JPS63240088A - Die bonding device - Google Patents
Die bonding deviceInfo
- Publication number
- JPS63240088A JPS63240088A JP7475387A JP7475387A JPS63240088A JP S63240088 A JPS63240088 A JP S63240088A JP 7475387 A JP7475387 A JP 7475387A JP 7475387 A JP7475387 A JP 7475387A JP S63240088 A JPS63240088 A JP S63240088A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser element
- die bonding
- radiator plate
- heat sink
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 238000005259 measurement Methods 0.000 claims abstract description 3
- 230000002950 deficient Effects 0.000 abstract description 6
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 239000002699 waste material Substances 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔ｆｆｌ業上の利用分野〕
本発明は半導体レーザ素子を放熱板上にダイボンディン
グするダイボンディング装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application in the FFL Industry] The present invention relates to a die bonding apparatus for die bonding a semiconductor laser element onto a heat sink.
従来、この種のダイボンディング装置は、放熱板の位置
を認識する認１ａＩａ能と、半導体レーザ素子を放熱板
に向性する機能しか「しておらず、外観上、半導体レー
ザ素子、放熱板及びそれらの位置関係が正常であれば、
その半導体レーザ素子の特性の良否にかかわらず、半導
体レーザ素子を放熱板上に決められた通りにしか円管す
ることができなかった。Conventionally, this type of die bonding equipment has only the function of recognizing the position of the heat sink and the function of directing the semiconductor laser element to the heat sink. If their positional relationship is normal,
Regardless of the quality of the characteristics of the semiconductor laser element, it has been possible to form the semiconductor laser element into a circular tube only in a predetermined manner on the heat sink.
しかし上記の従来技術では、半導体レーザ素子が不良品
であってもダイボンディングがなされ、コストアップに
つながっていた。However, in the above-mentioned conventional technology, die bonding is performed even if the semiconductor laser element is defective, leading to an increase in costs.
そこで、本発明は従来のこのような問題点を解決するた
め、ダイボンディング時に半導体レーザ素子の特性の良
否を判定し、不良品についてはダイボンディングを行な
わないことを目的としている。SUMMARY OF THE INVENTION In order to solve these conventional problems, it is an object of the present invention to determine whether the characteristics of a semiconductor laser element are good or bad during die bonding, and to not perform die bonding on defective products.
（問題点を解決するための手段〕
上記問題点を解決するために、本発明のダイボンディン
グ装置は、半導体レーザ素子を放熱板にダイボンディン
グする装置におい、て、ｎイ記放熱板に前記半導体レー
ザ素子を接触させ、前記半導体レーザ素子の特性を測定
し、前！ｉ！ｉｔ結果の良否によりダイボンディングす
るか否かを決定するＣ１能を４備したことを特徴とする
。(Means for Solving the Problems) In order to solve the above-mentioned problems, the die bonding apparatus of the present invention is an apparatus for die bonding a semiconductor laser element to a heat sink. It is characterized by having four C1 functions that bring a laser element into contact, measure the characteristics of the semiconductor laser element, and decide whether or not to perform die bonding based on the quality of the pre!i!it results.
以下に本発明の実施例を図面に基づいて説明する。第１
図は本発明の第１の実施例を示す半導体レーザ素子のダ
イボンディング装置の主要部である。Embodiments of the present invention will be described below based on the drawings. 1st
The figure shows the main parts of a die bonding apparatus for a semiconductor laser device according to a first embodiment of the present invention.
放熱板１は、接地用端子２及び半導体レーザ素子７のワ
イヤーボンディング側端子３と一体となっているが、半
導体レーザ素子７のワイヤーボンディング側端子３は、
絶縁のためのガラス４を介して放熱板ｌと接続されてい
る。半４体レーザ素子７を駆動するための電源５から、
ダイボンディング装置のコレブト６へは、ワイヤー８で
ｔ！枕されている。コレブト６は、導電性材料より成っ
ており、半導体レーザ素子に電流が注入できる具合−に
作られている。放熱板１側の接ｊ１川端子２はワイヤー
９で電源５に接続されている。一方、半導体レーザ素子
７の特性の良否を判定するための受光素子１４は、ステ
ム１０に円管されており、ステム１０は、接地用端子１
１及び受光素子１４のワイヤーボンディング側端子１２
と一体となっているが、受光素子１４のワイヤーボンデ
ィング側端子１２は、絶縁のためのガラス１０を介して
ステム１０と接続されている。受光素子１４は端子１２
にワイヤー１５でワイヤーボッディングされている。受
光素子１４川電源１３と、接地用端子１１及びワイヤー
ボンディング側端子１２はそれぞれワイヤー１７．１Ｇ
で接続されている。放熱板１とステムｌＯは、ホルダー
１８で固定されている。半導体レーザ素子７からレーザ
発振したレーザ光２０は第１図のごとく受光素子１４で
モニターされる。The heat sink 1 is integrated with the grounding terminal 2 and the wire bonding side terminal 3 of the semiconductor laser element 7, but the wire bonding side terminal 3 of the semiconductor laser element 7 is
It is connected to a heat sink l via a glass 4 for insulation. From the power supply 5 for driving the semi-quadram laser element 7,
Connect the wire 8 to the die bonding equipment COLEBUT 6 using t! There are pillows. The collector 6 is made of a conductive material and is constructed to allow current to be injected into the semiconductor laser element. A contact terminal 2 on the side of the heat sink 1 is connected to a power source 5 through a wire 9. On the other hand, a light receiving element 14 for determining the quality of the characteristics of the semiconductor laser element 7 is formed into a circular tube in a stem 10.
1 and the wire bonding side terminal 12 of the light receiving element 14
However, the wire bonding side terminal 12 of the light receiving element 14 is connected to the stem 10 via the glass 10 for insulation. The light receiving element 14 is connected to the terminal 12
It is wire boded with wire 15. The light receiving element 14, the power supply 13, the grounding terminal 11, and the wire bonding side terminal 12 are each connected to a wire 17.1G.
connected with. The heat sink 1 and the stem 1O are fixed with a holder 18. A laser beam 20 oscillated from the semiconductor laser element 7 is monitored by a light receiving element 14 as shown in FIG.
グイポンディフグ方法は以下の様にして行なう。コレブ
ト６で半導体レーザ素子７を吸Ｃ支１７？し、放熱板ｌ
上に第１図のごとく接触させる。この時にはまだダイボ
ンディングを行なっていない、この状態で、電源５で半
導体レーザ素子７に電流を注入し、レーザ発振をさせ、
モニター川受光素子１４でレーザ光２０のモニターを行
なう。The Guipondifugu method is carried out as follows. Semiconductor laser element 7 is sucked by C support 17 with COLEBUT 6? and heat sink l
Contact the top as shown in Figure 1. At this time, die bonding has not yet been performed, and in this state, current is injected into the semiconductor laser element 7 using the power supply 5 to cause laser oscillation.
The laser beam 20 is monitored by the monitor light receiving element 14.
ここで、注入電流−光出力特性を調べ、しきい値電流、
外部微分量子効率、キンクの訂無呻で、半導体レーザ素
子７の良否を判断する。もし、半導体レーザ素子７が不
良品であるならダイボンディングを行なわず、処分して
しまい、もし、良品であったなら、放熱板ｌに熱を加え
ることによりダイボンディングを行なうものとする。Here, we investigated the injection current vs. optical output characteristics, and determined the threshold current and
The quality of the semiconductor laser device 7 is determined based on the external differential quantum efficiency and the kink correction. If the semiconductor laser element 7 is a defective product, die bonding is not performed and it is discarded, and if it is a good product, die bonding is performed by applying heat to the heat sink l.
第２図は、第１図とは異なる本発明の第２の実施例を示
す半導体レーザ素子のダイボンディング装置の主要部で
ある。第１の実施例と異なるところは、半導体レーザ素
子７の特性の良否の判定方法である。半導体レーザ素子
７からレーザ発振したレーザ光２０は、拡がりをもっ°
（いるためレンズ２３でテレビカメラ２１上に結像させ
、テレビモニタ２２で、ニアフィールドパターン観察す
る。光の漏れ、及び横モード等で、半４体レーザ素子７
の良否を判断する。以下は、ｉｔの実施例と同様にして
、ダイボンディングを行なう。FIG. 2 shows the main parts of a die bonding apparatus for a semiconductor laser device, showing a second embodiment of the present invention, which is different from FIG. 1. The difference from the first embodiment is the method of determining whether the characteristics of the semiconductor laser element 7 are good or bad. The laser beam 20 oscillated from the semiconductor laser element 7 has a wide spread.
(Because of this, the image is formed on the television camera 21 with the lens 23, and the near-field pattern is observed on the television monitor 22. Due to light leakage, transverse mode, etc.
judge whether it is good or bad. In the following, die bonding is performed in the same manner as in the IT embodiment.
ここでは実施例として注入電流−光出力特性及びニアフ
ィールドパターン観察という２ｉｉ！Ｉりの方法を示し
たが、当然他の評価方法により半導体レーザの良否を判
定してもよい。Here, as an example, 2ii! injection current-optical output characteristics and near-field pattern observation will be presented. Although the above method has been shown, the quality of the semiconductor laser may of course be determined by other evaluation methods.
本発明によれば、半導体レーザ素子を放熱板上に接触さ
せた状態で、半導体レーザ素子の特性を２１１１１５１
！シ、その測定結果の良否によりダイボンディングする
か否かを決定し、不良品にはダイボンディングを行なわ
ないことにより、放熱板の無駄をなくシ、ダイボンディ
ングに要する時間を速くでき、原価の低減を推進するこ
とが可能である。According to the present invention, the characteristics of the semiconductor laser element are determined to be 2111151 while the semiconductor laser element is in contact with the heat sink.
! By determining whether or not to perform die bonding based on the quality of the measurement results, and not performing die bonding on defective products, waste of heat sinks can be eliminated, the time required for die bonding can be shortened, and costs can be reduced. It is possible to promote
ｍ１図は本発明のダイボンディング装置の主要部分図。
第２図は第１図とは別の本発明のダイボンディング装置
の主要部分図。
ｌ・・・放熱板
２．１１・・・接地用端子
３．１２・・・ワイヤーボンディング側端子４．１９・
・・ガラス
５，１３・・・電源
６・・・コレット
７・・・半導体レーザ素子
８．０，１５．ＩＥ）、１７・・・ワイヤーｌＯ・・・
ステム
１４・・・受光素子
１８・・・ホルダー
２０・・・レーザ光
２１・・・テレビカメラ
２２・・・テレビモニタ
以 上
出願人 セイコーエプソン株式会社
代理人 弁理士 最 上 彷 他１名第１困Figure m1 is a main partial diagram of the die bonding apparatus of the present invention. FIG. 2 is a diagram of main parts of the die bonding apparatus of the present invention, which is different from FIG. 1. l... Heat sink 2.11... Grounding terminal 3.12... Wire bonding side terminal 4.19.
...Glass 5, 13...Power supply 6...Collet 7...Semiconductor laser element 8.0, 15. IE), 17...Wire lO...
Stem 14...Light receiving element 18...Holder 20...Laser beam 21...TV camera 22...TV monitor and above Applicant Seiko Epson Co., Ltd. Agent Patent attorney Aki Mogami and 1 other person No. 1 trouble
Claims (1)
において、前記放熱板に前記半導体レーザ素子を接触さ
せ、前記半導体レーザ素子の特性を測定し、前記測定結
果の良否によりダイボンディングするか否かを決定する
機能を具備したことを特徴とするダイボンディング装置
。In an apparatus for die bonding a semiconductor laser element to a heat sink, the semiconductor laser element is brought into contact with the heat sink, the characteristics of the semiconductor laser element are measured, and whether or not to perform die bonding is determined based on the quality of the measurement result. A die bonding device characterized by having functions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7475387A JPS63240088A (en) | 1987-03-27 | 1987-03-27 | Die bonding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7475387A JPS63240088A (en) | 1987-03-27 | 1987-03-27 | Die bonding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63240088A true JPS63240088A (en) | 1988-10-05 |
Family
ID=13556341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7475387A Pending JPS63240088A (en) | 1987-03-27 | 1987-03-27 | Die bonding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63240088A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2377402A (en) * | 2001-07-12 | 2003-01-15 | Agilent Technologies Inc | Die bond strip |
-
1987
- 1987-03-27 JP JP7475387A patent/JPS63240088A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2377402A (en) * | 2001-07-12 | 2003-01-15 | Agilent Technologies Inc | Die bond strip |
| GB2377402B (en) * | 2001-07-12 | 2004-05-12 | Agilent Technologies Inc | Improved diebond strip |
| US6752308B2 (en) | 2001-07-12 | 2004-06-22 | Agilent Technologies, Inc. | Diebond strip |
| US7559455B2 (en) | 2001-07-12 | 2009-07-14 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Diebond strip |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6407560B1 (en) | Thermally-induced voltage alteration for analysis of microelectromechanical devices | |
| US4441248A (en) | On-line inspection method and system for bonds made to electronic components | |
| JPH0535983B2 (en) | ||
| US6395580B1 (en) | Backside failure analysis for BGA package | |
| US6836321B2 (en) | Testing bottom-emitting VCSELs | |
| JPH06302917A (en) | Preparation of semiconductor device and apparatus therefor | |
| JPS63240088A (en) | Die bonding device | |
| JP3133052B2 (en) | Position-resolved measurement method of diffusion distance of minority carrier in semiconductor crystal | |
| US6873166B1 (en) | Localized heating for defect isolation during die operation | |
| US6084423A (en) | Method and device of testing a semiconductor integrated circuit chip in which a voltage across the semiconductor integrated circuit chip is detected while an ultrasonic wave beam is projected thereon | |
| JP2518533B2 (en) | Inspection device for internal interconnection of semiconductor integrated circuits | |
| JP4827490B2 (en) | Semiconductor device manufacturing system | |
| JPS63153880A (en) | Method for inspecting semiconductor laser device | |
| JPS5821838A (en) | Wafer test system | |
| JPS59195645A (en) | Device for washing exposure mask | |
| JP3996263B2 (en) | Device for removing foreign matter adhering to the probe | |
| JPS6384132A (en) | Method and apparatus for inspecting wire bonding | |
| JP3100846B2 (en) | Light emitting diode array chip mounting method, mounting inspection method, and inspection apparatus used therefor | |
| JPH109830A (en) | Method and equipment for measurement and method and equipment for manufacturing semiconductor | |
| JPS6112040A (en) | Inspection method for semiconductor device | |
| JPS629724Y2 (en) | ||
| JPS62165991A (en) | Semiconductor laser element inspecting apparatus | |
| JPH05183192A (en) | Inspecting device for surface light emitting/receiving element | |
| JPS6380547A (en) | Wire bonding apparatus | |
| JPH0296344A (en) | Wire-bonding method and apparatus therefor |