケードに接続されたPINタイオードの減衰
量を制御する回路のみで構成されていた。
In a microwave or sub-millimeter wave band transmitting device, a high frequency power control circuit is used to reduce fluctuations in the high frequency output of a high frequency power amplifier due to fluctuations in ambient power. Conventional high-frequency power control circuits extract a part of the output of a high-frequency power amplifier, detect it, and convert it to a DC voltage, and then combine it with a high-frequency product amplifier so that the DC/voltage becomes a preset reference voltage value. It consisted only of a circuit that controlled the attenuation of PIN diodes connected in cascade.

この従来の高周波・電力制御回路では、高周波jib。In this conventional high frequency/power control circuit, high frequency jib.

力増幅器の利得が大きい場合には当然に周囲温度変動に
よる利得変動も大きくなるから、1)INダイオードも
減衰量のダイナミックレンジの太きいものが必要となる
いところが、ダイナミックレンジの大きいPINダイオ
ードにより出力電力を精度よく制御するには、高周波電
力制御回路が複雑になる。又、高周波電力制御回路の閉
ループ利1’Jを大きくとらなければならないから、高
周波iC力増幅器が増幅している信号が連続波ではなく
パルス状の断続波である場合、そのパルスの立ち上がり
時に於ける高周波電力制御回路の応答速度が度度問題と
なり、出力電力の出すぎあるいは不足等によりその高周
波電力増幅器が挿入しである回線の品質を低下させる。
If the gain of the power amplifier is large, the gain fluctuation due to ambient temperature fluctuations will naturally be large. In order to accurately control output power, a high frequency power control circuit becomes complex. Furthermore, since the closed loop gain 1'J of the high frequency power control circuit must be large, if the signal being amplified by the high frequency iC power amplifier is not a continuous wave but a pulsed intermittent wave, the The response speed of the high-frequency power control circuit used in the high-frequency power amplifier becomes a frequent problem, and the quality of the line in which the high-frequency power amplifier is inserted deteriorates due to excessive or insufficient output power.

本発明の目的は、高周波電力の制御が精度よく行なえる
高周波電力制御回路の提供にある。
An object of the present invention is to provide a high frequency power control circuit that can control high frequency power with high precision.

本発明による高周波電力制御回路は、高周波・成力増幅
器にそれぞれカスケードに接続しである第1及び第2の
PINダイオードと、周囲温度による前記高周波′電力
増幅器の利得変動を補う方向に前記周囲温度に応じて前
記第10PINダイオードの減衰量を制御する回路と、
前記高周波電力増幅器の出力の一部を検波する検波器と
、この検波器出力が予め定めた基準値に近接する方向に
前記第2のI) I Nダイオードの減衰量を制御する
回路とを備えて構成される。
The high-frequency power control circuit according to the present invention includes first and second PIN diodes connected in cascade to a high-frequency power amplifier, and a high-frequency power control circuit that adjusts the ambient temperature to compensate for gain fluctuations of the high-frequency power amplifier due to ambient temperature. a circuit that controls the amount of attenuation of the tenth PIN diode according to;
A detector that detects a part of the output of the high-frequency power amplifier, and a circuit that controls the amount of attenuation of the second I) I N diode in a direction in which the output of the detector approaches a predetermined reference value. It consists of

次に図面を参照して本発明の詳細な説明する。Next, the present invention will be described in detail with reference to the drawings.

第1図は本発明の一実施例を示すブロック図である。入
力端子1に入った高周波信号は増幅器2゜増幅器3によ
り増幅され、PINダイオードによる減衰器4及び5に
加えられ、更に増幅器6及び7により増幅され出力端子
8から出力される。又、出力電力の一部は、増幅器7よ
り取り出され、検波回路9により直流電圧に変換された
後、演算増幅回路10により基準電圧発生回路11の出
力電圧と比較され、減衰器5に加えられ、減衰量を制御
して出力電力を一定にする方向に作用する6更に、減衰
器4には1周囲温度の変化に対応して異なる電圧を出力
する温度検出回路12及びその出力を受けて、制御電圧
を出力する制御電圧発生回路13が接続されている。
FIG. 1 is a block diagram showing one embodiment of the present invention. A high frequency signal input to input terminal 1 is amplified by amplifier 2 and amplifier 3, applied to attenuators 4 and 5 using PIN diodes, further amplified by amplifiers 6 and 7, and output from output terminal 8. A part of the output power is taken out from the amplifier 7 and converted into a DC voltage by the detection circuit 9, and then compared with the output voltage of the reference voltage generation circuit 11 by the operational amplifier circuit 10 and added to the attenuator 5. , which acts in the direction of controlling the amount of attenuation and making the output power constant 6 Furthermore, the attenuator 4 includes a temperature detection circuit 12 that outputs different voltages in response to changes in ambient temperature; A control voltage generation circuit 13 that outputs a control voltage is connected.

減衰器4の減衰量は、検波回路9.演算増幅回路IO及
び減衰器5が接続されていない場合に、増幅器2. 3
. 6及び7において起こる周囲温度の変化に伴う利得
変動予想値の大部分が温度補償できる様に、制御電圧発
生回路13により予め設定されている。従って、減衰器
5による?It制御回路がない場合に於いても、増幅器
2. 3. 6. 7全体の出力電力変動は減衰器4に
よる制御を行なわない場合に比較して十分少なくなって
いる、しかしながら、減衰器4のみによる制御では増幅
器の温度利得の不均二性等により精度よく出力電力を一
定に保つ事は難しい。そこで、前記の如く、増幅器7よ
り出力の一部を取り出し、この出力により減衰器5の減
衰量を制御して減衰器4により制御しきれなかった誤差
分を補ない出力電力を一定に保つ。
The amount of attenuation of the attenuator 4 is determined by the detection circuit 9. When operational amplifier circuit IO and attenuator 5 are not connected, amplifier 2. 3
.. The control voltage generation circuit 13 presets most of the expected gain fluctuations due to changes in the ambient temperature that occur in 6 and 7 so that the temperature can be compensated for. Therefore, by attenuator 5? Even in the absence of an It control circuit, the amplifier 2. 3. 6. The overall output power fluctuation of 7 is sufficiently small compared to the case without control using attenuator 4. However, control using only attenuator 4 can accurately control the output power due to the non-uniformity of the temperature gain of the amplifier, etc. It is difficult to keep constant. Therefore, as described above, a part of the output is taken out from the amplifier 7, and the amount of attenuation of the attenuator 5 is controlled by this output to keep the output power constant without compensating for the error that could not be fully controlled by the attenuator 4.

この実施例によれば、減衰器5のダイナミックレンジは
、前記の誤差分を補なう程度で足りるから、制御回路は
非常に簡単になる。又、断続波の伝送時に於いても、減
衰器5のダイナミックレンジカ狭いから、前述のパルス
の立ち上がり時の出力電力の出退ぎあるいは、不足等の
問題がほとんど皆無になる。
According to this embodiment, the dynamic range of the attenuator 5 is sufficient to compensate for the above-mentioned error, so the control circuit becomes very simple. Furthermore, even when transmitting an intermittent wave, since the dynamic range of the attenuator 5 is narrow, the above-mentioned problem of output power fluctuation or shortage at the rise of a pulse is virtually eliminated.

以上説明したように1本発明によれば、高周波電力の制
御が精度よく行える高周波′電力制御回路が提供できる
As explained above, according to the present invention, a high frequency power control circuit that can control high frequency power with high accuracy can be provided.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示すブロック図である。 1・・・・・・入力端子、2.3.6.7・・・・・・
増幅器、4゜5・・・・・・PINダイオード減衰器、
8・・・・・・出力端子、9・・・・・・検波回路、1
0・・・・・・演算増幅回路、11・・・・・・基準電
圧発生回路、12・・・・・温度検出回路。 13・・・・・・制御電圧発生回路。 皿 ゛ 代理人 弁理士 内 yKF+1 、ノ
FIG. 1 is a block diagram showing one embodiment of the present invention. 1...Input terminal, 2.3.6.7...
Amplifier, 4゜5...PIN diode attenuator,
8... Output terminal, 9... Detection circuit, 1
0... operational amplifier circuit, 11... reference voltage generation circuit, 12... temperature detection circuit. 13... Control voltage generation circuit. Plate ゛Representative Patent Attorney yKF+1,ノ

Claims (1)

【特許請求の範囲】 高周波成力増幅器にそれぞれカスケードに接続しである
第1及び第20PINダイオードと、周囲温度による前
記高周波電力増幅器の利得変動を補う方向に前記周囲温
度に応じて前記第10PINダイオードの減衰量を制御
する回路と、前記高周波成力増幅器の出力の一部を検波
する検波器と。 この検波器出力が予め定めた基準値に近接する方向に前
記第20PINダイオードの減衰量を制御する回路とを
備える高周波電力制御回路。
[Scope of Claims] First and 20th PIN diodes each connected in cascade to a high frequency power amplifier, and a 10th PIN diode that is connected in accordance with the ambient temperature in a direction to compensate for gain fluctuations of the high frequency power amplifier due to ambient temperature. a circuit for controlling the amount of attenuation of the high-frequency power amplifier; and a detector for detecting a part of the output of the high-frequency product amplifier. and a circuit for controlling the amount of attenuation of the 20th PIN diode in a direction in which the detector output approaches a predetermined reference value.
JP58127226A 1983-07-13 1983-07-13 High frequency power control circuit Granted JPS6019310A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58127226A JPS6019310A (en) 1983-07-13 1983-07-13 High frequency power control circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58127226A JPS6019310A (en) 1983-07-13 1983-07-13 High frequency power control circuit

Publications (2)

Publication Number Publication Date
JPS6019310A true JPS6019310A (en) 1985-01-31
JPH0125246B2 JPH0125246B2 (en) 1989-05-17

Family

ID=14954847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58127226A Granted JPS6019310A (en) 1983-07-13 1983-07-13 High frequency power control circuit

Country Status (1)

Country Link
JP (1) JPS6019310A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5446142U (en) * 1977-09-07 1979-03-30
JPS54157582A (en) * 1978-06-02 1979-12-12 Nippon Chemiphar Co Ltd Dibenzoxepin derivative and its preparation
JPS63296506A (en) * 1987-05-28 1988-12-02 Matsushita Electric Ind Co Ltd Temperature compensation circuit
EP0397445A2 (en) * 1989-05-12 1990-11-14 Nokia Mobile Phones Ltd. Procedure for forming low power levels in a radio telephone transmitter
EP0397401A2 (en) * 1989-05-12 1990-11-14 Nokia Mobile Phones Ltd. Circuit for forming low power levels in a transmitter of a radio telephone
EP0570897A2 (en) * 1992-05-20 1993-11-24 Robert Bosch Gmbh Device for delivering an attenuator control signal

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5446142U (en) * 1977-09-07 1979-03-30
JPS5734313Y2 (en) * 1977-09-07 1982-07-28
JPS54157582A (en) * 1978-06-02 1979-12-12 Nippon Chemiphar Co Ltd Dibenzoxepin derivative and its preparation
JPS6159314B2 (en) * 1978-06-02 1986-12-16 Nippon Chemiphar Co
JPS63296506A (en) * 1987-05-28 1988-12-02 Matsushita Electric Ind Co Ltd Temperature compensation circuit
EP0397445A2 (en) * 1989-05-12 1990-11-14 Nokia Mobile Phones Ltd. Procedure for forming low power levels in a radio telephone transmitter
EP0397401A2 (en) * 1989-05-12 1990-11-14 Nokia Mobile Phones Ltd. Circuit for forming low power levels in a transmitter of a radio telephone
EP0570897A2 (en) * 1992-05-20 1993-11-24 Robert Bosch Gmbh Device for delivering an attenuator control signal
EP0570897A3 (en) * 1992-05-20 1995-01-04 Ant Nachrichtentech Device for delivering an attenuator control signal.

Also Published As

Publication number Publication date
JPH0125246B2 (en) 1989-05-17

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