JPS63285796A - 半導体メモリ装置 - Google Patents
半導体メモリ装置Info
- Publication number
- JPS63285796A JPS63285796A JP62120274A JP12027487A JPS63285796A JP S63285796 A JPS63285796 A JP S63285796A JP 62120274 A JP62120274 A JP 62120274A JP 12027487 A JP12027487 A JP 12027487A JP S63285796 A JPS63285796 A JP S63285796A
- Authority
- JP
- Japan
- Prior art keywords
- bit line
- normally
- low level
- node
- bit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims description 2
- 230000003068 static effect Effects 0.000 claims 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 101150079361 fet5 gene Proteins 0.000 description 3
- 101150015217 FET4 gene Proteins 0.000 description 2
- 230000005669 field effect Effects 0.000 description 1
Landscapes
- Static Random-Access Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62120274A JPS63285796A (ja) | 1987-05-19 | 1987-05-19 | 半導体メモリ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62120274A JPS63285796A (ja) | 1987-05-19 | 1987-05-19 | 半導体メモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63285796A true JPS63285796A (ja) | 1988-11-22 |
JPH0459719B2 JPH0459719B2 (enrdf_load_html_response) | 1992-09-24 |
Family
ID=14782175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62120274A Granted JPS63285796A (ja) | 1987-05-19 | 1987-05-19 | 半導体メモリ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63285796A (enrdf_load_html_response) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5325331A (en) * | 1991-04-04 | 1994-06-28 | Micron Technology, Inc. | Improved device for sensing information store in a dynamic memory |
KR100498589B1 (ko) * | 1997-12-30 | 2005-09-12 | 주식회사 하이닉스반도체 | 클램프 회로 |
-
1987
- 1987-05-19 JP JP62120274A patent/JPS63285796A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5325331A (en) * | 1991-04-04 | 1994-06-28 | Micron Technology, Inc. | Improved device for sensing information store in a dynamic memory |
KR100498589B1 (ko) * | 1997-12-30 | 2005-09-12 | 주식회사 하이닉스반도체 | 클램프 회로 |
Also Published As
Publication number | Publication date |
---|---|
JPH0459719B2 (enrdf_load_html_response) | 1992-09-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313115 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
EXPY | Cancellation because of completion of term |