JPS63244580A - Thin film el device - Google Patents
Thin film el deviceInfo
- Publication number
- JPS63244580A JPS63244580A JP62076076A JP7607687A JPS63244580A JP S63244580 A JPS63244580 A JP S63244580A JP 62076076 A JP62076076 A JP 62076076A JP 7607687 A JP7607687 A JP 7607687A JP S63244580 A JPS63244580 A JP S63244580A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- electrode
- film
- light
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 42
- 239000000463 material Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 239000011159 matrix material Substances 0.000 claims description 4
- 239000003086 colorant Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 239000002131 composite material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 241000511976 Hoya Species 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- JCYWCSGERIELPG-UHFFFAOYSA-N imes Chemical compound CC1=CC(C)=CC(C)=C1N1C=CN(C=2C(=CC(C)=CC=2C)C)[C]1 JCYWCSGERIELPG-UHFFFAOYSA-N 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は平面型ディスプレイ・デバイスとしてコンピュ
ータシステムの端末機器その池の表示装置に静止画素や
動画像の表示手段として適用される薄膜ｇＬ素子に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film GL element applied as a display device for still pixels or moving images in terminal devices of computer systems and other display devices as flat display devices. It is something.
従来、この種の薄膜ＥＬ （エレクトロルミネセンス）
素子は、第２図に示すように透明なガラス等の絶縁性透
明基板１上にＩ ｎｚ ０３ｗ Ｓ ｎ Ｏｘ等から
なる透明電極２を複数帯状に平行に配列し、次Ｋ Ｙｚ
Ｏｓ ＋ Ｔａ２０ｓ等からなる第１の誘電体層３と
、発光中心として０．１〜１０．０重量−のＭｎ等をド
ープしたＺｎＳ等からなるＥＬ発光層４と、ＹｚＯｓ
、 Ｔａ！ｋｓ等からなる第２の誘電体／ｇ５とを順次
積層形成した後、Ａｔ 、 Ｔａ 、 Ｍｏ等からなる
背面電極６を前述した透明電極２と直交する方向に複数
帯状に平行に配列することによって形成されていた。そ
して、この透明電極２と背面電極６とが平面的に見て交
差する領域がパネルのｌ絵素に相当し、両電極２．６間
に交流電圧を印加することによシ、ＥＬ発光層４内に発
生した電界によって伝導帯に励起され、かつ加速されて
充分なエネルギーを得た電子が直接Ｍｎ発光中心を励起
し、この励起されたＭｎ発光中心が基底状態に戻る際に
黄橙色の発光を呈する。薄膜ＥＬ素子の発光色で黄橙色
以外の発光色は、前述したＥＬ発光層４の母体材料とド
ープ材料とを適当に選択することによって呈することが
でき、例えば母体材料がＺｎＳの場合、ドープ材料がＴ
ｂであれば緑色＋ ｓｒｎであれば赤色、Ｐｒであれば
白色の発光色を得ることができる。Conventionally, this type of thin film EL (electroluminescence)
As shown in FIG. 2, the device is constructed by arranging a plurality of transparent electrodes 2 made of I nz 03w S n Ox or the like in parallel on an insulating transparent substrate 1 made of transparent glass, etc.
A first dielectric layer 3 made of Os + Ta20s or the like, an EL light emitting layer 4 made of ZnS or the like doped with 0.1 to 10.0 weight - of Mn or the like as a luminescent center, and YzOs.
, Ta! After sequentially laminating the second dielectric material/g5 made of ks, etc., a plurality of back electrodes 6 made of At, Ta, Mo, etc. are arranged in parallel in a direction orthogonal to the transparent electrode 2. was being formed. The area where the transparent electrode 2 and the back electrode 6 intersect in plan view corresponds to the l picture element of the panel, and by applying an AC voltage between the two electrodes 2 and 6, the EL light emitting layer The electrons that are excited to the conduction band by the electric field generated within the 4 and accelerated to obtain sufficient energy directly excite the Mn luminescent center, and when the excited Mn luminescent center returns to the ground state, it produces a yellow-orange color. Exhibits luminescence. Emission colors other than yellow-orange from the thin film EL element can be achieved by appropriately selecting the base material and dope material of the EL emitting layer 4 described above. For example, when the base material is ZnS, the dope material is T
If b is green, srn is red, and Pr is white.
また、最近では、前述したような単色発光の薄膜ＥＬ素
子に加えて複数の発光色を呈する薄膜ＥＬ素子の提案が
いくつかなされている。例えば■特開昭５８−１０２４
８７号公報では発光色の異なるＥＬ発光層を２次元的に
所定のパターンで配設することによシ、２色以上の発光
色の表示を得ている。また■特開昭５８−２８１９４号
公報では発光色および発光しきい値電圧の異なる２種類
以上のＥＬ発光層を積層した多層構造で形成し、透明電
極と背面電極との間に印加する電圧を制御することによ
シ多色発光を行なっている。さらに■実開昭６１−５７
４９７号公報では所定の発光色のみを透過する色素フィ
ルタを設けて２色以上の発光−表示を行々っている。Furthermore, recently, in addition to the monochromatic thin-film EL devices as described above, several proposals have been made for thin-film EL devices that emit light in a plurality of colors. For example, ■ Japanese Patent Publication No. 58-1024
In Japanese Patent No. 87, display of two or more emitted colors is obtained by two-dimensionally arranging EL light emitting layers with different emitted colors in a predetermined pattern. In addition, Japanese Patent Application Laid-open No. 58-28194 discloses a multilayer structure in which two or more types of EL light emitting layers with different emission colors and emission threshold voltages are laminated, and the voltage applied between the transparent electrode and the back electrode is Multicolor light emission is achieved through control. Furthermore ■ Jitsukai 61-57
In Japanese Patent No. 497, a dye filter that transmits only a predetermined color of emitted light is provided to perform light emission and display of two or more colors.
前述した薄膜ＥＬ素子の多色化対策は、いずれも効果上
および製造上において種々の問題点があった。まず、前
述し九〇は、発光色の異なるＥＬ発光層パターン相互の
境界が明瞭に出にくく、発光の際、シャープな表示が得
にくい。また、■は、薄膜ＫＬ素子が積層された二重構
造となるため、単色発光の場合に比べて膜厚が厚くなり
、約２倍の駆動電圧が必要になるという問題点があった
。All of the above-mentioned measures for increasing the number of colors in thin film EL elements have various problems in terms of effectiveness and manufacturing. First, in the case of item 90 mentioned above, it is difficult to clearly see the boundaries between the EL light emitting layer patterns having different emission colors, and it is difficult to obtain a sharp display when emitting light. In addition, since the method (2) has a double structure in which thin film KL elements are stacked, the film thickness is thicker than in the case of monochromatic light emission, and there is a problem that approximately twice as much driving voltage is required.
さらに■は、薄膜ＥＬ素子の表示面側に色選択用フィル
タを設けることによシ、発光色の変換を行なう方式であ
る。このような方式においては、薄膜ＥＬ素子は広範囲
の波長域でかつ高輝度で発光する必要があるが、ＥＬ発
光層の組成分の中で最も発光スペクトルの波長域が広い
Ｚ ｎ Ｓ ： Ｍｎでさえ、その発光スペクトルの波
長域は５３００〜６７００Ａの範囲を覆うにとどまる。Furthermore, (2) is a method in which the emitted color is converted by providing a color selection filter on the display surface side of the thin film EL element. In such a method, the thin film EL element needs to emit light in a wide wavelength range and with high brightness, but ZnS:Mn, which has the widest wavelength range of the emission spectrum among the components of the EL emitting layer, Even so, the wavelength range of its emission spectrum only covers the range of 5300 to 6700A.
このように一般的に発光スペクトルの波長域の狭い組成
分からなるＥＬ発光層にフィルタを設けると、特に輝度
が低い波長域では一層輝度が低下するため、表示される
波長は限定されることになる。In this way, when a filter is provided on an EL light-emitting layer that generally consists of a composition with a narrow wavelength range of the emission spectrum, the brightness is further reduced especially in the wavelength range where the brightness is low, so the wavelengths that can be displayed are limited. .
したがって本発明は、このような事情に鑑みてなされた
ものでアリ、その目的は、解像度の高い２層発光層を有
する薄膜ＥＬ素子を提供することにある。Therefore, the present invention has been made in view of the above circumstances, and its purpose is to provide a thin film EL element having a two-layer light emitting layer with high resolution.
本発明による薄膜ＥＬ素子は、絶縁性透明基板の一方の
主表面上に第１透明電極と第２電極とを互いに交差する
方向にマ） ＩＪクス状に配列するとともに両電極間に
ＫＬ発光層と誘電体層とを配設し、前記絶縁性透明基板
の他方の主表面上に第３透明電極と第４電極とを互いに
交差する方向にマトリクス状に配列するとともに両電極
間ＫＥＬ発光層と誘電体層とを配設し、かつ前記第２電
極と前記第４電極のうち少なくとも一方を透明電極によ
シ構成する。The thin-film EL device according to the present invention has a first transparent electrode and a second electrode arranged in a matrix shape in a direction crossing each other on one main surface of an insulating transparent substrate, and a KL light-emitting layer between both electrodes. and a dielectric layer, and a third transparent electrode and a fourth electrode are arranged in a matrix on the other main surface of the insulating transparent substrate in a direction crossing each other, and a KEL light emitting layer between both electrodes. a dielectric layer, and at least one of the second electrode and the fourth electrode is configured as a transparent electrode.
本発明における薄膜ｇＬ素子は、第１の薄膜ＥＬ素子と
第２の薄膜ＢＬ素子とを独立して設けることによシ、複
数の発光色を呈することが可能となるにも拘らず、個々
のＥＬ発光層が分離して存在するために絵素の境界が鮮
明な発光を得ることができ、駆動電圧を低くかつ発光輝
度を高く維持することができる。Although the thin film gL element of the present invention can exhibit a plurality of emitted colors by independently providing the first thin film EL element and the second thin film BL element, the individual Since the EL light-emitting layer exists separately, it is possible to obtain light emission with clear boundaries between picture elements, and it is possible to maintain a low drive voltage and high light emission brightness.
以下、図面を用いて本発明の実施例を詳細に説明する。 Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図は本発明による薄膜ＥＬ素子の一実施例を示す断
面図である。同図において、アルミノシリケートガラス
（例えばＨＯＹＡ （東製ＮＡ４０）からなる絶縁性透
明基板１０の第１の主表面１１上Ｋｕ！！化物を混入し
た酸化インジウムからなる透明導電膜を真空蒸着法によ
り約２０００Ａ＠度の厚さに成膜した後、この透明導電
膜をフォトリソグラフィー法によシエッチング液として
塩酸と塩化第２鉄との混合溶液を用いて第１透明電極１
２を複数帯状〔第１図において左右方向〕に配列して形
成する。次に金属タンタルをスパッタターゲットとして
酸素ガスを約３０％混入したアルゴンガス（分圧：６×
ｌＱ Ｐａ）をスパッタ装置に導入し、高周波出力約
９Ｗ／ａｎ で反応性スパッタを行ない、Ｔａ！ＯＩ
＋からなる第１の誘電体層１３を約３０００Ａ程度の厚
さで成膜する。次にこの第１の誘電体層１３上に活性物
質として約０．５重量％程匹のＭｎを添加したＺｎＳ：
Ｍｎ焼結ベレットを蒸発源として真空蒸着法によシＺｎ
Ｓ： ＭｎからなるＫＬ発光層１４を約６０００Ａ程度
の厚さで成膜する。次に前述したｆＸｌの誘電体層１３
と同・ 様に反応性スパッタリング法によ、ＤＴａｔＯ
ｓ膜からなる第２の誘電体層１５を約３０００Ａ程度の
厚さで成膜する。次いでこの第２の誘電体層１５上ＫＡ
ｔ膜を真空蒸着法によシ約３０００Ｘ程度の厚さに成膜
した後、このＡｔ膜をフォトリソグラフィー法によシエ
ッチング液として硝酸と燐酸との混合溶液を用いて第２
電極１Ｇを複数帯状（第１図において紙面垂直方向）に
配列して形成する。FIG. 1 is a sectional view showing an embodiment of a thin film EL element according to the present invention. In the same figure, a transparent conductive film made of indium oxide mixed with Ku!! compound is deposited on the first main surface 11 of an insulating transparent substrate 10 made of aluminosilicate glass (for example, HOYA (NA40 manufactured by Tosei)) by vacuum evaporation. After forming a film to a thickness of 2000A@degrees, this transparent conductive film was formed into a first transparent electrode 1 by photolithography using a mixed solution of hydrochloric acid and ferric chloride as an etching solution.
2 are arranged in a plurality of strips (in the left-right direction in FIG. 1). Next, using metal tantalum as a sputtering target, argon gas (partial pressure: 6×
lQ Pa) was introduced into the sputtering equipment, reactive sputtering was performed with a high frequency output of approximately 9 W/an, and Ta! OI
A first dielectric layer 13 made of + is formed to a thickness of about 3000A. Next, on this first dielectric layer 13, about 0.5% by weight of Mn was added as an active substance to ZnS:
Zn was deposited using a vacuum evaporation method using a Mn sintered pellet as an evaporation source.
S: A KL light emitting layer 14 made of Mn is formed to a thickness of about 6000A. Next, the dielectric layer 13 of fXl mentioned above
Similarly, DTatO was obtained by reactive sputtering method.
A second dielectric layer 15 made of an S film is formed to a thickness of about 3000A. Then, on this second dielectric layer 15 KA
After forming a T film to a thickness of approximately 3000× by vacuum evaporation, this At film was etched using a mixed solution of nitric acid and phosphoric acid as an etching solution.
The electrodes 1G are arranged in a plurality of strips (in the direction perpendicular to the plane of the paper in FIG. 1).
したがって第１透明電極１２と第２電極１６とは従来と
同様に互いに直交するように複数帯状に配列している。Therefore, the first transparent electrode 12 and the second electrode 16 are arranged in a plurality of strips so as to be perpendicular to each other, as in the conventional case.
このようにして第１の薄膜ＥＬ素子１Ｔを形成する。引
き続き前述した絶縁性透明基板１０の第２の主表面２１
上に第１の薄膜ＥＬ素子１Ｔと基本的に同様な構成であ
る第２の薄膜ＥＬ素子２Ｔを第１の薄膜ＥＬ素子１Ｔと
同様の成膜手段を用いて形成する。まず、第２の主表面
２１上に絶縁性透明基板１０の垂直方向から見て第１の
薄膜ＥＬ素子１７における第１透明電極１２と整合する
ように錫酸化物を混入した酸化インジウムからなる厚さ
約２０００Ａ程度の第３透明電橿２２を形成し、次にＴ
ｉｍｅｓからなる厚さ約３０００Ａ程度の第１の誘電体
層２３を成膜し、次に活性物質として約１．５！量チの
Ｔｂを添加したＺＩＨ８：Ｔｂ焼結ベレットを蒸発源と
して真空蒸着法によ？） ｚｎｓ ａ Ｔｌ）からなる
厚さ約６０００Ａ程度のＥＬ発光層２４を成膜し、次１
ｃＴａ３０ｇからなる厚さ約３０００Ａ程度の第２の誘
電体層２５を成膜し、次いで絶縁性透明基板１０の垂直
方向から見て第１の薄膜ＥＬ素子１７における第２電極
１６と整合するように錫酸化物を混入した酸化インジウ
ムからなる厚さ約２０００Ａ程度の透明な第４電極２６
を形成することにより第２の薄１ｊＱＥＬ素子２７を形
成する。In this way, the first thin film EL element 1T is formed. Continuing on from the above-described second main surface 21 of the insulating transparent substrate 10
A second thin film EL element 2T having basically the same configuration as the first thin film EL element 1T is formed thereon using the same film forming means as the first thin film EL element 1T. First, a thickness of indium oxide mixed with tin oxide is formed on the second main surface 21 so as to match the first transparent electrode 12 in the first thin film EL element 17 when viewed from the vertical direction of the insulating transparent substrate 10. A third transparent electric wire 22 of about 2000A is formed, and then T
A first dielectric layer 23 with a thickness of about 3000 A made of IMES is deposited, and then an active material of about 1.5 A is formed. Using a vacuum evaporation method using a ZIH8:Tb sintered pellet with a small amount of Tb added as an evaporation source? ) An EL light emitting layer 24 having a thickness of about 6000 A made of
A second dielectric layer 25 made of 30 g of cTa and having a thickness of approximately 3000 Å is formed, and then is aligned with the second electrode 16 of the first thin film EL element 17 when viewed from the vertical direction of the insulating transparent substrate 10. A transparent fourth electrode 26 with a thickness of about 2000 A and made of indium oxide mixed with tin oxide.
A second thin 1jQEL element 27 is formed by forming.
このようにして製作された薄膜ＥＬ素子において、第１
ｃＤ薄ｉＥＬ素子１７は第１透明電極１２と第２電極１
６との間に交流電圧（１５０Ｖ）を印加することによシ
、ピーク波長的５８０ＯＡで黄橙色に発光した。他方、
第２の薄膜ＥＬ素子２７は透明な第４電極２６と第３透
明電極２２との間に交流電圧を印加することによシ、ピ
ーク波長的５５０ＯＡで緑色に発光した。また、第１の
薄膜ＥＬ素子１Ｔと第２の薄膜ＥＬ素子２Ｔとを同時に
発光させることによシ、黄橙色と緑色との合成色を呈す
ることもでき、駆動電圧を適当に変化させてやることに
よシ、その合成色の色調も変化させるととができる◎
なお、前述した実施例においては、構成材料。In the thin film EL device manufactured in this way, the first
The cD thin iEL element 17 has a first transparent electrode 12 and a second electrode 1.
By applying an alternating current voltage (150 V) between 6 and 6, it emitted yellow-orange light with a peak wavelength of 580 OA. On the other hand,
The second thin film EL element 27 emitted green light at a peak wavelength of 550 OA by applying an AC voltage between the transparent fourth electrode 26 and the third transparent electrode 22. Furthermore, by causing the first thin-film EL element 1T and the second thin-film EL element 2T to emit light simultaneously, a composite color of yellow-orange and green can be displayed, and the driving voltage can be changed appropriately. In particular, it is possible to change the tone of the composite color. In the above-mentioned embodiments, the constituent materials.
膜厚および成膜方法に限定されるものではない。The film thickness and film formation method are not limited.
すなわち、絶縁性透明基板１０については、ソーダライ
ムガラス等の多成分系ガラスもしくは石英ガラスでも良
い。また、第１透明電極１２．第３透明電極２２および
透明な第４電極２６については、Ｉｎｚｏａもしくはこ
れにＷを添加したものもしくはｓｎｏ、に１９ｂ、Ｆ等
を添加したものであっても良い。さらに第１の誘電体層
１３．２３および第２の誘電体層１５．２５については
、ＡｔｘＯｓ、 ５ｒＴｉＯｓ ＋ ＢａＴａｚ Ｏｓ
、 Ｙｊ Ｏｓ ｅ Ｈ２Ｏ２等の酸化物、Ｓｉ＠Ｎ
ａ、シリコンオキシナイト２イドもしくはこれらの複合
物であっても良い。また、ＥＬ発光層１４．２４につい
ては、母材としてＺｒｌＳｅ 。That is, the insulating transparent substrate 10 may be made of multi-component glass such as soda lime glass or quartz glass. Further, the first transparent electrode 12. The third transparent electrode 22 and the transparent fourth electrode 26 may be made of Inzoa or Inzoa to which W is added, or SNO to which 19b, F, etc. are added. Further, for the first dielectric layer 13.23 and the second dielectric layer 15.25, AtxOs, 5rTiOs + BaTaz Os
, YjOs e H2O2 and other oxides, Si@N
a, silicon oxynitride, or a composite thereof. Further, for the EL light emitting layer 14.24, ZrlSe is used as the base material.
ＣａＳ もしくはＳｒＳ等、ドーグ材料としてはＥｕ
・Ｓｍ ＋ Ｔｂ ＃ Ｔｍ等の希土類元素を使用して
も良い。また、異なった発光色を得るために２つのＥＬ
発光層１４と２４とは発光母体材あるいはドープ材料が
異なるように放膜する必要があるが、ＥＬ発光層１４と
２４とを同一の組成とすることによシ１輝度を向上させ
ることもできる。また、ＥＬ発光層１４．２４の成膜方
法については、真空蒸着法の（ｌにスパッタリング法も
しくはＭＯＣＶＤ法等を用いても良い。また、第２電極
１６については、Ｔａ、Ｎｉ ＊Ｎ１ＡＡ、ＮｔＣｒ等
の金属を使用しても良く、また、透明電極と同一材料を
使用しても良い。さらに第１透明電極１２６第３透明電
極２２と第２電極１６．第４電極２６をそれぞれ一定の
間隔を保持して形成する手段として湿式法の代りにＣＣ
ｔ４等のガスを主成分として用いるドライエツチング法
もしくはマスク蒸着法等を用いて複数帯状に形成しても
良い。CaS or SrS, etc., and Eu as a dogu material
- Rare earth elements such as Sm + Tb #Tm may be used. In addition, two ELs are used to obtain different luminescent colors.
Although the light-emitting layers 14 and 24 must be formed using different light-emitting base materials or doped materials, it is also possible to improve the luminance by making the EL light-emitting layers 14 and 24 have the same composition. . Further, as for the method of forming the EL light emitting layer 14.24, vacuum evaporation method (sputtering method or MOCVD method etc. may be used for l).As for the second electrode 16, Ta, Ni*N1AA, NtCr Alternatively, the same material as the transparent electrode may be used.Furthermore, the first transparent electrode 126, the third transparent electrode 22, the second electrode 16, and the fourth electrode 26 may be spaced at a constant interval. CC is used instead of the wet method as a means of holding and forming
A plurality of strips may be formed using a dry etching method or a mask evaporation method using a gas such as t4 as a main component.
以上説明したように本発明は、第１の薄膜ＥＬ素子と第
２の薄膜ＥＬ素子とを絶縁性透明基板の２つの主表面上
に独立して形成することにより、複数の発光色を呈する
ことができるとともに各々のＥＬ発光層が隣接して形成
されていないために個々の絵素の境界が明瞭である発光
表示を得ることができる。また、ＥＬ発光層を積層した
場合に比べてＥＬ発光層の膜厚が半分になるので、駆動
電圧を低くかつ発光輝度を高く維持することができる。As explained above, the present invention is capable of emitting a plurality of colors by independently forming a first thin film EL element and a second thin film EL element on two main surfaces of an insulating transparent substrate. In addition, since the EL light emitting layers are not formed adjacent to each other, it is possible to obtain a light emitting display in which boundaries between individual picture elements are clear. Furthermore, since the film thickness of the EL light emitting layer is half that of the case where the EL light emitting layers are laminated, the drive voltage can be kept low and the luminance can be maintained high.
さらに第１の薄膜ＥＬ素子および第２の薄膜ＥＬ素子の
それぞれのＥＥＬ発光層の母体材料とドープ材料とに同
一のものを採用することにより、従来の基板面片側のみ
に配設した単色発光の薄膜ＥＬ素子では輝度が低い場合
であっても輝度を向上させることができるなどの極めて
優れた効果が得られる０Furthermore, by using the same base material and dope material for the EEL emitting layers of the first thin film EL element and the second thin film EL element, it is possible to eliminate the monochromatic light emission that was previously provided only on one side of the substrate surface. Thin-film EL elements provide extremely excellent effects such as being able to improve brightness even when the brightness is low.
第１図は本発明による薄膜ＥＬ素子の一実施例を示す断
面図、第２図は従来の薄膜ＥＬ素子の構成を示す断面図
である。
１０・・・・絶縁性透明基板、１２・・・・第１透明電
槙、２２・・・・第３透明電極、１３゜２３・・・噛第
１の誘電体層、１４，２４・・・・ＥＬ発光層、１５．
２５＠・・・第２の誘電体層、１６・・・轡第２電極、
２６・・・・第４電極１． −−− ．１１・・・
・ｆｊｌＩＪｌの主表面、２１・・噛・第２の主表面、
１７・・・Φ第１の薄膜ＥＬ素子、２Ｔ・・・・第２の
薄膜ｇＬ素子。FIG. 1 is a sectional view showing an embodiment of a thin film EL device according to the present invention, and FIG. 2 is a sectional view showing the structure of a conventional thin film EL device. DESCRIPTION OF SYMBOLS 10... Insulating transparent substrate, 12... First transparent electrode, 22... Third transparent electrode, 13° 23... First dielectric layer, 14, 24... ...EL light emitting layer, 15.
25@... second dielectric layer, 16... 轡second electrode,
26...Fourth electrode 1. −−−． 11...
・Main surface of fjlIJl, 21 ・Second main surface,
17...Φ first thin film EL element, 2T... second thin film gL element.
Claims (2)
極と第２電極とを互いに交差する方向にマトリクス状に
配列するとともに両電極間にＥＬ発光層と誘電体層とを
配設してなる第１の薄膜ＥＬ素子と、前記絶縁性透明基
板の他方の主表面上に第３透明電極と第４電極とを互い
に交差する方向にマトリクス状に配列するとともに両電
極間にＥＬ発光層と誘電体層とを配設してなる第２の薄
膜ＥＬ素子とを備え、かつ前記第２電極と前記第４電極
のうち少なくとも一方を透明電極としたことを特徴とす
る薄膜ＥＬ素子。(1) A first transparent electrode and a second electrode are arranged in a matrix in a direction crossing each other on one main surface of an insulating transparent substrate, and an EL light emitting layer and a dielectric layer are arranged between the two electrodes. a first thin-film EL element, a third transparent electrode and a fourth electrode are arranged in a matrix in a direction crossing each other on the other main surface of the insulating transparent substrate, and EL light is emitted between the two electrodes. A thin film EL device comprising: a second thin film EL device formed by disposing a layer and a dielectric layer, and at least one of the second electrode and the fourth electrode is a transparent electrode.
少なくとも一方を、第１の薄膜ＥＬ素子と第２の薄膜Ｅ
Ｌ素子とで異ならせたことを特徴とする特許請求の範囲
第１項記載の薄膜ＥＬ素子。(2) At least one of the base material and dope material of the BL light emitting layer is used in the first thin film EL element and the second thin film E.
2. The thin film EL element according to claim 1, wherein the thin film EL element is different from the L element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62076076A JPS63244580A (en) | 1987-03-31 | 1987-03-31 | Thin film el device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62076076A JPS63244580A (en) | 1987-03-31 | 1987-03-31 | Thin film el device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63244580A true JPS63244580A (en) | 1988-10-12 |
Family
ID=13594716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62076076A Pending JPS63244580A (en) | 1987-03-31 | 1987-03-31 | Thin film el device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63244580A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011171068A (en) * | 2010-02-17 | 2011-09-01 | Panasonic Electric Works Co Ltd | Display device |
-
1987
- 1987-03-31 JP JP62076076A patent/JPS63244580A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011171068A (en) * | 2010-02-17 | 2011-09-01 | Panasonic Electric Works Co Ltd | Display device |
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