JPS6328863A - Vacuum treatment device - Google Patents

Vacuum treatment device

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Publication number
JPS6328863A
JPS6328863A JP17084286A JP17084286A JPS6328863A JP S6328863 A JPS6328863 A JP S6328863A JP 17084286 A JP17084286 A JP 17084286A JP 17084286 A JP17084286 A JP 17084286A JP S6328863 A JPS6328863 A JP S6328863A
Authority
JP
Japan
Prior art keywords
substrate
vacuum
chamber
conveying means
sluice valve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17084286A
Other languages
Japanese (ja)
Inventor
Toshiaki Fujioka
藤岡 俊昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP17084286A priority Critical patent/JPS6328863A/en
Publication of JPS6328863A publication Critical patent/JPS6328863A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To eliminate atmospheric pollution and particle contamination and to improve the efficiency of an operation by communicating respective consecutive vacuum treatment chambers via sluice valves to a vacuum conveying chamber and moving substrates successively by using auxiliary conveying means. CONSTITUTION:The substrate A is introduced into the forward prevacuum chamber 8. The inside of the chamber 8 is evacuated and the sluice valve 5 on the lower side thereof is opened. The auxiliary conveying means 7 is moved upward to take the substrate A out thereof into the lower conveying chamber 2 thereof, then the sluice valve 5 is closed. The substrate A is transferred from a substrate receiver 7c on the conveying means 7 side to a substrate receiver 1c on the conveying means 1 side standing by in the upper space thereof. The substrate A is successively guided to right under the succeeding vacuum treatment chambers 4 by the actuation of the conveying means 1. The sluice valve 5 is then opened and the auxiliary conveying means 7 on the lower side thereof is moved upward to introduce the substrate A into the treatment chamber 4. The sluice valve 5 is then closed and the substrate is subjected to the prescribed vacuum treatment. The substrate A is thereafter introduced into the succeeding backward treatment chambers in the same manner and is subjected to respective vacuum treatments.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、シリコンウェハその他の基体に、スパッタリ
ング、ドライエツチング、真空蒸着その他の真空処理を
、類6次の複数段に施すようにした連続式の真空処理装
置に関する。
Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a method for continuously applying vacuum processing such as sputtering, dry etching, vacuum evaporation, etc. to silicon wafers and other substrates in multiple stages according to Class 6. The present invention relates to vacuum processing equipment of the type.

(従来の技術) 従来この種装置として、基体を複数個の真空処理v内に
順次に導かせて、これに各処理室内各真空処理を順次に
施すようにした式のものは知られる。
(Prior Art) Conventionally, as this type of apparatus, one is known in which a substrate is sequentially introduced into a plurality of vacuum processing chambers v, and each vacuum processing is sequentially performed on the substrate in each processing chamber.

(発明が解決しようとする問題点) 然し乍ら、この場合、その構成は、一般に例えば第1図
示の通りであり、即ち基体Aの搬送路a上に、真空処理
vbを前後の複数個に配設すると共に各隣接する2個の
処理ybをその中間の各仕切弁Cで互に連通づる式を一
般とするもので、か)るものでは、該基体Aを前段の処
理室す内で処理した後、これをその後段の処理!b内に
導かせて次の処理を施す場合、その中間の仕切弁Cを一
旦間放するを及し、これによれば、画処理ibbは互に
直接的に連通された状態となって相互に雰囲気汚染を生
じ勝ちであり、これを阻止するには、該弁Cの開弁に先
立ち各室す内を一旦高真空に排気するを要して作業が非
能率となるを免れず、更に基体Aを該搬送路aに沿って
搬送する搬送手段は、両ibb間を移動するを要し、こ
れは画室bb間に粒子汚染を生じ勝ちである等の不都合
を伴う。図中Oは両端の処理ybbに各仕切弁Cを介し
て連なる各予備真空室を示す。
(Problem to be Solved by the Invention) However, in this case, the configuration is generally as shown in FIG. At the same time, two adjacent processing yb are generally communicated with each other through gate valves C in between. After that, process this in the subsequent stage! When conducting the next process by guiding the image into the image processing area ibb, the intermediate gate valve C is temporarily released. In order to prevent this, it is necessary to evacuate each chamber to a high vacuum before opening the valve C, which makes the work inefficient. The transport means for transporting the substrate A along the transport path a must move between both ibbs, which is accompanied by disadvantages such as the possibility of particle contamination between compartments bb. In the figure, O indicates each preliminary vacuum chamber connected to the processing ybb at both ends via each gate valve C.

(問題点を解決するための手段) 本発明はか)る不都合のない装置を得ることをその目的
としたもので、基体を、複数個の真空処理室内に順次に
導かせて、これに各処理亨内で、各真空処理を施すよう
にしたものにおいて、該基体を前後方向の搬送路に沿っ
て導く搬送手段を収容する真空搬送室を設けると共に、
その側方に該複数個の真空処理室を順次に配置して、こ
れらを互いに並列に各仕切弁を介して該真空搬送室内に
連通させ、更に該搬送路に各仕切弁を介して各真空処理
室内にのびる各分岐路を形成させると共に、該真空搬送
室内に該基体を各分岐路に沿って各真空処理室内に導入
導出自在の各補助搬送手段を備え、該基体を各分岐路に
沿って各真空処理室内に導かせることを繰返しつ)、該
搬送全白を該搬送路に沿って前方又は前後方に導かせる
ようにして成る。
(Means for Solving the Problems) The object of the present invention is to obtain an apparatus free from the above-mentioned disadvantages, in which a substrate is sequentially guided into a plurality of vacuum processing chambers, and each In a processing chamber in which each vacuum treatment is performed, a vacuum transfer chamber is provided for accommodating a transfer means for guiding the substrate along a transfer path in the front and back direction, and
The plurality of vacuum processing chambers are sequentially arranged on the side thereof, and these are communicated in parallel with each other through gate valves into the vacuum transfer chamber, and furthermore, each vacuum processing chamber is connected to the transfer path through each gate valve. Each branch path extending into the processing chamber is formed, and each auxiliary transport means is provided in the vacuum transfer chamber to allow the substrate to be freely introduced and guided into each vacuum processing chamber along each branch path, and the substrate is moved along each branch path. (repeatedly), and the entire conveyed white is guided forward or back and forth along the conveyance path.

第2図面の簡単な説明線図であり、図中(1)は基体A
を前後方向の搬送路Xに沿って導く搬送手段、(2)は
該搬送手段(1)を収容する真空搬送室、(3)は該交
(2)内を所定の真空度に排気する真空排気系を示し、
その側方にスパッタリングその他の真空処理用の真空処
理室(4)を前後の複数個に配設すると共に、これらを
互に並列に各仕切弁(5)を介して該搬送室(2)内に
連通させるようにした。図面で(6)は各処理室(4)
内を所定の真空度に排気する各真空排気系を示す。更に
、前記した搬送路Xに、各仕切弁(5)を介して各処理
室(4)内にのびる各分岐路Yを形成させると共に、該
搬送室(2)内に該基体Aを各分岐路Yに沿って、各処
理室(4)内に導入導出自在の各補助搬送手段(7)を
備え、かくて、該基体Aを、各分岐路Yに沿って各真空
処理室(4)内に導くことを繰返しつつ、該搬送室(2
)内を該搬送路Xに沿って前方に導かせて、その前方に
製品として取出自在とした。図面で(8)は該搬送室(
2)の前後に各仕切弁(5)を介して連なる各予備真空
室、(9)はその真空排気系を示す。
It is a simple explanatory diagram of the second drawing, in which (1) is the base A
(2) is a vacuum transfer chamber that accommodates the transfer means (1), and (3) is a vacuum that evacuates the interior of the intersection (2) to a predetermined degree of vacuum. Shows the exhaust system,
A plurality of vacuum processing chambers (4) for sputtering and other vacuum processing are arranged on the side thereof, and these are connected in parallel to each other through gate valves (5) into the transfer chamber (2). I tried to communicate with . In the drawing, (6) is each processing room (4)
Each vacuum evacuation system that evacuates the interior to a predetermined degree of vacuum is shown. Furthermore, each branch path Y extending into each processing chamber (4) via each gate valve (5) is formed in the above-mentioned transport path Along the path Y, each auxiliary transport means (7) is provided which can be freely introduced into and taken out of each processing chamber (4), so that the substrate A can be transferred along each branch path Y into each vacuum processing chamber (4). While repeating the process of guiding the
) was guided forward along the conveyance path X, so that it could be freely taken out as a product in front of it. In the drawing, (8) is the transfer chamber (
Each preparatory vacuum chamber is connected before and after 2) via each gate valve (5), and (9) shows its evacuation system.

尚図示のものでは、真空!2!l理室(4)を該搬送室
(2)に対し、その左右の両側に各複数個に配置したが
、これに限ることなく、その−側のみとすることも可能
であり、更に上下の両側或はその一側とすることも可能
である。更に該基体Aは図示の場合水平状態で導かれて
処理されるが、これを垂直状態とすることも可能である
In addition, the one shown is a vacuum! 2! Although a plurality of l-labor rooms (4) are arranged on both the left and right sides of the transfer room (2), the present invention is not limited to this, and it is also possible to arrange them only on the - side, and furthermore, It is also possible to use both sides or one side thereof. Further, although the substrate A is guided and processed in a horizontal state in the illustrated case, it is also possible to have it in a vertical state.

(作 用) その作用を説明するに、各真空処f ! (4)内は、
基体Aの導入導出に際し、各仕切弁(5)が開いてその
側方の真空搬送室(2)内と連通されて、該搬送室(2
)内の各対応する補助搬送手段(7)を導かれるに留ま
り、かくて該基体Aを順次移動させるに際し、各隣接す
る処理掌内が互に直接的に連通される型式のものにおけ
る雰囲気汚染がないと共に、搬送手段が雨空間を移動す
る型式のものにおける粒子汚染もなく、これを換言すれ
ば、前記した従来のものにおける各種の不都合を無くす
ことが出来る。
(Function) To explain the function, each vacuum treatment f! (4) is
When introducing and extracting the substrate A, each gate valve (5) opens and communicates with the inside of the vacuum transfer chamber (2) on the side thereof.
) in which the corresponding auxiliary conveyance means (7) are guided, and thus, when the substrate A is sequentially moved, the atmosphere contamination occurs in the type in which the adjacent processing handles are in direct communication with each other. In addition, there is no particle contamination in a type in which the conveyance means moves through a rainy space, and in other words, various inconveniences in the conventional type described above can be eliminated.

(実施例) 第3図はその実施の1例を示寸もので、この場合、該基
体Aはシリコンウェハから成り、該真空処理室(4)は
、該真空搬送室(2)の上側に前後の3個に備えられる
ようにし、更に詳細には、該3個は、内部にエツチング
電極(4a)を有する前段のRFエツチング処理室(4
)と、内部にスパッタ源(4b)を有する中段の第1ス
パツタリング処理室(4)と、内部にスパッタ源(4b
)を有する後段の第2スパツタリング処理室(4)とか
ら成るようにし、更に該予備真空室(8)をその前後に
配置するようにした。更に該搬送手段(1)は該搬送室
(2)内の下側を前後方向にのびるベルトコンベヤ(1
a)と、その端部のモータその他の駆vJ源(1b)と
から成ると共に、該コンベヤ(1a)上には基体受(1
C)を備える型式から成り、更に各分岐路Yは該搬送路
Xから上方にのびるもので、各補助搬送手段(7)は流
体圧シリンダ(7a)に連結されて上方にのびる昇降ロ
ッド(7b)の先端に、基体受(7C)を備える型式と
した。尚図示のものでは、前後の各予備真空室(8)に
ついても、略同様に分岐路Yと、これに沿って昇降する
各補助搬送手段(7)とを備えるようにした。
(Example) FIG. 3 shows an example of its implementation, in which the substrate A is made of a silicon wafer, and the vacuum processing chamber (4) is placed above the vacuum transfer chamber (2). The front and rear RF etching chambers (4a) are provided in the front and rear RF etching processing chambers (4a), and more specifically, these three
), a middle-stage first sputtering processing chamber (4) having a sputtering source (4b) therein;
) and a second sputtering processing chamber (4) at the rear stage, and the preliminary vacuum chambers (8) are arranged before and after the second sputtering processing chamber (4). Further, the conveyance means (1) includes a belt conveyor (1) extending in the front and back direction on the lower side of the conveyance chamber (2).
a) and a motor or other drive source (1b) at the end thereof, and a substrate holder (1b) on the conveyor (1a).
C), and each branch path Y extends upward from the conveyance path X, and each auxiliary conveyance means (7) has a lifting rod (7b ) is equipped with a base holder (7C) at the tip. In the illustrated embodiment, the front and rear preliminary vacuum chambers (8) are also provided with a branch path Y and each auxiliary conveyance means (7) that ascends and descends along the branch path Y in substantially the same way.

その作動を説明するに、基体Aを、前方の予備真空室(
8)内に大気から導入した後、該室(8)内を真空排気
し、次いでその下側の仕切弁(5)を開くと共に、その
下側の補助搬送手段(7)を−旦上動させて、該基体へ
をその下側搬送り(2)内に取出し、次いで該仕切弁(
5)を閉じる。この際、該基体Aは、該搬送手段(7)
側の基体受(7C)からその上部空間に待機する搬送手
段(1)側の基体受(1C)に移載されるものとし、次
いで該搬送手段(1)の作動により、該基体Aは、次位
の真空処理室(4)の直下に導かれる。次いでこの状態
から該室(4)の仕切り弁(5)を開くと共にその下側
の補助搬送手段(7)を−旦上動すれば、該基体Aは該
処理室(4)内に導かれ、次いで該仕切弁(5)を閉じ
るもので、かくて該基体へは該至(4)内における所定
の真空処理、例えばスパッタリング処理を施される。該
基体Aは、事後略同様にして、その後方の各処理室(4
)内に順次導かれて各真空処理を順次導された後、この
後方の予備真空室(8)内を介して外部に取出される。
To explain its operation, the base A is placed in the preliminary vacuum chamber (
8) After introducing air into the chamber (8), the inside of the chamber (8) is evacuated, and then the lower gate valve (5) is opened, and the lower auxiliary conveying means (7) is moved upward. the base body into its lower conveyor (2), and then the gate valve (
5) Close. At this time, the base A is connected to the conveying means (7).
The substrate A is transferred from the substrate receiver (7C) on the side to the substrate receiver (1C) on the transport means (1) side waiting in the upper space, and then by the operation of the transport means (1), the substrate A is It is guided directly below the next vacuum processing chamber (4). Next, from this state, when the gate valve (5) of the chamber (4) is opened and the auxiliary conveyance means (7) below it is moved upward, the substrate A is guided into the processing chamber (4). Then, the gate valve (5) is closed, and the substrate is subjected to a predetermined vacuum treatment, such as a sputtering treatment, in the opening (4). The substrate A is then installed in each processing chamber (4
) and are sequentially guided through each vacuum treatment, and then taken out to the outside through the preliminary vacuum chamber (8) at the rear.

基体Aの動きは、例えば第4図に示す通りであり、この
場合、前方の予備真空室(8)内の基体Aは、その下側
の補助搬送手段(7)の上動により、取出しに備えられ
るものとし、その後方の真空処理室(4)内の基体へは
、処理を終了してその下方に取出された状態に存し、そ
の後方の各処理室(4)内に基体Aは、各仕切弁(5)
が閉じて、各真空処理を施される状態に存する。
The movement of the substrate A is, for example, as shown in FIG. The substrates in the vacuum processing chambers (4) at the rear of the vacuum processing chambers (4) are taken out from the bottom after finishing the processing, and the substrates A are placed in each of the processing chambers (4) at the rear of the vacuum processing chambers (4). , each gate valve (5)
is closed and ready for each vacuum treatment.

尚上記はスパッタリング処理の場合であるが、これに限
、ることな(、例えば各処理室(4)内でドライエツチ
ング処理を行なわせることも可能であり、この場合、冬
至(4)内には図示しない導入系により各エツチングガ
スが導入されるものとする。
The above is a case of sputtering processing, but it is not limited to this. For example, it is also possible to perform dry etching processing in each processing chamber (4), and in this case, during the winter solstice (4) It is assumed that each etching gas is introduced by an introduction system (not shown).

(発明の効果) このように本発明によるときは、複数個の真空処理室を
、各仕切弁を介して、互に並列にその側方の真空搬送室
内に連通させるもので、各処理室を互に直列に接続する
式のものにおける雰囲気汚染を無くすことが出来、更に
各処理室内には、各分岐路上の各補助搬送手段を介して
基体が導かれるもので、各隣接する処理空間に搬送手段
が移動して基体が導かれる式のものにおける粒子汚染を
も無くすことが出来、かくて従来のものにおける前記し
た不都合を無くし得られ、作業も簡単且つ高能率にする
等の効果を有する。
(Effects of the Invention) As described above, according to the present invention, a plurality of vacuum processing chambers are communicated with each other in parallel to the vacuum transfer chambers on their sides through the respective gate valves, and each processing chamber is connected to the vacuum transfer chamber on the side thereof. It is possible to eliminate atmospheric contamination in systems that are connected in series, and furthermore, the substrates are guided into each processing chamber via each auxiliary transport means on each branch path, and are transported to each adjacent processing space. It is also possible to eliminate particle contamination in the type in which the substrate is guided by moving means, thereby eliminating the above-mentioned disadvantages of the conventional type, and has the effect of simplifying the work and making it highly efficient.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来例の説明線図、第2図は本発明装置の原理
的説明線図、第3図はその実施の1例の説明線図、第4
図はその作動を説明する線図である。 A・・・基体       X・・・搬送路(1)・・
・搬送手段     (2)・・・真空排気!(4)・
・・真空処理室    (5)・・・仕切弁Y・・・分
岐路      (7)・・・補助搬送手段時 許 出
 願 人 日本真空技術株式会社外2名− 第1図 第2図 第4図
Fig. 1 is an explanatory diagram of a conventional example, Fig. 2 is an explanatory diagram of the principle of the device of the present invention, Fig. 3 is an explanatory diagram of an example of its implementation, and Fig. 4 is an explanatory diagram of an example of its implementation.
The figure is a diagram explaining its operation. A... Base body X... Conveyance path (1)...
・Transportation means (2)...Vacuum exhaust! (4)・
...Vacuum processing chamber (5)...Gate valve Y...Diversion path (7)...Auxiliary conveyance means Applicant: 2 people other than Japan Vacuum Technology Co., Ltd. - Figure 1 Figure 2 Figure 4 figure

Claims (1)

【特許請求の範囲】[Claims]  基体を、複数個の真空処理室内に順次に導かせて、こ
れに各処理室内で、各真空処理を施すようにしたものに
おいて、該基体を前後方向の搬送路に沿つて導く搬送手
段を収容する真空搬送室を設けると共に、その側方に該
複数個の真空処理室を順次に配置して、これらを互いに
並列に各仕切弁を介して該真空搬送室内に連通させ、更
に該搬送路に各仕切弁を介して各真空処理室内にのびる
各分岐路を形成させると共に、該真空搬送室内に該基体
を各分岐路に沿つて各真空処理室内に導入導出自在の各
補助搬送手段を備え、該基体を各分岐路に沿って各真空
処理室内に導かせることを繰返しつゝ、該搬送室内を該
搬送路に沿って前方又は前後方にくりかえして導かせる
ようにして成る真空処理装置。
In a system in which a substrate is sequentially introduced into a plurality of vacuum processing chambers and subjected to various vacuum treatments in each processing chamber, a conveyance means for guiding the substrate along a forward and backward conveyance path is housed. A vacuum transfer chamber is provided, and the plurality of vacuum processing chambers are sequentially arranged on the side thereof, and these are connected in parallel to each other through gate valves into the vacuum transfer chamber, and furthermore, a Each branch path extending into each vacuum processing chamber is formed through each gate valve, and each auxiliary transport means is provided in the vacuum transfer chamber to freely introduce and extract the substrate into each vacuum processing chamber along each branch path, A vacuum processing apparatus which repeatedly guides the substrate into each vacuum processing chamber along each branch path, and repeatedly guides the substrate forward or back and forth along the transfer path within the transfer chamber.
JP17084286A 1986-07-22 1986-07-22 Vacuum treatment device Pending JPS6328863A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17084286A JPS6328863A (en) 1986-07-22 1986-07-22 Vacuum treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17084286A JPS6328863A (en) 1986-07-22 1986-07-22 Vacuum treatment device

Publications (1)

Publication Number Publication Date
JPS6328863A true JPS6328863A (en) 1988-02-06

Family

ID=15912337

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17084286A Pending JPS6328863A (en) 1986-07-22 1986-07-22 Vacuum treatment device

Country Status (1)

Country Link
JP (1) JPS6328863A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6431971A (en) * 1987-07-28 1989-02-02 Tokuda Seisakusho Vacuum treatment device
JPH0851139A (en) * 1990-03-30 1996-02-20 Tokyo Electron Ltd Processor
US5695564A (en) * 1994-08-19 1997-12-09 Tokyo Electron Limited Semiconductor processing system
US6290824B1 (en) * 1992-10-28 2001-09-18 Hitachi, Ltd. Magnetic film forming system
US6491802B2 (en) 1992-10-28 2002-12-10 Hitachi, Ltd. Magnetic film forming system
FR2843129A1 (en) * 2002-08-01 2004-02-06 Tecmachine PLANT FOR VACUUM PROCESSING, IN PARTICULAR OF SUBSTRATES
US7837796B2 (en) 2007-02-02 2010-11-23 Applied Materials, Inc. Process chamber, inline coating installation and method for treating a substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941470A (en) * 1982-08-31 1984-03-07 Shimadzu Corp Multi-chamber type thin film fabricating apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941470A (en) * 1982-08-31 1984-03-07 Shimadzu Corp Multi-chamber type thin film fabricating apparatus

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6431971A (en) * 1987-07-28 1989-02-02 Tokuda Seisakusho Vacuum treatment device
JPH0242901B2 (en) * 1987-07-28 1990-09-26
JPH0851139A (en) * 1990-03-30 1996-02-20 Tokyo Electron Ltd Processor
US6290824B1 (en) * 1992-10-28 2001-09-18 Hitachi, Ltd. Magnetic film forming system
US6491802B2 (en) 1992-10-28 2002-12-10 Hitachi, Ltd. Magnetic film forming system
US5695564A (en) * 1994-08-19 1997-12-09 Tokyo Electron Limited Semiconductor processing system
FR2843129A1 (en) * 2002-08-01 2004-02-06 Tecmachine PLANT FOR VACUUM PROCESSING, IN PARTICULAR OF SUBSTRATES
WO2004013375A1 (en) * 2002-08-01 2004-02-12 Tecmachine Installation for the vacuum treatment of substrates
US7886686B2 (en) 2002-08-01 2011-02-15 Tecmachine Installation for the vacuum treatment in particular of substrates
US7837796B2 (en) 2007-02-02 2010-11-23 Applied Materials, Inc. Process chamber, inline coating installation and method for treating a substrate

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