JPS63292149A - Electrophotographic sensitive body - Google Patents
Electrophotographic sensitive bodyInfo
- Publication number
- JPS63292149A JPS63292149A JP12694187A JP12694187A JPS63292149A JP S63292149 A JPS63292149 A JP S63292149A JP 12694187 A JP12694187 A JP 12694187A JP 12694187 A JP12694187 A JP 12694187A JP S63292149 A JPS63292149 A JP S63292149A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- interlayer
- intermediate layer
- protective layer
- photoreceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims abstract description 59
- 239000011241 protective layer Substances 0.000 claims abstract description 22
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 4
- 108091008695 photoreceptors Proteins 0.000 claims description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 229920002050 silicone resin Polymers 0.000 abstract description 4
- 238000010030 laminating Methods 0.000 abstract description 3
- 238000003618 dip coating Methods 0.000 abstract description 2
- 238000005507 spraying Methods 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 14
- -1 AS23e3 Inorganic materials 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 239000011669 selenium Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 150000002484 inorganic compounds Chemical class 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 229910001370 Se alloy Inorganic materials 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000410 antimony oxide Inorganic materials 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 150000003961 organosilicon compounds Chemical group 0.000 description 2
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- BLBNEWYCYZMDEK-UHFFFAOYSA-N $l^{1}-indiganyloxyindium Chemical compound [In]O[In] BLBNEWYCYZMDEK-UHFFFAOYSA-N 0.000 description 1
- YOBOXHGSEJBUPB-MTOQALJVSA-N (z)-4-hydroxypent-3-en-2-one;zirconium Chemical compound [Zr].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O YOBOXHGSEJBUPB-MTOQALJVSA-N 0.000 description 1
- FKNIDKXOANSRCS-UHFFFAOYSA-N 2,3,4-trinitrofluoren-1-one Chemical compound C1=CC=C2C3=C([N+](=O)[O-])C([N+]([O-])=O)=C([N+]([O-])=O)C(=O)C3=CC2=C1 FKNIDKXOANSRCS-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000011538 cleaning material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 210000004013 groin Anatomy 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000001841 imino group Chemical group [H]N=* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000002560 nitrile group Chemical group 0.000 description 1
- 239000005486 organic electrolyte Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/14—Inert intermediate or cover layers for charge-receiving layers
- G03G5/147—Cover layers
- G03G5/14708—Cover layers comprising organic material
- G03G5/14713—Macromolecular material
- G03G5/14747—Macromolecular material obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- G03G5/14773—Polycondensates comprising silicon atoms in the main chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
- G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/14—Inert intermediate or cover layers for charge-receiving layers
- G03G5/142—Inert intermediate layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/14—Inert intermediate or cover layers for charge-receiving layers
- G03G5/142—Inert intermediate layers
- G03G5/144—Inert intermediate layers comprising inorganic material
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/14—Inert intermediate or cover layers for charge-receiving layers
- G03G5/147—Cover layers
- G03G5/14708—Cover layers comprising organic material
- G03G5/14713—Macromolecular material
- G03G5/14791—Macromolecular compounds characterised by their structure, e.g. block polymers, reticulated polymers, or by their chemical properties, e.g. by molecular weight or acidity
Abstract
Description
【発明の詳細な説明】
[技術分野]
本発明は、電子写真感光体、特に、光導電層の表面に保
護層を有する電子写真感光体の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an electrophotographic photoreceptor, particularly to an improvement in an electrophotographic photoreceptor having a protective layer on the surface of a photoconductive layer.
[従来技術]
従来、電子写真用感光体としては、導電性支持体上にセ
レンないしセレン合金を主体とする感光層を設けたもの
、酸化亜鉛、酸化カドミウムなどの無機光導電材料をバ
インダー中に分散させたもの、ポリ−N−ビニルカルバ
ゾールとトリニトロフルオレノンあるいはアゾ顔料など
の有機光導電材料を用いたもの及び非晶質シリコンを用
いたもの等が一般に知られている。[Prior Art] Conventionally, electrophotographic photoreceptors have been prepared by providing a photosensitive layer mainly made of selenium or selenium alloy on a conductive support, or by disposing an inorganic photoconductive material such as zinc oxide or cadmium oxide in a binder. Generally known are those using dispersed materials, those using organic photoconductive materials such as poly-N-vinylcarbazole and trinitrofluorenone or azo pigments, and those using amorphous silicon.
現在、最も高感度な電子写真用感光体としては、Se系
、特に3e−AS系
(As2Se2)感光体が知られているが、このものは
次のような問題点を包含する。At present, Se-based photoreceptors, particularly 3e-AS-based (As2Se2) photoreceptors, are known as the most sensitive electrophotographic photoreceptors, but these include the following problems.
■ 感光体表面のSe層がむき出しになっているため、
実使用中紙づまり等で簡単に傷が発生しやすい。■ Because the Se layer on the surface of the photoreceptor is exposed,
During actual use, it is easy to get scratched due to paper jams, etc.
■ 複写機内(現像剤、クリーニング部材等)あるいは
使用環境中に存在する特殊な化学物質等の吸着・汚染に
より、地汚れ、画像流れ等の異常画像を発生する。■ Abnormal images such as background smudges and image blurring occur due to the adsorption and contamination of special chemicals that exist within the copying machine (developers, cleaning materials, etc.) or in the environment in which it is used.
■ 同様に実使用中、紙、クリーニング部、現像部等に
より摩擦を受けSe層が摩擦し、コピー上にSeが付着
・排出される心配がある・。■ Similarly, during actual use, there is a risk that the Se layer will be rubbed by the paper, the cleaning section, the developing section, etc., and Se will adhere to or be discharged onto the copy.
■ 特に5e−As系感光体の場合、蒸着直接では表面
抵抗が十分に大きくなく、そのままでは帯電電位が不足
する場合がある。(2) In particular, in the case of a 5e-As photoreceptor, the surface resistance is not sufficiently large if the film is directly deposited by vapor deposition, and the charging potential may be insufficient if the film is directly deposited.
このような欠点を解消する方法として感光体表面に保護
層を設ける技術が知られている。As a method for eliminating such drawbacks, a technique is known in which a protective layer is provided on the surface of the photoreceptor.
具体的には感光層の表面に有機フィルムを設ける方法(
特公昭3B−15446) 、無機酸化物を設ける方法
(特公昭43−14517 ) 、接@層を設けた侵絶
縁層を積層する方法(特公昭43−27591)、或い
はプラズマCVD法・光CVD法等によってa−3i層
、a−3i:N:H層、a−3i:Q:H層等を積層す
る方法(特開昭57−179859、特開昭59−58
437)が開示されている。Specifically, a method of providing an organic film on the surface of the photosensitive layer (
Japanese Patent Publication No. 3B-15446), method of providing an inorganic oxide (Japanese Patent Publication No. 43-14517), method of laminating an insulating layer with a contact layer (Japanese Patent Publication No. 43-27591), or plasma CVD method/photoCVD method A method of laminating a-3i layer, a-3i:N:H layer, a-3i:Q:H layer, etc. (JP-A-57-179859, JP-A-59-58)
437) has been disclosed.
しかしながら保護層が電子写真的に高抵抗(10”Ω・
cm以上)になると、残留電位の増大、くり返し時の蓄
積等が問題となり、実用上好ましくない。However, the protective layer has a high electrophotographic resistance (10”Ω・
cm or more), problems arise such as an increase in residual potential and accumulation upon repeated use, which is not preferred from a practical standpoint.
上記欠点を補う技術として保護層を光導電層とする方法
(特公昭48−38427 、特公昭43−16198
、特公昭49−10258 、U S P −290
1348)、保r!J層中に色素ヤルイス酸に代表され
る移動剤を添加する方法(特公昭44−834、特開昭
53−133444> 、或いは金属や金属酸化物微粒
子の添加により保護層の抵抗を制御する方法(特開昭5
3−3338>等が提案されている。A method of using a photoconductive layer as a protective layer as a technique to compensate for the above drawbacks (Japanese Patent Publication No. 48-38427, Japanese Patent Publication No. 43-16198)
, Special Publication No. 49-10258, USP-290
1348), Ho! A method of adding a transfer agent typified by the dye Yaruis acid to the J layer (Japanese Patent Publication No. 44-834, JP-A-53-133444), or a method of controlling the resistance of the protective layer by adding metal or metal oxide fine particles. (Unexamined Japanese Patent Publication No. 5
3-3338> etc. have been proposed.
しかし、このような場合には保護層による光の吸収が生
じ、感光層へ到達する光伍が減少するため結果として感
光体の感度が低下するという問題が生じる(いわゆるフ
ィルター効果)。However, in such a case, the protective layer absorbs light, reducing the amount of light reaching the photosensitive layer, resulting in a problem of lowering the sensitivity of the photoreceptor (so-called filter effect).
また、特開昭57−30846に提案されているように
平均粒径0.3μm以下の金属酸化物を抵抗制御剤とし
て保護層中に分散させることにより、可視光に対し実質
的に透明とする方法もめるが、実際には0.3μm以上
の粒子も多く存在するため、可視光の吸収、散乱が生じ
、感光体の感度が低下する。また、微粒子分散系保護層
を持つ感光体特有の問題として解像度の低下という現象
も生じ易い。 1これらの保護層を持った感光
体は保護層を持たないものに比較して多少の改善効果が
みられるが、感光層などの種類により、保護層と感光層
との間の密着性の低下や帯電性が低下する現象がみられ
る。Furthermore, as proposed in JP-A-57-30846, by dispersing metal oxides with an average particle size of 0.3 μm or less in the protective layer as a resistance control agent, the protective layer can be made substantially transparent to visible light. The method is discussed, but in reality, there are many particles with a diameter of 0.3 μm or more, which causes absorption and scattering of visible light, reducing the sensitivity of the photoreceptor. In addition, a problem unique to photoreceptors having a protective layer containing fine particles is a decrease in resolution. 1 Photoreceptors with these protective layers show some improvement compared to those without a protective layer, but depending on the type of photosensitive layer, the adhesion between the protective layer and the photosensitive layer may decrease. There is a phenomenon in which the chargeability decreases.
これらの問題点を改善する手段として、保 i設層と感
光層との間に接着性を高めるための中間層や電荷注入を
阻止するための中間層を設けることが提案されている。As a means to improve these problems, it has been proposed to provide an intermediate layer between the storage layer and the photosensitive layer to improve adhesion or to prevent charge injection.
これらの中間層として、無機化合物を主成分として含有
する中間層(特開昭57−30843)、有機高分子化
合物を主成分として含有する中間層(特開昭57−30
844)、有機金属化合物を主成分として含有する中間
層(特開昭58−6074B 、特開昭58−1216
43、特開昭58−121045)等が開示されている
が、低湿時には良好な画面が得られても、高温時には解
像度が低下する現象がみられ、これらの問題をすべて解
決できる技術はまだ完成されていない。These intermediate layers include an intermediate layer containing an inorganic compound as a main component (JP-A-57-30843), an intermediate layer containing an organic polymer compound as a main component (JP-A-57-30).
844), an intermediate layer containing an organometallic compound as a main component (JP-A-58-6074B, JP-A-58-1216)
43, Japanese Patent Application Laid-open No. 58-121045), etc., but even if a good screen is obtained in low humidity, the resolution deteriorates in high temperature, and the technology that can solve all of these problems has not yet been completed. It has not been.
目 的]
本発明の目的は従来技術の上記問題点を解決して高い透
明性、機械的強度を備え、特に、湿度等の環境条件の変
化に対して安定な保護層を設けることにより、高画質か
つ耐久性のある電子写真用感光体を提供することにある
。Purpose] The purpose of the present invention is to solve the above-mentioned problems of the prior art, provide high transparency and mechanical strength, and in particular provide a protective layer that is stable against changes in environmental conditions such as humidity. An object of the present invention is to provide an electrophotographic photoreceptor with high image quality and durability.
構 成]
上記目的を達成するため、本発明の構成は導電性支持体
上に感光層、中間層、及び表面保護層を順次積層した電
子写真感光体において
中間層が中間層全最に対して
(イ)ケイ素及び酸素の含有量が50〜aawt%(ロ
)炭素の含有量が 10〜30wt%(ハ)水
素の含有量が 1〜10wt%(ニ)窒素の含
有量が 1〜10wt%の範囲にあるけい素樹
脂よりなる電子写真用感光体である。[Structure] In order to achieve the above object, the structure of the present invention is such that in an electrophotographic photoreceptor in which a photosensitive layer, an intermediate layer, and a surface protective layer are sequentially laminated on a conductive support, the intermediate layer is stacked on top of the entire intermediate layer. (a) Silicon and oxygen content: 50-aawt% (b) Carbon content: 10-30wt% (c) Hydrogen content: 1-10wt% (d) Nitrogen content: 1-10wt% This is an electrophotographic photoreceptor made of a silicone resin within the range of .
本発明に用いられる感光体の感光層としては3e、5e
−Te、AS23e3等のSe合金、ZnO,CdS、
CdSe等のIt −Vl族化合物の粒子を樹脂に分散
させたもの、ポリビニルカルバゾール等の有機光導電材
料、あるいはa−3i等が用いられる。The photosensitive layer of the photoreceptor used in the present invention is 3e, 5e.
-Te, Se alloys such as AS23e3, ZnO, CdS,
Used are particles of It-Vl group compounds such as CdSe dispersed in resin, organic photoconductive materials such as polyvinylcarbazole, or a-3i.
感光層の構成は特に制約がなく、単層でも電荷発生層と
電荷輸送層の積層であってもかまわない。There are no particular restrictions on the structure of the photosensitive layer, and it may be a single layer or a stack of a charge generation layer and a charge transport layer.
本発明に用いられる3e−Asを主体とする感光層はA
s、3e原子の組成がAS:0.1〜45wt%、S
e : 55〜99.9wt%の範囲内におり、この感
光層の場合も単層でも複数層でも構わない。また、感光
層はAs、3e以外にハロゲン、Te、3b、3 i等
の添加物の1種又は2種以上の元素を含有してもよい。The photosensitive layer mainly composed of 3e-As used in the present invention is A
The composition of s, 3e atoms is AS: 0.1 to 45 wt%, S
e: within the range of 55 to 99.9 wt%, and this photosensitive layer may be a single layer or multiple layers. Further, the photosensitive layer may contain one or more elements of additives such as halogen, Te, 3b, and 3i in addition to As and 3e.
感光層の形成法としてはAs、3eが上記条件を満足す
る量の合金を作製して蒸着するか、複数の蒸発源に材料
単体あるいは合金を入れて共蒸着すればよい。As a method for forming the photosensitive layer, an alloy containing As and 3e in an amount satisfying the above conditions may be prepared and vapor-deposited, or a single material or an alloy may be placed in a plurality of evaporation sources and co-evaporated.
本発明に用いられるけい素樹脂は
(1)アルコキシ基含有ポリシロキサン(2)水酸基含
有ポリシロキサン
(3)炭素原子に結合したアミノ基、イミノ基もしくは
ニトリル基を少なくとも1個とアルコキシ基が2乃至3
個結合したけい素原子を有する有機けい素化合物を主成
分とする組成物から成る。The silicone resin used in the present invention has (1) an alkoxy group-containing polysiloxane (2) a hydroxyl group-containing polysiloxane (3) at least one amino group, imino group, or nitrile group bonded to a carbon atom and two or more alkoxy groups. 3
It consists of a composition whose main component is an organosilicon compound having individually bonded silicon atoms.
本発明の中間層を形成するには上記各成分をリグロイン
、ヘキサン等適当な溶剤に溶解させた溶液を光導電層上
に塗布後乾燥おるいは加熱硬化させればよい。To form the intermediate layer of the present invention, a solution prepared by dissolving each of the above components in a suitable solvent such as ligroin or hexane may be applied onto the photoconductive layer and then dried or cured by heating.
硬化した中間層中の3i及びOの含有量は中間層全量に
対して50〜88Wtの範囲、かつ01H,Nの含有量
は中間層全量に対してそれぞれC:10〜30wt%、
H:1〜10wt%、N:1〜10wt%の範囲にある
ことが必要である。The content of 3i and O in the hardened intermediate layer is in the range of 50 to 88 Wt based on the total amount of the intermediate layer, and the content of 01H and N is C: 10 to 30 wt%, respectively, based on the total amount of the intermediate layer.
It is necessary that H: 1 to 10 wt% and N: 1 to 10 wt%.
中間層の膜厚は任意に設定されるが5μm以下、好まし
くは1μm以下、特に0.5μm以下が好適である。中
間層の形成は浸漬法、スプレー法などの方法により成膜
することができる。The thickness of the intermediate layer can be arbitrarily set, but it is preferably 5 μm or less, preferably 1 μm or less, particularly 0.5 μm or less. The intermediate layer can be formed by a dipping method, a spray method, or the like.
本発明に用いられる保護層としては有機高分子化合物に
有機化合物又は無機化合物などの導電制御剤を適当量添
加したものが用いられる。具体的には有機化合物として
はアニオン系、カチオン系、非イオン系の有機電解質な
ど、無機化合物としては金、銀、銅、ニッケル、アルミ
ニウム等の金属、酸化亜鉛、酸化チタン、酸化スズ、酸
化インジウム、及び酸化アンチモン含有酸化スズ、酸化
インジウム含有酸化スズなどの金属酸化物が挙げられ、
これらの混合物も用いられる。The protective layer used in the present invention is made of an organic polymer compound to which a suitable amount of a conductivity control agent such as an organic compound or an inorganic compound is added. Specifically, organic compounds include anionic, cationic, and nonionic organic electrolytes, and inorganic compounds include metals such as gold, silver, copper, nickel, and aluminum, zinc oxide, titanium oxide, tin oxide, and indium oxide. , and metal oxides such as tin oxide containing antimony oxide and tin oxide containing indium oxide,
Mixtures of these may also be used.
膜厚は0.5〜30μm、好ましくは1〜10μmであ
る。この厚さが0.5μm以下では保護層の機械的強度
が弱く、かつ耐摩耗性が小さく長期の使用に対して保護
層の効果がなくなり、30μm以上では保護層中に電荷
が蓄積され、くり返し使用時に残留電位が増大する。The film thickness is 0.5 to 30 μm, preferably 1 to 10 μm. If the thickness is less than 0.5 μm, the mechanical strength of the protective layer is weak and the wear resistance is low, making the protective layer ineffective for long-term use. If the thickness is more than 30 μm, charges will accumulate in the protective layer and Residual potential increases during use.
この保iiJ層は上記けい素樹脂中に抵抗制御剤を混合
もしくは分散し、光導電層上にディッピングもしくはス
プレー塗布し、あるいは ゛フィルム状にした
後接着することにより形成される。This retaining layer is formed by mixing or dispersing a resistance control agent in the silicone resin and applying the mixture by dipping or spraying onto the photoconductive layer, or by forming it into a film and then adhering it.
保護層の比抵抗は1xio”〜1X10詞Ωcmであり
、好ましくは’l X 1011〜’l X 1012
Ωcmでおる。比抵抗が1×10I@Ωcm以下では電
荷保持能力が低く、画像ボケが生じ、’lXl0”ΩC
11I以上では残留電位が大きく、地汚れが生しる。The specific resistance of the protective layer is 1 x 10'' to 1 x 10 Ωcm, preferably 1 x 1011 to 10 12
It's Ωcm. When the resistivity is less than 1×10I@Ωcm, the charge retention ability is low, image blurring occurs, and 'lXl0''ΩC
If it is 11I or more, the residual potential is large and background stains occur.
導電性支持体としては導電体あるいは導電処理をした絶
縁体が用いられる。たとえばAI、Ni、Fe5Cu、
Auなどの金属あるいは合金、ポリエステル、ポリカー
ボネート、ポリイミド、ガラス等の絶縁性基体上にA
I 、AQ、AU等の金属あるいはIn2Oゴ、5n0
2等の導電材料の薄膜を形成したもの、導電処理をした
紙等が例示できる。As the conductive support, a conductor or an insulator treated for conductivity is used. For example, AI, Ni, Fe5Cu,
A on an insulating substrate such as metal or alloy such as Au, polyester, polycarbonate, polyimide, glass, etc.
Metals such as I, AQ, AU or In2O, 5n0
Examples include those formed with a thin film of conductive material such as No. 2, and paper treated with conductive treatment.
また導電性支持体の形状は特に制約はなく必要に応じて
板状、ドラム状、ベルト状のものが用いられる。Further, there are no particular restrictions on the shape of the conductive support, and plate-like, drum-like, or belt-like ones may be used as required.
以下本発明に於ける実施例および比較例を示す。Examples and comparative examples of the present invention will be shown below.
実施例1
アルミニウム素管(aommφx 340mm1 )を
前処理(洗浄)を施した後、真空蓋@装置内にセットし
AS2Se3合金を支持体上の膜厚が60μmになるよ
うに下記条件で抵抗加熱蒸着を行ない光導電層を作製し
た。Example 1 After pre-treating (cleaning) an aluminum tube (aommφx 340mm1), it was placed in a vacuum lid @ device and AS2Se3 alloy was resistance heated vapor-deposited on the support under the following conditions so that the film thickness was 60 μm. A photoconductive layer was prepared by performing the following steps.
蒸着条件
真空度 3X 10−6 Torr
支持体温度 200℃
ボート温度 450℃
次にこの光導電層上に中間層形成液、すなわち、アルコ
キシ基含有ポリシロキサンと水酸基含有ポリシロキサン
と炭素原子に結合したアミノ基を少なくとも1個とアル
コキシが2〜3個結合したけい素原子を有する有機けい
素化合物を主成分とするけい素樹脂(東シリコーン社製
、AY42−441)のりグロイン溶液(固形分5%)
を膜厚がO12μmになるように塗布し、100℃、2
時間で乾燥し中間層を作製した。Vapor deposition conditions Vacuum degree: 3X 10-6 Torr Support temperature: 200°C Boat temperature: 450°C Next, an intermediate layer forming solution, that is, an alkoxy group-containing polysiloxane, a hydroxyl group-containing polysiloxane, and an amino bonded to a carbon atom, is deposited on the photoconductive layer. Silicon resin (AY42-441 manufactured by Toshi Silicone Co., Ltd.) glue groin solution (solid content 5%) whose main component is an organosilicon compound having a silicon atom with at least one group and 2 to 3 alkoxy atoms bonded
was applied to a film thickness of 12 μm, and heated at 100°C for 2
After drying for a while, an intermediate layer was prepared.
ざらにこの上にスチレン−メタクリル酸−アクリル酸−
N−メチロールアクリルアミド樹脂液(固形分4owt
%) 30@ffi部と酸化アンチモンtowt含有酸
化スズ粉末10重量部と適当量の溶媒を加え、ボールミ
ルにて72時間分散した分散液を浸漬塗布し120℃で
30分乾燥し、約5μの保護層を設けた。Styrene-methacrylic acid-acrylic acid-
N-methylol acrylamide resin liquid (solid content 4 owt
%) 30@ffi parts, 10 parts by weight of tin oxide powder containing antimony oxide towt, and an appropriate amount of solvent were added and dispersed in a ball mill for 72 hours.The dispersion was applied by dip coating and dried at 120°C for 30 minutes to give a protection of about 5μ. Layers were set up.
この感光体の中間層の組成を元素分析した結果、
3i及びOの含有量 67.8wt%Cの含有量
22.7wt%Hの含有量
5.8wt%Nの含有量 3.7
wt%であった。As a result of elemental analysis of the composition of the intermediate layer of this photoreceptor, the content of 3i and O 67.8wt%C content 22.7wt%H content
5.8wt%N content 3.7
It was wt%.
比較例1
中間層形成液を下記の組成に変えた他は実施例と全く同
様にして感光体を作製した。Comparative Example 1 A photoreceptor was produced in exactly the same manner as in Example except that the composition of the intermediate layer forming liquid was changed to the following.
中間層形成液
ジルコニウムアセチルアセトネート
2重問部
γ−メタアクリロキシプロピルトリメトキシシラン(信
越化学社製KBM 503)1重量部
n−ブタノール 40重量部上記のようにし
て得た実施例1と比較例1について放電電圧6kV、露
光量11.5μW/Cm2の条件で帯電、露光を行い表
面電位が100OV→200Vに減水する感度(μJ/
Cm2)を求め比較した。Intermediate layer forming liquid Zirconium acetylacetonate double interlayer γ-methacryloxypropyltrimethoxysilane (KBM 503 manufactured by Shin-Etsu Chemical Co., Ltd.) 1 part by weight n-butanol 40 parts by weight Comparison with Example 1 obtained as above Regarding Example 1, the sensitivity (μJ/
Cm2) was determined and compared.
表1に示すとおり本発明による感光体の感度は保護層を
設けたにもかかわらず感度低下を起さないことが判った
。As shown in Table 1, it was found that the sensitivity of the photoreceptor according to the present invention did not decrease despite the provision of a protective layer.
表1
実施例2
実施例1における中間層形成液(リグロイン溶液)中の
固形分含有量を30%に変えた以外は実施例1と全く同
じ条件で感光体を作製した。Table 1 Example 2 A photoreceptor was produced under exactly the same conditions as in Example 1 except that the solid content in the intermediate layer forming liquid (ligroin solution) in Example 1 was changed to 30%.
この感光体と上記比較例1の感光体について画像特性を
評価した。その結果を下記表2に示す。The image characteristics of this photoreceptor and the photoreceptor of Comparative Example 1 were evaluated. The results are shown in Table 2 below.
表2
上記表2に示すように、常温常湿下では本発明品、比較
量とも解像力6本/mmと差が無かった。しかし高温高
湿下では本発明品は6本/mmと常温、常湿での画像と
良好でめったのに対し、比較量は解像力4本/mmと常
温常湿に比べ画像のにじみが顕著に表われた。Table 2 As shown in Table 2 above, under normal temperature and normal humidity, there was no difference in resolving power of 6 lines/mm for both the inventive product and the comparative product. However, under high temperature and high humidity conditions, the product of the present invention had a resolution of 6 lines/mm, which was rarely as good as the image at room temperature and humidity, whereas the comparative product had a resolution of 4 lines/mm, which caused noticeable blurring of the image compared to normal temperature and humidity. appeared.
ざらに本発明品について複写枚数30万枚の耐久試験を
行った結果、異常画像は全く認められず、初期と同様に
良好な画像特性を示した。As a result of a durability test of 300,000 copies made on the product of the present invention, no abnormal images were observed, and it showed good image characteristics as in the initial stage.
[効 果]
以上説明したように、本発明の感光体の中間層は、従来
の中間層に比較して耐環境特性に優れた中間層が得られ
、感度、耐久性、信頼性の高い感光体が得られる。[Effects] As explained above, the intermediate layer of the photoreceptor of the present invention has superior environmental resistance compared to conventional intermediate layers, and provides photosensitive material with high sensitivity, durability, and reliability. You get a body.
Claims (1)
写真用感光体。[Scope of Claims] In an electrophotographic photoreceptor in which a photosensitive layer, an intermediate layer, and a surface protective layer are sequentially laminated on a conductive support, the intermediate layer contains (a) silicon and oxygen relative to the total amount of the intermediate layer. (b) Carbon content is 10 to 30 wt%. (c) Hydrogen content is 1 to 10 wt%. (d) Nitrogen content is in the range of 1 to 10 wt%. An electrophotographic photoreceptor characterized by:
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12694187A JPS63292149A (en) | 1987-05-26 | 1987-05-26 | Electrophotographic sensitive body |
US07/274,352 US4957839A (en) | 1987-05-26 | 1988-11-21 | Electrophotographic photoconductor having a silicone resin charge retention layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12694187A JPS63292149A (en) | 1987-05-26 | 1987-05-26 | Electrophotographic sensitive body |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63292149A true JPS63292149A (en) | 1988-11-29 |
Family
ID=14947687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12694187A Pending JPS63292149A (en) | 1987-05-26 | 1987-05-26 | Electrophotographic sensitive body |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63292149A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6017665A (en) * | 1998-02-26 | 2000-01-25 | Mitsubishi Chemical America | Charge generation layers and charge transport layers and organic photoconductive imaging receptors containing the same, and method for preparing the same |
JP2015510558A (en) * | 2012-02-20 | 2015-04-09 | オートモビリ ランボルギーニ ソチエタ ペル アツイオニ | Method for producing carbon fiber fabric and fabric produced by this method |
-
1987
- 1987-05-26 JP JP12694187A patent/JPS63292149A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6017665A (en) * | 1998-02-26 | 2000-01-25 | Mitsubishi Chemical America | Charge generation layers and charge transport layers and organic photoconductive imaging receptors containing the same, and method for preparing the same |
JP2015510558A (en) * | 2012-02-20 | 2015-04-09 | オートモビリ ランボルギーニ ソチエタ ペル アツイオニ | Method for producing carbon fiber fabric and fabric produced by this method |
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