JPS63272030A - Method of forming pattern - Google Patents
Method of forming patternInfo
- Publication number
- JPS63272030A JPS63272030A JP62104585A JP10458587A JPS63272030A JP S63272030 A JPS63272030 A JP S63272030A JP 62104585 A JP62104585 A JP 62104585A JP 10458587 A JP10458587 A JP 10458587A JP S63272030 A JPS63272030 A JP S63272030A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- resist
- photofading
- coloring matter
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 18
- 150000001875 compounds Chemical class 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims abstract description 9
- 238000000206 photolithography Methods 0.000 claims abstract description 3
- 238000007687 exposure technique Methods 0.000 claims 1
- 238000011161 development Methods 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 6
- 239000010453 quartz Substances 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 230000009467 reduction Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 238000004040 coloring Methods 0.000 abstract 4
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 22
- 239000000126 substance Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000005562 fading Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000002845 discoloration Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000001540 azides Chemical class 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- SQDFHQJTAWCFIB-UHFFFAOYSA-N n-methylidenehydroxylamine Chemical compound ON=C SQDFHQJTAWCFIB-UHFFFAOYSA-N 0.000 description 1
- -1 naphthoquinone diazide sulfonic acid ester Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、高密度の半導体装置等の製造におけるホトリ
ソグラフィ工程で有用なパターン形成方法に係わる。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a pattern forming method useful in a photolithography process in the manufacture of high-density semiconductor devices and the like.
（従来の技術）
ＬＳＩ、ＶＬＳＩ等の半導体集積回路の高集積化に伴い
、素子、配線等の寸法が一層微細化される傾向にある。(Prior Art) As semiconductor integrated circuits such as LSI and VLSI become highly integrated, the dimensions of elements, wiring, etc. tend to become smaller.
このため、素子や配線等の寸法精度は極めて厳格に制御
されることが要求されている。こうした半導体集積回路
の生産には、量化性に優れた結像投影方式の紫外線露光
技術（波長＝３００〜４５０ｎ■）が汎用されている。For this reason, it is required that the dimensional accuracy of elements, wiring, etc. be extremely strictly controlled. In the production of such semiconductor integrated circuits, an imaging projection type ultraviolet exposure technology (wavelength = 300 to 450 nm), which is excellent in quantification, is widely used.
しかしながら、かかる技術は集積回路の高密度化に対応
する上で、露光装置の解像性の向上と、微細パターンの
形成という課題を内包している。この課題を克服するた
めにレジスト材料の面から様々な研究開発が進められて
いる。However, this technique involves the problems of improving the resolution of the exposure device and forming fine patterns in response to the increasing density of integrated circuits. In order to overcome this problem, various research and development efforts are underway in terms of resist materials.
例えば、解像性を改善する目的で、レジスト膜上にｍ光
退色性物質を含有する感光性膜を設ける方法が提案され
ている。この方法は、パターンの照度分布を光退色性膜
を通過させることで変換させ、レジストに対しての光学
コントラストを見掛は上改善するものである。即ち、光
量が相対的に小さいシャドウ部分では退色量が小さく逆
にハイライト部分では退色量が大きい、従って、シャド
ウ部分に比較してハイライト部分の透過光量は相対的に
強まり、レジスト膜に対して見掛は上光学コントラスト
が改善されたことになる。For example, for the purpose of improving resolution, a method has been proposed in which a photosensitive film containing a photobleaching substance is provided on a resist film. This method changes the illuminance distribution of a pattern by passing it through a photobleachable film, and apparently improves the optical contrast with respect to the resist. In other words, the amount of discoloration is small in the shadow areas where the amount of light is relatively small, and the amount of discoloration is large in the highlight areas.Therefore, the amount of transmitted light in the highlight areas is relatively strong compared to the shadow areas, and the amount of discoloration is large in the highlight areas. This results in an apparent improvement in optical contrast.
この光学コントラスト改善方法を効果的に行なうには、
退色性物質は次の条件を満す必要がある。To effectively perform this optical contrast improvement method,
The fading substance must meet the following conditions.
■レジストを感光させる光線を充分吸収しつつ退色する
こと、■退色速度がレジストの感光速度に近いこと、■
退色後、充分透明な材料に変化することである。上述し
た光学コントラストを改善する方法としては、具体的に
特開昭５４−６４９７１号公報や特開昭５４−７０７６
１号公報に記載されたネガ型レジスト膜上に光退色性の
ポジ型レジスト膜を設ける方法が知られている。しかし
この場合はポジ型レジストの吸光係数が小さいため、シ
ャドウ部分の光線を充分に遮光できないのみならず、レ
ジストの膜厚を厚くすれば遮光能は向上するが、像はボ
ケるため、解像性は逆に悪化する。また、特開昭５９−
１０４６４２号公報には、退色性物質としてアリールニ
トロンが記載されている。この場合には、吸光係数が大
きいため感光性膜を薄くすることができ、解像性が改善
されるものの、アリールニトロンは有機溶媒を使用しな
ければならず、その結果、レジストとの間に中間層を設
けることやレジストの現像前に感光性膜を剥離すること
など製造工程を繁雑ならしめる問題がある。■ Fading while absorbing enough light to expose the resist; ■ Fading speed is close to the photosensitive speed of the resist; ■
After fading, the material changes to a fully transparent material. As a method for improving the above-mentioned optical contrast, specifically, Japanese Patent Application Laid-open No. 54-64971 and Japanese Patent Application Laid-Open No. 54-7076
A method of providing a photobleachable positive resist film on a negative resist film is known, as described in Japanese Patent No. 1. However, in this case, because the absorption coefficient of the positive resist is small, it is not only not possible to sufficiently block the light rays in the shadow area, but also the light blocking ability can be improved by increasing the thickness of the resist film, but the image will be blurred and the resolution will be reduced. On the contrary, sex worsens. Also, JP-A-59-
104642 describes arylnitrone as a color fading substance. In this case, although the high extinction coefficient allows the photosensitive film to be made thinner and improves resolution, arylnitrones require the use of organic solvents, and as a result, There are problems in that the manufacturing process is complicated, such as providing an intermediate layer and peeling off the photosensitive film before developing the resist.
（発明が解決しようとする問題点）
本発明の目的は前記した従来技術の問題点を解消し、良
好な遮光性及び安定性を有する光退色性色素フィルター
を用いて簡易な方法により微細なパターンを寸法精度良
く、かつ安定に形成するパターン形成方法を提供しよう
とするものである。(Problems to be Solved by the Invention) The purpose of the present invention is to solve the problems of the prior art described above, and to form fine patterns by a simple method using a photobleachable dye filter having good light shielding properties and stability. The purpose of the present invention is to provide a pattern forming method that stably forms a pattern with high dimensional accuracy.
（問題点を解決するための手段）
本発明は光退色性感光膜を直接ホトレジスト上に塗布し
て形成するという従来技術と異なり光退色性色素を含む
フィルターを独立して形成し露光時にホトレジストに密
着させてパターン形成を行なうものである。光退色性色
素はフィルター基板中に分散させてもよいし、また基板
上に薄膜として形成してもよい、但し集積回路のパター
ン露光に一般的に使用される光線（水銀灯）は吸収が３
００〜４５０ｎｍにあるため、この領域で光学的に透明
であるような材料がフィルター基板として必須の要件で
ある。これらの材料として例えば石英、硼硅酸ガラス、
アクリル樹脂、ポリスチレンなどが利用できる。(Means for Solving the Problems) Unlike the conventional technology in which a photobleachable photosensitive film is directly coated onto a photoresist, the present invention forms a filter containing a photobleachable dye independently and coats the photoresist at the time of exposure. A pattern is formed by bringing them into close contact. The photobleachable dye may be dispersed in the filter substrate or formed as a thin film on the substrate, although the light beam commonly used for pattern exposure of integrated circuits (mercury vapor lamps) has an absorption of 3.
00 to 450 nm, a material that is optically transparent in this range is an essential requirement for the filter substrate. Examples of these materials include quartz, borosilicate glass,
Acrylic resin, polystyrene, etc. can be used.
本発明になる光退色性感光膜は従来技術と異なり直接ホ
トレジスト上に塗布により形成されないため、ホトレジ
ストとの化学的なミキシングが皆無である。従ってあら
ゆるホトレジストとの組み合わせでも使用可能であり、
さらに、光退色性色素が油溶性、水溶性を問わず使用で
きるため材料の利用範囲が拡大するという長所を有する
。加えて、従来必要であったホトレジスト現像前の光退
色性感光膜、はく前工程が不要であり１通常の常層レジ
ストによるリングラフィと同じプロセスとすることがで
きる。Unlike the prior art, the photobleaching photosensitive film of the present invention is not formed by coating directly on the photoresist, so there is no chemical mixing with the photoresist. Therefore, it can be used in combination with any photoresist.
Furthermore, since the photobleachable dye can be used regardless of whether it is oil-soluble or water-soluble, it has the advantage that the range of use of the material is expanded. In addition, there is no need for a photobleachable photosensitive film before photoresist development and a pre-strip process, which were conventionally required, and the process can be the same as phosphorography using a normal regular resist.
本発明に用いる光退色性色素はフォトクロミック化合物
である。フォトクロミズムは光照射という外的刺激に対
して物質が固有の色相を可逆的に変化させる現象であり
、このような物質をフォトクロミック化合物という、さ
らに本発明に用いるフォトクロミック化合物は、その感
光波長域が３００〜４５０ｎ■でなければならない、な
ぜならば、集積回路のパターン露光等に一般的に使用さ
れろ水銀灯はこの領域の吸収効率が高くホトレジストの
感光波長もこれに合わせであるからである。フォトクロ
ミック化合物を用いることにより本発明になる光退色性
色素フィルターは反復使用が可能となる。露光によって
色相の変化したフィルターは、例えば加熱や他の波長の
光線照射などによって容易に元来の色相に戻る。このた
め保存性に優れ可逆性の高いフォトクロミック化合物を
用いて光退色性色糸フィルターを作製すればこれを露光
時にホトレジストに密着させるだけで他のレジストプロ
セスは通常のラインがそのまま使用できる。上記目的に
沿うようなフォトクロミック化合物の例として、スピロ
ピラン類、スチリル化合物、アリールニトロン化合物な
どがあげられる。The photobleachable dye used in the present invention is a photochromic compound. Photochromism is a phenomenon in which a substance reversibly changes its unique hue in response to an external stimulus such as light irradiation, and such a substance is called a photochromic compound.Furthermore, the photochromic compound used in the present invention has a photosensitive wavelength range of 300 nm. ~450 n■, because the mercury lamp commonly used for pattern exposure of integrated circuits has a high absorption efficiency in this region, and the photoresist's sensitive wavelength is also matched to this. By using a photochromic compound, the photobleachable dye filter of the present invention can be used repeatedly. A filter whose hue has changed due to exposure to light can easily return to its original hue by, for example, heating or irradiation with light of a different wavelength. For this reason, if a photobleachable colored thread filter is made using a photochromic compound that has excellent storage stability and high reversibility, it can be used as is in other resist processes by simply bringing it into close contact with the photoresist during exposure. Examples of photochromic compounds that meet the above purpose include spiropyrans, styryl compounds, and arylnitrone compounds.
本願のパターン形成方法について説明すれば、まず、半
導体ウェハやマスクブランク等の基板上にレジスト膜を
形成する。ここに用いるレジストは、格別限定されない
が、例えばナフトキノンジアジドスルホン酸エステル化
物とクレゾールノボラック樹脂からなるポジ型レジスト
、ビスアジド化合物を環化ポリイソプレンに配合したゴ
ム系ネガ型レジスト、アジドをポリビニルフェノール樹
脂やフェノールノボラック樹脂に溶解したネガ型レジス
トを挙げることができる。レジスト膜はプリベークした
後露光機にセットされる１次いで前述した本発明の光退
色性色素フィルターをレジスト膜に密着させパターン露
光を行なう、この時レジスト膜と光退色性術フィルター
の密着は、状況に応じてハードコンタクト、ソフトコン
タクト、プロキシミティいずれでも良い、この後レジス
ト膜を現像して所定のレジストパターンを形成する。To explain the pattern forming method of the present application, first, a resist film is formed on a substrate such as a semiconductor wafer or a mask blank. The resist used here is not particularly limited, but includes, for example, a positive resist consisting of a naphthoquinone diazide sulfonic acid ester and a cresol novolak resin, a rubber-based negative resist consisting of a bisazide compound blended with cyclized polyisoprene, a polyvinylphenol resin or azide. Mention may be made of negative resists dissolved in phenolic novolac resins. After the resist film is prebaked, it is set in an exposure machine.Next, the photobleachable dye filter of the present invention described above is brought into close contact with the resist film and pattern exposure is performed.At this time, the close contact between the resist film and the photobleachable dye filter depends on the situation. Depending on the situation, hard contact, soft contact, or proximity may be used. After that, the resist film is developed to form a predetermined resist pattern.
（作 用）
本発明の光退色性色素フィルターは吸収帯が３００〜４
５０ｎ鳳にあるフォトクロミック化合物を配合している
ため、集積回路のパターン露光等に一般的に使用される
光線（水銀灯）のｇ線（波長４３６ｎｗ＋） 。(Function) The photobleachable dye filter of the present invention has an absorption band of 300 to 4.
Because it contains a photochromic compound in 50nm, it can withstand the g-line (wavelength 436nw+) of the light beam (mercury lamp) commonly used for pattern exposure of integrated circuits.
ｈ線（波長４０５ｎｍ）、 １ｉｌｌ （波長３６５ｎ
ｍ）の吸収効率が高く、極めて効果的にマスクのシャド
ウ部を遮光し得る。h-line (wavelength 405nm), 1ill (wavelength 365nm)
The absorption efficiency of m) is high, and the shadow portion of the mask can be extremely effectively shielded from light.
しかして光退色性色素フィルターはレジスト膜から独立
しているため、生成時の両者のミキシングやインタレイ
ヤー形成による過度なオーバーハングの心配がなくレジ
スト現像前の感光膜の処理といったプロセス上の繁雑さ
も不要である。However, since the photobleachable dye filter is independent from the resist film, there is no need to worry about mixing the two during generation or excessive overhang due to interlayer formation, and there is no need to worry about complicated processes such as processing the photoresist film before resist development. Not necessary.
さらにこの光退色性色素フィルターはフォトクロミック
化合物の特性を生かして露光使用後、再生反復使用でき
る。Furthermore, this photobleachable dye filter can be recycled and used repeatedly after exposure by taking advantage of the characteristics of photochromic compounds.
本発明になる光退色性色素フィルターを用いて紫外線露
光を行なうとフィルターの露光部が光線を効率よく吸収
して退色し、充分に透明なパターンとなると共に、シャ
ドウ部の光線を充分に遮光できるため、該フィルター下
のレジスト膜にマスクに忠実なパターン露光を行なうこ
とができる。When exposed to ultraviolet light using the photobleachable dye filter of the present invention, the exposed part of the filter efficiently absorbs the light and fades, resulting in a sufficiently transparent pattern and can sufficiently block the light in the shadow part. Therefore, pattern exposure can be performed on the resist film under the filter in a manner faithful to the mask.
従って、この後の現像処理によりマスクパターンに忠実
な微細レジストパターンを高精度で形成することができ
る。Therefore, by the subsequent development process, a fine resist pattern faithful to the mask pattern can be formed with high precision.
（実施例） 以下、本発明の実施例について詳細に説明する。(Example) Examples of the present invention will be described in detail below.
本発明のパターン形成方法を実施するには、第１図に示
すような、パターン露光装置を用いて行なわれる。すな
わち、光源１からの光２を集光レンズ３で集光し、所定
のパターン４得るためのマスク（レチクル）５と縮小投
影レンズ６を介して。To carry out the pattern forming method of the present invention, a pattern exposure apparatus as shown in FIG. 1 is used. That is, light 2 from a light source 1 is condensed by a condenser lens 3, and then passed through a mask (reticle) 5 and a reduction projection lens 6 to obtain a predetermined pattern 4.
ウェハ７上にパターンを投影する。ウェハ７は、ウェハ
ステージ８に載置され、ステップ駆動および合わせ移動
用モータ９で所定の位置に調整し。A pattern is projected onto the wafer 7. The wafer 7 is placed on a wafer stage 8 and adjusted to a predetermined position by a step drive and alignment movement motor 9.
複数のパターンが露光されるようになっている。Multiple patterns are exposed.
そして、このウェハ７の上には光退色性色素フィルター
１０が設けられている。A photobleaching dye filter 10 is provided on the wafer 7.
次に示す各々の具体的実施例は、このウェハ７および光
退色性色素フィルター１０について説明する。Each of the following specific examples describes the wafer 7 and the photobleachable dye filter 10.
実施例１
シリコンウェハ上にポジ型レジスト（東京応化工業製商
品名： ０ＦＰＲ−８００）を回転塗布し、ベークして
厚さ１．５−のレジスト膜を形成した。Example 1 A positive resist (trade name: 0FPR-800, manufactured by Tokyo Ohka Kogyo) was spin-coated on a silicon wafer and baked to form a resist film with a thickness of 1.5 mm.
次いで、１，２．３−トリメチルスピロ〔インドリノ−
２，２′−ベンゾビラン〕−８′−カルボキシリックア
シッドを石英基板上に蒸着させて得られた光退色性色素
フィルターをレジスト膜に密着させて開口数０．３５、
波長４３６ｎｍの５対１縮少投影露光装置により露光し
、現像してレジストパターンを形成し、顕微鏡観察によ
り解像性を調べた。その結果、良好な断面形状を維持し
ているレジストパターンの最小線幅は０．７７ｍであり
極めて微細なレジストパターンを形成できることが確認
された。なお、本発明になる光退色性色素フィルターを
用いずに同様なパターニングを行なったものでは最小線
幅は１．２．ＩＪＩＩであった１本フィルターは露光後
無色透明であるが、１５０℃、６０秒の熱処理で薄紅色
の本来の色相に戻り、吸光度も初期状態の９９％に回復
している。この反復くりかえし使用。Then, 1,2,3-trimethylspiro[indolino-
A photobleaching dye filter obtained by vapor-depositing 2,2'-benzobilane]-8'-carboxylic acid on a quartz substrate was attached to the resist film to form a numerical aperture of 0.35.
It was exposed to light using a 5:1 reduction projection exposure device with a wavelength of 436 nm, developed to form a resist pattern, and its resolution was examined by microscopic observation. As a result, it was confirmed that the minimum line width of a resist pattern that maintained a good cross-sectional shape was 0.77 m, and that an extremely fine resist pattern could be formed. Note that when similar patterning was performed without using the photobleachable dye filter of the present invention, the minimum line width was 1.2. One IJII filter was colorless and transparent after exposure, but after heat treatment at 150°C for 60 seconds, it returned to its original light pink hue, and its absorbance also returned to 99% of its initial state. Use this repeatedly.
によっての特性劣化は少くとも１０回までは認められて
いない。No characteristic deterioration was observed after at least 10 cycles.
実施例２
α−（４−ジブチルアミノフェニル）−Ｎ−（４−メト
キシカルボニル、３−メチルフェニル）ニトロンのキシ
レン溶液を石英ウェハ上に回転塗布して光退色性色素フ
ィルターを形成した以外は実施例１と同様な方法により
試料を作製した。解像性を調べた結果、良好な断面形状
を維持しているレジストパターンの最小線幅は０．７．
であった。Example 2 Same as above except that a xylene solution of α-(4-dibutylaminophenyl)-N-(4-methoxycarbonyl, 3-methylphenyl)nitrone was spin-coated onto a quartz wafer to form a photobleachable dye filter. A sample was prepared in the same manner as in Example 1. As a result of examining the resolution, the minimum line width of a resist pattern that maintains a good cross-sectional shape is 0.7.
Met.
なお、本感光剤溶液を直接レジスト上に塗布した場合に
は現像前にはく離する必要があり工程数が増加する。さ
らに他のレジスト（例えば富士ハントエレクトロニクス
テクノロジー社１ＩＨＰＲ−１１８２）に本感光剤溶液
を塗布した場合には両者のミキシングが起り中間層を間
に設ける必要がある等、レジストによっては更に工程が
繁雑になる。Note that when this photosensitive agent solution is applied directly onto the resist, it must be peeled off before development, which increases the number of steps. Furthermore, when this photosensitizer solution is applied to other resists (for example, Fuji Hunt Electronics Technology Co., Ltd. 1IHPR-1182), mixing of the two occurs and it is necessary to provide an intermediate layer between them, making the process even more complicated depending on the resist. Become.
実施例３
２−（３’−力ルボキシ−４′−ヒドロキシスチリル）
−Ｎ−メチルピリジウムクロリドの水溶液を石英ウェハ
上に回転塗布して光退色性色素フィルターを形成し実施
例１と同様のポジレジストに密着させ開口数０．３５、
波長３６５ｎｍのｌＯ対対線縮少投影露光装置より露光
し現像してレジストパターンを形成し解像性を調べたと
ころ良好な断面形状を維持しているレジストパターンの
最小線幅は０．６ｐであった。なお１本感光液をレジス
ト上に直接塗布してフィルターを形成した場合現像後の
パターンがオーバーハングを呈しており、インターレイ
ヤーの形成が認められた。Example 3 2-(3'-hydroxy-4'-hydroxystyryl)
-A photobleachable dye filter was formed by spinning an aqueous solution of -N-methylpyridium chloride onto a quartz wafer, and the filter was adhered to the same positive resist as in Example 1, with a numerical aperture of 0.35.
A resist pattern was formed by exposure and development using a 1O2 line reduction projection exposure device with a wavelength of 365 nm, and the resolution was examined. The minimum line width of a resist pattern that maintained a good cross-sectional shape was 0.6p. there were. In addition, when a filter was formed by applying one photosensitive solution directly onto the resist, the pattern after development exhibited an overhang, and the formation of an interlayer was observed.
以上説明した通り、本発明のパターン形成方法によれば
、従来必要としていた光退色性色素感光膜の塗布及びは
く離といった工程を必要せず、従ってレジストとのミキ
シングやインターレイヤー形成の懸念がない、さらに光
退色性色素フィルターは再生反復使用が可能であり、極
めて実用性に富んで、マスクパターンに忠実な微細レジ
ストパターンを高精度で形成し得るパターン形成方法を
提供できる。As explained above, the pattern forming method of the present invention does not require the steps of coating and peeling off a photobleachable dye photosensitive film, which were required in the past, and therefore there is no concern about mixing with the resist or forming an interlayer. Furthermore, the photobleachable dye filter can be reproduced and used repeatedly, and is extremely practical, providing a pattern forming method capable of forming a fine resist pattern faithful to a mask pattern with high precision.
晩１図は本発明に゛よるパターン形成方法を実施例する
装置の例を示す概念図である。
７・・・ウェハ
ｌＯ・・・光退色性色素フィルター
代理人 弁理士 則 近 憲 佑
同 松山ｑ之
第 １ 図FIG. 1 is a conceptual diagram showing an example of an apparatus for carrying out the pattern forming method according to the present invention. 7...Wafer lO...Photobleachable dye filter Representative Patent attorney Noriyuki Chika Yusuke Matsuyama Figure 1
Claims (3)
グラフィ工程において、ホトレジストに密着させた光退
色性色素フィルターを介してマスクパターンを転写する
ことを特徴とするパターン形成方法。(1) A pattern forming method characterized in that a mask pattern is transferred through a photobleachable dye filter in close contact with a photoresist in a photolithography process using an image projection type ultraviolet exposure technique.
物から成ることを特徴とする特許請求の範囲第１項記載
のパターン形成方法。(2) The pattern forming method according to claim 1, wherein the photobleachable dye filter is made of a photochromic compound.
４５０ｎｍにあり、ホトレジストの感光域と重なること
を特徴とする特許請求の範囲第２項記載のパターン形成
方法。(3) The sensitive wavelength range of photochromic compounds is 300~
3. The pattern forming method according to claim 2, wherein the wavelength is 450 nm and overlaps with the photosensitive region of the photoresist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62104585A JP2588192B2 (en) | 1987-04-30 | 1987-04-30 | Pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62104585A JP2588192B2 (en) | 1987-04-30 | 1987-04-30 | Pattern forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63272030A true JPS63272030A (en) | 1988-11-09 |
| JP2588192B2 JP2588192B2 (en) | 1997-03-05 |
Family
ID=14384512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62104585A Expired - Fee Related JP2588192B2 (en) | 1987-04-30 | 1987-04-30 | Pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2588192B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02250037A (en) * | 1989-03-23 | 1990-10-05 | Matsushita Electric Ind Co Ltd | Production of active matrix substrate and production of display device |
| EP0452966A2 (en) * | 1990-04-20 | 1991-10-23 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| KR20010104830A (en) * | 2000-05-16 | 2001-11-28 | 김남영 | Filter aplplication for slit discontinuity in CPW structure |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60179535A (en) * | 1984-02-28 | 1985-09-13 | Toshiba Corp | Brake device in elevator |
-
1987
- 1987-04-30 JP JP62104585A patent/JP2588192B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60179535A (en) * | 1984-02-28 | 1985-09-13 | Toshiba Corp | Brake device in elevator |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02250037A (en) * | 1989-03-23 | 1990-10-05 | Matsushita Electric Ind Co Ltd | Production of active matrix substrate and production of display device |
| EP0452966A2 (en) * | 1990-04-20 | 1991-10-23 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| KR20010104830A (en) * | 2000-05-16 | 2001-11-28 | 김남영 | Filter aplplication for slit discontinuity in CPW structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2588192B2 (en) | 1997-03-05 |
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