JPS6329409B2 - - Google Patents

Info

Publication number
JPS6329409B2
JPS6329409B2 JP54034436A JP3443679A JPS6329409B2 JP S6329409 B2 JPS6329409 B2 JP S6329409B2 JP 54034436 A JP54034436 A JP 54034436A JP 3443679 A JP3443679 A JP 3443679A JP S6329409 B2 JPS6329409 B2 JP S6329409B2
Authority
JP
Japan
Prior art keywords
capillary
wire
bonding
moving
movement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54034436A
Other languages
Japanese (ja)
Other versions
JPS55127031A (en
Inventor
Michio Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3443679A priority Critical patent/JPS55127031A/en
Publication of JPS55127031A publication Critical patent/JPS55127031A/en
Publication of JPS6329409B2 publication Critical patent/JPS6329409B2/ja
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Description

【発明の詳細な説明】 この発明は半導体装置のワイヤボンデイング技
術、特に自動ワイヤボンダを用いる際のＸ−Ｙテ
ーブルのスタートタイミング制御法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to wire bonding technology for semiconductor devices, and particularly to a method for controlling the start timing of an X-Y table when using an automatic wire bonder.

半導体集積回路装置の組立プロセスにおいて、
第１図を参照し主面に集積回路を形成し、複数の
電極端子を設けた半導体ペレツト１を複数のリー
ド２を一体に形成したリードフレームの中心３に
ペレツト付けし、上記複数の電極と周囲のリード
との間をワイヤ（金線）４で接続するために、キ
ヤピラリ５と称する先細セラミツク管を有するワ
イヤボンダを使用し、このキヤピラリの上下（Ｚ
方向）移動と、水平（Ｘ−Ｙ方向）移動とにより
キヤピラリ先端から繰り出したワイヤを電極とリ
ードにそれぞれボンデイング（熱圧着）すること
が行われている。そしてこのワイヤボンダはペレ
ツト位置とリードのボンデイング位置をあらかじ
め記憶し、自動的にキヤピラリのＺ方向及びＸ−
Ｙ方向の移動を行う自動ワイヤボンダが使用され
ている。 In the assembly process of semiconductor integrated circuit devices,
Referring to FIG. 1, a semiconductor pellet 1 having an integrated circuit formed on its main surface and provided with a plurality of electrode terminals is attached to the center 3 of a lead frame integrally formed with a plurality of leads 2, and the plurality of electrodes and In order to connect the surrounding leads with a wire (gold wire) 4, a wire bonder having a tapered ceramic tube called a capillary 5 is used.
The wires fed out from the tip of the capillary are bonded (thermocompression bonded) to the electrodes and leads, respectively, by moving the capillary (in the X-Y direction) and moving the wire horizontally (in the X-Y direction). This wire bonder memorizes the pellet position and lead bonding position in advance, and automatically adjusts the capillary in the Z direction and X-direction.
An automatic wire bonder with movement in the Y direction is used.

ところで従来の自動ワイヤボンダによるワイヤ
ボンデイングの際のＸ−Ｙテーブルのスタートタ
イミングはＺカムチヤート（タイムチヤート）上
のある固定した１点のみに規定され、その１点か
らしかスタートできないようになつている。すな
わち、第２図の横軸に時間（ｔ）、縦軸にキヤピ
ラリ（末端）の上下位置(h)をとつたキヤピラリ上
下動作曲線において、B1，B2はボンデイング点
であり、t1をＸ−Ｙ方向移動開始の設定点とする
と、キヤピラリーが上方向及びＸ−Ｙ方向に同時
に移動しながらt2で最も高位置に達し、その高さ
を保持してＸ−Ｙ方向に移動してt4より下降しな
がら移動し、t3で始めの設定点t1と同じ高さに達
し、その後下降速度を緩めB2でボンデイングす
る。このようなキヤピラリの動きにおいて、ワイ
ヤ距離（電極とリードボンデイング位置との間
隔）が長い場合は走行時間T1を要し、t3で走行が
完了する。一方ワイヤ距離が短い場合は走行時間
T2を要し、t4で走行が完了する。しかしこのよう
にワイヤ距離の長さによつて走り終りの点が異な
ることは好ましくなく、どんな長さのワイヤでも
走り終りの点がt3というように終了点が決まつて
いる方がよい。 By the way, the start timing of the X-Y table during wire bonding with a conventional automatic wire bonder is defined only at one fixed point on the Z cam chart (time chart), and it is possible to start only from that one point. That is, in the capillary vertical movement curve in which the horizontal axis in Fig. 2 is time (t) and the vertical axis is the vertical position (h) of the capillary (end), B 1 and B 2 are bonding points, and t 1 is If the set point is to start moving in the X-Y direction, the capillary will move upward and in the X-Y direction at the same time, reaching the highest position at t 2 , then holding that height and moving in the It moves while descending from t 4 , reaches the same height as the initial set point t 1 at t 3 , and then slows down the descent speed and performs bonding at B 2 . In such a movement of the capillary, if the wire distance (the distance between the electrode and the lead bonding position) is long, a traveling time T1 is required, and the traveling is completed at t3 . On the other hand, if the wire distance is short, the running time
It takes T 2 and the run is completed in t 4 . However, it is not preferable that the end point of the run differs depending on the length of the wire distance, and it is better to have a fixed end point such that the end point of the run is t3 for any length of wire.

第３図はDCモータを使用するＸ−Ｙテーブル
の速度カーブを示し、l1はワイヤ距離の長い場
合、l2はワイヤ距離の短い場合であつて、いずれ
もＸ−Ｙテーブル速度は直線的に増減し、移動時
間の中間においてピークを有する。このような従
来方式ではワイヤの伸ばしすぎによるタブシヨー
トやリード・ワイヤ間のシヨートをひき起すおそ
れがある。 Figure 3 shows the speed curve of an X-Y table using a DC motor, l 1 is for a long wire distance, l 2 is for a short wire distance, and in both cases the X-Y table speed is linear. It increases and decreases during the travel time, and has a peak in the middle of the travel time. In such a conventional method, there is a risk of tab shot or short shot between the lead wires due to overstretching of the wire.

本発明は上記した従来の問題点を解消するため
になされたものであり、その目的は自動ワイヤボ
ンデイングにおいて繰り出されるワイヤの長さを
適正化しワイヤのたるみによるシヨートを無くす
ことであり、又その完全自動化にある。 The present invention has been made to solve the above-mentioned conventional problems, and its purpose is to optimize the length of the wire fed out in automatic wire bonding, eliminate shortening caused by slack wire, and to completely eliminate shortening caused by slack in the wire. It's all about automation.

上記目的を達成するためこの発明は、ワイヤ距
離（電極とリードとの間隔）に基づいてキヤピラ
リの動作軌跡を決定することを要旨とする。 In order to achieve the above object, the gist of the present invention is to determine the operating locus of the capillary based on the wire distance (the distance between the electrode and the lead).

以下、本発明を実施例にそつて説明する。 The present invention will be explained below with reference to Examples.

第４図は前掲した第２図、第３図を合成するこ
とにより構成され横軸にワイヤ距離l1縦軸に高さ
ｈをとるキヤピラリの軌跡（２次元）を示すもの
で、同図ａは従来法による例、ｂは本発明法によ
る例で、太い破線はワイヤ距離が長い（l1）場
合、太い実線はワイヤ距離が短い場合をそれぞれ
示し、いずれも走り終りで一致するように記載し
てある。 Figure 4 is constructed by combining Figures 2 and 3 above, and shows the locus (two - dimensional) of the capillary, with the wire distance l on the horizontal axis and the height h on the vertical axis. is an example based on the conventional method, b is an example based on the method of the present invention, the thick broken line indicates the case where the wire distance is long (l 1 ), and the thick solid line indicates the case where the wire distance is short, and both are written so that they match at the end of the run. It has been done.

ワイヤ距離が長い（l1）場合はａ，ｂいずれも
ア→イでキヤピラリがＺ方向に上昇し、イ→ウで
Ｘ−Ｙ−Ｚ方向に移動し、ウ→エでＸ−Ｙ方向か
らＸ−Ｙ−Ｚ方向に移動下降し、エ−オでＺ方向
のみに下降する。 If the wire distance is long (l 1 ), in both a and b, the capillary moves up in the Z direction from A to A, moves in the X-Y-Z direction from A to C, and moves from the X-Y direction from U to E. Moves and descends in the X-Y-Z direction, and descends only in the Z direction with A-O.

ワイヤ距離が短い（l2）場合、従来法ａではカ
→キでＺ方向上昇し、ワイヤ距離が長い場合イ→
ウと同じタイミングでＸ−Ｙテーブルが走行をは
じめキ→クのようにＸ−Ｙ−Ｚ方向に移動し、ク
→ケでＸ−Ｙ方向移動し、ケの位置でワイヤが最
大限（la）に延び、その後ケ→コでＺ方向に下降
する。これに対して本発明法ｂでは、まずカ→キ
と最大高さまでキヤピラリが上昇し、ワイヤ距離
が長い場合のイ→ウとは異なるタイミングでキ→
クのようにＸ−Ｙ方向への走行がスタートし、ク
の位置でワイヤが最大限（lb）に延び、その後ク
→ケのようにＸ−Ｙ−Ｚ方向下降し、ケ→コのよ
うにＺ方向のみ下降する。 When the wire distance is short (l 2 ), conventional method a moves up in the Z direction from KA to KI, and when the wire distance is long, it goes up from I to KI.
At the same timing as C, the X-Y table starts running and moves in the X-Y-Z direction from K to K, moves in the X-Y direction from K to K, and at the position of K, the wire reaches its maximum (la ) and then descends in the Z direction from ke to ko. On the other hand, in method b of the present invention, the capillary first rises to the maximum height from K to K, and at a different timing from A to C when the wire distance is long.
The wire starts traveling in the X-Y direction as shown in the arrow, the wire extends to the maximum (lb) at the position of the arrow, and then descends in the X-Y-Z direction as shown in the arrow. It descends only in the Z direction.

ａとｂとを対照し la＞lb となることは明らかであり、ワイヤ距離の長さに
応じてＸ−Ｙ方向のスタートのタイミングをかえ
る本発明の場合ワイヤの引戻量が小さく、短いワ
イヤでワイヤボンデイングを行うことができる。 Comparing a and b, it is clear that la > lb, and in the case of the present invention, which changes the start timing in the X-Y direction depending on the length of the wire distance, the amount of wire retraction is small and the wire is short. Wire bonding can be done with.

第５図ａ，ｂは、第４図ｂの実施例の場合のキ
ヤピラリの高さｈと時間ｔとの関係、Ｘ−Ｙテー
ブルの移動速度Ｖと時間ｔとの関係を示す。 5a and 5b show the relationship between the height h of the capillary and the time t, and the relationship between the moving speed V of the X-Y table and the time t in the case of the embodiment shown in FIG. 4b.

電極とリードとの間隔が大きい場合、キヤピラ
リは、第５図ａの実線曲線のように上昇、下降さ
れる。この場合、Ｘ−Ｙテーブルは、次のように
移動される。 When the distance between the electrode and the lead is large, the capillary is raised and lowered as shown by the solid curve in FIG. 5a. In this case, the XY table is moved as follows.

すなわち、Ｘ−Ｙテーブルは、キヤピラリが第
１ボンデイング点B1でのボンデイングの後に上
昇され、中間高さに達する（時刻t1）と、それに
応じて移動開始される。移動開始によつて、Ｘ−
Ｙテーブルの速度Ｖは、第５図ｂの実線のように
増加される。Ｘ−Ｙテーブルの速度Ｖは、キヤピ
ラリが下降されたときの中間高さにおいて０とな
るように、時刻t5以後において減少される。 That is, the X-Y table starts moving accordingly when the capillary is raised after bonding at the first bonding point B1 and reaches the intermediate height (time t1 ). By starting the movement, X-
The velocity V of the Y-table is increased as shown by the solid line in FIG. 5b. The velocity V of the X-Y table is reduced after time t 5 so that it becomes 0 at the intermediate height when the capillary is lowered.

電極とリードとの間隔が小さい場合、キヤピラ
リの下降タイミングは、第５図ａに破線によつて
示されているように早められる。この場合、Ｘ−
Ｙテーブルは、キヤピラリが最大高さに達した時
刻t2から、キヤピラリが中間高さまで下降される
時刻t4まで移動される。それ故に、Ｘ−Ｙテーブ
ルの移動速度Ｖは、第５図ｂに破線によつて示さ
れているように変化される。 If the electrode-to-lead spacing is small, the timing of the capillary descent will be advanced, as shown by the dashed line in FIG. 5a. In this case, X-
The Y-table is moved from time t2 , when the capillary reaches its maximum height, to time t4 , when the capillary is lowered to an intermediate height. Therefore, the moving speed V of the X-Y table is varied as shown by the dashed line in FIG. 5b.

以上実施例で述べた本発明によれば、キヤピラ
リの上昇高さｈに対してワイヤ距離が短いほどワ
イヤ引戻し量を小さく押えるのに有効であり、余
分なワイヤを使用しないからタブシヨート、リー
ド・ワイヤシヨート等の事故は無くなり、ワイヤ
の山の高さを低くすることができる。又、本発明
によればあらかじめ記憶された情報に基づいて自
動的にＸ−Ｙテーブル移動操作を行うのであるか
らループ不良率を３〜２％程度向上させるととも
に、ワイヤボンデイング作業速度を早くすること
ができる。 According to the present invention described in the embodiments above, the shorter the wire distance with respect to the rising height h of the capillary, the more effective it is in suppressing the amount of wire pullback. Accidents such as this are eliminated, and the height of the wire pile can be reduced. Further, according to the present invention, since the X-Y table movement operation is automatically performed based on previously stored information, the loop failure rate can be improved by about 3 to 2%, and the wire bonding work speed can be increased. Can be done.

【図面の簡単な説明】[Brief explanation of drawings]

第１図はワイヤボンデイングの一般的形態を示
す説明図、第２図はキヤピラリ上下動作曲線図、
第３図はＸ−Ｙテーブル速度曲線図、第４図はキ
ヤピラリ軌跡曲線図でａは従来法の場合、ｂは本
発明方法の場合をそれぞれ示し、第５図ａ，ｂ
は、第４図ｂのキヤピラリ軌跡曲線図に対応する
キヤピラリ上下動曲線図、Ｘ−Ｙテーブル速度曲
線図をそれぞれ示す。 １……半導体ペレツト、２……リード、３……
リードフレーム中心部、４……ワイヤ、５……キ
ヤピラリ。 Fig. 1 is an explanatory diagram showing the general form of wire bonding, Fig. 2 is a capillary vertical movement curve diagram,
Fig. 3 is an X-Y table speed curve diagram, Fig. 4 is a capillary trajectory curve diagram, where a shows the case of the conventional method, b shows the case of the method of the present invention, and Figs. 5 a and b.
4A and 4B respectively show a capillary vertical motion curve diagram and an X-Y table speed curve diagram corresponding to the capillary locus curve diagram in FIG. 4b. 1... Semiconductor pellet, 2... Lead, 3...
Center part of lead frame, 4... wire, 5... capillary.

Claims (1)

【特許請求の範囲】[Claims] １ 半導体ペレツト上の複数の電極と、上記ペレ
ツト周囲に配設された複数のリードとの間で、こ
れらに対しＸ−Ｙ方向及びＺ方向に移動するキヤ
ピラリによりワイヤボンデイングを行なうにあた
り、第１ボンデイング点でのボンデイングの終了
の後に上記キヤピラリの上昇とＸ−Ｙ方向への移
動との組み合せをもつて上記キヤピラリを移動せ
しめる第１移動動作と、上記キヤピラリの中間高
さまでの下降とＸ−Ｙ方向への移動との組み合せ
をもつて上記キヤピラリを移動せしめる第２移動
動作と、Ｘ−Ｙ方向の実質的な移動なしに上記キ
ヤピラリを上記中間高さから第２ボンデイング点
まで下降せしめる第３移動動作とによつて上記キ
ヤピラリを移動せしめるようになし、かつ上記第
１動作において上記第１ボンデイング点と上記第
２ボンデイング点とのＸ−Ｙ方向距離に基づいて
上記キヤピラリがＸ−Ｙ方向への移動を開始する
タイミングを変えることを特徴とするワイヤボン
デイング法。1. When performing wire bonding between a plurality of electrodes on a semiconductor pellet and a plurality of leads arranged around the pellet using capillaries moving in the X-Y direction and the Z direction, the first bonding a first moving operation of moving the capillary by a combination of raising the capillary and moving it in the X-Y direction after the end of bonding at the point; and lowering the capillary to an intermediate height and moving it in the X-Y direction. a second movement movement for moving the capillary in combination with movement to and a third movement movement for lowering the capillary from the intermediate height to a second bonding point without substantial movement in the X-Y direction; and in the first operation, the capillary is moved in the X-Y direction based on the distance in the X-Y direction between the first bonding point and the second bonding point. A wire bonding method characterized by changing the timing at which the wire bonding starts.
JP3443679A 1979-03-26 1979-03-26 Wire bonding Granted JPS55127031A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3443679A JPS55127031A (en) 1979-03-26 1979-03-26 Wire bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3443679A JPS55127031A (en) 1979-03-26 1979-03-26 Wire bonding

Publications (2)

Publication Number Publication Date
JPS55127031A JPS55127031A (en) 1980-10-01
JPS6329409B2 true JPS6329409B2 (en) 1988-06-14

Family

ID=12414167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3443679A Granted JPS55127031A (en) 1979-03-26 1979-03-26 Wire bonding

Country Status (1)

Country Link
JP (1) JPS55127031A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2561262Y2 (en) * 1993-12-28 1998-01-28 北陸電気工業株式会社 Variable resistor for high voltage

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435679A (en) * 1977-08-25 1979-03-15 Toshiba Corp Semiconductor connection method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435679A (en) * 1977-08-25 1979-03-15 Toshiba Corp Semiconductor connection method

Also Published As

Publication number Publication date
JPS55127031A (en) 1980-10-01

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