JPS63241822A - Manufacture of superconducting thin film - Google Patents
Manufacture of superconducting thin filmInfo
- Publication number
- JPS63241822A JPS63241822A JP62075582A JP7558287A JPS63241822A JP S63241822 A JPS63241822 A JP S63241822A JP 62075582 A JP62075582 A JP 62075582A JP 7558287 A JP7558287 A JP 7558287A JP S63241822 A JPS63241822 A JP S63241822A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- target
- substrate
- thin film
- superconducting thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 239000010949 copper Substances 0.000 claims abstract description 15
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 15
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- 230000007935 neutral effect Effects 0.000 claims abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 11
- 229910001882 dioxygen Inorganic materials 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 abstract description 9
- 239000000843 powder Substances 0.000 abstract description 5
- 229910052594 sapphire Inorganic materials 0.000 abstract description 5
- 239000010980 sapphire Substances 0.000 abstract description 5
- 239000007788 liquid Substances 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000005751 Copper oxide Substances 0.000 description 4
- 229910000431 copper oxide Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は超電導薄膜の製造方法、特に基板の表面にＩ
Ｉａ族−ＩＩａ族−銅・酸化物からなる超電導薄膜を形
成する方法に関する。Detailed Description of the Invention (Field of Industrial Application) This invention relates to a method for manufacturing a superconducting thin film, and in particular, to
The present invention relates to a method for forming a superconducting thin film made of a group Ia-group IIa-copper oxide.
（背景となる技術）
超電導材料の応用分野として、たとえばジョセフソン素
子や５ＱＵＩＤセンサーなど各覆クライオエレクトロニ
クスデバイスにきわめて有望である。(Background technology) As an application field of superconducting materials, for example, various covered cryoelectronic devices such as Josephson elements and 5QUID sensors are extremely promising.
（背景となる技術の問題点）
ところが、従来の超電導材料は、焼結により酸化物セラ
ミックスを製作しており、その薄膜化が困難であった。(Problems with the background technology) However, conventional superconducting materials have been made into oxide ceramics by sintering, and it has been difficult to make them thin.
この発明は上述の事柄に鑑み、基板の表面に超電導薄膜
を形成することを目的とする。In view of the above-mentioned problems, the present invention aims to form a superconducting thin film on the surface of a substrate.
（問題点を解決するための手段）
この発明はＩＩａ族金属または／およびその酸化物と、
ｌｅａ族金属または／およびその酸化物と、銅または／
およびその酸化物とからなるターゲットを、イオンビー
ムまたはニュートラルビームによりスパッタリングし、
このときターゲットから発せられるスパッタ粒子を、酸
素ガスを含む雰囲気中で基板上に堆積させることによっ
て、超電導薄膜を形成することを特徴とする。(Means for Solving the Problems) This invention provides a group IIa metal or/and its oxide,
lea group metal or/and its oxide and copper or/
and its oxide by sputtering with an ion beam or neutral beam,
The method is characterized in that a superconducting thin film is formed by depositing sputtered particles emitted from a target on a substrate in an atmosphere containing oxygen gas.
（作 用）
イオンビームまたはニュートラルビームを前記ターゲッ
トに照射すると、ターゲット表面の構造原子、分子と弾
性衝突する。その結果ターゲット表面の原子、分子がス
パッタされ、そのスパッタ粒子が酸素ガスを含む雰囲気
で基板上に堆積され、基板の表面にＩＩａ族−１ａ族−
銅・酸化物からなる超電導薄膜が形成される。(Function) When the target is irradiated with an ion beam or a neutral beam, it elastically collides with structural atoms and molecules on the target surface. As a result, atoms and molecules on the target surface are sputtered, and the sputtered particles are deposited on the substrate in an atmosphere containing oxygen gas, and are deposited on the surface of the substrate.
A superconducting thin film made of copper and oxide is formed.
（実施例） この発明の一実施例を以下図によって説明する。(Example) An embodiment of this invention will be described below with reference to the drawings.
第１図はこの発明に使用するのに適したニュートラルビ
ームスバッタ装置を示す。１はイオン生成室で、その内
部に熱陰極２、陽極６およびＡｒなどの不活性ガスの導
入口４を、また外部に磁界発生用のコイル５を備えてい
る。FIG. 1 shows a neutral beam scattering apparatus suitable for use with the present invention. Reference numeral 1 denotes an ion generation chamber, which is equipped with a hot cathode 2, an anode 6, and an inlet 4 for inert gas such as Ar inside, and a coil 5 for generating a magnetic field outside.
６はイオン生成室１で生成されたイオンを引出す引出電
極系、７はスパッタ室で、内部に引出電極系６により引
出されたイオンビームを中性化するたとえばタンタル、
タングステンなどからなる中性化フィラメント８と、こ
の中性化されたニュートラルビームによりスパッタされ
るターゲット９と、スパッタされることによるターゲッ
ト９から発せられるスパッタ粒子が、表面に堆積される
たとえばジルコニア、サファイヤなどの基板１０と、前
記堆積が酸素ガス雰囲中で施こすために酸素ガスを基板
１０に吹きつける酸素ガス導入口１１とを備えている。Reference numeral 6 denotes an extraction electrode system for extracting ions generated in the ion generation chamber 1, and 7 a sputtering chamber.
A neutralized filament 8 made of tungsten or the like, a target 9 sputtered by this neutralized neutral beam, and sputtered particles emitted from the target 9 by sputtering are deposited on the surface of a material such as zirconia or sapphire. The substrate 10 is provided with an oxygen gas inlet 11 through which oxygen gas is blown onto the substrate 10 so that the deposition is carried out in an oxygen gas atmosphere.
１２は基板ホルダ、１６は必要に応じて設けられる基板
１０を加熱するためのヒーター、１４は真空ポンプであ
る。12 is a substrate holder, 16 is a heater for heating the substrate 10 provided as necessary, and 14 is a vacuum pump.
前記ターゲット９としては、Ｉｔ［ａ族金属または／お
よびその酸化物と、ＩＩａ族金属または／およびその酸
化物と、銅または／その酸化物とからなり、これらの粉
末を所望のモル比で混合し、１０００〜１２００℃で仮
焼して単一のターゲットを形成しても、あるいはＩＩａ
族金属または／およびその酸化物と、ＩＩａ族金属また
は／およびその酸化物との粉末を所望のモル比で混合し
、前述と同様、高温で仮焼して角片チップを作り、この
角片チップを銅または／およびその酸化物からなる板の
上に所望面積比となるように複数個配設した複合のター
ゲットを形成してもよい。また、第２図に示すように、
銅または／およびその酸化物からなる板９１の上に、ｌ
ＩＩａ族金属または／およびその酸化物からなるチップ
９２と、Ｉａ族金属または／およびその酸化物からなる
チップ９６とを、所望面積比となるように複数個配設し
た複合のターゲットを形成してもよい。The target 9 is made of It[a group metal or/and its oxide, IIa group metal or/and its oxide, and copper or/its oxide, and these powders are mixed in a desired molar ratio. However, even if it is calcined at 1000-1200℃ to form a single target, or IIa
Powders of a group metal or/and its oxide and a group IIa metal or/and its oxide are mixed in a desired molar ratio, and calcined at high temperature in the same manner as described above to make a square chip. A composite target may be formed in which a plurality of chips are arranged in a desired area ratio on a plate made of copper or/and its oxide. Also, as shown in Figure 2,
On a plate 91 made of copper or/and its oxide,
A composite target is formed by arranging a plurality of chips 92 made of a group IIa metal or/and its oxide and a plurality of chips 96 made of a group Ia metal or/and its oxide so as to have a desired area ratio. Good too.
イオン生成室１から引出電極系６によって引出された５
００〜２０００ｅＶ程度のエネルギーをもったイオンビ
ームは、スパッタ室７において中性化フィラメント８か
らの電子によって中性化され、ニュートラルビームとな
り、Ｉａ族金属または／およびその酸化物と、ＩＩａ族
金属または／およびその酸化物と、銅またはその酸化物
とからなるターゲット９をスパッタする。このスパッタ
によりターゲット９から発せられるスパッタ粒子は、酸
素ガス導入口−から反応ガスとして導入された酸素ガス
を含む雰囲気中にある基板１０上に堆積され、基板１０
の表面に［ａ−［ａ−銅・酸化物からなる超電導薄膜が
形成される。5 extracted from the ion generation chamber 1 by the extraction electrode system 6
The ion beam with an energy of about 00 to 2000 eV is neutralized by electrons from the neutralized filament 8 in the sputtering chamber 7 to become a neutral beam, and the ion beam is made of a group Ia metal or/and its oxide and a group IIa metal or / and its oxide, and a target 9 made of copper or its oxide is sputtered. Sputtered particles emitted from the target 9 by this sputtering are deposited on the substrate 10 which is in an atmosphere containing oxygen gas introduced as a reactive gas from the oxygen gas inlet.
A superconducting thin film made of [a-[a-copper oxide] is formed on the surface of the [a-[a-copper oxide].
なお、酸素ガスを含む雰囲気とするのは、ターゲット９
が酸化物であってもニュートラルビームの照射により酸
素が分解、散逸し、基板１０上に所定の１ａ−１ａ−銅
・酸化物からなる薄膜が形成されなくなるのを防止する
ためであり、その酸素ガス分圧は５ｘ１０−’〜１ ｘ
１０−６Ｔｏｒｒ程度である。Note that the atmosphere containing oxygen gas is the target 9.
This is to prevent oxygen from being decomposed and dissipated by neutral beam irradiation even if it is an oxide, and from forming a predetermined 1a-1a-copper/oxide thin film on the substrate 10. Gas partial pressure is 5x10-'~1x
It is about 10-6 Torr.
また、イオンビームを中性化するのは、ターゲット９が
酸化物から形成されている場合、イオンビームの照射に
よって酸化物からなるターゲット９がチャージアップし
、これが破損したり、基板１０との間などで絶縁破壊が
生じるのを防ぐためであり、必ずしも完全に中性化する
必要はない。In addition, neutralizing the ion beam is done because if the target 9 is made of an oxide, the target 9 made of the oxide may be charged up by irradiation with the ion beam, and this may be damaged or there may be a gap between the target 9 and the substrate 10. This is to prevent dielectric breakdown from occurring due to such reasons, and it is not necessarily necessary to completely neutralize.
また、このことから明らかなように、ターゲット９がＩ
Ｉａ金金属、ＩＩａ金金属、銅とからなる場合には、イ
オンビームを特別に中性化する必要はない。Also, as is clear from this, target 9 is
When the ion beam is made of Ia gold metal, IIa gold metal, and copper, there is no need to specifically neutralize the ion beam.
次に本発明者が行なった成膜実験について説明する。Next, a film forming experiment conducted by the present inventor will be explained.
（成膜実験その１）
ターゲット９としテＹ２０ｓ ： ＢａＯ： ＣｕＯの
粉末をモル比で３：６：４に混合し、これを１０００°
Ｃの電気炉で２時間仮焼したものを使用し、基板１０と
してサファイヤを使用した。そして基板１０を７００°
Ｃに加熱するとともに基板ホルダー１２を回転させ、Ａ
ｒ＋イオンビームを用い、そのビームエネルギーをＩＫ
ｅＶ、５０ｍＡ１中性化フィラメント８への供給電圧を
５ＶＳＱ流を５Ａとし、またスパッタ室７内のＡｒガス
圧を１ｘ１０− Ｔｏｒｒとし、このときの酸素ガス
分圧を０．５〜５ｘ１０−” Ｔｏｒｒの範囲として成
膜実験を行なった。(Film forming experiment 1) Target 9 was mixed with powders of TE Y20s: BaO: CuO in a molar ratio of 3:6:4, and heated at 1000°.
The substrate 10 was calcined for 2 hours in an electric furnace of C, and sapphire was used as the substrate 10. and the substrate 10 at 700°
The substrate holder 12 is heated to A and the substrate holder 12 is rotated.
Using an r+ ion beam, the beam energy is IK
eV, 50mA, the supply voltage to the neutralized filament 8 was set to 5A with a 5VSQ flow, and the Ar gas pressure in the sputtering chamber 7 was set to 1x10- Torr, and the oxygen gas partial pressure at this time was 0.5 to 5x10-'' Torr. Film deposition experiments were conducted within the range of .
これによってサファイヤ基板１００表面に、厚さ１μｍ
のＹ −Ｂａ −Ｃｕ酸化物からなる超電導薄膜を形成
した。この超電導薄膜に金電極をスパッタ成膜により形
成し、前記超電導薄膜の電気抵抗を液体窒素中で測定し
たところ０であった。As a result, a thickness of 1 μm is formed on the surface of the sapphire substrate 100.
A superconducting thin film made of Y-Ba-Cu oxide was formed. A gold electrode was formed on this superconducting thin film by sputtering, and the electrical resistance of the superconducting thin film was measured in liquid nitrogen and found to be 0.
（成膜実験その２）
ターゲット９としてＹ２Ｏ３： ＢａＯの粉末をモル比
で１：２に混合し、これを１０００°Ｃの電気炉で２時
間仮焼した後、これを４×６ＮＭ角片チップにし、これ
ら角片チップを銅板上に面積比で６０％になるよう１こ
並べたものを使用し、基板１０としてジルコニアを使用
した。そして基板１０を７００°Ｃに加熱するとともに
基板ホルダー１２を回転させ、Ａｒ”イオンビームを用
い、そのビームエネルギーを１ＫｅＶ、 ５０ ｍＡ
、中性化フィラメント８への供給電圧をＳＶ、ａ流を５
Ａとし、また、スパッタ室７内のＡｒガス圧を１ ｘ
１０−４Ｔｏｒｒとし、このときの酸素ガス分圧を０．
５〜２ｘ １０−４Ｔｏｒｒの範囲として成膜実験を行
なった。(Film forming experiment part 2) As the target 9, Y2O3: BaO powder was mixed at a molar ratio of 1:2, and after calcining this in an electric furnace at 1000°C for 2 hours, it was formed into a 4×6 NM square chip. These square chips were arranged one by one on a copper plate so that the area ratio was 60%, and zirconia was used as the substrate 10. Then, the substrate 10 is heated to 700°C, the substrate holder 12 is rotated, and an Ar'' ion beam is used, the beam energy being 1 KeV and 50 mA.
, the supply voltage to the neutralized filament 8 is SV, the a current is 5
A, and the Ar gas pressure in the sputtering chamber 7 is 1 x
10-4 Torr, and the oxygen gas partial pressure at this time was 0.
Film formation experiments were conducted in the range of 5 to 2 x 10-4 Torr.
これによってジルコニア基板１０の表面に、厚さ１μｍ
のＹ −Ｂａ −Ｃｕ酸化物からなる超電導膜を形成し
た。この超電導薄膜に金電極をスパッタ成膜により形成
し、前記超電導薄膜の電気抵抗を液体窒素中で測定した
ところ０であった。As a result, a thickness of 1 μm is formed on the surface of the zirconia substrate 10.
A superconducting film made of Y-Ba-Cu oxide was formed. A gold electrode was formed on this superconducting thin film by sputtering, and the electrical resistance of the superconducting thin film was measured in liquid nitrogen and found to be 0.
なお、前記した実験は、基板１０を加熱しながら、スパ
ッタ粒子を堆積するようにして成膜を行なったが、堆積
中は加熱しないで成膜後、必要に応じてアニーリング処
理を施こすようにしてもよいのは勿論である。Note that in the above experiment, film formation was performed by depositing sputtered particles while heating the substrate 10, but it was preferable not to heat the substrate 10 during deposition, but to perform an annealing treatment as necessary after film formation. Of course, you can.
また、イオンビームのイオン種としてＡｒ＋を使用した
が、これ以外のイオン種として、Ｋｒ、Ｘｅなどを使用
してもよい。Furthermore, although Ar+ was used as the ion species of the ion beam, other ion species such as Kr, Xe, etc. may also be used.
（発明の効果）
以上詳述したようにこの発明によれば、１ａ−ｄａ−銅
・酸化物からなる超電導薄膜の生成が可能となるといっ
た効果を奏する。(Effects of the Invention) As detailed above, according to the present invention, it is possible to produce a superconducting thin film made of 1a-da-copper oxide.
なお、この発明は前述した実施例、実験例に限んれるこ
となく、その精神および範囲を逸脱しない範囲で種々の
変形例が考えられ、たとえば基板／σ
孕として線状のものを用い、これにＩＩａ−［ａ−銅・
酸化物をこの発明にしたがって被覆してもよいのは勿論
である。これによれば、これをコイルとして使用すれば
超電導コイルを得ることができる。Note that this invention is not limited to the embodiments and experimental examples described above, and various modifications can be made without departing from the spirit and scope of the invention. For example, a linear substrate may be used as the substrate/σ, IIa-[a-copper・
Of course, oxides may also be coated according to the invention. According to this, if this is used as a coil, a superconducting coil can be obtained.
第１図はこの発明の実施にあたって使用するニュートラ
ルビームスバッタ装置の一例を示す一部断面概略図であ
る。第２図は第１図のニュートラルビームスバッタ装置
に用いるターゲットの一例を示す図である。
１：イオン生成室、７：スパッタ室、９：ターゲット、
１０：基板、FIG. 1 is a schematic partial cross-sectional view showing an example of a neutral beam scattering device used in carrying out the present invention. FIG. 2 is a diagram showing an example of a target used in the neutral beam scattering device shown in FIG. 1. 1: ion generation chamber, 7: sputtering chamber, 9: target,
10: Substrate,
Claims (1)
または／およびその酸化物と、銅または／およびその酸
化物とからなるターゲットを、イオンビームまたはニュ
ートラルビームによりスパッタリングし、このとき前記
ターゲットから発せられるスパッタ粒子を、酸素ガスを
含む雰囲気中で基板上に堆積させることによつて、その
基板の表面に薄膜を形成してなることを特徴とする超電
導薄膜の製造方法。A target consisting of a group IIIa metal or/and its oxide, a group IIa metal or/and its oxide, and copper or/and its oxide is sputtered using an ion beam or a neutral beam, and at this time, the target is sputtered with an ion beam or a neutral beam. 1. A method for producing a superconducting thin film, comprising depositing sputtered particles on the substrate in an atmosphere containing oxygen gas to form a thin film on the surface of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62075582A JPS63241822A (en) | 1987-03-27 | 1987-03-27 | Manufacture of superconducting thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62075582A JPS63241822A (en) | 1987-03-27 | 1987-03-27 | Manufacture of superconducting thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63241822A true JPS63241822A (en) | 1988-10-07 |
Family
ID=13580327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62075582A Pending JPS63241822A (en) | 1987-03-27 | 1987-03-27 | Manufacture of superconducting thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63241822A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63247363A (en) * | 1987-04-03 | 1988-10-14 | Matsushita Electric Ind Co Ltd | Sputtering target |
| JPH01183495A (en) * | 1988-01-14 | 1989-07-21 | Nec Corp | Production of single crystal oxide superconducting thin film |
-
1987
- 1987-03-27 JP JP62075582A patent/JPS63241822A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63247363A (en) * | 1987-04-03 | 1988-10-14 | Matsushita Electric Ind Co Ltd | Sputtering target |
| JPH01183495A (en) * | 1988-01-14 | 1989-07-21 | Nec Corp | Production of single crystal oxide superconducting thin film |
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