CN220698511U - Device for micro-arc plasma discharge machining of SiC semiconductor material - Google Patents
Device for micro-arc plasma discharge machining of SiC semiconductor material Download PDFInfo
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- CN220698511U CN220698511U CN202321877368.7U CN202321877368U CN220698511U CN 220698511 U CN220698511 U CN 220698511U CN 202321877368 U CN202321877368 U CN 202321877368U CN 220698511 U CN220698511 U CN 220698511U
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- 239000000463 material Substances 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000003754 machining Methods 0.000 title claims description 7
- 238000003860 storage Methods 0.000 claims abstract description 28
- 239000013078 crystal Substances 0.000 claims abstract description 24
- 230000005540 biological transmission Effects 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 16
- 239000008367 deionised water Substances 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- 230000002457 bidirectional effect Effects 0.000 claims description 7
- 238000005096 rolling process Methods 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 abstract description 10
- 230000006378 damage Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 48
- 229910010271 silicon carbide Inorganic materials 0.000 description 47
- 238000010891 electric arc Methods 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000010892 electric spark Methods 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
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- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Abstract
The utility model discloses a device for micro-arc plasma discharge processing of SiC semiconductor materials, which comprises a control cabinet and a main body part, wherein a wire storage cylinder, an upright post and a workbench are arranged on a lathe bed; one end of a rotating shaft of the wire storage cylinder is in transmission connection with a roller motor, the other end of the rotating shaft of the wire storage cylinder is in meshed connection with the input end of a gear pair, the output end of the gear pair is in sliding connection with a shifting fork, and the shifting fork is correspondingly arranged with a travel switch; the upper arm and the lower arm are fixedly arranged on the upright post, two ends of the upper arm and two ends of the lower arm are respectively provided with a guide wheel, and electrode wires are wound between the four guide wheels and the wire storage cylinder together; the workbench is provided with a clamp, the clamp is provided with a rotating motor, and SiC single crystals are clamped in the clamp. The device provided by the utility model realizes micro-cutting of SiC single crystal by utilizing the generated micro-arc plasma, can obtain the effects of non-contact processing, no surface warpage, no surface damage and low TTV, and simultaneously keeps higher material removal rate.
Description
Technical Field
The utility model belongs to the technical field of SiC semiconductor material processing, and relates to a device for micro-arc plasma discharge processing of a SiC semiconductor material.
Background
SiC has the characteristics of large forbidden bandwidth, high thermal conductivity and high critical breakdown electric field, and is widely applied to the fields of new energy automobiles, artificial intelligence, aerospace, satellite communication and the like. Because the carbon atoms and silicon atoms in SiC form covalent bonds by sharing electron pairs on sp3 hybridized orbitals, the Mohs hardness can reach 9.2 or more, which also makes the processing very difficult.
Currently, common methods of cutting SiC semiconductor materials are a consolidated diamond wire saw method and a wire-cut electric discharge method. The consolidated diamond wire saw method has narrow kerf, high material removal rate and freely changeable wire saw cutting direction, but in the consolidated diamond wire saw processing process, the material removal is realized by two-body grinding between diamond abrasive particles and the surface of a workpiece, so that a large number of kerfs are displayed on the surface of the workpiece, and the warpage of the cut wafer and the total thickness deviation (TTV) are larger. As a non-contact processing technology, the wire-cut electric discharge method has no macroscopic force in the whole processing process, the cut wafer has no warpage and smaller total thickness deviation, but the instantaneous temperature generated by discharge can reach more than 10000K, so that a thermal damage layer can be generated on the surface of the wafer, and the subsequent grinding and polishing workload is increased.
Therefore, there is a need to develop a new apparatus for micro-arc plasma discharge processing of SiC semiconductor materials, which solves the above-mentioned problems.
Disclosure of Invention
The utility model aims to provide a device for processing SiC semiconductor materials by micro-arc plasma discharge, which solves the problems of poor surface quality, wafer warpage and thermal damage layer in the prior art SiC processing.
The technical scheme adopted by the utility model is that the device for micro-arc plasma discharge machining of the SiC semiconductor material comprises a control cabinet and a main body part, wherein a lathe bed of the main body part is arranged on four support bases, and a wire storage cylinder, an upright post and a workbench are arranged on the lathe bed;
one end of a rotating shaft of the wire storage cylinder is in transmission connection with a roller motor, the other end of the rotating shaft of the wire storage cylinder is in meshed connection with the input end of a gear pair, the output end of the gear pair is in sliding connection with a shifting fork, and the shifting fork is correspondingly arranged with a travel switch;
the upper arm and the lower arm are fixedly arranged on the upright post, two ends of the upper arm and two ends of the lower arm are respectively provided with a guide wheel, and electrode wires are wound between the four guide wheels and the wire storage cylinder together; the workbench is provided with a clamp, the clamp is provided with a rotating motor, and SiC single crystals are clamped in the clamp.
The device for micro-arc plasma discharge processing of SiC semiconductor material is characterized in that:
the upper arm is also provided with a wire tightening nut and a wire tightening mechanism, and the wire tightening nut and the wire tightening mechanism are correspondingly arranged with the electrode wire together, so that the electrode wire maintains constant tension in the processing process; the upper arm is also provided with a working lamp, the irradiation range of the working lamp is a processing area, and the workbench is positioned in the processing area.
The workbench is sleeved on the bidirectional rolling guide rail in a sliding way, and an axial hand wheel and a radial hand wheel are arranged between the workbench and the bidirectional rolling guide rail.
The workbench is also provided with a dielectric medium circulating mechanism, the dielectric medium circulating mechanism comprises a water pump, the water inlet end of the water pump is connected into the water tank, the water outlet end of the water pump is communicated with the nozzle, and the deionized water in the water tank is pumped out by the water pump and sprayed to a processing area between the SiC monocrystal and the electrode wire through the nozzle.
The control cabinet is internally provided with a unipolar high-frequency pulse power supply, the positive electrode of the high-frequency pulse power supply is connected with the SiC monocrystal, and the negative electrode of the high-frequency pulse power supply is connected with the wire storage cylinder.
The high-frequency pulse power supply, the roller motor, the rotating motor, the water pump and the travel switch in the control cabinet are all in signal connection with the data processor in the control cabinet.
The utility model has the advantages that the plasma intensity generated by discharge is controlled in a micro-arc discharge area (near a G area in fig. 5), the ionization rate of gas after ionization can reach 70%, so as to form micro-arc plasma, and micro-arc plasma is utilized to realize micro-cutting of SiC single crystal, thereby not only obtaining the effects of non-contact processing, no surface warpage, no surface damage and low TTV, but also keeping higher material removal rate. The ionization rate of the gas on the right side of the G region can reach 100% theoretically, and the region is a discharge region such as electric spark forming processing, electric spark wire cutting and the like, but because the volt-ampere characteristic is in an arc discharge region, the surface of the anode SiC monocrystal is easy to burn, and the silicon carbide single crystal is prevented from being used for processing precise semiconductor materials.
Drawings
FIG. 1 is a schematic axial view of the device of the present utility model;
FIG. 2 is a partial schematic view of FIG. 1;
FIG. 3 is a schematic view of the radial structure of the device of the present utility model;
FIG. 4 is a partial schematic view of FIG. 3;
FIG. 5 is a graph of the voltammetric characteristics of a gas discharge during operation of the present utility model.
In the figure, 1, a control cabinet, 2, an axial hand wheel, 3, a workbench, 4, a stand column, 5, siC single crystal, 6, a clamp, 7, a rotary motor, 8, a roller motor, 9, a water pump, 10, a water tank, 11, a support base, 12, a lathe bed, 13, a travel switch, 14, a shifting fork, 15, a wire storage cylinder, 16, a gear pair, 17, a wire tightening mechanism, 18, a wire tightening nut, 19, a working lamp, 20, a guide wheel, 21, an upper arm, 22, an electrode wire, 23, a nozzle, 24, a radial hand wheel, 25, a bidirectional rolling guide rail and 26, a lower arm.
Detailed Description
The utility model will be described in detail below with reference to the drawings and the detailed description.
Referring to fig. 1, 2, 3 and 4, the structure of the device of the utility model is that the device comprises a control cabinet 1 and a main body part, a lathe bed 12 of the main body part is arranged on four supporting bases 11, and a wire storage cylinder 15, an upright post 4 and a workbench 3 are arranged on the lathe bed 12;
one end of a rotating shaft of the wire storage cylinder 15 is in transmission connection with the roller motor 8, the other end of the rotating shaft of the wire storage cylinder 15 is in meshed connection with the input end of the gear pair 16, the output end of the gear pair 16 is in sliding connection with the shifting fork 14, and the shifting fork 14 is correspondingly arranged with the travel switch 13; the roller motor 8 drives the wire storage cylinder 15 to rotate, the rotation of the wire storage cylinder 15 drives the gear pair 16 to rotate and enables the shifting fork 14 to axially move, when the shifting fork 14 moves for a certain stroke and touches the travel switch 13, a trigger signal of the travel switch 13 is transmitted to the control cabinet 1, and the control cabinet 1 sends a feedback signal to the roller motor 8 to enable the roller motor 8 to reverse and rotate, and the wire storage cylinder 15 rotates reversely;
the upright post 4 is fixedly provided with an upper arm 21, a lower arm 26 and a wire tightening mechanism 17, two ends of the upper arm 21 and two ends of the lower arm 26 are respectively provided with a guide wheel 20, a total of four guide wheels 20, and electrode wires 22 are wound between the four guide wheels 20 and the wire storage barrel 15; the upper arm 21 is also provided with a wire tightening nut 18, and the wire tightening mechanism 17 and the wire tightening nut 18 are correspondingly arranged with the electrode wire 22 together, so that the electrode wire 22 maintains constant tension in the processing process; the upper arm 21 is also provided with a working lamp 19, and the irradiation range of the working lamp 19 is a processing area;
the workbench 3 is positioned in the processing area, the workbench 3 is sleeved on the bidirectional rolling guide rail 25 in a sliding way, an axial hand wheel 2 and a radial hand wheel 24 are arranged between the workbench 3 and the bidirectional rolling guide rail 25, the workbench 3 can move axially by rotating the axial hand wheel 2, and the workbench 3 can move radially by rotating the radial hand wheel 24; the workbench 3 is further provided with an axial servo motor and a radial servo motor, so that accurate operation in the working process is realized, and the workbench 3 and accessory parts thereof are called a coordinate workbench together;
the workbench 3 is provided with a clamp 6, the clamp 6 is provided with a rotating motor 7, and the clamp 6 clamps the SiC single crystal 5;
the workbench 3 is also provided with a dielectric medium circulation mechanism which comprises a water pump 9, the water inlet end of the water pump 9 is connected into the water tank 10, the water outlet end of the water pump 9 is communicated with a nozzle 23, and the water pump 9 pumps deionized water in the water tank 10 and sprays the deionized water into a processing area between the SiC monocrystal 5 and the electrode wire 22 through the nozzle 23;
a unipolar high-frequency pulse power supply is arranged in the control cabinet 1, the positive electrode of the high-frequency pulse power supply is connected with the SiC monocrystal 5, and the negative electrode of the high-frequency pulse power supply is connected with the wire storage cylinder 15;
the high-frequency pulse power supply, the roller motor 8, the rotating motor 7, the water pump 9, the travel switch 13 and the two servo motors in the control cabinet 1 are all in signal connection with the data processor in the control cabinet. The data processor collects discharge voltage and discharge current signals in the processing process and controls the discharge state in the processing process to be always kept in a micro-arc discharge area; coordinating the working processes of a roller motor 8, a rotary motor 7 and a water pump 9; in addition, the control cabinet 1 also sends a feedback signal to the roller motor 8 through a trigger signal of the travel switch 13 to enable the roller motor 8 to reverse in a reversing manner, so that the reciprocating operation of the electrode wire 22 is realized.
Based on the structure of the utility model, the working process of the utility model is as follows:
1) The positive electrode of a high-frequency pulse power supply in the control cabinet 1 is connected with the SiC monocrystal 5, and the negative electrode of the high-frequency pulse power supply is connected with the wire storage cylinder 15 and is electrified;
2) A roller motor 8, a rotary motor 7 and a water pump 9 are started, the processing is started,
the electrode wire 22 performs reciprocating motion, and the wire conveying speed is continuously adjustable between 1 and 20 m/s; the SiC single crystal 5 rotates along with the clamp 6 and feeds along with the workbench 3 to the direction of the electrode wire 22 (a control cabinet sends an instruction to a servo motor in the processing process, the servo motor drives the workbench 3 to move accurately, the servo motor is not shown in the drawing), the rotating speed of the SiC single crystal 5 is continuously adjustable at 0-60r/min, and the feeding speed of the workbench 3 is continuously adjustable at 1-10 mu m/s; the water pump 9 pumps deionized water in the water tank 10, sprays the deionized water in a processing area between the SiC monocrystal 5 and the electrode wire 22 through the nozzle 23, conducts a circuit, has no-load voltage of 110V and continuously adjustable pulse width of 4-74 mu s; the duty ratio is 1/15-1/3 continuously adjustable;
when a strong electric field generated between the SiC monocrystal 5 and the electrode wire 22 reaches the breakdown field strength of the dielectric medium, the dielectric medium between the two electrodes is broken down to form a plasma discharge channel; the data processor can always maintain the plasma intensity generated by discharge in a micro-arc discharge state by regulating and controlling the plasma intensity generated by discharge, and the micro-arc generated plasma is utilized to realize the micro-cutting process of the SiC single crystal 5.
3) Cutting of the SiC single crystal 5 is completed, and the control cabinet 1 and related equipment are closed.
Example 1
1) The positive electrode of a high-frequency pulse power supply in the control cabinet 1 is connected with the SiC monocrystal 5, and the negative electrode of the high-frequency pulse power supply is connected with the wire storage cylinder 15 and is electrified;
2) A roller motor 8, a rotary motor 7 and a water pump 9 are started, the processing is started,
the wire electrode 22 is made to reciprocate, and the wire conveying speed is 5m/s; the SiC single crystal 5 rotates along with the clamp 6 and is fed along with the workbench 3 towards the direction of the electrode wire 22, the rotating speed of the SiC single crystal 5 is 4r/min, and the feeding speed of the workbench 3 is 4 mu m/s; the water pump 9 pumps deionized water in the water tank 10, sprays the deionized water between the SiC monocrystal 5 and the electrode wire 22 through the nozzle 23, and conducts the circuit, the no-load voltage is 110V, and the pulse width is 44 mu s; the duty cycle is 1/7.
When a strong electric field generated between the SiC monocrystal 5 and the electrode wire 22 reaches the breakdown field strength of the dielectric medium, the dielectric medium between the two electrodes is broken down to form a plasma discharge channel; the control cabinet collects the discharge voltage and the discharge current signals, and controls the discharge voltage to be about 25V, so that the discharge state is always kept in a micro-arc discharge zone, and the micro-cutting process of the SiC single crystal is realized by utilizing plasma generated by micro arcs.
3) And (5) finishing the processing of the SiC single crystal 5, and closing the control cabinet 1 and related equipment.
Example 2
1) The positive electrode of a high-frequency pulse power supply in the control cabinet 1 is connected with the SiC monocrystal 5, and the negative electrode of the high-frequency pulse power supply is connected with the wire storage cylinder 15 and is electrified;
2) A roller motor 8, a rotary motor 7 and a water pump 9 are started, the processing is started,
the wire electrode 22 is made to reciprocate, and the wire conveying speed is 6m/s; the SiC single crystal 5 rotates along with the clamp 6 and is fed along with the workbench 3 towards the direction of the electrode wire 22, the rotating speed of the SiC single crystal 5 is 5r/min, and the feeding speed of the workbench 3 is 5 mu m/s; the water pump 9 pumps deionized water in the water tank 10, sprays the deionized water between the SiC monocrystal 5 and the electrode wire 22 through the nozzle 23, and conducts the circuit, the no-load voltage is 110V, and the pulse width is 54 mu s; the duty cycle is 1/7.
When a strong electric field generated between the SiC monocrystal 5 and the electrode wire 22 reaches the breakdown field strength of the dielectric medium, the dielectric medium between the two electrodes is broken down to form a plasma discharge channel; the control cabinet collects the discharge voltage and the discharge current signals, and controls the discharge voltage to be about 30V, so that the discharge state is always kept in a micro-arc discharge zone, and the micro-cutting process of the SiC single crystal is realized by utilizing plasma generated by micro arcs.
3) And (5) finishing the processing of the SiC single crystal 5, and closing the control cabinet 1 and related equipment.
Example 3
1) The positive electrode of a high-frequency pulse power supply in the control cabinet 1 is connected with the SiC monocrystal 5, and the negative electrode of the high-frequency pulse power supply is connected with the wire storage cylinder 15 and is electrified;
2) A roller motor 8, a rotary motor 7 and a water pump 9 are started, the processing is started,
the wire electrode 22 is made to reciprocate, and the wire conveying speed is 7m/s; the SiC single crystal 5 rotates along with the clamp 6 and is fed along with the workbench 3 towards the direction of the electrode wire 22, the rotating speed of the SiC single crystal 5 is 6r/min, and the feeding speed of the workbench 3 is 6 mu m/s; the water pump 9 pumps deionized water in the water tank 10, sprays the deionized water between the SiC monocrystal 5 and the electrode wire 22 through the nozzle 23, and conducts the circuit, the no-load voltage is 110V, and the pulse width is 64 mu s; the duty cycle is 1/7.
When a strong electric field generated between the SiC monocrystal 5 and the electrode wire 22 reaches the breakdown field strength of the dielectric medium, the dielectric medium between the two electrodes is broken down to form a plasma discharge channel; the control cabinet collects the discharge voltage and the discharge current signals, and controls the discharge voltage to be about 35V, so that the discharge state is always kept in a micro-arc discharge zone, and the micro-cutting process of the SiC single crystal is realized by utilizing plasma generated by micro arcs.
3) And (5) finishing the processing of the SiC single crystal 5, and closing the control cabinet 1 and related equipment.
Claims (5)
1. A device for micro-arc plasma discharge processing of SiC semiconductor material, characterized in that: the automatic wire storage device comprises a control cabinet (1) and a main body part, wherein a lathe bed (12) of the main body part is arranged on four supporting bases (11), and a wire storage cylinder (15), an upright post (4) and a workbench (3) are arranged on the lathe bed (12);
one end of a rotating shaft of the wire storage cylinder (15) is in transmission connection with the roller motor (8), the other end of the rotating shaft of the wire storage cylinder (15) is in meshed connection with the input end of the gear pair (16), the output end of the gear pair (16) is in sliding connection with the shifting fork (14), and the shifting fork (14) is correspondingly arranged with the travel switch (13);
an upper arm (21) and a lower arm (26) are fixedly arranged on the upright post (4), two ends of the upper arm (21) and two ends of the lower arm (26) are respectively provided with a guide wheel (20), and electrode wires (22) are wound between the four guide wheels (20) and the wire storage cylinder (15) together; a clamp (6) is arranged on the workbench (3), a rotating motor (7) is arranged on the clamp (6), and the SiC single crystal (5) is clamped in the clamp (6).
2. The apparatus for micro-arc plasma discharge machining of SiC semiconductor material according to claim 1, characterized in that: the upper arm (21) is also provided with a wire tightening nut (18) and a wire tightening mechanism (17), and the wire tightening nut (18) and the wire tightening mechanism (17) are correspondingly configured with the electrode wire (22) so that the electrode wire (22) maintains constant tension in the processing process; the upper arm (21) is also provided with a working lamp (19), and the irradiation range of the working lamp (19) is a processing area; a table (3) is located in the processing region.
3. The apparatus for micro-arc plasma discharge machining of SiC semiconductor material according to claim 1, characterized in that: the workbench (3) is slidably sleeved on the bidirectional rolling guide rail (25), an axial hand wheel (2) and a radial hand wheel (24) are arranged between the workbench (3) and the bidirectional rolling guide rail (25), and the workbench (3) is further provided with an axial servo motor and a radial servo motor.
4. The apparatus for micro-arc plasma discharge machining of SiC semiconductor material according to claim 1, characterized in that: the workbench (3) is also provided with a dielectric medium circulation mechanism, the dielectric medium circulation mechanism comprises a water pump (9), the water inlet end of the water pump (9) is connected into the water tank (10), the water outlet end of the water pump (9) is communicated with the nozzle (23), and the deionized water in the water tank (10) is pumped out by the water pump (9) and sprayed into a processing area between the SiC monocrystal (5) and the electrode wire (22) through the nozzle (23).
5. The apparatus for micro-arc plasma discharge machining of SiC semiconductor material according to claim 1, characterized in that: the control cabinet (1) is internally provided with a unipolar high-frequency pulse power supply, the positive electrode of the high-frequency pulse power supply is connected with the SiC monocrystal (5), and the negative electrode of the high-frequency pulse power supply is connected with the wire storage cylinder (15).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321877368.7U CN220698511U (en) | 2023-07-17 | 2023-07-17 | Device for micro-arc plasma discharge machining of SiC semiconductor material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321877368.7U CN220698511U (en) | 2023-07-17 | 2023-07-17 | Device for micro-arc plasma discharge machining of SiC semiconductor material |
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| Publication Number | Publication Date |
|---|---|
| CN220698511U true CN220698511U (en) | 2024-04-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321877368.7U Active CN220698511U (en) | 2023-07-17 | 2023-07-17 | Device for micro-arc plasma discharge machining of SiC semiconductor material |
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| Country | Link |
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| CN (1) | CN220698511U (en) |
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2023
- 2023-07-17 CN CN202321877368.7U patent/CN220698511U/en active Active
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