JPS63241901A - Manufacture of zinc oxide type arrestor element - Google Patents
Manufacture of zinc oxide type arrestor elementInfo
- Publication number
- JPS63241901A JPS63241901A JP62074291A JP7429187A JPS63241901A JP S63241901 A JPS63241901 A JP S63241901A JP 62074291 A JP62074291 A JP 62074291A JP 7429187 A JP7429187 A JP 7429187A JP S63241901 A JPS63241901 A JP S63241901A
- Authority
- JP
- Japan
- Prior art keywords
- zinc oxide
- oxide type
- phosphoric acid
- lightning arrester
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims description 38
- 239000011787 zinc oxide Substances 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 28
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 13
- 239000000243 solution Substances 0.000 claims description 11
- 238000010304 firing Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 3
- 150000003016 phosphoric acids Chemical class 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 235000011007 phosphoric acid Nutrition 0.000 description 14
- 239000003921 oil Substances 0.000 description 10
- 230000007613 environmental effect Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910000416 bismuth oxide Inorganic materials 0.000 description 4
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 4
- 238000010587 phase diagram Methods 0.000 description 4
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 3
- 241000282806 Rhinoceros Species 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、酸化亜鉛形避雷器用素子の表面部を緻密に
して耐環境性を向上させるための、酸化亜鉛形避雷器素
子の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a zinc oxide type lightning arrester element for making the surface portion of the zinc oxide type lightning arrester element dense and improving its environmental resistance.
第５図は、例えば特公昭５５−４８４４１号公報に示さ
れた従来の避雷器用素子を示し、図において、非直線抵
抗体（１）の側面に側面高抵抗層（２）、さらにガラス
層（３）が設けられている。非直線抵抗体（１）の上下
面には電極（４）が設けられている。FIG. 5 shows a conventional lightning arrester element disclosed, for example, in Japanese Patent Publication No. 55-48441. 3) is provided. Electrodes (4) are provided on the upper and lower surfaces of the non-linear resistor (1).
以上の構成において、側面抵抗層（２）は沿面放電を防
止し、放電耐量を大きくするために、非直線抵抗体（１
）の外周部に形成される。その組成は特公昭５５−４８
４４１号公報に示されているように、ＺｎＯ−８ｉ０２
−ＢｉｚＯ３−８ｂｚＯ３系混合物よりなる。これら混
合物を１０００℃〜１４００℃の温度範囲で焼成し、Ｚ
ｎｙＳｂｚＯｔ２なるスピネル粒子やＺｎ２５ ｉ０４
などを生成することによって、高抵抗Ｉ＠を形成する。In the above configuration, the side resistance layer (2) is provided with the nonlinear resistor (1) in order to prevent creeping discharge and increase discharge withstand capacity.
) is formed on the outer periphery of the Its composition is from the 1970s to 1980s.
As shown in Publication No. 441, ZnO-8i02
-BizO3-8bzO3-based mixture. These mixtures were fired at a temperature range of 1000°C to 1400°C, and Z
Spinel particles called nySbzOt2 and Zn25 i04
etc., to form a high resistance I@.
しかし、このようにして形成された側面高抵抗層（２）
は、厚さが不均一になったり、ピンホールを含むことが
ある。そのため、ガラス層（３）をさらに形成すること
がある。However, the side high resistance layer (2) formed in this way
may have uneven thickness or contain pinholes. Therefore, a glass layer (3) may be further formed.
ガラス層（３）は側面高抵抗層（２）と同じ機能と、側
面高抵抗層（２）のピンホールを埋めることによって、
耐環境性を向上させる役割りを担う。The glass layer (3) has the same function as the side high resistance layer (2), and by filling the pinholes in the side high resistance layer (2),
It plays a role in improving environmental resistance.
ガラス層（３）はガラスフリットとエチルセルロース、
ブチルカルピトールを含むバインダとを混合し、セロソ
ルブアセテート等の溶剤を加えて混練しペーストを作り
、これで側面高抵抗７ｍ （２１を被覆し、２００℃〜
４００℃でバインダを除去し、４００℃〜７００℃で焼
き付けて形成する。The glass layer (3) is made of glass frit and ethyl cellulose,
Mix with a binder containing butyl calpitol, add a solvent such as cellosolve acetate and knead to make a paste.
The binder is removed at 400°C, and the film is formed by baking at 400°C to 700°C.
〔発明が解決しようとする問題点３
以上のような従来の酸化亜鉛形ＭＷ器素子の製造方法は
、避重器用素子の耐環境性を向上させるために以上のよ
うに製造されるので、製造工程が増え、人手や熱エネル
ギーを多く必要としていた。[Problem to be Solved by the Invention 3 The conventional method for manufacturing zinc oxide type MW device elements as described above is manufactured as described above in order to improve the environmental resistance of the element for a shelter. This required more steps, more manpower, and more heat energy.
また、バインダ除去が不十分などのため酸素不足の状態
が生じ、ガラス焼付の工程で素子のＶ−Ｉ特性を悪化さ
せるなどの問題点があった。In addition, insufficient removal of the binder causes a state of oxygen deficiency, which causes problems such as deterioration of the VI characteristics of the device during the glass baking process.
この発明は上記のような問題点を解消するためになされ
たもので、熱エネルギーを多く必要とせずにｖ−１特性
も悪化させることなく、耐環境性の大きい素子を製造す
ることができる酸化亜鉛形避雷器素子の製造方法を得る
ことを目的とする。This invention was made in order to solve the above-mentioned problems, and it is an oxidation method that makes it possible to manufacture elements with high environmental resistance without requiring a lot of thermal energy and without deteriorating the V-1 characteristics. The purpose of this invention is to obtain a method for manufacturing a zinc type lightning arrester element.
ｃ問題点を解決するための手段〕
この発明に係る酸化亜鉛形社重器素子の製造方法は、酸
化亜鉛形避富器素子用成形体を燐酸を含む溶液に浸漬し
た後、８５０℃〜９５０℃の温度範囲で１次焼成し、側
面高抵抗層形成用材料を被覆して２次焼成を行う。Means for Solving Problem c] The method for manufacturing a zinc oxide type heavy equipment element according to the present invention includes immersing a molded body for a zinc oxide type futuristic element in a solution containing phosphoric acid, and then heating the molded body at a temperature of 850°C to 950°C. The first firing is performed in a temperature range of 0.degree. C., and the second firing is performed after coating with a material for forming a high resistance layer on the side surface.
この発明のように燐酸を含む溶液に成形体を浸漬すると
、成形体の微小な空隙に硼酸が侵入し、２次焼成により
、この燐酸と成形体が反応し成形体の表面を緻密化する
。When a molded body is immersed in a solution containing phosphoric acid as in the present invention, boric acid enters the minute voids of the molded body, and during secondary firing, the phosphoric acid reacts with the molded body to densify the surface of the molded body.
以下、この発明の一実施例について説明する。 An embodiment of the present invention will be described below.
酸化亜鉛を主成分とし、添加物としてそれぞれ０．１〜
２．０モル％の酸化ビスマス、酸化アンチモン、酸化コ
バルト、酸化マンガン、酸化クロム。The main component is zinc oxide, and each additive is 0.1~
2.0 mol% bismuth oxide, antimony oxide, cobalt oxide, manganese oxide, chromium oxide.
酸化シリコンおよび０．００１〜０．１モル％の硝酸ア
ルミニウムを選び、粉砕、混合、造粒の後、成形体を成
形した。この成形体を過飽和な燐酸（Ｈ３ＰＯ４）水溶
液に１分間浸漬し、乾燥後、９５０℃で１次焼成を行っ
た。次に側面高抵抗層形成用のＺｎＯ−８ｉＯ２−Ｂｉ
２０３−８ｂｚＯ３系混合物を付着し、１１９０℃で
２次焼成を行った。研磨、１！極付けをし、実験品Ａを
得た。Silicon oxide and 0.001 to 0.1 mol % of aluminum nitrate were selected, and after pulverization, mixing, and granulation, a molded body was formed. This molded body was immersed in a supersaturated phosphoric acid (H3PO4) aqueous solution for 1 minute, dried, and then primary fired at 950°C. Next, ZnO-8iO2-Bi for forming a side high resistance layer.
A 203-8bzO3-based mixture was applied and secondary firing was performed at 1190°C. Polishing, 1! After attaching the poles, Experimental Product A was obtained.
なお、１次焼Ｆｆｌ温度を９５０°Ｃとしたのは、２次
焼成時の側面高抵抗層と素体の割れを防ぐためである。Note that the primary firing Ffl temperature was set to 950°C in order to prevent cracking of the side high resistance layer and the element body during the secondary firing.
成形体を燐眠水＠液に浸漬せずに、他の工程は上記実験
品Ａと同様にして実験品Ｂを得た。Experimental product B was obtained in the same manner as experimental product A, except that the molded body was not immersed in phosphorescent water.
これら実験品Ａ、Ｂを１００℃の油中に放置し耐油試験
を行った。These experimental products A and B were left in oil at 100°C to perform an oil resistance test.
素子に１ｆｉＡを流すのに必要な藺、圧をＶＢｎＡとす
るとき、■１ｍＡＸ０．５なる電圧を素子に課電し、素
子を流れる電流の変化を測定して第２図を得た。When the voltage required to cause 1fiA to flow through the element is VBnA, a voltage of 1 mAX0.5 was applied to the element, and the change in the current flowing through the element was measured to obtain Figure 2.
この図かられかるように、実験品Ａは、１００℃の油中
で２００ Ｈｒ課屯しても直流の増加は認められなかっ
た。一方、実験品Ｂでは、油が素子に侵入したため（こ
れはガスクロマトグラフにより油成分を検出した）、素
子の抵抗値が下がり、電流が増加した。As can be seen from this figure, no increase in direct current was observed in experimental product A even after 200 hours of use in oil at 100°C. On the other hand, in experimental product B, oil entered the element (the oil component was detected using a gas chromatograph), so the resistance value of the element decreased and the current increased.
燐酸（Ｈ３ＰＯ４＝ ０，５ Ｐ２Ｏ５・１．５ Ｈ２
Ｏ）を加熱すると、Ｈ２Ｏが蒸発してＰｚＯｓとなり、
酸化燐となる。Phosphoric acid (H3PO4= 0.5 P2O5・1.5 H2
When O) is heated, H2O evaporates and becomes PzOs,
It becomes phosphorous oxide.
第３図は、エフ・エル・カトナクとエフ・エイ・フンメ
／ｌ／ （Ｆ＊ＬｓＫａｔｎａｃｋ ａｎｄ ＦＩＩＡ
ｅＨｕｎｍｅｌ ）が［ジャーナル オブ エレクトロ
ケミカル ソサイティ（Ｊ。Figure 3 shows F*LsKatnack and FIIA
eHunmel) [Journal of Electrochemical Society (J.
Ｆ：、ｌｅｃｔｒｏｃｈｅｍ、５ｏｃ０．） １ ｏ
５ Ｃ３１１３２（１９５８） Ｊに発表した酸化燐と
酸化亜鉛の状態図であり、第４図は、イー−エム・レヴ
インとアール・ニス・ロス（Ｅ−Ｍ・Ｌｅｖｉｎ ａｎ
ｄ Ｒ＊Ｓ＊Ｒｏｔｈ）が［ジャーナル オプ リサー
チ ナショナル ビューロー スタンダード（Ｊ 、Ｒ
ｅ５ｅａｖｃｈＮａｔ１．Ｂｕｒ、５ｆａｎｄａｒｄｓ
、） ６８Ａｒ２］２０２（１９６４＞ＪＫ全発表た酸
化燐とビスマスの状態図であり、ｂｃｃはボディ セン
タ キュービック フェーズ（ｂｏｄｙ ｃｅｎｔｅｒ
ｅｄｃｕｂｉｃ ｐｈａｓｅ） 、Ｃはキュービック（
ｃｕｂｉｃ） ＢｉｚＯａ 。F:, electrochem, 5oc0. ) 1 o
5 C31132 (1958) This is a phase diagram of phosphorous oxide and zinc oxide published in J.
d R*S*Roth) is [Journal Op Research National Bureau Standard (J, R
e5eavchNat1. Bur, 5 standards
,) 68Ar2] 202 (1964> JK fully published phase diagram of phosphorous oxide and bismuth, bcc is body center cubic phase (body center cubic phase)
edcubic phase), C is cubic (
cubic) BizOa.
ｓｓはソリッド ソリューショｙ（ｓｏｌｉｄ ５ｏｌ
ｎｔｉｏｎ）を示している。ss is solid solution
tion).
これら状態図から分かるように、酸化燐は酸化亜鉛と共
晶反応し、酸化ビスマスとも反応をする。As can be seen from these phase diagrams, phosphorus oxide undergoes a eutectic reaction with zinc oxide and also reacts with bismuth oxide.
酸化亜鉛粒子は液状の酸化ビスマスを介して液相成長す
るが、酸化燐の存在は酸化ビスマスの活動を活発化し液
相成長を促進する。又、酸化燐は酸化亜鉛とも反応し酸
化亜鉛の粒成長を促進する。Zinc oxide particles grow in a liquid phase via liquid bismuth oxide, but the presence of phosphorus oxide activates the activity of bismuth oxide and promotes liquid phase growth. In addition, phosphorus oxide also reacts with zinc oxide and promotes grain growth of zinc oxide.
よって燐酸溶液に浸漬して燐酸が浸漬した素体部では焼
結反応がより一層進み、緻密な層が形成されると考えら
れる。Therefore, it is thought that the sintering reaction progresses even further in the element body part immersed in phosphoric acid by immersing it in a phosphoric acid solution, and a dense layer is formed.
その結果、この実施例による素子の断面は第１図のよう
に示すことができる。第１図で、符号（１）。As a result, the cross section of the device according to this embodiment can be shown as shown in FIG. In FIG. 1, symbol (1).
（２） 、 （４１は第５図におけると同様な部分であ
る。（５ａ）は素体の側面側に形成された緻密な層、（
５ｂ）は素体の上、下面部に形成された緻密な層を示す
。(2), (41 is the same part as in Fig. 5. (5a) is a dense layer formed on the side surface of the element body,
5b) shows a dense layer formed on the upper and lower surfaces of the element body.
燐酸溶液に浸漬した後、２次焼成を行うと以上のような
反応により微密な層（５ａＬ（５ｂ）が形成される。こ
のため本素子は、高過油中に放置されても油の侵入をこ
の緻密な層（５ａ）、（５ｂ）によって妨げることがで
きるので、油によるＶ−Ｉ特性劣化は生じない。When secondary firing is performed after immersion in a phosphoric acid solution, a fine layer (5aL (5b)) is formed due to the above reaction.Therefore, even if this element is left in a high-purity oil, it will not absorb oil. Since penetration can be prevented by these dense layers (5a) and (5b), no deterioration of the VI characteristic due to oil occurs.
なお、上記実施例では、燐酸溶液を水を用いて炸裂した
場合について示したが、アルコールを用いて炸裂しても
よい。In the above embodiments, the phosphoric acid solution was exploded using water, but it may also be exploded using alcohol.
また、燐酸溶液に浸漬中、超音波などによる振動を素子
と溶液にかけ、燐酸の浸入を促進すると、一層効果的で
ある。Further, it is even more effective to apply vibrations such as ultrasonic waves to the element while it is immersed in the phosphoric acid solution to promote penetration of the phosphoric acid.
さらに、燐酸溶液に浸漬する代りに、溶液をスプレーで
吹きつけても効果はある。Furthermore, instead of dipping in the phosphoric acid solution, spraying the solution can also be effective.
以上のように、この発明によれば、酸化亜鉛形避富器素
子用成形体を燐酸溶液に浸漬した後、１次焼成し、側面
高抵抗層形成用材料を被覆して２次畑成したので、緻密
な層が形成され、耐環境性が向上し、Ｖ−Ｉ特性を安定
に製造でき、歩留りが高くなるという効果がある。As described above, according to the present invention, a molded body for a zinc oxide type fan escaper element is immersed in a phosphoric acid solution, and then subjected to primary firing, and then coated with a material for forming a side high resistance layer to form a secondary field. Therefore, a dense layer is formed, environmental resistance is improved, VI characteristics can be stably manufactured, and the yield is increased.
第１図〜第４図はこの発明の一実施例を説明するための
もので、第】図は製作した素子の断面図、第２図は耐油
性試験結果を示す特性紛図、第３図はＺｎ０−ＰｚＯｓ
系の状態図、第４図はＢｉｚＯｓ −Ｐ２Ｏ３系の状態
図、第５図は従来の酸化亜鉛形避麿器素子の断面図であ
る。
（１）・・酸化亜鉛形の非直線抵抗体、（２）・・側面
高抵抗層、（４）拳・電極、（５ａ）、（５ｂ）・・緻
密な層。
なお、各図中、同一符号は同−又は相当部分を示す。
１ ： 作直ｐＬ拍１し俸
２ ： イｐＩＪ面島１で（亨１「層
４ 電極
５ａ、５ｂ ： 纜牙１層
１ｅ溌虜〔イヒ、牽 （ＩＸ−＝！（≧）ｒ。
５白中掃電呵閤（Ｈｒ）
犀３図
犀４図
ＭＯＬ −Ｉｓ
手続補正書
昭和６４１０月２１日Figures 1 to 4 are for explaining one embodiment of the present invention, where Figure 1 is a cross-sectional view of the fabricated element, Figure 2 is a characteristic graph showing the oil resistance test results, and Figure 3 is a characteristic diagram showing the results of the oil resistance test. is Zn0-PzOs
FIG. 4 is a phase diagram of the BizOs-P2O3 system, and FIG. 5 is a cross-sectional view of a conventional zinc oxide type arrester element. (1)... Zinc oxide type non-linear resistor, (2)... Side high resistance layer, (4) Fist/electrode, (5a), (5b)... Dense layer. In each figure, the same reference numerals indicate the same or corresponding parts. 1: Sakunai pL beat 1 and pay 2: IpIJ Menjima 1 (亨 1 "layer 4 electrodes 5a, 5b: 纯 1 layer 1e 挌唌〔Ihi, き (IX-=!(≧)r. 5 Hakuchu Kanden Kan (Hr) Rhinoceros 3rd figure Rhinoceros 4th figure MOL-Is Procedural amendment dated October 21, 1982
Claims (3)
に浸漬した後、８５０℃〜９５０℃の温度範囲で１次焼
成し、側面高抵抗層形成用材料を被覆して２次焼成を行
う酸化亜鉛形避雷器素子の製造方法。(1) After immersing a molded body for a zinc oxide type lightning arrester element in a solution containing phosphoric acid, it is first fired in a temperature range of 850°C to 950°C, then coated with a material for forming a side high resistance layer, and then subjected to a second firing. A method for manufacturing a zinc oxide type lightning arrester element.
項記載の酸化亜鉛形避雷器素子の製造方法。(2) Claim 1 using a supersaturated phosphoric acid aqueous solution
A method for manufacturing a zinc oxide type lightning arrester element as described in .
範囲第１項記載の酸化亜鉛形避雷器素子の製造方法。(3) A method for manufacturing a zinc oxide type lightning arrester element according to claim 1, using a supersaturated phosphoric acid alcohol solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62074291A JPS63241901A (en) | 1987-03-30 | 1987-03-30 | Manufacture of zinc oxide type arrestor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62074291A JPS63241901A (en) | 1987-03-30 | 1987-03-30 | Manufacture of zinc oxide type arrestor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63241901A true JPS63241901A (en) | 1988-10-07 |
Family
ID=13542886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62074291A Pending JPS63241901A (en) | 1987-03-30 | 1987-03-30 | Manufacture of zinc oxide type arrestor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63241901A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008195567A (en) * | 2007-02-13 | 2008-08-28 | Sumitomo Metal Mining Co Ltd | Zinc oxide based sintered compact and method of manufacturing the same |
-
1987
- 1987-03-30 JP JP62074291A patent/JPS63241901A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008195567A (en) * | 2007-02-13 | 2008-08-28 | Sumitomo Metal Mining Co Ltd | Zinc oxide based sintered compact and method of manufacturing the same |
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