JP2653072B2 - Pattern formation method - Google Patents
Pattern formation methodInfo
- Publication number
- JP2653072B2 JP2653072B2 JP62309055A JP30905587A JP2653072B2 JP 2653072 B2 JP2653072 B2 JP 2653072B2 JP 62309055 A JP62309055 A JP 62309055A JP 30905587 A JP30905587 A JP 30905587A JP 2653072 B2 JP2653072 B2 JP 2653072B2
- Authority
- JP
- Japan
- Prior art keywords
- exposure
- light
- thin film
- pattern
- organic thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/105—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Optics & Photonics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は半導体テバイス製造等の微細加工技術におけ
るうちのフォトリソグラフィー技術に関するものであ
る。さらに詳しくは、フォトリソグラフィーにおけるレ
ジストパターン形成およびそのためのパターン形成材料
に関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photolithography technique in microfabrication techniques such as semiconductor device manufacturing. More specifically, the present invention relates to formation of a resist pattern in photolithography and a pattern forming material therefor.
従来の技術 近年、半導体デバイス製造技術の発展にともない、フ
ォトリソグラフィー技術も0.5ミクロンオーダーの微細
加工技術が要望されるようになってきている。この0.5
ミクロンのオーダーを越える技術として、装置面では、
従来のステッパーの短波長化、高開口化が、また、新た
な装置として、エキシマレーザーステッパー、X線ステ
ッパー、あるいは、直接描画型電子ビーム露光装置が開
発されつつある。また、レジストプロセス技術において
も数々の方法が提案され試みられている。たとえば、多
層レジスト法(MLR法)、反射防止コーティング法(ARC
法)、コントラストエンハンス法(CEL法)、ポータブ
ルコンフォーマブル法(PCM法)、イメージリヴァーサ
ル法(IR法)等がある。2. Description of the Related Art In recent years, with the development of semiconductor device manufacturing technology, photolithography technology has been required to have a fine processing technology on the order of 0.5 μm. This 0.5
As a technology that exceeds the order of microns,
Exciter laser steppers, X-ray steppers, or direct writing electron beam exposure apparatuses are being developed as new apparatuses to shorten the wavelength and increase the aperture of conventional steppers. Also, various methods have been proposed and attempted in the resist process technology. For example, multilayer resist method (MLR method), anti-reflection coating method (ARC
Method, contrast enhancement method (CEL method), portable conformable method (PCM method), image reversal method (IR method), and the like.
発明が解決しようとする問題点 ところが、従来ステッパーの高開口化、短波長化にも
限界があり、X線ステッパーでのマスクの製作が難し
く、直接描画型電子ビーム露光装置ではスループットが
低い等の理由で、現在のところ、エキシマレーザーステ
ッパーが最も有望視されている。しかし、エキシマレー
ザーステッパーにも問題がある。次のレーリーの式で
表されるように、 R=kλ/NA …… R:解像度,k:定数(0.6〜0.8) λ:露光波長,NA:レンズの開口数 同一波長で解像度を良くしようとすれば、NAを大きく
しなければならないが、NAを大きくすると式に示され
るように焦点深度(F.D)が浅くなる欠点がある。Problems to be Solved by the Invention However, there is a limit in increasing the aperture and shortening the wavelength of a conventional stepper, making it difficult to manufacture a mask with an X-ray stepper, and having a low throughput with a direct writing type electron beam exposure apparatus. For that reason, excimer laser steppers are currently the most promising. However, excimer laser steppers also have problems. As represented by the following Rayleigh equation, R = kλ / NA …… R: resolution, k: constant (0.6 to 0.8) λ: exposure wavelength, NA: numerical aperture of lens To improve resolution at the same wavelength If this is the case, the NA must be increased, but as the NA is increased, there is a disadvantage that the depth of focus (FD) becomes shallow as shown in the equation.
F.D=λ/(NA)2 …… 一方、レジストプロセス技術でも前述したように数々
の方法が試みられているが、いずれの方法もフォトリソ
グラフィープロセスのおける焦点深度劣化をカバーする
効果はあるが、プロセスが複雑であったり、焦点深度拡
大効果が小さい等の問題があり、あまり実用的でなかっ
た。FD = λ / (NA) 2 … On the other hand, as described above, various methods have been tried in the resist process technology. All of the methods have an effect of covering the depth of focus degradation in the photolithography process, There were problems such as the complexity of the process and the small effect of increasing the depth of focus, which was not very practical.
すなわち、従来のレジストプロセス技術では、エキシ
マステッパーにおける短波長化、高開口化に伴う浅い焦
点深度に十分対処できるのではなかった。That is, the conventional resist process technology cannot sufficiently cope with the shallow depth of focus associated with a shorter wavelength and a larger aperture in an excimer stepper.
本発明は、以上述べたような従来レジストプロセスの
欠点に鑑み開発されたフォトレジストプロセス等のパタ
ーン形成およびそのためのパターン形成材料に関するも
のであり、エキシマレーザーステッパーのような焦点深
度の浅い露光装置の性能を十分発揮できるレジストプロ
セス技術を提供しようとするものである。The present invention relates to a pattern forming material such as a photoresist process developed in view of the above-described drawbacks of the conventional resist process and a pattern forming material therefor, and to an exposure apparatus having a small depth of focus such as an excimer laser stepper. An object of the present invention is to provide a resist process technology capable of sufficiently exhibiting performance.
問題点を解決するための手段 本発明のパターン形成方法は、半導体基板等の基板上
に、第一の露光により化学物質が変化する有機材料と、
第二の露光により化学物質が変化する有機材料を含む有
機塗膜材料を塗布し有機薄膜を形成する工程と、前記有
機薄膜の表面近傍を前記第一の露光で選択的に露光する
工程と、前記第二の露光で前記有機薄膜全面を露光する
工程と、前記露光された有機薄膜を現像してパターンを
形成するものである。Means for solving the problems The pattern forming method of the present invention, on a substrate such as a semiconductor substrate, an organic material whose chemical substance changes by the first exposure,
A step of applying an organic coating material containing an organic material whose chemical substance changes by the second exposure to form an organic thin film, and a step of selectively exposing the vicinity of the surface of the organic thin film by the first exposure, A step of exposing the entire surface of the organic thin film by the second exposure, and a step of developing the exposed organic thin film to form a pattern.
また、本発明に用いるパターン形成材料である有機塗
膜材料は、主組成物がアルカリ可溶性樹脂からなり、さ
らに、第一の露光の波長で化学変化する芳香族アジド化
合物からなる有機材料と、第二の露光の波長で化学変化
するジアゾ化合物からなる有機材料とを含んだものであ
る。Further, the organic coating material which is a pattern forming material used in the present invention, an organic material whose main composition is composed of an alkali-soluble resin, and furthermore, an organic material composed of an aromatic azide compound which chemically changes at the wavelength of the first exposure, And an organic material composed of a diazo compound that chemically changes at the wavelength of the second exposure.
作用 本発明のパターン形成方法およびパターン形成材料
は、MLR法,CEL法,PCM法,IR法のすべての長所のみを兼ね
備えたレジストプロセスを可能とするものである。すな
わち、第一の露光工程では有機薄膜の表面近傍のみを使
用し、選択的にたとえば遠紫外光(例としてKrFエキシ
マレーザー光;248nm)で露光し、前記有機薄膜の表面の
みを変性する。ここで、前記変性された部分は第二の露
光の波長を吸収する性質を有している。ついで、第二の
露光として有機薄膜に対し透過性の良い波長を有する光
(例として、g線;436nm)で全面を露光し、すでに第一
の露光で変性している部分のみを残して有機薄膜を現像
除去することを特徴とする。つまり、本発明のレジスト
パターン形成方法およびパターン形成材料を用いれば、
有機薄膜の表面近傍のごく薄い部分のみが第一の露光で
選択的に露光されるため、MLR法の長所を取り入れたこ
とになる。また、選択的に露光された部分が第二の露光
の波長を選択的に吸収することにより、CEL法における
密着マスク効果が発揮される。さらに、選択的に光吸収
パターンを有機薄膜上に形成することにより、PCM法の
長所も含むこととなる。さらにまた、第二の全面露光に
よりパターンを形成することによりIR法の効果も取り入
れることができる。Effects The pattern forming method and the pattern forming material of the present invention enable a resist process having only the advantages of the MLR method, the CEL method, the PCM method, and the IR method. That is, in the first exposure step, only the vicinity of the surface of the organic thin film is used, and selectively exposed to, for example, far ultraviolet light (for example, KrF excimer laser light; 248 nm) to modify only the surface of the organic thin film. Here, the modified portion has a property of absorbing the wavelength of the second exposure. Next, as the second exposure, the entire surface is exposed to light having a wavelength having a good transmittance to the organic thin film (for example, g-line; 436 nm), and only the portion which has already been denatured by the first exposure is left organic. The thin film is developed and removed. That is, by using the resist pattern forming method and the pattern forming material of the present invention,
Since only a very thin portion near the surface of the organic thin film is selectively exposed in the first exposure, the advantages of the MLR method are adopted. In addition, the selectively exposed portion selectively absorbs the wavelength of the second exposure, thereby exhibiting an adhesion mask effect in the CEL method. Further, by selectively forming the light absorption pattern on the organic thin film, the advantage of the PCM method is included. Furthermore, the effect of the IR method can be taken in by forming a pattern by the second overall exposure.
したがって、本方法のパターン形成方法およびパター
ン形成材料は、超微細なパターン形成、たとえば、サブ
ミクロンパターン形成以下の領域で特にその効果は大な
るものがある。Therefore, the effect of the pattern forming method and the pattern forming material of the present method is particularly large in a region where the pattern formation is very fine, for example, in the region of submicron pattern formation or less.
実施例 以下に本発明のパターン形成方法およびパターン形成
材料の実施例を工程断面図でもって説明する。EXAMPLES Hereinafter, examples of the pattern forming method and the pattern forming material of the present invention will be described with reference to process cross-sectional views.
まず、第1図に示すように、任意の基板(たとえば、
半導体基板)1上に主組成物がアルカリ可溶性樹脂(た
とえば、フェノールノボラック樹脂)からなり、感光剤
として、ジアゾ化合物(たとえば、1、2−ナフトキノ
ンジアジドスルフォン酸クロライド)と、芳香族アジド
化合物(たとえば、2−フェニルアミノ−5−アジド安
息香酸)とを含む有機塗布材料を1〜2ミクロンの厚み
でコートし有機薄膜2を形成する。つぎに、第1の露光
として遠紫外光(たとえば、KrFエキシマレーザー光)
3を用いて選択的に露光し、前記有機薄膜2の表面近傍
を選択的に露光する(第2図)。ここで、4は選択露光
を行うためのフォトマスクである。このとき、有機薄膜
2を形成している主組成物は、遠紫外光を大部分吸収す
るため、有機薄膜2の0.1〜0.2ミクロン程度の厚さの表
面層のみ選択的にパターン状に露光され、表面のみに極
めて薄い露光部5が形成される。したがって、この工程
で多層レジストと同じ様に、薄いレジストを重ねて塗布
し上層レジストのみを選択的に露光するのと同じ効果が
得られる。すなわち、焦点深度の浅い高解像度の露光を
装置を使用でき、高解像度でシャープな0.5ミクロン以
下の微細パターンが得られる(第3図)。First, as shown in FIG. 1, an arbitrary substrate (for example,
The main composition is composed of an alkali-soluble resin (for example, phenol novolak resin) on a semiconductor substrate 1, and a diazo compound (for example, 1,2-naphthoquinonediazidosulfonic acid chloride) and an aromatic azide compound (for example, , 2-phenylamino-5-azidobenzoic acid) to form an organic thin film 2 having a thickness of 1 to 2 μm. Next, as the first exposure, far ultraviolet light (for example, KrF excimer laser light)
3 to selectively expose the vicinity of the surface of the organic thin film 2 (FIG. 2). Here, reference numeral 4 denotes a photomask for performing selective exposure. At this time, since the main composition forming the organic thin film 2 largely absorbs far ultraviolet light, only the surface layer of the organic thin film 2 having a thickness of about 0.1 to 0.2 μm is selectively exposed in a pattern. Thus, an extremely thin exposed portion 5 is formed only on the surface. Therefore, in this step, as in the case of the multi-layer resist, the same effect can be obtained as in the case where a thin resist is overlaid and applied and only the upper resist is selectively exposed. That is, the apparatus can be used for high-resolution exposure with a small depth of focus, and a high-resolution and sharp fine pattern of 0.5 μm or less can be obtained (FIG. 3).
ここで、芳香族アジド化合物(たとえば、2−フェニ
ルアミノ−5−アジド安息香酸)は、遠紫外光(たとえ
ば、エキシマレーザー光)で光化学反応し、その色は、
露光時間に応じて緑色から黒色に変化する。すなわち、
前記表面のみの極めて薄い露光部5は、前記化合物の発
色により着色部6を形成する。このとき、着色部6は、
少なくとも450nm以下の波長の光はすべて吸収する(第
4図)。したがって、第2の露光で前述の遠紫外光より
長波長の光7たとえば450nm以下の波長の光(例として
g線436nm)を用いて全面露光すれば、有機薄膜2の無
着色部8のみ選択的に露光したことになる(第5図)。
すなわち、この工程で、CEL法とPCM法とIR法の3つの効
果が一度に取り入れられたことになる。Here, the aromatic azide compound (for example, 2-phenylamino-5-azidobenzoic acid) undergoes a photochemical reaction with far ultraviolet light (for example, excimer laser light), and its color becomes
The color changes from green to black according to the exposure time. That is,
The extremely thin exposed portion 5 only on the surface forms a colored portion 6 by coloring of the compound. At this time, the coloring portion 6
All light having a wavelength of at least 450 nm or less is absorbed (FIG. 4). Therefore, if the entire exposure is performed in the second exposure using light 7 having a wavelength longer than the above-mentioned far ultraviolet light, for example, light having a wavelength of 450 nm or less (for example, g-line 436 nm), only the uncolored portion 8 of the organic thin film 2 is selected. This means that the exposure has been completed (FIG. 5).
That is, in this process, the three effects of the CEL method, the PCM method, and the IR method have been incorporated at once.
最後に、有機薄膜を現像液(たとえば、4級アミン化
合物テトラメチルアンモニウムハイドロオキサイド等の
水溶液)で現像することにより無着色部8のみが除去さ
れ、着色部6のみレジストパターン9が残る。IR法と同
じくマスクパターンと反対の0.5ミクロン程度の高解像
度パターンが得られる(第6図)。Finally, by developing the organic thin film with a developing solution (for example, an aqueous solution of a quaternary amine compound such as tetramethylammonium hydroxide), only the uncolored portion 8 is removed, and the resist pattern 9 remains only in the colored portion 6. As with the IR method, a high-resolution pattern of about 0.5 μm opposite to the mask pattern can be obtained (FIG. 6).
なお、以上の実施例においては、第1の露光の光とし
てKrFエキシマレーザー光、第2の露光の光としてg線
を用いる例を示したが、有機塗布材料を形成している感
光剤であるジアゾ化合物および芳香族アジド化合物の光
吸収域の組合せにより第1、第2の露光の波長は任意に
変えることができる。In the above embodiments, an example in which KrF excimer laser light is used as light for the first exposure and g-ray is used as light for the second exposure has been described. However, a photosensitive agent forming an organic coating material is used. The wavelengths of the first and second exposures can be arbitrarily changed depending on the combination of the light absorption ranges of the diazo compound and the aromatic azide compound.
また、露光された部分のみ選択的に着色部が形成され
る例を示したが、逆に、あらかじめ全面着色部が形成さ
れた有機薄膜を用い、第1の露光の波長により有機薄膜
の表面近傍で着色部の化学変化が起こり、露光部のみ脱
色する方法を用いてもパターンが逆転することを除き、
同じ効果が得られることは明かである。Also, an example in which a colored portion is selectively formed only in an exposed portion has been described. Conversely, an organic thin film in which a colored portion is entirely formed in advance is used, and the vicinity of the surface of the organic thin film is determined by the wavelength of the first exposure. Except that the pattern is reversed even when using a method of decoloring only the exposed part,
It is clear that the same effect can be obtained.
さらに、第1の露光の光としてエキシマレーザー光に
限らず、X線、電子ビーム、イオンビーム等も使用可能
であるとともに、第2の露光の光としてはg線に限ら
ず、i線、可視光線、軟X線等であっても良い。Further, the light for the first exposure is not limited to the excimer laser light, but may be an X-ray, an electron beam, an ion beam, or the like. The light for the second exposure is not limited to the g-ray, but may be i-line, visible light, or the like. Light rays, soft X-rays and the like may be used.
本発明の方法では、パターン状の第1の露光には、有
機薄膜の表面部のみしか使用しないため、露光装置が高
開口化、短波長化され焦点深度が浅くなっても十分使用
可能となり、装置解像度を完全に発揮できる大なる効果
がある。In the method of the present invention, only the surface of the organic thin film is used for the first pattern exposure, so that the exposure apparatus can be sufficiently used even when the aperture is increased, the wavelength is shortened, and the depth of focus is reduced. There is a great effect that the device resolution can be fully exhibited.
すなわち、従来の多層レジスト(MLR法)プロセスに
比べ、塗布工程が1回で済む。さらに、現像工程も1回
で済むため、工程が大幅に簡略化される。That is, only one application step is required as compared with the conventional multilayer resist (MLR method) process. Furthermore, since the development process is performed only once, the process is greatly simplified.
また、従来のイメージリバース(IR法)プロセスに対
し本発明のパターン形成方法は熱処理工程が不必要であ
るため、プロセス安定性がよい。In addition, the pattern forming method of the present invention does not require a heat treatment step as compared with the conventional image reverse (IR method) process, so that the process stability is good.
さらに、本発明のパターン形成方法は、従来のコント
ラストエンハンス(CEL法)プロセスのようにレジスト
上面に光漂白膜を必要としないため、露光時間が大幅に
短縮され、コントラストも十分得られ、塗布工程も1回
で済む。Further, the pattern forming method of the present invention does not require a photobleaching film on the resist upper surface unlike the conventional contrast enhancement (CEL) process, so that the exposure time is greatly reduced and the contrast is sufficiently obtained. Only one time.
さらにまた、従来の反射防止コーティング(ARC法)
プロセスに比べ、有機薄膜表面付近しか露光されず、露
光の光は有機薄膜下部まで到達しないので、基板面より
の反射がなくパターン解像度が大幅に向上できる。Furthermore, conventional anti-reflective coating (ARC method)
Compared with the process, only the vicinity of the surface of the organic thin film is exposed, and the light for exposure does not reach the lower portion of the organic thin film.
さらに付け加えて、本発明のパターン形成方法は、従
来のポータブルコフォーマブル(PCM法)プロセスに比
べ、2層塗布することなく、レジスト表面に高いコント
ラストのパターン状の光吸収層を形成できるので、レジ
ストパターンの解像度を大幅に向上できる等々の効果が
ある。In addition, the pattern forming method of the present invention can form a high-contrast patterned light-absorbing layer on the resist surface without applying two layers, compared to the conventional portable coformable (PCM) process. There are effects such as the resolution of the resist pattern can be greatly improved.
発明の効果 以上のように、本発明のパターン形成方法およびパタ
ーン形成材料は、従来のフォトレジストプロセス技術に
比べて大幅な改良を行うことなく、焦点深度の浅い露光
装置たとえばエキシマレーザーステッパーのような装置
に適用して十分高い解像度が得られる特徴がある。した
がって、今後、半導体デバイスを始めとする各種の機器
で超微細加工が要求されるに際し、その効果は大なるも
のがある。Effect of the Invention As described above, the pattern forming method and the pattern forming material of the present invention can be applied to an exposure apparatus having a small depth of focus, such as an excimer laser stepper, without significantly improving the conventional photoresist process technology. There is a feature that a sufficiently high resolution can be obtained when applied to an apparatus. Therefore, when ultra-fine processing is required in various devices including semiconductor devices in the future, the effect thereof will be significant.
第1図〜第6図は、本発明の一実施例のパターン形成方
法を説明するための工程断面図である。 1……基板,2……有機薄膜,3……遠紫外光(たとえばエ
キシマレーザー光),4……フォトマスク,5……露光部,6
……着色部,7……第2の露光の光(たとえばg線光),8
……無着色部、9……レジストパターン。1 to 6 are process cross-sectional views for explaining a pattern forming method according to one embodiment of the present invention. DESCRIPTION OF SYMBOLS 1 ... board | substrate, 2 ... organic thin film, 3 ... far ultraviolet light (for example, excimer laser light), 4 ... photomask, 5 ... exposure part, 6
... Colored section, 7... Second exposure light (eg g-line light), 8
... Uncolored part, 9... Resist pattern.
Claims (6)
応して第2の露光を通さない物質に変化する有機材料と
第2の露光により化学物質が光反応して、その後現像処
理によりパターン形成可能になる有機材料とを含む有機
塗膜材料を1層塗布して有機薄膜を形成する工程と、前
記有機薄膜の表面近傍を前記第1の露光で選択的に露光
して第2の露光の光を通さない層を選択的に形成する工
程と、前記第2の露光で、前記有機薄膜を全面露光する
工程と、全面露光された前記有機薄膜を現像してパター
ン形成する工程を備えたことを特徴とするパターン形成
方法。An organic material which is converted into a substance which does not pass through the second exposure by a chemical reaction of the chemical substance by the first exposure on the substrate and the chemical substance by the second exposure, and thereafter the developing treatment Forming an organic thin film by applying one layer of an organic coating material containing an organic material capable of forming a pattern, and selectively exposing the vicinity of the surface of the organic thin film by the first exposure. Selectively forming a layer that does not allow the light of the exposure to pass, a step of exposing the entire surface of the organic thin film in the second exposure, and a step of forming a pattern by developing the organic thin film that has been entirely exposed. A pattern forming method, comprising:
波長よりも短いことを特徴とした特許請求の範囲第1項
に記載のパターン形成方法。2. The pattern forming method according to claim 1, wherein the wavelength of the first exposure light is shorter than the wavelength of the second exposure light.
ーザー光であることを特徴とする請求項の範囲第1項に
記載のパターン形成方法。3. The pattern forming method according to claim 1, wherein the light for the first exposure is excimer laser light in a far ultraviolet region.
応して第2の露光を通す物質に変化する有機材料と第2
の露光により化学物質が光反応して、その後現像処理に
よりパターン形成可能になる有機材料とを含む有機塗膜
材料を1層塗布して有機薄膜を形成する工程と、前記有
機薄膜の表面近傍を前記第1の露光で選択的に露光して
第2の露光の光を通す層を選択的に形成する工程と、前
記第2の露光で、前記有機薄膜を全面露光する工程と、
全面露光された前記有機薄膜を現像してパターン形成す
る工程を備えたことを特徴とするパターン形成方法。4. The method according to claim 1, further comprising the step of: reacting a chemical substance by a first exposure on the substrate with a photoreaction to change the organic substance into a substance which passes through the second exposure;
A step of applying an organic coating material including an organic material capable of forming a pattern by a development process after a chemical substance undergoes a photoreaction by exposure to form an organic thin film; Selectively forming a layer through which light of the second exposure passes by selectively exposing the first exposure, and exposing the entire surface of the organic thin film by the second exposure;
A pattern forming method, comprising a step of developing the organic thin film which has been entirely exposed to form a pattern.
波長よりも短いことを特徴とした特許請求の範囲第4項
に記載のパターン形成方法。5. The pattern forming method according to claim 4, wherein the wavelength of the first exposure light is shorter than the wavelength of the second exposure light.
ーザー光であることを特徴とする請求項の範囲第4項に
記載のパターン形成方法。6. The pattern forming method according to claim 4, wherein the light for the first exposure is excimer laser light in a far ultraviolet region.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62309055A JP2653072B2 (en) | 1987-12-07 | 1987-12-07 | Pattern formation method |
EP88301564A EP0282201B1 (en) | 1987-03-09 | 1988-02-24 | Pattern forming method |
DE3850151T DE3850151T2 (en) | 1987-03-09 | 1988-02-24 | Process for the production of samples. |
KR1019880002382A KR920003315B1 (en) | 1987-03-09 | 1988-03-08 | Pattern forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62309055A JP2653072B2 (en) | 1987-12-07 | 1987-12-07 | Pattern formation method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01149040A JPH01149040A (en) | 1989-06-12 |
JP2653072B2 true JP2653072B2 (en) | 1997-09-10 |
Family
ID=17988332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62309055A Expired - Lifetime JP2653072B2 (en) | 1987-03-09 | 1987-12-07 | Pattern formation method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2653072B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5015559A (en) * | 1988-07-26 | 1991-05-14 | Matsushita Electric Industrial Co., Ltd. | Process for forming a fine resist pattern |
DE69707325T2 (en) | 1996-02-26 | 2002-05-02 | Matsushita Electric Industrial Co., Ltd. | Imaging material and method |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8203521A (en) * | 1982-09-10 | 1984-04-02 | Philips Nv | METHOD FOR MANUFACTURING AN APPARATUS |
EP0193543B1 (en) * | 1984-08-13 | 1991-04-10 | Ncr Corporation | Process for forming a layer of patterned photoresist |
JPS62245251A (en) * | 1986-04-18 | 1987-10-26 | Fujitsu Ltd | Resist pattern forming method |
JP2553545B2 (en) * | 1987-03-09 | 1996-11-13 | 松下電器産業株式会社 | Pattern forming method |
-
1987
- 1987-12-07 JP JP62309055A patent/JP2653072B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH01149040A (en) | 1989-06-12 |
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