JPH0258804A - Manufacture of zinc oxide varistor - Google Patents
Manufacture of zinc oxide varistorInfo
- Publication number
- JPH0258804A JPH0258804A JP63210294A JP21029488A JPH0258804A JP H0258804 A JPH0258804 A JP H0258804A JP 63210294 A JP63210294 A JP 63210294A JP 21029488 A JP21029488 A JP 21029488A JP H0258804 A JPH0258804 A JP H0258804A
- Authority
- JP
- Japan
- Prior art keywords
- zinc oxide
- bismuth
- molded
- sintered
- molded body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 24
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000000843 powder Substances 0.000 claims abstract description 5
- 238000000748 compression moulding Methods 0.000 claims abstract description 3
- 239000000654 additive Substances 0.000 claims abstract 3
- 238000000034 method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 3
- 238000001354 calcination Methods 0.000 claims description 2
- 230000006835 compression Effects 0.000 claims 1
- 238000007906 compression Methods 0.000 claims 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 4
- 239000011230 binding agent Substances 0.000 abstract description 4
- 239000001856 Ethyl cellulose Substances 0.000 abstract description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 abstract description 2
- 229920001249 ethyl cellulose Polymers 0.000 abstract description 2
- 235000019325 ethyl cellulose Nutrition 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 238000002156 mixing Methods 0.000 abstract description 2
- 238000005245 sintering Methods 0.000 abstract description 2
- 238000005507 spraying Methods 0.000 abstract description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910000417 bismuth pentoxide Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 238000007750 plasma spraying Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000108 silver(I,III) oxide Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は酸化亜鉛を主成分とし、焼結体自身が電圧非直
線性を有する酸化亜鉛形バリスタの製造方法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a zinc oxide type varistor which contains zinc oxide as a main component and whose sintered body itself has voltage nonlinearity.
従来の技術
電圧非直線抵抗体は一般にバリスタと呼ばれ、電圧安定
化やサージ吸収用の素子として用いられている。BACKGROUND OF THE INVENTION A voltage nonlinear resistor is generally called a varistor, and is used as an element for voltage stabilization and surge absorption.
中でも、酸化亜鉛を主成分としてこれに少景のビスマス
、コバルト、マンガン、アンチモン、クロムなどを添加
した酸化亜鉛形バリスタは、その大きなサージ電流耐量
と優れた電圧非直線性から、近年ギャップレスアレスタ
として従来のシリコンカーバイトバリスタにとって代わ
り広く利用されている。Among these, zinc oxide type varistors, which are mainly composed of zinc oxide and to which small amounts of bismuth, cobalt, manganese, antimony, chromium, etc. are added, have recently been used as gapless arresters due to their large surge current withstand capacity and excellent voltage nonlinearity. Widely used to replace conventional silicon carbide varistors.
酸化亜鉛形バリスタをアレスタとして用いる場合、放電
耐量特性２課電寿命特性がきわめて重要な特性要素とな
る。ここで、放電耐量特性は４／１ｏμＳの衝撃電流を
６分間隔で同一方向に２回印加したピーク電流の限界値
である。また、課電寿命特性は酸化亜鉛形バリスタ素子
に定格電圧を印加して使用した場合に推定されるバリス
タ素子の寿命で、通常温度および課電率を上げる加速試
験が行われる。従来よシ、これらの特性の向上のため、
Ｂｉ２Ｏ，、５ｂ２０． 、５ｉｎ２ などからなる
ペースト状側面剤を７５０℃以上の温度で仮焼した仮焼
体側面に塗布し、焼結体側面に高抵抗層を形成する方法
が一般に実施されていた。しかし、このような反応を用
いた製造方法の場合、側面剤と仮焼体の反応を均一に行
うことが難しく、その結果、放電耐量特性、外観などに
課題があった０さらに、仮焼工程が必要なため、時間的
、エネルギー的ロスが大きいという課題も同時に有して
いた０近年、非反応系で焼結体側面に高抵抗層を形成す
るため、。When a zinc oxide type varistor is used as an arrester, discharge withstand characteristics 2 and charging life characteristics are extremely important characteristic elements. Here, the discharge withstand characteristic is the limit value of the peak current when an impact current of 4/1 μS is applied twice in the same direction at an interval of 6 minutes. Furthermore, the electrification life characteristic is the life of the varistor element estimated when the rated voltage is applied to the zinc oxide varistor element, and an accelerated test is normally performed at elevated temperature and energization rate. Conventionally, in order to improve these characteristics,
Bi2O, 5b20. , 5in2 or the like is applied to the side surface of a calcined body calcined at a temperature of 750° C. or higher to form a high-resistance layer on the side surface of the sintered body. However, in the case of a manufacturing method using such a reaction, it is difficult to uniformly react the side material and the calcined body, resulting in problems with discharge resistance characteristics, appearance, etc.0 Furthermore, the calcining process In recent years, high resistance layers have been formed on the sides of sintered bodies using non-reactive systems.
焼結体にＡｇ２Ｏ，などの微粉末をプラズマ溶射により
溶着させたり、ポリイミドなどの樹脂や結晶化ガラスな
どをコーティングする試みがなされている。Attempts have been made to weld fine powder such as Ag2O to the sintered body by plasma spraying, or to coat the sintered body with a resin such as polyimide or crystallized glass.
発明が解決しようとする課題
しかしながら、以上のように焼結体側面に高抵抗層を非
反応系で形成した場合、電圧非直線性が低く、課電寿命
特性が悪いという課題を有していた。Problems to be Solved by the Invention However, when a high-resistance layer is formed on the side surface of a sintered body using a non-reactive system as described above, there are problems in that voltage nonlinearity is low and energized life characteristics are poor. .
課題を解決するだめの手段
本発明では上記従来の課題を解決するため、成形体ある
いは仮焼体の側面にビスマスをＢｉ２Ｏ，の形に換算し
て０．１〜５０ Ｍｌ ／ ｃｏ？塗布し、焼結するこ
とを特徴としている。Means for Solving the Problems In the present invention, in order to solve the above-mentioned conventional problems, bismuth is added to the side surface of the molded body or calcined body in the form of Bi2O, in an amount of 0.1 to 50 Ml/co? It is characterized by being coated and sintered.
作用
本発明の酸化亜鉛形バリスタの製造方法によれば、素子
側面からビスマスが拡散するため、電圧非直線性が向上
し、課電寿命特性の優れた酸化亜鉛形バリスタを得るこ
とができる。Function: According to the method for manufacturing a zinc oxide varistor of the present invention, since bismuth diffuses from the side surface of the element, voltage nonlinearity is improved and a zinc oxide varistor with excellent energized life characteristics can be obtained.
実施例
以下、本発明の製造方法およびそれによシ得られた酸化
亜鉛形バリスタについて実施例に基づき詳細に説明する
。EXAMPLES Hereinafter, the manufacturing method of the present invention and the zinc oxide type varistor obtained thereby will be explained in detail based on examples.
まず、酸化亜鉛の粉末に合計量に対して酸化ビスマス０
．５モル％、酸化アンチモン１．０モル％。First, add 0 bismuth oxide to the total amount of zinc oxide powder.
．． 5 mol%, antimony oxide 1.0 mol%.
酸化コバル）０．５モル％、酸化マンガン０．５モル％
、酸化クロム０．５モル％、酸化ケイ素０．５モル％、
酸化ニッケル０．５モル％を添加し、水とバインダーを
加え、ボールミルにて充分に混合し、乾燥・造粒した原
料粉を直径４０霧、厚さ３０２１１１１の大きさに圧縮
成形し、成形体を得た０そして、ビスマスペーストハエ
チルセルロース１０重ｉ％。cobal oxide) 0.5 mol%, manganese oxide 0.5 mol%
, chromium oxide 0.5 mol%, silicon oxide 0.5 mol%,
Add 0.5 mol% of nickel oxide, add water and a binder, thoroughly mix in a ball mill, dry and granulate the raw material powder. Compression molding to a size of 40 mm diameter and 3021111 mm thick to form a molded product. 0 and bismuth paste ethylcellulose 10% by weight was obtained.
酢酸ｎブチル２ｏ重量％、ブチルカルピトール７０重量
％からなる有機バインダー１ｏ００ｆＶＣＢｉ２０５を
３ｏｏｆ混合して作成した。このビスマスペーストに上
記成形体をデイツプすることにより、所定量塗布した。It was prepared by mixing 300% of an organic binder consisting of 20% by weight of n-butyl acetate and 70% by weight of butyl calpitol. A predetermined amount of the molded article was applied by dipping the bismuth paste into the bismuth paste.
ここで、塗布重量のコントロールは、ビスマスペースト
に酢酸ｎブテルヲ添加し粘度を調整した。また、塗布量
はビスマスペーストを塗布、乾燥後、重量差を測定し、
単位面積当りのＢｉ２Ｏ，塗布量に換算した。このよう
にして得た成形体を空気中にて１２００℃で焼結させ、
焼結体を得た。次いで、この焼結体を４５０℃〜７００
℃の温度範囲で熱処理し、側面にム１２０５をプラズマ
溶射した後、両端面を研磨しアルミニウムの溶射電極を
設は試料とした。Here, the coating weight was controlled by adding n-butyl acetate to the bismuth paste to adjust the viscosity. In addition, the amount of application was determined by applying bismuth paste and measuring the weight difference after drying.
It was converted into Bi2O coating amount per unit area. The molded body thus obtained was sintered at 1200°C in air,
A sintered body was obtained. Next, this sintered body was heated to 450°C to 700°C.
After heat treatment in a temperature range of 120° C. and plasma spraying of aluminum 1205 on the side surfaces, both end surfaces were polished and aluminum sprayed electrodes were installed to prepare a sample.
第１図はこのようにして得られた酸化亜鉛形バリスタの
断面図であシ、１は酸化亜鉛を主成分とする焼結体、２
はビスマスの拡散層、３はＡｌ２Ｏ５プラズマ溶射によ
る側面高抵抗層、４はアルミニウムの溶射電極である。Figure 1 is a cross-sectional view of the zinc oxide type varistor obtained in this way, where 1 is a sintered body mainly composed of zinc oxide, 2
3 is a bismuth diffusion layer, 3 is a side high resistance layer formed by Al2O5 plasma spraying, and 4 is an aluminum sprayed electrode.
第２図に本発明の製造方法による酸化亜鉛形バリスタの
Ｖ、ｌｎＡ／ｒｒａｔ （単位厚み当りのバリスタ電圧
）および電圧非直線性（ｖ５，１ｌｌＡ／ｖ、。□人）
ヲ示す。ここで、試料数は各１０個である。第２図に示
すように、ｖ、ＩｎＡ／ｆｆａはビスマスペーストラ塗
布してもほとんど変化しないのに対し、電圧非直線性は
単位表面積当り０．１〜６０〜／Ｃ己のビスマスを塗布
し、焼結した場合、著しく向上していることがわかる。Figure 2 shows the V, lnA/rrat (varistor voltage per unit thickness) and voltage nonlinearity (v5, 1llA/v, □ person) of the zinc oxide type varistor manufactured by the manufacturing method of the present invention.
I'll show you. Here, the number of samples is 10 each. As shown in Figure 2, v, InA/ffa hardly changes even when bismuth paste is applied, whereas voltage nonlinearity changes when bismuth is applied at 0.1 to 60/C per unit surface area. , it can be seen that there is a significant improvement when sintered.
次に、この試料の課電寿命特性について評価した。この
結果を第３図に示す。ここで、試験条件は、周囲温度１
３０℃１課電率９６％（ム０．ピーク値）で行い、漏れ
電流が２．６ｍ人に至るまでの時間を測定した。第３図
より、 Ｂｉ、、Ｏ。Next, the charging life characteristics of this sample were evaluated. The results are shown in FIG. Here, the test conditions are ambient temperature 1
The test was carried out at 30° C. at a charging rate of 96% (mu 0. peak value), and the time required for the leakage current to reach 2.6 m was measured. From Figure 3, Bi,,O.
塗布量が０．１〜５０ ＃ ／ ＣＯ！の範囲で課電寿
命特性が向上していることがわかる。第４図に螢光Ｘ線
分析装置にてビスマスペーストを１０Ｗ／ａｄ塗布した
試料および無処理の試料について、焼結体表面から中心
方向にあ・けてのＢｉの濃度分布を測定した結果を示す
０この結果から、本発明において電圧非直線性および課
電寿命特性が向上した原因は、ビスマスを素子周辺部か
ら拡散したためであると考えられる。Application amount is 0.1~50 #/CO! It can be seen that the charging life characteristics are improved within the range of . Figure 4 shows the results of measuring the Bi concentration distribution from the surface of the sintered body toward the center for samples coated with bismuth paste at 10 W/ad and untreated samples using a fluorescent X-ray analyzer. From these results, it is considered that the reason why the voltage nonlinearity and the charged life characteristics were improved in the present invention is that bismuth was diffused from the periphery of the element.
なお、本実施例においては成形体にビスマスを塗布した
場合についてのみ記載したが、成形体を適当な温度範囲
（７６０℃〜１１ｏｏ℃）で仮焼し、その仮焼体にビス
マスを塗布した場合についても全く同様の効果が得られ
ることを確認した０マタ、ビスマスは有機バインダーと
ともにペースト状態でデイツプ法により塗布を行ったが
、素子側面に所定量塗布が可能な他の方法、例えばノ・
ケ塗す、ローラー転写、印刷、スプレーなど、いずれの
方法であっても本発明の効果に変わシはない。In this example, only the case where bismuth was applied to the molded body was described, but the case where the molded body was calcined at an appropriate temperature range (760°C to 110°C) and bismuth was applied to the calcined body It was confirmed that exactly the same effect could be obtained with Bismuth and Bismuth, which was applied in a paste state together with an organic binder by the dip method, but other methods that allow application of a predetermined amount to the side of the element, such as No.
No matter which method is used, such as coating, roller transfer, printing, or spraying, the effects of the present invention will remain the same.
発明の効果
以上のように本発明によれば、酸化亜鉛形バリスタ素子
の成形体あるいは仮焼体の側面にビスマスを塗布した後
、焼結させることにより、電圧非直線性および課電寿命
特性の優れた酸化亜鉛形バリスタを製造することができ
るＱEffects of the Invention As described above, according to the present invention, by applying bismuth to the side surface of a molded or calcined body of a zinc oxide type varistor element and then sintering it, voltage nonlinearity and energized life characteristics can be improved. Q: Can produce excellent zinc oxide type varistors
第１図は本発明の製造方法によシ得られた酸化亜鉛形バ
リスタの断面図、第２図は本発明の製造方法による酸化
亜鉛形バリスタのｖＩｍＡ／Ｗｒ！ｎおよび電圧非直線
性の特性を示す図、第３図は同じく課電寿命特性を示す
図、第４図は本発明の実施例および従来例による酸化亜
鉛形バリスタの焼結体表面からのＢｉの濃度分布を示す
図である。
１・・・・・・焼結体、２・・・・・・拡散層、３・・
・・・・側面高抵抗層、４・・・・・・電極。
代理人の氏名 弁理士 粟 野 重 孝 ほか１名第１
図
Ｉ−ｍ−焼結体
２−位歓層
３−側面ｌ＆低抗層
！−ｔｇ１１
第３図
ＢｉｚＯｓ ＊％Ｉ（ｍｙ／ｃｍｚ）
２ 図
第４図
−＋ ＢｉｚＯｓ ＊ １％ ｔ （ｍｙ／ｃｍ’
）→表面カーらの距Ｊ１ （＋ｎ＋）FIG. 1 is a sectional view of a zinc oxide type varistor obtained by the manufacturing method of the present invention, and FIG. 2 is a cross-sectional view of the zinc oxide type varistor obtained by the manufacturing method of the present invention. FIG. 3 is a diagram showing the voltage nonlinearity characteristics, and FIG. 4 is a diagram showing the energized life characteristics. FIG. FIG. 1... Sintered body, 2... Diffusion layer, 3...
... Side high resistance layer, 4... Electrode. Name of agent: Patent attorney Shigetaka Awano and 1 other person 1st
Figure I-m-Sintered body 2-Rank layer 3-Side surface l & low resistance layer! -tg11 Fig. 3 BizOs *%I (my/cmz) 2 Fig. 4 -+ BizOs * 1% t (my/cm'
) → Distance between surface curls J1 (+n+)
Claims (2)
性を示すよう添加物を加えた原料粉を圧縮成形し、得ら
れた成形体の側面にビスマスをＢｉ＿２Ｏ＿５の形に換
算して０．１ｍｇ〜５０ｍｇ／ｃｍ＾２塗布した後、焼
結したことを特徴とする酸化亜鉛形バリスタの製造方法
。(1) Raw material powder containing zinc oxide as the main component and additives added so that the sintered body itself exhibits voltage nonlinearity is compression molded, and bismuth (converted to Bi_2O_5) is placed on the side of the resulting molded body. A method for manufacturing a zinc oxide type varistor, characterized in that the zinc oxide type varistor is coated with 0.1 mg to 50 mg/cm^2 and then sintered.
性を示すよう添加物を加えた原料粉を圧縮成形し、得ら
れた成形体を仮焼し、この仮焼体の側面にビスマスをＢ
ｉ＿２Ｏ＿５の形に換算して０．１〜５０ｍｇ／ｃｍ＾
２塗布した後、焼結したことを特徴とする酸化亜鉛形バ
リスタの製造方法。(2) Compression molding of raw material powder containing zinc oxide as the main component and additives added so that the sintered body itself exhibits voltage nonlinearity, calcining the obtained molded body, and side surfaces of this calcined body Add bismuth to B
0.1 to 50 mg/cm^ in terms of i_2O_5
2. A method for producing a zinc oxide type varistor, characterized in that the zinc oxide type varistor is sintered after coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63210294A JPH0258804A (en) | 1988-08-24 | 1988-08-24 | Manufacture of zinc oxide varistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63210294A JPH0258804A (en) | 1988-08-24 | 1988-08-24 | Manufacture of zinc oxide varistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0258804A true JPH0258804A (en) | 1990-02-28 |
Family
ID=16587016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63210294A Pending JPH0258804A (en) | 1988-08-24 | 1988-08-24 | Manufacture of zinc oxide varistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0258804A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014072207A (en) * | 2012-09-27 | 2014-04-21 | Mitsubishi Electric Corp | Method for manufacturing voltage nonlinear resistor, and voltage nonlinear resistor |
-
1988
- 1988-08-24 JP JP63210294A patent/JPH0258804A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014072207A (en) * | 2012-09-27 | 2014-04-21 | Mitsubishi Electric Corp | Method for manufacturing voltage nonlinear resistor, and voltage nonlinear resistor |
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