JPS58100217A - Magnetoresistance effect head - Google Patents

Magnetoresistance effect head

Info

Publication number
JPS58100217A
JPS58100217A JP19850781A JP19850781A JPS58100217A JP S58100217 A JPS58100217 A JP S58100217A JP 19850781 A JP19850781 A JP 19850781A JP 19850781 A JP19850781 A JP 19850781A JP S58100217 A JPS58100217 A JP S58100217A
Authority
JP
Japan
Prior art keywords
permanent magnet
magnetic field
head
recording medium
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19850781A
Other languages
Japanese (ja)
Inventor
Nobuhiro Tokujiyuku
徳宿 伸弘
Katsuyuki Tanaka
克之 田中
Isao Oshima
大島 勲
Masakatsu Saito
斉藤 正勝
Masamichi Yamada
雅通 山田
Yoshihiko Noro
良彦 野呂
Nobuo Arai
信夫 新井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP19850781A priority Critical patent/JPS58100217A/en
Publication of JPS58100217A publication Critical patent/JPS58100217A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)

Abstract

PURPOSE:To facilitate control over the intensity and position of a permanent magnet and to obtain excellent characteristics, by arranging the permanent magnet for biasing behind the end part where cut grooves are formed in the track widthwise direction on the opposite end part of a magnetoresistance effect element to a magnetic recording medium. CONSTITUTION:A magnetoresistance effect (MR) head consists of a substrate 21, MR element 22 with 0.05mum film thickness, permanent magnet 24 for biasing having 0.2mum film thickness, and electrodes 2 and 3. The MR element 22 is formed in a parallelogram shape while having plural grooves 23 at an angle theta (20-60 deg.) to a trackwidthwise direction at the opposite end part to a magnetic recording medium 6. Because of the grooves 23 and permanent magnet 24, the magnetism M of the MR element 22 slants to a current (i) to optimize an operation point easily, thereby obtaining excellent characteristics over a wide bias magnetic field range.

Description

【発明の詳細な説明】 本発明は磁気抵抗効果ヘッドに係り、特に広範囲のバイ
アス磁界に対して良好な特性が得られ、バイアス用永久
磁石の強度および位置の制御をしやすくするのに好適な
構造の磁気抵抗効果ヘッドに関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetoresistive head, which has particularly good characteristics over a wide range of bias magnetic fields, and is suitable for easily controlling the strength and position of bias permanent magnets. The present invention relates to a magnetoresistive head having a structure.

磁気抵抗効果素子を用いた磁気ヘッド(以下MRヘッド
と略す。)としては、一般に第1図に示す構造のものが
知られている。すなわち、第1図に示すように、例えば
、ニッケルー鉄合金薄膜からなる磁気抵抗効果素子(以
下MR素子と略す。)1の一方の端面を磁気記録媒体側
の近傍またはこれと接触させて配置することにより、磁
気記録媒体6の磁界によりMR素子1の磁化を変化させ
て、磁気抵抗効果によるMR素子1の電気抵抗値の変化
をMR素子1の両端に設けた電極2.ろを介して接続さ
れた電流源4の電圧変化として取シ出すようにしである
As a magnetic head (hereinafter abbreviated as MR head) using a magnetoresistive element, one having the structure shown in FIG. 1 is generally known. That is, as shown in FIG. 1, one end surface of a magnetoresistive element (hereinafter abbreviated as MR element) 1 made of, for example, a nickel-iron alloy thin film is placed near or in contact with the magnetic recording medium. By this, the magnetization of the MR element 1 is changed by the magnetic field of the magnetic recording medium 6, and the change in the electrical resistance value of the MR element 1 due to the magnetoresistive effect is caused by the electrodes 2. This is taken out as a voltage change of the current source 4 connected through the filter.

なお、5はMR素子1に近接対向させて設けた永久磁石
で、永久磁石5によりMR素子1にバイアス磁界をかけ
るようにしである。この永久磁石5は、磁気記録媒体6
からの信号に対するMR素子1の感度を高めるとともに
、線形応答に近づける作用をする。すなわち、磁界下に
おけるMR素子1の抵抗値の変化は2次曲線的であるの
で、永久磁石5を用いてM R素子1の高さ方向にバイ
アス磁界をかけて、磁化の方向がM’ R素子1内を流
れる電流の方向と45度の角度をなすようにし、MR素
子1の動作が最適となるようにしている。
Incidentally, reference numeral 5 denotes a permanent magnet disposed close to and facing the MR element 1, so that the permanent magnet 5 applies a bias magnetic field to the MR element 1. This permanent magnet 5 is connected to a magnetic recording medium 6
The sensitivity of the MR element 1 to signals from the MR element 1 is increased, and the response is brought closer to a linear response. That is, since the change in resistance value of the MR element 1 under a magnetic field is quadratic, a bias magnetic field is applied in the height direction of the MR element 1 using the permanent magnet 5, and the direction of magnetization is changed to M'R. It is made to form an angle of 45 degrees with the direction of the current flowing through the element 1, so that the operation of the MR element 1 is optimized.

しかし、第1図に示す構造のMRヘッドには最適なバイ
アス磁界強度の範囲が狭く、永久磁石の位置の制御が困
難であるという問題がある。
However, the MR head having the structure shown in FIG. 1 has a problem in that the range of the optimum bias magnetic field strength is narrow and it is difficult to control the position of the permanent magnet.

1だ、多チャンネルとした場合には、すべてのMR素子
に対して磁界強度が同一になるようにバイアス磁界をか
けることが容易でないという欠点がある。
1. When using multiple channels, there is a drawback that it is not easy to apply a bias magnetic field so that the magnetic field strength is the same for all MR elements.

本発明は上記に鑑みてなされたもので、その目的とする
ところは、広範囲のバイアス磁界に対して良好な特性が
得られ、バイアス用永久磁石の強度および位置の制御が
容易な磁気抵抗効果ヘッドを提供することにある。
The present invention has been made in view of the above, and an object of the present invention is to provide a magnetoresistive head that has good characteristics over a wide range of bias magnetic fields and that allows easy control of the strength and position of the bias permanent magnet. Our goal is to provide the following.

本発明の特徴は、磁気抵抗効果素子の磁気記録媒体側と
反対仙]の端部にトラック幅方向に対して傾いている切
り込み溝を設け、上記磁気抵抗効果素子の切り込み溝を
設けた端部側後方にバイアス用永久磁石を配置した構成
とした点にある。
A feature of the present invention is that a cut groove is provided at the end of the magnetoresistive element on the side opposite to the magnetic recording medium, and the cut groove is provided at the end of the magnetoresistive element that is inclined with respect to the track width direction. The main feature is that a bias permanent magnet is placed at the rear of the side.

以下本発明を第2図、第5図、第7図に示した実施例お
よび第6図、第4図、第6図を用いて詳細に説明する。
The present invention will be described in detail below with reference to the embodiments shown in FIGS. 2, 5, and 7, and FIGS. 6, 4, and 6.

第2図は本発明のMRヘッドの一実施例を示す構造図で
、(a)は正面図、(b)は(a)の側面図である。第
2図において、21は基板、22はニッケルー鉄合金等
の磁気抵抗効果を有する厚さ0.05μmの薄膜からな
るMR素子で、MR素子22は、第2図(a)に示すよ
うに、磁気記録媒体6側と反対側の端部にトラック幅方
向と角度θ(実施例では30度)をなす複数個の切り込
み溝23を設けた平行四辺形としである。24は図示の
ように帯磁させたマグネタイト等の厚さ0.2μmの薄
膜がらなるバイアス用永久磁石で、MR素子22と永久
磁石24は、図示のように、基板21の表面に形成しで
ある。2,3はMR素子22に電流を流すための電極で
ある。なお、図に示す実施例では、第2図(a)におい
て、トラック幅W=150μm 。
FIG. 2 is a structural diagram showing an embodiment of the MR head of the present invention, in which (a) is a front view and (b) is a side view of (a). In FIG. 2, 21 is a substrate, 22 is an MR element made of a thin film of 0.05 μm thick having a magnetoresistive effect, such as a nickel-iron alloy, and the MR element 22 is, as shown in FIG. 2(a), It has a parallelogram shape with a plurality of grooves 23 formed at an angle θ (30 degrees in the embodiment) with the track width direction at the end opposite to the magnetic recording medium 6 side. 24 is a bias permanent magnet made of a thin film of magnetite or the like magnetized with a thickness of 0.2 μm as shown in the figure, and the MR element 22 and the permanent magnet 24 are formed on the surface of the substrate 21 as shown in the figure. . Reference numerals 2 and 3 are electrodes for passing current through the MR element 22. In the example shown in the figure, the track width W=150 μm in FIG. 2(a).

a=157’m+各切り込み溝23の溝幅1) =1 
/1 m 、低面から切り込み溝23マでの距離c=1
5μm、MR素子22の高さh−50μm としである
。なお、MR素子22に一様なバイアス磁界をかけるた
めには永久磁石24のトラック幅方向の幅はトラック幅
Wより大きいことが望ましい。
a = 157'm + groove width 1) of each cut groove 23 = 1
/1 m, distance from the bottom surface to the cut groove 23 m = 1
5 μm, and the height h of the MR element 22 is −50 μm. Note that in order to apply a uniform bias magnetic field to the MR element 22, it is desirable that the width of the permanent magnet 24 in the track width direction is larger than the track width W.

切り込みH25および永久磁石24により、MR素子2
2の磁化Mを電流iの方向に対して傾けることができ、
動作点を容易に最適にすることができる。なお、本発明
に係るM’Rヘッドは、磁性体の形状異方性効果を利用
しているので、a < h/5in0であることが望ま
しい。さらに、磁化の角度は、主に切り込み溝23の角
度θで決まるから、永久磁石24の位置および磁界強度
のはらつきは、MR素子22の特性にほとんど影響しな
い。
The notch H25 and the permanent magnet 24 allow the MR element 2
The magnetization M of 2 can be tilted with respect to the direction of the current i,
The operating point can be easily optimized. Note that since the M'R head according to the present invention utilizes the shape anisotropy effect of the magnetic material, it is desirable that a < h/5in0. Furthermore, since the angle of magnetization is mainly determined by the angle θ of the cut groove 23, the position of the permanent magnet 24 and fluctuations in magnetic field strength have little effect on the characteristics of the MR element 22.

以上のことを第6図を用いて説明する。第6図はバイア
ス磁界強度とMRヘッドの出力レベルおよび2次歪レベ
ルとの関係を示した線図で61は本発明に係るMRヘッ
ドの出力レベルの特性曲線であり、32は2次歪レベル
の特性曲線である。36は比較のために示した従来の第
1図に示すバイアス型MRヘッドの出力レベルの特性曲
線である。上記した本発明の実施例によればバイアス磁
界が1000以上のとき、2次歪が著しく改善され、そ
れ以上の磁界では、歪がその状態に保持される。一方、
出力レベルは、バイアス磁界を増大させてもなだらかな
変化を示し最適彦バイアス磁界の範囲が非常に広くなる
The above will be explained using FIG. 6. FIG. 6 is a diagram showing the relationship between the bias magnetic field strength and the output level and second-order distortion level of the MR head, 61 is the characteristic curve of the output level of the MR head according to the present invention, and 32 is the second-order distortion level. This is the characteristic curve of 36 is a characteristic curve of the output level of the conventional bias type MR head shown in FIG. 1, shown for comparison. According to the embodiment of the present invention described above, when the bias magnetic field is 1000 or more, the second-order distortion is significantly improved, and when the magnetic field is higher than that, the distortion is maintained in that state. on the other hand,
The output level shows a gentle change even when the bias magnetic field is increased, and the range of the optimum bias magnetic field becomes very wide.

これに対して従来のバイアス型M Rヘッドの出力レベ
ルは、バイアス磁界強度によって大きく変化し、最適バ
イアス範囲が非常に狭い。このように、本発明の実施例
によれば、非常に広範囲のバイアス磁界に対して良好な
特性を示し、バイアス用永久磁石24の強度および位置
の制御が容易になる。
On the other hand, the output level of a conventional bias type MR head varies greatly depending on the bias magnetic field strength, and the optimum bias range is very narrow. As described above, the embodiment of the present invention exhibits good characteristics over a very wide range of bias magnetic fields, and the strength and position of the bias permanent magnet 24 can be easily controlled.

第4図は本発明に係るMRヘッドの信号磁界に対するf
VIR素子の抵抗変化を示す特性線図である。
FIG. 4 shows f for the signal magnetic field of the MR head according to the present invention.
FIG. 3 is a characteristic diagram showing resistance changes of a VIR element.

第5図は本発明の他の実施例を示す構造図で(a、lは
正面図、(b)は側面図であり、第2図と同一部分は同
じ符号で示し、ここでは説明を省略する。第5図におい
ては、MR素子22については第2図と全く同様である
が、永久磁石としてはM R素子22の切り込み溝26
の長手方向と同一方向に磁化した永久磁石51としであ
る。したがって、永久磁石51もMR素子22と同様平
行四辺形の形をしている。これは、MR素子22の切り
込み溝23に平行にバイアス磁界を印加することを目的
としており、第5図に示す実施例によればMR素子22
の磁化の傾きを第2図の場合よりも安定にできるという
新たな効果があり、その他の効果は、第2図と同様であ
る。
FIG. 5 is a structural diagram showing another embodiment of the present invention (a and l are a front view, and (b) is a side view; the same parts as in FIG. In Fig. 5, the MR element 22 is exactly the same as Fig. 2, but the permanent magnet is
A permanent magnet 51 is magnetized in the same direction as the longitudinal direction. Therefore, like the MR element 22, the permanent magnet 51 also has a parallelogram shape. The purpose of this is to apply a bias magnetic field parallel to the cut groove 23 of the MR element 22, and according to the embodiment shown in FIG.
There is a new effect that the gradient of magnetization can be made more stable than in the case of FIG. 2, and other effects are the same as in FIG.

第6図は本発明に係るM Rヘッドの切り込み溝角度θ
と出力レベルおよび2次歪レベルとの関係を示した線図
で、61は出力レベルの特性曲線、62は2次歪レベル
の特性曲線である。出力レベルはθ−45度付近で最も
高くなり、2次歪レベルはθ=30度付近で最も低くな
る。これより、切り込み溝角度θを20〜60度の範囲
にとれば、感度低下は5 dB以内、2次歪レベルは4
0〜30ciBの間に収まり、実用上問題を生ずること
がないことがわかる。
Figure 6 shows the cut groove angle θ of the MR head according to the present invention.
6 is a diagram showing the relationship between output level and secondary distortion level, 61 is a characteristic curve of the output level, and 62 is a characteristic curve of the secondary distortion level. The output level is highest near θ-45 degrees, and the second-order distortion level is lowest near θ=30 degrees. From this, if the cut groove angle θ is set in the range of 20 to 60 degrees, the sensitivity decrease will be within 5 dB and the second-order distortion level will be 4.
It can be seen that it falls within the range of 0 to 30 ciB and causes no practical problems.

なお、上記した実施例では、永久磁石24または51を
MR素子22の後方(磁気記録媒体6側の反対側)に近
接させて配置したが、これは、MR。
In the above-described embodiment, the permanent magnet 24 or 51 was placed close to the rear of the MR element 22 (on the side opposite to the magnetic recording medium 6 side); however, this is MR.

素子22にバイアス磁界を印加するためであり、この配
置に限定されるものではない。例えば、多チャンネルM
Rヘッドにおいては、各MR素子の後方に1個の永久磁
石を配置し、すべてのMR素子にバイアス磁界を印加す
るようにしてもよいことはいうまでもない。
This arrangement is for applying a bias magnetic field to the element 22, and is not limited to this arrangement. For example, multi-channel M
It goes without saying that in the R head, one permanent magnet may be placed behind each MR element to apply a bias magnetic field to all MR elements.

第7図は本発明のさらに他の実施例を示す構造図で、(
a)は正面図、(b)は(a)の部分断面図であり、第
2図と同一部分は同じ符号で示しである。
FIG. 7 is a structural diagram showing still another embodiment of the present invention.
(a) is a front view, (b) is a partial sectional view of (a), and the same parts as in FIG. 2 are indicated by the same symbols.

ヘッドに適用したものであり、第7図において71.7
2はニッケルー鉄合金等からなる膜厚2μmの高透磁率
磁性体層(シールドJ#) 、 75.74は膜厚03
μmの8tOz(二酸化ケイ素)等の非磁性絶縁層であ
る。その他は第2図と同様である。
This is applied to the head, and is 71.7 in Figure 7.
2 is a high permeability magnetic layer (shield J#) made of nickel-iron alloy etc. with a film thickness of 2 μm, 75.74 is a film thickness of 03
It is a non-magnetic insulating layer of 8 tOz (silicon dioxide) or the like of μm. Other details are the same as in FIG. 2.

第7図に示す実施例によれば、短波長での出力が増大す
るとともに、MRヘッドの分解能を向上することができ
る。
According to the embodiment shown in FIG. 7, the output at short wavelengths can be increased and the resolution of the MR head can be improved.

以上説明したように、本発明によれば、広範囲のバイア
ス磁界に対して良好な特性が得られバイアス用永久磁石
の強度および位置の制御が容易になるという効果があり
、特に多チャンネルとした場合の特性のばらつきを著し
く改善できるという効果がある。
As explained above, according to the present invention, good characteristics can be obtained for a wide range of bias magnetic fields, and the strength and position of bias permanent magnets can be easily controlled, especially when multi-channel is used. This has the effect of significantly improving the dispersion of characteristics.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のM Rヘッドの斜視図、第2図は本発明
のR/IRヘッドの一実施例を示す構造図第3図はMR
ヘッドのバイアス磁界と出力レベルおよび2次歪レベル
との関係を示す線図、第4図は第2図のMRヘッドの信
号磁界に対するMR素子の抵抗変化を示す線図、第5図
は本発明の他の実施例を示す構造図、第6図は本発明に
係るMRヘッドの切り込み酵角度θと出力レベルおよび
2次歪レベルとの関係を示す線図、第7図は本発明のさ
らに他の実施例を示す構造図である。 2.6・・・電極 6・・・磁気記録媒体 21・・・基板 22・・・磁気抵抗効果素子(MR素子)25・・・切
り込み溝 24.51・・・永久磁石 τパ−゛−゛□ 戸−1 第 1 図 第2 図 (a)                (し)第 3
 閃 ノ(イアス石庇*  <oe) 第4図 H(Oe) 躬5図 第6 図 02σ30’   45°  6α 切り込み溝角度e 抽7図 (cl)                   (し
)1頁の続き @発 明 者 新井倍大 横浜市戸塚区吉田町292番地株 式会社日立製作所家電研究所内
Fig. 1 is a perspective view of a conventional MR head, Fig. 2 is a structural diagram showing an embodiment of the R/IR head of the present invention, and Fig. 3 is a perspective view of a conventional MR head.
A diagram showing the relationship between the bias magnetic field of the head, the output level, and the secondary distortion level, FIG. 4 is a diagram showing the resistance change of the MR element with respect to the signal magnetic field of the MR head of FIG. 2, and FIG. FIG. 6 is a diagram showing the relationship between the cutting angle θ, the output level, and the secondary distortion level of the MR head according to the present invention, and FIG. It is a structural diagram showing an example of. 2.6... Electrode 6... Magnetic recording medium 21... Substrate 22... Magnetoresistive element (MR element) 25... Cut groove 24.51... Permanent magnet τ part゛□ Door-1 Figure 1 Figure 2 Figure (a) (shi) 3rd
Senno (Iasu stone eave* <oe) Fig. 4 H (Oe) Fig. 5 Fig. 6 Fig. 02σ30' 45° 6α Cut groove angle e Drawing 7 (cl) (shi) Continued from page 1 @ Inventor Arai Hitachi, Ltd. Home Appliance Research Laboratory, 292 Yoshida-cho, Totsuka-ku, Baidai Yokohama City

Claims (1)

【特許請求の範囲】 1 磁界の変化を抵抗値の変化として感知する磁気抵抗
効果素子を備えた磁気抵抗効果ヘッドにおいて、前記磁
気抵抗効果素子の磁気記録媒体側と反対側の端部にトラ
ック幅方向に対して傾いている切り込み溝を設けてあり
、前記磁気抵抗効果素子の切り込み溝を設けた端部側後
方にバイアス用永久磁石を配置した構成としであること
を特徴とする磁気抵抗効果ヘッド。 2、 前記切り込み溝のトラック幅方向に対する角度が
20〜60度としである特許請求の範囲第1項記載の磁
気抵抗効果ヘッド。 3 前記バイアス用永久磁石は前記磁気抵抗効果素子に
印加する磁界強度が100e以上となるように構成しで
ある特許請求の範囲第1項または第2項記載の磁気抵抗
効果ヘッド。
[Scope of Claims] 1. In a magnetoresistive head equipped with a magnetoresistive element that senses changes in a magnetic field as changes in resistance value, a track width is provided at an end of the magnetoresistive element opposite to a magnetic recording medium side. A magnetoresistive head characterized in that it has a structure in which a cut groove is provided that is inclined with respect to the direction, and a bias permanent magnet is arranged at the rear of the end side of the magnetoresistive element where the cut groove is provided. . 2. The magnetoresistive head according to claim 1, wherein the cut groove has an angle of 20 to 60 degrees with respect to the track width direction. 3. The magnetoresistive head according to claim 1 or 2, wherein the bias permanent magnet is configured such that the magnetic field strength applied to the magnetoresistive element is 100e or more.
JP19850781A 1981-12-11 1981-12-11 Magnetoresistance effect head Pending JPS58100217A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19850781A JPS58100217A (en) 1981-12-11 1981-12-11 Magnetoresistance effect head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19850781A JPS58100217A (en) 1981-12-11 1981-12-11 Magnetoresistance effect head

Publications (1)

Publication Number Publication Date
JPS58100217A true JPS58100217A (en) 1983-06-14

Family

ID=16392278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19850781A Pending JPS58100217A (en) 1981-12-11 1981-12-11 Magnetoresistance effect head

Country Status (1)

Country Link
JP (1) JPS58100217A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4644430A (en) * 1984-08-27 1987-02-17 Eastman Kodak Company Slotted sensor in yoke-type magneto-resistive head
JPS63204506A (en) * 1987-02-17 1988-08-24 シーゲイト テクノロジー インターナショナル Non-magnetoresistance sensor and detection of non-magnetoresistance using the same
US5155644A (en) * 1985-12-27 1992-10-13 Sharp Kabushiki Kaisha Yoke thin film magnetic head constructed to avoid Barkhausen noises
EP0896324A1 (en) * 1992-08-25 1999-02-10 Seagate Technology International A magnetoresistive sensor & method of making the same
US5995309A (en) * 1995-03-06 1999-11-30 Mitsubishi Denki Kabushiki Kaisha Magnetic recording medium
US6282067B1 (en) * 1998-09-18 2001-08-28 Nippon Hoso Kyokai Magnetic reproducing head having a magnetoresistive effect

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4644430A (en) * 1984-08-27 1987-02-17 Eastman Kodak Company Slotted sensor in yoke-type magneto-resistive head
US5155644A (en) * 1985-12-27 1992-10-13 Sharp Kabushiki Kaisha Yoke thin film magnetic head constructed to avoid Barkhausen noises
JPS63204506A (en) * 1987-02-17 1988-08-24 シーゲイト テクノロジー インターナショナル Non-magnetoresistance sensor and detection of non-magnetoresistance using the same
EP0896324A1 (en) * 1992-08-25 1999-02-10 Seagate Technology International A magnetoresistive sensor & method of making the same
US5995309A (en) * 1995-03-06 1999-11-30 Mitsubishi Denki Kabushiki Kaisha Magnetic recording medium
US6282067B1 (en) * 1998-09-18 2001-08-28 Nippon Hoso Kyokai Magnetic reproducing head having a magnetoresistive effect

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