JPS63289875A - Solar battery - Google Patents

Solar battery

Info

Publication number
JPS63289875A
JPS63289875A JP62122600A JP12260087A JPS63289875A JP S63289875 A JPS63289875 A JP S63289875A JP 62122600 A JP62122600 A JP 62122600A JP 12260087 A JP12260087 A JP 12260087A JP S63289875 A JPS63289875 A JP S63289875A
Authority
JP
Japan
Prior art keywords
resistor
solar cell
substrate
film
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62122600A
Other languages
Japanese (ja)
Inventor
Nobuyasu Shiba
柴 信康
Koji Monno
門野 耕治
Sadaaki Kurata
倉田 定明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP62122600A priority Critical patent/JPS63289875A/en
Publication of JPS63289875A publication Critical patent/JPS63289875A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

PURPOSE:To prevent a disconnection due to a vibration or the like at a connection part by a method wherein a film of a resistor is formed on a substrate and one end of the resistor is connected collectively to one part of a lower-part electrode and an upper-part electrode. CONSTITUTION:In a solar battery where individual films of lower-part electrodes 11, 22,...2n and upper-part electrodes 51, 52,...5n are formed in succession on a substrate 1, films of resistors 41, 42 are formed on the substrate 1; because these films have been formed, one end of the resistors 41, 42 is connected to at least one of the lower-part electrodes 21, 22,...2n and the upper-part electrodes 51, 52,...5n. That is to say, because at least one film of the lower-part electrodes 21, 22,...2n and the upper-part electrodes 51, 52,...5n of the solar battery and the films of the resistors 41, 42 are connected mutually while they are formed separately on the substrate 1, no soldering operation is required to connect them. By this setup, it is possible to prevent failure and disconnection due to a vibration or the like at a connection between the resistors 41, 42 and the solar battery.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、例えば時計等に組み込んで使用する太陽電池
に関する。
DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a solar cell that is incorporated into, for example, a watch or the like.

(従来の技術) 従来、基板上に下部電極、半導体層及び上部電極の各膜
を順次形成した太陽電池か知られている。
(Prior Art) Conventionally, solar cells are known in which a lower electrode, a semiconductor layer, and an upper electrode are sequentially formed on a substrate.

該太陽電池を例えば時計等の機器に搭載した場合、該機
器の置かれた場所が暗く、十分な光が照射されないと太
陽電池の出力が低下するため、機器の機能は低下する。
For example, when the solar cell is mounted on a device such as a watch, if the place where the device is placed is dark and insufficient light is irradiated, the output of the solar cell will decrease, and the function of the device will deteriorate.

そこでこの低下を避けるために太陽電池の他に二次電池
を併設して一時的な電圧の低下を二次電池で補うように
している。
Therefore, in order to avoid this drop, a secondary battery is installed in addition to the solar battery, and the secondary battery compensates for the temporary drop in voltage.

二次電池を併設する場合、逆流防止用ダイオードと電流
制御用抵抗体と二次電池をプリント回路基板上に配設す
ると共に相互接続し、該抵抗体と太陽電池とを接続する
When a secondary battery is provided, the backflow prevention diode, current control resistor, and secondary battery are disposed on a printed circuit board and interconnected, and the resistor and the solar cell are connected.

例えば、時計用の太陽電池は、絶縁性の透光性基板上に
、透明導電性電極と、アモルファスシリコン半導体層と
背面電極の各膜を順次形成している。このアモルファス
シリコン半導体太陽電池は絶縁性透光基板を外側に向け
て時計に組み込み1、これとは別に逆流防止用ダイオー
ドと一電流制御用抵抗体素子を半田付けしたプリント回
路基板と、ニッケルカドミウムや酸化銀等の二次電池を
時計に組み込み、これらを相互に結線する。
For example, in a solar cell for a watch, a transparent conductive electrode, an amorphous silicon semiconductor layer, and a back electrode are sequentially formed on an insulating light-transmitting substrate. This amorphous silicon semiconductor solar cell is assembled into a watch with an insulating transparent substrate facing outward1.In addition to this, a printed circuit board with a backflow prevention diode and a current control resistor element soldered to it, and a nickel-cadmium A secondary battery such as silver oxide is built into the watch and these are interconnected.

逆流防止用ダイオードは太陽電池に十分な光が照射され
ずにその出力電圧が二次電池の電圧より低くなった時二
次電池から太陽電池に電流か逆流するのを防止するもの
である。また、電流制御用抵抗体素子は次の理由から太
陽電池と二次電池との接続回路に介入するものである。
The backflow prevention diode prevents current from flowing backwards from the secondary battery to the solar cell when the solar cell is not irradiated with sufficient light and its output voltage becomes lower than the voltage of the secondary battery. Further, the current control resistor element intervenes in the connection circuit between the solar cell and the secondary battery for the following reason.

太陽電池は受光する光の照度によって電流が大11】に
変動する。例えば50mm X 50mmの基板のほぼ
全面に形成した太陽電池は、室内の螢光灯(約200ル
クス)の時は約003mAの電流が、太陽光直下(約1
20.QOoルクス)の時は1QIIIAの電流がそれ
ぞれ流れ、大きな電流が流れた時は、二次電池が破損す
るから、これを防止するために、電流を抑える必要があ
る。
The current of a solar cell fluctuates by a factor of 11 depending on the illuminance of the light it receives. For example, a solar cell formed almost on the entire surface of a 50 mm x 50 mm substrate will draw a current of about 0.03 mA when indoor fluorescent lights (about 200 lux) are placed directly under the sunlight (about 1.0 mA).
20. QOo lux), a current of 1QIIIA flows, and if a large current flows, the secondary battery will be damaged, so to prevent this, it is necessary to suppress the current.

(発明が解決しようとする問題点) 前述のように電流制御用抵抗体素子をプリント回路基板
に半田付けしたものの信頼性は、半田付は部分の接続に
左右される。例えば半田付は部分の汚れ等によって半田
の濡れやひろがりか悪くなって接続が不完全になり易く
、振動等で前記接続・部分が接触不良を起したり、ある
いは断線するという問題があった。
(Problems to be Solved by the Invention) As described above, the reliability of the current control resistor element soldered to the printed circuit board depends on the connection of the parts. For example, when soldering, the solder tends to get wet or spread poorly due to dirt on the parts, resulting in incomplete connections, and vibrations can cause poor contact or breakage of the connections/parts.

本発明は、従来のこのような問題を解消することをその
目的とするものである。
The present invention aims to solve these conventional problems.

(問題点を解決するための手段) 本発明は、上記の目的を達成するために、基板上に下部
電極、半導体層及び上部電極の各膜を順次形成した太陽
電池において、前記基板上に抵抗体の膜を形成し、該膜
の形成により該抵抗体の一端と前記下部電極及び上部電
極の少なくとも一方とを一体に接続したことを特徴とす
る。
(Means for Solving the Problems) In order to achieve the above object, the present invention provides a solar cell in which a lower electrode, a semiconductor layer, and an upper electrode are sequentially formed on a substrate. The present invention is characterized in that a body film is formed, and one end of the resistor and at least one of the lower electrode and the upper electrode are integrally connected by forming the film.

(作 用) 太陽電池の下部電極及び上部電極の少なくとも一方の膜
と抵抗体の膜が、それぞれ基板に形成されることにより
互いに接続されるから、その接続に半田付けを必要とし
ない。したがって、抵抗体と太陽電池との接続が振動等
によって不良になったり断線することがない。
(Function) Since the film of at least one of the lower electrode and the upper electrode of the solar cell and the film of the resistor are connected to each other by being formed on the substrate, soldering is not required for the connection. Therefore, the connection between the resistor and the solar cell will not become defective or disconnected due to vibration or the like.

(実施例) 以下本発明の実施例を図面につき説明する。(Example) Embodiments of the present invention will be described below with reference to the drawings.

第1図及び第2図において、1は、50+nmx50+
oIIIX1.1mmの透光性ガラス基板、2 、.2
2−・・2nは該ガラス基板1上に被着形成された酸化
インジュウム錫(ITO)膜から成る下部電極、3は該
下部電極21.22・・・2 I)を覆って一体に被着
形成されたアモルファスシリコン膜、41.4□はガラ
ス基板1上に被着形成された酸化インジュウム錫(IT
O)膜から成る抵抗体、54.5□・・・5nは、アモ
ルファスシリコン膜3上に被告形成されたアルミニウム
膜から成る上部電極(背面電極)である。
In Figures 1 and 2, 1 is 50+nmx50+
oIIIX 1.1 mm transparent glass substrate, 2, . 2
2-...2n is a lower electrode made of an indium tin oxide (ITO) film deposited on the glass substrate 1, and 3 is integrally deposited to cover the lower electrodes 21,22...2I). The formed amorphous silicon film, 41.4 □, is indium tin oxide (IT) deposited on the glass substrate 1.
O) The resistors 54.5□...5n made of films are upper electrodes (back electrodes) made of aluminum films formed on the amorphous silicon film 3.

前記下部電極2.の接続部2.aと抵抗体4、の一端、
上部電極5.の接続部5.aと下部電極22の接続部2
□a1上部電極5□の接続部52aと下部電極23 (
図示せず)の接続部23aが互いに接続され、以下同様
で、最後に上部電極5n−+(図示せず)の接続部51
1−18と下部電極2nの接続部2naとが互いに接続
されて、n個の発電単位かすべて直列に接続され、上部
電極5nの接続部5naは抵抗体42の一端に接続され
ている。
The lower electrode 2. Connection part 2. a and one end of the resistor 4,
Upper electrode5. Connection part 5. Connection part 2 between a and the lower electrode 22
□A1 upper electrode 5□ connection part 52a and lower electrode 23 (
The connecting portions 23a of the upper electrodes 5n-+ (not shown) are connected to each other, and the same applies to the connecting portions 23a of the upper electrodes 5n-+ (not shown).
1-18 and the connecting portion 2na of the lower electrode 2n are connected to each other, all n power generation units are connected in series, and the connecting portion 5na of the upper electrode 5n is connected to one end of the resistor 42.

この太陽電池は次のようにして作成した。This solar cell was created as follows.

ガラス基板1の主面に形成した酸化インジウム錫(IT
O)膜にロジン系樹脂を主成分とする耐酸性レジストを
スクリーン印刷によって下部電極2..22・・・2n
のパターンと抵抗体4..42のパターンを印刷し硬化
させ、その後塩酸を主成分とするエツチング液中に浸漬
して該レジストで覆われていない前記ITO膜をエツチ
ング除去した。その後、該レジストを市販の剥離液によ
って剥離除去し、ガラス基板1上に下部電極2、.22
・・・2nと抵抗体4..42を形成した。
Indium tin oxide (IT) formed on the main surface of the glass substrate 1
O) Lower electrode 2. is formed by screen printing an acid-resistant resist mainly composed of rosin resin on the film. .. 22...2n
pattern and resistor 4. .. 42 patterns were printed and cured, and then the ITO film not covered with the resist was etched away by immersing it in an etching solution containing hydrochloric acid as a main component. Thereafter, the resist is peeled off using a commercially available stripping solution, and the lower electrodes 2, . 22
...2n and resistor 4. .. 42 was formed.

抵抗体4..42は、それぞれ幅0.5mmで長さ20
mmの大きさで点P、Q間の抵抗は4にΩの値を有し、
抵抗体4.は下部電極21と連なり、抵抗体゛42は独
立して形成される。次いで、抵抗体4、.42と下部電
極21.22・・・2nの接続部2、a、2□a・・・
2naを含む域を除いた下部電極2..22・・・2n
上をアモルファスシリコン膜3で連続して覆った。
Resistor 4. .. 42 each has a width of 0.5 mm and a length of 20
The resistance between points P and Q with a size of mm has a value of 4 to Ω,
Resistor 4. is connected to the lower electrode 21, and the resistor 42 is formed independently. Next, resistors 4, . 42 and the lower electrodes 21.22...2n connection parts 2, a, 2□a...
Lower electrode 2 excluding the region containing 2na. .. 22...2n
The top was continuously covered with an amorphous silicon film 3.

アモルファスシリコン膜3は、プラズマCVD法によっ
てP層のアモルファスシリコンを100人の厚さに、i
層のアモルファスシリコンを5000人の厚さにn層の
アモルファスシリコンを300人の厚さに順次形成した
。次いでアモルファスシリコン膜3上の下部電極2..
22・・・21)に対向する位置にアルミニウムを蒸若
して上部電極5..52・・・5nを形成した。
The amorphous silicon film 3 is made by depositing a P layer of amorphous silicon to a thickness of 100 nm using the plasma CVD method.
A layer of amorphous silicon was formed to a thickness of 5,000 layers, and an n-layer amorphous silicon was formed to a thickness of 300 layers. Next, a lower electrode 2. is formed on the amorphous silicon film 3. ..
22...21) by vaporizing aluminum at a position opposite to the upper electrode 5. .. 52...5n was formed.

該太陽電池6は、回路基板上に搭載された逆流防止用ダ
イオード7とカーボン・リチウム二次電池8(松下電池
工業CL 2020 、電流容量C−1mAh)とに別
に用意した回路基板上において第3図示のように接続し
た。第3図において、9は測定のために接続した電流計
を示す。
The solar cell 6 is mounted on a third circuit board separately prepared from a backflow prevention diode 7 mounted on the circuit board and a carbon-lithium secondary battery 8 (Matsushita Battery Industries CL 2020, current capacity C-1mAh). Connect as shown. In FIG. 3, numeral 9 indicates an ammeter connected for measurement.

該太陽電池6にソーラシミュレータ(ウシオ電機製)光
源により照度10万ルクスの光を照射したとき、0.3
mAの電流が流れた。
When the solar cell 6 is irradiated with light at an illuminance of 100,000 lux from a solar simulator (manufactured by Ushio Inc.) light source, 0.3
A current of mA flowed.

次に該太陽電池6に、振幅が1.5mmで振動周波数を
10Hzから2000Hzまで変え、再びlOH2まで
戻すのを1サイクル(20分以内)とする振動試験をx
、y、z方向について各2時間づつ行ない、その後出力
電流を測定した結果、変動はなかった。
Next, the solar cell 6 was subjected to a vibration test in which the amplitude was 1.5 mm, the vibration frequency was changed from 10 Hz to 2000 Hz, and one cycle (within 20 minutes) was to return to lOH2.
, y, and z directions for 2 hours each, and then measured the output current. As a result, there was no fluctuation.

比較例 抵抗体を円筒磁器にカーボン皮膜を形成し、絶縁性被膜
を施したリード付抵抗体を用い、これを太陽電池と直列
に接続した以外は、上記実施例と同じ方法、同じ条件で
振動試験を行なった結果、太陽電池と抵抗体の接続の断
線は1’8ppI11であった。
Comparative example A leaded resistor made of cylindrical porcelain with a carbon film formed and an insulating film was used, and the resistor was vibrated in the same manner and under the same conditions as the above example, except that it was connected in series with the solar cell. As a result of the test, the disconnection of the connection between the solar cell and the resistor was 1'8 ppI11.

前記実施例では、抵抗体を下部電極と同じITO膜によ
って下部電極と同時に作成したが、抵抗体を、例えばN
i−Cr等でその一端か下部電極の接続部と重なるよう
に成膜して作成してもよい。
In the above example, the resistor was made using the same ITO film as the lower electrode at the same time as the lower electrode.
It may be formed by forming a film of i-Cr or the like so that one end thereof overlaps with the connecting portion of the lower electrode.

(発明の効果) 以上説明したように、本発明によれば、抵抗体と太陽電
池の電極との接続が半田付けによらないので、その接続
部が振動等で断線することがなくなり信顆性が向上する
効果を有する。
(Effects of the Invention) As explained above, according to the present invention, since the connection between the resistor and the electrode of the solar cell does not involve soldering, the connection part will not be disconnected due to vibration etc., thereby improving reliability. It has the effect of improving.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の一実施例の平面図、第2図は第1図
の■−■線截断図、第3図はその接続試験回路である。 1・・・透光性ガラス基板 21.22・・・2n・・・下部電極 3・・・アモルファスシリコン膜 41.42・・・抵抗体 5、.52 ・・5n・・上部電極 外 26 第1図 第3図
FIG. 1 is a plan view of an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along the line ■--■ in FIG. 1, and FIG. 3 is a connection test circuit thereof. 1... Transparent glass substrate 21.22...2n... Lower electrode 3... Amorphous silicon film 41.42... Resistor 5, . 52...5n...Outside the upper electrode 26 Fig. 1 Fig. 3

Claims (1)

【特許請求の範囲】[Claims] 基板上に下部電極、半導体層及び上部電極の各膜を順次
形成した太陽電池において、前記基板上に抵抗体の膜を
形成し、該膜の形成により該抵抗体の一端と前記下部電
極及び上部電極の少なくとも一方とを一体に接続したこ
とを特徴とする太陽電池。
In a solar cell in which films of a lower electrode, a semiconductor layer, and an upper electrode are sequentially formed on a substrate, a film of a resistor is formed on the substrate, and by forming the film, one end of the resistor, the lower electrode, and the upper electrode are formed. A solar cell characterized in that at least one of the electrodes is integrally connected.
JP62122600A 1987-05-21 1987-05-21 Solar battery Pending JPS63289875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62122600A JPS63289875A (en) 1987-05-21 1987-05-21 Solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62122600A JPS63289875A (en) 1987-05-21 1987-05-21 Solar battery

Publications (1)

Publication Number Publication Date
JPS63289875A true JPS63289875A (en) 1988-11-28

Family

ID=14839944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62122600A Pending JPS63289875A (en) 1987-05-21 1987-05-21 Solar battery

Country Status (1)

Country Link
JP (1) JPS63289875A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009238487A (en) * 2008-03-26 2009-10-15 Tdk Corp Electrochemical device
JP2009238493A (en) * 2008-03-26 2009-10-15 Tdk Corp Electrochemical device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009238487A (en) * 2008-03-26 2009-10-15 Tdk Corp Electrochemical device
JP2009238493A (en) * 2008-03-26 2009-10-15 Tdk Corp Electrochemical device

Similar Documents

Publication Publication Date Title
US5248345A (en) Integrated photovoltaic device
JPS60240171A (en) Solar electric generator
US4774193A (en) Method for avoiding shorts in the manufacture of layered electrical components
JP2001516513A (en) Static eliminator for solar cell
US4934045A (en) Method of producing electric circuit patterns
JPS61259229A (en) Non-linear type control element for planar type photoelectric display unit and manufacture thereof
JPS63289875A (en) Solar battery
JPS6173386A (en) Manufacture of photovoltaic device
EP0478839A1 (en) Photovoltaic device and process for manufacturing the same
JPH07287081A (en) Connection structure for solar cell
JPS6230507B2 (en)
WO2020250262A1 (en) Optimised solar cell, solar cell module and method of manufacturing thereof
JP3932061B2 (en) EL light emitting device and manufacturing method thereof
JP2761730B2 (en) Photoelectric conversion device
JP2706942B2 (en) Light sensor
US4570030A (en) Solar cell device
CN111014083B (en) Diode aging screening instrument
JPS5976480A (en) Amorphous silicon solar battery
JPS5853031Y2 (en) display panel
JPS629748Y2 (en)
JPS6244548Y2 (en)
JP2000124587A (en) Fitting method and fitting structure of electronic circuit unit to printed board
JPS61134081A (en) Photovoltaic device
JP3527086B2 (en) EL module
JPH06191182A (en) Ic card device