JPS63249331A - Microwave plasma cvd system - Google Patents
Microwave plasma cvd systemInfo
- Publication number
- JPS63249331A JPS63249331A JP62084152A JP8415287A JPS63249331A JP S63249331 A JPS63249331 A JP S63249331A JP 62084152 A JP62084152 A JP 62084152A JP 8415287 A JP8415287 A JP 8415287A JP S63249331 A JPS63249331 A JP S63249331A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- reaction chamber
- microwaves
- waveguide
- microwave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 239000000758 substrate Substances 0.000 abstract description 11
- 230000005684 electric field Effects 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、マイクロ波を用いたプラズマCVD装置に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a plasma CVD apparatus using microwaves.
マイクロ波プラズマCVD装置において、従来より大き
なプラズマが発生可能な、大型マイクロ波プラズマCV
D vt置についての発明を示す。Large microwave plasma CVD equipment that can generate larger plasma than conventional microwave plasma CVD equipment
This shows an invention regarding the D vt position.
従来、第1図に示す様に導波管lの中央に石英管2から
なる反・心室を設け、マイクロ波発振機から発振したマ
イクロ波を導波管を通して導き、導波管と石英管が交わ
る中央付近にプラズマを発生させるマイクロ波プラズマ
CVD装置が知られていた0例えば、特開昭59−30
98にこのような従来のマイクロ波プラズマCVD装置
の構造が開示されている。Conventionally, as shown in Fig. 1, a ventricle made of quartz tube 2 is provided in the center of a waveguide l, and microwaves oscillated from a microwave oscillator are guided through the waveguide, and the waveguide and quartz tube are connected. A microwave plasma CVD apparatus that generates plasma near the center of the intersection is known.
No. 98 discloses the structure of such a conventional microwave plasma CVD apparatus.
上述した従来技術において、例えば2.450)lzの
マイクロ波を用いるのが一般的であるが、本周波数では
、導波管幅は約150鰭であり、該導波管を貫通しプラ
ズマを発生させるための石英管径は、マイクロ波の漏洩
を防ぎ効率よくプラズマを発生させるのに最大φ60鶴
である。一般的には導波管幅の1/3といわれている。In the above-mentioned conventional technology, it is common to use microwaves of, for example, 2.450) lz, but at this frequency, the waveguide width is approximately 150 fins, and the waveguide can be penetrated to generate plasma. The diameter of the quartz tube used for this purpose is a maximum diameter of φ60 in order to prevent microwave leakage and efficiently generate plasma. It is generally said to be 1/3 of the waveguide width.
それ故、結果的にプラズマの大きさは石英管径以下に制
限され、同時に合成可能な面積は、最大でもφ601−
以下となる。Therefore, as a result, the size of the plasma is limited to less than the diameter of the quartz tube, and the area that can be synthesized at the same time is at most φ601-
The following is true.
このような合成装置は、各種薄膜の合成に用いる上で量
産上の大きな問題点となる。Such a synthesis apparatus poses a major problem in mass production when used to synthesize various thin films.
以上のように、導波管の一部に穴を開は密閉された石英
管を貫通させ、石英管内にプラズマを発生する方法では
プラズマを大きくする事は困難であるので、導波管の終
端に、プラズマを充分大きくできる反応室を設け、係る
反応室内には薄膜を合成する基板を保持する試料台を有
する0反応室はプラズマを大きくするため、マイクロ波
を均一に拡大するための導波管終端からのテーパ状に拡
大した案内部と、試料台でプラズマが発生し基板を充分
包み込むよう上下方向に調整可能な共振板′を有する。As mentioned above, it is difficult to increase the size of the plasma by making a hole in a part of the waveguide, passing through the sealed quartz tube, and generating plasma inside the quartz tube. In order to increase the size of the plasma, a reaction chamber that can make the plasma sufficiently large is provided, and the reaction chamber has a sample stage that holds the substrate on which the thin film will be synthesized. It has a tapered guide section extending from the end of the tube, and a resonant plate' which can be adjusted vertically so that plasma is generated on the sample stage and sufficiently wraps around the substrate.
導波管終端から反応室内に導かれたマイクロ波の電界は
、テーパ案内部によって進行方向に垂直な両面方向に徐
々に所望する大きさまで拡げられる。それと同時に、基
板を通過するマイクロ波を反射し、再び基板に返り共振
させるための共振板を、共振効果が最大となるようマイ
クロ波の進行方向の位置調整を行うと、基板位置で基板
を包み込むのに充分大きなプラズマが発生する。The electric field of the microwave guided into the reaction chamber from the end of the waveguide is gradually expanded to a desired magnitude in both directions perpendicular to the direction of travel by the tapered guide section. At the same time, the resonant plate that reflects the microwaves passing through the substrate and returns to the substrate to cause resonance is adjusted in the direction of microwave travel so that the resonance effect is maximized, and the plate wraps around the substrate at the substrate position. A large enough plasma is generated.
以下に本発明の実施例を図面に基づいて説明する。第2
図は、本発明の実施例である大型マイクロ波プラズマC
VD装置である。プラズマを発生するマイクロ波を導く
ための導波管1の終端に、プラズマを発生するための真
空容器8と核真空容器内に、マイクロ波の電界を徐々に
拡大するためのテーパ案内部5を有する反応室9を設け
る。導波管と真空容器と反応室は、石英などで出来たシ
ール板7によって隔てられ、反応室(真空容器)内の真
空を保持すると同時にマイクロ波を損失なく反応室内に
導く0反応室内には、外部よりガス導入口6を介して所
望のガスを導くことができ、又、排気口14によって真
空及び所定のガス圧に保持することができる。Embodiments of the present invention will be described below based on the drawings. Second
The figure shows a large microwave plasma C which is an embodiment of the present invention.
It is a VD device. At the end of the waveguide 1 for guiding microwaves for generating plasma, a tapered guide section 5 for gradually expanding the electric field of the microwaves is provided in the vacuum vessel 8 for generating plasma and the nuclear vacuum vessel. A reaction chamber 9 is provided. The waveguide, the vacuum container, and the reaction chamber are separated by a sealing plate 7 made of quartz or the like, and there is a vacuum in the reaction chamber that maintains the vacuum in the reaction chamber (vacuum container) and at the same time guides the microwaves into the reaction chamber without loss. A desired gas can be introduced from the outside through the gas inlet 6, and a vacuum and a predetermined gas pressure can be maintained by the exhaust port 14.
反応室内には基板を保持するための試料台10が設置さ
れ、又、プラズマを基板に効率よく発生させるためのマ
イクロ波の進行方向に調整できるアジャスタ12を備え
た共振板11を装備している。更に、導波管、真空容器
9反応室は、ベースプレート15から離れて上下するこ
とができ、基板を試料台の上に難なく設置することがで
きる。A sample stage 10 for holding a substrate is installed in the reaction chamber, and a resonance plate 11 is equipped with an adjuster 12 that can adjust the direction of microwave propagation in order to efficiently generate plasma on the substrate. . Furthermore, the waveguide and vacuum vessel 9 reaction chamber can be moved up and down apart from the base plate 15, allowing the substrate to be placed on the sample stage without difficulty.
以上のような大型マイクロ波プラズマCVD装置を用い
ることにより、従来、最大でもφ60mのプラズマしか
つくれなかった、マイクロ波プラズマCVD装置が、φ
100〜200 mの大きさのプラズマを発生させるこ
とが可能となり、工業的価値は大変高い。By using the above-mentioned large-scale microwave plasma CVD equipment, the microwave plasma CVD equipment, which conventionally could only produce plasma with a maximum diameter of 60 m, can now produce plasma with a maximum diameter of 60 m.
It becomes possible to generate plasma with a size of 100 to 200 m, and the industrial value is very high.
第1図は、従来のマイクロ波プラズマCVD装置、第2
図は、本発明の大型マイクロ波プラズマCVD装置を示
す、 以 玉出願人 セイコー電子
工業株式会社
フ
従来のマイク0漬7°フズマCVD侠置!f11図
大型マイ70液プ″7ズマCvDs置
32図Figure 1 shows a conventional microwave plasma CVD apparatus,
The figure shows the large-scale microwave plasma CVD apparatus of the present invention. f11 large size my 70 liquid pump'' 7 Zuma CvDs 32 figure
Claims (1)
真空封止する真空容器のマイクロ波導入口をシールし、
係る真空容器内にマイクロ波の共振を誘発する構造の共
振胴と共振をコントロールし、マイクロ波が漏洩しない
構造を有し、共振胴に添って摺動する共振板とから構成
されるマイクロ波プラズマCVD装置。In a CVD device that uses microwaves as the heating source, seal the microwave inlet of the vacuum container that seals the gas in vacuum,
A microwave plasma consisting of a resonator shell having a structure that induces microwave resonance in a vacuum container, and a resonator plate that controls the resonance and has a structure that prevents microwave leakage and slides along the resonator shell. CVD equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62084152A JP2532239B2 (en) | 1987-04-06 | 1987-04-06 | Microwave plasma CVD device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62084152A JP2532239B2 (en) | 1987-04-06 | 1987-04-06 | Microwave plasma CVD device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63249331A true JPS63249331A (en) | 1988-10-17 |
JP2532239B2 JP2532239B2 (en) | 1996-09-11 |
Family
ID=13822531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62084152A Expired - Fee Related JP2532239B2 (en) | 1987-04-06 | 1987-04-06 | Microwave plasma CVD device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2532239B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100278999A1 (en) * | 2009-05-01 | 2010-11-04 | Tokyo Electron Limited | Plasma process apparatus and plasma process method |
-
1987
- 1987-04-06 JP JP62084152A patent/JP2532239B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100278999A1 (en) * | 2009-05-01 | 2010-11-04 | Tokyo Electron Limited | Plasma process apparatus and plasma process method |
US8683943B2 (en) * | 2009-05-01 | 2014-04-01 | Tokyo Electron Limited | Plasma process apparatus and plasma process method |
US9447926B2 (en) | 2009-05-01 | 2016-09-20 | Tokyo Electron Limited | Plasma process method |
Also Published As
Publication number | Publication date |
---|---|
JP2532239B2 (en) | 1996-09-11 |
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Legal Events
Date | Code | Title | Description |
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S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
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LAPS | Cancellation because of no payment of annual fees |