JPS6318056A - Arc type evaporation source - Google Patents
Arc type evaporation sourceInfo
- Publication number
- JPS6318056A JPS6318056A JP16261386A JP16261386A JPS6318056A JP S6318056 A JPS6318056 A JP S6318056A JP 16261386 A JP16261386 A JP 16261386A JP 16261386 A JP16261386 A JP 16261386A JP S6318056 A JPS6318056 A JP S6318056A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- gas
- arc
- vacuum
- cathode material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008020 evaporation Effects 0.000 title claims abstract description 24
- 238000001704 evaporation Methods 0.000 title claims abstract description 24
- 239000010406 cathode material Substances 0.000 claims abstract description 32
- 238000010891 electric arc Methods 0.000 claims abstract description 16
- 238000007664 blowing Methods 0.000 claims abstract description 4
- 238000005507 spraying Methods 0.000 claims description 6
- 238000009423 ventilation Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 32
- 239000000758 substrate Substances 0.000 description 21
- 239000010408 film Substances 0.000 description 12
- 238000000151 deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000002459 sustained effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、例えば基板にカソード物質を被着させる真
空アーク蒸着装置や、基板に対するカソード物質の被着
とイオン照射とを併用する薄膜形成装置等に用いられる
ものであうで、カソードにおけるアーク放電を利用して
カソード物質を蒸発させるアーク式蒸発源に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to, for example, a vacuum arc evaporation device for depositing a cathode material onto a substrate, and a thin film forming device that uses both deposition of a cathode material to a substrate and ion irradiation. This invention relates to an arc type evaporation source that evaporates cathode material using arc discharge at the cathode.
第２図は、真空アーク蒸着装置の一例を示す概略図であ
る。真空ポンプ４によって所定の真空度に排気される真
空容器２内に、基板２２保持用のホルダ２４が設けられ
ており、それに対向するようにアーク式蒸発源１０が設
けられている。FIG. 2 is a schematic diagram showing an example of a vacuum arc evaporation apparatus. A holder 24 for holding a substrate 22 is provided in a vacuum container 2 that is evacuated to a predetermined degree of vacuum by a vacuum pump 4, and an arc type evaporation source 10 is provided so as to face the holder 24.
アーク式蒸発源１０は、所望の組成をしたカソード１２
、アーク点弧用のトリガ電極１４、それをフィードスル
ー１６を介して真空容器２外から矢印Ａのように駆動す
る例えばエアシリンダ等から成る駆動装置１８を備えて
おり、カソード１２と真空容器２間には、両者間に真空
直流アーク放電を行わせるために例えば数十Ｖ程度の電
圧を印加するアーク電源２６が接続されている。The arc type evaporation source 10 includes a cathode 12 having a desired composition.
, a trigger electrode 14 for arc ignition, and a drive device 18 consisting of, for example, an air cylinder, which drives the trigger electrode 14 from outside the vacuum vessel 2 as shown by arrow A via a feedthrough 16, and connects the cathode 12 and the vacuum vessel 2. An arc power source 26 is connected between the two, which applies a voltage of, for example, several tens of volts to cause vacuum DC arc discharge between the two.
一方、ホルダ２４と真空容器２間には、ホルダ２４上の
基板２２に例えば数百ｖ〜ＩＫ■程度の負バイアス電圧
を印加するバイアス電源２８が接続すしている。また、
真空容器２内には、その壁面に設けられたガス導入口６
を介して、ガス源８からガスＧが導入されるようになっ
ている。On the other hand, a bias power supply 28 is connected between the holder 24 and the vacuum vessel 2 for applying a negative bias voltage of, for example, several hundred volts to IK■ to the substrate 22 on the holder 24. Also,
Inside the vacuum container 2, there is a gas inlet 6 provided on the wall surface of the vacuum container 2.
Gas G is introduced from a gas source 8 via the gas source 8 .
上記装置において基板２２上に化合物膜を被着させる工
程を例示すれば次の通りである。An example of the step of depositing a compound film on the substrate 22 in the above apparatus is as follows.
■ まず、基板２２上に被着させる膜の密着性等を向上
させるため、基板２２の清浄化を行う。(2) First, the substrate 22 is cleaned in order to improve the adhesion of the film deposited on the substrate 22.
即ち、真空容器２内にガスＧを導入することなく、真空
容器２内を例えば１０−’Ｔｏｒｒ台の高真空に排気し
ておき、基板２２に例えば−ＩＫＶ程度のバイアス電圧
をかけながら、アーク式蒸発源１０においてアーク放電
を行わせる。That is, without introducing gas G into the vacuum container 2, the inside of the vacuum container 2 is evacuated to a high vacuum of, for example, 10-' Torr, and while applying a bias voltage of, for example, about -IKV to the substrate 22, an arc is applied. Arc discharge is caused in the type evaporation source 10.
即ち、トリガ電極１４をカソード１２に接触させて最初
の火花を発生させた後トリガ電極１４をカソード１２よ
り引き離すと、カソード１２と真空容器２間にアーク放
電が持続され、それによってカソード１２が溶融されて
そこからカソード物質２０が蒸発させられる。That is, when the trigger electrode 14 is brought into contact with the cathode 12 to generate an initial spark, and then the trigger electrode 14 is pulled away from the cathode 12, an arc discharge is sustained between the cathode 12 and the vacuum vessel 2, thereby causing the cathode 12 to melt. The cathode material 20 is evaporated therefrom.
その場合、カソード物質２０の一部はイオン化されてお
り、このイオン化したカソード物質２０は、負電位の基
板２２に引き付けられて衝突し、そのエネルギーで基板
２２上の汚染物質をスパッタさせ、これによって基板２
２の清浄化が行われる。In that case, a portion of the cathode material 20 is ionized, and the ionized cathode material 20 is attracted to and collides with the substrate 22 at a negative potential, sputtering contaminants on the substrate 22 with its energy, thereby Board 2
2 cleaning is performed.
■ 次に、基板２２上に化合物膜を被着させる。(2) Next, a compound film is deposited on the substrate 22.
即ち、真空容器２内にガスＧとして例えば窒素ガス、炭
化水素系ガス、酸素ガス等の反応性ガスを、真空容器２
内が例えば１０−”〜１０−’Ｔｏ ｒ ｒ程度になる
ように導入し、また基板２２に印加するバイアス電圧も
例えば−２００Ｖ程度にし、そしてアーク式蒸発源１０
において前記と同様にしてアーク放電を行わせる。That is, a reactive gas such as nitrogen gas, hydrocarbon gas, oxygen gas, etc. is introduced into the vacuum container 2 as the gas G.
For example, the bias voltage applied to the substrate 22 is set to about -200V, and the arc type evaporation source 10
Then arc discharge is performed in the same manner as above.
それによって、カソード物質２０と反応性ガスＧとが化
合して、カソード物質２０の例えば窒化物、炭化物、酸
化物等から成る化合物膜が基板２２上に被着される。こ
の場合、基板２２のバイアス電圧を下げるのは、カソー
ド物質２０によるスパッタリングを小さくするためであ
る。Thereby, the cathode material 20 and the reactive gas G are combined, and a compound film of the cathode material 20, such as nitride, carbide, oxide, etc., is deposited on the substrate 22. In this case, the reason for lowering the bias voltage of the substrate 22 is to reduce sputtering by the cathode material 20.
ところが上記のような従来のアーク式蒸発源１Ｏにおい
ては、カソード１２からは細かいカソード物質２０と共
に大きな塊のカソード物質２０も同時に蒸発され、これ
らが基板２２に付着して、基板２２の表面を荒らして膜
の密着性を低下させると共に、膜組成の均一性や膜厚の
均−性等も低下させるという問題があった。特に、この
ような問題は、反応性ガスＧを導入しない上記■の工程
において顕著であった。However, in the conventional arc type evaporation source 1O as described above, large lumps of cathode material 20 as well as fine cathode material 20 are evaporated from the cathode 12 at the same time, and these adhere to the substrate 22 and roughen the surface of the substrate 22. There is a problem in that the adhesion of the film is reduced, and the uniformity of the film composition and the uniformity of the film thickness are also reduced. Particularly, such a problem was noticeable in the step (2) above, in which the reactive gas G was not introduced.
そこでこの発明は、大きな塊のカソード物質が蒸発され
るのを防ぐことができるアーク式蒸発源を提供すること
を主たる目的とする。Therefore, the main object of the present invention is to provide an arc type evaporation source that can prevent large lumps of cathode material from being evaporated.
この発明のアーク式蒸発源は、カソードにおけるアーク
放電を利用してカソード物質を蒸発させるものであって
、カソードの表面にガスを吹き付けるガス吹付は手段を
備えることを特徴とする。The arc type evaporation source of the present invention evaporates cathode material using arc discharge at the cathode, and is characterized in that it includes a gas spraying means for spraying gas onto the surface of the cathode.
ガス吹付は手段によってカソードの表面にガスを吹き付
けながら真空アーク放電を行わせると、カソードの表面
にガスの吸着層ができて陰極点が多数でき、アーク電流
が多（の陰極点に分散される。それによって、個々の陰
極点から蒸発されるカソード物質は細かなものとなり大
きな塊のカソード物質が蒸発されるのが防止される。Gas spraying is a means of blowing gas onto the surface of the cathode while causing vacuum arc discharge. This creates a gas adsorption layer on the surface of the cathode, creating many cathode spots, and the arc current is dispersed to many cathode spots. Thereby, the cathode material evaporated from the individual cathode spots becomes fine, and large chunks of cathode material are prevented from being evaporated.
第１図は、この発明の一実施例に係るアーク式蒸発源を
真空容器に取り付けた状態で示す断面図である。この実
施例においては、アーク点弧用のトリガ電極５２であっ
て内部に通気孔５４を有するものと、トリガ電極５２を
機械的に保持かつ駆動するための軸４４であって内部に
トリガ電極５２の通気孔５４に連通ずる通気孔４６を有
するものと、軸４４の通気孔４６にガスＧを導入するた
めのガス導入口４８等によって前述したガス吹付は手段
を構成している。FIG. 1 is a sectional view showing an arc type evaporation source according to an embodiment of the present invention attached to a vacuum container. In this embodiment, the trigger electrode 52 for arc ignition has a ventilation hole 54 inside, and the shaft 44 for mechanically holding and driving the trigger electrode 52 has a trigger electrode 52 inside. The above-mentioned gas blowing means includes a vent hole 46 communicating with the vent hole 54 of the shaft 44 and a gas inlet 48 for introducing the gas G into the vent hole 46 of the shaft 44.
全体を詳述すると、例えば前述したような真空容器２に
、絶縁物６０を介してフランジ６２が取り付けられてお
り、フランジ６２の前面側（即ち真空容器２の内側）に
は前述したようなカソード１２が取り付けられている。To explain the whole in detail, for example, a flange 62 is attached to the vacuum vessel 2 as described above through an insulator 60, and a cathode as described above is attached to the front side of the flange 62 (i.e., inside the vacuum vessel 2). 12 is attached.
フランジ６２の背面側には、カソード１２の前面におけ
るアークの状態を制御するための磁石６４が取り付けら
れている。カソード１２０回りには、カソード１２とあ
る程度離れた所の真空容器２間でアーク放電させるため
のシールド板５６が設けられており、それは抵抗器５８
によって接地されている。そしてカソード１２と真空容
器２間には、アーク放電用の前述したようなアーク電源
２６が接続されている。A magnet 64 is attached to the rear side of the flange 62 for controlling the state of the arc on the front surface of the cathode 12. A shield plate 56 is provided around the cathode 120 to cause arc discharge between the cathode 12 and the vacuum vessel 2 at a certain distance, and it is connected to a resistor 58.
is grounded by An arc power source 26 as described above for arc discharge is connected between the cathode 12 and the vacuum vessel 2.
一方、真空容器２の内外に、フィードスルー３２を介し
て軸４４が通されており、その真空容器２内側の先端部
にはトリガ電極５２が、真空容器２外側の根元部には前
述したような駆動装置１８がそれぞれ結合されている。On the other hand, a shaft 44 is passed through the feedthrough 32 inside and outside the vacuum container 2, and a trigger electrode 52 is provided at the tip inside the vacuum container 2, and as described above, at the base outside the vacuum container 2. drive devices 18 are respectively coupled.
トリガ電極５２の先端部は、その矢印Ａのような動きに
よってカソード１２の所定部分、例えば中央部分に当接
可能なように曲げられており、かつ当該トリガ電極５２
の内部には端から端まで通気孔５４が設けられている。The tip of the trigger electrode 52 is bent so that it can come into contact with a predetermined portion, for example, the center portion, of the cathode 12 by moving in the direction of arrow A, and the trigger electrode 52
Ventilation holes 54 are provided inside from end to end.
軸４４の内部にも、トリガ電極５２の通気孔５４に連通
ずる通気孔４６がその先端から根元部付近まで設けられ
ており、当該通気孔４６は軸４４の根元部に設けられた
ガス導入口４８に連通している。A ventilation hole 46 communicating with the ventilation hole 54 of the trigger electrode 52 is also provided inside the shaft 44 from its tip to the vicinity of the base, and the ventilation hole 46 is connected to a gas inlet provided at the base of the shaft 44 It is connected to 48.
尚、フィードスルー３２は、絶縁物３４、ハウジング３
８、ハウジングカバー４２等を備えており、絶縁物３４
と真空容器２およびハウジング３８間は、０リング等か
ら成るパツキン３６によって真空シールされており、ハ
ウジング３８と軸４４間はＸリング等から成るパツキン
４ｏによって摺動可能状態で真空シールされている。ま
た軸４４は、アーク点弧時の電流制限用の抵抗器５ｏを
介して接地されている。Note that the feed through 32 is connected to the insulator 34 and the housing 3.
8, includes a housing cover 42, etc., and an insulator 34
The space between the vacuum container 2 and the housing 38 is vacuum-sealed by a packing 36 made of an O-ring or the like, and the space between the housing 38 and the shaft 44 is vacuum-sealed in a slidable state by a packing 4o made of an X-ring or the like. The shaft 44 is also grounded via a resistor 5o for limiting current during arc ignition.
上記アーク式蒸発源の動作例を説明すると、真空容器２
内を所定の真空度に排気しておき、ガス導入口４８に図
示しないフレキシブル配管等を介して、例えば前述した
ようなガス源８がら反応性ガスＧをある程度の（例えば
１ ｋ ｇ ／ｃｍ２Ｇ程度の）ガス圧で供給すると、
真空容器２内が真空であることと相俟って、当該反応性
ガスＧは軸４４の通気孔４６およびトリガ電極５２の通
気孔５４を通してカソード１２の表面の所定領域に吹き
付けられる。To explain an example of the operation of the above-mentioned arc type evaporation source, the vacuum vessel 2
The inside is evacuated to a predetermined degree of vacuum, and reactive gas G is supplied to the gas inlet 48 via a flexible pipe (not shown) or the like to a certain extent (for example, about 1 kg/cm2G) ) When supplied with gas pressure,
Coupled with the vacuum inside the vacuum container 2, the reactive gas G is blown onto a predetermined area of the surface of the cathode 12 through the vent hole 46 of the shaft 44 and the vent hole 54 of the trigger electrode 52.
そのような状態で、かつカソード１２にアーク電源２６
から所定の電圧を印加した状態で、駆動装置１８によっ
て軸４４を駆動して、トリガ電極５２の先端をカソード
１２に接触させて火花を発生させた後引き離すと、カソ
ード１２と真空容器２間にアーク放電が持続され、それ
によってカソード１２が溶融されてそこからカソード物
質２０が蒸発させられる。In such a state, and when the cathode 12 is connected to the arc power source 26
When a predetermined voltage is applied to the drive device 18, the shaft 44 is driven, and the tip of the trigger electrode 52 is brought into contact with the cathode 12 to generate a spark, and then pulled apart. The arc discharge is sustained, thereby melting cathode 12 and vaporizing cathode material 20 therefrom.
その場合、従来と違って、カソード１２の表面に反応性
ガスＧを吹き付けながら真空アーク放電を行わせるので
、カソード１２の表面上のガス圧が高くなり、カソード
１２の表面には反応性ガスＧの吸着層（言わば不純物層
）が生じて仕事関数の低い部分、即ちアーク放電の陰極
点が多数できる。その結果、アーク放電は多くの陰極点
に分散されることとなり、トータルのアーク電流が同じ
でも個々の陰極点におけるカソード１２の溶融量は少な
くなるので、大きな塊ができにくくなり、個々の陰極点
から蒸発されるカソード物質は細かなものとなる。In that case, unlike the conventional method, vacuum arc discharge is performed while spraying the reactive gas G onto the surface of the cathode 12, so the gas pressure on the surface of the cathode 12 increases, and the reactive gas G is applied to the surface of the cathode 12. An adsorption layer (so to speak, an impurity layer) is formed, and a large number of areas with a low work function, that is, cathode spots for arc discharge, are formed. As a result, the arc discharge is dispersed to many cathode spots, and even if the total arc current is the same, the amount of melting of the cathode 12 at each cathode spot is smaller, making it difficult to form large lumps and The cathode material evaporated from becomes fine.
従ってこのようなアーク式蒸発源を例えば第２図に示し
たような真空アーク蒸着装置に用いれば、基板２２を清
浄化する場合および基板２２に膜形成する場合のいずれ
においても、従来のような問題を排除することができる
。即ち、細かなカソード物質２０によって基板２２をス
パッタクリーニングすることができるので基板２２の表
面を荒らすことはな（、しかも細かなカソード物質２０
を基板２２に被着させることができるので、基板２２上
には粒子の細かな均質の膜が均一厚さに形成されるよう
になり、膜の密着性や膜質が向上する。Therefore, if such an arc type evaporation source is used in a vacuum arc evaporation apparatus as shown in FIG. problem can be eliminated. That is, since the substrate 22 can be sputter-cleaned using the fine cathode material 20, the surface of the substrate 22 is not roughened (and the fine cathode material 20
can be deposited on the substrate 22, so that a homogeneous film with fine particles and a uniform thickness is formed on the substrate 22, and the adhesion and quality of the film are improved.
しかもこのアーク式蒸発源においては、多数の陰極点が
トリガ電極５２のガス吹出し口に対向したカソード１２
上の比較的限定された領域に集中するため、カソード物
質２０の発散（広がり）が比較的少なく、カソード物質
２０はカソード１２の正面方向にある程度集中するので
、カソード１２の正面におけるカソード物質２０の被着
レートが高まり、効率的な膜形成が可能になるという効
果も得られる。Moreover, in this arc type evaporation source, a large number of cathode points are connected to the cathode 12 facing the gas outlet of the trigger electrode 52.
Since the cathode material 20 is concentrated in a relatively limited area above, the divergence (spreading) of the cathode material 20 is relatively small, and the cathode material 20 is concentrated to some extent in the front direction of the cathode 12, so that the cathode material 20 in front of the cathode 12 is It also has the effect of increasing the deposition rate and making it possible to form a film efficiently.
ちなみに、第２図のような装置においても真空容器２内
に反応性ガスＧを導入すれば、導入しないときに比べて
カソード１２における陰極点数はある程度増える場合も
あるが、この実施例のように反応性ガスＧをカソード１
２に吹き付けるものではないため、その増え方は少なく
、また陰極点は広い領域に分散するので、この実施働程
の効果は得られない。Incidentally, even in the apparatus shown in FIG. 2, if the reactive gas G is introduced into the vacuum vessel 2, the number of cathodes in the cathode 12 may increase to some extent compared to when it is not introduced. Reactive gas G to cathode 1
2, the amount of increase is small, and the cathode spots are dispersed over a wide area, so the effect of this implementation process cannot be obtained.
また、この実施例におていは、カソード１２に対するガ
ス吹付は手段として、アーク点弧用のトリガ電極５２お
よびその駆動用の軸４４を兼用しているので、余分なも
のを設ける必要がなく、構成が簡単でスペースも少なく
て済むという利点もある。もっとも、トリガ電極５２等
を兼用することなく、専用のガス導入管等によってカソ
ード１２に対するガス吹付は手段を構成しても良いのは
勿論である。Furthermore, in this embodiment, the gas is sprayed onto the cathode 12 using the trigger electrode 52 for arc ignition and the shaft 44 for driving it, so there is no need to provide any extra components. It also has the advantage of being simple to configure and requiring less space. Of course, it is also possible to use a dedicated gas introduction pipe or the like to spray gas onto the cathode 12 without also using the trigger electrode 52 or the like.
尚、上記のようなアーク式蒸発源は、第２図に示した以
外の真空アーク蒸着装置や、一番初めに例示したような
薄膜形成装置等に広く用いることができるのは言うまで
もない。It goes without saying that the arc type evaporation source as described above can be widely used in vacuum arc evaporation apparatuses other than those shown in FIG. 2, thin film forming apparatuses as exemplified at the beginning, and the like.
〔発明の効果〕
以上のようにこの発明によれば、大きな塊のカソード物
質が蒸発されるのが防止される。即ち、細かいカソード
物質を主体に蒸発させることができ、従ってこのアーク
式蒸発源を用いれば、例えば基板に対して密着性や膜質
の優れた膜を被着させることが可能になる。[Effects of the Invention] As described above, according to the present invention, large lumps of cathode material are prevented from being evaporated. That is, it is possible to evaporate mainly fine cathode materials, and therefore, by using this arc type evaporation source, it is possible to deposit a film with excellent adhesion and film quality onto a substrate, for example.
またこの発明によれば、蒸発させられるカソード物質は
カソードの正面方向にある程度集中するので、カソード
の正面におけるカソード物質の被着レートが高まるとい
う効果も得られる。Further, according to the present invention, since the evaporated cathode material is concentrated to some extent in the front direction of the cathode, the deposition rate of the cathode material on the front surface of the cathode is increased.
第１図は、この発明の一実施例に係るアーク式蒸発源を
真空容器に取り付けた状態で示す断面図である。第２図
は、真空アーク蒸着装置の一例を示す概略図である。
２・・・真空容器、１２・・・カソード、２０・・・カ
ソード物質、４４・・・軸、４６．５４・・・通気孔、
５２・・・ トリガ電極、Ｇ・・・ガス。FIG. 1 is a sectional view showing an arc type evaporation source according to an embodiment of the present invention attached to a vacuum container. FIG. 2 is a schematic diagram showing an example of a vacuum arc evaporation apparatus. 2... Vacuum container, 12... Cathode, 20... Cathode material, 44... Shaft, 46.54... Vent hole,
52... Trigger electrode, G... Gas.
Claims (2)
物質を蒸発させるものであって、カソードの表面にガス
を吹き付けるガス吹付け手段を備えることを特徴とする
アーク式蒸発源。(1) An arc-type evaporation source that evaporates cathode material using arc discharge at the cathode, and is characterized by comprising a gas spraying means for spraying gas onto the surface of the cathode.
極であって内部に通気孔を有するものと、トリガ電極を
機械的に保持かつ駆動するための軸であって内部にトリ
ガ電極の通気孔に連通する通気孔を有するものと、軸の
通気孔にガスを導入するガス導入手段とを備えることを
特徴とする特許請求の範囲第１項記載のアーク式蒸発源
。(2) The gas blowing means is a trigger electrode for arc ignition and has a ventilation hole inside, and a shaft for mechanically holding and driving the trigger electrode and has a trigger electrode inside. 2. The arc type evaporation source according to claim 1, further comprising: a vent hole communicating with the vent hole; and a gas introducing means for introducing gas into the vent hole of the shaft.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61162613A JPH07122131B2 (en) | 1986-07-10 | 1986-07-10 | Arc type evaporation source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61162613A JPH07122131B2 (en) | 1986-07-10 | 1986-07-10 | Arc type evaporation source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6318056A true JPS6318056A (en) | 1988-01-25 |
| JPH07122131B2 JPH07122131B2 (en) | 1995-12-25 |
Family
ID=15757926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61162613A Expired - Lifetime JPH07122131B2 (en) | 1986-07-10 | 1986-07-10 | Arc type evaporation source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07122131B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01294332A (en) * | 1988-05-20 | 1989-11-28 | Nissin Electric Co Ltd | Ion source |
| EP0725424A1 (en) * | 1995-01-23 | 1996-08-07 | Nissin Electric Company, Limited | Arc-type evaporator |
| US20140251791A1 (en) * | 2013-03-05 | 2014-09-11 | United Technologies Corporation | Cathodic arc deposition stinger |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6141764A (en) * | 1984-08-02 | 1986-02-28 | Natl Res Inst For Metals | Method and apparatus for vapor deposition under vacuum arc reaction |
-
1986
- 1986-07-10 JP JP61162613A patent/JPH07122131B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6141764A (en) * | 1984-08-02 | 1986-02-28 | Natl Res Inst For Metals | Method and apparatus for vapor deposition under vacuum arc reaction |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01294332A (en) * | 1988-05-20 | 1989-11-28 | Nissin Electric Co Ltd | Ion source |
| EP0725424A1 (en) * | 1995-01-23 | 1996-08-07 | Nissin Electric Company, Limited | Arc-type evaporator |
| US5843293A (en) * | 1995-01-23 | 1998-12-01 | Nissin Electric Co., Ltd. | Arc-type evaporator |
| US20140251791A1 (en) * | 2013-03-05 | 2014-09-11 | United Technologies Corporation | Cathodic arc deposition stinger |
| US10704136B2 (en) * | 2013-03-05 | 2020-07-07 | Raytheon Technologies Corporation | Cathodic arc deposition stinger |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07122131B2 (en) | 1995-12-25 |
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