JPS63279151A - Carbon monoxide sensor - Google Patents
Carbon monoxide sensorInfo
- Publication number
- JPS63279151A JPS63279151A JP11399987A JP11399987A JPS63279151A JP S63279151 A JPS63279151 A JP S63279151A JP 11399987 A JP11399987 A JP 11399987A JP 11399987 A JP11399987 A JP 11399987A JP S63279151 A JPS63279151 A JP S63279151A
- Authority
- JP
- Japan
- Prior art keywords
- carbon monoxide
- catalyst
- semiconductor
- sensor body
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 229910002091 carbon monoxide Inorganic materials 0.000 title claims abstract description 39
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 239000003054 catalyst Substances 0.000 claims abstract description 27
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000003647 oxidation Effects 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- UBAZGMLMVVQSCD-UHFFFAOYSA-N carbon dioxide;molecular oxygen Chemical compound O=O.O=C=O UBAZGMLMVVQSCD-UHFFFAOYSA-N 0.000 claims 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 8
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 238000001514 detection method Methods 0.000 abstract description 3
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 abstract description 2
- CVKFXBUVLBFHGO-UHFFFAOYSA-N cobalt 5,10,15,20-tetraphenyl-21,23-dihydroporphyrin Chemical compound [Co].c1cc2nc1c(-c1ccccc1)c1ccc([nH]1)c(-c1ccccc1)c1ccc(n1)c(-c1ccccc1)c1ccc([nH]1)c2-c1ccccc1 CVKFXBUVLBFHGO-UHFFFAOYSA-N 0.000 abstract 2
- IYVLHQRADFNKAU-UHFFFAOYSA-N oxygen(2-);titanium(4+);hydrate Chemical compound O.[O-2].[O-2].[Ti+4] IYVLHQRADFNKAU-UHFFFAOYSA-N 0.000 abstract 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 11
- 229910002092 carbon dioxide Inorganic materials 0.000 description 5
- 239000001569 carbon dioxide Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000003350 kerosene Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- AYEKOFBPNLCAJY-UHFFFAOYSA-O thiamine pyrophosphate Chemical compound CC1=C(CCOP(O)(=O)OP(O)(O)=O)SC=[N+]1CC1=CN=C(C)N=C1N AYEKOFBPNLCAJY-UHFFFAOYSA-O 0.000 description 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は一般家庭の室内、或いは、車室内等の一酸化炭
素を検出する一酸化炭素センサに関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a carbon monoxide sensor that detects carbon monoxide inside a home or a vehicle.
（従来の技術）
従来、第２図に示すように、絶縁体基板１０の上面の中
央に酸化物半導体１１例えばｎ型半導体の酸化スズ（Ｓ
ｎ Ｏ２）を蒸着し、該半導体１１の両側には該半導
体１１に接触する電気抵抗検出用の電極１２ａ、１２ｂ
を固着し、また、該絶縁体基板１０の下面にはヒーター
３と該ヒーター３の両側に位置するヒータ電極１４ａ、
１４ｂをそれぞれ接着′した一酸化炭素センサが知られ
ている。(Prior Art) Conventionally, as shown in FIG. 2, an oxide semiconductor 11 such as an n-type semiconductor, tin oxide (S
electrodes 12a and 12b for detecting electrical resistance are in contact with the semiconductor 11 on both sides of the semiconductor 11.
Further, on the lower surface of the insulating substrate 10, a heater 3 and heater electrodes 14a located on both sides of the heater 3 are provided.
A carbon monoxide sensor in which 14b are bonded to each other is known.
係る一酸化炭素センサによれば、前記ヒータ１３に通電
して前記半導体１１を加熱する。その後、該半導体１１
の表面に酸素（０□）が接し吸着する。このとき
１／２＋２ ｅ ”−０”
となり、吸着０２−はＳｎＯから電子を奪って陰イオン
吸着する。これにより、前記半導体１１内の電子の数が
減少し、高抵抗となる。According to the carbon monoxide sensor, the heater 13 is energized to heat the semiconductor 11. After that, the semiconductor 11
Oxygen (0□) comes into contact with the surface of and is adsorbed. At this time, 1/2+2 e "-0" is obtained, and adsorption 02- takes electrons from SnO and adsorbs anions. This reduces the number of electrons in the semiconductor 11, resulting in high resistance.
また、係る状態で一酸化炭素ガス（Ｃｏ）が前記半導体
１１の表面に接するときは
ＣＯ＋０２−−Ｃｏ ＋２ｅ−
と酸化し、二酸化炭素（ＣＯ２）を発生する。これによ
り、電子（２ｅ−）が半導体１１に戻り、低抵抗となる
。Further, when carbon monoxide gas (Co) comes into contact with the surface of the semiconductor 11 in such a state, it is oxidized to CO+02--Co+2e- and generates carbon dioxide (CO2). As a result, the electrons (2e-) return to the semiconductor 11, resulting in low resistance.
このように、一酸化炭素センサはその雰囲気にＣＯが含
まれているときは低抵抗となって、ＣＯを検出するよう
になっている。In this way, when the atmosphere contains CO, the carbon monoxide sensor has a low resistance and detects CO.
（発明が解決しようとする問題点）
前記従来の一酸化炭素センサでは、前記半導体１１の感
度を向上させるために前記ヒータ１３を取付けることを
要するし、また、該半導体（Ｓｎ０２）１１のみではＣ
Ｏに反応するよりもアルコールに過敏に反応し信頼性に
欠けるという問題点を有していた。(Problems to be Solved by the Invention) In the conventional carbon monoxide sensor, it is necessary to install the heater 13 in order to improve the sensitivity of the semiconductor 11, and the semiconductor (Sn02) 11 alone can reduce the carbon monoxide sensor.
The problem was that it reacted more sensitively to alcohol than to O and lacked reliability.
本発明の目的は、前記従来の問題点に鑑み、一酸化炭素
に選択性のある触媒を付加することにより感度及び信頼
性を向上させた一酸化炭素センサを提供することにある
。SUMMARY OF THE INVENTION In view of the above-mentioned conventional problems, an object of the present invention is to provide a carbon monoxide sensor that has improved sensitivity and reliability by adding a catalyst that is selective to carbon monoxide.
（問題点を解決するための手段）
本発明は前記目的を達成するため、酸化物半導体に電気
抵抗検出用の電極を接続し、酸素が該酸化物半導体に吸
着するときは高抵抗となり、一酸化炭素が該吸着酸素に
より酸化するとき二酸化炭素を発生して低抵抗となる一
酸化炭素センサにおいて、前記酸化物半導体にコバルト
テトラフェニルボルフィリンを担持した水和酸化チタン
からなる一酸化炭素の選択酸化触媒を付加したことを特
徴とする。(Means for Solving the Problems) In order to achieve the above-mentioned object, the present invention connects an electrode for detecting electrical resistance to an oxide semiconductor, and when oxygen is adsorbed to the oxide semiconductor, the resistance becomes high. In a carbon monoxide sensor that generates carbon dioxide and has a low resistance when carbon oxide is oxidized by the adsorbed oxygen, the selective oxidation of carbon monoxide is made of hydrated titanium oxide with cobalt tetraphenylborphyrin supported on the oxide semiconductor. It is characterized by the addition of a catalyst.
（作用）
本発明によれば、酸化物半導体を高温としなくとも、一
酸化炭素の選択性酸化触媒により一酸化炭素と酸化物半
導体の吸着酸素との間で酸化反応が促進され、一酸化炭
素センサの感度及び信頼性が向上する。(Function) According to the present invention, the oxidation reaction between carbon monoxide and oxygen adsorbed on the oxide semiconductor is promoted by the selective oxidation catalyst for carbon monoxide without raising the oxide semiconductor to a high temperature. Sensor sensitivity and reliability are improved.
（実施例）
第１図（ａ）（ｂ）は本発明の第１の実施例を示すもの
で、２０は横長のプリント基板、２１ａ。(Embodiment) FIGS. 1(a) and 1(b) show a first embodiment of the present invention, in which 20 is a horizontally long printed circuit board 21a.
２１ｂは電気抵抗検出用の一対の電極、２２は酸化物半
導体（以下、半導体という）と一酸化炭素の選択性酸化
触媒（以下、触媒という）とを混合したセンサ本体であ
る。21b is a pair of electrodes for detecting electrical resistance, and 22 is a sensor body made of a mixture of an oxide semiconductor (hereinafter referred to as a semiconductor) and a carbon monoxide selective oxidation catalyst (hereinafter referred to as a catalyst).
前記プリント基板２０はその上面に櫛の歯形に形成した
前記各電極２１ａ、２１ｂをそれぞれ所定間隔をおいて
対向して接着し、該各電極２１ａ。The printed circuit board 20 has the electrodes 21a and 21b formed in a comb-tooth shape on the upper surface thereof, which are bonded to face each other at a predetermined interval.
２１ｂの基端を各リード線２３ａ、２３ｂに接続してい
る。また、該プリント基板２０の上面で該各電極２１ａ
、２ｉｂ間には該各電極２１ａ。The base end of 21b is connected to each lead wire 23a, 23b. Further, on the upper surface of the printed circuit board 20, each of the electrodes 21a
, 2ib are each electrode 21a.
２１ｂに接触した前記センサ本体２２を固着している。The sensor main body 22 in contact with the sensor body 21b is fixed.
前記センサ本体２２はその半導体をｎ型半導体の酸化ス
ズ（Ｓ ｎ Ｏ２）にて構成し、該触媒と半導体との混
合比を１重量％：９９重量％から３０重量％ニア０重量
％に設定している。The semiconductor of the sensor body 22 is made of tin oxide (S n O2), which is an n-type semiconductor, and the mixing ratio of the catalyst and the semiconductor is set to 1% by weight: 99% to 30% by weight, near 0% by weight. are doing.
また、前記触媒はコバルトテトラフェニルボルフィリン
Ｃ以下、Ｃｏ−ＴＰＰと称す）錯体を担持した水酸化チ
タンからなり、特開昭６０−３１８２７号に係る一酸化
炭素の高活性触媒を使用し、低温時（−７９℃）におい
てもＣｏの０２による酸化反応が高活性となっているも
のである。尚、係る触媒は次のようにして製造される。The catalyst is made of titanium hydroxide supporting a cobalt tetraphenylborphyrin C (hereinafter referred to as Co-TPP) complex, and uses a highly active carbon monoxide catalyst disclosed in JP-A-60-31827. Even at (-79°C), the oxidation reaction of Co by O2 is highly active. Incidentally, such a catalyst is manufactured as follows.
即ち、Ｃｏ−ＴＰＰ錯体をベンゼン等の溶媒に溶かした
溶液に１７０ｄ／、以上の比表面積を有する水和酸化チ
タンの所定量を添加し充分攪拌したのち、溶媒を減圧留
去することによって、Ｃｏ−ＴＰＰ担持率が１〜３０重
量％、好ましくは３〜１０重量％の水和酸化チタンを調
整する。しかるのちに必要に応じて１５０〜３５０℃（
２００〜３００℃良好）の温度で排気処理をして製造さ
れる。That is, a predetermined amount of hydrated titanium oxide having a specific surface area of 170 d/cm or more is added to a solution of a Co-TPP complex dissolved in a solvent such as benzene, and the mixture is thoroughly stirred, and then the solvent is distilled off under reduced pressure. - Prepare hydrated titanium oxide with a TPP loading of 1 to 30% by weight, preferably 3 to 10% by weight. Then, if necessary, heat the temperature at 150 to 350℃ (
Manufactured by exhaust treatment at a temperature of 200 to 300°C (good).
次に本発明に係る一酸化炭素センサを石油ストーブを使
用している室内に設置した例に基づいて該センサの作用
を説明する。Next, the operation of the carbon monoxide sensor according to the present invention will be explained based on an example in which the carbon monoxide sensor according to the present invention is installed in a room where an oil stove is used.
即ち、室内の０゜は前記センサ本体２２の半導体の表面
に吸着し、従来例と同様にＳ ｎ Ｏ２から電子を奪っ
て該センサ本体２２を高抵抗としている。このとき、石
油ストーブが不完全燃焼を起し、ＣＯが発生したときは
、ＣＯが該センサ本体２２の触媒により前記吸着酸素と
高活性に酸化反応を起し、ＣＯ２を発生し、該センサ本
体２２を低抵抗とする。That is, 0° in the room is attracted to the semiconductor surface of the sensor body 22, and as in the conventional example, electrons are taken away from SnO2, making the sensor body 22 high in resistance. At this time, when the kerosene stove causes incomplete combustion and CO is generated, the CO causes a highly active oxidation reaction with the adsorbed oxygen by the catalyst in the sensor body 22, generating CO2, and the sensor body 22 generates CO2. 22 has low resistance.
このように、微量のＣＯが発生したときにも前記センサ
本体２２が低抵抗となり、ｃｏを容易に検出するし、ま
た、前記触媒はｃｏの選択性酸化触媒であることから、
ＣＯの検出精度の向上を図ることができる。更に、該触
媒は低温時においても高い活性を実現できるものであり
、従来の如くヒータ１３といった加熱装置を取付けるこ
とを要しない。In this way, even when a small amount of CO is generated, the sensor main body 22 has a low resistance and can easily detect CO, and since the catalyst is a selective oxidation catalyst for CO,
It is possible to improve the CO detection accuracy. Furthermore, the catalyst can achieve high activity even at low temperatures, and does not require the installation of a heating device such as the heater 13 as in the prior art.
また、前記センサ本体２２は触媒と半導体とを１重量％
：９９重量％から３０重量％ニア０重量％に設定し、触
媒を少量としている。これは、該触媒が過度に活性化す
るとＣＯが前記吸着酸素と反応することなく空気中の０
２と反応するという、検出感度の低下を考慮したもので
ある。Further, the sensor main body 22 contains 1% by weight of catalyst and semiconductor.
: 99% to 30% by weight, near 0% by weight, with a small amount of catalyst. This is because when the catalyst is excessively activated, CO does not react with the adsorbed oxygen and the CO remains in the air.
This takes into account the decrease in detection sensitivity due to the reaction with 2.
第３図は本発明の第２の実施例を示すもので、第１の実
施例と同様の材質からなるセンサ本体３０の上下面に銀
（Ａｇ）にて形成された電極３１ａ、３１ｂをプリント
したものである。FIG. 3 shows a second embodiment of the present invention, in which electrodes 31a and 31b made of silver (Ag) are printed on the upper and lower surfaces of a sensor body 30 made of the same material as in the first embodiment. This is what I did.
係る実施例によれば、前記プリント基板２０が不要とな
り構造が簡単となる。尚、その他の構成、効果は前記第
１の実施例と同様であ゛る。According to this embodiment, the printed circuit board 20 is not required and the structure is simplified. Note that the other configurations and effects are the same as those of the first embodiment.
第４図（ａ）（ｂ）は本発明の第３の実施例を示すもの
で、例えばセラミック製のプリント基板４０上に第１の
実施例と同様の材質からなる触媒４１をコーティングし
、更に、該触媒４１上に第１の実施例と同様の材質から
なる酸化物半導体４２を蛇行状にプリントし、該半導体
４２の両端にリード線４３ａ、４３ｂに接続した電極４
４ａ。4(a) and 4(b) show a third embodiment of the present invention, in which a catalyst 41 made of the same material as in the first embodiment is coated on a ceramic printed circuit board 40, and , an oxide semiconductor 42 made of the same material as in the first embodiment is printed on the catalyst 41 in a serpentine shape, and electrodes 4 are connected to lead wires 43a and 43b at both ends of the semiconductor 42.
4a.
４４ｂを有しているものである。44b.
係る実施例によれば、該触媒４１と半導体４２とを混合
することを要しないし、また、該プリント基板４０の上
下面に電極を大きく配置することを要しない。尚、その
他の構成、効果は前記第１の実施例と同様である。According to this embodiment, it is not necessary to mix the catalyst 41 and the semiconductor 42, and it is not necessary to arrange large electrodes on the upper and lower surfaces of the printed circuit board 40. Note that the other configurations and effects are the same as those of the first embodiment.
尚、前記各実施例では一酸化炭素センサを石油ストーブ
を設置した室内に使用した場合を説明したが、自動車の
車室内は勿論のこと、およそ一酸化炭素の検出を要する
場所であれば、どのような場所においても使用すること
ができる。また、前記各実施例では酸化物半導体として
Ｓ ｎ ０２を用いているが、酸化インジュウム（Ｉｎ
２ｏ３）、酸化タングステン（ＷＯ３）、酸化亜鉛（Ｚ
ｎＯ）或いは、酸化亜鉛（ＺｎＯ）と酸化アルミニウム
（ＡＩ Ｏ）と酸化リチューム（Ｌ ｉＯａ ）を混
合したものを用いても良い。In each of the above embodiments, the carbon monoxide sensor was used in a room with a kerosene heater installed, but it can be used not only in the interior of a car but also in any place where carbon monoxide needs to be detected. It can also be used in such places. Further, in each of the above embodiments, Sn02 is used as the oxide semiconductor, but indium oxide (In
2o3), tungsten oxide (WO3), zinc oxide (Z
Alternatively, a mixture of zinc oxide (ZnO), aluminum oxide (AIO), and lithium oxide (L iOa ) may be used.
（発明の効果）
以上説明したように、本発明は酸化物半導体にコバルト
テトラフェニルボルフィリンを担持した水和酸化チタン
からなる一酸化炭素の選択酸化触媒を付加したので、低
温時においても一酸化炭素が酸化物半導体に吸着した酸
素と反応する。従って、従来の如くヒータを装着するこ
とを要せず、構造の簡単な一酸化炭素センサが提供され
るという利点を有する。また、該触媒は一酸化炭素に対
して選択性を有する酸化触媒であるから、一酸化炭素の
該吸着酸素による酸化反応が促進し、一酸化炭素センサ
の感度及び信頼性が向上するという利点を有する。(Effects of the Invention) As explained above, the present invention adds a carbon monoxide selective oxidation catalyst made of hydrated titanium oxide supporting cobalt tetraphenylborphyrin to an oxide semiconductor, so that carbon monoxide can be absorbed even at low temperatures. reacts with oxygen adsorbed on the oxide semiconductor. Therefore, there is an advantage that a carbon monoxide sensor with a simple structure is provided without requiring a heater as in the conventional case. Furthermore, since the catalyst is an oxidation catalyst that is selective to carbon monoxide, the oxidation reaction of carbon monoxide by the adsorbed oxygen is promoted, and the sensitivity and reliability of the carbon monoxide sensor are improved. have
第１図（ａ）（ｂ）は本発明の第１の実施例を示すもの
で、第１図（ａ）は一酸化炭素センサの平面図、第１図
（ｂ）は第１図（ａ）のＩ−Ｉ線矢視方向の断面図、第
２図は従来の一酸化炭素センサを示す斜視図、第３図は
本発明の第２の実施例に係る一酸化炭素センサを示す断
面図、第４図（ａ）（ｂ）は本発明の第３の実施例を示
すもので、第４図（ａ）は一酸化炭素センサを示す平面
図、第４図（ｂ’）は第４図（ａ）のＩＶ−ＩＶ線矢視
方向の断面図である。
図中、２０．４０・・・プリント基板、２１ａ。
２１ｂ、３１ａ、３１ｂ、４４ａ、４４ｂ−・・電極、
２２．３０・・・センサ本体、２３ ａ、 ２３ ｂ
、 ４３ａ、４３ｂ・・・リード線、４１・・・選択
性酸化触媒、４２・・・酸化物半導体。1(a) and 1(b) show a first embodiment of the present invention, FIG. 1(a) is a plan view of a carbon monoxide sensor, and FIG. 1(b) is a plan view of a carbon monoxide sensor. ), FIG. 2 is a perspective view showing a conventional carbon monoxide sensor, and FIG. 3 is a sectional view showing a carbon monoxide sensor according to a second embodiment of the present invention. , FIGS. 4(a) and 4(b) show a third embodiment of the present invention. FIG. 4(a) is a plan view showing a carbon monoxide sensor, and FIG. 4(b') is a plan view showing a carbon monoxide sensor. FIG. 3 is a cross-sectional view taken along the line IV-IV in FIG. In the figure, 20.40... printed circuit board, 21a. 21b, 31a, 31b, 44a, 44b--electrode,
22.30...sensor body, 23 a, 23 b
, 43a, 43b... Lead wire, 41... Selective oxidation catalyst, 42... Oxide semiconductor.
Claims (1)
該酸化物半導体に吸着するときは高抵抗となり、一酸化
炭素が該吸着酸素により酸化するとき二酸化炭素を発生
して低抵抗となる一酸化炭素センサにおいて、前記酸化
物半導体にコバルトテトラフェニルボルフィリンを担持
した水和酸化チタンからなる一酸化炭素の選択酸化触媒
を付加したことを特徴とする一酸化炭素センサ。An electrode for detecting electrical resistance is connected to the oxide semiconductor, and when oxygen is adsorbed to the oxide semiconductor, the resistance becomes high, and when carbon monoxide is oxidized by the adsorbed oxygen, carbon dioxide is generated and the resistance becomes low. A carbon monoxide sensor, characterized in that a carbon monoxide selective oxidation catalyst made of hydrated titanium oxide supporting cobalt tetraphenylborphyrin is added to the oxide semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11399987A JPS63279151A (en) | 1987-05-11 | 1987-05-11 | Carbon monoxide sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11399987A JPS63279151A (en) | 1987-05-11 | 1987-05-11 | Carbon monoxide sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63279151A true JPS63279151A (en) | 1988-11-16 |
Family
ID=14626527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11399987A Pending JPS63279151A (en) | 1987-05-11 | 1987-05-11 | Carbon monoxide sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63279151A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2225963A (en) * | 1988-11-21 | 1990-06-20 | Atomic Energy Authority Uk | Supported oxidation catalyst |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5999244A (en) * | 1982-11-30 | 1984-06-07 | Toshiba Corp | Detector for gaseous co |
| JPS6031827A (en) * | 1983-08-02 | 1985-02-18 | Titan Kogyo Kk | Highly active catalyst for oxidizing carbon monoxide and hydrogen and its preparation |
| JPS6069544A (en) * | 1983-06-24 | 1985-04-20 | アイ テイ テイ インダストリ−ズ インコ−ポレ−テツド | Gas sensor |
-
1987
- 1987-05-11 JP JP11399987A patent/JPS63279151A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5999244A (en) * | 1982-11-30 | 1984-06-07 | Toshiba Corp | Detector for gaseous co |
| JPS6069544A (en) * | 1983-06-24 | 1985-04-20 | アイ テイ テイ インダストリ−ズ インコ−ポレ−テツド | Gas sensor |
| JPS6031827A (en) * | 1983-08-02 | 1985-02-18 | Titan Kogyo Kk | Highly active catalyst for oxidizing carbon monoxide and hydrogen and its preparation |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2225963A (en) * | 1988-11-21 | 1990-06-20 | Atomic Energy Authority Uk | Supported oxidation catalyst |
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