JPS63250152A - Layout of semiconductor integrated circuit - Google Patents

Layout of semiconductor integrated circuit

Info

Publication number
JPS63250152A
JPS63250152A JP8596387A JP8596387A JPS63250152A JP S63250152 A JPS63250152 A JP S63250152A JP 8596387 A JP8596387 A JP 8596387A JP 8596387 A JP8596387 A JP 8596387A JP S63250152 A JPS63250152 A JP S63250152A
Authority
JP
Japan
Prior art keywords
channel
width
transistor
channel width
shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8596387A
Other languages
Japanese (ja)
Inventor
Fumiaki Tsukuda
佃 文明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP8596387A priority Critical patent/JPS63250152A/en
Publication of JPS63250152A publication Critical patent/JPS63250152A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To optimize a channel width of a transistor for each gate inside a functional block and to prevent a shape of a layout block of the functional block from being distorted and becoming big by a method wherein the width of a channel region for all transistors included in each functional block is determined. CONSTITUTION:At a first step 11 a width W in a channel region 3 for all transistors inside a number of irregular functional blocks (circuits) is determined; at a next step 12, an average value Wt of the width W of these channels is determined. Then, at a step 13 it is judged whether the width W of the channel for a prescribed transistor is bigger than the average value Wt. First, if the width W of the channel is smaller than the average value Wt, only one transistor having this width W of the channel is arranged. If the width W of the channel is bigger than the average value, W/Wt=n is calculated at a step 15; (n) pieces of transistors which are connected in parallel are arranged. By this setup, a shape of the transistor is decided automatically; the shape of a block is not distorted or is made wastefully big.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体集積回路のレイアウト方法に関し、特に
計算機等を用いて自動的のレイアウトを行なうCAD 
(コンピュータによる設計支援)のトランジスタ形状を
任意に決定するレイアウト方法に関する。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a layout method for semiconductor integrated circuits, and in particular to a CAD method for automatically performing layout using a computer or the like.
This invention relates to a layout method for arbitrarily determining the shape of a transistor (computer-aided design).

〔従来の技術〕[Conventional technology]

近年、半導体集積回路装置において、この半導体装置内
の機能ブロック等を自動的にレイアウトする手段の研究
、開発が盛んに行なわれている。
2. Description of the Related Art In recent years, research and development of means for automatically laying out functional blocks, etc. within a semiconductor integrated circuit device has been actively conducted.

この場合、ROM、RAM、PLAなどの機能ブロック
は規則4的なトランジスタ配置を組合せて機能できるが
、規則性のないアナログ回路などは、多種類の機能ブロ
ックが含まれている。
In this case, functional blocks such as ROM, RAM, and PLA can function by combining regular transistor arrangements, but non-regular analog circuits include many types of functional blocks.

従来のレイアウト方法として、トラ〉・ジスタの配置、
配線には色々な手段が開発されているが、トランジスタ
の形状については一律の形状を用いた手法が多く、多少
自由性を持なぜなものでも、相対形状は一定であり、ト
ランジスタのチャネル幅、チャネル長を変数として配置
するレイアウト方法により実現している。
Conventional layout methods include the placement of tigers and jistas,
Various methods have been developed for wiring, but most methods use a uniform shape for the transistor shape, and even if there is some flexibility, the relative shape is constant, and the channel width of the transistor, This is achieved using a layout method that uses the channel length as a variable.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来のレイアウト方法は、トランジスタ形状を
固定している為、対象となる機能ブロック内の各種ゲー
トの最適なトランジスタのディメンジョンを確保できず
、各機能ブロックの動作スピード等の特性を充分に満足
できない欠点がある。また、チャネル幅、チャネル長を
変数とするレイアウト方法でも、相対形状が一定である
ため、各ブロック内、各種ゲートのトランジスタのチャ
ネル幅の差異により各トランジスタ形状の大きさが異な
る為、機能ブロックのレイアウトブロック形状がいびつ
になったり、レイアウト内にむだな空間でき、レイアウ
トブロックが大きくなるという欠点がある。
Since the conventional layout method described above fixes the transistor shape, it is not possible to secure the optimal transistor dimensions for each gate in the target functional block, and it is not possible to ensure that the characteristics such as operating speed of each functional block are fully satisfied. There is a drawback that it cannot be done. In addition, even in a layout method that uses channel width and channel length as variables, the relative shape is constant, so the size of each transistor shape differs due to the difference in channel width of transistors of various gates in each block. This has the disadvantage that the shape of the layout block becomes distorted, waste space is created in the layout, and the layout block becomes larger.

本発明の目的は、このような欠点を除き、機能ブロック
内の各種ゲートの1−ランジスタチャネル幅を、最適化
し、かつ機能ブロックのレイアウトブロックの形状を歪
んだり、大きくしないようにした半導体集積回路のレイ
アウト方法を提供することにある。
An object of the present invention is to eliminate such drawbacks, to provide a semiconductor integrated circuit in which the 1-transistor channel width of various gates in a functional block is optimized, and the shape of the layout block of the functional block is not distorted or enlarged. The purpose is to provide a layout method.

〔問題点を解決するための手段〕 本発明の構成は、複数の規則性のない回路ブロックを含
む半導体集積回路のレイアウト方法において、前記各回
路ブロックに含まれる全てのトランジスタのチャネル領
域の幅を求め、これらチャネル幅の平均値を求め、これ
平均チャネル幅より小さいチャネル幅のトランジスタは
このチャネル幅の1個のチャネル領域を配置し、前記平
均チャネル幅より大きいチャネル幅のトランジスタはそ
の平均チャネル幅以下のチャネル幅のチャネル領域を並
列側接続して配置するか、その平均チャネル幅以下のチ
ャネル幅のチャネル領域をL字形にして配置することを
特徴とする。
[Means for Solving the Problems] The configuration of the present invention provides a layout method for a semiconductor integrated circuit including a plurality of irregular circuit blocks, in which the widths of the channel regions of all transistors included in each circuit block are For transistors with a channel width smaller than the average channel width, one channel region with this channel width is arranged, and for transistors with a channel width larger than the average channel width, the average value of these channel widths is determined. It is characterized in that channel regions having the following channel widths are connected in parallel and arranged, or channel regions having a channel width less than or equal to the average channel width are arranged in an L-shape.

〔実施例〕〔Example〕

次に本発明を図面により詳細に説明する。 Next, the present invention will be explained in detail with reference to the drawings.

第1図は本発明の一実施例を説明するフロー図、第2図
(a)、(b)は本実施例に用いるトランジスタ形状モ
デルを示すトランジスタのレイアウト図、第3図(a)
〜(d)は本実施例を4つの場合に適用したトランジス
タのレイアウト図である。第2図のトランジスタ形状モ
デルにおいて、1はゲート電極領域、2はドレイン領域
、3はチャネル長し、チャネル幅W1のチャネル領域、
4はソース領域を示している。
FIG. 1 is a flow diagram explaining one embodiment of the present invention, FIGS. 2(a) and (b) are transistor layout diagrams showing transistor shape models used in this embodiment, and FIG. 3(a)
-(d) are layout diagrams of transistors to which this embodiment is applied in four cases. In the transistor shape model shown in FIG. 2, 1 is a gate electrode region, 2 is a drain region, 3 is a channel region with a channel length and a channel width W1,
4 indicates a source area.

本実施例は、まず、第1のステップ11で、規則性のな
い多数の機能ブロック(回路)内にある全トランジスタ
のチャネル領域3の幅Wを求め、次のステップこれらチ
ャネル幅Wの平均値Wtを求める。次にステップ13で
所定のトランジスタについてそのチャネル幅Wが平均値
Wtより大きいか否かを判定する。
In this embodiment, first, in the first step 11, the width W of the channel region 3 of all transistors in a large number of irregular functional blocks (circuits) is determined, and in the next step, the average value of these channel widths W is calculated. Find Wt. Next, in step 13, it is determined whether the channel width W of a predetermined transistor is larger than the average value Wt.

まず、チャネル幅Wが平均値Wtより小さい場合には、
ステップ14で、第2図(a)の形状モデルに示すよ、
うに、このチャネル幅Wが1個だけのトランジスタ配置
とする。
First, when the channel width W is smaller than the average value Wt,
In step 14, as shown in the shape model of FIG. 2(a),
In other words, the transistor arrangement is such that the channel width W is only one.

次に、チャネル幅Wが平均値より大きい場合には、ステ
ップ15でW / W t = nを求め、nの小数点
以下を切上げた整数Nにより、W/N=W’を求め、第
2図(b)に示す形状モデルのようにN個並列接続した
トランジスタ配置とする。
Next, if the channel width W is larger than the average value, W/W t = n is determined in step 15, and W/N = W' is determined by rounding up the decimal point of n to the integer N, as shown in Fig. 2. As shown in the shape model shown in (b), N transistors are arranged in parallel.

第3図(a)、(b)は本実施例のトランジスタのチャ
ネル幅Wが平均値Wt以下の場合で、第2図(a)のよ
うに配置されたトランジスタのレイアウト図、第3図(
c)、(d)はそのチャネル幅Wt以上の場合で、第2
図<b>のように配置されたトランジスタのレイアウト
図、第3図(C)がN=2、第3図(d)がN=4の場
合をそれぞれ示している。
FIGS. 3(a) and 3(b) are layout diagrams of the transistors arranged as shown in FIG. 2(a), and FIG.
c) and (d) are cases where the channel width is greater than Wt, and the second
A layout diagram of the transistors arranged as shown in FIG. 3(b), FIG. 3(C) shows the case where N=2, and FIG. 3(d) shows the case where N=4.

第4図(a)〜(C)は本発明の他の実施例を説明する
トランジスタのレイアウト図である。第4図(a)、(
C)は第3図(a)、(d)の場合と同様であるが、第
4図(b)はトランジスタのチャネル幅Wが平均チャネ
ル幅Wtより大きく、かつ、W/Wtが2未満の場合の
配置を示している。この場合、チャネル領域3の逆り字
形、またはL字形に配置したものである。すなわち、チ
ャネルWtとチャネル幅W 11とを加えたものがこの
場合チャネルWとなった場合であり、この時にはレイア
ウトの面積を第3図(c)の場合よりも少なくすること
が出来る。
FIGS. 4(a) to 4(C) are layout diagrams of transistors illustrating another embodiment of the present invention. Figure 4(a), (
C) is the same as in FIGS. 3(a) and (d), but in FIG. 4(b), the channel width W of the transistor is larger than the average channel width Wt, and W/Wt is less than 2. It shows the arrangement of cases. In this case, the channel region 3 is arranged in an inverted or L-shape. That is, in this case, the channel W is the sum of the channel Wt and the channel width W11, and in this case, the layout area can be made smaller than in the case of FIG. 3(c).

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、CADをLSIの設計に
用いる際、トランジスタのチャネル長か異なるトランジ
スタを複数有する機能ブロック内のトランジスタ形状を
自動的に決定されると共に、ブロック形状を歪めたり、
無駄に大きくすることがないという効果がある。
As explained above, when using CAD for LSI design, the present invention automatically determines the shape of a transistor in a functional block that has a plurality of transistors with different channel lengths, and also automatically determines the shape of a transistor in a functional block that has a plurality of transistors with different channel lengths.
This has the effect of not increasing the size unnecessarily.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を説明するフロー図、第2図
(a)、(b)は本実施例に用いる2つのトランジスタ
形状モデルの配置図、第3図(a)〜(d)は本実施例
を4つの場合に適用したトランジスタ形状図、第4図(
a)〜(C)は本発明の他の実施例を適用したトランジ
スタ形状図である。 1・・・ゲート電極領域、2・・・ドレイン領域、3・
・・チャネル領域、4・・・ソース領域、5・・・拡散
領域、11〜15・・・ステップ、W・・・チャネル幅
、Ll・・・チャネル長、L2・・・ゲート電極つき出
し長、L3・・・ソース、ドレイン領域幅。 代理人 弁理士 内 原  晋74ミ ゛勾 \−一
FIG. 1 is a flow diagram explaining one embodiment of the present invention, FIGS. 2(a) and (b) are layout diagrams of two transistor shape models used in this embodiment, and FIGS. 3(a) to (d). ) is a transistor shape diagram in which this embodiment is applied to four cases, and Fig. 4 (
a) to (C) are diagrams of transistor shapes to which other embodiments of the present invention are applied. 1... Gate electrode region, 2... Drain region, 3...
...Channel region, 4...Source region, 5...Diffusion region, 11-15...Step, W...Channel width, Ll...Channel length, L2...Gate electrode protrusion length , L3... Source and drain region width. Agent Patent Attorney Susumu Uchihara 74mm

Claims (1)

【特許請求の範囲】[Claims] 複数の規則性のない回路ブロックを含む半導体集積回路
のレイアウト方法において、前記各回路ブロックに含ま
れる全てのトランジスタのチャネル領域の幅を求め、こ
れらチャネル幅の平均値を求め、この平均チャネル幅よ
り小さいチャネル幅のトランジスタはこのチャネル幅の
1個のチャネル領域を配置し、前記平均チャネル幅より
大きいチャネル幅のトランジスタはその平均チャネル幅
以下のチャネル幅のチャネル領域を並列個接続して配置
するか、その平均チャネル幅以下のチャネル幅のチャネ
ル領域をL字形にして配置することを特徴とする半導体
集積回路のレイアウト方法。
In a layout method for a semiconductor integrated circuit including a plurality of irregular circuit blocks, the widths of the channel regions of all the transistors included in each circuit block are determined, the average value of these channel widths is determined, and from this average channel width, A transistor with a small channel width is arranged with one channel region having this channel width, and a transistor with a channel width larger than the average channel width is arranged with channel regions having a channel width less than or equal to the average channel width connected in parallel. A layout method for a semiconductor integrated circuit, characterized in that channel regions having a channel width less than or equal to the average channel width are arranged in an L-shape.
JP8596387A 1987-04-07 1987-04-07 Layout of semiconductor integrated circuit Pending JPS63250152A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8596387A JPS63250152A (en) 1987-04-07 1987-04-07 Layout of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8596387A JPS63250152A (en) 1987-04-07 1987-04-07 Layout of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS63250152A true JPS63250152A (en) 1988-10-18

Family

ID=13873392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8596387A Pending JPS63250152A (en) 1987-04-07 1987-04-07 Layout of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS63250152A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6209119B1 (en) 1997-04-10 2001-03-27 Matsushita Electric Industrial Co., Ltd. Apparatus and method for synthesizing module
JP2014022463A (en) * 2012-07-13 2014-02-03 Toshiba Corp Solid-state image pickup device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4879984A (en) * 1971-12-30 1973-10-26
JPS5526680A (en) * 1978-08-16 1980-02-26 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS6037159A (en) * 1983-08-08 1985-02-26 Nec Ic Microcomput Syst Ltd Mos integrated circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4879984A (en) * 1971-12-30 1973-10-26
JPS5526680A (en) * 1978-08-16 1980-02-26 Mitsubishi Electric Corp Semiconductor integrated circuit
JPS6037159A (en) * 1983-08-08 1985-02-26 Nec Ic Microcomput Syst Ltd Mos integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6209119B1 (en) 1997-04-10 2001-03-27 Matsushita Electric Industrial Co., Ltd. Apparatus and method for synthesizing module
JP2014022463A (en) * 2012-07-13 2014-02-03 Toshiba Corp Solid-state image pickup device

Similar Documents

Publication Publication Date Title
US8286114B2 (en) 3-dimensional device design layout
USRE39469E1 (en) Semiconductor integrated circuit with mixed gate array and standard cell
US5745374A (en) Layout method for semiconductor integrated circuit and layout apparatus for semiconductor integrated circuit
US7939858B2 (en) Semiconductor device with a transistor having different source and drain lengths
US7178114B2 (en) Scripted, hierarchical template-based IC physical layout system
KR900000202B1 (en) Manufacturing of semiconductor integrated circuit device
JP2509755B2 (en) Semiconductor integrated circuit manufacturing method
US9659920B2 (en) Performance-driven and gradient-aware dummy insertion for gradient-sensitive array
JP2001127161A (en) Integrated circuit
JPS63250152A (en) Layout of semiconductor integrated circuit
US5388054A (en) Semiconductor integrated circuit fabrication method
US4791609A (en) Semiconductor integrated circuit device
US5621653A (en) Method of and an apparatus for converting layout data in conductive portions
US6780745B2 (en) Semiconductor integrated circuit and method of manufacturing the same
JP4334891B2 (en) Connectable transistor cell structure
US20050145887A1 (en) Semiconductor device
JP2001244342A (en) Layout method for integrated circuit, integrated circuit and
JPH10261781A (en) Semiconductor device and system
JP2003007827A (en) Semiconductor integrated circuit device
JPH0296371A (en) Semiconductor device
JP4544230B2 (en) Semiconductor integrated circuit
JPH02246421A (en) Semiconductor integrated circuit
JP2000299382A (en) Layout cell for semiconductor integrated circuit
JPH096826A (en) Method for designing semiconductor integrated circuit
JPH10214903A (en) Layout method of standard cell