JPS61134081A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPS61134081A JPS61134081A JP59256710A JP25671084A JPS61134081A JP S61134081 A JPS61134081 A JP S61134081A JP 59256710 A JP59256710 A JP 59256710A JP 25671084 A JP25671084 A JP 25671084A JP S61134081 A JPS61134081 A JP S61134081A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- power generation
- electrodes
- extension
- photovoltaic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010248 power generation Methods 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 abstract description 18
- 239000010409 thin film Substances 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001887 tin oxide Inorganic materials 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 244000201986 Cassia tora Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- NCAIGTHBQTXTLR-UHFFFAOYSA-N phentermine hydrochloride Chemical compound [Cl-].CC(C)([NH3+])CC1=CC=CC=C1 NCAIGTHBQTXTLR-UHFFFAOYSA-N 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は金属板とその上に形成した絶縁膜とから成る基
板上に設けられた非晶質半導体光起電力装置に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an amorphous semiconductor photovoltaic device provided on a substrate consisting of a metal plate and an insulating film formed thereon.
従来の技術
従来この種の光起電力装置は、第３図に示すような構造
であった。第３図人は斜視図、Ｂは平面図である。第３
図人、Ｂにおいて３０は金属基板。2. Description of the Related Art Conventionally, this type of photovoltaic device had a structure as shown in FIG. Figure 3 is a perspective view, and Figure B is a plan view. Third
In figure B, 30 is a metal substrate.
３１は絶縁薄膜、３２は第１電極、３３は非晶質半導体
、３４は第２電極、３５は第１１ｉ極３２の延長部で一
方の発電出力供給用端子、３６は第２電極３４の延長部
で他方の発電出力供給端子、３７は電気的に直列接続す
る第１．第２電極の接合部である。この点に関しては特
開昭６６−１０７２７６号及び特開昭５８−１１５８７
２号に詳細に記載されている。31 is an insulating thin film, 32 is a first electrode, 33 is an amorphous semiconductor, 34 is a second electrode, 35 is an extension of the 11i-pole 32 and is one terminal for power generation output supply, 36 is an extension of the second electrode 34 and the other power generation output supply terminal 37 is the first terminal electrically connected in series. This is the joint portion of the second electrode. Regarding this point, JP-A-66-107276 and JP-A-58-11587
It is described in detail in issue 2.
発明が解決しようとする問題点
このような従来の構成では、発電出力供給端子が光起電
力装置の両端に位置しており、リード線の取付は作業上
の困難さに加えて１発電出力供給端子から、負荷に電力
を供給するために図示していないが２本のリード線を使
って、供給端子部と負荷全接続する必要があった。電卓
やウォッチ等の電子機器の電源用として光起電力装置を
使用し、この光起電力装置と電子機器の負荷との接続を
仮りにハンダ付けで実施すると、・・ンダ付は箇所が合
計４箇所になり、接続箇所の削減又は、ハンダ付は箇所
を互いに近接し次位置に設けることはプロセス上不可欠
な課題であった。本発明はこのような問題点を解決する
もので、供給端子部と電子機器の負荷を接続する箇所を
削減するか、又は供給端子部を近接した位置に設けるこ
とを目的とするものである。Problems to be Solved by the Invention In such a conventional configuration, the power generation output supply terminals are located at both ends of the photovoltaic device, and attaching the lead wires is not only difficult to work with, but also requires a single power generation output supply terminal. In order to supply power from the terminal to the load, it was necessary to connect all the supply terminals and the load using two lead wires (not shown). If a photovoltaic device is used as a power source for electronic devices such as calculators and watches, and the connection between this photovoltaic device and the load of the electronic device is performed by soldering, there will be a total of 4 soldering points. Reducing the number of connection points or placing the soldering points close to each other has been an indispensable issue in the process. The present invention is intended to solve these problems, and aims to reduce the number of locations where the supply terminal section and the load of the electronic device are connected, or to provide the supply terminal section at a close position.
問題点を解決するための手段
この問題点を解決するために本発明は、金属基板と第１
電極の発電出力端子全接続するごとで、金属基板自身を
片方の電極にすることにより、発電出力供給端子部と電
子機器の負荷の接続箇所の削減と、発電出力端子の近接
配置と金図ったものである。Means for Solving the Problem In order to solve this problem, the present invention provides a metal substrate and a first
By using the metal substrate itself as one of the electrodes when all the power generation output terminals of the electrodes are connected, it is possible to reduce the number of connection points between the power generation output supply terminal section and the load of electronic equipment, and to place the power generation output terminals close together. It is something.
作用
本発明の構成により電気的に直列接続を行ない、かつ第
２電極３４のうちの少なくとも一つ全発電出力供給用の
一方の端子として、この端子と電子機器の負荷ｉ １Ｊ
−ド線を使って接続する。そして第１電極３２の発電出
力端子を形成する時に金属基板と直接接続して、この金
属基８ｉヲ発電出力供給用の他方の端子を兼ねさせるこ
とにより、従来この第１電極の発電出力供給端子と電子
機器の負荷をリード線を使って接続していた工程の削減
が可能であり、かつ発電出力端子の近接配置も可能にな
る。Operation According to the configuration of the present invention, electrical series connection is performed, and at least one of the second electrodes 34 serves as one terminal for supplying the entire power generation output, and this terminal and the load i 1J of the electronic device are connected.
– Connect using a cable. When the power generation output terminal of the first electrode 32 is formed, it is directly connected to the metal substrate and this metal base 8i also serves as the other terminal for power generation output supply. This makes it possible to eliminate the process of connecting electronic equipment loads using lead wires, and also allows the power generation output terminals to be placed close together.
実施例
第１図は本発明の光起電力装置の一実施例を示す斜視図
である。第１図において１０は金属基板。Embodiment FIG. 1 is a perspective view showing an embodiment of the photovoltaic device of the present invention. In FIG. 1, 10 is a metal substrate.
１１はＳｉｎ□、 ＣｅＯ、Ａｌ２Ｏ５などの無機絶縁
薄膜や、ポリイミド、ポリエステルなどの有機樹脂から
なる絶縁薄膜、１２は第１電極であって、Ｏｒ。11 is an insulating thin film made of an inorganic insulating film such as Sin□, CeO, Al2O5, or an organic resin such as polyimide or polyester; 12 is a first electrode;
Ｔｉ 、 Ｔａ 、 ＡＩ ステンレス鋼などの金属薄
膜から構成されている。１３はアモルファスＳｉ、アモ
ルファス５ｉ−Ｇｅなどの非晶質半導体、１４は第２電
極であって、これは酸化インジウム、酸化錫などの光透
過性導電薄膜であり、発電領域は１２゜１３．１４の３
層が互いに重なる区域である。第１１極１２、第２電極
１４の延長部１５．１６は１７の接続部で１気的に直列
接続を行なう為に重ねる。１６は第２電極のうちの少な
くとも一つの延長部であって、一方の極性の発電出力供
給端子である。１６は第１電極１２のうちの少なくとも
一つの延長部であって、他方の極性の発電出力供給端子
である。１５６は第１電極１２の延長部１６と金属基板
１０を接続する箇所である。この箇所は金属基板上に絶
縁薄膜１１全形成する時に、この箇所を部分的にマスク
することによって非絶縁状態となることから第１電極１
２の延長部１５と金属基板１０の接続箇所１６５と全電
気的に当接することが可能である。It is composed of a thin metal film such as Ti, Ta, AI stainless steel, etc. 13 is an amorphous semiconductor such as amorphous Si or amorphous 5i-Ge, 14 is a second electrode, which is a light-transmitting conductive thin film such as indium oxide or tin oxide, and the power generation area is 12° 13.14 No. 3
This is the area where the layers overlap each other. The extensions 15 and 16 of the eleventh pole 12 and the second electrode 14 are overlapped to form a series connection at the connection point 17. 16 is an extension of at least one of the second electrodes, and is a power generation output supply terminal of one polarity. 16 is an extension of at least one of the first electrodes 12, and is a power generation output supply terminal of the other polarity. Reference numeral 156 indicates a portion where the extension portion 16 of the first electrode 12 and the metal substrate 10 are connected. This location becomes a non-insulating state by partially masking this location when the insulating thin film 11 is entirely formed on the metal substrate, so the first electrode 1
It is possible for the extension portion 15 of No. 2 and the connection portion 165 of the metal substrate 10 to come into full electrical contact.
第２図は本発明の光起電力装置の別の実施例全示す図で
ある。第１図に示す実施例に比較して第２図の異なる点
は、第２電極２４のうちの−っであるその延長部の一方
の発電出力供給用端子２ｅに近接した位置に、他方の第
１を極２２の発１出力供給用端子２６と同電位になる端
子部２６６を設けた点にある。端子部２５６は、２６，
２５５と同電位であることは明らかである。これらの構
成により、光起電力装置の供給端子部と電子機器の負荷
を接続する箇所の削減や供給端子部を互いに近接した位
置に設けることが可能になる。そしてさらに第１電極２
２と第２電極２４の延長部でそれぞれが重なる接続箇所
を発電出力端子にすることで、出力電圧の大きさの異な
る電圧を同一の光起電力装置から供給することが可能に
なる。FIG. 2 is a diagram showing another embodiment of the photovoltaic device of the present invention. The difference in FIG. 2 from the embodiment shown in FIG. The first point is that a terminal portion 266 is provided which has the same potential as the terminal 26 for supplying one output of the pole 22. The terminal portion 256 includes 26,
It is clear that the potential is the same as that of 255. These configurations make it possible to reduce the number of locations where the supply terminal section of the photovoltaic device and the load of the electronic device are connected, and to provide the supply terminal sections at positions close to each other. Furthermore, the first electrode 2
By using the connection points where the second electrode 2 and the second electrode 24 overlap with each other as power generation output terminals, it becomes possible to supply voltages with different output voltages from the same photovoltaic device.
なお金属基板は、例えば板厚が０．１〜０．５酬のステ
ンレス鋼基板上に、ロールコータ法でポリイミド樹脂を
塗膜する。次に真空蒸着法によって第１電極であるｃｒ
金金属約数巨人の厚さに形成する。ツイテプラズマＣｖ
Ｄ法で、５ｉＨａ 、 ＰＨ，５１Ｂ２Ｈ６などの原料
ガスから成る混合ガスを分解堆積して、ｐ型、ｉ型９ｎ
型非晶質シリコンを順次層状にそれぞれ、約３００人、
約５０００人、約２００人の厚さに形成する。次に真空
蒸着法によって第２電極である酸化インジウムや酸化錫
を約７００人の厚さに形成する。これらの厚さは光起電
力装置として機能する大兄の厚さであって必らずしもこ
の厚さに限定したものではない。またそれぞれの電極や
非晶質半導体や樹脂を形成する時にメタルマスクやスク
リーン印刷で所定の形状に形成できることは現在の技術
水準では至極当然のことである。又本実施例においては
第１電極と金属基板を電気的に接続する場合について記
述したが、第２電極と金属基板を接続する場合も同様で
ある。Note that the metal substrate is obtained by coating a polyimide resin film using a roll coater method on a stainless steel substrate having a thickness of 0.1 to 0.5 mm, for example. Next, the first electrode is made of cr by vacuum evaporation method.
Gold metal forms to a thickness of about a giant. Tweite Plasma Cv
By method D, a mixed gas consisting of raw material gases such as 5iHa, PH, 51B2H6 is decomposed and deposited to form p-type and i-type 9n.
Approximately 300 people each, sequentially layered with mold amorphous silicon,
It will be formed to a thickness of about 5,000 people and about 200 people. Next, indium oxide or tin oxide, which is a second electrode, is formed to a thickness of about 700 nm using a vacuum evaporation method. These thicknesses are the maximum thicknesses that can function as a photovoltaic device, and are not necessarily limited to these thicknesses. Furthermore, it is a matter of course at the current state of the art that each electrode, amorphous semiconductor, and resin can be formed into a predetermined shape using a metal mask or screen printing. Further, in this embodiment, the case where the first electrode and the metal substrate are electrically connected has been described, but the same applies to the case where the second electrode and the metal substrate are connected.
第４図は光電１力装置の等価回路と電子機器の負荷を表
わす図である。外部から光が装置に照射されて、光電流
Ｉｐが発生する。Ｄは装置のダイオードを示し、Ｒｓ
、 Ｒｇｈ は装置の直列抵抗とシャント抵抗をそれ
ぞれ表わす。Ｒｊ 、 Ｒ２は装置の発電出力供給端子
を表わし、Ｒ２は第１図において第２電極１４側の端子
１６、Ｒ１は第１電極１２側の１５又は１５６の端子又
は金属基板１０を表わす。Ｋ、、Ｒ２は発電出力被供給
側である電子機器側（負荷）の端子を表わす。Ｒ２とＲ
２はリード線でハンダ付けするＯとで接続全行なう。又
ＩＣ＋は通常機器側の本体電位と等価になるように設計
されている為に、光起電力装置を本体に設置（組立）す
る時に、自動的にＲ１と接続される。FIG. 4 is a diagram showing an equivalent circuit of a photoelectric device and a load of electronic equipment. When light is applied to the device from the outside, a photocurrent Ip is generated. D indicates the diode of the device, Rs
, Rgh represent the series resistance and shunt resistance of the device, respectively. Rj and R2 represent power generation output supply terminals of the device, R2 represents the terminal 16 on the second electrode 14 side in FIG. 1, and R1 represents the terminal 15 or 156 on the first electrode 12 side or the metal substrate 10. K, , R2 represent terminals on the electronic device side (load) which is the side to which the generated output is supplied. R2 and R
2 is all connected by soldering O with a lead wire. Moreover, since IC+ is normally designed to be equivalent to the main body potential of the device, it is automatically connected to R1 when the photovoltaic device is installed (assembled) in the main body.
又Ｒ１が第１を極と共通な第２図の２５６の時にはＲｊ
、 Ｒ２が近接した位置にあるためにリード付けの作
業が容易になる。Also, when R1 is 256 in Figure 2 where the first pole is common to Rj
, R2 are located close together, making the work of attaching leads easier.
発明の効果
以上述べてきたように、本発明によれば光電電力装置の
発電出力供給端子と１子機器の負荷端子との接続箇所の
削減と接続作業の工程の簡略化が図れること、及び基板
に帯電する静電気による静電破壊をも防止ができ、実用
上きわめて有効である。Effects of the Invention As described above, according to the present invention, it is possible to reduce the number of connection points between the power generation output supply terminal of a photoelectric power device and the load terminal of a single child device, to simplify the process of connection work, and to simplify the process of connection work. It is also possible to prevent electrostatic damage caused by static electricity, which is extremely effective in practice.
第１図及び第２図は本発明の実施例における光起電力装
置を示す構造斜視図、第３図は従来の光起電力装置を示
す構造斜視図、第４図は光起電力装置の等価回路と電子
機器の負荷を示す回路図である。
１０・・・・・金属基板、１１・・・・・・絶縁薄膜、
１２・・・・・・第１電極、１３・・・・・・非晶質半
導体、１４・・・・・・第２電極、１５・・・・・・第
１雷極１２の延長部（発電出力供給端子）、１６・・・
・・・第２電極１４Ω延長部（発電出力供給端子）。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名１０
・・−会議基数
１２・・・ ＄／？袖
１３・・ Ｊト晶ｊｔ 半ｊ（イ参
／４ ￥２覚砧
１５・・・＃ｌ覚緬め延１部
２θ９．・電属基板
２１・・・９１幻帽咲
Ｚ４・ ＃２虎揚
２５・・答イ（ネｊｎ延長告ド
２６− ’４２４ｒＡ４ｔｎ 簸表部
１６１・ ・ ′）り１４ｔＡ艷シ【扁１１ヒイ知〕櫨
ｉ多部第３図1 and 2 are structural perspective views showing a photovoltaic device according to an embodiment of the present invention, FIG. 3 is a structural perspective view showing a conventional photovoltaic device, and FIG. 4 is an equivalent structure of the photovoltaic device. FIG. 2 is a circuit diagram showing a circuit and a load of an electronic device. 10... Metal substrate, 11... Insulating thin film,
12...First electrode, 13...Amorphous semiconductor, 14...Second electrode, 15...Extension portion of first thunder pole 12 ( power generation output supply terminal), 16...
...Second electrode 14Ω extension part (power generation output supply terminal). Name of agent: Patent attorney Toshio Nakao and 1 other person10
...-Conference cardinality 12... $/? Sleeve 13...J Tosho jt Half j (Isan/4 ¥2 Kakukin 15...#l Kakumeen 1 part 2θ9.・Electric board 21...91 Genkasaki Z4・ #2 Tora 25...Answer 26-'424rA4tn 161...') 14tA 艷shi [B 11 Hii knowledge] 櫨i many parts Figure 3
Claims (3)
を発生する非晶質半導体層と、上記非晶質半導体層を挾
み上記電子及び／又は正孔を集める第１及び第２電極と
から成る膜状の複数の発電領域を有し、上記複数の発電
領域は１枚の金属板上に形成した絶縁膜上に形成されて
いて、各発電領域における光起電力が直列関係となるよ
う隣接する発電領域の第１、第２電極は発電領域の外側
で互いに電気的に接続されており、かつそれら複数の電
極のうち、少なくとも一つが前記金属板と接続されてい
る光起電力装置。(1) An amorphous semiconductor layer that generates electrons and/or holes that contribute to power generation through light irradiation, and first and second electrodes that sandwich the amorphous semiconductor layer and collect the electrons and/or holes. The plurality of power generation regions are formed on an insulating film formed on one metal plate, and the photovoltaic force in each power generation region is in a series relationship. The first and second electrodes of adjacent power generation regions are electrically connected to each other outside the power generation region, and at least one of the plurality of electrodes is connected to the metal plate. .
、かつ外部に発電出力を供給する出力端子部を兼ねた第
１、第２電極の位置が隣接している特許請求の範囲第１
項記載の光起電力装置。(2) The first and second electrodes, which are electrically connected to each other outside the amorphous semiconductor layer and also serve as output terminals for supplying power generation output to the outside, are adjacent to each other. 1
The photovoltaic device described in Section 1.
し、複数のうちの一つの第１電極を一方の発電出力端子
に、複数のうちのいくつかの第２電極を他方の発電出力
端子とした特許請求の範囲第１項又は第２項記載の光起
電力装置。(3) A plurality of first and second electrodes are electrically connected in series, one of the first electrodes is connected to one power generation output terminal, and some of the second electrodes are connected to the other. A photovoltaic device according to claim 1 or 2, wherein the photovoltaic device has a power generation output terminal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59256710A JPS61134081A (en) | 1984-12-05 | 1984-12-05 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59256710A JPS61134081A (en) | 1984-12-05 | 1984-12-05 | Photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61134081A true JPS61134081A (en) | 1986-06-21 |
Family
ID=17296387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59256710A Pending JPS61134081A (en) | 1984-12-05 | 1984-12-05 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61134081A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0225079A (en) * | 1988-07-13 | 1990-01-26 | Taiyo Yuden Co Ltd | Amorphous semiconductor solar cell |
| US5405562A (en) * | 1988-02-10 | 1995-04-11 | Ngk Spark Plug Co., Ltd. | Process of making a coated substrate having closed porosity |
| WO2011039991A1 (en) * | 2009-09-30 | 2011-04-07 | Fujifilm Corporation | Solar cell module |
-
1984
- 1984-12-05 JP JP59256710A patent/JPS61134081A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5405562A (en) * | 1988-02-10 | 1995-04-11 | Ngk Spark Plug Co., Ltd. | Process of making a coated substrate having closed porosity |
| US5635301A (en) * | 1988-02-10 | 1997-06-03 | Ngk Spark Plug Co., Ltd. | Multilayered glass substrate |
| JPH0225079A (en) * | 1988-07-13 | 1990-01-26 | Taiyo Yuden Co Ltd | Amorphous semiconductor solar cell |
| WO2011039991A1 (en) * | 2009-09-30 | 2011-04-07 | Fujifilm Corporation | Solar cell module |
| JP2011077252A (en) * | 2009-09-30 | 2011-04-14 | Fujifilm Corp | Solar cell module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5248345A (en) | Integrated photovoltaic device | |
| JPS60240171A (en) | Solar electric generator | |
| JP2006228876A (en) | Solar cell and manufacturing method thereof | |
| JP3449155B2 (en) | Photoelectric conversion device and method of manufacturing the same | |
| JPH09326497A (en) | Solar battery module and its manufacturing method | |
| US20020153037A1 (en) | Electric power generating film and method of fabrication | |
| JPS61134081A (en) | Photovoltaic device | |
| JPH0319379A (en) | Solar cell | |
| JPH07297436A (en) | Thin film solar battery sub-module and thin film solar battery module | |
| JPS622713B2 (en) | ||
| JPS6173386A (en) | Manufacture of photovoltaic device | |
| JP3696757B2 (en) | Solar cell connection method, connecting metal fitting, and solar cell module | |
| JPS61199672A (en) | Photovoltaic device | |
| JPS6428844A (en) | Superconducting wiring | |
| JP2706942B2 (en) | Light sensor | |
| US4570030A (en) | Solar cell device | |
| JP3332487B2 (en) | Method for manufacturing photovoltaic device | |
| JP2620884B2 (en) | Amorphous semiconductor photovoltaic device | |
| JPH0610702Y2 (en) | Photovoltaic device | |
| JPH0319378A (en) | Manufacture of solar cell | |
| JPS629748Y2 (en) | ||
| JP2726045B2 (en) | Light power generator | |
| JPS59167072A (en) | Series-connected type thin film solar battery | |
| JPH0732259B2 (en) | Photovoltaic device manufacturing method | |
| JPH03132080A (en) | Photovoltaic device |