JPS6328509B2 - - Google Patents
Info
- Publication number
- JPS6328509B2 JPS6328509B2 JP1885582A JP1885582A JPS6328509B2 JP S6328509 B2 JPS6328509 B2 JP S6328509B2 JP 1885582 A JP1885582 A JP 1885582A JP 1885582 A JP1885582 A JP 1885582A JP S6328509 B2 JPS6328509 B2 JP S6328509B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- brightness
- emitting diode
- semiconductor substrate
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 description 18
- 239000002184 metal Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000005387 chalcogenide glass Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
【発明の詳細な説明】
この発明は、発光ダイオード表示素子の各発光
領域の輝度を簡単に均一化できるようにした発光
ダイオードに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a light emitting diode in which the brightness of each light emitting region of a light emitting diode display element can be easily made uniform.
半導体基板上（以下、チツプと称す）に複数個
の発光領域をもつ発光ダイオードの一例として、
第１図に「８」字型発光ダイオード表示素子の発
光部を示す。この第１図において、１は半導体基
板であり、２〜８はそれぞれ発光領域である。 As an example of a light emitting diode having multiple light emitting regions on a semiconductor substrate (hereinafter referred to as a chip),
FIG. 1 shows the light emitting part of the "8" shaped light emitting diode display element. In FIG. 1, 1 is a semiconductor substrate, and 2 to 8 are light emitting regions.
このような「８」字型発光ダイオード表示素子
における数字の表示は発光領域２〜８により行わ
れるが、その際、表示品質を高めるためには、発
光領域間の輝度バラツキをなくする必要がある。
この発光領域２〜８間の輝度バラツキは、たとえ
ば、発光ダイオードを構成する半導体基板中の不
純物キヤリア密度、欠陥密度のバラツキや、発光
部から外部にいたる光学的経路のバラツキなどに
寄因する。 Display of numbers in such an "8"-shaped light emitting diode display element is performed by light emitting regions 2 to 8, but in this case, in order to improve display quality, it is necessary to eliminate variations in brightness among the light emitting regions. .
The brightness variations between the light emitting regions 2 to 8 are due to, for example, variations in the impurity carrier density and defect density in the semiconductor substrate constituting the light emitting diode, and variations in the optical path from the light emitting section to the outside.
従来、発光領域２〜８間の輝度バラツキを減少
させる方法として、上記の輝度バラツキの原因を
減少させる努力がとられた。たとえば、均一な半
導体基板を得る製造方法などが検討されている。 Conventionally, as a method for reducing luminance variations between the light emitting regions 2 to 8, efforts have been made to reduce the causes of the luminance variations described above. For example, methods of manufacturing uniform semiconductor substrates are being studied.
しかし、技術的制約からそれらの問題は完全に
解決されておらず、発光ダイオードの発光領域間
の輝度バラツキをある程度許容する必要があり、
発光ダイオード数字表示素子の品質低下の原因と
なつていた。 However, due to technical constraints, these problems have not been completely resolved, and it is necessary to allow some variation in brightness between the light emitting regions of the light emitting diode.
This was a cause of deterioration in the quality of light-emitting diode numeric display elements.
この発明は、上記従来の欠点を解決するために
なされたもので、各発光領域上に輝度調整用の膜
を付け、各発光領域間の輝度を均一化でき、微細
な部分の輝度調整を簡単に行うことができ、しか
も、高品質の数字表示素子などに利用できる発光
ダイオードを提供することを目的とする。 This invention was made in order to solve the above-mentioned conventional drawbacks, and by attaching a film for brightness adjustment on each light-emitting area, it is possible to equalize the brightness between each light-emitting area, and it is easy to adjust the brightness of minute parts. It is an object of the present invention to provide a light emitting diode that can be used for high quality numeric display elements and the like.
以下、この発明の発光ダイオードの実施例につ
いて図面に基づき説明する。第２図はこの発明の
発光ダイオードによる「８」字型発光ダイオード
表示素子の発光部を示す平面図であり、第３図は
第２図の―線に沿つて切断して示す断面図で
あり、さらに、第４図は第３図の構造の製造工程
を説明するための断面図である。 Embodiments of the light emitting diode of the present invention will be described below with reference to the drawings. FIG. 2 is a plan view showing the light emitting part of an "8"-shaped light emitting diode display element using the light emitting diode of the present invention, and FIG. 3 is a sectional view taken along the line - in FIG. Furthermore, FIG. 4 is a sectional view for explaining the manufacturing process of the structure shown in FIG. 3.
この第２図ないし第４図において、１１はＮ型
（またはＰ型）化合物半導体基板であり、このＮ
型化合物半導体基板１１上にはＰ型（またはＮ
型）拡散層１２，１３が形成されている。このＰ
型拡散層１２，１３上およびＮ型化合物半導体基
板１１の上面全体に絶縁膜１４が形成されてい
る。 In FIGS. 2 to 4, 11 is an N-type (or P-type) compound semiconductor substrate;
P-type (or N-type compound semiconductor substrate 11)
type) diffusion layers 12 and 13 are formed. This P
An insulating film 14 is formed on the type diffusion layers 12 and 13 and on the entire upper surface of the N-type compound semiconductor substrate 11.
この絶縁膜１４上には、カルコゲナイドガラス
（AS2S3）が設けられている。カルコゲナイドガ
ラス１５の上面には各Ｐ型拡散層１２，１３に対
応してそれぞれ金属拡散部１６，１７が拡散され
ている。カルコゲナイドガラス１５への金属拡散
部１６，１７は金属拡散量により、光の透過条件
が変化するため、輝度減少用の膜として作用す
る。なお、１８はＮ型化合物半導体基板１１に設
けられたＮ側電極である。 Chalcogenide glass (A S2 S 3 ) is provided on this insulating film 14. Metal diffusion portions 16 and 17 are diffused on the upper surface of the chalcogenide glass 15 in correspondence with the P-type diffusion layers 12 and 13, respectively. The metal diffusion parts 16 and 17 to the chalcogenide glass 15 act as a film for reducing brightness because the light transmission conditions change depending on the amount of metal diffusion. Note that 18 is an N-side electrode provided on the N-type compound semiconductor substrate 11.
次に、上記カルコゲナイドガラス１５への金属
拡散方法を説明する。最初に、第４図に示すよう
に、絶縁膜１４上にカルコゲナイドガラス１５の
薄膜を作り、さらに、蒸着、スパツタリングなど
の手段によつて、銀または銅薄膜（以下、金属薄
膜と云う）１９を形成する。この第４図におい
て、上記以外の部分は第３図と同じである。 Next, a method for diffusing metal into the chalcogenide glass 15 will be explained. First, as shown in FIG. 4, a thin film of chalcogenide glass 15 is formed on the insulating film 14, and then a silver or copper thin film (hereinafter referred to as metal thin film) 19 is formed by means such as vapor deposition or sputtering. Form. In this FIG. 4, the parts other than the above are the same as in FIG. 3.
次に、発光ダイオードの各Ｐ型拡散層１２，１
３すなわち、発光領域を同一の電流値で発光する
と、この発光により各Ｐ型拡散層１２，１３の上
方の金属薄膜１９の一部がカルコゲナイドガラス
１５と反応して、相互拡散を行う。 Next, each P type diffusion layer 12, 1 of the light emitting diode
3. That is, when the light emitting regions are emitted with the same current value, a portion of the metal thin film 19 above each of the P-type diffusion layers 12 and 13 reacts with the chalcogenide glass 15 due to the light emission, thereby performing mutual diffusion.
この際、露光量に比例してカルコゲナイドガラ
ス１５中への金属薄膜１９の拡散量が増加するた
め、発光ダイオードの点灯時間を一定にすると、
輝度の高い拡散領域ほど輝度に比例してカルコゲ
ナイドガラス１５への金属拡散量が増す。 At this time, since the amount of diffusion of the metal thin film 19 into the chalcogenide glass 15 increases in proportion to the amount of exposure, if the lighting time of the light emitting diode is kept constant,
The higher the brightness of the diffusion region, the more the amount of metal diffused into the chalcogenide glass 15 increases in proportion to the brightness.
さらに、この金属薄膜１９を塩酸「３」と硝酸
「１」の割合で混合した酸溶液で除去し、第４図
に示す構造とする。この場合、上記の金属薄膜１
９の除去が定着処理となり、生成された金属拡散
部１６，１７は発光ダイオードの照射下でも安定
となる。 Further, this metal thin film 19 is removed with an acid solution containing 3 parts of hydrochloric acid and 1 part of nitric acid, resulting in the structure shown in FIG. In this case, the above metal thin film 1
The removal of 9 becomes a fixing process, and the generated metal diffusion parts 16 and 17 become stable even under irradiation with a light emitting diode.
この金属拡散部１６，１７の濃度は上記のよう
に輝度に比例し、さらに金属拡散部１６，１７の
光吸収作用により、Ｐ型拡散層１２，１３の輝度
バラツキは金属拡散部１６，１７で吸収され、外
部から見た輝度は均一となる。 As mentioned above, the concentration of the metal diffusion parts 16 and 17 is proportional to the brightness, and due to the light absorption effect of the metal diffusion parts 16 and 17, the brightness variation of the P-type diffusion layers 12 and 13 is reduced by the metal diffusion parts 16 and 17. The light is absorbed, and the brightness seen from the outside becomes uniform.
このように、上記実施例では、発光素子内の改
良に関しては、従来不可能であつた各発光領域間
の輝度のバラツキを解決することができるため、
より高品質の発光素子を簡単に得ることができ
る。 In this way, in the above embodiment, it is possible to solve the variation in brightness between each light emitting region, which was previously impossible, with regard to improvement within the light emitting element.
Higher quality light emitting elements can be easily obtained.
さらに、従来は発光領域間の輝度バラツキが大
きくて、不良品となつていた素子でも、この発明
においては均一な輝度をもつ発光素子とすること
ができるため、製造ラインにおける良品歩留りが
著しく増加することになる。 Furthermore, even though conventional devices would be defective due to large variations in brightness between light-emitting regions, with this invention they can be made into light-emitting devices with uniform brightness, significantly increasing the yield of good products on the manufacturing line. It turns out.
以上のように、この発明の発光ダイオードによ
れば、複数個の発光領域をもつチツプ上に輝度調
整用の薄膜を設け、各発光領域の輝度のバラツキ
を吸収するようにしたので、発光ダイオードの各
発光領域自体の発光を用いて外部から見た輝度を
均一にできる。したがつて、微細な部分の輝度調
整を簡単に行うことができ、発光ダイオードによ
る高品質な数字表示素子などに利用することがで
きる。 As described above, according to the light emitting diode of the present invention, a thin film for brightness adjustment is provided on a chip having a plurality of light emitting regions to absorb variations in brightness of each light emitting region. Using the light emitted from each light emitting region itself, the brightness seen from the outside can be made uniform. Therefore, it is possible to easily adjust the brightness of minute parts, and it can be used in high-quality numeric display elements using light emitting diodes.
第１図は「８」字型発光ダイオード表示素子の
発光部を示す平面図、第２図はこの発明の発光ダ
イオードによる「８」字型発光ダイオード表示素
子の発光部を示す平面図、第３図は第２図の―
線に沿つて切断して示す断面図、第４図はこの
発明の発光ダイオードの製造工程を説明するため
の断面図である。
１１……Ｎ型化合物半導体基板、１２，１３…
…Ｐ型拡散層、１４……絶縁膜、１５……カルコ
ゲナイドガラス、１６，１７……金属拡散部、１
８……Ｎ側電極、１９……金属薄膜。
FIG. 1 is a plan view showing the light emitting part of an "8" shaped light emitting diode display element, FIG. 2 is a plan view showing the light emitting part of the "8" shaped light emitting diode display element using the light emitting diode of the present invention, and FIG. The figure is from Figure 2.
FIG. 4 is a cross-sectional view cut along a line, and FIG. 4 is a cross-sectional view for explaining the manufacturing process of the light emitting diode of the present invention. 11... N-type compound semiconductor substrate, 12, 13...
... P-type diffusion layer, 14 ... Insulating film, 15 ... Chalcogenide glass, 16, 17 ... Metal diffusion part, 1
8... N-side electrode, 19... Metal thin film.
Claims (1)
とは反対の導電型を有する複数個の発光領域を形
成し、この発光領域を有する半導体基板上に輝度
調整用の薄膜を形成してなることを特徴とする発
光ダイオード。1. A plurality of light emitting regions having the opposite conductivity type are formed on a semiconductor substrate having a predetermined conductivity type, and a thin film for brightness adjustment is formed on the semiconductor substrate having the light emitting regions. A light emitting diode featuring
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57018855A JPS58137269A (en) | 1982-02-10 | 1982-02-10 | Light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57018855A JPS58137269A (en) | 1982-02-10 | 1982-02-10 | Light-emitting diode |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1112241A Division JPH0256974A (en) | 1989-05-02 | 1989-05-02 | Manufacture of light-emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58137269A JPS58137269A (en) | 1983-08-15 |
| JPS6328509B2 true JPS6328509B2 (en) | 1988-06-08 |
Family
ID=11983146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57018855A Granted JPS58137269A (en) | 1982-02-10 | 1982-02-10 | Light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58137269A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63187674A (en) * | 1987-01-30 | 1988-08-03 | Yokogawa Medical Syst Ltd | Manufacture of light-emitting element array |
| JP7311276B2 (en) * | 2019-02-26 | 2023-07-19 | ローム株式会社 | semiconductor light emitting device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3081450A (en) * | 1958-05-01 | 1963-03-12 | Senn Custom Inc | Digit display apparatus |
| JPS5117824U (en) * | 1974-07-29 | 1976-02-09 | ||
| JPS5143090A (en) * | 1974-10-09 | 1976-04-13 | Sony Corp |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5448587U (en) * | 1977-09-09 | 1979-04-04 |
-
1982
- 1982-02-10 JP JP57018855A patent/JPS58137269A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3081450A (en) * | 1958-05-01 | 1963-03-12 | Senn Custom Inc | Digit display apparatus |
| JPS5117824U (en) * | 1974-07-29 | 1976-02-09 | ||
| JPS5143090A (en) * | 1974-10-09 | 1976-04-13 | Sony Corp |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58137269A (en) | 1983-08-15 |
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