JPS6326450B2 - - Google Patents
Info
- Publication number
- JPS6326450B2 JPS6326450B2 JP10928080A JP10928080A JPS6326450B2 JP S6326450 B2 JPS6326450 B2 JP S6326450B2 JP 10928080 A JP10928080 A JP 10928080A JP 10928080 A JP10928080 A JP 10928080A JP S6326450 B2 JPS6326450 B2 JP S6326450B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetoresistive element
- magnetic
- magnetoresistive
- magnetic field
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000696 magnetic material Substances 0.000 claims description 7
- 238000001514 detection method Methods 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 230000005415 magnetization Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000005381 magnetic domain Effects 0.000 description 4
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/398—Specially shaped layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Description
【発明の詳細な説明】
本発明は磁気抵抗ヘツドに係り、特に細長い磁
気抵抗素子に磁気方向と電流方向との間の角度が
20〜70度になるようにバーバーポール条件パター
ン電極を設けてなる磁気抵抗ヘツドの改良に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetoresistive head, and more particularly to a magnetoresistive head in which an elongated magnetoresistive element has an angle between a magnetic direction and a current direction.
This invention relates to an improvement in a magnetoresistive head having barberpole patterned electrodes arranged at an angle of 20 to 70 degrees.
磁気抵抗ヘツドとしては、一般に第１図に示す
構造のものが知られている。すなわち、例えば、
ニツケル―鉄合金薄膜からなる磁気抵抗素子１の
一方の端面を磁気記録媒体７の近傍またはそれと
接触させて配置することにより、記録媒体７の磁
界により磁気抵抗素子１の磁化を変化させて、磁
気抵抗効果による磁気抵抗素子１の電気抵抗の変
化を磁気抵抗素子１の両端に設けた電極２，３を
介して接続された電流源４の電圧変化として取り
出すようにしてある。なお、第１図において、５
は磁気抵抗素子１に近傍対向させて設けたマグネ
ツトで、マグネツト５により磁気抵抗素子１にバ
イアス磁界をかけるようにしてある。このマグネ
ツト５は記録媒体７からの信号に対する磁気抵抗
素子１の感度を高めるとともに線形応答に近づけ
る作用をする。すなわち、磁界下における磁気抵
抗素子１の抵抗の変化は、２次的であるので、マ
グネツト５を用いて磁気抵抗素子１の高さ方向に
バイアス磁界をかけて、磁化の方向が磁気抵抗素
子１内を流れる電流の方向と45度の角度をなすよ
うにし、磁気抵抗素子１の動作が最適になるよう
にしている。しかし、このように磁気抵抗素子１
の高さ方向にバイアス磁界をかけると、記録媒体
７上の情報が、このバイアス磁界によつて変化す
る恐れがあり、しかも、多チヤンネルの場合に、
すべての磁気抵抗素子１に対して磁界の強度が同
一になるようにバイアス磁界をかけることが困難
であるという問題がある。 As a magnetoresistive head, one having the structure shown in FIG. 1 is generally known. That is, for example,
By arranging one end surface of the magnetoresistive element 1 made of a nickel-iron alloy thin film near or in contact with the magnetic recording medium 7, the magnetization of the magnetoresistive element 1 is changed by the magnetic field of the recording medium 7, and magnetic Changes in the electrical resistance of the magnetoresistive element 1 due to the resistance effect are extracted as voltage changes of a current source 4 connected via electrodes 2 and 3 provided at both ends of the magnetoresistive element 1. In addition, in Figure 1, 5
is a magnet provided near and opposite to the magnetoresistive element 1, and the magnet 5 applies a bias magnetic field to the magnetoresistive element 1. This magnet 5 serves to increase the sensitivity of the magnetoresistive element 1 to signals from the recording medium 7 and to bring it closer to a linear response. That is, since the change in resistance of the magnetoresistive element 1 under a magnetic field is secondary, a bias magnetic field is applied in the height direction of the magnetoresistive element 1 using the magnet 5, so that the direction of magnetization changes It forms an angle of 45 degrees with the direction of the current flowing therein, so that the operation of the magnetoresistive element 1 is optimized. However, in this way, the magnetoresistive element 1
If a bias magnetic field is applied in the height direction of the recording medium 7, there is a risk that the information on the recording medium 7 will change due to this bias magnetic field.
There is a problem in that it is difficult to apply a bias magnetic field to all magnetoresistive elements 1 so that the magnetic field strength is the same.
この解決策として、第２図に示す構造の磁気抵
抗ヘツドが特公昭54−7564号で提案されている。
これは、磁気抵抗素子１にこれの長さ方向と所定
の角度をなすようにバーバーポール条件パターン
電極（短絡電極）６を設け、この短絡電極６に
て、磁気抵抗素子１の磁気方向と電流方向との間
の角度が20〜70度となるようにし、第１図の磁気
抵抗ヘツドと同様に感度の向上等をはかるように
したものである。以下このような短絡電極、すな
わち、バーバーポール条件パターン電極６を有す
る磁気抵抗素子をバーバーポール型磁気抵抗素子
と称することにする。これによれば、短絡電極６
により、磁化の方向と電流の方向とのなす角を容
易に調節できるため、記録媒体７上の情報の変化
をもたらすような大きなバイアス磁界をかける必
要がなくなる。 As a solution to this problem, a magnetoresistive head having the structure shown in FIG. 2 was proposed in Japanese Patent Publication No. 7564/1983.
This is achieved by providing a barberpole condition pattern electrode (shorting electrode) 6 on the magnetoresistive element 1 so as to make a predetermined angle with the length direction of the magnetoresistive element 1, and at this shorting electrode 6, the magnetic direction of the magnetoresistive element 1 is The angle between the two directions is 20 to 70 degrees, and the sensitivity is improved in the same way as the magnetoresistive head shown in FIG. Hereinafter, a magnetoresistive element having such a short circuit electrode, that is, a barber pole condition pattern electrode 6, will be referred to as a barber pole type magnetoresistive element. According to this, the short circuit electrode 6
As a result, the angle between the magnetization direction and the current direction can be easily adjusted, so there is no need to apply a large bias magnetic field that would cause changes in information on the recording medium 7.
ところが、第２図に示す磁気抵抗ヘツドにおい
ても、線形性を良好にするためには、多少のバイ
アス磁界が必要となる。すなわち、第４図に示す
ように、バイアス磁界をかけないときは、外部磁
界Ｈとバーバーポール型磁気抵抗素子１の抵抗変
化との間に、図示矢印で示してあるようにヒステ
リシス現象が生じ、外部磁界を変化させる回数が
多くなるほど、抵抗変化分が小さくなる。この原
因は、磁気抵抗素子１内に磁区が発生するため
で、これを解決するためには、磁気抵抗素子１の
長手方向に新たにバイアス磁界をかけることが必
要になる。そして、バイアス磁界をマグネツトを
設けて与えるようにすると、第３図に示すよう
に、ヒステリシス現象がなくなり、感度の低下が
現れないようになる。 However, even in the magnetoresistive head shown in FIG. 2, some bias magnetic field is required to improve linearity. That is, as shown in FIG. 4, when no bias magnetic field is applied, a hysteresis phenomenon occurs between the external magnetic field H and the resistance change of the barber-pole magnetoresistive element 1, as shown by the arrows in the figure. The more times the external magnetic field is changed, the smaller the resistance change becomes. This is caused by the generation of magnetic domains within the magnetoresistive element 1, and in order to solve this problem, it is necessary to newly apply a bias magnetic field in the longitudinal direction of the magnetoresistive element 1. If a bias magnetic field is applied by providing a magnet, the hysteresis phenomenon disappears and a decrease in sensitivity does not appear, as shown in FIG.
なお、第３図の実線ａは素子１の長手右側方向
に、点線ｂは素子１の長手左側方向に磁界をかけ
たときの特性である。このように、第２図の構成
にしても、第１図の場合ほど大きくないが、磁気
抵抗素子１の材料の保持力の大きさ程度の磁界の
強さのバイアス磁界をかけることが必要であると
いう欠点がある。 Note that the solid line a in FIG. 3 represents the characteristics when a magnetic field is applied in the longitudinal right direction of the element 1, and the dotted line b represents the characteristic when a magnetic field is applied in the longitudinal left direction of the element 1. In this way, even with the configuration shown in FIG. 2, it is necessary to apply a bias magnetic field with a magnetic field strength comparable to the coercive force of the material of the magnetoresistive element 1, although it is not as large as in the case of FIG. There is a drawback.
本発明は上記に鑑みてなされたもので、その目
的とするところは、バイアス磁界を必要としない
高感度で線形性が良好な磁気抵抗ヘツドを提供す
ることにある。 The present invention has been made in view of the above, and its object is to provide a magnetoresistive head with high sensitivity and good linearity that does not require a bias magnetic field.
本発明の特徴は、磁気抵抗素子をリング型閉磁
気回路を形成するように構成し、この磁気抵抗素
子の磁気記録媒体に近接させる部分に磁気方向と
電流方向との間の角度を所定値に調節するための
バーバーポール条件パターン電極を設け、かつ、
上記磁気抵抗素子の上記磁気記録媒体より遠いと
ころに位置する部分に空隙を設けるかまたは該空
隙に相当する部分に高抵抗磁性体を介在させるよ
うにした点にある。 A feature of the present invention is that the magnetoresistive element is configured to form a ring-shaped closed magnetic circuit, and the angle between the magnetic direction and the current direction is set to a predetermined value in a portion of the magnetoresistive element that is brought close to the magnetic recording medium. Provide a barber pole condition pattern electrode for adjusting, and
The present invention is characterized in that a gap is provided in a portion of the magnetoresistive element located far from the magnetic recording medium, or a high-resistance magnetic material is interposed in a portion corresponding to the gap.
以下本発明を第５図、第６図に示した実施例を
用いて詳細に説明する。 The present invention will be explained in detail below using the embodiments shown in FIGS. 5 and 6.
第５図は本発明の磁気抵抗ヘツドの一実施例を
示す斜視図である。第５図において、１０は基
板、１１はニツケル―鉄等の磁気抵抗効果を有す
る厚さ0.05μmの薄膜で構成した磁気抵抗素子で、
磁気抵抗素子１１は、リング型閉磁気回路を形成
するように構成してあり、磁気抵抗素子１１の磁
気記録媒体７に近接させる部分に、磁気方向と電
流方向との間の角度を20〜70度に調整するための
金製のバーバーポール条片パターン電極１２を磁
気抵抗素子１１の長手方向と30度の角度をなすよ
うに設け、また、磁気抵抗素子１１の磁気記録媒
体７より遠いところに位置する部分に空隙１３を
設けてある。また、磁気抵抗素子１１の条片パタ
ーン電極１２を設けた部分の両側に駆動電流を流
すための金製の電極１４，１５を設けた。 FIG. 5 is a perspective view showing one embodiment of the magnetoresistive head of the present invention. In FIG. 5, 10 is a substrate, 11 is a magnetoresistive element made of a thin film of 0.05 μm thick having a magnetoresistive effect, such as nickel-iron.
The magnetoresistive element 11 is configured to form a ring-shaped closed magnetic circuit, and the angle between the magnetic direction and the current direction is set between 20 and 70 in the portion of the magnetoresistive element 11 that is brought close to the magnetic recording medium 7. A barberpole strip pattern electrode 12 made of gold is provided at an angle of 30 degrees with the longitudinal direction of the magnetoresistive element 11 for adjusting the angle. A gap 13 is provided in the position. Further, gold electrodes 14 and 15 were provided on both sides of the portion of the magnetoresistive element 11 where the strip pattern electrode 12 was provided for flowing a driving current.
磁気抵抗素子１１の電極１４，１５間の条片パ
ターン電極１２を設けてある部分は、磁気記録媒
体７に基板１０を介して近接あるいは接触させて
情報磁界を検出する。そして等電位条片パターン
電極１２の影響下においては、電流は磁気方向と
約45度の角度をなして流れる。また、空隙１３
は、検出された情報電圧が後部磁気回路で分圧さ
れるのを防止する。 A portion of the magnetoresistive element 11 where the strip pattern electrode 12 is provided between the electrodes 14 and 15 is brought close to or in contact with the magnetic recording medium 7 via the substrate 10 to detect the information magnetic field. Under the influence of the equipotential strip pattern electrodes 12, the current flows at an angle of about 45 degrees with the magnetic direction. In addition, the void 13
prevents the detected information voltage from being divided in the rear magnetic circuit.
上記した実施例の磁気抵抗ヘツドによれば、磁
気抵抗素子１１の情報磁界を検出する検出部１１
ａに磁区が発生しないため、感度が低下すること
がなく、かつ、良好な線形特性が得られる。さら
に、磁気抵抗素子１１の検出部１１ａの後方に空
隙１３が設けてある磁気回路１１ｂがあるので、
長記録波長領域での出力増加が期待できる。しか
も、磁気抵抗素子１１がリング型閉磁気回路を構
成しているので、静磁エネルギーが小さく、磁壁
の少ない方がエネルギー的に低いから磁区の発生
が抑えられ、従来のように磁区をなくすためのバ
イアス磁界をかける必要がない。ただし、リング
型閉磁気回路にすると、検出部１１ａでの出力電
圧が分圧されて、出力が低下するという問題を生
ずるが、これは空隙１３を設けることによつて解
決している。 According to the magnetoresistive head of the embodiment described above, the detection section 11 detects the information magnetic field of the magnetoresistive element 11.
Since no magnetic domain is generated in a, sensitivity does not decrease and good linear characteristics can be obtained. Furthermore, since there is a magnetic circuit 11b provided with an air gap 13 behind the detection part 11a of the magnetoresistive element 11,
We can expect an increase in output in the long recording wavelength region. Moreover, since the magnetoresistive element 11 constitutes a ring-shaped closed magnetic circuit, the static magnetic energy is small, and the less domain walls there are, the lower the energy, so the generation of magnetic domains can be suppressed, and unlike the conventional method, magnetic domains can be eliminated. There is no need to apply a bias magnetic field. However, if a ring-shaped closed magnetic circuit is used, the output voltage at the detection section 11a is divided, resulting in a decrease in output, which is a problem that is solved by providing the air gap 13.
なお、第５図において、磁気抵抗素子１１に初
期状態において長さ方向に100Oe程度の磁界を印
加し、その状態で磁界を減ずることにより、磁気
抵抗素子１１の検出部１１ａでの磁化を一方向に
そろえておくことが望ましい。 In addition, in FIG. 5, a magnetic field of about 100 Oe is applied to the magnetoresistive element 11 in the longitudinal direction in the initial state, and by reducing the magnetic field in that state, the magnetization in the detection part 11a of the magnetoresistive element 11 is unidirectionally It is desirable to keep them aligned.
また、磁気回路の形状は、磁気回路の幅を検出
部１１ａで最小とし、空隙１３に近づくにしたが
い大きくすると、磁界を取り去つた後に、磁気回
路の磁化が周方向に一様になるようにすることが
できる。 In addition, the shape of the magnetic circuit is such that the width of the magnetic circuit is minimized at the detection part 11a and increases as it approaches the air gap 13, so that the magnetization of the magnetic circuit becomes uniform in the circumferential direction after the magnetic field is removed. can do.
第６図は本発明の他の実施例を示す斜視図であ
る。第６図においては、第５図の空隙１３に相当
する部分にフエライト等の高抵抗磁性体１６を介
在させてあり、その他は第５図と同様に構成して
ある。高抵抗磁性体１６は蒸着またはスパツタに
より取りつける。このように構成してもよく、効
果は同一である。また、高抵抗磁性体１６のかわ
りに絶縁物でサンドウイチした導電性磁性体を用
いてもよいことはいうまでもない。 FIG. 6 is a perspective view showing another embodiment of the invention. In FIG. 6, a high-resistance magnetic material 16 such as ferrite is interposed in a portion corresponding to the air gap 13 in FIG. 5, and the rest of the structure is the same as that in FIG. 5. The high resistance magnetic material 16 is attached by vapor deposition or sputtering. It may be configured in this way, and the effect will be the same. Furthermore, it goes without saying that instead of the high-resistance magnetic material 16, a conductive magnetic material sandwiched with an insulating material may be used.
以上説明したように、本発明によれば、バイア
ス磁界を必要とせず、しかも、高感度で、かつ、
線形性が良好な磁気抵抗ヘツドとすることができ
るという効果がある。 As explained above, the present invention does not require a bias magnetic field, has high sensitivity, and
This has the effect of providing a magnetoresistive head with good linearity.
第１図、第２図は従来の磁気抵抗ヘツドの斜視
図、第３図、第４図は第２図の磁気抵抗ヘツドの
特性を示す線図、第５図は本発明の磁気抵抗ヘツ
ドの一実施例を示す斜視図、第６図は本発明の他
の実施例を示す斜視図である。
１０……基板、１１……磁気抵抗素子、１１ａ
……検出部、１２……バーバーポール条片パター
ン電極、１３……空隙、１４，１５……電極、１
６……高抵抗磁性体。
1 and 2 are perspective views of a conventional magnetoresistive head, FIGS. 3 and 4 are diagrams showing the characteristics of the magnetoresistive head of FIG. 2, and FIG. 5 is a diagram showing the characteristics of the magnetoresistive head of the present invention. FIG. 6 is a perspective view showing another embodiment of the present invention. 10... Substrate, 11... Magnetoresistive element, 11a
...detection section, 12 ... barber pole strip pattern electrode, 13 ... void, 14, 15 ... electrode, 1
6...High resistance magnetic material.
Claims (1)
けて磁気方向と電流方向との間の角度を所定値に
調節してある磁気抵抗ヘツドにおいて、前記磁気
抵抗素子をリング型閉磁気回を形成するように構
成し、該磁気抵抗素子の磁気記録媒体に近接させ
る部分に前記条片パターン電極を設け、前記磁気
抵抗素子の前記磁気記録媒体より遠いところに位
置する部分に空隙を設けるかまたは該空隙に相当
する部分に高抵抗磁性体を介在させたことを特徴
とする磁気抵抗ヘツド。1. In a magnetoresistive head in which a strip pattern electrode is provided on an elongated magnetoresistive element to adjust the angle between the magnetic direction and the current direction to a predetermined value, the magnetoresistive element is arranged to form a ring-shaped closed magnetic circuit. The strip pattern electrode is provided in a portion of the magnetoresistive element that is located close to the magnetic recording medium, and a gap is provided in a portion of the magnetoresistive element that is located farther from the magnetic recording medium, or a gap is provided in the gap. A magnetoresistive head characterized in that a high-resistance magnetic material is interposed in the corresponding portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10928080A JPS5736428A (en) | 1980-08-11 | 1980-08-11 | Magnetic resistance head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10928080A JPS5736428A (en) | 1980-08-11 | 1980-08-11 | Magnetic resistance head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5736428A JPS5736428A (en) | 1982-02-27 |
| JPS6326450B2 true JPS6326450B2 (en) | 1988-05-30 |
Family
ID=14506159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10928080A Granted JPS5736428A (en) | 1980-08-11 | 1980-08-11 | Magnetic resistance head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5736428A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4535375A (en) * | 1983-01-14 | 1985-08-13 | Magnetic Peripherals, Inc. | Magnetoresistive head |
| JPS61196417A (en) * | 1985-02-25 | 1986-08-30 | Matsushita Electric Ind Co Ltd | Thin film magnetic head |
| JPH0810486B2 (en) * | 1985-05-09 | 1996-01-31 | 松下電器産業株式会社 | Magnetoresistive magnetic head |
| JP2583851B2 (en) * | 1986-04-09 | 1997-02-19 | 松下電器産業株式会社 | Magnetoresistive magnetic head |
| JP6052732B2 (en) | 2012-11-22 | 2016-12-27 | 公立大学法人大阪市立大学 | Magnetoresistive effect element |
-
1980
- 1980-08-11 JP JP10928080A patent/JPS5736428A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5736428A (en) | 1982-02-27 |
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