JPS6329509A - Formation of coating film - Google Patents
Formation of coating filmInfo
- Publication number
- JPS6329509A JPS6329509A JP17153586A JP17153586A JPS6329509A JP S6329509 A JPS6329509 A JP S6329509A JP 17153586 A JP17153586 A JP 17153586A JP 17153586 A JP17153586 A JP 17153586A JP S6329509 A JPS6329509 A JP S6329509A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- coating film
- coating
- film
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 24
- 239000011248 coating agent Substances 0.000 title claims abstract description 23
- 230000015572 biosynthetic process Effects 0.000 title claims description 3
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 5
- 239000004642 Polyimide Substances 0.000 abstract description 4
- 229920001721 polyimide Polymers 0.000 abstract description 4
- 239000008188 pellet Substances 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 230000002950 deficient Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 1
- 206010025482 malaise Diseases 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Landscapes
- Application Of Or Painting With Fluid Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置圧用いられる樹脂膜あるいは無機膜
の塗布膜の形成方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming a coating film of a resin film or an inorganic film used in semiconductor devices.
樹脂被膜の形成方法として、例えば公開特許公報昭58
−42240に示されるように、被膜形成面の周辺部の
所定範囲をマイナスの傾斜面とした基板を用い、この基
板に樹脂溶液を回転塗布した後に硬化処理する樹脂被膜
の形成方法がある。As a method for forming a resin film, for example, Japanese Patent Publication No. 1983
As shown in No. 42240, there is a method of forming a resin film, which uses a substrate in which a predetermined area around the surface on which the film is to be formed has a negative slope, and spin-coats a resin solution onto the substrate and then performs a curing process.
上記従来技術は樹脂溶液を基板上に回転塗布する際、第
1図に示すような基板1の周辺部に生じる樹脂の盛上が
り部3を、第2図に示すような基板1の周辺に設けた面
取り部4で吸収するものであり、面取りによる基板価格
の上昇及び基板周辺部の製品歩留りの低下、不良品混入
による製品品質の低下に対する対策については考慮され
ていない。In the above-mentioned conventional technology, when a resin solution is spin-coated onto a substrate, a resin bulge 3 that is generated around the periphery of the substrate 1 as shown in FIG. This is absorbed by the chamfered portion 4, and no consideration is given to countermeasures against an increase in the board price due to chamfering, a decrease in product yield in the peripheral area of the board, and a decrease in product quality due to the inclusion of defective products.
本発明の目的は、上記従来技術の問題点を解決した基板
周辺の塗布膜の盛上がりをなくす塗布膜の形成方法を提
供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for forming a coating film that eliminates the build-up of the coating film around a substrate, which solves the problems of the prior art described above.
上記目的は、基板周辺の所定の範囲に段差を設けて周辺
部を低くすることにより達成される。The above object is achieved by providing a step in a predetermined range around the substrate to lower the peripheral portion.
基板周辺部に設けられた段差部は、回転塗布によって生
じた塗布膜の盛上がりを段差寸法の分だけ相対的に少な
くするように作用する。それによって基板上の塗布膜が
平坦化され、密着露光におけるホトマスクとの密着性が
向上し、解像性が良くなって微細加工が可能となる。The step portion provided at the peripheral portion of the substrate functions to relatively reduce the buildup of the coating film caused by spin coating by the step size. As a result, the coating film on the substrate is flattened, the adhesion with the photomask during contact exposure is improved, resolution is improved, and fine processing becomes possible.
以下、本発明の実施例を第3図ないし第6図により説明
する。Embodiments of the present invention will be described below with reference to FIGS. 3 to 6.
実施例1゜
基板1として第3図に示したように周辺から寸法dの範
囲及び寸法dの範囲でペレットを除去した場合にペレッ
ト欠けを生じるペレットを除去した下地基板を用いる。Example 1 As the substrate 1, as shown in FIG. 3, a base substrate is used from which pellets, which would cause chipping when pellets are removed from the periphery in a range of dimensions d and d, are removed.
このような下地基板は栗初のホトリン工程から、この目
的に合ったホトマスクを用いて作製する。Such a base substrate is manufactured using a photomask suitable for this purpose from Kuriha's photorin process.
次に基板1の表面に第4図に示すように塗布膜として、
例えば感光性ポリイミド材photo PAL、’1o
oo(商品名9日立化成社製)を400Orpm 。Next, as a coating film on the surface of the substrate 1 as shown in FIG.
For example, photosensitive polyimide material photo PAL, '1o
oo (trade name 9 manufactured by Hitachi Chemical Co., Ltd.) at 400 rpm.
30秒の条件で回転塗布し、これを85℃、20分の条
件でプリベークすると膜厚的5μmの塗布膜5が形成さ
れ、周辺部に高さ約2μmの盛上がり部3を生じるが、
段差部6が約3μm低くなっているため盛上がりを吸収
出来る。When spin coating is performed for 30 seconds and prebaked at 85° C. for 20 minutes, a coating film 5 with a thickness of 5 μm is formed, and a raised portion 3 with a height of approximately 2 μm is generated in the peripheral area.
Since the stepped portion 6 is lowered by about 3 μm, the bulge can be absorbed.
本実施例によれば、基板に塗布膜を回転塗布する際に基
板周辺に生じる盛上がりの影響がなくなり、密着露光時
における基板とホトマスクの密着性が良くなりパターン
解像性が向上し、微細加工が可能となる。According to this example, the influence of the bulge that occurs around the substrate when spin-coating the coating film on the substrate is eliminated, and the adhesion between the substrate and the photomask during contact exposure is improved, pattern resolution is improved, and microfabrication is achieved. becomes possible.
実施例λ
基板1として第5図に示したように周辺のベレツト欠け
を生じるペレットを除去した下地基板を用いる。このよ
うな下地基板は最初のホトリン工程から、この目的に合
ったホトマスクを用いて作製する。Example λ As the substrate 1, as shown in FIG. 5, a base substrate from which pellets causing beret chipping around the periphery have been removed is used. Such a base substrate is manufactured from the initial photorin process using a photomask suitable for this purpose.
次に基板1の表面に第6図に示すように塗布膜として、
例えば感光性ポリイミド材photo PALlooo
(商品名1日立化成社製)を4000rpm。Next, as a coating film on the surface of the substrate 1 as shown in FIG.
For example, photosensitive polyimide material photo PALloooo
(Product name 1 manufactured by Hitachi Chemical Co., Ltd.) at 4000 rpm.
30秒の条件で回転塗布し、これを85℃、20分の条
件でプリベークすると膜厚的5μmの塗布膜5が形成さ
れ、周辺部に高さ約2μmの盛上がり部3を生じるが、
段差部6が約6μm低くなっているため盛上がりを吸収
出来る。When spin coating is performed for 30 seconds and prebaked at 85° C. for 20 minutes, a coating film 5 with a thickness of 5 μm is formed, and a raised portion 3 with a height of approximately 2 μm is generated in the peripheral area.
Since the stepped portion 6 is lowered by about 6 μm, it is possible to absorb the bulge.
本実施例によれば、基板に塗布膜を回転塗布する際に基
板周辺に生じる盛上がりの影響がなくなり、密着露光時
における基板とホトマスクの密着性が良くなり、パター
ン解像性が向上し、微細加工が可能となる。しかも、基
板周辺で最初から除去するペレットは形成したとしても
ペレット欠けを生じて製品とならないものであり、歩留
りの低下の心配はなく、しかも、不良ペレット混入の可
能性も少なくなる効果もある。According to this example, the influence of the bulge that occurs around the substrate when a coating film is spin coated on the substrate is eliminated, the adhesion between the substrate and the photomask is improved during contact exposure, pattern resolution is improved, and fine Processing becomes possible. Furthermore, even if the pellets that are removed from the beginning around the substrate are formed, they will be chipped and will not become a product, so there is no need to worry about a drop in yield, and there is also the effect of reducing the possibility of defective pellets being mixed in.
なお実施例では感光性ポリイミド材料を回転塗布する場
合を想定したが、材料は有機材料に限らず、塗布方法も
回転塗布に限定するものではない。In the examples, it is assumed that the photosensitive polyimide material is spin-coated, but the material is not limited to organic materials, and the coating method is not limited to spin-coating.
本ゝ発明によれば、基板のコストup々しに、半導体等
の微細加工が可能となり、製品歩留シの向上及び不良品
混入をなくす効果がある。According to the present invention, microfabrication of semiconductors and the like can be performed without increasing the cost of substrates, and has the effect of improving product yield and eliminating the mixing of defective products.
第1図は従来例の断面図及びその部分拡大図、第2図は
公知例の断面図及びその部分拡大図である。第3図は本
発明の実施列1の平面図及びその部分拡大図、第4図は
第3図の断面図及びその部分拡大図である。
第5図は本発明の実施例2の平面図及びその部分拡大図
、第6図は第5図の断面図及びその部分拡大図である。
1・・・・・・基板
6・・・・・・盛上がり部
5・・・・・・塗布膜
6・・・・・・段差部
7・・・・・・ペレット
□N。
l\
代理人 弁理士 小川勝勇、 2.1
第 1 図
(α)(b)
児 2図
C(1)(b)
5;ゲ操蛎 6:!Lゑ酔
第 8図
(へ)(b)
第4図
(へ)(b)
5;14眼 6.杖先部
第 51¥]
(α) (b)
1 −1 ’)pFl=、 zo ;1ミ
引)’I:13 、 盛り上か′す9 4− 面)
、°)苦い第 6図
(α)(b)
1 : 」ト 本5.. 2
: J!’(8旨 A臭3、益すヱがり吉P 4
:面瓶り害曾手続補正書(自発)
事件の表示
昭和 61 年特許願第 171555号発明の名称
塗布膜の形成方法
補正をする者
11件との関係 特 許 出 願 人名 称
’5101株式会リ 日す 立 衷 作所代
理 人
補正の内容
1、 明細書第2頁、第10行目の「第1図」を、「第
5図」に訂正する。
2 明細書第2頁、第11行目の「第2図」を、「第6
図」に訂正する。
五 明細書第3頁、第11行目の「第3図ないし第6図
」を、「第1図ないし第4図Jに訂正する。
4、 明細書第3頁、第14行目の「第3図」を、「第
1図」に訂正する。
1 明細書第3頁、第18行目の「ホトリン」を礒。
「ホトリソ」K訂正する。
& 明細書第3頁、第20行目の「第4図」を、「第2
図」に訂正する。
7、 明細書第4頁、第1 行[’) IP”OtO
PAL/Jヲ。
gFioio −PAL J K ’ET 正する。
& 明細書第4頁、第14行目の「第5図」を、「第6
図」に訂正する。
9 明細書第4頁、第16行目の「ホトリン」を、「ホ
トリソ」に訂正する。
1[L 明細書第4頁、第19行目の「第6図」を、
「第4図」に訂正する。
11、明細書第4頁、第20行の臣んoto p厄」を
、L;、/’A o t o−PAL Jに訂正する。
12、明細書第6頁、第4行目から第11行目を、以下
のように訂正する。
「第1図は本発明の実施例1の平面図及びその部分拡大
図、第2図は第1図の断面図及びその部分拡大図、第3
図は本発明の実施例2の平面図及びその部分拡大図、第
4図は第3図の断面図及びその部分拡大図、第5図は従
来例の断面図及びその拡大図、第6図は公知例の断面図
及びその部分拡大図である。」
以 上FIG. 1 is a sectional view and a partially enlarged view of a conventional example, and FIG. 2 is a sectional view and a partially enlarged view of a known example. 3 is a plan view and a partially enlarged view of the embodiment row 1 of the present invention, and FIG. 4 is a sectional view of FIG. 3 and a partially enlarged view thereof. 5 is a plan view and a partially enlarged view of Embodiment 2 of the present invention, and FIG. 6 is a sectional view of FIG. 5 and a partially enlarged view thereof. 1... Substrate 6... Raised portion 5... Coating film 6... Stepped portion 7... Pellet □N. l\ Agent Patent attorney Katsuyu Ogawa, 2.1 Figure 1 (α) (b) Child 2 Figure C (1) (b) 5; Gesouhagi 6:! L-sickness Figure 8 (see) (b) Figure 4 (see) (b) 5; 14 eyes 6. Cane tip No. 51¥] (α) (b) 1-1') pFl=, zo; 1 mi subtraction)'I:13, raised surface 94-)
, °) Bitter Figure 6 (α) (b) 1: ``To Book 5. .. 2
: J! '(8 effects A smell 3, Masuegarikichi P 4
:Amendment of procedure for causing damage to face bottles (voluntary) Indication of the case Showa 61 Patent Application No. 171555 Title of the invention Relationship with the 11 cases of persons making amendments to the coating film formation method Patent application Person name Title
'5101 Stock Co. Ltd. Contents of Amendment 1: ``Figure 1'' on page 2, line 10 of the specification is corrected to ``Figure 5''. 2 "Figure 2" on page 2, line 11 of the specification was replaced with "Figure 6".
Corrected to ``Figure''. 5. “Figures 3 to 6” on page 3, line 11 of the specification are corrected to “Figures 1 to 4 J.” 4. "Figure 3" is corrected to "Figure 1." 1. Use "Photorin" on page 3, line 18 of the specification. "Photolithography" K corrects. & Change “Figure 4” on page 3, line 20 of the specification to “Second
Corrected to ``Figure''. 7. Page 4 of the specification, line 1 [') IP”OtO
PAL/Jwo. gFioio -PAL J K'ET Correct. & Change “Figure 5” on page 4, line 14 of the specification to “Figure 6”
Corrected to ``Figure''. 9 "Photorin" on page 4, line 16 of the specification is corrected to "Photoliso". 1 [L "Figure 6" on page 4, line 19 of the specification,
Corrected to "Figure 4". 11. On page 4 of the specification, line 20, ``Oto p trouble'' is corrected to L;, /'A oto-PAL J. 12. On page 6 of the specification, lines 4 to 11 are corrected as follows. 1 is a plan view and a partially enlarged view of Embodiment 1 of the present invention, FIG. 2 is a sectional view of FIG. 1 and a partially enlarged view thereof, and FIG.
The figures are a plan view and a partially enlarged view of Embodiment 2 of the present invention, FIG. 4 is a cross-sectional view of FIG. 3 and a partially enlarged view thereof, FIG. 5 is a cross-sectional view of the conventional example and an enlarged view thereof, and FIG. These are a sectional view and a partially enlarged view of a known example. "that's all
Claims (1)
分割するための分割溝を有する基板において、基板周辺
の所定の範囲に段差を設け、この基板の被膜形成面に被
膜溶液を塗布したのちに硬化処理して被膜を形成するこ
とを特徴とする塗布膜の形成方法。 2、基板周辺の素子欠けを生じる部分のみに段差を設け
ることを特徴とする特許請求範囲1項の塗布膜の形成方
法。 3、基板周辺の所定の範囲に最初の製造工程から素子を
形成せずに分割溝と同じ深さの平面部を形成することを
特徴とする特許請求範囲1項及び2項の塗布膜の形成方
法。[Claims] 1. When manufacturing semiconductors and other electronic components, etc., in a substrate having dividing grooves for dividing elements, steps are provided in a predetermined range around the substrate, and a coating solution is applied to the coating surface of the substrate. A method for forming a coating film, which comprises applying and then performing a curing treatment to form a coating. 2. The method of forming a coating film according to claim 1, characterized in that a step is provided only in a portion around the substrate where element chipping occurs. 3. Formation of a coating film according to claims 1 and 2, characterized in that a flat portion having the same depth as the dividing groove is formed in a predetermined range around the substrate without forming an element from the initial manufacturing process. Method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17153586A JPS6329509A (en) | 1986-07-23 | 1986-07-23 | Formation of coating film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17153586A JPS6329509A (en) | 1986-07-23 | 1986-07-23 | Formation of coating film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6329509A true JPS6329509A (en) | 1988-02-08 |
Family
ID=15924923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17153586A Pending JPS6329509A (en) | 1986-07-23 | 1986-07-23 | Formation of coating film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6329509A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9513551B2 (en) | 2009-01-29 | 2016-12-06 | Digiflex Ltd. | Process for producing a photomask on a photopolymeric surface |
-
1986
- 1986-07-23 JP JP17153586A patent/JPS6329509A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9513551B2 (en) | 2009-01-29 | 2016-12-06 | Digiflex Ltd. | Process for producing a photomask on a photopolymeric surface |
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