JPS63273346A - Semiconductor integrated logic circuit - Google Patents

Semiconductor integrated logic circuit

Info

Publication number
JPS63273346A
JPS63273346A JP62108394A JP10839487A JPS63273346A JP S63273346 A JPS63273346 A JP S63273346A JP 62108394 A JP62108394 A JP 62108394A JP 10839487 A JP10839487 A JP 10839487A JP S63273346 A JPS63273346 A JP S63273346A
Authority
JP
Japan
Prior art keywords
terminal
resistor
semiconductor integrated
emitter
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62108394A
Other languages
Japanese (ja)
Inventor
Tomio Ushida
牛田 富雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62108394A priority Critical patent/JPS63273346A/en
Publication of JPS63273346A publication Critical patent/JPS63273346A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To easily detect the improper connection of a terminating resistor on a high density mounting substrate by connecting a pull-up resistor between the high potential point of a logic output and the emitter terminal of an emitter follower transistor Tr. CONSTITUTION:When a transmission line 300 falls into a non-bias state due to the improper connection of a terminating resistor 400, the potential of the output terminal 501 of a semiconductor integrated circuit 500 becomes a level determined by the resistance ratio of a pull-up resistor 221 to the input resistance of a circuit 550 as observed from the input terminal 551 of a semiconductor integrated circuit 550. That is, since the resistor 221 here is set to a sufficiently smaller resistance value than the input resistance of the circuit 550, the terminal 501 is raised to the vicinity of a ground level. Thus, an emitter follower Tr 212 is cut OFF, and the terminal 501 is secured to a high level irrespective of the signal applied to the input terminal 202. Thus, since the improper connection of the resistor 400 is reflected in the logical operation, this improper connection can be easily detected.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、出力段にエミッタフォロワ回路を用いた半導
体集積論理回路に関し、詳しくは、出力段にエミッタフ
ォロワ回路を用いた半導体集積論理回路を多数搭載して
論理装置を構成する場合において、該半導体集積論理回
路の終端抵抗の接続不良を、通常の論理動作テストによ
り容易に検出可能とする半導体集積論理回路に関するも
のである。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a semiconductor integrated logic circuit using an emitter follower circuit in the output stage, and more specifically, to a semiconductor integrated logic circuit using an emitter follower circuit in the output stage. The present invention relates to a semiconductor integrated logic circuit that allows a connection failure of a termination resistor of the semiconductor integrated logic circuit to be easily detected by a normal logic operation test when a large number of semiconductor integrated logic circuits are installed to form a logic device.

〔従来の技術〕[Conventional technology]

従来、出力段にエミッタフォロワ回路を用い、エミッタ
フォロワトランジスタのエミッタ端子を外部出力端子と
して負荷の終端抵抗を外付する半導体集積論理回路を単
位ユニットとして相互接続して構成した論理装置は、例
えば、第2図のように構成さ九でいる。
Conventionally, a logic device is constructed by interconnecting semiconductor integrated logic circuits as a unit, using an emitter follower circuit in the output stage, using the emitter terminal of the emitter follower transistor as an external output terminal, and externally attaching a terminating resistor for the load. It is constructed as shown in Figure 2.

第2図において、基板100にはエミッタフォロワトラ
ンジスタのエミッタ端子を外部出力端子201として有
する半導体集積論理回路200と他の半導体集積論理回
路250とが搭載され、半導体集積論理回路200の外
部出力端子201に負荷の終端抵抗400が伝送線30
0を介して外付され、終端抵抗400と伝送線300と
の接続点である端子301が次段の半導体集積論理回路
250の入力端子251に接続されている。
In FIG. 2, a semiconductor integrated logic circuit 200 having an emitter terminal of an emitter follower transistor as an external output terminal 201 and another semiconductor integrated logic circuit 250 are mounted on a substrate 100. The terminating resistor 400 of the load is connected to the transmission line 30
A terminal 301, which is connected externally through a terminal 0 and is a connection point between the terminating resistor 400 and the transmission line 300, is connected to an input terminal 251 of a semiconductor integrated logic circuit 250 at the next stage.

このように出力段にエミッタフォロワ回路を用いた半導
体集積論理回路同志を基板上で接続する場合、信号伝送
経路の時定数を低くすることにより信号の伝搬遅延時間
を小さくし、また反射ノ、イズの発生を防ぐため1通常
、第2図に示すように。
When semiconductor integrated logic circuits using emitter follower circuits in the output stage are connected on a substrate in this way, the time constant of the signal transmission path is lowered to reduce the signal propagation delay time, and also to reduce reflection noise and noise. To prevent the occurrence of 1. Usually, as shown in Figure 2.

伝送線のインピーダンスと同じ抵抗値を持つ終端抵抗4
00を介して伝送線の受端側の端子301をエミッタフ
ォロワ回路用電源の端子401に接続する。
Terminating resistor 4 with the same resistance value as the impedance of the transmission line
00, the terminal 301 on the receiving end side of the transmission line is connected to the terminal 401 of the emitter follower circuit power supply.

また、他の例として、第3図に示すように、特別にエミ
ッタフォロワ回路用電源を用意せず、グランド等の高電
位端子41[とECL型論理回路用電源等の低電位端子
421の間を、伝送線のインピーダンスと同じ並列抵抗
値を持つ2個の抵抗4]、0.420で分圧しその分圧
点に伝送線の受端側の端子301を接続する場合もある
As another example, as shown in FIG. 3, a power supply for the emitter follower circuit is not specially prepared, and a high potential terminal 41 such as the ground is connected to a low potential terminal 421 such as a power supply for an ECL type logic circuit. In some cases, the voltage is divided by two resistors 4] having a parallel resistance value equal to the impedance of the transmission line, 0.420, and the terminal 301 on the receiving end side of the transmission line is connected to the voltage division point.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

ところで、出力段にエミッタフォロワ回路を用いた半導
体集積論理回路を搭載した基板をテストする場合、伝送
線の断線や短絡による故障は論理固定故障として、論理
的に異常な動作をするため、論理動作のテストにより容
易に検出できるが、終端抵抗の接続不良により伝送線が
非バイアス状態となる故障の場合、伝送経路の時定数が
受端側の半導体集積論理回路の入力インピーダンスによ
って定まるため、信号の伝搬遅延時間が一般に非常に大
きくなり、また反射ノイズが発生するため実用上問題と
なるにもかかわらず、論理的には正常に動作するため、
論理動作のテストでは検出できないという問題があった
By the way, when testing a board equipped with a semiconductor integrated logic circuit that uses an emitter follower circuit in the output stage, failures due to disconnections or short circuits in the transmission line are treated as logic fixed failures and cause logically abnormal operation. However, in the case of a fault in which the transmission line becomes unbiased due to a poor connection of the terminating resistor, the time constant of the transmission path is determined by the input impedance of the semiconductor integrated logic circuit on the receiving end, so the signal Although it is a practical problem because the propagation delay time is generally very large and reflection noise occurs, it works logically, so
There was a problem that it could not be detected by logic operation tests.

また、第3図で示す抵抗分圧形式の終端の場合でも、2
つの抵抗410,420の内どちらか一方が接続不良と
なった場合には、論理的な動作が異常となるため通常の
論理動作テストで検出できるが、2つの抵抗410,4
20の両方の接続不良により伝送線300が非バイアス
状態になった場合には、論理的には正常に動作するため
論FlX動作のテストでは検出できないという問題があ
った。
In addition, even in the case of the resistor voltage division type termination shown in Figure 3, 2
If either one of the two resistors 410, 420 has a connection failure, the logical operation will be abnormal and it can be detected by a normal logic operation test, but if one of the two resistors 410, 420
If the transmission line 300 becomes non-biased due to a connection failure in both of the transistors 20 and 20, there is a problem in that it cannot be detected by the logical FlX operation test because it logically operates normally.

抵抗分圧形式の終端では、通常、反射ノイズを防ぐため
2つの抵抗を伝送線の一点に集中して接続するので、こ
の部分が接続不良となり、伝送線が非バイアス状態とな
ることは充分考えられる。
In resistor voltage division type terminations, two resistors are usually connected at one point on the transmission line to prevent reflected noise, so it is very likely that a connection failure will occur at this point and the transmission line will become unbiased. It will be done.

このように終端抵抗の接続不良は論理動作のテストでは
検出できないため、従来は回路の動作速度を測定し設計
値と比較するか、あるいは基板上の信号伝送経路の直流
抵抗を直接測定することにより終端抵抗の接続状態をテ
ストしていた。
In this way, connection failures in terminating resistors cannot be detected by logic operation tests, so conventional methods have been to measure the operating speed of the circuit and compare it with the design value, or to directly measure the DC resistance of the signal transmission path on the board. I was testing the connection status of the terminating resistor.

しかし1回路の動作速度を測定するためには基板の入力
端子から測定対象の信号伝送経路を通って、出力端子に
信号が伝わるように論理的な条件を設定する必要があり
、基板上に半導体集積論理回路を多数搭載した大規模な
論理装置には適さない。また、基板上の実装が高密度化
するに伴い、基板上の信号伝送経路の直流抵抗を直接測
定することも困難になりつつあるという問題があった。
However, in order to measure the operating speed of a single circuit, it is necessary to set logical conditions so that the signal is transmitted from the input terminal of the board through the signal transmission path of the object to be measured to the output terminal. It is not suitable for large-scale logic devices equipped with many integrated logic circuits. Furthermore, as the mounting density on the substrate increases, there has been a problem in that it is becoming difficult to directly measure the DC resistance of the signal transmission path on the substrate.

本発明は、前記問題点を解決するためになされたもので
ある。
The present invention has been made to solve the above problems.

本発明の目的は、出力段にエミッタフォロワ回路を用い
た半導体集積論理回路を多数搭載して論理装置を構成す
る場合の基板上における終端抵抗の接続不良を、通常の
論理動作のテストにより容易に検出可能な半導体集積論
理回路を提供することにある。
It is an object of the present invention to easily detect connection failures of termination resistors on a board when a logic device is configured by mounting a large number of semiconductor integrated logic circuits using emitter follower circuits in the output stage by a normal logic operation test. An object of the present invention is to provide a detectable semiconductor integrated logic circuit.

本発明の前記ならびにその他の目的と新規な特徴は1本
明細書の記述及び添付図面によって明らかになるであろ
う。
The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

〔問題点を解決するための手段〕[Means for solving problems]

前記の目的を達成するためになされた本発明のうち、代
表的なものの概要を簡単に説明すれば、下記のとおりで
ある。
Among the present inventions made to achieve the above object, a brief outline of typical ones is as follows.

本発明においては、出力段にエミッタフォロワ回路を用
い、エミッタフォロワトランジスタのエミッタ端子を外
部出力端子として負荷の終端抵抗を外付する半導体集積
論理回路において、前記半導体集積論理回路内に、論理
出力の高レベル側出力電位より高い電位点と前記エミッ
タフォロワトランジスタのエミッタ端子との間を接続す
るプルアップ抵抗を設け、前記プルアップ抵抗は前記エ
ミッタフォロワトランジスタが許容範囲の負荷状態にお
いて非バイアス状態になった場合に、前記エミッタ端子
の電位が高レベル側の出力電位となるような抵抗値とす
ることを主な特徴とする。
The present invention provides a semiconductor integrated logic circuit in which an emitter follower circuit is used in the output stage, the emitter terminal of the emitter follower transistor is used as an external output terminal, and a load termination resistor is externally connected. A pull-up resistor is provided that connects a potential point higher than the high-level side output potential and the emitter terminal of the emitter follower transistor, and the pull-up resistor is configured such that the emitter follower transistor is in a non-biased state when the load is within an allowable range. The main feature is that the resistance value is such that the potential of the emitter terminal becomes a high-level output potential when

〔作用〕[Effect]

前記手段によれば、半導体集積論理回路の出力段のエミ
ッタフォロワトランジスタのエミッタ端子は、半導体集
積論理回路内でプルアップ抵抗を介して、高レベル側の
出力電位より高い電位点に接続される。このプルアップ
抵抗は、外付さ九る終端抵抗の抵抗値より充分大きく、
かつ前記エミッタ端子に許容範囲の負荷をつけ終端抵抗
を取りはずした状態で前記エミッタ端子が高レベル側の
出力電位となるような抵抗値である。したがって。
According to the above means, the emitter terminal of the emitter follower transistor in the output stage of the semiconductor integrated logic circuit is connected to a potential point higher than the high-level output potential within the semiconductor integrated logic circuit via the pull-up resistor. This pull-up resistor is sufficiently larger than the resistance value of the external termination resistor.
The resistance value is such that the emitter terminal has an output potential on the high level side when a load within an allowable range is applied to the emitter terminal and the terminating resistor is removed. therefore.

基板上で終端抵抗が正しく接続されている状態では半導
体集積回路の出力段のエミッタフォロワトランジスタの
エミッタ端子の出力レベルは、論理動作に従い正しく高
レベルおよび低レベルとなる。
When the termination resistor is correctly connected on the substrate, the output level of the emitter terminal of the emitter follower transistor in the output stage of the semiconductor integrated circuit becomes a high level and a low level correctly according to the logic operation.

また、終端抵抗の接続不良により前記エミッタ端子が非
バイアス状態に陥った場合、プルアップ抵抗により前記
エミッタ端子の出力レベルが高レベルに固定されるため
、論理動作が正常に行なわ九なくなり通常の論理動作の
テストにより故障として検出できる。
In addition, if the emitter terminal falls into a non-biased state due to a poor connection of the terminating resistor, the output level of the emitter terminal is fixed at a high level by the pull-up resistor. It can be detected as a failure by testing the operation.

〔実施例〕〔Example〕

以下、本発明の一実施例を図により説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

第1図は1本発明によるプルアップ抵抗を設けた半導体
集積論理回路500および550を、基板100上に搭
載し、半導体集積論理回路500の出力端子50Fと半
導体集積論理回路550の入力端子551を伝送fi3
00によって接続した状態を示している。また伝送線3
00の受端側の端子301には終端抵抗400が接続し
である。
In FIG. 1, semiconductor integrated logic circuits 500 and 550 provided with pull-up resistors according to the present invention are mounted on a substrate 100, and an output terminal 50F of the semiconductor integrated logic circuit 500 and an input terminal 551 of the semiconductor integrated logic circuit 550 are connected. transmission fi3
00 indicates a connected state. Also transmission line 3
A terminating resistor 400 is connected to the terminal 301 on the receiving end side of 00.

半導体集積論理回路500は、出力段の回路が抵抗22
0. トランジスタ210,211.電流@230によ
り構成された通常のECL型Ja理回路、エミッタフォ
ロワトランジスタ212.およびプルアップ抵抗221
により構成されている。
In the semiconductor integrated logic circuit 500, the output stage circuit includes a resistor 22.
0. Transistors 210, 211. A normal ECL type Ja logic circuit configured with a current @230, an emitter follower transistor 212. and pull-up resistor 221
It is made up of.

ここで端子202は回路の入力端子、端子203は参照
電位端子である。なお、第1図において、205はEC
LC陰型論理回路源端子である。
Here, the terminal 202 is an input terminal of the circuit, and the terminal 203 is a reference potential terminal. In addition, in Fig. 1, 205 is EC
This is an LC negative logic circuit source terminal.

第1図の半導体集積論理回路500のプルアップ抵抗2
21の接続テストは、半導体集積論理回路500の単体
テスト時にグランド端子504と出力端子501間の直
流抵抗を直接測定することにより行われる。また、ここ
でのプルアップ抵抗221の抵抗値は、終端抵抗400
の抵抗値より充分大きく、かつ入力端子551から観た
半導体集積論理回路550の入力抵抗値より充分小さな
値に設定さjbているものである。
Pull-up resistor 2 of semiconductor integrated logic circuit 500 in FIG.
The connection test 21 is performed by directly measuring the DC resistance between the ground terminal 504 and the output terminal 501 during a unit test of the semiconductor integrated logic circuit 500. Also, the resistance value of the pull-up resistor 221 here is equal to the resistance value of the terminating resistor 400.
jb is set to a value that is sufficiently larger than the resistance value of , and sufficiently smaller than the input resistance value of the semiconductor integrated logic circuit 550 viewed from the input terminal 551.

この状態で半導体集積回路回W8500内の出力回路は
通常のECL型論理回路と同様の動作を行う。すなわち
入力端子202に高レベルの信号を印加すれば出力端子
501は高レベルとなり、入力端子202に低レベルの
信号を印加すれば出力端子501は低レベルとなる。
In this state, the output circuit in the semiconductor integrated circuit circuit W8500 performs the same operation as a normal ECL type logic circuit. That is, if a high level signal is applied to the input terminal 202, the output terminal 501 becomes a high level, and if a low level signal is applied to the input terminal 202, the output terminal 501 becomes a low level.

ところで、終端抵抗400の接続子」1により。By the way, by the connector "1" of the terminating resistor 400.

伝送線300が非バイアス状態に陥ると、出力端子50
1の電位はプルアップ抵抗221と、入力端子551か
ら観た半導体集積論理回路55Qの入力抵抗の抵抗比に
よって定まるレベルとなる。
When the transmission line 300 falls into an unbiased state, the output terminal 50
The potential of 1 is a level determined by the resistance ratio of the pull-up resistor 221 and the input resistor of the semiconductor integrated logic circuit 55Q viewed from the input terminal 551.

すなわち、ここでのプルアップ抵抗221は半導体集積
論理回路550の入力抵抗に対して充分小さな抵抗値に
設定しであるため、出力端子501はグランドレベル付
近進中き上げられる。このため、エミッタフォロワトラ
ンジスタ212はカットオフし、入力端子202に印加
される信号にかかわらず、出力端子501は高レベルに
固定さ九る。
That is, since the pull-up resistor 221 here is set to a sufficiently small resistance value with respect to the input resistance of the semiconductor integrated logic circuit 550, the output terminal 501 is pulled up while approaching the ground level. Therefore, emitter follower transistor 212 is cut off, and output terminal 501 is fixed at a high level regardless of the signal applied to input terminal 202.

また、プルアップ抵抗221の接続は、半導体集積回路
500の単体テスト時に実施しであるので、プルアップ
抵抗22 Lの接続不良と終端抵抗400の接続不良が
同時l;発生することはない。
Further, since the connection of the pull-up resistor 221 is performed during a unit test of the semiconductor integrated circuit 500, a connection failure of the pull-up resistor 22L and a connection failure of the terminating resistor 400 do not occur at the same time.

このように、本実施例の半導体集積論理回路を用いて、
該半導体集積論理回路を多数基板上に搭載して論理装置
!1を構成する場合においては、終端抵抗の接続不良が
回路の論理的な動作に反映するため、かかる不良を容易
に検出できる。
In this way, using the semiconductor integrated logic circuit of this example,
Logic devices can be created by mounting multiple semiconductor integrated logic circuits on a board! 1, the connection failure of the terminating resistor is reflected in the logical operation of the circuit, so such failure can be easily detected.

以上、本発明を前記実施例に基づき具体的に説明したか
、本発明は、前記実施例に限定されるものでな(、その
要旨を逸脱しない範囲において、種々変形しうろことは
勿論である。
Although the present invention has been specifically explained based on the above embodiments, the present invention is not limited to the above embodiments (although it is of course possible to make various modifications without departing from the gist thereof). .

〔発明の効果〕〔Effect of the invention〕

以上、説明したように、本発明によれば、出力段にエミ
ッタフォロワ回路を用いた半導体集積論理回路を搭載し
た基板において、前記基板上の終端抵抗の接続不良を通
常の論理動作のテストで検出できるので、半導体集積論
理回路を多数搭載した大規模論理基板、高密度実装基板
における終端抵抗の接続不良が、従来に較べて容易に検
出できるという効果がある。
As described above, according to the present invention, in a substrate mounted with a semiconductor integrated logic circuit using an emitter follower circuit in the output stage, a connection failure of a termination resistor on the substrate is detected by a normal logic operation test. This has the effect that connection failures of termination resistors on large-scale logic boards and high-density mounting boards on which many semiconductor integrated logic circuits are mounted can be detected more easily than in the past.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明の一実施例である半導体集積回路を基
板1;搭載し、通常の終端を行った状態を示す図、 第2図は、従来の半導体集積論理回路を基板に搭載し通
常の終端を行った状態を示す図。 第3図は、従来の半導体集積論理回路を基板に搭載し、
抵抗分圧形式の終端を行った状態を示す図である。 図中、100・・・J&仮、200,250,500゜
550・・・半導体集積回路、201.sat・・・出
力端子、202・・・入力端子、203・・・参照゛上
位端子、504.411・・・グランド端子、205+
 421・・・ECL型論理回路用電源端子、210,
211゜212−トランジスタ、2201221140
01410.420・・・抵抗、300・・・伝送線、
301・終端抵抗接続用端子、251,551・・・入
力端子である。
Fig. 1 shows a state in which a semiconductor integrated circuit according to an embodiment of the present invention is mounted on a substrate 1 and normal termination is performed, and Fig. 2 shows a state in which a conventional semiconductor integrated logic circuit is mounted on a board. A diagram showing a state in which normal termination has been performed. Figure 3 shows a conventional semiconductor integrated logic circuit mounted on a board.
FIG. 3 is a diagram illustrating a state in which resistance-divided voltage termination is performed. In the figure, 100...J&tentative, 200, 250, 500°550... semiconductor integrated circuit, 201. sat...output terminal, 202...input terminal, 203...reference upper terminal, 504.411...ground terminal, 205+
421...ECL type logic circuit power supply terminal, 210,
211°212-transistor, 2201221140
01410.420...Resistance, 300...Transmission line,
301 - Terminal resistor connection terminal, 251, 551... Input terminal.

Claims (1)

【特許請求の範囲】[Claims] 1、出力段にエミッタフォロワ回路を用い、エミッタフ
ォロワトランジスタのエミッタ端子を外部出力端子とし
て負荷の終端抵抗を外付する半導体集積論理回路におい
て、前記半導体集積論理回路内に、論理出力の高レベル
側の出力電位より高い電位点と前記エミッタフォロワト
ランジスタのエミッタ端子との間を接続するプルアップ
抵抗を設け、前記プルアップ抵抗は前記エミッタフォロ
ワトランジスタが許容範囲の負荷状態において非バイア
ス状態になった場合に、前記エミッタ端子の電位が高レ
ベル側の出力電位となるような抵抗値とすることを特徴
とする半導体集積論理回路。
1. In a semiconductor integrated logic circuit in which an emitter follower circuit is used in the output stage, the emitter terminal of the emitter follower transistor is used as an external output terminal, and a load termination resistor is externally attached. A pull-up resistor is provided to connect between a potential point higher than the output potential of the emitter terminal of the emitter-follower transistor and the emitter terminal of the emitter-follower transistor, and the pull-up resistor is connected when the emitter-follower transistor is in a non-biased state in an allowable load state. A semiconductor integrated logic circuit characterized in that the resistance value is such that the potential of the emitter terminal becomes a high-level output potential.
JP62108394A 1987-05-01 1987-05-01 Semiconductor integrated logic circuit Pending JPS63273346A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62108394A JPS63273346A (en) 1987-05-01 1987-05-01 Semiconductor integrated logic circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62108394A JPS63273346A (en) 1987-05-01 1987-05-01 Semiconductor integrated logic circuit

Publications (1)

Publication Number Publication Date
JPS63273346A true JPS63273346A (en) 1988-11-10

Family

ID=14483648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62108394A Pending JPS63273346A (en) 1987-05-01 1987-05-01 Semiconductor integrated logic circuit

Country Status (1)

Country Link
JP (1) JPS63273346A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009164933A (en) * 2008-01-08 2009-07-23 Fujitsu Microelectronics Ltd Semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009164933A (en) * 2008-01-08 2009-07-23 Fujitsu Microelectronics Ltd Semiconductor integrated circuit

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