JPS6326354A - Vacuum deposition apparatus using direct current and high frequency discharge type arc evaporation system - Google Patents
Vacuum deposition apparatus using direct current and high frequency discharge type arc evaporation systemInfo
- Publication number
- JPS6326354A JPS6326354A JP16918286A JP16918286A JPS6326354A JP S6326354 A JPS6326354 A JP S6326354A JP 16918286 A JP16918286 A JP 16918286A JP 16918286 A JP16918286 A JP 16918286A JP S6326354 A JPS6326354 A JP S6326354A
- Authority
- JP
- Japan
- Prior art keywords
- power source
- work
- high frequency
- workpiece
- arc evaporation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001704 evaporation Methods 0.000 title claims description 21
- 230000008020 evaporation Effects 0.000 title claims description 16
- 238000001771 vacuum deposition Methods 0.000 title 1
- 239000000919 ceramic Substances 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims description 3
- 238000010891 electric arc Methods 0.000 abstract description 6
- 238000007740 vapor deposition Methods 0.000 abstract description 6
- 150000002500 ions Chemical class 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 229910000997 High-speed steel Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005513 bias potential Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は表面にセラミック・コーティングする蒸着装置
に係り、より詳細には、Ａｇ２Ｏ３などのセラミック皮
膜をアーク蒸発式によりワーク表面に形成するアーク蒸
発式蒸着装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a vapor deposition apparatus for coating a workpiece surface with ceramic, and more specifically, an arc evaporation system for forming a ceramic film such as Ag2O3 on the surface of a workpiece using an arc evaporation method. The present invention relates to a vapor deposition apparatus.
（従来の技術）
従来より、切削工具や金型などのワーク表面にセラミッ
ク・コーティングする蒸着法としてはアーク蒸発法やプ
ラズマＣＶＤ法などが知られている。(Prior Art) Arc evaporation, plasma CVD, and the like are conventionally known as vapor deposition methods for ceramic coating the surfaces of workpieces such as cutting tools and molds.
前者のアーク蒸発法は、例えば第２図に示すように、真
空槽１内にワーク２を配置すると共に蒸発させる金属か
らなるカソード３と１−リガー５とアーク直流電源７を
設け、更にワーク２にバイアスを印加するためのバイア
ス直流電源６を設けた装置構成とし、Ａｇ２Ｏ３のセラ
ミック皮膜を形成する場合、まず、真空排気後、カソー
ド（ＡＱ）３にアーク放電させ、ワーク２にバイアスを
印加してワーク表面をＡｆｉイオンによりスパッタリン
グし、次いで、反応ガス人口９からｃｏ２ガスを導入し
てＡαとＣ○２ガスとを反応させて絶縁皮膜であるＡｆ
１２０．を形成するものである。なお、図中、４は回転
台、８は赤外線表面温度計、１０は排気口である。The former arc evaporation method, for example, as shown in FIG. When forming a ceramic film of Ag2O3 using a device configured with a bias DC power supply 6 for applying a bias to the workpiece 2, first, after evacuation, arc discharge is caused to the cathode (AQ) 3, and a bias is applied to the workpiece 2. The surface of the workpiece is sputtered with Afi ions, and then CO2 gas is introduced from the reaction gas population 9 to cause Aα and C○2 gas to react to form an insulating film Af.
120. It forms the In addition, in the figure, 4 is a turntable, 8 is an infrared surface thermometer, and 10 is an exhaust port.
（発明が解決しようとする問題点Ｃ
しかし乍ら、このアーク蒸発法では、セラミック皮膜が
ワーク上に形成され、付着するものの、直流放電が持続
せず、所望の厚さのセラミック皮膜を形成しにくいとい
う欠点があった。(Problem to be solved by the invention C) However, in this arc evaporation method, although a ceramic film is formed and adhered to the workpiece, the DC discharge does not continue and the ceramic film of the desired thickness cannot be formed. The drawback was that it was difficult.
本発明は、従来のアーク蒸発法の欠点を解消し、蒸着中
途でアーク放電が停止することなく持続し、所望の厚さ
のＡｌ１１２０．などのセラミック皮膜をワーク表面に
形成し得るアーク蒸発式蒸着装置を提供することを目的
とするものである。The present invention overcomes the drawbacks of the conventional arc evaporation method, allows arc discharge to continue without stopping mid-deposition, and achieves a desired thickness of Al1120. The object of the present invention is to provide an arc evaporation type deposition apparatus capable of forming a ceramic film such as the above on the surface of a workpiece.
（問題点を解決するための手段）
上記目的を達成するため、本発明者は、従来のアーク蒸
発法において直流放電が持続しない原因を分析した結果
、ワークのバイアス電位が直流の（＝）であるため、ワ
ーク表面上に一旦セラミック絶縁皮膜が形成、付着して
しまうとバイアス効果がなくなってワークが帯電せず、
アークが発生しなくなることが判明した。そこで、バイ
アス電源として高周波電源を使用することを試みたとこ
ろ、ワーク表面に絶縁皮膜が形成されてもワークに自己
バイアスが発生して（−）電位となり、放電が持続する
ことを知見し、その際、ワーク表面のスパッタクリーニ
ングのために直流電源を従来と同様に設け、但し、切換
え可能にする必要があることを見い出し、ここに本発明
をなしたものである。(Means for Solving the Problem) In order to achieve the above object, the present inventor analyzed the reason why DC discharge does not persist in the conventional arc evaporation method, and found that the bias potential of the workpiece is DC (=). Therefore, once a ceramic insulation film is formed and adhered to the surface of the workpiece, the bias effect disappears and the workpiece is not charged.
It was found that arc no longer occurs. Therefore, when we tried using a high-frequency power source as a bias power source, we discovered that even if an insulating film was formed on the surface of the workpiece, a self-bias was generated on the workpiece, resulting in a (-) potential, and the discharge continued. In this case, it was discovered that it was necessary to provide a DC power source in the same way as in the past for sputter cleaning of the surface of the workpiece, but to make it switchable, and the present invention was developed based on this finding.
以下に本発明を実施例に基づいて詳細に説明する。The present invention will be explained in detail below based on examples.
（実施例）
第１図は本発明の一実施例に係るアーク蒸発式蒸着装置
の一例を示しており、後述のバイアス電源の構成の点を
除き、従来のアーク蒸発式蒸着装置と同様である。(Example) Fig. 1 shows an example of an arc evaporation type deposition apparatus according to an embodiment of the present invention, which is similar to a conventional arc evaporation type deposition apparatus except for the configuration of a bias power source, which will be described later. .
図中、１は反応ガス入口９及び排気口１０を備えた真空
槽で、内部にはワーク２が回転台４上に載置可能となっ
ていると共に、必要に応じてこのワーク２を加熱するた
めのヒータ１１が適所に配置されている。In the figure, 1 is a vacuum chamber equipped with a reaction gas inlet 9 and an exhaust port 10, inside which a workpiece 2 can be placed on a rotary table 4, and the workpiece 2 can be heated as necessary. A heater 11 for this purpose is placed at an appropriate location.
３は蒸発させる金属（Ａｎ等々）からなるカソードで直
流電源７に接続されており、このカソード３の近傍には
トリガー５が配置され、火花供給電源１２に接続されて
いる。８は赤外線表面温度計である。A cathode 3 made of a metal to be evaporated (such as An) is connected to a DC power source 7, and a trigger 5 is arranged near the cathode 3 and connected to a spark supply power source 12. 8 is an infrared surface thermometer.
ワーク２には、従来と同様、直流バイアス電源６が接続
されている。但し、スイッチ１３によってＯＮ、ＯＦＦ
可能となっていると共に、マツチ−３＝
ング回路１４を介して高周波電源１５がワーク２に接続
されており、スイッチ１６によってＯＮ、ＯＦＦ可能と
なっている。A DC bias power supply 6 is connected to the workpiece 2 as in the conventional case. However, it can be turned on and off by switch 13.
In addition, a high frequency power source 15 is connected to the workpiece 2 via a matching circuit 14, and can be turned on and off by a switch 16.
上記構成のアーク蒸発式蒸着装置は、例えば、Ａｆ１２
０．皮膜をワーク表面に形成させる場合、次のように作
用する。The arc evaporation type vapor deposition apparatus having the above configuration is, for example, Af12
0. When a film is formed on the surface of a workpiece, it works as follows.
（１） まず、ワーク２としてハイス又は超硬の切削
工具を回転台４に取付けた後、真空槽内をＩ Ｘ １０
’Ｔｏｒｒ以下に真空排気する。(1) First, after attaching a high-speed steel or carbide cutting tool as the workpiece 2 to the rotary table 4, the inside of the vacuum chamber is
' Evacuate to below Torr.
（２） ヒータ１１をオンにしてワーク２を４００〜
５００℃に加熱し、２０〜３０分間保持してワークを均
熱する。なお、この加熱温度はワークの焼戻温度（ハイ
スの場合は材質にもよるが、５２０〜５７０℃であり、
通常は５５０℃）よりも実質的に低い温度にコントロー
ルし、赤外線表面温度計８にて温度管理する。(2) Turn on the heater 11 and heat the work 2 to 400~
Heat to 500°C and hold for 20 to 30 minutes to soak the workpiece. Note that this heating temperature is the tempering temperature of the workpiece (in the case of high speed steel, it is 520 to 570°C depending on the material,
The temperature is controlled to be substantially lower than 550° C. (usually 550° C.), and the temperature is controlled using an infrared surface thermometer 8.
（３）所定時間保持した後、ヒータ１１をオフにして表
面のみを約３５０℃まで自然冷却させ、次いで、アーク
直流電源７及びトリガー５をオンにしてカソード（ＡＱ
）３にアーク放電を発生させる。これにより、ＡΩ粒子
、Ａ℃イオンが蒸発するが、このとき、直流バイアス電
源６をオンにしてスイッチ１３をオンにし、ワーク２に
−６００〜−１０００Ｖ印加する。これによってワーク
表面はＡ０イオンによりスパッタクリーニングされる。(3) After holding for a predetermined time, turn off the heater 11 to allow only the surface to cool naturally to about 350°C, then turn on the arc DC power supply 7 and trigger 5 to connect the cathode (AQ
) 3 to generate an arc discharge. As a result, AΩ particles and A°C ions are evaporated. At this time, the DC bias power supply 6 is turned on, the switch 13 is turned on, and -600 to -1000V is applied to the workpiece 2. As a result, the surface of the workpiece is sputter-cleaned by A0 ions.
（４） スパッタクリーニング後、直流電源７及びス
イッチ１３をオフにし、ワーク２のバイアスを高周波電
源１５に切替える。(4) After sputter cleaning, turn off the DC power supply 7 and switch 13, and switch the bias of the workpiece 2 to the high frequency power supply 15.
（５） 次いで、反応ガス人口９からＣＯ２ガスを０
．０１−０．０４Ｔｏｒｒになるまで導入した後、高周
波電源１５をオンにし、アークを発生させてＡｆｌを蒸
発させる。これにより、ＡＱとＣＯ２ガスが反応し、絶
縁皮膜のＡＱ２０３が形成される。(5) Next, remove CO2 gas from the reaction gas population 9 to 0.
．． After introducing the heat to a temperature of 0.01 to 0.04 Torr, the high frequency power source 15 is turned on to generate an arc and evaporate Afl. As a result, AQ and CO2 gas react, and an insulating film AQ203 is formed.
その際、ワーク上に絶縁皮膜が形成されても、高周波放
電による自己バイアス効果により、ワーク２は（−）に
帯電され、放電は持続する。At this time, even if an insulating film is formed on the workpiece, the workpiece 2 is charged to (-) due to the self-bias effect caused by the high-frequency discharge, and the discharge continues.
（６） アーク放電は安定して持続し、所定の時間後
に各電源をオフにして、セラミック皮膜の蒸着を完了す
る。(6) The arc discharge continues stably, and after a predetermined time, each power source is turned off to complete the deposition of the ceramic film.
以上の（１）〜（６）工程によってＡＱ２０３のセラミ
ック皮膜がワーク表面上に所望の厚さで形成することが
できる。なお、カソード材料が金属で、形成される皮膜
が絶縁物である化合物の場合は、いずれもこの方法で合
成することができる。また、蒸発源としては、電子ビー
ムやＨＣＤガンを用いてもよい。Through the above steps (1) to (6), a ceramic film of AQ203 can be formed on the workpiece surface to a desired thickness. Note that in the case where the cathode material is a metal and the formed film is a compound of an insulating material, both can be synthesized by this method. Moreover, an electron beam or an HCD gun may be used as the evaporation source.
（発明の効果）
以上詳述したように、本発明によれば、アーク蒸発式蒸
着装置におけるワークへのバイアス電源として直流電源
と高周波電源を切替可能に構成したので、従来のように
ワーク上に絶縁皮膜が形成、付着することによる放電停
止はなく、安定して放電を持続することができ、任意材
質のセラミック皮膜を所望厚さでワーク」二に合成する
ことが可能となる。(Effects of the Invention) As described in detail above, according to the present invention, the DC power source and the high frequency power source can be switched as the bias power source for the workpiece in the arc evaporation type evaporation apparatus, so that the bias power source for the workpiece can be switched between the DC power source and the high frequency power source. There is no discharge stoppage due to the formation and adhesion of an insulating film, and the discharge can be maintained stably, making it possible to synthesize a ceramic film of any material to a desired thickness on the workpiece.
第１図は本発明の一実施例に係るアーク蒸発式蒸着装置
を示す説明断面図、
第２図は従来のアーク蒸発式蒸着装置を示す説明断面図
である。
１・・・真空槽、２・・・ワーク、３・・・カソード、
４回転台、訃・・１−リガー、６・・・バイアス直流電
源、７・・・アーク直流電源、８・・赤外線表面温度計
、９・・・反応ガス入口、１０・・・排気口、１１・・
・ヒータ、１２・・・火花供給電源、１３．１６・・・
スイッチ、１５・・高周波電源。
特許出願人 株式会社神戸製鋼所
代理人弁理士 中 村 尚
第１図
第２図FIG. 1 is an explanatory sectional view showing an arc evaporation type deposition apparatus according to an embodiment of the present invention, and FIG. 2 is an explanatory sectional view showing a conventional arc evaporation type evaporation apparatus. 1... Vacuum chamber, 2... Workpiece, 3... Cathode,
4 Rotating table, 1-Rigger, 6... Bias DC power supply, 7... Arc DC power supply, 8... Infrared surface thermometer, 9... Reaction gas inlet, 10... Exhaust port, 11...
・Heater, 12...Spark supply power source, 13.16...
Switch, 15...High frequency power supply. Patent applicant Hisashi Nakamura, patent attorney representing Kobe Steel, Ltd. Figure 1 Figure 2
Claims (1)
ミック皮膜をアーク蒸発によって形成する装置において
、前記ワークに印加するバイアス電源として直流電源と
高周波電源を切換え可能に設けたことを特徴とする直流
、高周波放電型アーク蒸発式蒸着装置。A device for forming a ceramic film of a cathode metal on the surface of a workpiece placed in a vacuum chamber by arc evaporation, characterized in that a direct current power source and a high frequency power source are switchably provided as a bias power source applied to the workpiece, High frequency discharge type arc evaporation type evaporation equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16918286A JPS6326354A (en) | 1986-07-18 | 1986-07-18 | Vacuum deposition apparatus using direct current and high frequency discharge type arc evaporation system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16918286A JPS6326354A (en) | 1986-07-18 | 1986-07-18 | Vacuum deposition apparatus using direct current and high frequency discharge type arc evaporation system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6326354A true JPS6326354A (en) | 1988-02-03 |
Family
ID=15881762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16918286A Pending JPS6326354A (en) | 1986-07-18 | 1986-07-18 | Vacuum deposition apparatus using direct current and high frequency discharge type arc evaporation system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6326354A (en) |
-
1986
- 1986-07-18 JP JP16918286A patent/JPS6326354A/en active Pending
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