JPS62252105A - Manufacture of zinc oxide type arrestor element - Google Patents
Manufacture of zinc oxide type arrestor elementInfo
- Publication number
- JPS62252105A JPS62252105A JP61095617A JP9561786A JPS62252105A JP S62252105 A JPS62252105 A JP S62252105A JP 61095617 A JP61095617 A JP 61095617A JP 9561786 A JP9561786 A JP 9561786A JP S62252105 A JPS62252105 A JP S62252105A
- Authority
- JP
- Japan
- Prior art keywords
- zinc oxide
- oxide type
- boric acid
- lightning arrester
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims description 32
- 239000011787 zinc oxide Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 17
- 239000004327 boric acid Substances 0.000 claims description 15
- 238000010304 firing Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 10
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 8
- 229910052810 boron oxide Inorganic materials 0.000 description 7
- 229910000416 bismuth oxide Inorganic materials 0.000 description 5
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 5
- 230000007613 environmental effect Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000010587 phase diagram Methods 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 101100540501 Lecanicillium sp vlmA gene Proteins 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は酸化亜鉛形避雷器用素子の表面部を緻密にし
て耐環境性を向上させるための製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a manufacturing method for making the surface of a zinc oxide type lightning arrester element dense and improving its environmental resistance.
第５図は例えば、特公昭５５−４８４４１号公報に示さ
れた従来の避雷器用素子を示す断面図である。FIG. 5 is a sectional view showing a conventional lightning arrester element disclosed in, for example, Japanese Patent Publication No. 55-48441.
図において、１１１ ＃−を非直線抵抗体、（２）は側
面高抵抗Ｗ４．１３）けガラス層、（４）は電極である
。In the figure, 111 #- is a non-linear resistor, (2) is a side surface high resistance W4.13) glass layer, and (4) is an electrode.
側面抵抗ＩＩ（２）Ｈ沿面放電を防止し、放電耐量を大
きくするために、非直線抵抗体（１）の外周部に形成さ
れる。その組成は特公昭５５−４８４４１号公報に示さ
れているように、ＺｎＯ−８ｉ０２−Ｂ１２Ｏ３−３ｂ
２０３系混今物より敬る。これら混合物を１０００℃〜
１４００℃の温度範囲で焼成し、Ｚｎ７Ｓｔ＋２０１２
なるスピネル粒子やＺｎ寓５ｉ０４などを生成すること
によって、高抵抗層を形成する。Side resistor II (2)H is formed on the outer periphery of the non-linear resistor (1) in order to prevent creeping discharge and increase discharge withstand capacity. Its composition is ZnO-8i02-B12O3-3b as shown in Japanese Patent Publication No. 55-48441.
I respect it more than the 203 series. These mixtures are heated to 1000℃~
Sintered in a temperature range of 1400℃, Zn7St+2012
A high-resistance layer is formed by producing spinel particles, Zn-5i04, etc.
しかし、このようにして形成された側面高抵抗層（２）
＃″１．厚さが不均一になったり、ピンホールを含むこ
とがある。そのため、ガラス＠（３）を更に形成するこ
とかある。However, the side high resistance layer (2) formed in this way
#"1. The thickness may be uneven or contain pinholes. Therefore, glass@(3) may be further formed.
ガラス層＋３） ＃：を側面高抵抗層（２）と同じ機能
と、側面高抵抗＠ ｉ２）の穴部を埋めることによって
、耐環境性を向上させる役割りを担う。Glass layer + 3) #: has the same function as the side high resistance layer (2) and plays the role of improving environmental resistance by filling the hole in the side high resistance layer (i2).
ガラスＩＩ ＋３）１１ガラスフリツトとエチルセルロ
ース、ブチルカルピトールを含むバインダーとを混合し
、セロンルブアセテート等の溶剤を加えて混練しペース
トを作り、これで側面高抵抗Ｊｉｍ ＋２）を被覆し、
２００°Ｃ−４００’Ｃでバインダ除去除去し、４０σ
Ｃ〜７００℃で焼き付けて形成する。Glass II +3) 11 Glass frit is mixed with a binder containing ethyl cellulose and butyl calpitol, and a solvent such as selonlube acetate is added and kneaded to make a paste, which is used to cover the side surface of high resistance Jim +2).
Remove binder at 200°C-400'C, 40σ
It is formed by baking at a temperature of 700°C to 700°C.
従来の避雷器用素子は耐環境性を向上させるために以上
のように製造されるので、・禰造工程が増え、人手全熱
エネルギーを多く必要としていた。Conventional lightning arrester elements are manufactured as described above in order to improve their environmental resistance; therefore, the number of wire-forming processes increases and a large amount of total human heat energy is required.
又、バインダ除去が不十分などのため酸素不足な状態が
生じ、ガラス焼付の丁卯で素子のＶ−工時性を悪化させ
るなどの問題があった。In addition, insufficient removal of the binder causes a state of oxygen deficiency, which causes problems such as deterioration of V-workability of the element due to glass baking.
この発明は上記のような問題点を解消するためになされ
たもので、熱エネルギーを多く必要とせずにＶ−Ｉ特性
も悪化させることなく＃環境性の大きい素子を製造する
ことを目的とする。This invention was made to solve the above-mentioned problems, and its purpose is to manufacture an element with high environmental friendliness without requiring a lot of thermal energy and without deteriorating the V-I characteristics. .
この発明に係る避雷器素子製造方法は、酸化亜鉛形避雷
器素子用ｌ′ｉ２形体を硼酸を含む溶液に浸漬した後、
８５０’Ｃ〜９５０’Ｃの湿度範囲で１次焼成し、側面
高抵抗層形成用材料を被覆して２次焼成を行なうもので
ある。The method for manufacturing a lightning arrester element according to the present invention includes: immersing a l'i2 type body for a zinc oxide type lightning arrester element in a solution containing boric acid;
The first firing is performed at a humidity range of 850'C to 950'C, and the second firing is performed after coating with a material for forming a side high resistance layer.
この発明のように硼酸を含む溶液に浸漬すると成形体の
微小な空隙に硼酸か浸入し、２次焼成により、この硼酸
と素体か反応し素体の表面を緻密化することになる。When immersed in a solution containing boric acid as in the present invention, the boric acid penetrates into the minute voids of the molded body, and during the secondary firing, the boric acid reacts with the base body to densify the surface of the base body.
以下、この発明の一実権例について説明する。 Hereinafter, one practical example of this invention will be explained.
酸化亜鉛を主成分とし、添加物としてそれぞれ０．１〜
２．０モル係の酸化ビスマス、酸化アンチモン、酸化コ
バルト、酸化マンガン、酸化クロム、酸化シリコンおよ
び０ 、００１〜０．１モル係の硝酸アルミニウムを選
び、粉砕、混合、造粒、成形した。The main component is zinc oxide, and each additive is 0.1~
Bismuth oxide, antimony oxide, cobalt oxide, manganese oxide, chromium oxide, silicon oxide and aluminum nitrate of 0.001 to 0.1 molar ratio were selected and crushed, mixed, granulated and molded.
こねを過胞和な硼酸（Ｈ２ＢＯ３）水溶液に１分間浸漬
し、乾燥後、９５０℃で１次焼成を行なった。次に側面
高抵抗層形成用ノＺｎＯ−８ｉ０２−Ｂｉ２０３−Ｓｂ
２０３系ｉｇ今物？付着し、１１９０℃で２次焼成を行
なった。研磨、電極付けをし、実験品Ａを得た。The dough was immersed in a hypercellular boric acid (H2BO3) aqueous solution for 1 minute, dried, and then primary baked at 950°C. Next, ZnO-8i02-Bi203-Sb for forming a side high resistance layer
203 series ig now? It was attached and secondary firing was performed at 1190°C. Experimental product A was obtained by polishing and attaching electrodes.
なお、１次焼成？■度を９５０℃七したのは、酸化硼素
と酸化亜鉛の共晶γ晶度９６０℃よりも低くして１次焼
成時の素体の割わを防ぐためである。In addition, the first firing? (2) The reason why the temperature was set at 950°C was to lower the eutectic gamma crystallinity of boron oxide and zinc oxide to 960°C to prevent the element body from cracking during the primary firing.
成形体を硼や水溶液（こ浸漬せずに、他の工程は上記実
験品Ａと同様にして実験品Ｂを得た。Experimental item B was obtained in the same manner as experimental item A except that the molded body was not immersed in a borium or aqueous solution.
こわら実験品Ａ、Ｂを９２％相対湿度中に放置し１肘湿
試験を行なった。Stiff experimental products A and B were left in 92% relative humidity and a one-elbow humidity test was conducted.
素子に１ｍＡを流すのに必要な電圧をｖｚｍＡとする。Let vzmA be the voltage required to cause 1 mA to flow through the element.
ｘｍＡの放置時間による変化率を第２図に示す。この
図から分るように実験品へけ９２チ相対湿度中に６５０
Ｈｒ放置してもｖＩＩｎ人は低下しｆｈ。一方、実験品
Ｂの方ｎ ６５０Ｈｒ後、約２０係もｖｌｍＡが低下し
ている。これけ実験品Ｂでけ水分が素子中に浸入して素
子の抵抗を下げている（ｖｌｍＡが小さくなっている）
。Figure 2 shows the rate of change in xmA depending on the standing time. As can be seen from this figure, the experimental product was heated to 650°C in a relative humidity of 92°C.
Even if Hr is left alone, vIIn will decrease fh. On the other hand, for experimental product B, vlmA decreased by about 20 factors after 650 hours. In this experimental product B, moisture has entered the element and lowered the resistance of the element (vlmA has become smaller).
.
１００Ｉｌｃ １４０℃
硼酸を加熱すると、Ｈ３ＢＯ３→ ＨＨＯ□ →３００
℃
Ｈ２Ｂ、０７ → Ｂ２Ｏ３となり、酸化硼素となる
。酸化硼素と酸化亜鉛の状態図を第３図（Ｙｕ、Ｓ、Ｌ
ｓｏｎａｖ。100Ilc 140℃ When boric acid is heated, H3BO3→ HHO□ →300
°C H2B, 07 → B2O3 and becomes boron oxide. Figure 3 shows the phase diagram of boron oxide and zinc oxide (Yu, S, L
sonav.
Ｚｈｕｒ、 Ｎｅｏｒｇ、 ３．１２４６（１９５８）
）に酸化硼素と酸化ビスマスの状態図（Ｅ、Ｍ、Ｌｅｖ
ｉｎ ａｎｄ Ｃ１ｙｄｅ Ｍｅ Ｄａｎｉｅｌ。Zhur, Neoorg, 3.1246 (1958)
) shows the phase diagram of boron oxide and bismuth oxide (E, M, Lev
in and Clyde Me Daniel.
Ｊ、Ａｒｎ、Ｃｓｒａｍ、 Ｓｏｏ、 ４５［８１３５
６（１９６２））を第４図に示す。J, Arn, Csram, Soo, 45 [8135
6 (1962)) is shown in Figure 4.
こねら状態図から分るように酸化硼素は酸化亜鉛、酸化
ビスマスと共晶反応をする。As can be seen from the phase diagram, boron oxide undergoes a eutectic reaction with zinc oxide and bismuth oxide.
酸化亜鉛粒子は液状の酸化ビスマス？介して液相成長す
るが、酸化硼素の存在は酸化ビスマスの活動を活発化し
液相成長を促進する。又、酸化硼素は酸化亜鉛と４反応
し酸化亜鉛の粒成長分促進する。よって硼酸溶液に浸漬
して硼酸が浸６１シた素木部では焼結反応がより一層進
み、緻密な層が形成されると考えられる。Are zinc oxide particles liquid bismuth oxide? However, the presence of boron oxide activates the activity of bismuth oxide and promotes liquid phase growth. Further, boron oxide reacts with zinc oxide to promote grain growth of zinc oxide. Therefore, it is thought that the sintering reaction progresses even further in the bare wood that has been soaked in boric acid by immersing it in a boric acid solution, and a dense layer is formed.
その結果、本発明による素子の断面は第１図のように示
すことができる。第１図で、ｉｌｌ 、 ［２）、＋４
１は従来素子と同様なものである。（５Ｂ）は素体上下
面側に形成された緻密な層、（５ｂ）は素体側面部に１
に成された緻密な層を示す。As a result, the cross section of the device according to the invention can be shown as shown in FIG. In Figure 1, ill , [2), +4
1 is similar to the conventional element. (5B) is a dense layer formed on the upper and lower surfaces of the element, and (5b) is a layer formed on the side surface of the element.
It shows the dense layers formed on the surface.
硼ＬＩＩ（２溶液に浸漬した後、２次焼成を行なうと以
上のような反応により緻密な層が形成さｔｌ、る。この
ため本素子は、高湿度中に放１４きれても水分の浸入を
この緻密な層によって妨げることができるので、水分に
よるＶ−Ｉ特性劣化は生じない。When the secondary firing is performed after immersion in the LIII solution, a dense layer is formed due to the reaction described above.For this reason, even if this element is exposed to high humidity for 14 minutes, moisture will not infiltrate. This dense layer prevents the V-I characteristics from deteriorating due to moisture.
なお、上記実施例では、硼酸溶液を水を用いて作製した
場合について示したが、アルコールを用いて作製しても
よい。In addition, although the said Example showed the case where a boric acid solution was produced using water, it may be produced using alcohol.
硼酸溶液に浸漬中、超音波などによる振動を素子と溶液
にかけ、硼酸の浸入を促進すると、一層効果的である。It is even more effective to apply vibrations such as ultrasonic waves to the element and the solution during immersion in the boric acid solution to promote penetration of the boric acid.
硼酸溶液に浸漬する代りに、溶液をスプレーで吹きつけ
ても効果はある。Instead of dipping in the boric acid solution, spraying the solution can also be effective.
以上のようにこの発明によれば、酸化亜鉛形避雷器素子
用峻形体を硼酸溶液にＶ潰した後、１次焼成し、側面晶
抵抗層形成用材料を被覆して２次焼成したので、緻密な
層が形成され、耐環境性が向上し−ｖ−ｒ特性を安定に
製造でき、歩留りが高くなるという効果がある。As described above, according to the present invention, the compact body for a zinc oxide type lightning arrester element is V-crushed in a boric acid solution, first fired, coated with a material for forming a side crystal resistance layer, and second fired. layer is formed, the environmental resistance is improved, -vr characteristics can be stably manufactured, and the yield is increased.
第１図はこの発明の一実施例により製作した素子の断面
図、第２図は耐湿性試験結果を示す説明図、第３図けＺ
ｎ０−ＢｓＯａ系の状態図、第４図はＢｉ２Ｏ，−ａ２
ｏ３系の状態図、第５図は従来素子の断面図である。
１１１は酸化亜鉛形の非直線抵抗体、（２）け側面胚抵
抗層、（３）ハガラス層、＋４１（ｄ４極、（５ｇ）（
５ｂ）は緻密な層である。
なお、各図中、同一符号は同−又は相当部分を示す。Fig. 1 is a cross-sectional view of an element manufactured according to an embodiment of the present invention, Fig. 2 is an explanatory diagram showing the results of a moisture resistance test, and Fig. 3
Phase diagram of n0-BsOa system, Figure 4 shows Bi2O, -a2
The state diagram of the o3 system, FIG. 5, is a sectional view of a conventional element. 111 is a zinc oxide type non-linear resistor, (2) side embryonic resistance layer, (3) hagarasu layer, +41 (d4 pole, (5g) (
5b) is a dense layer. In each figure, the same reference numerals indicate the same or corresponding parts.
Claims (3)
に浸漬した後、８５０℃〜９５０℃の温度範囲で１次焼
成し、側面高抵抗層形成用材料を被覆して２次焼成を行
なうことを特徴とする酸化亜鉛形避雷器素子の製造方法
。(1) After immersing a molded body for a zinc oxide type lightning arrester element in a solution containing boric acid, it is first fired in a temperature range of 850°C to 950°C, then coated with a material for forming a side high resistance layer, and then subjected to a second firing. 1. A method for manufacturing a zinc oxide type lightning arrester element.
許請求の範囲第１項記載の酸化亜鉛形避雷器素子の製造
方法。(2) A method for manufacturing a zinc oxide type lightning arrester element according to claim 1, characterized in that a supersaturated aqueous boric acid solution is used.
とする特許請求の範囲第１項記載の酸化亜鉛形避雷器素
子の製造方法。(3) A method for manufacturing a zinc oxide type lightning arrester element according to claim 1, characterized in that a supersaturated boric acid alcohol solution is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61095617A JPS62252105A (en) | 1986-04-24 | 1986-04-24 | Manufacture of zinc oxide type arrestor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61095617A JPS62252105A (en) | 1986-04-24 | 1986-04-24 | Manufacture of zinc oxide type arrestor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62252105A true JPS62252105A (en) | 1987-11-02 |
| JPH0525363B2 JPH0525363B2 (en) | 1993-04-12 |
Family
ID=14142506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61095617A Granted JPS62252105A (en) | 1986-04-24 | 1986-04-24 | Manufacture of zinc oxide type arrestor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62252105A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02128401A (en) * | 1988-11-08 | 1990-05-16 | Ngk Insulators Ltd | Voltage dependent nonlinear resistor and manufacture thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53103193A (en) * | 1977-02-21 | 1978-09-08 | Sanken Electric Co Ltd | Method of manufacturing oxide voltage nonnlinear resistance body |
| JPS5823402A (en) * | 1981-08-06 | 1983-02-12 | 株式会社東芝 | Method of producing nonlinear resistor |
| JPS5879704A (en) * | 1981-11-06 | 1983-05-13 | 株式会社東芝 | Method of producing nonlinear resistor |
-
1986
- 1986-04-24 JP JP61095617A patent/JPS62252105A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53103193A (en) * | 1977-02-21 | 1978-09-08 | Sanken Electric Co Ltd | Method of manufacturing oxide voltage nonnlinear resistance body |
| JPS5823402A (en) * | 1981-08-06 | 1983-02-12 | 株式会社東芝 | Method of producing nonlinear resistor |
| JPS5879704A (en) * | 1981-11-06 | 1983-05-13 | 株式会社東芝 | Method of producing nonlinear resistor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02128401A (en) * | 1988-11-08 | 1990-05-16 | Ngk Insulators Ltd | Voltage dependent nonlinear resistor and manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0525363B2 (en) | 1993-04-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |