JPS6324057A - Dry plating device - Google Patents

Abstract

PURPOSE:To form a vapor-deposited film having uniform quality and thickness by blowing a gas onto a material to be treated from a couple of nozzles at a specified angle to the vapor deposition stream from a vapor deposition source when the vapor-deposited film of a metal, etc., is formed on the surface of the material to be treated by dry plating. CONSTITUTION:The fine particles 3 of a vaporizing material from a vaporization source 1 contg. the vaporizing material 2 of Al, Ti, etc., are deposited on the surface of the material 8 to be treated such as metallic sheet in a vacuum treating chamber 10 by dry plating such as vacuum deposition, sputtering, and ion plating to form a vapor-deposited film 9. In this case, a couple of blowoff devices 4 and 4 to blow gases at an intersection angle of <=60 deg. to the vaporizing stream of Al, Ti, etc., are provided, an excess gas discharge device 7 is provided below the material 8 to be treated, hence the vaporizing fine particles are bound densely and uniformly, and the vapor-deposited film 9 having uniform quality and thickness can be formed on the material 8 to be treated.

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) This specification describes the results of research and development regarding a dry plating apparatus to achieve uniformity of coating material and film thickness.

Recently, dry plating techniques such as vacuum deposition, sputtering, ion blating, and even chemical vapor deposition (CVD) have been used in various fields.

(Prior art) Regarding dry plating equipment used for dry plating processing, for example, Otsuka, Metal Surface Technology, Vol.
, 35, No. lp, 25-31 (1984)
! :There is a disclosure.

By the way, in the dry fitting process, gas is introduced into a processing chamber kept in a high vacuum or reduced pressure cloud environment, and evaporated substances from an evaporation source are evaporated into the introduced gas, and the two are combined before being applied to the material to be treated. It is common to attach
Regarding the relationship between evaporated matter and introduced gas, the following points can be pointed out as a problem.

That is, if the evaporated matter and the introduced gas are not combined in a proper ratio, the film quality and thickness will become non-uniform.

In addition, since conventional gas introduction is a method of supplying gas into the processing chamber, the concentration of the introduced gas becomes uneven within the processing chamber, reducing the coupling efficiency with evaporated matter and generating a large amount of invalid gas. The amount of gas must be increased.

Furthermore, when the processing chamber is filled with the introduced gas, a film is also formed near the evaporation source, making it difficult to form a film stably over a long period of time.

(Problems to be Solved by the Invention) Therefore, it is an object of the present invention to provide a dry plating apparatus that can optimize the combination of the introduced gas and the evaporated material by improving the blowing of the introduced gas.

(Means for Solving the Problems) The present invention provides a dry plating apparatus that combines gas introduced into a processing chamber with evaporated matter from an evaporation source and evaporates the material onto a processed material. A dry plating device characterized in that a pair of gas blowing devices are arranged along the evaporation flow with the evaporation flow as the center of symmetry, and the gas blowing direction with respect to the evaporation flow is set upward, and the gas introduced into the processing chamber and the evaporation In a dry plating device that combines evaporated matter from a source and deposits it on a treated material, the evaporation flow from the evaporation source is arranged along the evaporation flow with the evaporation flow as the center of symmetry, and the gas blowing direction with respect to the evaporation flow is set. a pair of gas blowing devices set upward, and a pair of gas blowing devices provided directly below the material to be treated corresponding to the gas blowing devices;
This is a dry plating device equipped with an excess gas discharge device that sucks in excess gas.

Further, in practice, it is advantageous to set the gas blowing direction with respect to the evaporative flow in a range where the intersection angle between the evaporative flow and the gas blowing direction is 60° or less.

Now, FIG. 1 shows a dry plating apparatus according to the present invention.

In the figure, 1 is an evaporation source containing an evaporated material 2 such as Ti or AI, 3 is an evaporated particle obtained by evaporating the evaporated material 2 by a heating device (not shown), 4 is a gas blowing device, and 5 is a gas particle cell 6 required. 7 is an excess gas discharge device, 8 is a material to be processed such as a metal strip, 9 is a coating, 10 is a processing chamber maintained in two high vacuum atmospheres, 11 is an exhaust duct, and 12 is a vacuum pump.

As shown in FIG.
A slit-shaped opening 13 having a length equivalent to that of the slit-shaped opening 13 is provided, and uniform heating is applied along the slit-shaped opening 13 by a heating device (not shown).

Further, as shown in FIG. 3, the gas blowing device 4 includes a header front chamber 14 having a large cross section to make the gas pressure distribution in the width direction of the processed material 8 uniform depending on the position of the gas inlet.
It consists of a header 15 communicating with the header front chamber 14, round nozzles 16 attached to the header 15 at appropriate pitches, and orifices 17 whose widths and diameters are adjusted to make gas pressure distribution uniform.

FIG. 4 shows a modification of the gas blowing device, in which a slit nozzle 18 is provided instead of the round nozzle 16, and the slit nozzle 18 is moved upward and downward by two sets of bolt rows 20 that are respectively engaged with brackets 19 fixed to the header 15. Sandwiched,
The opening diameter of the nozzle 18 is adjusted by tightening the bolt row 20.

Furthermore, as shown in FIG. 5, the surplus gas discharge device 7 includes a slit nozzle 21 that serves as a suction port for the introduced gas that is divided into two branches along the bottom surface of the material 8 to be treated, and a header 22 that controls the suction of the introduced gas. The opening of the slit nozzle 21 is adjusted by tightening two sets of bolt rows 24 engaged with the bracket 23.

Note that the above-mentioned gas blowing device 4 and surplus gas exhausting device 7
Each slit nozzle is designed so that its opening degree can be easily adjusted.
Made of material that can be elastically deformed freely.

Next, the procedure of vapor deposition processing will be explained.

First, the evaporated matter 2 is evaporated from the evaporation source 1 onto the material 8 to be treated, uniformly in the width direction and perpendicularly to the bottom surface.

The gas from the gas blowing device 4 is equal to this evaporation flow.
Gas is blown out to form a flow.

That is, as shown in FIG. 6, the gas blowing device 4 is arranged symmetrically with respect to a plane P that is perpendicular to the bottom surface of the material to be treated 8 from the center of the evaporation source 1, and the gas is blown from the nozzle. By setting the direction at an angle θ, the gas particles 5 are bonded to the high concentration region of the evaporated particles 3.

Note that the angle θ is preferably 60° or less.

This is because when the angle θ exceeds 60'4, the component force in the direction perpendicular to the evaporation flow becomes large, disturbing the evaporation flow and making the film quality non-uniform. The lower limit of the angle θ is not particularly specified, but at 0°, the evaporation flow and the gas ejection direction are parallel and it is almost impossible to expect the evaporation particles and gas particles to combine, so the angle should be at least over 0°.

The surplus gas that has reached the bottom surface of the material to be treated 8 is then sucked in through the slit nozzle 21 of the surplus gas discharge device 7, which is arranged symmetrically with respect to the above-described plane P directly below the bottom surface.

Therefore, the gas introduced into the processing chamber 10 forms an ideal upward flow between the gas blowing device 4 and the surplus gas exhausting device 7, and uniformly combines the evaporated particles 3 and the gas particles 5. realizable.

(Effects of the Invention) By using the apparatus of the present invention, it is possible to realize uniform combination of the evaporated matter and the introduced gas, and therefore it is possible to achieve uniform film quality and film thickness.

[Brief explanation of drawings]

FIG. 1 is an explanatory diagram of a dry plating device according to the present invention, FIG. 2 is a perspective view of an evaporation source, FIG. 3 is an explanatory diagram of a gas blowing device, FIG. 4 is an explanatory diagram showing another gas blowing device, and FIG. FIG. 5 is an explanatory diagram of the surplus gas discharge device, and FIG. 6 is a schematic diagram illustrating the gas blowing direction. 1... Evaporation source 2... Evaporation material 3...
Evaporated particles 4...Gas blowing device 5...Gas particles 6...Grid 7...Surplus gas discharge device Death...To-be-treated material 9...Coating
10... Processing chamber 11... Exhaust duct 12...
Vacuum Pump Applicant Kawasaki Steel Co., Ltd. Representative Patent Attorney Akira Sugimura Shudo Patent Attorney Sugi
Figure 3 cross-sectional view 411 by Ko Mura! 7 ori appetizers

Claims (1)

[Claims] 1. In a dry plating device that combines gas introduced into a processing chamber with evaporated matter from an evaporation source and deposits it on a processed material, the evaporation flow from the evaporation source is the center of symmetry. A dry plating device characterized in that a pair of gas blowing devices are arranged along an evaporation flow, and the gas blowing direction with respect to the evaporation flow is set upward. 2. In a dry plating device that combines the gas introduced into the processing chamber with the evaporated matter from the evaporation source and deposits it on the processed material, the evaporation flow from the evaporation source is the center of symmetry and is arranged along the evaporation flow. and a pair of gas blowing devices whose gas blowing direction with respect to the evaporation flow is set upward, and an excess gas discharge device provided directly below the material to be treated in correspondence with the gas blowing devices and sucking in excess gas. Dry plating equipment. 3. The device according to claim 1 or 2, wherein the gas blowing direction with respect to the evaporative flow is set in a range where the intersection angle between the evaporative flow and the gas blowing direction is 60° C. or less.