JPS63279527A - Manufacture of superconductor device - Google Patents
Manufacture of superconductor deviceInfo
- Publication number
- JPS63279527A JPS63279527A JP62114321A JP11432187A JPS63279527A JP S63279527 A JPS63279527 A JP S63279527A JP 62114321 A JP62114321 A JP 62114321A JP 11432187 A JP11432187 A JP 11432187A JP S63279527 A JPS63279527 A JP S63279527A
- Authority
- JP
- Japan
- Prior art keywords
- oxide superconductor
- film
- superconductor
- substrate
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 239000011248 coating agent Substances 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims abstract description 18
- 150000003839 salts Chemical class 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910002651 NO3 Inorganic materials 0.000 claims description 3
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 2
- 229910052765 Lutetium Inorganic materials 0.000 claims description 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052691 Erbium Inorganic materials 0.000 claims 1
- 229910052775 Thulium Inorganic materials 0.000 claims 1
- 125000005843 halogen group Chemical group 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 claims 1
- 239000000243 solution Substances 0.000 abstract description 12
- 239000000203 mixture Substances 0.000 abstract description 10
- 238000001816 cooling Methods 0.000 abstract description 6
- 239000007864 aqueous solution Substances 0.000 abstract description 3
- 239000003973 paint Substances 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- 206010040844 Skin exfoliation Diseases 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 210000003516 pericardium Anatomy 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、ペロブスカイト型の酸化物超電導体被膜を用
いた超半導体装置の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a method for manufacturing a supersemiconductor device using a perovskite-type oxide superconductor film.
（従来の技術）
近年、Ｂａ−Ｌａ−Ｃｕ−０系の層状ペロブスカイト型
の酸化物が高い臨界温度を有する可能性のあることが発
表されて以来、各所で酸化物超電導体の研究が行われて
いる（２．Ｐｈｙｓ、Ｂ Ｃｏｎｄｅｎｓｅｄ Ｍａｔ
ｔｅｒ６４、１８９−１９３（１９８６））、その中で
もＹ−Ｂａ−Ｃｕ−０系で代表される酸素欠陥を有する
欠陥ペロブスカイト型（Ａｈａ２Ｃｕ３ｏ７−、ｆｆｉ
（＾は、Ｙ、 Ｙｂ、 Ｎｏ、 ［ｌｙ、 Ｅｕ。(Prior Art) In recent years, it has been announced that layered perovskite-type oxides based on Ba-La-Cu-0 may have a high critical temperature, and since then, research on oxide superconductors has been carried out in various places. (2. Phys, B Condensed Mat
ter64, 189-193 (1986)), among which defective perovskite types with oxygen defects represented by the Y-Ba-Cu-0 system (Aha2Cu3o7-, ffi
(^ is Y, Yb, No, [ly, Eu.
Ｅｒ、ＴｎおよびＬｕから選ばれた元素、））の酸化物
超電導体は、臨界温度■。が９０に以上と液体窒素以上
の高い温度を示すため非常に有望な材料として注目され
ている（Ｐｈｙｓ、Ｒｅｖ、Ｌｅｔｔ、ｖｏｌ、 ５８
Ｎｏ、９゜９０８−９１０） 。The oxide superconductor of elements selected from Er, Tn and Lu) has a critical temperature ■. It is attracting attention as a very promising material because it shows a high temperature of over 90, higher than liquid nitrogen (Phys, Rev. Lett, vol. 58).
No, 9°908-910).
このような酸化物超電導体を、例えば導線として使用す
る場合には、金属管に封入して線材化したり、基板上に
被膜をパターン状に形成して使用することが考えられる
。When such an oxide superconductor is used as a conducting wire, for example, it may be sealed in a metal tube to form a wire, or it may be used by forming a film on a substrate in a pattern.
（発明が解決しようとする問題点）
ところで、上述した酸化物超電導体の使用方法のうち、
後者の基板上に酸化物超電導体からなる被膜を形成して
使用する場合には、蒸着法やスパッタリング法により被
膜を形成することが考えられるが真空装置等の特別の装
置を心嚢とし、製造コストが高くなるという難点がある
。(Problems to be solved by the invention) By the way, among the methods of using the oxide superconductor mentioned above,
In the case of forming and using a film made of an oxide superconductor on the latter substrate, it is possible to form the film by vapor deposition or sputtering, but it is also possible to use a special device such as a vacuum device as a pericardium to manufacture the film. The disadvantage is that the cost is high.
また、前述した酸化物超電導体は、線膨脹係数が１６Ｘ
１０−’ ／にと、通常の金属のそれに比べて１桁程
度大きいため、臨界温度までの冷熱サイクルを繰り返し
な場合、基板上から剥離してしまうおそれがあり、密着
性に乏しいという難点もある。Furthermore, the aforementioned oxide superconductor has a linear expansion coefficient of 16X.
10-'/, which is about an order of magnitude larger than that of ordinary metals, so there is a risk of it peeling off from the substrate if the cooling and heating cycles up to the critical temperature are repeated, and there is also the problem of poor adhesion. .
本発明はこのような従来の難点を解消すべくなされたも
ので、基板上へのペロブスカイト型酸化物超電導体被膜
の形成が容易で、かつ得られる被膜の膜厚および組成が
均一で、冷熱サイクルによっても被膜剥離のおそれのな
い超半導体装置を製造する方法を提供することを目的と
する。The present invention has been made to solve these conventional difficulties, and it is easy to form a perovskite-type oxide superconductor film on a substrate, the resulting film has a uniform thickness and composition, and can be easily cycled through cooling and heating. It is an object of the present invention to provide a method for manufacturing a super semiconductor device without fear of film peeling.
［発明の構成］
（問題点を解決するための手段）
本発明の超半導体装置の製造方法は、基板上にペロブス
カイト型の酸化物超電導体の被膜を形成してなる超半導
体装置を製造するにあたり、前記酸化物超電導体の被膜
を、この酸化物超電導体を構成する各元素の金属塩を所
定の比率で含有する水溶液または有機溶液を前記基板上
に塗布し、この塗膜を加熱することにより前記各元素の
金属塩を熱分解し、次いで酸素含有雰囲気中で７００℃
〜１０００℃の温度で熱処理することにより形成するこ
とを特徴としている。[Structure of the Invention] (Means for Solving the Problems) The method for manufacturing a super-semiconductor device of the present invention includes steps for manufacturing a super-semiconductor device in which a film of a perovskite-type oxide superconductor is formed on a substrate. , by applying a coating of the oxide superconductor on the substrate with an aqueous solution or an organic solution containing metal salts of each element constituting the oxide superconductor in a predetermined ratio, and heating the coating. The metal salts of each of the above elements are thermally decomposed and then heated at 700°C in an oxygen-containing atmosphere.
It is characterized by being formed by heat treatment at a temperature of ~1000°C.
本発明における酸化物超電導体は、希土類元素を含有し
ペロブスカイト型構造を有する酸化物超電導体であって
、超電導状態を実現できればよく、ＡＢａ Ｃｕ
Ｏ系（δは酸素欠陥を表し通常１２３７−δ
以下、＾は、’／、 Ｗｂ、 Ｈｏ、 Ｄｙ、 Ｅｕ、
Ｅｒ、 Ｔｉ、 Ｌｕ ； Ｂａの一部はＳ「等で置
換可能）等の酸素欠陥を有する欠陥ペロブスカイト型、
５ｒ−Ｌａ−Ｃｕ−Ｑ系等の層状ペロブスカイト型等の
広義にペロブスカイト構造を有する酸化物とする。また
希土類元素も広義の定義とし、Ｓｃ、Ｙおよびランタン
系を含むものとする０代表的な系としてＹ−Ｂａ−Ｃｕ
−０系のほかに、５ｃ−Ｂａ−Ｃｕ−０系、５ｒ−Ｌａ
−Ｃｕ−０系、さらにＳ「をＢａ、Ｃａで置換した糸環
が挙げられる。ペロブスカイト型酸化物超電導体を構成
する元素は、基本的に化学量論比の組成となるように混
合するが、多少製造条件等との関係等でずれていても構
わない０例えばＹ−Ｂａ−Ｃｕ−０系ではＹ １１０１
に対しＢａ ２ｉｏ１ 、Ｃｕ ３ｎｏｌが標準組成で
あるが、実用上はＹ Ｏ，６〜１．４ ｎｏｔ％、Ｂａ
１．５〜３．Ｏｌｏ１％、Ｃｕ ２．０〜４．Ｏｎｏｔ
％程度のずれは問題ない。The oxide superconductor in the present invention only needs to be an oxide superconductor containing a rare earth element and having a perovskite structure, and can realize a superconducting state.
O-based (δ represents oxygen defect, usually less than 1237-δ, ^ is '/, Wb, Ho, Dy, Eu,
Defect perovskite type with oxygen defects such as Er, Ti, Lu; a part of Ba can be replaced with S (etc.);
The oxide is an oxide having a perovskite structure in a broad sense, such as a layered perovskite type such as a 5r-La-Cu-Q system. Rare earth elements are also broadly defined to include Sc, Y, and lanthanum. A representative system is Y-Ba-Cu.
-0 series, 5c-Ba-Cu-0 series, 5r-La
Examples include -Cu-0 series, and also thread rings in which S is replaced with Ba or Ca.The elements constituting the perovskite oxide superconductor are basically mixed in a stoichiometric composition. , it doesn't matter if it deviates slightly due to manufacturing conditions etc. For example, in the Y-Ba-Cu-0 system, Y 1101
The standard composition is Ba 2io1 and Cu 3nol, but in practice, Y O, 6-1.4 not%, Ba
1.5-3. Olo1%, Cu 2.0-4. Onot
A deviation of about % is not a problem.
本発明の超半導体装置の製造方法についてさらに詳述す
ると、まず上述した酸化物超電導体を構成する各元素の
金属塩を所定の比率で含有する水溶液または有機溶液を
作製する。この溶液に使用する金属塩としては、容易に
熱分解可能なハロゲン化物や硝酸塩等が好ましい、この
溶液は、例えばＹ−Ｂａ−Ｃｕ−０系の酸化物超電導体
であれば、これらの元素を含む各金属塩をこれらの元素
量として前述した一般式に対して化学量論比の組成とな
るように水またはアルコールのような有機溶剤に溶解す
ることにより得られる。なお、上記の各金属塩の混合比
は、多少製造条件等との関係で変えることもでき、例え
ばＹ−Ｂａ−Ｃｕ−０系では、Ｙ ｌｌ１ｏｌに対して
Ｂａ２ｎ＋ｏ ｌ、Ｃｕ３１ｏ ｌが標準組成であるが
、実用上はＹを基準として他の成分が±３Ｏ％程度ずれ
ても問題は生じない。To explain in more detail the method for manufacturing a supersemiconductor device of the present invention, first, an aqueous solution or an organic solution containing metal salts of each element constituting the above-mentioned oxide superconductor in a predetermined ratio is prepared. The metal salt used in this solution is preferably a halide or nitrate that can be easily thermally decomposed. It is obtained by dissolving each of the metal salts contained in an organic solvent such as water or alcohol so that the amount of these elements becomes a stoichiometric composition based on the general formula described above. The mixing ratio of each of the metal salts mentioned above can be changed somewhat depending on the manufacturing conditions, etc. For example, in the Y-Ba-Cu-0 system, the standard composition is Ba2n+ol and Cu31ol for Yll1ol. However, in practice, there is no problem even if other components deviate by about ±30% with Y as a reference.
次いで、このようにして作製した各金属塩を含む溶液を
基板上に塗布する。この基板としては、面方向の線膨脹
係数が５Ｘ １０−’ ／に〜２５Ｘ １０−’ ／に
のものが好ましい。基板の面方向の線膨脹係数が５ＸＩ
Ｏ−６／Ｋ〜２５ｘ １０−’ ／にの範囲外になると
酸化物超電導体との線１ｌｉ７Ｊ脹係数の差が大きくな
りすぎ、被膜が基板から剥離し易くなる。このような基
板の素材としては、例えば次のようなものがあげられる
。Next, a solution containing each of the metal salts prepared in this manner is applied onto the substrate. This substrate preferably has a coefficient of linear expansion in the plane direction of 5X 10-'/ to 25X 10-'/. The coefficient of linear expansion in the plane direction of the substrate is 5XI
If it is outside the range of O-6/K to 25x 10-'/, the difference in linear 1li7J expansion coefficient with the oxide superconductor becomes too large, making it easy for the film to peel off from the substrate. Examples of materials for such a substrate include the following:
（基板） （線膨脹係数）
ＬｉＮｂＯｌ １５．４ｘ １Ｇ−’ ／
ＫＬｉＴａ０３ １６． ＩＸ １Ｏ−Ｇ７
７２ｒ０ ２ ８ｘ
１ｏ−ｓ ｕＡＩ２０３ ８ｘ １
０−’ Ｊ／＾（１１９，３Ｘ １０−’ ／Ｋ
Ｐｄ １２×１Ｏ−ＳＩ）
次に、このようにして形成した被膜を加熱することによ
り熱分解し、酸化物超電導体を構成する各元素の酸化物
を形成する。この熱分解は、例えば被膜を形成した基板
をホットプレートのような間接加熱器上で加熱すること
により行える。また、予め所定の温度に加熱した基板上
に前述した各元素の金属塩を含む溶液を直接塗布するこ
とによっても同様に行える。(Substrate) (Linear expansion coefficient) LiNbOl 15.4x 1G-' /
KLiTa03 16. IX 1O-G7
72r0 2 8x
1os uAI203 8x 1
0-' J/^(119,3X 10-' /KPd 12×1O-SI)
Next, the film thus formed is thermally decomposed by heating to form oxides of each element constituting the oxide superconductor. This thermal decomposition can be carried out, for example, by heating the coated substrate on an indirect heater such as a hot plate. Alternatively, the same method can be performed by directly applying a solution containing the metal salts of the aforementioned elements onto a substrate that has been heated to a predetermined temperature in advance.
そして、前述した各元素の金属塩を含む溶液の塗布と熱
分解を繰返し行い所望の膜厚にする。Then, the coating and thermal decomposition of the solution containing the metal salts of each element described above are repeated to obtain a desired film thickness.
この後、１００℃〜１０００℃の酸素含有雰囲気中で熱
処理することにより酸化物超電導体を構成する各元素の
酸化物の混在した被膜を結晶化させ、酸化物超電導体の
被膜を得る。Thereafter, heat treatment is performed in an oxygen-containing atmosphere at 100° C. to 1000° C. to crystallize the film in which oxides of various elements constituting the oxide superconductor are mixed, thereby obtaining a film of the oxide superconductor.
この酸化物超電導体の被膜の厚さは、１００人〜ｌＸ１
０６人の範囲が好ましく、被膜の厚さが１００人未満で
あると磁場浸透により所定の超電導特性が得られなくな
り、また１×１０６人を越えてもそれ以上の超電導特性
の向上が得られなくなる上に、脆くなり基板から剥離し
たり、クラックが生じ易くなる。The thickness of the film of this oxide superconductor is 100 to 1×1
A range of 0.06 people is preferable; if the thickness of the coating is less than 100 people, it will not be possible to obtain the desired superconducting properties due to magnetic field penetration, and if it exceeds 1 x 106 people, no further improvement in superconducting properties will be obtained. Moreover, it becomes brittle and easily peels off from the substrate or cracks occur.
（作 用）
本発明の超半導体装置の製造方法では、ペロブスカイト
型の酸化物超電導体を構成する各元素の金属塩を所定の
比率で含有する溶液の塗布、焼成により酸化物超電導体
の被膜を形成しているので、容易に膜厚および組成の均
一な被膜を形成することができる。また、面方向の線膨
脹係数が５Ｘ１０−６／Ｋ〜２５Ｘ１０−６／Ｋの基板
を使用することにより、得られる酸化物超電導体被膜と
の線膨脹係数が近似し、これにより基板と被膜との接合
界面の冷熱サイクルによるストレスが小さくなり、密着
性に優れたものとなる。(Function) In the method for manufacturing a super-semiconductor device of the present invention, a film of an oxide superconductor is formed by coating and baking a solution containing metal salts of each element constituting a perovskite-type oxide superconductor in a predetermined ratio. Therefore, a film having a uniform thickness and composition can be easily formed. In addition, by using a substrate with a linear expansion coefficient of 5X10-6/K to 25X10-6/K in the planar direction, the linear expansion coefficients of the obtained oxide superconductor coating become similar, and this makes it possible for the substrate and the coating to The stress caused by cooling and heating cycles at the bonding interface is reduced, resulting in excellent adhesion.
（実施例） 次に、本発明の実施例について説明する。(Example) Next, examples of the present invention will be described.
実施例
まずＹ（ＮＯ３） ｚ ・６ｔｈ Ｏ粉末、Ｂａ （Ｎ
Ｏ３） ２粉末およびＣｕ （ＮＯｉ ） ２ ・３ｔ
１２０粉末を、Ｙ：Ｂａ：ＣＩＪ＝１：２：３のモル比
となるように混合し、この混合粉を水中に溶解させる。Example First, Y(NO3) z ・6th O powder, Ba(N
O3) 2 powder and Cu (NOi) 2 ・3t
120 powder is mixed in a molar ratio of Y:Ba:CIJ=1:2:3, and this mixed powder is dissolved in water.
次に、この溶液をスプレー法により肉厚０．１ｎのジル
コニアからなる基板上に塗布し、次いでこの基板をホッ
トプレート上に載置し、約６５０℃の温度で塗膜の熱分
解を行う、そして、結晶化後の被膜の厚さが１ｘｉｏ’
人となるように、この溶液の塗布と熱分解を繰返し行う
。Next, this solution is applied by a spray method onto a substrate made of zirconia with a thickness of 0.1 nm, and then this substrate is placed on a hot plate, and the coating film is thermally decomposed at a temperature of about 650 ° C. The thickness of the film after crystallization is 1xio'
The application and thermal decomposition of this solution are repeated as if it were a human being.
この後、この熱分解による被膜を形成した基板を酸素中
で約９００℃の温度により２４時間熱処理し、一般式
％式％
で示されるペロプスカイト型の酸化物超電導体からなる
被膜を有する超半導体装置を得た。Thereafter, the substrate on which the film was formed by thermal decomposition was heat-treated in oxygen at a temperature of about 900°C for 24 hours, and a superconductor having a film made of a perovskite-type oxide superconductor represented by the general formula % Got the device.
このようにして得た超半導体装置の超電導特性を測定し
たところ、臨界温度は９０にであった。When the superconducting properties of the supersemiconductor device thus obtained were measured, the critical temperature was found to be 90°C.
次に、この超半導体装置を超電導体被膜の形成されてい
る面を外側にして曲率半径３Ｏ Ｇ Ｏｎに曲げ被膜に
ストレスを加えた状態で、液体窒素中への浸漬と常温へ
の復帰の冷熱サイクルを１０回加えたが、超電導体被膜
面にクラックの発生は認められなかった。Next, this super-semiconductor device was bent with the surface on which the superconductor coating was formed outward to a radius of curvature of 3O G On, and with stress applied to the coating, it was immersed in liquid nitrogen and cooled to return to room temperature. Although the cycle was applied 10 times, no cracks were observed on the superconductor coating surface.
［発明の効果］
以上の実施例からも明らかなように、本発明の超半導体
装置の製造方法によれば、ペロブスカイト型の酸化物超
電導体を構成する各元素の金属塩を所定の比率で含有す
る溶液の塗布、焼成により被膜を形成しているので、容
易に膜厚および組成の均一な酸化物超電導体被膜を有す
る超半導体装置が得られる。[Effects of the Invention] As is clear from the above examples, according to the method for manufacturing a supersemiconductor device of the present invention, metal salts of each element constituting a perovskite-type oxide superconductor are contained in a predetermined ratio. Since the coating is formed by coating and baking a solution, a supersemiconductor device having an oxide superconductor coating with uniform thickness and composition can be easily obtained.
また、基板として面方向の線膨脹係数が５×１０−６／
Ｋ〜２５Ｘ １０−’ ／にの素材を使用することによ
り、得られる酸化物超電導体被膜との線膨脹係数が近似
し、これにより基板と被膜との接合界面の冷熱サイクル
によるひずみの発生が小さく、剥離やクラックの発生の
おそれがなく、長期にわたって良好な特性を維持するこ
とができる超半導体装置が得られる。In addition, the linear expansion coefficient in the plane direction of the substrate is 5×10-6/
By using a material of K ~ 25X 10-'/, the coefficient of linear expansion is similar to that of the resulting oxide superconductor coating, which reduces the occurrence of strain due to cooling and heating cycles at the bonding interface between the substrate and the coating. , a super-semiconductor device that can maintain good characteristics over a long period of time without the risk of peeling or cracking can be obtained.
Claims (1)
膜を形成してなる超電導体装置を製造するにあたり、 前記酸化物超電導体の被膜を、この酸化物超電導体を構
成する各元素の金属塩を所定の比率で含有する水溶液ま
たは有機溶液を前記基板上に塗布し、この塗膜を加熱す
ることにより前記各元素の金属塩を熱分解し、次いで酸
素含有雰囲気中で７００℃〜１０００℃の温度で熱処理
することにより形成することを特徴とする超半導体装置
の製造方法。 （２）前記酸化物超電導体は、希土類元素を含有するペ
ロブスカイト型の酸化物超電導体であることを特徴とす
る特許請求の範囲第１項記載の超半導体装置の製造方法
。 （３）前記酸化物超電導体は、ＡＢａ＿２Ｃｕ＿３Ｏ＿
７＿−＿δ系の酸化物超電導体（Ａは、Ｙ、Ｙｂ、Ｈｏ
、Ｄｙ、Ｅｕ、Ｅｒ、Ｔｍ、およびＬｕから選ばれた元
素。）であることを特徴とする特許請求の範囲第１項ま
たは第２項記載の超電導体装置の製造方法。（４）前記
酸化物超電導体は、Ｙ−Ｂａ−Ｃｕ−Ｏ系であることを
特徴とする特許請求の範囲第３項記載の超電導体装置の
製造方法。 （５）前記基板の面方向の線膨脹係数が、５×１０＾−
＾６／Ｋ〜２５×１０＾−＾６／Ｋであることを特徴と
する特許請求の範囲第１項ないし第４項のいずれか１項
記載の超電導体装置の製造方法。 （６）前記基板が、ＬｉＮｂ０＿３、ＬｉＴａ０＿３、
ジルコニア、安定化ジルコニア、Ａｇ、Ａｌ＿２Ｏ＿３
およびＰｄから選ばれたものからなることを特徴とする
特許請求の範囲第５項記載の超電導体装置の製造方法。 （７）前記酸化物超電導体を構成する各元素の金属塩が
、ハロゲン化物または硝酸塩であることを特徴とする特
許請求の範囲第１項ないし第６項のいずれか１項記載の
超電導体装置の製造方法。[Claims] (1) In manufacturing a superconductor device formed by forming a film of a perovskite-type oxide superconductor on a substrate, the film of the oxide superconductor constitutes the oxide superconductor. An aqueous or organic solution containing metal salts of each element in a predetermined ratio is applied onto the substrate, the coating film is heated to thermally decompose the metal salts of each element, and then the metal salts of each element are thermally decomposed in an oxygen-containing atmosphere. A method for manufacturing a super semiconductor device, characterized in that it is formed by heat treatment at a temperature of 700°C to 1000°C. (2) The method for manufacturing a supersemiconductor device according to claim 1, wherein the oxide superconductor is a perovskite-type oxide superconductor containing a rare earth element. (3) The oxide superconductor is ABa_2Cu_3O_
7_-_δ-based oxide superconductor (A is Y, Yb, Ho
, Dy, Eu, Er, Tm, and Lu. ) A method for manufacturing a superconductor device according to claim 1 or 2, characterized in that: (4) The method for manufacturing a superconductor device according to claim 3, wherein the oxide superconductor is Y-Ba-Cu-O based. (5) The coefficient of linear expansion in the plane direction of the substrate is 5×10^-
The method for manufacturing a superconductor device according to any one of claims 1 to 4, characterized in that ^6/K to 25x10^-^6/K. (6) The substrate is LiNb0_3, LiTa0_3,
Zirconia, stabilized zirconia, Ag, Al_2O_3
6. The method for manufacturing a superconductor device according to claim 5, wherein the superconductor device is made of a material selected from Pd and Pd. (7) The superconductor device according to any one of claims 1 to 6, wherein the metal salt of each element constituting the oxide superconductor is a halide or a nitrate. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62114321A JPS63279527A (en) | 1987-05-11 | 1987-05-11 | Manufacture of superconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62114321A JPS63279527A (en) | 1987-05-11 | 1987-05-11 | Manufacture of superconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63279527A true JPS63279527A (en) | 1988-11-16 |
Family
ID=14634916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62114321A Pending JPS63279527A (en) | 1987-05-11 | 1987-05-11 | Manufacture of superconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63279527A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6410527A (en) * | 1987-07-02 | 1989-01-13 | Teikoku Kako Co Ltd | Manufacture of superconductive material |
| JPS6410528A (en) * | 1987-07-02 | 1989-01-13 | Teikoku Kako Co Ltd | Manufacture of superconductive film |
| JPS6419783A (en) * | 1987-06-26 | 1989-01-23 | Hewlett Packard Yokogawa | Manufacture of superconductor film |
| JPS6465007A (en) * | 1987-01-30 | 1989-03-10 | Agency Ind Science Techn | Starting material solution for superconductive material |
| JPS6465003A (en) * | 1987-01-30 | 1989-03-10 | Agency Ind Science Techn | Superconductive material and production thereof |
| US4994420A (en) * | 1989-10-12 | 1991-02-19 | Dow Corning Corporation | Method for forming ceramic materials, including superconductors |
| US5786306A (en) * | 1990-06-22 | 1998-07-28 | Massachusetts Institute Of Technology | Synthesis of high TC superconducting coatings and patterns by melt writing and oxidation of metallic precursor alloys |
-
1987
- 1987-05-11 JP JP62114321A patent/JPS63279527A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6465007A (en) * | 1987-01-30 | 1989-03-10 | Agency Ind Science Techn | Starting material solution for superconductive material |
| JPS6465003A (en) * | 1987-01-30 | 1989-03-10 | Agency Ind Science Techn | Superconductive material and production thereof |
| JPH0476324B2 (en) * | 1987-01-30 | 1992-12-03 | Kogyo Gijutsuin | |
| JPH0476323B2 (en) * | 1987-01-30 | 1992-12-03 | Kogyo Gijutsuin | |
| JPS6419783A (en) * | 1987-06-26 | 1989-01-23 | Hewlett Packard Yokogawa | Manufacture of superconductor film |
| JPS6410527A (en) * | 1987-07-02 | 1989-01-13 | Teikoku Kako Co Ltd | Manufacture of superconductive material |
| JPS6410528A (en) * | 1987-07-02 | 1989-01-13 | Teikoku Kako Co Ltd | Manufacture of superconductive film |
| US4994420A (en) * | 1989-10-12 | 1991-02-19 | Dow Corning Corporation | Method for forming ceramic materials, including superconductors |
| US5786306A (en) * | 1990-06-22 | 1998-07-28 | Massachusetts Institute Of Technology | Synthesis of high TC superconducting coatings and patterns by melt writing and oxidation of metallic precursor alloys |
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