JPS63290275A - Magnetron sputtering device - Google Patents

Abstract

PURPOSE:To expand the sputtering region of the front face of a target and to improve the efficiency of utilizing the target with a magnetron sputtering device by moving annularly disposed permanent magnets successively in an axial center direction and outer direction. CONSTITUTION:The permanent magnet 1 on the rear face of the target 5 of the magnetron sputtering device is formed of the plural sctorial magnets 1-1-1-8 to the annular shape and the permanent magnets 2 and 3 which move circularly in proximity to the inner and outer peripheral faces are disposed. The two magnets 2, 3 are rotated and moved in an arrow direction in synchronization, by which the annular permanent magnet 1 consisting of the plural sectorial magnets 1-1-1-8 is periodically and smoothly moved to attach are detach to and from the central axis thereof. The magnetic field generated by the permanent magnet 1 moves correspondingly and, therefore, the plasma generating position moves at all times and the consuming surface 9 of the target 5 expands uniformly on the target surface. The efficiency of utilizing the target is thus improved.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to a magnetron sputtering apparatus.

[Conventional technology] Conventional. This type of magnetron sputtering equipment is shown in Figure 3. It consists of a permanent magnet 1° fixedly arranged in an annular shape, a cathode 4, a target 5, and a substrate holder 6 housed in a vacuum chamber 20. In addition,
7 is a wafer.

According to this, a magnetic field almost perpendicular to the electric field between the anode and the cathode is generated by an annular permanent magnet 1.

This makes it possible to perform efficient sputtering using a plasma source.

[Problems to be solved by the invention] However, the above-mentioned device... For example, if the inside of the vacuum chamber 20 is
After creating a vacuum of about 0-'Torr, argon gas is introduced to create an atmosphere of about 10''''Torr and sputtering is started.The surface of the target 5 to be sputtered is near the place where the electric field and magnetic field are perpendicular to each other. , the ablated surface of the target 5 forms a specific annular eroded region as shown at 8. This state not only lowers the efficiency of sputtering, but also causes the problem of uneven film thickness distribution due to sputtering in that specific region.

Therefore, one object of the present invention is to move the positions of a plurality of permanent magnets arranged in an annular manner sequentially in the axial direction and in the outward direction in a direction parallel to the target plane, in order to eliminate these problems. By the way.

It is an object of the present invention to provide a magnetron sputtering device that can widen the sputtered area on the target surface to increase target utilization efficiency and achieve a better film thickness distribution.

[Means for Solving the Problems] A magnetron sputtering apparatus according to the present invention is a magnetron sputtering apparatus equipped with an annular permanent magnet for generating a magnetic field orthogonal to an electric field near a cathode, in which the permanent magnets are arranged in an annular manner. The present invention is characterized in that it is formed of a plurality of sector-shaped permanent magnets, and is provided with means for controlling the movement of these sector-shaped permanent magnets sequentially in the axial direction and outward direction within a plane parallel to the target plane.

[Example] Next, an example according to the present invention will be described with reference to the drawings.

FIG. 1 is a side sectional view showing the structure of an embodiment according to the present invention. In this figure, a plurality of permanent magnets 1 arranged in a ring shape are magnetized with the same polarity in the radial direction, and the magnetic field is uniformly distributed on the inner peripheral side of the ring. The second permanent magnet 2 is provided so as to move circularly in a plane parallel to a plane including both magnetic poles of the permanent magnets 1 arranged in an annular manner and close to the annular inner circumferential side of the permanent magnet 1. It is being Also.

The third permanent magnet, like the above-mentioned first permanent magnet 2,
It is provided so as to move circularly in a plane parallel to a plane including both vi poles of the permanent magnets 1 arranged in an annular manner and close to the annular outer circumferential side of the permanent magnets 1. These first and second permanent magnets 2 and 3 are an inner circular motion guide 10a and an outer circular motion guide 10b formed on the guide 10.
Each is accommodated in a stable circular motion. The other elements have the same functions as those in FIG. 3 described above.

FIG. 2 shows a plurality of sector-shaped permanent magnets 1 and a first magnet in FIG.
and a top view showing the relationship with a second permanent magnet 2.3. This figure instantaneously shows how the second permanent magnet 2 and the third permanent magnet 3 are synchronously rotated as shown by the arrows. At the time shown in the figure, the previous three magnets (1-1 to 1-3) including the sector-shaped permanent magnet 1-4 corresponding to the permanent magnet 2 are attracted in the axial direction, and the other one corresponding to the permanent magnet 3 The front three permanent magnets (1-5 to 1-7) including the sector-shaped permanent magnet 1-8 are attracted in a direction away from the axis.

By the operation shown in FIG. 2, the magnetic field generated in the vicinity of the cathode 4 by the plurality of sector-shaped permanent magnets 1 is always periodic during sputtering.

and repeat smooth movements. As a result, the location where the plasma is generated always moves, and as a result, the wear surface of the target is made uniform over a wide range as shown by reference numeral 9.

[Effects of the Invention] As is clear from the above description, according to the present invention, by periodically and smoothly moving the magnetic field generated by a plurality of fan-shaped permanent magnets during sputtering, the wear surface of the target can be spread over a wide range. This has great effects in that it not only improves the efficiency of target use but also makes the thickness of the film formed on the wafer uniform.

[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 is an IFJ cross-sectional view showing the configuration of an embodiment according to the present invention, and FIG. FIG. 3 is a top view showing the relationship, and FIG. 3 is a side sectional view showing a configuration example of a conventional magnetron sputtering apparatus. In the figure, 1 is a sector-shaped permanent magnet, 2 is a first permanent magnet,
3 is the second permanent magnet, 4 is the cathode, 5 is the target,
6 is a substrate boulder, and 7 is a wafer. 10 is a guide. Figure 1

Claims (1)

[Claims] 1. A magnetron sputtering device equipped with an annular permanent magnet for generating a magnetic field orthogonal to an electric field near a cathode, wherein the permanent magnet is formed of a plurality of sector-shaped permanent magnets arranged in an annular manner. A magnetron sputtering apparatus characterized by comprising means for controlling the movement of these fan-shaped permanent magnets sequentially in the axial direction and outward direction within a plane parallel to the target plane. 2. In the magnetron sputtering apparatus according to claim 1, the movement control means for the plurality of sector-shaped permanent magnets is arranged on the axis side and the outer periphery, respectively, in an upper surface parallel to the arrangement surface of the sector-shaped permanent magnets. 1. A magnetron sputtering apparatus comprising second and third permanent magnets whose sides rotate at a constant period.