JPS5961038A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To prevent short-circuiting between tab and wire through provision of taller wire by controlling movement of capillary to the rectangular movement at the time of wire bonding. CONSTITUTION:On the occasion of connecting electrodes of semiconductor pellet 5 and external leads 6 with a wire 1 using a capillary 2, first the capillary 2 is bonded to the electrodes of semiconductor pellet 5 by the ball-bonding method. Next, the capillary 2 is lifted vertically up to the upper limit, and it is further moved in parallel up to the area just above the connecting portion of external leads 6. Thereafter, the capillary 2 is vertically moved downward and thereby the other end of wire 1 is connected to the external lead 6. Since the capillary 2 is moved in the rectangular form, the wire 1 can be formed high.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to wire bonding for wire connection between each electrode of a semiconductor pellet and an external lead.

In a typical semiconductor device, a semiconductor pellet supported by a tab and an external lead are connected by a wire made of gold wire or aluminum wire. These wires may short-circuit between the tag supporting the semiconductor beret and the wires due to insufficient wire height during wire bonding, subsequent resin encapsulation, or otherwise. The yield of semiconductor devices was decreasing.

The present invention has been made in consideration of the above points, and an object of the present invention is to provide a method of manufacturing a semiconductor device that can improve the yield by preventing short circuits between the toughness of the semiconductor device and the wire. The present invention will be explained below with reference to the drawings.

FIGS. 1(a) to 1(g) show each process of an embodiment of the present invention. During wire bonding, the wire 1
This is done using capillary 2 that passes through. The movement of the cavity 2 when wiring one wire 1 is shown in Fig. 1(a) to (
g). In these figures, an f-ball 3 at the tip of the wire 1 passing through the cavity 2 is formed. 1st
In FIG. 2B, the cavity 2 is lowered and ball bonded onto the electrode (not shown) of the semiconductor pellet 5 on the pufferfish 4. The cavity 2, which has completed the ball bonding in FIG. 1(C), rises. In FIG. 1(d), the raised capillary 2 moves onto the external lead 6.

In FIG. 1(e), the upper pressure capillary 2 of the external lead 6 has been lowered, and the wire 1 that has come out below the cavity 2 has returned into the capillary iterator. In FIG. 1 (fl), the capillary 2 performs stitch bonding. In FIG. 1 (g), the capillary 2 rises and forms a ball 3 at the tip of the wire 1, completing wire bonding.

Height A of wire bonded wire 1 (Fig. 1 (g)
)) becomes lower if the line in which the internal pressure wire 1 returns while the cavity 2 is descending is thicker, as shown in FIG. 1(e). Conversely, if the amount of return is small, the height A of the wire 1 will increase.

Figure i2 (a) shows the movement of the capillary 2 during the wire bonding ink of this invention. That is, the cavity 2 performs a rectangular movement. Figure 2(b) shows the case where the horizontal movement of the capillary 2 has not been completed, although the capillary 2 has begun to descend to the stitch bond. Figure 2(b) and Figure 3(b) respectively show enlarged views of when the capillary 2 starts to descend, but the angle between the capillary 2 and the wire 1 is as shown in Figure 2(b). 01 is thicker than θ2 in FIG. 3(b).

Since this angle is large, the frictional force between capillary 2 and wire 1 when capillary 2 descends is greater in Figure 2(b), and the amount of wire 1 returning to capillary 2 is greater in Figure 2(a). is smaller, and the height A of the wire 1 is higher.

In the past, even if the wire bonding conditions were different,
When performing the stitch stroke χ to the external lead 6, ie when the capillary 2 starts its descent, the height A of the wire 1 can be increased by completing the horizontal movement.

As explained above, according to the present invention, the cavity is vertically raised, horizontally moved, and vertically lowered in a so-called rectangular motion for pounding, so the height of the wire can be increased, and at this time, the height of the wire can be increased. If the height of the wire connecting each electrode and the corresponding external lead is insufficient (as in the past), short circuits between the tag and the wire can be prevented, and the yield of semiconductor devices can be improved. There are advantages.

[Brief explanation of drawings]

Figures 1 (a) to (g) are diagrams showing the movement of the cavity in each step of an embodiment of the present invention, Figure 2 (a),
(b) is an enlarged view of the rectangular movement and main parts of a capillary to which this invention is applied, and FIGS. 3(a) and 3(b) are enlarged views of the movement and main parts of a capillary when this invention is not applied. . In the figure, 1 is a wire, 2ii cavity, 31i ball, 4 is a tag, 5 is a semiconductor bullet, and 6 is an external lead. Note that the same reference numerals in the figures indicate the same or corresponding parts. Agent Makoto Kuzuno (1 other person) Figure 1 (a) (b) (c)
(d) (e) (f)
(q) 2nd (a) 6 3rd (a) 181-

Claims (1)

[Claims] In wire bonding, which connects each flI of a semiconductor pellet and an external lead with a wire using a cavity, in order to obtain a sufficient wire height, after the cavity is ball-bonded to the electrode of the semiconductor pellet, the capillary is vertically connected to the upper limit. manufacturing a semiconductor device, characterized in that the wire is raised to a height of 100.degree. C., then moved in parallel to just above a connecting portion of an external lead, and then lowered vertically to connect the other end of the wire to the external lead to perform wire bonding. Method.