JPS63272064A - Semiconductor device with thin film resistor - Google Patents
Semiconductor device with thin film resistorInfo
- Publication number
- JPS63272064A JPS63272064A JP10772487A JP10772487A JPS63272064A JP S63272064 A JPS63272064 A JP S63272064A JP 10772487 A JP10772487 A JP 10772487A JP 10772487 A JP10772487 A JP 10772487A JP S63272064 A JPS63272064 A JP S63272064A
- Authority
- JP
- Japan
- Prior art keywords
- tungsten silicide
- thin film
- film
- resistor
- film resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910021342 tungsten silicide Inorganic materials 0.000 claims abstract description 44
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 229910001080 W alloy Inorganic materials 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 229910000676 Si alloy Inorganic materials 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 58
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 238000001312 dry etching Methods 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 4
- 239000012808 vapor phase Substances 0.000 abstract description 3
- 238000000206 photolithography Methods 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 description 11
- 239000000956 alloy Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229910018487 Ni—Cr Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910018106 Ni—C Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はＤ／Ａ変換回路、Ａ／Ｄ変換回路等の抵抗素子
を有する高集積、高密度な半導体装置の電気抵抗体に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electrical resistor for highly integrated, high-density semiconductor devices having resistance elements such as D/A conversion circuits and A/D conversion circuits.
高精度かつ温度特性良好な薄膜抵抗体として、タングス
テン（Ｗ）とシリコン（Ｓｉ）との合金であるタングス
テンシリサイド膜を用いる。A tungsten silicide film, which is an alloy of tungsten (W) and silicon (Si), is used as a thin film resistor with high precision and good temperature characteristics.
第３図及び第４図に従来の薄膜抵抗体を有する半導体装
置を示す。通常薄膜抵抗体として第３図に示すＮｉ−Ｃ
ｒ合金または第４図に示すＣｒ−５ｉＯ合金が用いられ
、薄膜抵抗体のパターニングにはウェットエツチングが
用いられる０例えばＮｉ −Ｃｒ合金の場合には硝酸、
塩酸、水の混合液または塩酸。FIGS. 3 and 4 show semiconductor devices having conventional thin film resistors. Ni-C shown in Figure 3 as a normal thin film resistor
For example, in the case of Ni-Cr alloy, nitric acid,
Hydrochloric acid, water mixture or hydrochloric acid.
水の混合液が用いられ、Ｃｒ−５ｔＯ合金の場合には塩
酸、水の混合液または硫酸、水の混合液が用いられる。A mixture of water is used, and in the case of a Cr-5tO alloy, a mixture of hydrochloric acid and water or a mixture of sulfuric acid and water is used.
しかし従来の方法では薄膜抵抗体のパターニングに化学
反応によるウェットエツチングを用いており、エツチン
グが等友釣に進むためいわゆるアンダーカットが生じ寸
法制御が困難であった。従って抵抗値に誤差が生じやす
く高精度品への通用には極めて難しい状況にある。また
エツチング後の溶液はＣｒ等の人体に有害な物質を含ん
でおり、その扱いや処理方法及び処理に要する費用等の
問題を有している。However, in the conventional method, wet etching using a chemical reaction is used for patterning the thin film resistor, and because the etching progresses uniformly, so-called undercuts occur, making it difficult to control the dimensions. Therefore, errors are likely to occur in the resistance value, making it extremely difficult to use as a high-precision product. Further, the solution after etching contains substances harmful to the human body, such as Cr, and there are problems with its handling, processing method, and cost required for processing.
上記問題点を解決するために本発明は、タングステン（
Ｗ）とシリコン（Ｓｉ）との合金であるタングステンシ
リサイドを′ｉＩＪ膜抵抗体として用い、抵抗体の加工
をドライエツチングで行なうようにした。In order to solve the above problems, the present invention has developed tungsten (
Tungsten silicide, which is an alloy of W) and silicon (Si), was used as the iIJ film resistor, and the resistor was processed by dry etching.
タングステンシリサイド膜は、抵抗のバラツキも小さく
、かつ平均抵抗温度係数は（ＴＣＲ）も小さく、かつド
ライエツチングによる高精度なバターニングもできるの
で、非常に高精度で信頼性の高い抵抗体を作成できる。Tungsten silicide films have small variations in resistance, a small temperature coefficient of average resistance (TCR), and can be patterned with high precision by dry etching, making it possible to create resistors with extremely high precision and reliability. .
本発明の基本構成は、タングステン（Ｗ）とシリコン（
Ｓｉ）との合金であるタングステンシリサイド（化学式
ＷＳｉｘ、ｘは組成比）を薄膜抵抗体とする事にある。The basic structure of the present invention is tungsten (W) and silicon (
The purpose is to use tungsten silicide (chemical formula WSix, x is the composition ratio), which is an alloy with Si), as a thin film resistor.
第１図に示す様に絶縁膜２の上にタングステンシリサイ
ド膜３を積層する。このタングステンシリサイド膜３を
薄膜抵抗体として使用するため所望の抵抗が得られる様
に所望の形状に加工する。この加工法にはフォトリング
ラフィとエツチング法を用いる。タングステンシリサイ
ドのエツチングにはドライエツチング法を用いる事がで
き、フォトレジストからのパターン変換差の少ないエツ
チングができる。従ってタングステンシリサイドの寸法
を精密に制御ができるため抵抗のバラツキを小さくする
事ができる。次に配線金属４を積層し所望の形状に配線
金属４を加工する。この時、もちろん薄膜抵抗体となる
タングステンシリサイド膜３とのコンタクトもとる。配
線金属４として、一般にはアルミニウム（ＡＩ）やアル
ミニウムを主成分としたアルミニウム系金属（Ａ ＩＩ
−Ｓｉ、 Ａ ｊ！ −Ｓｔ −Ｃｕ、 Ａ ｊ
！ −Ｔｉ−Ｗなど）を用いるが、他の金属でも問題な
い、タングステンシリサイド膜３は種々の方法で積層で
きる０例えば、化学気相成長法を用いてタングステンシ
リサイド膜を成長できる。その１例として六フッ化タン
グステン（ＷＦ６）ガスとシラン（ＳｉＨ４）ガスとを
０℃〜８００℃の範囲の温度で化学気相反応させタング
ステンシリサイド膜を積層する。この反応系では、ＷＦ
、ガスの流量が少ないほど、ＳｉＨ４ガスの流量が多い
ほど、また成長温度が高いほどシリコン過剰となり、（
ＷＳｉｘのＸの値が大きくなる）抵抗値を上げる事がで
きる。また別の例として、ＷＦ、ガスとジクロルシラン
（ＳｉＨｘＣｌｇ）ガスとを２００℃〜９００℃の範囲
の温度で化学気相反応させタングステンシリサイド膜を
積層できる。化学気相成長（ＣＶ Ｄ）法の利点は、ガ
ス流量や成長温度を変化させる事により容易にタングス
テンシリサイド膜の組成を変えることができる事と条件
を固定すれば膜厚及び膜質均一性の優れたタングステン
シリサイド膜を形成する事ができる事にある。タングス
テンシリサイドの形成法としては上記のＣＶＤ法の他に
スパッタ法等のＰＶＤ法も挙げられる。As shown in FIG. 1, a tungsten silicide film 3 is laminated on an insulating film 2. Since this tungsten silicide film 3 is used as a thin film resistor, it is processed into a desired shape so as to obtain a desired resistance. This processing method uses photolithography and etching. A dry etching method can be used for etching tungsten silicide, and etching can be performed with little difference in pattern conversion from photoresist. Therefore, the dimensions of the tungsten silicide can be precisely controlled, making it possible to reduce variations in resistance. Next, the wiring metal 4 is laminated and processed into a desired shape. At this time, of course, contact is also made with the tungsten silicide film 3 that will become the thin film resistor. The wiring metal 4 is generally made of aluminum (AI) or an aluminum-based metal containing aluminum as its main component (A II).
-Si, A j! -St -Cu, A j
! The tungsten silicide film 3 can be deposited by various methods.For example, the tungsten silicide film 3 can be grown using chemical vapor deposition. As an example, a tungsten silicide film is laminated by causing a chemical vapor phase reaction between tungsten hexafluoride (WF6) gas and silane (SiH4) gas at a temperature in the range of 0°C to 800°C. In this reaction system, WF
, the lower the gas flow rate, the higher the SiH4 gas flow rate, and the higher the growth temperature, the excess silicon becomes;
(The value of X of WSix increases) The resistance value can be increased. As another example, a tungsten silicide film can be laminated by causing a chemical vapor phase reaction between WF gas and dichlorosilane (SiHxClg) gas at a temperature in the range of 200°C to 900°C. The advantage of the chemical vapor deposition (CVD) method is that the composition of the tungsten silicide film can be easily changed by changing the gas flow rate and growth temperature, and if the conditions are fixed, the film thickness and film quality can be excellently uniform. The main advantage is that it is possible to form a tungsten silicide film. As a method for forming tungsten silicide, in addition to the above-mentioned CVD method, a PVD method such as a sputtering method may also be used.
タングステンシリサイド膜３はシリコン酸化膜等の絶縁
膜２との密着性が余り良好でない（特にＣＶＤ法では密
着性が良好でない）ため、タングステンシリサイド膜３
を１１層する前に充分配慮する必要がある。例えば絶縁
膜２の表面を洗浄するとか軽くウェットエツチングする
等の前処理を行なうと良い、また、タングステンシリサ
イド膜３と絶縁膜２との間に多結晶シリコン（Ｐｏｌｙ
Ｓ＋）膜またはアモルファスシリコン（α−５ｉ）膜を
はさんでも良い＊ Ｐｏ１ｙＳ＋膜及びα−５ｉ膜はタ
ングステンシリサイド膜３とも！１！ｌ縁膜２とも密着
性が良好である為、密着性改善には非常に良い方法であ
る。Since the tungsten silicide film 3 does not have very good adhesion with the insulating film 2 such as a silicon oxide film (particularly the adhesion is not good with the CVD method), the tungsten silicide film 3
It is necessary to give sufficient consideration before adding 11 layers. For example, it is recommended to perform pretreatment such as cleaning the surface of the insulating film 2 or lightly wet etching it.
S+) film or amorphous silicon (α-5i) film may be sandwiched.* Po1yS+ film and α-5i film are also called tungsten silicide film 3! 1! This is a very good method for improving adhesion since it has good adhesion to both the edge film 2.
Ｐｏ１ｙＳｉ膜またはα−５ｉ膜をはさむ時は、薄膜抵
抗体のエツチングの際タングステンシリサイド膜だけで
なく Ｐｏ１ｙＳｉ膜またはα−３ｔ膜もエツチングす
る必要があるが、どちらもドライエツチングが可能な為
、エツチングの際特に問題はない。When sandwiching a Po1ySi film or α-5i film, it is necessary to etch not only the tungsten silicide film but also the Po1ySi film or α-3t film when etching the thin film resistor. There are no particular problems in this case.
タングステンシリサイド膜３を形成した後に熱処理を加
え抵抗体の抵抗を調整する事もできる。It is also possible to adjust the resistance of the resistor by applying heat treatment after forming the tungsten silicide film 3.
またタングステンシリサイド膜３と配線４の間に絶縁膜
をはさんで薄膜抵抗体３と配線４との接触を部分的に行
っても良い、特にこれが必要な場合は、配線層４とタン
グステンシリサイド膜３とのエツチング選択比が取れず
、配線４をエツチングする時にタングステンシリサイド
Ｂ４がエツチングされてしまう時である。配線層４のエ
ツチング速度がタングステンシリサイド膜３のエツチン
グ速度より充分速ければ、タングステンシリサイドｎり
３の上に直接配線Ｎ４を積層できる。絶縁膜をはさむ時
は、タングステンシリサイド膜３と配線４とのコンタク
トを取るための工程を追加しなければならない。上記の
絶縁膜はシリサイドの酸化膜でもよい事はもちろんであ
る。Alternatively, an insulating film may be sandwiched between the tungsten silicide film 3 and the wiring 4 to partially contact the thin film resistor 3 and the wiring 4. If this is particularly necessary, the wiring layer 4 and the tungsten silicide film may be brought into contact with each other partially. This is the case when the etching selectivity with respect to the etching pattern B4 cannot be obtained, and the tungsten silicide B4 is etched away when the wiring line 4 is etched. If the etching rate of the wiring layer 4 is sufficiently faster than the etching rate of the tungsten silicide film 3, the wiring N4 can be directly stacked on the tungsten silicide film 3. When sandwiching the insulating film, it is necessary to add a process for making contact between the tungsten silicide film 3 and the wiring 4. Of course, the above insulating film may be a silicide oxide film.
タングステンシリサイド膜３と配線４とのコンタクト抵
抗は、配線４がアルミニウム系であれば非常に小さくバ
ラツキも小さくできる。特に配線４を形成した後に適度
な熱処理（例えば４００℃２０分のアニール）を行えば
効果的である。The contact resistance between the tungsten silicide film 3 and the wiring 4 can be very small and the variation can be reduced if the wiring 4 is made of aluminum. In particular, it is effective to perform appropriate heat treatment (for example, annealing at 400° C. for 20 minutes) after forming the wiring 4.
薄膜抵抗体として必要な特性は、抵抗のバラツキが小さ
い事、平均抵抗温度係数（単位温度あたりの抵抗変化率
）が小さい事等である。The characteristics necessary for a thin film resistor include small variations in resistance and a small average temperature coefficient of resistance (rate of change in resistance per unit temperature).
第２図に７５原子％のシリコンを含むタングステンシリ
サイドを水素雰囲気中で４２０℃の熱処理をした場合の
シート抵抗値の温度特性を示す、平均抵抗Ａ度係数（Ｔ
ＣＤ）は＋４００ｐｐｍ／”ｃであり、Ｎｉ−Ｃｒ合金
のＴＣＤ±１１００ｐｐ／℃以内に比べると若干劣るが
、Ｃｒ−３ｉＯ合金のＴ ＣＤ ＋２００〜−４００ｐ
ｐｍ／’Ｃに対して何ら遜色がなく、充分に抵抗体とし
て適用し得る。Figure 2 shows the average resistance A degree coefficient (T
CD) is +400ppm/"c, which is slightly inferior to the TCD of Ni-Cr alloy, which is within ±1100pp/℃, but the TCD of Cr-3iO alloy is +200 to -400p.
It has no inferiority to pm/'C and can be fully applied as a resistor.
またタングステンシリサイドはドライエツチングが可能
な合金であり、特に反応性イオンエツチング（ＲＩ Ｅ
）を使うとより微細なパターンが高精度に加工され、第
１図の場合タングステンシリサイド膜厚が１２００人で
シート抵抗値が約１２８Ω／口であるが、より高いシー
ト抵抗値を持つＮｉ −Ｃｒ合金やＣｒ−３ｉＯ合金を
使った場合と同程度の抵抗値精度を持つ抵抗体を作成す
るのに同程度または以下の面積で済む。Additionally, tungsten silicide is an alloy that can be dry etched, especially reactive ion etching (RIE).
), finer patterns can be processed with high precision.In the case of Figure 1, the tungsten silicide film thickness is 1200mm and the sheet resistance value is about 128Ω/hole, but Ni-Cr which has a higher sheet resistance value. In order to create a resistor having the same degree of resistance accuracy as when using alloys or Cr-3iO alloys, the area required is about the same or less.
さらに薄膜抵抗体となるタングステンシリサイド膜はド
ライエツチングが可能なために、ウェットエツチングの
場合のような廃液の心配もなくなり、安全面、コストの
点で利点がある。Furthermore, since the tungsten silicide film that becomes the thin film resistor can be dry etched, there is no need to worry about waste liquid as in the case of wet etching, which is advantageous in terms of safety and cost.
本発明のタングステンシリサイド膜の薄膜抵抗体は種々
の半導体装置に使用できる０例えば、シリコン半導体や
ＧａＡｓ等の化合物半導体にも応用できる。The tungsten silicide thin film resistor of the present invention can be used in various semiconductor devices, and can also be applied to silicon semiconductors and compound semiconductors such as GaAs.
本発明は以上説明した様に、温度特性が良好でかつ抵抗
のバラツキも小さく、さらにパターン精度の良いドライ
エツチング法を用い加工できる、タングステンシリサイ
ド膜を使用しているので、高集積、高精度な抵抗体を有
する半導体装置を作成できる。As explained above, the present invention uses a tungsten silicide film that has good temperature characteristics, small resistance variations, and can be processed using a dry etching method with high pattern accuracy. A semiconductor device having a resistor can be created.
第１図は、本発明による薄膜抵抗体を示す断面図、第２
図は、本発明によって作成したタングステンシリサイド
膜のシート抵抗値の温度特性を示す図、第３図は、従来
のＮｉ −Ｃｒ合金を薄膜抵抗体として用いた半導体装
置の断面図、第４図は、従来の０ｒ−３ｉＯ合金をＦＪ
膜抵抗体として用いた半導体装置の断面図である。
１．１１・・・ （シリコン）基板
２．１２・・・絶縁膜
３・・・・・タングステンシリサイド膜４．１６・・・
配線
１３・・・・・不純物領域
１４・・・・・ＣＶＤシリコン酸化膜
１５・・・・・ゲート金属
１７・・・・・Ｎｉ−Ｃｒ膜
１８・・・・・Ｃｒ−３ｉＯ膜
以上
出願人 セイコー電子工業株式会社
代理人 弁理士 最 上 務（他１名）第３Ｖ！ＪFIG. 1 is a sectional view showing a thin film resistor according to the present invention, and FIG.
The figure shows the temperature characteristics of the sheet resistance value of the tungsten silicide film produced according to the present invention, FIG. 3 is a cross-sectional view of a semiconductor device using a conventional Ni-Cr alloy as a thin film resistor, and FIG. , the conventional 0r-3iO alloy is FJ
FIG. 2 is a cross-sectional view of a semiconductor device used as a film resistor. 1.11... (silicon) substrate 2.12... Insulating film 3... Tungsten silicide film 4.16...
Wiring 13...Impurity region 14...CVD silicon oxide film 15...Gate metal 17...Ni-Cr film 18...Cr-3iO film and above Applicant Seiko Electronic Industries Co., Ltd. Agent Patent Attorney Tsutomu Mogami (and 1 other person) 3rd V! J
Claims (3)
テンシリサイドを薄膜抵抗体として組み込んだ薄膜抵抗
体を有する半導体装置。(1) A semiconductor device having a thin film resistor incorporating tungsten silicide, which is an alloy of tungsten and silicon, as a thin film resistor.
て作成する事を特徴とする特許請求の範囲第１項記載の
薄膜抵抗体を有する半導体装置。(2) A semiconductor device having a thin film resistor according to claim 1, wherein the tungsten silicide is produced using a chemical vapor deposition method.
に多結晶シリコンあるいはアモルファスシリコンを用い
た特許請求の範囲第１項記載の薄膜抵抗体を有する半導
体装置。(3) A semiconductor device having a thin film resistor according to claim 1, in which polycrystalline silicon or amorphous silicon is used as a base of tungsten silicide, which is the thin film resistor.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10772487A JPS63272064A (en) | 1987-04-30 | 1987-04-30 | Semiconductor device with thin film resistor |
| FR8805521A FR2614726A1 (en) | 1987-04-30 | 1988-04-26 | THIN-FILM RESISTOR AND METHOD OF MANUFACTURE |
| DE19883814432 DE3814432A1 (en) | 1987-04-30 | 1988-04-28 | Thin-film resistor and method for fabricating it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10772487A JPS63272064A (en) | 1987-04-30 | 1987-04-30 | Semiconductor device with thin film resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63272064A true JPS63272064A (en) | 1988-11-09 |
Family
ID=14466340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10772487A Pending JPS63272064A (en) | 1987-04-30 | 1987-04-30 | Semiconductor device with thin film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63272064A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6441447B1 (en) * | 1998-02-12 | 2002-08-27 | Intersil Corporation | Co-patterning thin-film resistors of different compositions with a conductive hard mask and method for same |
| JP2013122946A (en) * | 2011-12-09 | 2013-06-20 | Seiko Instruments Inc | Semiconductor device |
-
1987
- 1987-04-30 JP JP10772487A patent/JPS63272064A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6441447B1 (en) * | 1998-02-12 | 2002-08-27 | Intersil Corporation | Co-patterning thin-film resistors of different compositions with a conductive hard mask and method for same |
| JP2013122946A (en) * | 2011-12-09 | 2013-06-20 | Seiko Instruments Inc | Semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5464500A (en) | Method for taper etching metal | |
| EP0288754B1 (en) | High rate tungsten cvd process for stress-free films | |
| JPS63301548A (en) | Manufacture of semiconductor device | |
| JPS637464B2 (en) | ||
| US6165862A (en) | Method of producing a thin film resistor | |
| JPS63272064A (en) | Semiconductor device with thin film resistor | |
| JPS59175726A (en) | Manufacture of semiconductor device | |
| JPS584975A (en) | Manufacture of semiconductor device | |
| US11011387B2 (en) | Wet etching of samarium selenium for piezoelectric processing | |
| JPS6029222B2 (en) | Method for manufacturing solid-state electronic devices | |
| JPS63316467A (en) | Semiconductor device with thin film resistor and manufacture thereof | |
| JPS5918632A (en) | Formation of electrode of semiconductor device | |
| JPH0642484B2 (en) | Method for manufacturing semiconductor device | |
| JPH01268150A (en) | Semiconductor device | |
| JPH08138461A (en) | Manufacture of substrate provided with dielectric thin film | |
| JPS62265718A (en) | Manufacture of semiconductor device | |
| JPS63281443A (en) | Manufacture of semiconductor device | |
| JPH0786004A (en) | Method of manufacture thin film resistor material and thin film resistor | |
| JPS624317A (en) | Manufacture of semiconductor integrated circuit | |
| JPH02114641A (en) | Manufacture of semiconductor device | |
| JPH0513364A (en) | Manufacture of semiconductor device | |
| JPH0484422A (en) | Formation of fine metal wiring | |
| JPS6058586B2 (en) | Wiring formation method | |
| JPS60227459A (en) | Integrated circuit device | |
| JPH07245303A (en) | Manufacture of metallic thin film resistor |