JPS63249331A - Microwave plasma cvd system - Google Patents

Microwave plasma cvd system

Info

Publication number
JPS63249331A
JPS63249331A JP62084152A JP8415287A JPS63249331A JP S63249331 A JPS63249331 A JP S63249331A JP 62084152 A JP62084152 A JP 62084152A JP 8415287 A JP8415287 A JP 8415287A JP S63249331 A JPS63249331 A JP S63249331A
Authority
JP
Japan
Prior art keywords
plasma
reaction chamber
microwaves
waveguide
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62084152A
Other languages
Japanese (ja)
Other versions
JP2532239B2 (en
Inventor
Norimitsu Sanhongi
法光 三本木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP62084152A priority Critical patent/JP2532239B2/en
Publication of JPS63249331A publication Critical patent/JPS63249331A/en
Application granted granted Critical
Publication of JP2532239B2 publication Critical patent/JP2532239B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To enable larger plasma to be generated, by providing a reaction chamber at the distal end of a waveguide, the reaction chamber having a specific construction capable of increasing plasma sufficiently. CONSTITUTION:A vacuum vessel 8 for generating plasma is provided at the tip end of a waveguide 1 guiding plasma generating microwaves, and a reaction chamber 9 having therein a tapered guide 5 for gradually enlarging the electric field of microwaves is provided within the vacuum vessel 8. Within the reaction chamber 9, there is arranged a table 10 for holding a substrate and there is also provided a resonance plate 11 for causing plasma to be generated efficiently on the substrate. The resonance plate has fan adjuster 12 so that it can be adjusted in the direction along which microwaves advance. In this manner, it is possible to generate plasma of a size of phi100-200 mm.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、マイクロ波を用いたプラズマCVD装置に関
する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a plasma CVD apparatus using microwaves.

〔発明の概要〕[Summary of the invention]

マイクロ波プラズマCVD装置において、従来より大き
なプラズマが発生可能な、大型マイクロ波プラズマCV
 D vt置についての発明を示す。
Large microwave plasma CVD equipment that can generate larger plasma than conventional microwave plasma CVD equipment
This shows an invention regarding the D vt position.

〔従来の技術〕[Conventional technology]

従来、第1図に示す様に導波管lの中央に石英管2から
なる反・心室を設け、マイクロ波発振機から発振したマ
イクロ波を導波管を通して導き、導波管と石英管が交わ
る中央付近にプラズマを発生させるマイクロ波プラズマ
CVD装置が知られていた0例えば、特開昭59−30
98にこのような従来のマイクロ波プラズマCVD装置
の構造が開示されている。
Conventionally, as shown in Fig. 1, a ventricle made of quartz tube 2 is provided in the center of a waveguide l, and microwaves oscillated from a microwave oscillator are guided through the waveguide, and the waveguide and quartz tube are connected. A microwave plasma CVD apparatus that generates plasma near the center of the intersection is known.
No. 98 discloses the structure of such a conventional microwave plasma CVD apparatus.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来技術において、例えば2.450)lzの
マイクロ波を用いるのが一般的であるが、本周波数では
、導波管幅は約150鰭であり、該導波管を貫通しプラ
ズマを発生させるための石英管径は、マイクロ波の漏洩
を防ぎ効率よくプラズマを発生させるのに最大φ60鶴
である。一般的には導波管幅の1/3といわれている。
In the above-mentioned conventional technology, it is common to use microwaves of, for example, 2.450) lz, but at this frequency, the waveguide width is approximately 150 fins, and the waveguide can be penetrated to generate plasma. The diameter of the quartz tube used for this purpose is a maximum diameter of φ60 in order to prevent microwave leakage and efficiently generate plasma. It is generally said to be 1/3 of the waveguide width.

それ故、結果的にプラズマの大きさは石英管径以下に制
限され、同時に合成可能な面積は、最大でもφ601−
以下となる。
Therefore, as a result, the size of the plasma is limited to less than the diameter of the quartz tube, and the area that can be synthesized at the same time is at most φ601-
The following is true.

このような合成装置は、各種薄膜の合成に用いる上で量
産上の大きな問題点となる。
Such a synthesis apparatus poses a major problem in mass production when used to synthesize various thin films.

〔問題点を解決するための手段〕[Means for solving problems]

以上のように、導波管の一部に穴を開は密閉された石英
管を貫通させ、石英管内にプラズマを発生する方法では
プラズマを大きくする事は困難であるので、導波管の終
端に、プラズマを充分大きくできる反応室を設け、係る
反応室内には薄膜を合成する基板を保持する試料台を有
する0反応室はプラズマを大きくするため、マイクロ波
を均一に拡大するための導波管終端からのテーパ状に拡
大した案内部と、試料台でプラズマが発生し基板を充分
包み込むよう上下方向に調整可能な共振板′を有する。
As mentioned above, it is difficult to increase the size of the plasma by making a hole in a part of the waveguide, passing through the sealed quartz tube, and generating plasma inside the quartz tube. In order to increase the size of the plasma, a reaction chamber that can make the plasma sufficiently large is provided, and the reaction chamber has a sample stage that holds the substrate on which the thin film will be synthesized. It has a tapered guide section extending from the end of the tube, and a resonant plate' which can be adjusted vertically so that plasma is generated on the sample stage and sufficiently wraps around the substrate.

〔作用〕[Effect]

導波管終端から反応室内に導かれたマイクロ波の電界は
、テーパ案内部によって進行方向に垂直な両面方向に徐
々に所望する大きさまで拡げられる。それと同時に、基
板を通過するマイクロ波を反射し、再び基板に返り共振
させるための共振板を、共振効果が最大となるようマイ
クロ波の進行方向の位置調整を行うと、基板位置で基板
を包み込むのに充分大きなプラズマが発生する。
The electric field of the microwave guided into the reaction chamber from the end of the waveguide is gradually expanded to a desired magnitude in both directions perpendicular to the direction of travel by the tapered guide section. At the same time, the resonant plate that reflects the microwaves passing through the substrate and returns to the substrate to cause resonance is adjusted in the direction of microwave travel so that the resonance effect is maximized, and the plate wraps around the substrate at the substrate position. A large enough plasma is generated.

〔実施例〕〔Example〕

以下に本発明の実施例を図面に基づいて説明する。第2
図は、本発明の実施例である大型マイクロ波プラズマC
VD装置である。プラズマを発生するマイクロ波を導く
ための導波管1の終端に、プラズマを発生するための真
空容器8と核真空容器内に、マイクロ波の電界を徐々に
拡大するためのテーパ案内部5を有する反応室9を設け
る。導波管と真空容器と反応室は、石英などで出来たシ
ール板7によって隔てられ、反応室(真空容器)内の真
空を保持すると同時にマイクロ波を損失なく反応室内に
導く0反応室内には、外部よりガス導入口6を介して所
望のガスを導くことができ、又、排気口14によって真
空及び所定のガス圧に保持することができる。
Embodiments of the present invention will be described below based on the drawings. Second
The figure shows a large microwave plasma C which is an embodiment of the present invention.
It is a VD device. At the end of the waveguide 1 for guiding microwaves for generating plasma, a tapered guide section 5 for gradually expanding the electric field of the microwaves is provided in the vacuum vessel 8 for generating plasma and the nuclear vacuum vessel. A reaction chamber 9 is provided. The waveguide, the vacuum container, and the reaction chamber are separated by a sealing plate 7 made of quartz or the like, and there is a vacuum in the reaction chamber that maintains the vacuum in the reaction chamber (vacuum container) and at the same time guides the microwaves into the reaction chamber without loss. A desired gas can be introduced from the outside through the gas inlet 6, and a vacuum and a predetermined gas pressure can be maintained by the exhaust port 14.

反応室内には基板を保持するための試料台10が設置さ
れ、又、プラズマを基板に効率よく発生させるためのマ
イクロ波の進行方向に調整できるアジャスタ12を備え
た共振板11を装備している。更に、導波管、真空容器
9反応室は、ベースプレート15から離れて上下するこ
とができ、基板を試料台の上に難なく設置することがで
きる。
A sample stage 10 for holding a substrate is installed in the reaction chamber, and a resonance plate 11 is equipped with an adjuster 12 that can adjust the direction of microwave propagation in order to efficiently generate plasma on the substrate. . Furthermore, the waveguide and vacuum vessel 9 reaction chamber can be moved up and down apart from the base plate 15, allowing the substrate to be placed on the sample stage without difficulty.

〔発明の効果〕〔Effect of the invention〕

以上のような大型マイクロ波プラズマCVD装置を用い
ることにより、従来、最大でもφ60mのプラズマしか
つくれなかった、マイクロ波プラズマCVD装置が、φ
100〜200 mの大きさのプラズマを発生させるこ
とが可能となり、工業的価値は大変高い。
By using the above-mentioned large-scale microwave plasma CVD equipment, the microwave plasma CVD equipment, which conventionally could only produce plasma with a maximum diameter of 60 m, can now produce plasma with a maximum diameter of 60 m.
It becomes possible to generate plasma with a size of 100 to 200 m, and the industrial value is very high.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、従来のマイクロ波プラズマCVD装置、第2
図は、本発明の大型マイクロ波プラズマCVD装置を示
す、          以 玉出願人 セイコー電子
工業株式会社 フ 従来のマイク0漬7°フズマCVD侠置!f11図 大型マイ70液プ″7ズマCvDs置 32図
Figure 1 shows a conventional microwave plasma CVD apparatus,
The figure shows the large-scale microwave plasma CVD apparatus of the present invention. f11 large size my 70 liquid pump'' 7 Zuma CvDs 32 figure

Claims (1)

【特許請求の範囲】[Claims] 加熱源をマイクロ波とするCVD装置において、ガスを
真空封止する真空容器のマイクロ波導入口をシールし、
係る真空容器内にマイクロ波の共振を誘発する構造の共
振胴と共振をコントロールし、マイクロ波が漏洩しない
構造を有し、共振胴に添って摺動する共振板とから構成
されるマイクロ波プラズマCVD装置。
In a CVD device that uses microwaves as the heating source, seal the microwave inlet of the vacuum container that seals the gas in vacuum,
A microwave plasma consisting of a resonator shell having a structure that induces microwave resonance in a vacuum container, and a resonator plate that controls the resonance and has a structure that prevents microwave leakage and slides along the resonator shell. CVD equipment.
JP62084152A 1987-04-06 1987-04-06 Microwave plasma CVD device Expired - Fee Related JP2532239B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62084152A JP2532239B2 (en) 1987-04-06 1987-04-06 Microwave plasma CVD device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62084152A JP2532239B2 (en) 1987-04-06 1987-04-06 Microwave plasma CVD device

Publications (2)

Publication Number Publication Date
JPS63249331A true JPS63249331A (en) 1988-10-17
JP2532239B2 JP2532239B2 (en) 1996-09-11

Family

ID=13822531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62084152A Expired - Fee Related JP2532239B2 (en) 1987-04-06 1987-04-06 Microwave plasma CVD device

Country Status (1)

Country Link
JP (1) JP2532239B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100278999A1 (en) * 2009-05-01 2010-11-04 Tokyo Electron Limited Plasma process apparatus and plasma process method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100278999A1 (en) * 2009-05-01 2010-11-04 Tokyo Electron Limited Plasma process apparatus and plasma process method
US8683943B2 (en) * 2009-05-01 2014-04-01 Tokyo Electron Limited Plasma process apparatus and plasma process method
US9447926B2 (en) 2009-05-01 2016-09-20 Tokyo Electron Limited Plasma process method

Also Published As

Publication number Publication date
JP2532239B2 (en) 1996-09-11

Similar Documents

Publication Publication Date Title
JPS63107898A (en) Method for synthesizing diamond with plasma
JPS63249331A (en) Microwave plasma cvd system
JPH03197684A (en) Adjacent plasma cvd device
JPH0339480A (en) Ecr plasma device
JP3161788B2 (en) Diamond film synthesis equipment
JPS63235480A (en) Device for microwave plasma cvd
JP2000012290A (en) Plasma treatment device
JP2002016052A (en) Plasma processing apparatus
JPH04181646A (en) Microwave plasma device
JPH064898Y2 (en) Plasma equipment
JPH04154971A (en) Ecr plasma device
JPH04187596A (en) Device of producing diamond
JPH02119100A (en) Plasma apparatus
JPS6255924A (en) Plasma cvd device
JPS6240376A (en) Method for synthesizing cubic boron nitride
JPS63114119A (en) Plasma processing apparatus
JPS63118074A (en) Thin film forming device
JPS5833830A (en) Plasma deposition apparatus
JPS6343299A (en) Plasma generator utilizing electronic cyclotron resonance
JPH07142193A (en) Microwave plasma treatment device
JPH0544027A (en) Microwave plasma producer
JPH0370122A (en) Microwave plasma treatment device
JPH1050496A (en) Plasma treatment apparatus
JPH02115565U (en)
JPS63177525A (en) Plasma treatment and device therefor

Legal Events

Date Code Title Description
S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees