JPS63293553A - Electrophotographic sensitive body - Google Patents
Electrophotographic sensitive bodyInfo
- Publication number
- JPS63293553A JPS63293553A JP12795487A JP12795487A JPS63293553A JP S63293553 A JPS63293553 A JP S63293553A JP 12795487 A JP12795487 A JP 12795487A JP 12795487 A JP12795487 A JP 12795487A JP S63293553 A JPS63293553 A JP S63293553A
- Authority
- JP
- Japan
- Prior art keywords
- protective layer
- layer
- resistance
- low
- contg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011241 protective layer Substances 0.000 claims abstract description 38
- 239000010410 layer Substances 0.000 claims abstract description 26
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 6
- 229920002050 silicone resin Polymers 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 108091008695 photoreceptors Proteins 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 abstract description 9
- -1 polysiloxane Polymers 0.000 abstract description 6
- 125000003545 alkoxy group Chemical group 0.000 abstract description 5
- 229920005989 resin Polymers 0.000 abstract description 4
- 239000011347 resin Substances 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract description 2
- 125000001841 imino group Chemical group [H]N=* 0.000 abstract description 2
- 125000002560 nitrile group Chemical group 0.000 abstract description 2
- 125000003277 amino group Chemical group 0.000 abstract 1
- 125000004432 carbon atom Chemical group C* 0.000 abstract 1
- 238000000034 method Methods 0.000 description 15
- 239000010408 film Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 150000003961 organosilicon compounds Chemical group 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910001370 Se alloy Inorganic materials 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- BLBNEWYCYZMDEK-UHFFFAOYSA-N $l^{1}-indiganyloxyindium Chemical compound [In]O[In] BLBNEWYCYZMDEK-UHFFFAOYSA-N 0.000 description 1
- FKNIDKXOANSRCS-UHFFFAOYSA-N 2,3,4-trinitrofluoren-1-one Chemical compound C1=CC=C2C3=C([N+](=O)[O-])C([N+]([O-])=O)=C([N+]([O-])=O)C(=O)C3=CC2=C1 FKNIDKXOANSRCS-UHFFFAOYSA-N 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical group 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 210000004013 groin Anatomy 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/14—Inert intermediate or cover layers for charge-receiving layers
- G03G5/147—Cover layers
- G03G5/14708—Cover layers comprising organic material
- G03G5/14713—Macromolecular material
- G03G5/14747—Macromolecular material obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- G03G5/14773—Polycondensates comprising silicon atoms in the main chain
Abstract
Description
【発明の詳細な説明】
［技術分野］
本発明は、電子写真感光体、特に、光導電層の表面に低
抵抗保護層を有する電子写真感光体の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an electrophotographic photoreceptor, particularly to an improvement in an electrophotographic photoreceptor having a low resistance protective layer on the surface of a photoconductive layer.
［従来技術］
従来、電子写真用感光体としては、導電性支持体上にセ
レンないしセレン合金を主体とする光導電層を設けたも
の、酸化亜鉛、酸化カドミウムなどの無機光導電材料を
バインダー中に分散させたもの、ポリ−Ｎ−ビニルカル
バゾールとトリニトロフルオレノンあるいはアゾ顔料な
どの有機光導電材料を用いたもの及び非晶質シリコンを
用いたもの等が一般に知られている。[Prior Art] Conventionally, photoreceptors for electrophotography have been prepared by providing a photoconductive layer mainly made of selenium or a selenium alloy on a conductive support, or by using an inorganic photoconductive material such as zinc oxide or cadmium oxide in a binder. Generally known are those using organic photoconductive materials such as poly-N-vinylcarbazole and trinitrofluorenone or azo pigments, and those using amorphous silicon.
これらの感光体に対して長時間高画質を保つ信頼性の要
求が年々高まっている。しかし光導電層が露出している
場合、帯電過程のコロナ放電による損傷と複写プロセス
で受ける他部材との接触による物理的あるいは化学的な
損傷が感光体の寿命を損うものであった。The demand for the reliability of these photoreceptors to maintain high image quality over a long period of time is increasing year by year. However, when the photoconductive layer is exposed, damage caused by corona discharge during the charging process and physical or chemical damage caused by contact with other members during the copying process shorten the life of the photoreceptor.
このような欠点を解消する方法として感光体表面に保護
層を設ける技術が知られている。As a method for eliminating such drawbacks, a technique is known in which a protective layer is provided on the surface of the photoreceptor.
具体的には感光層の表面に有機フィルムを設ける方法（
特公昭３８−１５４４６ ） 、無機酸化物を設ける方
法（特公昭４３−１４５１７ ） 、接着層を設けた後
絶縁層を積層する方法（特公昭４３−２７５９１）、或
いはプラズマＣＶＤ法・光ＣＶＤ法等によってａ−３ｉ
層、ａ−３ｉ：Ｎ：８層、ａ−３ｉ：Ｏ：８層等を積層
する方法（特開昭５７−１７９８５９、特開昭５９−５
８４３７）が開示されている。Specifically, a method of providing an organic film on the surface of the photosensitive layer (
Japanese Patent Publication No. 38-15446), method of providing an inorganic oxide (Japanese Patent Publication No. 43-14517), method of laminating an insulating layer after providing an adhesive layer (Japanese Patent Publication No. 43-27591), plasma CVD method, photoCVD method, etc. by a-3i
A method of laminating layers, a-3i:N:8 layers, a-3i:O:8 layers, etc. (JP-A-57-179859, JP-A-59-5
8437) has been disclosed.
しかしながら保護層が電子写真的に高抵抗（ｉＱ１４Ω
・ｃｍ以上〉になると、残留電位の増大、くり返し時の
蓄積等が問題となり、実用上好ましくない。However, the protective layer has high electrophotographic resistance (iQ14Ω).
・cm or more>, problems such as an increase in residual potential and accumulation upon repeated use occur, which is not preferred in practice.
上記欠点を補う技術として保護層を光導電層とする方法
（特公昭４８−３８４２７ 、特公昭４３−１６１９８
、特公昭４９−１０２５８ 、Ｕ Ｓ ｐ −２９０
１３４８）、保護層中に色素やルイス酸に代表される移
動剤を添加する方法（特公昭４４−８３４、特開昭５３
−１３３４４４＞ 、或いは金属ヤ金属酸化物微粒子の
添加により保護層の抵抗を制御する方法（特開昭５３−
３３３８）等が提案されている。A method of using a photoconductive layer as a protective layer as a technique to compensate for the above drawbacks (Japanese Patent Publication No. 48-38427, Japanese Patent Publication No. 43-16198)
, Special Publication No. 49-10258, U.S. p-290
1348), a method of adding a transfer agent such as a dye or a Lewis acid to the protective layer (Japanese Patent Publication No. 44-834, Japanese Patent Application Laid-Open No. 1987-53
-133444> or a method of controlling the resistance of a protective layer by adding metal oxide fine particles
3338) etc. have been proposed.
しかし、このような場合には保護層による光の吸収が生
じ、感光層へ到達する光量が減少するため結果として感
光体の感度が低下するという問題が生じる（いわゆるフ
ィルター効果）。However, in such a case, light is absorbed by the protective layer and the amount of light reaching the photosensitive layer is reduced, resulting in a problem that the sensitivity of the photoreceptor is reduced (so-called filter effect).
また、特開昭５７−３０８４６に提案されているように
平均粒径０．３μｍ以下の金属酸化物を抵抗制御剤とし
て保護層中に分散させることにより、可視光に対し実質
的に透明とする方法もおるが、実際には０．３μｍ以上
の粒子も多く存在するため、可視光の吸収、散乱が生じ
、感光体の感度が低下する。また、微粒子分散系保護層
を持つ感光体特有の問題として解像度の低下という現象
も生じ易い。Furthermore, as proposed in JP-A-57-30846, by dispersing metal oxides with an average particle size of 0.3 μm or less in the protective layer as a resistance control agent, the protective layer can be made substantially transparent to visible light. Although there are many methods, in reality there are many particles with a diameter of 0.3 μm or more, which causes absorption and scattering of visible light, reducing the sensitivity of the photoreceptor. In addition, a problem unique to photoreceptors having a protective layer containing fine particles is a decrease in resolution.
さらに樹脂中に微粒子を均一分散させるという製造技術
上の課題が存在し、製造原価の増大にもつながる。Furthermore, there is a manufacturing technology problem in uniformly dispersing the fine particles in the resin, which also leads to an increase in manufacturing costs.
これらの問題を副作用を伴なうことなくすべて解決でき
る技術はまだ完成されていない。A technology that can solve all of these problems without causing side effects has not yet been perfected.
［目 的］
本発明の目的は一従来技術の上記問題点を解決して高い
透明性、機械的強度を備え、特に、湿度等の環境条件の
変化に対して安定な保護層を設けることにより、高画質
かつ耐久性のある電子写真用感光体を提供することにお
る。[Objective] The object of the present invention is to solve the above-mentioned problems of the prior art by providing a protective layer that has high transparency and mechanical strength, and is particularly stable against changes in environmental conditions such as humidity. Our objective is to provide an electrophotographic photoreceptor with high image quality and durability.
［構 成］
上記目的を達成するため、本発明の構成は導電性支持体
上に光導電層および低抵抗保護層を順次積層した電子写
真感光体において、この低抵抗保護層が、
（イ）ケイ素及び酸素の含有量が
６３．５〜８０．５ｗｔ％
（ロ）炭素の含有量が １５〜２５ｗｔ％（ハ
）水素の含有量が ３〜ａ ｗｔ％（ニ）窒素
の含有量が １．５〜３．５ｗｔ％の範囲にあるけ
い素樹脂よりなる電子写真用感光体である。[Structure] In order to achieve the above object, the structure of the present invention is an electrophotographic photoreceptor in which a photoconductive layer and a low-resistance protective layer are sequentially laminated on a conductive support, in which the low-resistance protective layer has (a) Silicon and oxygen content: 63.5-80.5 wt% (b) Carbon content: 15-25 wt% (c) Hydrogen content: 3-a wt% (d) Nitrogen content: 1. This is an electrophotographic photoreceptor made of silicone resin in a range of 5 to 3.5 wt%.
本発明に用いられるけい素樹脂は
（１）アルコキシ基含有ポリシロキサン（２）水［３含
有ポリシロキサン
（３）炭素原子に結合したアミン基、イミノ基もしくは
ニトリル基を少なくとも１個とアルコキシ基が２乃至３
個結合したけい素原子を有する有機けい素化合物を主成
分とする組成物から成る。The silicone resin used in the present invention is (1) an alkoxy group-containing polysiloxane (2) a water [3-containing polysiloxane (3) at least one amine, imino, or nitrile group bonded to a carbon atom and an alkoxy group. 2 to 3
It consists of a composition whose main component is an organosilicon compound having individually bonded silicon atoms.
本発明の低抵抗保護層を形成するには上記各成分をリグ
ロイン、ヘキサン等適当な溶剤に溶解させた溶液を光導
電層上に直接あるいは中間層を介して塗布後乾燥あるい
は加熱硬化させればよい。To form the low-resistance protective layer of the present invention, a solution prepared by dissolving each of the above components in a suitable solvent such as ligroin or hexane is applied onto the photoconductive layer directly or through an intermediate layer, and then dried or cured by heating. good.
硬化した低抵抗保護層中の３ｉ及びＯの含有量はこの保
護層全量に対して６３．５〜８０．５Ｗｔの範囲、かつ
Ｃ，Ｈ，Ｎの含有量は保護層全量に対してそれぞれＣ：
１５〜２５ｗｔ％、Ｈ：３〜８ ｗｔ％、Ｎ：１．５〜
３．５ｗｔ％の範囲にあることが保護層の比抵抗の点か
ら好ましい。The content of 3i and O in the cured low-resistance protective layer is in the range of 63.5 to 80.5 Wt based on the total amount of this protective layer, and the content of C, H, and N is in the range of C, H, and N, respectively, based on the total amount of the protective layer. :
15-25 wt%, H: 3-8 wt%, N: 1.5-
The content is preferably in the range of 3.5 wt% from the viewpoint of specific resistance of the protective layer.
保護層の膜厚は０．５〜３０μｍ１好ましくは１〜１０
μｍである。この厚さが０．５μｍ以下では保護層の機
械的強度が弱く、かつ耐摩耗性が小さく長期の使用に対
して保護層の効果がなくなり、３０μｍ以上では保護層
中に電荷が蓄積され、くり返し使用時に残留電位が増大
する。The thickness of the protective layer is 0.5 to 30 μm, preferably 1 to 10 μm.
It is μm. If the thickness is less than 0.5 μm, the mechanical strength of the protective layer is weak and the wear resistance is low, making the protective layer ineffective for long-term use. If the thickness is more than 30 μm, charges will accumulate in the protective layer and Residual potential increases during use.
この保護層は上記けい素樹脂中に抵抗制御剤を混合もし
くは分散し、光導電層上にディッピングもしくはスプレ
ー塗布し、おるいはフィルム状にした後接着することに
より形成される。This protective layer is formed by mixing or dispersing a resistance control agent in the silicone resin, coating the photoconductive layer by dipping or spraying, or forming it into a film and then adhering it.
保護層の比抵抗は１×１０１０〜１Ｘ１０１４Ωｃｍで
おり、好ましくは１Ｘ １０１１〜’ｌ Ｘ １０１２
Ωｃｍである。比抵抗が’１ｘｌＯ”０ｃｍ未満では電
荷保持能力が低く、画像ボケが生じ、１Ｘ１０１４Ωｃ
ｍを越えると残留電位が大ぎく、地汚れが生じる。The specific resistance of the protective layer is 1×1010 to 1×1014 Ωcm, preferably 1×1011 to 1×1012
It is Ωcm. If the resistivity is less than '1xlO'0cm, the charge retention ability will be low and image blur will occur.
If it exceeds m, the residual potential will be too large and background stains will occur.
さらに光導電層としては３ｅ、３ｅ−Ｔｅ、ＡＳ２Ｓｅ
３等のＳｅ合金、ＺｎＯ，ＣｄＳ。Furthermore, as a photoconductive layer, 3e, 3e-Te, AS2Se
3 grade Se alloy, ZnO, CdS.
ＣｄＳｅ等のｎ −Ｖｌ族化合物の粒子を樹脂に分散さ
せたもの、ポリビニルカルバゾール等の有機光導電材料
、あるいはａ−３ｉ等が用いられる。Used are particles of an n-Vl group compound such as CdSe dispersed in a resin, an organic photoconductive material such as polyvinylcarbazole, or a-3i.
光導電層の構成は特に制約がなく、単層でも電荷発生層
と電荷輸送層の積層であってもかまわない。There are no particular restrictions on the structure of the photoconductive layer, and it may be a single layer or a stack of a charge generation layer and a charge transport layer.
ざらに保護層と光導電層との間に密着性を高めるための
接着層や電荷注入を阻止するための電気的バリア一層を
設けてもよい。In addition, an adhesive layer for increasing adhesion or an electrical barrier layer for preventing charge injection may be provided between the protective layer and the photoconductive layer.
導電性支持体としては導電体あるいは導電処理をした絶
縁体が用いられる。たとえばＡＩ、Ｎ ｉ、Ｆｅ、Ｃｕ
、Ａｕなどの金属あるいは合金、ポリエステル、ポリカ
ーボネート、ポリイミド、ガラス等の絶縁性基体上にＡ
Ｉ、ＡＱ、ＡＵ等の金属あるいは
Ｉｎ２Ｏ：＋、５ｒｌＯ２等の導電材料の薄膜を形成し
たもの、導電処理をした紙等が例示できる。As the conductive support, a conductor or an insulator treated for conductivity is used. For example, AI, Ni, Fe, Cu
, A on an insulating substrate such as metal or alloy such as Au, polyester, polycarbonate, polyimide, glass, etc.
Examples include those formed with a thin film of a metal such as I, AQ, and AU, or a conductive material such as In2O:+, 5rlO2, and paper that has been subjected to conductive treatment.
また導電性支持体の形状は特に制約はなく必要に応じて
板状、ドラム状、ベルト状のものが用いられる。Further, there are no particular restrictions on the shape of the conductive support, and plate-like, drum-like, or belt-like ones may be used as required.
以下本発明に於ける実施例および比較例を示す。Examples and comparative examples of the present invention will be shown below.
実施例１
アルミニウム素管（ａｏｍｍφＸ ３４０ｍｍ１）を前
処理（洗浄）を施した後、真空蒸着装置内にセントしＡ
Ｓ２Ｓｅ３合金を支持体上の膜厚が６０μｍになるよう
に下記条件で抵抗加熱蒸着を行ない光導電層を作製した
。Example 1 After pre-treating (cleaning) an aluminum tube (aommφX 340mm1), it was placed in a vacuum evaporator and
A photoconductive layer was prepared by resistive heating vapor deposition of S2Se3 alloy on a support to a film thickness of 60 μm under the following conditions.
蒸着条件
真空度 ３Ｘ １０−６ Ｔｏｒｒ
支持体温度 ２００℃
ボート温度 ４５０℃
次にこの光導電層上に保護層形成液、すなわち、アルコ
キシ基含有ポリシロキサンと水酸基含有ポリシロキサン
と炭素原子に結合したアミノ基を少なくとも１個とアル
コキシが２〜３個結合したけい素原子を有する有機けい
素化合物を主成分とするけい素樹脂ＡＹ４２−４４０
（東しシリコーン社製〉とＡＹ４２−４４１（東しシ
リコーン社製）とを重量比で３：１となるように混合し
たりグロイン溶液（固形分３０％）を作製し、光導電層
上に乾燥後の膜厚が３μｍになるように塗布し、１２０
’Ｃ１１時間で乾燥し、保護層を形成した。そのときの
保護膜の組成を表１に示す。Vapor deposition conditions Vacuum degree: 3X 10-6 Torr Support temperature: 200°C Boat temperature: 450°C Next, a protective layer forming solution, that is, an alkoxy group-containing polysiloxane, a hydroxyl group-containing polysiloxane, and an amino bonded to a carbon atom, is deposited on the photoconductive layer. Silicon resin AY42-440 whose main component is an organosilicon compound having a silicon atom bonded to at least one group and 2 to 3 alkoxy atoms.
(manufactured by Toshi Silicone Co., Ltd.) and AY42-441 (manufactured by Toshi Silicone Co., Ltd.) at a weight ratio of 3:1 or prepare a groin solution (solid content 30%) and apply it on the photoconductive layer. Apply so that the film thickness after drying is 3 μm,
It was dried for 11 hours to form a protective layer. Table 1 shows the composition of the protective film at that time.
また、Ａ１を蒸着した石英ガラス上に、上記保護膜を形
成し、ざらにＡ１電極を蒸着によって作製し、抵抗測定
用の試料とした。Further, the above-mentioned protective film was formed on the quartz glass on which A1 had been vapor-deposited, and a rough A1 electrode was fabricated by vapor deposition, which was used as a sample for resistance measurement.
実施例２
保護層形成液を上記Ａ Ｙ ４２−４４０とＡＹ４２−
４４１の１：１（重量比）混合溶液に代えた他は実施例
１と同様にして感光体および抵抗測定用の試料を作製し
た。Example 2 The protective layer forming liquid was used as the above AY 42-440 and AY42-
A photoreceptor and a sample for resistance measurement were prepared in the same manner as in Example 1, except that a 1:1 (weight ratio) mixed solution of 441 was used.
そのときの保護膜の組成を表１に示す。Table 1 shows the composition of the protective film at that time.
実施例３
保護層形成液を上記Ａ Ｙ ４２−４４０とＡＹ４２−
４４１との１対３（重量比）混合溶液に代えた以外は実
施例１と同じ条件で感光体および抵抗測定用の試料を作
製した。Example 3 The protective layer forming liquid was used as the above AY 42-440 and AY42-
A photoreceptor and a sample for resistance measurement were prepared under the same conditions as in Example 1, except that a 1:3 (weight ratio) mixed solution with 441 was used.
そのときの保護膜の組成を表１に示す。Table 1 shows the composition of the protective film at that time.
比較例１および２
実施例における保護層形成液の成分である上記有機けい
素化合物をＡ Ｙ ４２−４４０のみに代えたものを比
較例１とし、同じく、有機けい素化合物をＡ Ｙ ４２
−４４１のみに代えたものを比較例２とし、その他の条
件はすべて実施例１と同様にして感光体および抵抗測定
用の試料を作製した。Comparative Examples 1 and 2 Comparative Example 1 was obtained by replacing the above organosilicon compound, which is a component of the protective layer forming liquid, with only AY 42-440, and similarly, the organosilicon compound was replaced with AY 42.
Comparative Example 2 was prepared by replacing only -441, and all other conditions were the same as in Example 1 to prepare a photoreceptor and a sample for resistance measurement.
そのときの保護膜の組成を表１に示す。Table 1 shows the composition of the protective film at that time.
（単位はｗｔ％）
上記のようにして）ｑだ本発明の感光体（実施例１〜３
）と比較用の感光体（比較例１．２）の各種特性を評価
した。(Unit: wt%) Photoreceptor of the present invention (Examples 1 to 3)
) and a comparative photoreceptor (Comparative Example 1.2) were evaluated for various characteristics.
まずコロナ放電電圧６ｋｖ、露光量１２μＷ／Ｃｍ’の
条件で帯電、露光を行ない電子写真特性を評価し、露光
後３０秒後の残留電位を測定した。First, charging and exposure were performed under the conditions of a corona discharge voltage of 6 kV and an exposure amount of 12 μW/Cm' to evaluate the electrophotographic characteristics, and the residual potential 30 seconds after exposure was measured.
次にカールソン方式を用いた複写機を用いて画像テスト
を行ない解像力を評価した。Next, an image test was conducted using a copying machine using the Carlson method to evaluate the resolution.
ざらに抵抗用サンプルを用いて印加電圧１０■で電圧印
力旧麦１分後に保護層中に流れる電流を測定し比抵抗を
求めた。これらの結果を表２に示す。Using a rough resistance sample, an applied voltage of 10 cm was applied, and after 1 minute of voltage application, the current flowing through the protective layer was measured to determine the specific resistance. These results are shown in Table 2.
表２ 特性一覧
この結果より本発明は残留電位の増加並びに解像力の低
下を引き起こすことがなく良好な電子写真特性を示すこ
とがわかる。Table 2 List of Properties The results show that the present invention exhibits good electrophotographic properties without causing an increase in residual potential or a decrease in resolution.
さらに本発明品について複写枚数３０万枚の耐久試験を
行なった結果、異常画像は認められず初期と同様に良好
な画像特性を示した。Furthermore, as a result of a durability test of 300,000 copies of the product of the present invention, no abnormal images were observed and the product exhibited good image characteristics as in the initial stage.
［効 果］
以上説明したように本発明によれば、高い透明性と機械
的強度を備えた低抵抗保護層を形成することができ、耐
久性のある信頼性の高い感光体が得られる。[Effects] As explained above, according to the present invention, a low-resistance protective layer with high transparency and mechanical strength can be formed, and a durable and highly reliable photoreceptor can be obtained.
Claims (1)
層した電子写真感光体においてこの低抵抗保護層が、 （イ）けい素および酸素の含有量が ６３．５〜８０
．５ｗｔ％ （ロ）炭素の含有量が １５〜２５ｗｔ
％ （ハ）水素の含有量が ３〜８ｗｔ％ （ニ）窒素の含有量が １．５〜３．５
ｗｔ％の範囲にあるけい素樹脂よりなることを特徴とす
る電子写真用感光体。[Claims] In an electrophotographic photoreceptor in which a photoconductive layer and a low-resistance protective layer are sequentially laminated on a conductive support, the low-resistance protective layer (a) has a silicon and oxygen content of 63.5. ~80
．． 5wt% (b) Carbon content is 15-25wt
% (c) Hydrogen content is 3 to 8 wt% (d) Nitrogen content is 1.5 to 3.5
A photoreceptor for electrophotography, characterized in that it is made of a silicone resin in a range of wt%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12795487A JPS63293553A (en) | 1987-05-27 | 1987-05-27 | Electrophotographic sensitive body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12795487A JPS63293553A (en) | 1987-05-27 | 1987-05-27 | Electrophotographic sensitive body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63293553A true JPS63293553A (en) | 1988-11-30 |
Family
ID=14972755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12795487A Pending JPS63293553A (en) | 1987-05-27 | 1987-05-27 | Electrophotographic sensitive body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63293553A (en) |
-
1987
- 1987-05-27 JP JP12795487A patent/JPS63293553A/en active Pending
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