JPS63282134A - Synthetic quartz glass pipe and production thereof - Google Patents
Synthetic quartz glass pipe and production thereofInfo
- Publication number
- JPS63282134A JPS63282134A JP11783587A JP11783587A JPS63282134A JP S63282134 A JPS63282134 A JP S63282134A JP 11783587 A JP11783587 A JP 11783587A JP 11783587 A JP11783587 A JP 11783587A JP S63282134 A JPS63282134 A JP S63282134A
- Authority
- JP
- Japan
- Prior art keywords
- synthetic quartz
- quartz glass
- layer
- quartz
- bubbles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 104
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000010453 quartz Substances 0.000 claims abstract description 43
- 239000000843 powder Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000011521 glass Substances 0.000 claims abstract description 5
- 238000012856 packing Methods 0.000 claims abstract description 3
- 239000002245 particle Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 abstract description 10
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000006260 foam Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B17/00—Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
- C03B17/04—Forming tubes or rods by drawing from stationary or rotating tools or from forming nozzles
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/01—Other methods of shaping glass by progressive fusion or sintering of powdered glass onto a shaping substrate, i.e. accretion, e.g. plasma oxidation deposition
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B23/00—Re-forming shaped glass
- C03B23/04—Re-forming tubes or rods
- C03B23/047—Re-forming tubes or rods by drawing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Glass Melting And Manufacturing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は合成石英ガラス管およびその製造方法、特には
実質的に泡のない上下二層の石英層の間に微細な泡を多
数包含する石英層を設けた三層構造からなる、熱的強度
のすぐれた半導体工業分野などで有用とされる新規な合
成石英ガラス管およびその製造方法に関するものである
。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a synthetic quartz glass tube and a method for manufacturing the same, particularly a synthetic quartz glass tube containing a large number of fine bubbles between two substantially bubble-free upper and lower quartz layers. The present invention relates to a new synthetic quartz glass tube having a three-layer structure with a quartz layer, which has excellent thermal strength and is useful in the semiconductor industry, and a method for manufacturing the same.
（従来の技術）
半導体工業用、特にシリコンウェーハの熱処理治具とし
て石英製のものが汎用されているが、これらはその殆ど
が天然水晶またはけい砂を原料とした天然石英ガラス製
のものとされている。しかし、この天然石英ガラスには
多種類の不純物が存在しているためにそれらを加工工程
中で完全に除去することは非常に難しく、含有不純物が
半導体の熱処理工程中に拡散、侵透してシリコンウェー
ハを汚染するために、その工程歩留りがわるくなるとい
うことが知られている。(Prior art) Quartz jigs are commonly used in the semiconductor industry, especially as heat treatment jigs for silicon wafers, but most of these are made of natural quartz glass made from natural quartz or silica sand. ing. However, since this natural quartz glass contains many types of impurities, it is very difficult to completely remove them during the processing process, and the impurities contained in the glass diffuse and penetrate during the semiconductor heat treatment process. It is known that contamination of silicon wafers reduces the process yield.
このため、半導体工業用に使用される石英ガラス部材を
高純度のけい素化合物を出発原料として化学的に製造さ
れた合成石英ガラスとすることも検討されたけれども、
合成石英ガラスは一般に天然石英ガラスに比較して高温
では軟化し易く、半導体製造用部材としたときに繰り返
しの高温熱処理工程では比較的短時間で変形して遂には
その機能を果たさなくなるという不利があることから、
合成石英ガラスの使用については天然石英ガラスとの多
層構造をとるなどして耐熱性向上の改善も試みられてい
るが、これらは純度の問題もあり満足すべき結果は得ら
れていない。For this reason, it has been considered to use synthetic quartz glass chemically manufactured using high-purity silicon compounds as starting materials for the quartz glass members used in the semiconductor industry.
Synthetic quartz glass is generally more susceptible to softening at high temperatures than natural quartz glass, and when used as a component for semiconductor manufacturing, it deforms in a relatively short period of time during repeated high-temperature heat treatment processes and eventually loses its function. For some reason,
Regarding the use of synthetic quartz glass, attempts have been made to improve heat resistance by creating a multilayer structure with natural quartz glass, but these have not yielded satisfactory results due to problems with purity.
（発明の構成）
本発明はこのような不利を解決した合成石英ガラス管に
関するものであり、これは実質的に泡を含まない上下二
層の石英層の中間に微細な泡を多数包含する石英層を設
けて三層構造としてなることを特徴とするものである。(Structure of the Invention) The present invention relates to a synthetic quartz glass tube that solves these disadvantages, and is made of quartz glass containing a large number of fine bubbles between two quartz layers, upper and lower layers, which are substantially free of bubbles. It is characterized by having a three-layer structure.
すなわち、本発明者らは熱的変形することのない合成石
英ガラス管の開発について種々検討した結果、けい素化
合物からの化学的手段で作られた高純度の合成石英ガラ
ス管を２重管とし、この二層の間に粉末状の合成石英粉
を充填し加熱溶融して延伸一体化させると、実質的に泡
のない合成石英層の中間に微細な泡を多数包含する合成
石英層が設けられて、この泡が壁構造上ハニカム形状ま
たはトラス形状となるので、このものが機械的強度の大
きいものとなって高温状態での熱的変形が抑制されるよ
うになるということを見出し、これによれば半導体工業
用に使用される熱処理治具としての合成石英製品を容易
に得ることができることを確認して本発明を完成させた
。That is, as a result of various studies on the development of synthetic quartz glass tubes that do not undergo thermal deformation, the present inventors have developed a double tube made of high purity synthetic quartz glass tubes made by chemical means from silicon compounds. When powdered synthetic quartz powder is filled between these two layers, heated and melted, and then stretched and integrated, a synthetic quartz layer containing many fine bubbles is created between the synthetic quartz layer that is substantially free of bubbles. They discovered that this foam has a honeycomb or truss wall structure, which increases its mechanical strength and suppresses thermal deformation at high temperatures. The present invention was completed by confirming that synthetic quartz products can be easily obtained as heat treatment jigs used in the semiconductor industry.
つぎにこの合成石英管およびその製造方法を添付の図面
にもとづいて説明するが、第１図は本発明の合成石英ガ
ラス管の横断面図、第２図はこの合成石英ガラス管の製
造方法の縦断面図を示したものである。Next, this synthetic quartz tube and its manufacturing method will be explained based on the attached drawings. FIG. 1 is a cross-sectional view of the synthetic quartz glass tube of the present invention, and FIG. 2 is a cross-sectional view of the synthetic quartz glass tube of the present invention. It shows a longitudinal cross-sectional view.
本発明の合成石英ガラス管は第１図に示したように泡の
ない合成石英ガラス層１．２の間に微細な泡を多数包含
する石英層３を介在させたものであるが、このものは泡
を含有する石英層における多数の泡がハニカム形状、ト
ラス形状となるので機械的強度の大きい、したがって熱
的変形のし難いものになるという有利性をもつものにな
る。As shown in FIG. 1, the synthetic quartz glass tube of the present invention has a quartz layer 3 containing many fine bubbles interposed between the bubble-free synthetic quartz glass layers 1 and 2. Since a large number of bubbles in the quartz layer containing bubbles form a honeycomb shape or a truss shape, the quartz layer has the advantage of having high mechanical strength and therefore being difficult to thermally deform.
この抱を含有する石英層はそれが管壁の厚さの１０％以
下では高温状態での熱的耐変形の向上が不充分なものと
なり、９０％以上とするとこの泡が管壁表面にも浮ぶよ
うになって管表面の平滑性が乱されるので１０〜９０％
の範囲のものとすることがよい。また、この泡の大きさ
は泡の直径が１０〜１，０００μｓの範囲であれば熱時
強度の向上が得られるのでこの範囲とすればよいが、石
英ガラス管全体の強度の均一性からは泡の径の分布が狭
いほうがよいので５０〜５００即の範囲とすることがよ
い。また、この泡についてはその泡密度によって熱的強
度の改善効果が異なり、ガラス層体積１ｄ当り１，００
０個以下ではこの改善効果が小さくなるのでｌａｇ当り
１，０００個以上、好ましくは５，０００個以上とする
ことがよいゆこの合成石英ガラス管の製造は例えば第２
図に示したように泡のない合成石英１１および１２から
なる２重の石英ガラス管の空隙部１３に合成石英粉末１
４を充填し、これを電気または火炎を熱源１５とする加
熱炉１６中に導入して加熱溶融し、延伸一体化して合成
石英ガラス管１７を得るようにすればよい。この泡のな
い２重管状の合成石英ガラス管は公知の方法で得た管径
の相違する２本の合成石英ガラス管状体を合体すること
によって作ればよいが、この空隙部１３に充填される合
成石英粉末も充分高純度のものとすることから、合成石
英管または棒を機械的粉砕により得たものとすることが
よい、しかし、この合成石英粉末は本発明の合成石英ガ
ラス管における泡の直径、泡密度が上記したように直径
１０〜１，０００ｍ、密度１ａ＋＋当り１，０００個以
上のものとすることが必要とされることがら粒径が１〜
１，５００Ａｔｍの範囲、好ましくは２０〜１ ＋ Ｏ
ＯＯａｍの範囲のものとすることがよい。また、この合
成石英粉末の空隙部１３への充填はこれを加熱溶融、延
伸一体化させたときにこの合成石英ガラス管中の泡の直
径、泡密度を上記の範囲のものとすることが必要とされ
ることから、できるだけ細密に充填することが必要とさ
れるので、この充填に当ってはバイブレータ−などによ
る振動充填を行なうことがよいが、この合成石英粉末に
ついては加熱溶融、延伸一体化後の合成石英ガラス管中
における泡直径を均一なものとし、さらにその均等分布
が特に要望される場合は充填する前に火炎処理などを施
してその形状をできるだけ球状のものとしておくことが
よＵ）。If the quartz layer containing this foam is less than 10% of the thickness of the tube wall, the improvement in thermal deformation resistance at high temperatures will be insufficient; if it is more than 90%, the bubbles will also form on the tube wall surface. 10 to 90% because it floats and disturbs the smoothness of the tube surface.
It is recommended that it be within the range of . In addition, the size of the bubbles should be within the range of 10 to 1,000 μs because the strength under heat can be improved, but from the viewpoint of the uniformity of the strength of the entire quartz glass tube, Since it is better to have a narrow bubble diameter distribution, it is preferable to set it in the range of 50 to 500. In addition, the thermal strength improvement effect of this foam differs depending on the foam density, and the thermal strength improvement effect is 1,000 per 1 d of glass layer volume.
If the number of pieces is less than 0, this improvement effect will be small, so it is recommended that the number of pieces per lag be 1,000 or more, preferably 5,000 or more.
As shown in the figure, synthetic quartz powder 1 is placed in the cavity 13 of a double quartz glass tube made of bubble-free synthetic quartz 11 and 12.
4, introduced into a heating furnace 16 using electricity or flame as a heat source 15, heated and melted, and stretched and integrated to obtain a synthetic quartz glass tube 17. This bubble-free double-tubular synthetic quartz glass tube can be made by combining two synthetic quartz glass tubular bodies with different tube diameters obtained by a known method. Since the synthetic quartz powder should also be of sufficiently high purity, it is preferable to use synthetic quartz tubes or rods obtained by mechanical crushing. As mentioned above, the diameter and bubble density are required to be 10 to 1,000 m in diameter and 1,000 or more bubbles per density 1a++.
In the range of 1,500 Atm, preferably 20-1 + O
It is preferable to set it in the range of OOam. In addition, when filling the void 13 with this synthetic quartz powder, it is necessary to make the bubble diameter and bubble density in the synthetic quartz glass tube within the above range when the synthetic quartz powder is heated, melted, drawn and integrated. Therefore, it is necessary to fill the powder as finely as possible, so it is better to perform vibration filling using a vibrator. If the diameter of the bubbles in the synthetic quartz glass tube is to be made uniform, and even distribution is particularly desired, it is recommended to perform flame treatment before filling to make the shape as spherical as possible. ).
合成石英粉末を細密充填した合成石英ガラスニ重管は加
熱溶融、延伸一体化によって目的とする泡層を有する合
成石英ガラス管とされるのであるが、この加熱溶融は電
気または火炎を熱源とする加熱炉中で１，５００〜２，
３００℃の範囲で行なわせればよく、この延伸一体化は
目的とする合成石英ガラス管の直径、管壁の厚さに合わ
せて任意の速度、大きさで延伸するようにすればよい。Synthetic quartz glass double tubes that are densely packed with synthetic quartz powder are heated and melted, and stretched and integrated to form synthetic quartz glass tubes with the desired foam layer. 1,500-2,
The stretching may be carried out at a temperature of 300° C., and the stretching may be carried out at any speed and size depending on the diameter of the desired synthetic quartz glass tube and the thickness of the tube wall.
このようにして得られた合成石英ガラス管は合成石英ガ
ラス２重管がその中間に充填された合成石英粉末と共に
溶融され、この合成石英粉末相互の間に存在していた空
気がそのま＼残存してこれが気泡として残留するので中
間に多数の気泡を含有するものとなるが、この気泡が壁
構造上ハニカム形状またはトラス形状のものとなるので
、この合成°石英ガラス管は機械的強度の大きいものと
なり、したがって高温状態での熱的変形にも耐えるもの
になるし、このものは純度の高い合成石英で作られてい
て不純物も極めて少ないので特に半導体工業における熱
処理治具として有用とされる。In the synthetic quartz glass tube obtained in this way, the synthetic quartz glass double tube is melted together with the synthetic quartz powder filled in the middle, and the air that existed between the synthetic quartz powder remains as it is. This remains as air bubbles, which contain many air bubbles in the middle, but because these air bubbles have a honeycomb or truss shape due to the wall structure, this synthetic quartz glass tube has high mechanical strength. Therefore, it can withstand thermal deformation at high temperatures, and since it is made of highly pure synthetic quartz and has extremely few impurities, it is particularly useful as a heat treatment jig in the semiconductor industry.
つぎに本発明の実施例をあげる。Next, examples of the present invention will be given.
実施例
外径１５０Ｉ、内径１３０ｍ（７）外管と外径８゜■、
内径６０ｍ＋ａの内管とからなる長さ１，５００ｍの合
成石英ガラス２重管の外管と内管との間隙に、平均粒径
８００ｕＭのもの７５％、１５０１のもの２０％、３０
μｍのもの５％の割合からなる合成石英粉末を細密充填
したのち、これを１，９００℃に加熱している電気加熱
炉内に装入して、これを炉外から引延し、延伸して外径
１１０ａａ、内径１０３ｍｍ、肉厚３．５ｍの合成石英
ガラス管を作ったところ、このものは微細な泡層が管の
中央部に管の厚さ方向で管壁の５３％を占めているもの
であり、泡の大きさが約５μｒ１〜５００１、平均２５
μｍ、泡密度が１０，０００個／ａＩ？（７）モ（７）
１？アった。Exception diameter 150I, inner diameter 130m (7) outer tube and outer diameter 8゜■,
In the gap between the outer tube and the inner tube of a synthetic quartz glass double tube with a length of 1,500 m consisting of an inner tube with an inner diameter of 60 m+a, 75% of particles with an average particle size of 800 uM, 20% of particles of 1501, and 30
After finely packing synthetic quartz powder with a proportion of 5% μm, it is charged into an electric heating furnace heated to 1,900°C, and drawn from outside the furnace. When a synthetic quartz glass tube with an outer diameter of 110 aa, an inner diameter of 103 mm, and a wall thickness of 3.5 m was made using The size of the bubbles is about 5μr1~5001, average 25μr.
μm, bubble density 10,000/aI? (7) Mo (7)
1? It happened.
また、上記における合成石英ガラスの二重管の肉厚を変
更してその間隙を変えたほかは上記と同様に処理したと
ころ、泡層の厚さが管壁の３５％、７５％を占める合成
石英ガラス管が得られた。In addition, when the same process as above was performed except that the wall thickness of the synthetic quartz glass double tube was changed and the gap between them was changed, the foam layer thickness accounted for 35% and 75% of the tube wall. A quartz glass tube was obtained.
つぎに比較のために同一寸法（外径１１０ｍｍ、内径１
０３ｎｎ）の微細泡層を全く含有しない合成石英ガラス
管と天然石英ガラス管を準備し、上記で得た３種の合成
石英ガラス管と共にその化学分析を行なってその不純物
を測定したところ、第１表に示したとおりの結果が得ら
れたが、ついでこれらから外径１１０＋ｎｍ、内径１０
３＋＋ｍ、肉厚３．５ｍ、長さ３０ｍの試験用試片を切
り出し、５％ＨＦ液で３０分間洗浄し、これらを１，２
８０℃の加熱炉中に１８時間保持したときのつぶれ量を
試験片の縦横径比（ＯＤ ｍａｘ Ｘ ＯＤ ｍａｉｎ
）で求めたところ第２表に示したとおりの結果が得られ
、本発明品は従来の合成石英ガラス管にくらべて純度は
同等であっても熱的強度は著しく向上しており、泡層の
厚さが管壁の７５％のものは天然石英ガラスとほとんど
類似した熱的強度を示すことが確認された。Next, for comparison, the same dimensions (outer diameter 110 mm, inner diameter 1
Synthetic quartz glass tubes and natural quartz glass tubes containing no microbubble layer (03nn) were prepared, and chemical analysis was performed on them along with the three types of synthetic quartz glass tubes obtained above to measure their impurities. The results shown in the table were obtained, but from these results the outer diameter was 110+nm and the inner diameter was 10 nm.
Test specimens of 3++ m, wall thickness 3.5 m, and length 30 m were cut out and washed with 5% HF solution for 30 minutes.
The amount of crushing when kept in a heating furnace at 80°C for 18 hours is determined by the length/width diameter ratio (OD max x OD main
), the results shown in Table 2 were obtained, and the product of the present invention has significantly improved thermal strength compared to conventional synthetic quartz glass tubes even though the purity is the same. It was confirmed that glass whose thickness is 75% of the tube wall exhibits thermal strength almost similar to that of natural quartz glass.
なお、泡層の厚さが管壁の５３％である上記で得た合成
石英ガラス管についてはその泡密度が相違する２種のも
のを作り、これらのつぶれ量を測定したところ、第３表
に示したとおりの結果が得られ、泡密度の高いほうが熱
的強度の大きいことが確認された。Regarding the synthetic quartz glass tube obtained above, in which the foam layer thickness is 53% of the tube wall, two types of tubes with different bubble densities were made, and the amount of collapse was measured, as shown in Table 3. The results shown in Figure 2 were obtained, and it was confirmed that the higher the foam density, the higher the thermal strength.
第 １ 表 （化学分析値）
第 ２ 表 （加熱処理による管のつぶれ量）第３
表 （加熱処理による管のつぶれ量）Table 1 (Chemical analysis values) Table 2 (Amount of tube collapse due to heat treatment) Table 3
Table (Amount of tube collapse due to heat treatment)
第１図は本発明の合成石英ガラス管の横断面図、第２図
はこの合成石英ガラス管の製造方法の縦断面図を示した
ものである。
１．２．１１．１２・・・合成石英ガラス層３・・・泡
含有石英層、 １３・・・空隙部、１４・・・合成石英
粉末、 １５・・・熱源、１６・・・電気炉、 ′１７
・・・合成石英ガラス管、（Ｓ（／ムシ〆
−ど〕
ψ Ω
７ 。FIG. 1 is a cross-sectional view of the synthetic quartz glass tube of the present invention, and FIG. 2 is a longitudinal cross-sectional view of the method for manufacturing the synthetic quartz glass tube. 1.2.11.12...Synthetic quartz glass layer 3...Bubble-containing quartz layer, 13...Void portion, 14...Synthetic quartz powder, 15...Heat source, 16...Electric furnace , '17
...Synthetic quartz glass tube, (S(/mushi〆-do) ψ Ω 7.
Claims (1)
細な泡を多数包含する石英層を設けて三層構造としてな
ることを特徴とする合成石英ガラス管。 ２、微細な泡を多数包含する石英層の厚さが管の厚さ方
向で１０〜９０％である特許請求の範囲第１項記載の合
成石英ガラス管。 ３、微細な泡は直径が１〜１，０００μｍのもので、こ
れがガラス層体積１ｃｍ＾３当り１，０００個以上含有
されている特許請求の範囲第１項記載の合成石英ガラス
管。 ４、二重管構造とした合成石英管の間隙に合成石英粉末
を充填し加熱溶融して延伸一体化させて実質的に泡を含
まない上下二層の石英層の中間に微細な泡を多数包含す
る石英層を設けてなる三層構造体を得ることを特徴とす
る合成石英ガラス管の製造方法。 ５、細密充填となるよう粒度分布を有する粒径１〜１，
０００μｍの合成石英粉末を充填する特許請求の範囲第
４項記載の合成石英ガラス管の製造方法。 ６、充填する合成石英粉末がほゞ球形のものである特許
請求の範囲第４項記載の合成石英ガラス管の製造方法。[Claims] 1. A synthetic quartz glass tube characterized in that it has a three-layer structure by providing a quartz layer containing many fine bubbles between two upper and lower quartz layers that are substantially free of bubbles. . 2. The synthetic quartz glass tube according to claim 1, wherein the thickness of the quartz layer containing many fine bubbles is 10 to 90% in the thickness direction of the tube. 3. The synthetic quartz glass tube according to claim 1, wherein the fine bubbles have a diameter of 1 to 1,000 μm, and 1,000 or more fine bubbles are contained per 1 cm^3 of glass layer volume. 4. Synthetic quartz powder is filled into the gap between the synthetic quartz tubes with a double-tube structure, heated, melted, and stretched to form a large number of fine bubbles between the upper and lower quartz layers, which are virtually bubble-free. 1. A method for producing a synthetic quartz glass tube, characterized in that a three-layer structure is obtained by providing a containing quartz layer. 5. Particle size 1 to 1, with particle size distribution to ensure close packing.
5. The method for manufacturing a synthetic quartz glass tube according to claim 4, wherein the tube is filled with synthetic quartz powder having a diameter of 0.000 μm. 6. The method for manufacturing a synthetic quartz glass tube according to claim 4, wherein the synthetic quartz powder to be filled has a substantially spherical shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62117835A JPH0657612B2 (en) | 1987-05-14 | 1987-05-14 | Synthetic quartz glass tube and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62117835A JPH0657612B2 (en) | 1987-05-14 | 1987-05-14 | Synthetic quartz glass tube and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63282134A true JPS63282134A (en) | 1988-11-18 |
| JPH0657612B2 JPH0657612B2 (en) | 1994-08-03 |
Family
ID=14721428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62117835A Expired - Lifetime JPH0657612B2 (en) | 1987-05-14 | 1987-05-14 | Synthetic quartz glass tube and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0657612B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1053498A (en) * | 1996-08-07 | 1998-02-24 | Yamagata Shinetsu Sekiei:Kk | Reaction vessel for semiconductor wafer and heat-treating apparatus using the vessel |
| JP2021024750A (en) * | 2019-07-31 | 2021-02-22 | 東ソ−・エスジ−エム株式会社 | Method for manufacturing multilayer structure quartz glass material |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4892410A (en) * | 1972-02-11 | 1973-11-30 | ||
| JPS5950096A (en) * | 1982-09-10 | 1984-03-22 | Toshiba Ceramics Co Ltd | Quartz glass core tube for furnace for semiconductor treatment |
| JPS5968163A (en) * | 1982-10-12 | 1984-04-18 | Toshiba Ceramics Co Ltd | Quartz glass for emission tube |
| JPS628933A (en) * | 1985-07-05 | 1987-01-16 | Canon Inc | Wafer transfer device |
-
1987
- 1987-05-14 JP JP62117835A patent/JPH0657612B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4892410A (en) * | 1972-02-11 | 1973-11-30 | ||
| JPS5950096A (en) * | 1982-09-10 | 1984-03-22 | Toshiba Ceramics Co Ltd | Quartz glass core tube for furnace for semiconductor treatment |
| JPS5968163A (en) * | 1982-10-12 | 1984-04-18 | Toshiba Ceramics Co Ltd | Quartz glass for emission tube |
| JPS628933A (en) * | 1985-07-05 | 1987-01-16 | Canon Inc | Wafer transfer device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1053498A (en) * | 1996-08-07 | 1998-02-24 | Yamagata Shinetsu Sekiei:Kk | Reaction vessel for semiconductor wafer and heat-treating apparatus using the vessel |
| JP2021024750A (en) * | 2019-07-31 | 2021-02-22 | 東ソ−・エスジ−エム株式会社 | Method for manufacturing multilayer structure quartz glass material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0657612B2 (en) | 1994-08-03 |
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