JPS63266826A - Semiconductor manufacturing equipment - Google Patents

Semiconductor manufacturing equipment

Info

Publication number
JPS63266826A
JPS63266826A JP9980187A JP9980187A JPS63266826A JP S63266826 A JPS63266826 A JP S63266826A JP 9980187 A JP9980187 A JP 9980187A JP 9980187 A JP9980187 A JP 9980187A JP S63266826 A JPS63266826 A JP S63266826A
Authority
JP
Japan
Prior art keywords
magnet
rotating
shaft
eccentrically
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9980187A
Other languages
Japanese (ja)
Inventor
Atsushi Nakahara
淳 中原
Shinichiro Matsuda
松田 伸一郎
Hideji Yamamoto
山本 秀治
Yutaka Kakehi
掛樋 豊
Hiromitsu Enami
弘充 榎並
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9980187A priority Critical patent/JPS63266826A/en
Publication of JPS63266826A publication Critical patent/JPS63266826A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain optimum conditions even when a plasma processing is altered by eccentrically displacing a magnet element attached to a sliding base, adjusting a distance between the element and a sample electrode, and eccentrically rotating the element. CONSTITUTION:A vacuum vessel is reduced under pressure to be evacuated to a predetermined pressure, and power is supplied between a counter electrodes 4 and a sample electrode 2 to generate a plasma of gas to be processed between the electrodes, thereby plasma processing a wafer 3. In this case, a strong plasma is generated by the operations of a magnetic field of a permanent magnet 5 and an electric field between the electrodes, the magnet 5 is eccentrically rotated to form a uniform plasma. Since the power applied between the electrodes is varied according to the film seed or the like of the wafer 3 to be processed, the magnet 5 is moved axially of a rotary shaft 11 in coincidence with the intensity of the electric field. In order to eccentrically displace the magnet 5 with respect to the center of the shaft 11, an eccentric motor 22 is driven to rotate a threaded shaft 21. In order to eccentrically rotate the magnet 5, a rotary motor 23 is driven to rotate the shaft 11. The distance between the magnet 5 and the electrode 2 is adjusted by rotating a threaded shaft 25 by driving an elevation motor 27.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体製造装置に係り、特番こ電界と磁界の作
用を利用してプラズマ処理するのに好適な半導体製造装
置。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor manufacturing apparatus, and is a semiconductor manufacturing apparatus suitable for plasma processing using the effects of an electric field and a magnetic field.

〔従来の技術〕[Conventional technology]

従来の装置は、例えば、特開昭59−18638号に記
載のように、真空容器と、この真空容器内に保持され一
方の面に被加工物を取着した保持体と、この保持体の一
方の向暑こ対向して配置された磁石と、この磁石を保持
体と平行な平向」−で偏心した状態で自転させなから公
転させる駆籾・彼構とを具備して、磁石によって保持体
に十分均一な磁場を与えることができるようにして、保
持体に取着された被加工物にエツチング加工を高精度に
行えるようにしたものがある。
A conventional apparatus, for example, as described in Japanese Patent Application Laid-open No. 59-18638, consists of a vacuum container, a holder held in the vacuum container with a workpiece attached to one surface, and the holder. It is equipped with magnets placed opposite to each other on one side, and a rice-driving structure that rotates the magnet eccentrically in a plane parallel to the holder and then revolves around it. Some devices are designed to apply a sufficiently uniform magnetic field to the holder so that a workpiece attached to the holder can be etched with high precision.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上記従来技術はエツチング条件が変わった場合について
エツチング加工を高精度に行えるようにする点について
配慮されておらず、エツチングの対象である材質の変更
およびプロセスの変更があった場合、最適な条件でエツ
チング加工を行うには磁石の設置位置も変える必要があ
るが。あらかじめ設定された偏心量で自、公転するのみ
であり1、〒1.ツチング条件が変わった場合に最適の
条件な得することができないという問題があった。
The above conventional technology does not take into account the need to perform etching with high precision when the etching conditions change, and when there is a change in the material to be etched or a change in the process, the etching process cannot be performed under optimal conditions. In order to perform the etching process, it is necessary to change the position of the magnet. It only revolves around itself with a preset amount of eccentricity. There is a problem in that it is not possible to obtain optimal conditions when the cutting conditions change.

本発明の目的は、プラズマ処理が変わった場合において
も、最適な条件を得ることのできる半導体製造装置を提
供することにある。
An object of the present invention is to provide a semiconductor manufacturing apparatus that can obtain optimal conditions even when plasma processing is changed.

〔問題点を解決するための手段〕 上記目的は、処理ガスが供給され所定圧力に減圧排気さ
れる真空容器と、真空容器内に設けられ試料を配置する
試料電極と、真空容器内の雰囲気に接し試料電極に対向
する対向電極と、対向電極の反試料電極側に隙間を有し
て設けた磁石要素と、礎石要素を取り付けたスライドベ
ースと、スライドベースを磁石要素の平面方向に移動自
在に支持する回転ベースと、回転ベースに取り付は回転
ベースの回転中心と同心に設けた回転軸と、回転軸に回
転を与える回転手段と、回転軸の軸方向に移動自在に設
けたボスと、回転軸の中心軸に対して傾斜させて設は一
端をボスに他端をスライドベー:X、Iこおのおの揺動
自在暑こ結合したロッドと、ボスを回転軸の軸方向に移
動させる第1の移動手段と、回転軸を軸方向に移動させ
る第2の移動手段とを具備することにより、達成される
[Means for solving the problem] The above purpose is to provide a vacuum container to which a processing gas is supplied and which is evacuated to a predetermined pressure, a sample electrode provided in the vacuum container to place a sample, and an atmosphere inside the vacuum container. A counter electrode that faces the contact sample electrode, a magnet element provided with a gap on the opposite sample electrode side of the counter electrode, a slide base with a cornerstone element attached, and a slide base that is movable in the plane direction of the magnet element. A rotating base to support, a rotating shaft mounted on the rotating base concentrically with the center of rotation of the rotating base, a rotating means for rotating the rotating shaft, and a boss provided movably in the axial direction of the rotating shaft; The rods are tilted with respect to the central axis of the rotating shaft, and one end is a boss and the other end is a slide bar. This is achieved by comprising a moving means and a second moving means for moving the rotating shaft in the axial direction.

〔作  用〕[For production]

第1の移動手段によってボスを回転軸の移動方向に移動
し、ロッドを介してスライドベースを回転ベースの案内
に沿って移動させ、これによってスライドベース番こ取
り付けた磁石要素を偏心させる。第2の移動手段によっ
て回転軸を軸方向に移・ 3 ・ 動させ、これによって磁石要素と試料電極との間の距離
間隔を調整する。回転手段によって回転軸を回転させ、
これによって磁石要素を偏心回転させる。磁石要素にこ
れらの動作をさせることによって、真空容器内で処理す
る試料の処理条件に合わせ、試料電極と対向電極との間
に発生するプラズマを最適な状態にすることができる。
The boss is moved in the direction of movement of the rotating shaft by the first moving means, and the slide base is moved along the guide of the rotating base via the rod, thereby decentering the magnetic element attached to the slide base. The rotation axis is moved axially by the second displacement means, thereby adjusting the distance interval between the magnet element and the sample electrode. Rotating the rotating shaft by the rotating means,
This causes the magnet element to rotate eccentrically. By causing the magnetic element to perform these operations, the plasma generated between the sample electrode and the counter electrode can be brought into an optimal state in accordance with the processing conditions of the sample to be processed within the vacuum container.

〔実 施 例〕〔Example〕

以下、本発明の一実施例を第1図から第3図により説明
する。
An embodiment of the present invention will be described below with reference to FIGS. 1 to 3.

第1図に示すように、真空容器は、この場合。In this case, the vacuum container is as shown in Figure 1.

チャンバー1とチャンバー1の上部に設けた対向電極4
とで形成され、チャンバー1の下部には試料であるウェ
ハ3を配置する試料電極2が取り付けである。対向電極
4内には図示しない処理ガスの供給源につながり、真空
容器内に処理ガスを導入するガス供給路6が設けである
。チャンバ−1下部には図示しない排気装置が接続しで
ある。なお、試料電極2および対向電極4は絶縁体を介
して取り付けである。
Chamber 1 and counter electrode 4 provided at the top of chamber 1
A sample electrode 2 on which a wafer 3 as a sample is placed is attached to the lower part of the chamber 1. A gas supply path 6 is provided in the counter electrode 4 to connect to a processing gas supply source (not shown) and to introduce the processing gas into the vacuum container. An exhaust system (not shown) is connected to the lower part of the chamber 1. Note that the sample electrode 2 and the counter electrode 4 are attached via an insulator.

、 4 。, 4.

対向電極4の裏面には、対向電極4に接触しないように
隙間を有して試料電極2に平行な面を有した磁石要素、
この場合は、永久磁石5が設けてあり、永久磁石5はス
ライドベース9の下面に取り付けである。
On the back surface of the counter electrode 4, a magnet element having a surface parallel to the sample electrode 2 with a gap so as not to contact the counter electrode 4;
In this case, a permanent magnet 5 is provided, and the permanent magnet 5 is attached to the lower surface of the slide base 9.

スライドベース9は第1図、第2図に示すように上部に
設けた回転ベース8の下面に設けたリニアガイド7にリ
ニアベアリング10を介して取り付けられ、リニアガイ
ド7に沿って試料型8!2に対し平行方向に移動可能に
しである。
As shown in FIGS. 1 and 2, the slide base 9 is attached via a linear bearing 10 to a linear guide 7 provided on the lower surface of a rotating base 8 provided above, and the sample mold 8! It is possible to move in a direction parallel to 2.

第1図に示すように、回転ベース8の中央部には回転軸
11が取り付けてあり、回転軸11の上部は軸受12を
介して上下ベース13に支持され、下部は軸受18を介
して偏心ベース19に支持される。軸受18はボス16
および軸受17を介して回転軸11を支持する。
As shown in FIG. 1, a rotating shaft 11 is attached to the center of the rotating base 8. The upper part of the rotating shaft 11 is supported by the upper and lower bases 13 via a bearing 12, and the lower part is eccentrically supported via a bearing 18. It is supported by a base 19. The bearing 18 is the boss 16
and supports the rotating shaft 11 via a bearing 17.

ボス16は軸受17を介して回転軸11の軸方向に移動
可能であり、ボス16とスライドベース9との間には第
2図および第3図に示すように傾斜を持たせ両端なロッ
ドエンド軸受14でそれぞれボス16およびスライドベ
ース9に対し揺動自在に取り付けたロッド15が設けら
れ、ボス16の移動によってロッド15を介しスライド
ベース9が連動可能となっている。
The boss 16 is movable in the axial direction of the rotating shaft 11 via a bearing 17, and between the boss 16 and the slide base 9 are inclined rod ends at both ends, as shown in FIGS. 2 and 3. A rod 15 is provided which is swingably attached to the boss 16 and the slide base 9 by bearings 14, respectively, and the slide base 9 can be interlocked with the movement of the boss 16 via the rod 15.

回転軸11の上部にはカプリングを介して、上下ベース
13上に設けた回転用モータnが取り付けである。回転
軸11を回転させる回転手段は、この場合、回転用モー
タ囚である。
A rotation motor n provided on the upper and lower bases 13 is attached to the upper part of the rotation shaft 11 via a coupling. In this case, the rotation means for rotating the rotation shaft 11 is a rotation motor.

上下ベース13は真空容器上憂こ設けた固定ベース冴に
取り付けた図示しないガイドによって回転軸11の軸方
向に移動可能に支持され、上下ベース13に設けたナツ
トがか固定ベース々に取り付けられたねじ軸251こ係
合し、上下ベース13が位置決めされる。ねじ軸5は上
下部が軸受を介して固定ベース夙に支持され、上端はカ
プリングを介して固定ベース冴に取り付けられた上下用
モータ4に連結しである。回転軸11を軸方向に移動さ
せる第2の移動手段は、これら上下ベース13.ナツト
か、ねじ軸におよび上下用モータnから成る。
The upper and lower bases 13 are movably supported in the axial direction of the rotating shaft 11 by guides (not shown) attached to fixed bases provided above the vacuum container, and nuts provided on the upper and lower bases 13 are attached to the fixed bases. The screw shaft 251 is engaged, and the upper and lower bases 13 are positioned. The screw shaft 5 is supported at its upper and lower parts by bearings on the fixed base, and its upper end is connected to the vertical motor 4 attached to the fixed base through a coupling. The second moving means for moving the rotating shaft 11 in the axial direction is the upper and lower bases 13 . It consists of a nut or screw shaft and a vertical motor.

偏心ベース19にはナツト加が設けてあり、固定ベース
冴と上下ベース13とにそれぞれ軸受公および四を介し
て上下部を支持されたねじ軸21にナツト加が係合し、
偏心ベース19が回転軸11の軸方向に位置決めされる
。ねじ軸ガの上端はカプリングを介して上下ベース13
に取り付けられた偏心用モータ221こ連結しである。
The eccentric base 19 is provided with a nut, which engages a screw shaft 21 whose upper and lower parts are supported by the fixed base 1 and the upper and lower bases 13 through bearings and 4, respectively.
An eccentric base 19 is positioned in the axial direction of the rotating shaft 11. The upper end of the screw shaft is connected to the upper and lower bases 13 via a coupling.
This is connected to the eccentric motor 221 attached to the.

ボス16を回転軸11の軸方向に移動させる第1の手段
は、これら偏心ベース19、ナツト頷、ねじ軸21およ
び偏心用モータnから成る。
A first means for moving the boss 16 in the axial direction of the rotary shaft 11 consists of the eccentric base 19, the nut nod, the screw shaft 21, and the eccentric motor n.

上記構成の装置により、真空容器内には図示しない処理
ガス供給装置によって供給される処理ガスをガス供給路
6を介して導入するとともに、図示しない排気装置によ
って所定圧力に減圧排気し、対向電極4と試料電極2と
の間に図示しない電源装置によって電力を供給して、電
極間に処理ガスのプラズマを発生させ、ウニ/13をプ
ラズマ処理する。
With the apparatus configured as described above, a processing gas supplied by a processing gas supply device (not shown) is introduced into the vacuum container via the gas supply path 6, and is evacuated to a predetermined pressure by an exhaust device (not shown). Electric power is supplied between the sample electrode 2 and the sample electrode 2 by a power supply device (not shown) to generate plasma of a processing gas between the electrodes, and the sea urchin/13 is plasma-treated.

この際、強いプラズマを永久磁石5り磁界と電極間の電
界との作用によって発生させるとともに、永久磁石5を
偏心回転させて均一なプラズマな形・ 7 ・ 成させる。また、処理するウェハ3の膜種等によって電
極間に印加する電力が変わり、このため電界の強さも変
わるので、電界の強さに合わせ永久磁石5を回転軸11
の軸方向に移動させ、最適な電界の関係を得るようにす
る。
At this time, strong plasma is generated by the action of the magnetic field of the permanent magnet 5 and the electric field between the electrodes, and the permanent magnet 5 is eccentrically rotated to form a uniform plasma shape. In addition, the power applied between the electrodes changes depending on the film type of the wafer 3 to be processed, and therefore the strength of the electric field also changes.
in the axial direction to obtain the optimum electric field relationship.

まず、永久磁石5を回転軸11の中心に対して偏心させ
るには、偏心用モータnを駆動しねじ軸21を回転させ
ることによって、偏心ベース19に設けたナツト加がね
じ軸21の軸方向に移動し、偏心ベース19が上方また
は下方に移動して、ボス16を回転軸11の軸方向に移
動させる。例えば、ボス16を上方に動かせば、斜めに
取り付けたロッド15の上部が上に引張られロード15
の下部が回転軸11の中心方向憂こ引かれ、これによっ
てスライドベース9が回転軸11の軸方向に対し直角方
向、すなわちE料電極2に平行な面で移動し、永久磁石
5が回転軸11の中心に対して移動jiLの偏心をする
。なお。
First, in order to make the permanent magnet 5 eccentric with respect to the center of the rotating shaft 11, the eccentric motor n is driven and the screw shaft 21 is rotated. The eccentric base 19 moves upward or downward to move the boss 16 in the axial direction of the rotating shaft 11. For example, if the boss 16 is moved upward, the upper part of the obliquely attached rod 15 will be pulled upward, causing the load 15 to move upward.
is pulled toward the center of the rotating shaft 11, thereby moving the slide base 9 in a direction perpendicular to the axial direction of the rotating shaft 11, that is, in a plane parallel to the E material electrode 2, and the permanent magnet 5 moves toward the center of the rotating shaft 11. The movement jiL is eccentric with respect to the center of 11. In addition.

この場合は、ボス16を上げることによって永久磁石5
を偏心させたが、ボス16を下げてロッド15の下部を
押し出しスライドベース9を移動させて永、 8 。
In this case, by raising the boss 16, the permanent magnet 5
8, by lowering the boss 16, pushing out the lower part of the rod 15, and moving the slide base 9.

久磁石5を偏心させるようにしても良い。The permanent magnet 5 may be eccentric.

また、永久磁石5を偏心回転させるには、前述のように
偏心用モータnを駆動して永久磁石5を偏心させておき
、回転用モータZを駆動することによって回転軸11を
回転させる。これによって、回転ベース8およびスライ
ドベース9が回わり、永久磁石5が偏心回転する。
Further, in order to eccentrically rotate the permanent magnet 5, the eccentric motor n is driven to eccentrically rotate the permanent magnet 5 as described above, and the rotating shaft 11 is rotated by driving the rotation motor Z. As a result, the rotating base 8 and the slide base 9 rotate, and the permanent magnet 5 rotates eccentrically.

また、永久研石5と試料電極2との距離の調整は、上下
用モータnを駆動してねじ軸6を回転させることによっ
て、上下ベース13に設けたナツトがかねじ軸5の軸方
向に移動し、上下ベースI3が上方または下方に移動し
て、固定軸11を軸方向に移猛させ、永久磁石5を移動
量Hの範囲で移動。
Further, the distance between the permanent grinding stone 5 and the sample electrode 2 can be adjusted by driving the vertical motor n and rotating the screw shaft 6, so that the nut provided on the vertical base 13 is rotated in the axial direction of the screw shaft 5. The upper and lower bases I3 move upward or downward, moving the fixed shaft 11 in the axial direction, and moving the permanent magnets 5 within the range of the moving amount H.

調整する。adjust.

なお、永久磁石5を回転軸11の軸方向に移動させた場
合、すなわち、上下ベース13を上下動させた場合でも
、偏心用モータ乙に連結したねじ軸21は、軸受29部
でねじ軸21が固定ベース別とずれるようになっている
ので、ねじ軸21は上下ベース13とともに回転軸11
の軸方向に移動し、スライドベ−ス9を偏心させること
はない。
Note that even when the permanent magnet 5 is moved in the axial direction of the rotary shaft 11, that is, even when the vertical base 13 is moved up and down, the screw shaft 21 connected to the eccentric motor B is rotated at the bearing 29. Since the screw shaft 21 is shifted from the fixed base, the screw shaft 21 is aligned with the rotation shaft 11 along with the upper and lower bases 13.
The slide base 9 is moved in the axial direction without causing eccentricity of the slide base 9.

以上、木−実施例によれば、試料電極2に対して、永久
磁石5を任意に偏心回転させることができるとともに、
更に試料電極2の面に対し垂直方向に永久磁石5を移動
させることができるので、処理対象物やプロセス条件が
変わった場合でも最適な条件を作り出すことができると
いう効果がある。
As described above, according to the tree embodiment, the permanent magnet 5 can be eccentrically rotated arbitrarily with respect to the sample electrode 2, and
Furthermore, since the permanent magnet 5 can be moved in a direction perpendicular to the surface of the sample electrode 2, there is an advantage that even if the object to be treated or the process conditions change, optimal conditions can be created.

なお、本実施例では、上下ベース3および偏心ベース1
9の上下動をモータを用いたねじ軸の回転によって得る
ようにしているが、シリンダ等によって直接に直線運動
を与えるものを接続しても良いO また、本実施例では、試料電極2と対向電極4との間の
電界を生じさせるための電源の接続の仕方は特に述べて
いないが、試料電極2に電源を接続しても良いし、対同
電[i2に電源を接続しても良い。これは処理する対象
物に合わせ接続を変えれば良い。
In addition, in this embodiment, the upper and lower bases 3 and the eccentric base 1
Although the vertical movement of 9 is obtained by rotating the screw shaft using a motor, it is also possible to connect a cylinder or the like that directly provides linear movement. Although there is no particular mention of how to connect a power source to generate an electric field between the electrode 4 and the sample electrode 2, the power source may be connected to the sample electrode 2, or the power source may be connected to the counter electrode [i2]. . This can be done by changing the connections depending on the object to be processed.

さらに、木−実施例では、永久磁石5の形状について述
べていないが、偏心回転でき磁界の均一性を出すことが
できるので、種々の形状が考えられる。
Furthermore, although the shape of the permanent magnet 5 is not described in the tree embodiment, various shapes are possible since it can rotate eccentrically and provide uniformity of the magnetic field.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、プラズマ処理が変わった場合暑こおい
ても、最適な条件を得ることができるという効果がある
According to the present invention, it is possible to obtain optimal conditions even if the plasma treatment is changed in the heat.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例である半導体製造装置を示す
縦断面図、第2図は第1図の回転ベース部の外観図、第
3図は第2図のA−A部の平断面図である。 l・・・・・・チャンバー、2・・・・・・試料電極、
4・・・・・・対向電極、5・・・・・・永久磁石、8
・・・・・・回転ベース、9・・・・・・スライドベー
ス、11・・・・・・回転軸、I3・・・・・・上下ベ
ース、15・・・・・・ロッド、16・・・・・・ボス
、19・・・・・・偏心ベース、頷、26・・・・・・
ナツト、2]、25・・・・・・ねじ軸、2il凶 亡ス 第2閃 イ3図
FIG. 1 is a vertical cross-sectional view showing a semiconductor manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is an external view of the rotating base part in FIG. 1, and FIG. FIG. l...Chamber, 2...Sample electrode,
4...Counter electrode, 5...Permanent magnet, 8
... Rotating base, 9 ... Slide base, 11 ... Rotating shaft, I3 ... Upper and lower base, 15 ... Rod, 16. ...boss, 19...eccentric base, nod, 26...
Natsu, 2], 25...screw shaft, 2il brutal second flash 3 figure

Claims (1)

【特許請求の範囲】 1、処理ガスが供給され所定圧力に減圧排気される真空
容器と、 該真空容器内に設けられ試料を配置する試料電極と、 前記真空容器内の雰囲気に接し該試料電極に対向する対
向電極と、 該対向電極の反試料電極側に隙間を有して設けた磁石要
素と、 該磁石要素を取り付けたスライドベースと、該スライド
ベースを前記磁石要素の平面方向に移動自在に支持する
回転ベースと、 該回転ベースに取り付け該回転ベースの回転中心と同心
に設けた回転軸と、 該回転軸に回転を与える回転手段と、 前記回転軸の軸方向に移動自在に設けたボスと、 前記回転軸の中心軸に対して傾斜させて設け一端を該ボ
スに他端を前記スライドベースにおのおの揺動自在に結
合したロッドと、 前記ボスを前記回転軸の軸方向に移動させる第1の移動
手段と、 前記回転軸を軸方向に移動させる第2の移動手段と を具備したことを特徴とする半導体製造装置。
[Claims] 1. A vacuum container to which a processing gas is supplied and which is evacuated to a predetermined pressure; a sample electrode provided in the vacuum container and on which a sample is placed; and a sample electrode in contact with the atmosphere in the vacuum container. A counter electrode facing the counter electrode, a magnet element provided with a gap on the opposite side of the sample electrode of the counter electrode, a slide base to which the magnet element is attached, and the slide base is movable in a plane direction of the magnet element. a rotating base supported on the rotating base; a rotating shaft attached to the rotating base and provided concentrically with the center of rotation of the rotating base; a rotating means for applying rotation to the rotating shaft; and a rotating means provided movably in the axial direction of the rotating shaft. a boss; a rod that is inclined with respect to the central axis of the rotational shaft and has one end connected to the boss and the other end swingably connected to the slide base; and a rod for moving the boss in the axial direction of the rotational shaft. A semiconductor manufacturing apparatus comprising: a first moving means; and a second moving means for moving the rotating shaft in the axial direction.
JP9980187A 1987-04-24 1987-04-24 Semiconductor manufacturing equipment Pending JPS63266826A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9980187A JPS63266826A (en) 1987-04-24 1987-04-24 Semiconductor manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9980187A JPS63266826A (en) 1987-04-24 1987-04-24 Semiconductor manufacturing equipment

Publications (1)

Publication Number Publication Date
JPS63266826A true JPS63266826A (en) 1988-11-02

Family

ID=14256989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9980187A Pending JPS63266826A (en) 1987-04-24 1987-04-24 Semiconductor manufacturing equipment

Country Status (1)

Country Link
JP (1) JPS63266826A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03190127A (en) * 1989-12-19 1991-08-20 Oki Electric Ind Co Ltd Magnetic field producer and dryprocessor equipped with same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03190127A (en) * 1989-12-19 1991-08-20 Oki Electric Ind Co Ltd Magnetic field producer and dryprocessor equipped with same

Similar Documents

Publication Publication Date Title
US5336355A (en) Methods and apparatus for confinement of a plasma etch region for precision shaping of surfaces of substances and films
US3030194A (en) Processing of semiconductor devices
CN110177898B (en) Sputtering apparatus and film forming method
US6080272A (en) Method and apparatus for plasma etching a wafer
JPH0966446A (en) Work clamping mechanism for grinding machine
JPS63266826A (en) Semiconductor manufacturing equipment
JP4291499B2 (en) Vacuum processing equipment
JPH06181187A (en) Sputtering system
KR101207118B1 (en) Supersonic machine
JPS63266827A (en) Semiconductor manufacturing equipment
JP2734734B2 (en) Plasma processing equipment
US5387331A (en) Wafer cutting device
JPH01310865A (en) Superfine grinding device
CN218855487U (en) Winding machine suitable for screws with different lengths
CN219665337U (en) Linear cutting fixing device
CN220698511U (en) Device for micro-arc plasma discharge machining of SiC semiconductor material
AU2020341775B2 (en) Electrical discharge process and apparatus for machining elongated workpieces
JP3238630B2 (en) Gas supply nozzle and radical reaction type precision processing equipment
JPS61260634A (en) Plasma processor
SU1526937A1 (en) Machine for electroabrasive dressing of diamond wheels
JP2002192460A (en) Grinding device
CN206553623U (en) Magnetron sputtering plating source and its device
SU725819A1 (en) Apparatus for applying metal-powder coating
JPS61194726A (en) Plasma processing unit
CN115332031A (en) Plasma processing apparatus