JPH0125246B2 - - Google Patents
Info
- Publication number
- JPH0125246B2 JPH0125246B2 JP58127226A JP12722683A JPH0125246B2 JP H0125246 B2 JPH0125246 B2 JP H0125246B2 JP 58127226 A JP58127226 A JP 58127226A JP 12722683 A JP12722683 A JP 12722683A JP H0125246 B2 JPH0125246 B2 JP H0125246B2
- Authority
- JP
- Japan
- Prior art keywords
- frequency power
- circuit
- output
- attenuator
- attenuation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000013459 approach Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
- H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
Landscapes
- Control Of Amplification And Gain Control (AREA)
- Amplifiers (AREA)
Description
【発明の詳細な説明】
本発明は、衛星通信地上局の送信装置等に用い
られる高周波電力増幅器の出力電力を安定化する
高周波電力制御回路に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a high frequency power control circuit that stabilizes the output power of a high frequency power amplifier used in a transmitting device of a satellite communication ground station.
マイクロ波や準ミリ波帯の送信装置では、周囲
温度の変動に伴う高周波電力増幅器の高周波出力
の変動を少なくするために高周波電力制御回路が
用いられる。従来の高周波電力制御回路は、高周
波電力増幅器の出力の一部を取り出して検波して
直流電圧に変換し、その直流電圧が予め設定され
た基準電圧値となる様に、高周波電力増幅器とカ
スケードに接続されたPINダイオードの減衰量を
制御する回路のみで構成されていた。 In microwave and quasi-millimeter wave band transmitting devices, high-frequency power control circuits are used to reduce fluctuations in the high-frequency output of high-frequency power amplifiers due to changes in ambient temperature. Conventional high-frequency power control circuits extract a portion of the output of a high-frequency power amplifier, detect it, convert it to a DC voltage, and connect it in cascade with the high-frequency power amplifier so that the DC voltage becomes a preset reference voltage value. It consisted only of a circuit that controlled the attenuation of the connected PIN diode.
この従来の高周波電力制御回路では、高周波電
力増幅器の利得が大きい場合には当然に周囲温度
変動による利得変動も大きくなるから、PINダイ
オードも減衰量のダイナミツクレンジの大きいも
のが必要となる。ところが、ダイナミツクレンジ
の大きいPINダイオードにより出力電力を精度よ
く制御するには、高周波電力制御回路が複雑にな
る。又、高周波電力制御回路の閉ループ利得を大
きくとらなければならないから、高周波電力増幅
器が増幅している信号が連続波ではなくパルス状
の断続波である場合、そのパルスの立ち上がり時
に於ける高周波電力制御回路の応答速度が度度問
題となり、出力電力の出すぎあるいは不足等によ
りその高周波電力増幅器が挿入してある回線の品
質を低下させる。 In this conventional high-frequency power control circuit, if the gain of the high-frequency power amplifier is large, the gain fluctuation due to ambient temperature fluctuations will naturally be large, so the PIN diode must also have a large dynamic range of attenuation. However, in order to precisely control the output power using a PIN diode with a large dynamic range, the high-frequency power control circuit becomes complex. Also, since the closed loop gain of the high frequency power control circuit must be large, if the signal being amplified by the high frequency power amplifier is not a continuous wave but a pulsed intermittent wave, the high frequency power control at the rise of the pulse is difficult. The response speed of the circuit often becomes a problem, and the quality of the line in which the high-frequency power amplifier is inserted deteriorates due to excessive or insufficient output power.
本発明の目的は、高周波電力の制御が精度よく
行なえる高周波電力制御回路の提供にある。 An object of the present invention is to provide a high frequency power control circuit that can control high frequency power with high precision.
本発明による高周波電力制御回路は、高周波電
力増幅器にそれぞれカスケードに接続してある第
１及び第２のPINダイオードと、周囲温度による
前記高周波電力増幅器の利得変動を補う方向に前
記周囲温度に応じて前記第１のPINダイオードの
減衰量を制御する回路と、前記高周波電力増幅器
の出力の一部を検波する検波器と、この検波器出
力が予め定めた基準値に近接する方向に前記第２
のPINダイオードの減衰量を制御する回路とを備
えて構成される。 The high-frequency power control circuit according to the present invention includes first and second PIN diodes each connected in cascade to a high-frequency power amplifier, and a high-frequency power control circuit that operates according to the ambient temperature to compensate for gain fluctuations of the high-frequency power amplifier due to ambient temperature. a circuit that controls the amount of attenuation of the first PIN diode; a detector that detects a part of the output of the high-frequency power amplifier; and a circuit that controls the attenuation of the first PIN diode;
and a circuit for controlling the attenuation amount of the PIN diode.
次に図面を参照して本発明を詳細に説明する。 Next, the present invention will be explained in detail with reference to the drawings.
第１図は本発明の一実施例を示すブロツク図で
ある。入力端子１に入つた高周波信号は増幅器
２、増幅器３により増幅され、PINダイオードに
よる減衰器４及び５に加えられ、更に増幅器６及
び７により増幅され出力端子８から出力される。
又、出力電力の一部は、増幅器７より取り出さ
れ、検波回路９により直流電圧に変換された後、
演算増幅回路１０により基準電圧発生回路１１の
出力電圧と比較され、減衰器５に加えられ、減衰
量を制御して出力電力を一定にする方向に作用す
る。更に、減衰器４には、周囲温度の変化に対応
して異なる電圧を出力する温度検出回路１２及び
その出力を受けて、制御電圧を出力する制御電圧
発生回路１３が持続されている。 FIG. 1 is a block diagram showing one embodiment of the present invention. A high frequency signal input to input terminal 1 is amplified by amplifiers 2 and 3, applied to attenuators 4 and 5 using PIN diodes, further amplified by amplifiers 6 and 7, and output from output terminal 8.
A part of the output power is taken out from the amplifier 7 and converted into a DC voltage by the detection circuit 9, and then
It is compared with the output voltage of the reference voltage generation circuit 11 by the operational amplifier circuit 10, and is applied to the attenuator 5, which controls the amount of attenuation and acts to keep the output power constant. Further, the attenuator 4 includes a temperature detection circuit 12 that outputs different voltages in response to changes in ambient temperature, and a control voltage generation circuit 13 that outputs a control voltage in response to the output thereof.
減衰器４の減衰量は、検波回路９、演算増幅回
路１０及び減衰器５が接続されていない場合に、
増幅器２，３，６及び７において起こる周囲温度
の変化に伴う利得変動予想値の大部分が温度補償
できる様に、制御電圧発生回路１３により予め設
定されている。従つて、減衰器５による制御回路
がない場合に於いても、増幅器２，３，６，７全
体の出力電力変動は減衰器４による制御を行なわ
ない場合に比較して十分少なくなつている。しか
しながら、減衰器４のみによる制御では増幅器の
温度利得の不均一性等により精度よく出力電力を
一定に保つ事は難しい。そこで、前記の如く、増
幅器７より出力の一部を取り出し、この出力によ
り減衰器５の減衰量を制御して減衰器４により制
御しきれなかつた誤差分を補ない出力電力を一定
に保つ。 The amount of attenuation of the attenuator 4 is as follows when the detection circuit 9, the operational amplifier circuit 10, and the attenuator 5 are not connected.
The control voltage generation circuit 13 presets most of the expected gain fluctuations caused by changes in ambient temperature in the amplifiers 2, 3, 6, and 7 so that the temperature can be compensated for. Therefore, even when the control circuit using the attenuator 5 is not provided, the fluctuation in the output power of the amplifiers 2, 3, 6, and 7 as a whole is sufficiently reduced compared to the case where the control using the attenuator 4 is not performed. However, with control using only the attenuator 4, it is difficult to accurately keep the output power constant due to non-uniformity of the temperature gain of the amplifier. Therefore, as described above, a part of the output is taken out from the amplifier 7, and the amount of attenuation of the attenuator 5 is controlled by this output to maintain a constant output power that compensates for the error that cannot be fully controlled by the attenuator 4.
この実施例によれば、減衰器５のダイナミツク
レンジは、前記の誤差分を補なう程度で足りるか
ら、制御回路は非常に簡単になる。又、断続波の
伝送時に於いても、減衰器５のダイナミツクレン
ジが狭いから、前述のパルスの立ち上がり時の出
力電力の出過ぎあるいは、不足等の問題がほとん
ど皆無になる。 According to this embodiment, the dynamic range of the attenuator 5 is sufficient to compensate for the above-mentioned error, so the control circuit becomes very simple. Furthermore, even when transmitting an intermittent wave, since the dynamic range of the attenuator 5 is narrow, the above-mentioned problems such as excessive or insufficient output power at the rise of the pulse are virtually eliminated.
以上説明したように、本発明によれば、高周波
電力の制御が精度よく行える高周波電力制御回路
が提供できる。 As described above, according to the present invention, it is possible to provide a high frequency power control circuit that can accurately control high frequency power.
第１図は本発明の一実施例を示すブロツク図で
ある。
１……入力端子、２，３，６，７……増幅器、
４，５……PINダイオード減衰器、８……出力端
子、９……検波回路、１０……演算増幅回路、１
１……基準電圧発生回路、１２……温度検出回
路、１３……制御電圧発生回路。
FIG. 1 is a block diagram showing one embodiment of the present invention. 1...Input terminal, 2, 3, 6, 7...Amplifier,
4, 5...PIN diode attenuator, 8...Output terminal, 9...Detection circuit, 10...Operation amplifier circuit, 1
1...Reference voltage generation circuit, 12...Temperature detection circuit, 13...Control voltage generation circuit.
Claims (1)
続してある第１及び第２のPINダイオードと、周
囲温度による前記高周波電力増幅器の利得変動を
補う方向に前記周囲温度に応じて前記第１のPIN
ダイオードの減衰量を制御する回路と、前記高周
波電力増幅器の出力の一部を検波する検波器と、
この検波器出力が予め定めた基準値に近接する方
向に前記第２のPINダイオードの減衰量を制御す
る回路とを備える高周波電力制御回路。1 first and second PIN diodes each connected in cascade to a high frequency power amplifier;
a circuit that controls the amount of attenuation of the diode; a detector that detects a portion of the output of the high-frequency power amplifier;
a circuit for controlling the amount of attenuation of the second PIN diode in a direction in which the detector output approaches a predetermined reference value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58127226A JPS6019310A (en) | 1983-07-13 | 1983-07-13 | High frequency power control circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58127226A JPS6019310A (en) | 1983-07-13 | 1983-07-13 | High frequency power control circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6019310A JPS6019310A (en) | 1985-01-31 |
| JPH0125246B2 true JPH0125246B2 (en) | 1989-05-17 |
Family
ID=14954847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58127226A Granted JPS6019310A (en) | 1983-07-13 | 1983-07-13 | High frequency power control circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6019310A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5734313Y2 (en) * | 1977-09-07 | 1982-07-28 | ||
| JPS54157582A (en) * | 1978-06-02 | 1979-12-12 | Nippon Chemiphar Co Ltd | Dibenzoxepin derivative and its preparation |
| JP2543079B2 (en) * | 1987-05-28 | 1996-10-16 | 松下電器産業株式会社 | Amplifier temperature compensation circuit |
| FI81931C (en) * | 1989-05-12 | 1990-12-10 | Nokia Mobira Oy | Method of generating low power levels in the transmitter of a radiotelephone |
| FI82796C (en) * | 1989-05-12 | 1991-04-10 | Nokia Mobira Oy | KOPPLING FOER ALSTRING AV LAOGA EFFEKTNIVAOER I SAENDAREN AV EN RADIOTELEFON. |
| DE4216646C1 (en) * | 1992-05-20 | 1994-01-27 | Ant Nachrichtentech | Arrangement for providing an actuating signal for an attenuator |
-
1983
- 1983-07-13 JP JP58127226A patent/JPS6019310A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6019310A (en) | 1985-01-31 |
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