JPS60249340A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPS60249340A
JPS60249340A JP59104693A JP10469384A JPS60249340A JP S60249340 A JPS60249340 A JP S60249340A JP 59104693 A JP59104693 A JP 59104693A JP 10469384 A JP10469384 A JP 10469384A JP S60249340 A JPS60249340 A JP S60249340A
Authority
JP
Japan
Prior art keywords
bonding
period
capillary
wire
bonding position
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59104693A
Other languages
Japanese (ja)
Inventor
Takao Watanabe
隆夫 渡辺
Masayoshi Yamaguchi
政義 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59104693A priority Critical patent/JPS60249340A/en
Publication of JPS60249340A publication Critical patent/JPS60249340A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1016—Shape being a cuboid
    • H01L2924/10161—Shape being a cuboid with a rectangular active surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent a supporter of an object to be bonded from coming into contact with the part other than at the bonding position by a method wherein a period of movement at a fixed level is provided during the descent of said supporter. CONSTITUTION:The amount of movements in the X-axial direction and Y-axial direction from a time t0 for moving a capillery 35 with a ball 37 formed at the tip of an Au wire to the first bonding position is calculated out, and the capillery 35 is lowered on the basis of the relation of the distance and the speed of movement. This period of descent is t1 after t0, and movements are made only by components of X-axial and Y-axial directions at a level (s) for a fixed period t2. Then, the capillery 35 is landed on by another descent toward the bonding position after the t2 period. This period t3 is a short distance, and next ultrasonic bonding is carried out for a period t4. In this case, operation is made by a linear motor e.g. of Z-axial directional drive in such a manner the capillery descends for the periods t1 and t3 and maintains levels (s) and (p) for the periods t2 and t4.

Description

【発明の詳細な説明】 この発明はコンビーータの制御によシ自動でボンディン
グを行うボンディング方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a bonding method that automatically performs bonding under the control of a combiner.

〔従来技術及びその問題点〕[Prior art and its problems]

ワイヤボンディングは予めプログラムされた位置情報を
メモリに記憶しておき、被ボンデイング物と一体に移動
するＩＴＶカメラによるボンディング位置パターンとの
比較照合を行い、Ｘ成分、Ｘ成分の位置ずれ量をコンビ
ーータで算出し、このコンビーータの制御によシ自動的
に被ボンディング物支持体を移動させ、多数のボンディ
ング個所を高速で自動ボンディングしていた。この自動
ボンディング例えばワイヤボンディングにおいて被ボン
デイング物であるワイヤをキャピラリーに支持するキャ
ピラリーを第１のボンディング位置でのボンディングが
終了後、キャピラリを上昇させて第１のボンディング位
置から離陸させる。その後、次の第２のボンディング位
置にキャピラリーをコンピュータの制御にょシ移動させ
る。このキャピラリーの移動は、キャピラリーを下降状
態でキャピラリーを移動させている。For wire bonding, pre-programmed position information is stored in memory, and compared with the bonding position pattern by an ITV camera that moves together with the object to be bonded, and the amount of positional deviation of the X component and The bonding object support was automatically moved under the control of this converter, and a large number of bonding locations were automatically bonded at high speed. In this automatic bonding, for example, wire bonding, after bonding of a capillary supporting a wire to be bonded to the capillary at a first bonding position is completed, the capillary is raised and taken off from the first bonding position. Thereafter, the capillary is moved to the next second bonding position under computer control. This movement of the capillary moves the capillary in a descending state.

しかしながら、この下降状態でキャピラリーを移動させ
ている時、キャピラリーの先端からワイヤの先端に形成
されるボールの位置が予定される長さより短かい場合や
、長い場合がある。短かい場合は問題ないが、長い場合
下降状態の途中で半導体のペレットに接触したシ、また
パッドの位置に正確にボンディングされないことがあっ
た。However, when the capillary is moved in this downward state, the position of the ball formed from the tip of the capillary to the tip of the wire may be shorter or longer than the expected length. If it is short, there is no problem, but if it is long, it may come into contact with the semiconductor pellet during the downward movement, or it may not be bonded accurately to the pad position.

〔発明の目的〕[Purpose of the invention]

この発明は上記点に鑑みなされたもので、次のボンディ
ング椅位晶動中下降状態の途中に一定の高さに保持する
期間を設けることにより、被ボンデイング物支持体のボ
ンディング位置以外の部分への接触を防止するボンディ
ング方法を提供するものである。This invention has been made in view of the above points, and by providing a period during which the bonding chair is held at a constant height during the lowering state during the crystal movement of the bonding object, it is possible to The present invention provides a bonding method that prevents contact between the two.

〔発明の概要〕[Summary of the invention]

即ち、第１のボンディング位置でのボンディング終了後
被ポンディング物支持体を上昇させて離陸させた後筒２
のボンディング位置にコンピ−タの制御に基づき下降状
態で移動させて第２のボンディング位置に着陸させてボ
ンディングする方法において上記下降状態の途中に一定
の高さで移動させる期間を設けるボンディング方法を得
るものである。That is, after the bonding at the first bonding position is completed, the support for the object to be bonded is raised and the rear cylinder 2 is taken off.
To obtain a bonding method in which a bonding method is provided in which a bonding method is performed by moving a bonding device in a descending state under computer control to a second bonding position and landing at a second bonding position, in which a period of movement at a constant height is provided in the middle of the descending state. It is something.

〔発明の実施例〕[Embodiments of the invention]

次に本発明方法をワイヤボンディングに適用した実施例
を図面を参照して説明する。すなわち、被ボンディング
物例えば金線を支持物であるキャピラリーを貫通させ、
このキャピラリーを第１のボンディング位置に導びくこ
とによシポンディング例えば超音波ボンディングをして
いる。この時のキャピラリーの高低方向（Ｚ軸方向）の
移動軌跡を第１図に示す。金線の先端にボールが形成さ
れたキャピラリーは、第１のボンディング位置に移動さ
せる時（１０）から第１のボンディング位置のＸ軸方向
移動量およびＸ軸方向移動量はコンビーータで算出され
その距離とキャピラリーの移動速度との関係でキャピラ
リをＺ軸方向の移動即ち下降させる。この下降期間はｔ
ｏ後１１期間例えば１５ミリ秒間下降する。この時の半
導体のペレットの表面（ｐ）からの高さはキャピラリー
から突出する金線の先端に形成されるボールの形成され
るバラツキの最大値以上に選択する。即ちｔ１期間後そ
の高さくＳ）で一定期間（ｔ２）例えば１ミリ秒〜１ｏ
ｏミリ秒の間で選択される期間キャピラリーをＸ軸方向
・Ｙ軸方向成分のみの移動を行う。即ち、上記高さＳの
位置でボンディング点のサーチを行う期間である。この
ｔ２期間後再びボンディング位置方向に向かってキャピ
ラリーを下降させボンディング位置にキャピラリーを着
陸させる。この期間はｔ３の期間であるっｔ３期間は短
距離であり、ｔ２の期間にほとんどボンディング位置上
方近傍までキャピラリーが移動されている。従って非常
に短期間が選択される。例えば頷ミリ秒である。次にボ
ンディング位置で金線をペレットの指定されたパッドの
位置に超音波ボンディングがｔ４期間実施される。Next, an embodiment in which the method of the present invention is applied to wire bonding will be described with reference to the drawings. That is, the object to be bonded, such as a gold wire, is passed through a capillary that is a support,
By guiding this capillary to the first bonding position, bonding, for example, ultrasonic bonding, is performed. The locus of movement of the capillary in the height direction (Z-axis direction) at this time is shown in FIG. When the capillary with a ball formed at the tip of the gold wire is moved to the first bonding position (10), the amount of movement in the X-axis direction and the amount of movement in the X-axis direction of the first bonding position are calculated by the conbeater and the distance is The capillary is moved in the Z-axis direction, that is, is lowered, in relation to the moving speed of the capillary. This period of decline is t
After o, it descends for 11 periods, for example, 15 milliseconds. At this time, the height of the semiconductor pellet from the surface (p) is selected to be greater than the maximum value of the variation in the formation of balls formed at the tips of the gold wires protruding from the capillary. That is, after the period t1, the height S) is maintained for a certain period (t2), for example, 1 millisecond to 1o.
The capillary is moved only in the X-axis direction and Y-axis direction components for a period selected between o milliseconds. That is, this is a period in which a bonding point is searched at the height S above. After this period t2, the capillary is again lowered toward the bonding position and landed at the bonding position. This period is the period t3. The t3 period is a short distance, and the capillary has been moved almost to the vicinity above the bonding position during the t2 period. Therefore, a very short period is chosen. For example, nod milliseconds. Next, at the bonding position, ultrasonic bonding is performed on the gold wire to the designated pad position of the pellet for a period t4.

超音波ボンディング後、キャピラリーを上昇させて上記
ボンディング位置から離陸させる。この期間はｔ５であ
る。上記キャピラリーの上昇駆動はコンビーータの制御
によシ実行されるが、Ｚ軸方向に移動するように構成さ
れたりニアモータを設けて移動させる。従ってＺ軸方向
駆動のリニアモータを制御して１１．１３期間は下降駆
動、ｔ２＋”Ａ期間はｓ、ｐの高さを維持するように駆
動する。ワイヤボンディングは例えば、第２図に示すよ
うに半導体ペレットＣＤのパッド（２２）とリードフレ
ーム（ハ）との接続を金線（財）で自動にて高速に実行
するものである。この場合第２図のａ改からｂ点の移動
距離が長く、半導体チップ上をキャピラリが移動する場
合において、ＩＣの表面には素子の凹凸があるためＸＹ
テーブルの移動中にキャピラリーの下降を第１図のサー
チレベル点Ｓで１２時間停止させてＸＹテーブルの移動
完了後に再びキャピラリーを下降させてパッドポンドを
行う。サーチレベルＳは通常の一時停止させない従来の
サーチレベルと同一の高さ又はそれ以上で制御させる。After ultrasonic bonding, the capillary is raised and taken off from the bonding position. This period is t5. The upward driving of the capillary is carried out under the control of a conbeater, which may be configured to move in the Z-axis direction, or may be moved by providing a near motor. Therefore, the linear motor driven in the Z-axis direction is controlled to drive downward during the 11.13 period, and to maintain the heights s and p during the t2+''A period.Wire bonding is performed, for example, as shown in FIG. The connection between the pad (22) of the semiconductor pellet CD and the lead frame (c) is automatically performed at high speed using gold wire.In this case, the moving distance from point a to point b in Figure 2 is When the capillary is long and moves over the semiconductor chip, the XY
While the table is moving, the lowering of the capillary is stopped for 12 hours at the search level point S in FIG. 1, and after the XY table has been moved, the capillary is lowered again to perform pad pounding. The search level S is controlled at the same height as or higher than the conventional search level without pause.

第２図のワイヤボンディングの様Ａ示したのが第３図で
ある。半導体回路基板Ｃ３１）は基板ｏ埠にペレットＱ
〃がマウントされ、リード端子（ハ）で構成される。一
方、ワイヤボンディング装置のワイヤ通形成されておシ
、他方第１クランパ（至）は開放、第２クランパＣ３１
は閉じられた状態でワイヤボンディングが行なわれる。FIG. 3 shows the wire bonding shown in FIG. 2. Semiconductor circuit board C31) is loaded with pellets Q on the board o
〃 is mounted and consists of a lead terminal (c). On the one hand, the wire of the wire bonding device is formed through the wire, the first clamper (toward) is open, and the second clamper C31 is open.
Wire bonding is performed in the closed state.

上記ポールＧＤはワイヤ（至）の先端に高電圧放電スパ
ークをさせて形成する。第３図のキャピラリ（ハ）と回
路基板Ｇυの関係を拡大して図示したのが第４図である
。即ち第１図の一定高さでキャピラリＧつを移動する期
間の高さは充分高い位置にあシ、従来のサーチレベルよ
υｈａだけさらに高くすることを示している。The above-mentioned pole GD is formed by causing a high voltage discharge spark at the tip of a wire. FIG. 4 is an enlarged view of the relationship between the capillary (c) and the circuit board Gυ in FIG. 3. That is, the height during the period in which the G capillaries are moved at a constant height in FIG. 1 is set at a sufficiently high position, and is shown to be higher than the conventional search level by υha.

第２図のａ点からｂ点（破線）までキャビラー缶が高速
下降中ＫＸＹテーブル（図示せず）の移動が完了してい
ない場合にサーチレベル点Ｓで１１時間キャピラリー０
ωの降下を停止させる。この時サーチレベルｈ２は従来
のサーチレベルよシも充分高く取るようにコンピュータ
の上位記憶部６１）にデータを入力して記憶しておき、
この記憶プログラムに従ってワイヤボンディング順序毎
にＺ軸制御部働に出力し、駆動部（至）例えばリニアモ
ータを動作させるっ 以上説明したように上記実施例によれば次のような効果
がある。When the capillary can is descending at high speed from point a to point b (dashed line) in Fig. 2 and the movement of the KXY table (not shown) is not completed, the capillary is zero for 11 hours at the search level point S.
Stop the descent of ω. At this time, data is input and stored in the upper storage unit 61) of the computer so that the search level h2 is sufficiently higher than the conventional search level.
According to this stored program, each wire bonding order is outputted to the Z-axis control section, and the drive section (to), for example, a linear motor, is operated.As explained above, the above embodiment has the following effects.

１）第２図のサーチレベル点ａ１を全ワイヤ高くシなく
ても、第５図（ａ）の１時間延びる部分のみサーチレベ
ルｈ２を充分高くし、その高さを一定期間保持するだけ
で、先行ボールが発生していても、移動中に第４図（ｂ
）のようＫｈ３の間隔があるため、ベレットに接触する
ととなく、またボンディング位置不良の発生をなくする
ことが出来る。1) Even if the search level point a1 in Fig. 2 is not set high for all the wires, the search level h2 can be set sufficiently high only in the part extending by one hour in Fig. 5(a), and that height can be maintained for a certain period of time. Even if a leading ball occurs, the ball will not be released during movement as shown in Figure 4 (b).
), the spacing of Kh3 prevents contact with the pellet and prevents bonding position defects from occurring.

２）このようなボンディング法によって全ワイヤのボン
ディング時間の短縮が計れる。2) Such a bonding method can shorten the bonding time for all wires.

３）サーチレベル点の行き過ぎをなくすようにキャピラ
リー上下駆動部の自動サーボゲイン調整部を付加する必
要がなく装置の制御が容易になる。3) There is no need to add an automatic servo gain adjustment section for the capillary vertical drive section to prevent overshooting of the search level point, making it easier to control the device.

〔発明の効果〕〔Effect of the invention〕

上記説明で明らかなようにボンディング点に被ボンディ
ング物支持体を下降状態で移動させる際に下降状態の途
中に一定の高さを保持する期間を設けるので、次のボン
ディング位置のサーチ中にボンディング点以外の部分に
接触したシ、ボンデインク不良などを改善できる効果が
ある。As is clear from the above explanation, when moving the bonding object support to the bonding point in a descending state, there is a period in which it maintains a constant height during the descending state, so the bonding point is It has the effect of improving problems such as contact with other parts and defective bonding ink.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明方法の実施例を説明するだめのキャピラ
リーの２軸方白変位軌跡説明図、第２図は第１図のワイ
ヤボンディング説明図、第３図は第１図のサーチレベル
におけるキャピラリーと半めの拡大図、第５図は第１図
に示すキャピラリー駆動を行う実施例説明図である。 あ・・・キャピラリ、　３７・・・ボール、３１・・・
半導体回路基板。 隼４図 ３２ 第５図Fig. 1 is an explanatory diagram of the two-axis white displacement trajectory of a capillary for explaining an embodiment of the method of the present invention, Fig. 2 is an explanatory diagram of the wire bonding of Fig. 1, and Fig. 3 is an explanatory diagram at the search level of Fig. 1. FIG. 5 is an enlarged view of a capillary and a half thereof, and is an explanatory diagram of an embodiment in which the capillary shown in FIG. 1 is driven. Ah...capillary, 37...ball, 31...
Semiconductor circuit board. Hayabusa 4 Figure 32 Figure 5

Claims (2)

【特許請求の範囲】[Claims] （１）第１のワイヤポンディング位置でのボンディング
終了後被ボンデイング物支持体を上昇させて離陸させた
後筒２のワイヤボンディング位置にコンビーータの制御
に基づき下降状態で移動させて第２のワイヤポンディン
グ位置に着陸させてボンディングを行う方法において、
上記下降状態の途中に一定の高さで移動させる期間を設
けることを特徴とするボンディング方法。(1) After the bonding at the first wire bonding position is completed, the support for the object to be bonded is raised and taken off, and then moved to the wire bonding position in the rear cylinder 2 in a lowered state under the control of the conbeater, and the second wire In the method of performing bonding by landing at the bonding position,
A bonding method characterized in that a period of movement at a constant height is provided during the lowering state. （２）上記一定の高さは、ワイヤボンディングをキャピ
ラリーから突出したワイヤ先端く形成されるボール位置
の最大長さ以上に設定することを特徴とする特許請求の
範囲第１項記載のボンディング方法。(2) The bonding method according to claim 1, wherein the certain height is set to be greater than or equal to the maximum length of the ball position formed at the tip of the wire protruding from the capillary.
JP59104693A 1984-05-25 1984-05-25 Wire bonding method Pending JPS60249340A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59104693A JPS60249340A (en) 1984-05-25 1984-05-25 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59104693A JPS60249340A (en) 1984-05-25 1984-05-25 Wire bonding method

Publications (1)

Publication Number Publication Date
JPS60249340A true JPS60249340A (en) 1985-12-10

Family

ID=14387552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59104693A Pending JPS60249340A (en) 1984-05-25 1984-05-25 Wire bonding method

Country Status (1)

Country Link
JP (1) JPS60249340A (en)

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