JPS6380547A - Wire bonding apparatus - Google Patents

Wire bonding apparatus

Info

Publication number
JPS6380547A
JPS6380547A JP61225710A JP22571086A JPS6380547A JP S6380547 A JPS6380547 A JP S6380547A JP 61225710 A JP61225710 A JP 61225710A JP 22571086 A JP22571086 A JP 22571086A JP S6380547 A JPS6380547 A JP S6380547A
Authority
JP
Japan
Prior art keywords
bonding
wire
point
gold wire
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61225710A
Other languages
Japanese (ja)
Inventor
Yozo Sanaka
佐仲　洋三
Masato Nagasawa
長澤　正人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61225710A priority Critical patent/JPS6380547A/en
Publication of JPS6380547A publication Critical patent/JPS6380547A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
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    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78268—Discharge electrode
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    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/8212—Aligning
    • H01L2224/82148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/82169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, e.g. nozzle
    • H01L2224/8218—Translational movements
    • H01L2224/82181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip
    • H—ELECTRICITY
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/8521—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/85214—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

PURPOSE:To directly detect the propriety of a bonding thereby to be able to prevent an improper bonded state from being erroneously detected by providing a light emitting unit and a photodetector at the opposed positions through a bonding wire, and shielding the light by the wire extended to a bonding point. CONSTITUTION:When a capillary 11 is moved down onto the bonding point 14a of a semiconductor chip 14 and a gold wire 12 is bonded by ultrasonic fusion-bonding to the bonding point 14a, the wire 12 is led from the capillary 11, and extended to the point 14a. When an improper bond occurs in this state, a tension by air for preventing the wire 12 from slacking energizes the wire 12 upward. Thus, a laser light irradiated from a laser irradiating unit 15 through an optical fiber 16 is photodetected by a laser photodetector 18 through a photodetecting optical fiber 19 without being shielded by the wire 12. Thus, light shielding signals Sb1 Sb3 are not output from the photodetector 18: As a result, a CPU 21 detects the improper bond of the wire 12 to the point 12, and stops the following step.

Description

【発明の詳細な説明】 ［発明の目的コ （産業上の利用分野） 本発明は、移動可能なボンディングツールから導出され
たボンディングワイヤを接合点に接合するためのワイヤ
ボンディング装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention (Field of Industrial Application)] The present invention relates to a wire bonding device for bonding a bonding wire led out from a movable bonding tool to a bonding point.

（従来の技術） この種のワイヤボンディング装置の一例として、第４図
に示すものが供されている。この第４図において、１は
ボンディングツールたるキャピラリで、これは移動曲線
Ａに従って移動可能に設けられている。２はボンディン
グワイヤたる例えば金線で、これはキャピラリ１から導
出されるようになっている。３及び４は図示しないワー
クテーブル上に固定された夫々リードフレーム及び半導
体チップである。このような構成において、まず第４図
（ａ）に示すように、金線２の先端にボール状部２ａが
形成された状態のキャピラリ１を半導体チップ４の接合
点４ａの上方に位置させる。(Prior Art) As an example of this type of wire bonding device, one shown in FIG. 4 is provided. In this FIG. 4, 1 is a capillary which is a bonding tool, and this is provided so as to be movable according to a movement curve A. 2 is a bonding wire, for example a gold wire, which is led out from the capillary 1. 3 and 4 are a lead frame and a semiconductor chip, respectively, which are fixed on a work table (not shown). In such a configuration, first, as shown in FIG. 4(a), the capillary 1 with the ball-shaped portion 2a formed at the tip of the gold wire 2 is positioned above the junction point 4a of the semiconductor chip 4.

この状態から第４図（ｂ）に示すように、キャピラリ１
を下降させてボール状部２ａ即ち金線２を接合点４ａに
押し下げながら超音波温石により接合する。次に、第４
図（ｃ）及び（ｄ）に示すよう（こ、キャピラリ１を」
二昇させながらリードフレーム３の接合点３ａの上方ま
で移動させ、更に、下降させて金線２を接合点３ａに同
様に接合する。From this state, as shown in FIG. 4(b), the capillary 1
is lowered to push down the ball-shaped portion 2a, that is, the gold wire 2, to the bonding point 4a while bonding is performed using an ultrasonic hot stone. Next, the fourth
As shown in Figures (c) and (d),
The gold wire 2 is moved to above the bonding point 3a of the lead frame 3 while being raised twice, and is further lowered to bond the gold wire 2 to the bonding point 3a in the same manner.

この後、キャピラリ１の先端に金線２が少し出るように
してから、図示しないクランプ装置により金線２をクラ
ンプして引き千切る。そして、第４図（ｅ）に示すよう
に、このような状態のキャピラリ１に放電電極５を近接
させて、金線２と放電電極５との間に高電圧を印加して
放電火花を発生させる。これにより、金線２の先端に第
４図（ａ）に示すようなボール状部２ａが形成される。Thereafter, the gold wire 2 is made to slightly protrude from the tip of the capillary 1, and then the gold wire 2 is clamped using a clamping device (not shown) and cut into pieces. Then, as shown in FIG. 4(e), the discharge electrode 5 is brought close to the capillary 1 in this state, and a high voltage is applied between the gold wire 2 and the discharge electrode 5 to generate discharge sparks. let As a result, a ball-shaped portion 2a as shown in FIG. 4(a) is formed at the tip of the gold wire 2.

このような工程が繰返されてワイヤボンディングが行わ
れる。Wire bonding is performed by repeating these steps.

ところで、このようなワイヤボンディングを行なう場合
には、金線２の接合不良が往々にして起るものであり、
従ってワイヤボンディング時には金線２の接合状態を一
々検査する必要がある。このため、従来では、金線２と
放電電極５との間に高電圧を印加して火花を発生させた
とき流れる放ｆｆｉ？ｌｉ流を検出し、その放電電流の
有無或は大小によって、金線２の先端にボール状部２ａ
が形成されたかどうかを検査する構成とし、ボール状部
２ａが形成されれば、その後の工程で金線２が半導体チ
ップ４の接合点４ａに接合されたものと間接的に判断し
ている。By the way, when performing such wire bonding, poor bonding of the gold wire 2 often occurs.
Therefore, during wire bonding, it is necessary to inspect the bonding state of the gold wires 2 one by one. For this reason, conventionally, when a high voltage is applied between the gold wire 2 and the discharge electrode 5 to generate a spark, the radiation ffi? A ball-shaped portion 2a is formed at the tip of the gold wire 2 depending on the presence or absence or magnitude of the discharge current.
If the ball-shaped portion 2a is formed, it is indirectly determined that the gold wire 2 has been bonded to the bonding point 4a of the semiconductor chip 4 in a subsequent process.

（発明か解決しようとする問題点） 而して、金線２をリードフレーム３の接合点３ａに接合
する場合は、リードフレーム３の強度が大きいので接合
時の押し付は力に余裕を持たせることができるから接合
不良か生ずることはない。(Problem to be solved by the invention) Therefore, when joining the gold wire 2 to the joining point 3a of the lead frame 3, since the strength of the lead frame 3 is large, the pressing force at the time of joining must be applied with sufficient force. Therefore, there is no possibility of poor bonding.

これに対して、金線２を半導体チップ４の接合点４ａに
接合する場合は、半導体チップ４の強度が小さいので接
合時の押し付は力を強くすると半導体チップ４にクラッ
クが生ずる虞がある。このため、実際には接合時の押し
付は力を比較的弱くするようにしており、接合点４ａの
状＠（例えば接合点４ａの電極の厚さ、酸化膜の進み具
合或は表面状態等）が悪いときには、接合不良が生じて
所謂金線切れが起る場合がある。つまり、ボール状部２
ａが形成されたからといって金線２の接合が必ずしも正
しく接合されたとは限らないものである。従って、前記
従来構成の接合状態検査手段では、ボール状部２ａが形
成されたかどうかを検出しているだけで、直接的に金線
２が半導体チップ４の接合点４ａに接合されたことを検
出していないため、誤検出が生じて金線２と接合点４ａ
との間に接合不良が生じた不良品が混在したまま次の工
程へ進むことが多々あり、このような不良品が目視或は
電検による検査工程まで進んでしまうという欠点があっ
た。On the other hand, when bonding the gold wire 2 to the bonding point 4a of the semiconductor chip 4, since the strength of the semiconductor chip 4 is low, there is a risk that cracks may occur in the semiconductor chip 4 if the pressing force is strong during bonding. . For this reason, in practice, the pressing force during bonding is relatively weak, and the condition of the bonding point 4a (for example, the thickness of the electrode at the bonding point 4a, the progress of the oxide film, the surface condition, etc.) ) is bad, bonding failure may occur and so-called gold wire breakage may occur. In other words, the ball-shaped part 2
The formation of the gold wire 2 does not necessarily mean that the gold wire 2 has been properly joined. Therefore, the conventional bonding state inspection means merely detects whether or not the ball-shaped portion 2a is formed, but directly detects that the gold wire 2 is bonded to the bonding point 4a of the semiconductor chip 4. As a result, false detection occurs and gold wire 2 and junction point 4a
There are many cases in which the next process is proceeded with defective products that have bonding defects between the two, and there is a drawback that such defective products proceed to the inspection process by visual inspection or electrical inspection.

そこで、本発明の目的は、ボンディングワイヤを接合点
に接合したときその接合の良否を直接的に検出でき、以
て接合不良状態の誤検出を確実に防１［−シ得るワイヤ
ボンディング装置を提供するにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a wire bonding device that can directly detect the quality of the bond when bonding wire is bonded to a bonding point, thereby reliably preventing erroneous detection of a bonding defect state. There is something to do.

［発明の構成］ （問題点を解決するための手段） 本発明のワイヤボンディング装置は、ボンディングツー
ルから導出されるボンディングワイヤを挟んで対向する
位置に投光部及び受光部を設け、前記ボンディングワイ
ヤを接合点に接合した後にボンディングツールを移動さ
せた状態で、このボンディングツールから導出され且つ
上記接合点まで延びる前記ボンディングワイヤにより前
記投光部からの投光が遮光されることに基づいてそのボ
ンディングワイヤの接合の良否を検出するように構成し
たものである。[Structure of the Invention] (Means for Solving the Problems) The wire bonding apparatus of the present invention includes a light emitting section and a light receiving section that are provided at opposing positions across the bonding wire led out from the bonding tool, and When the bonding tool is moved after bonding to the bonding point, the bonding is performed based on the fact that the light emitted from the light projecting section is blocked by the bonding wire that is led out from the bonding tool and extends to the bonding point. It is configured to detect the quality of the wire bonding.

（作用） ボンディングワイヤが接合点に接合された状態では、ボ
ンディングツールから導出されたボンディングワイヤが
接合点まで延びるようになるから、そのボンディングワ
イヤが投光部からの投光を遮光するようになる。従って
、斯様な遮光状態に基づいてボンディングワイヤの接合
の良否を直接的に検出できる。(Function) When the bonding wire is bonded to the bonding point, the bonding wire led out from the bonding tool extends to the bonding point, so the bonding wire blocks the light emitted from the light projecting section. . Therefore, the quality of bonding of the bonding wire can be directly detected based on such a light shielding state.

（実施例） 以下、本発明の一実施例につき第１図乃至第３図を参照
して説明する。(Embodiment) An embodiment of the present invention will be described below with reference to FIGS. 1 to 3.

まず第１図において、１１はボンディングツールたるキ
ャピラリで、これは従来構成を示す第４図の移動曲線Ａ
に従って移動可能に設けられている。１２はボンディン
グワイヤたる例えば金線で、これはキャピラリ１１を貫
通してこれから導出されるようになっている。１３及び
１４は図示しないワークテーブル上に固定された夫々リ
ードフレーム及び半導体チップであり、これらリードフ
レーム１３及び半導体チップ１４には金線２が接合され
る接合点１３ａ及び１４ａが夫々設けられている。First, in Fig. 1, 11 is a capillary which is a bonding tool, and this corresponds to the movement curve A in Fig. 4, which shows the conventional configuration.
It is movable according to the following. 12 is a bonding wire, for example a gold wire, which passes through the capillary 11 and is led out from there. Reference numerals 13 and 14 denote a lead frame and a semiconductor chip, respectively, which are fixed on a work table (not shown), and the lead frame 13 and semiconductor chip 14 are provided with bonding points 13a and 14a, respectively, to which the gold wire 2 is bonded. .

さて、１５はレーザ投光部で、これには投光用光ファイ
バ１６が取付けられており、これらレーザ投光部１５及
び投光用光ファイバ１６により投光部１７が構成されて
いる。また、１８はレーザ受光部で、これには常時にお
いて投光用光ファイバ１６からのレーザ光を受光するよ
うに配置された受光用光ファイバ１９が取付けられてお
り、これらレーザ受光部１８及び受光用光ファイバ１９
により受光部２０か構成されている。ここで、投光用光
ファイバ１６及び受光用光ファイバ１９は、図示しない
ボンディングヘッドに固定されており、前記キャピラリ
１１から導出された金線１２を挟んで対向するようにな
っていると共に、このような対が第２図に示すように段
数対例えば３対設けられている。これにより、金線１２
がキャピラリ１１と半導体チップ１４の接合点１４ａと
の間に張られていれば、たとえ金線１２が曲がっていて
もこの金線１２の有無を確実に検出できるようになって
いる。そして、レーザ受光部２０にあっては、レーザ投
光部１５からのレーザ光が金線１２によって遮光されて
各受光用光ファイバ１９が非受光状態となった各場合に
夫々遮光信号Ｓｂｉ。Reference numeral 15 denotes a laser projecting section, to which a projecting optical fiber 16 is attached, and the laser projecting section 15 and the projecting optical fiber 16 constitute a projecting section 17. Further, reference numeral 18 denotes a laser light receiving section, to which a light receiving optical fiber 19 arranged so as to always receive the laser light from the light emitting optical fiber 16 is attached. optical fiber 19
The light receiving section 20 is constructed by the following. Here, the light emitting optical fiber 16 and the light receiving optical fiber 19 are fixed to a bonding head (not shown), and are opposed to each other with the gold wire 12 led out from the capillary 11 interposed therebetween. As shown in FIG. 2, such pairs are provided in the number of stages, for example, three pairs. As a result, the gold wire 12
If the gold wire 12 is stretched between the capillary 11 and the junction point 14a of the semiconductor chip 14, the presence or absence of the gold wire 12 can be reliably detected even if the gold wire 12 is bent. The laser light receiving section 20 generates a light blocking signal Sbi in each case when the laser light from the laser projecting section 15 is blocked by the gold wire 12 and each light receiving optical fiber 19 enters a non-light receiving state.

Ｓｂ２．Ｓｂ３を出力するようになっている。Sb2. It is designed to output Sb3.

次に、電気的構成を示す第２図及び第３図において、２
１は制御回路たるＣＰＵて、これは、レーザ投光部１５
に投光信号Ｓａを与えてこれを駆動すると共に、レーザ
受光部１８からの遮光信号５ｂｌ−８ｂ３がオア回路２
２を介して人力されるようになっている。また、ＣＰＵ
２１は、ＸＹ軸移動制御装置２３及び２軸移動制御装置
２４に夫々制御１８号を出力し、以て前記キャピラリ１
１を移動曲線Ａ（第４図参照）に従って移動させるよう
になっている。Next, in FIGS. 2 and 3 showing the electrical configuration, 2
1 is a CPU which is a control circuit, and this is a laser projector 15.
A light emitting signal Sa is given to drive this, and light shielding signals 5bl-8b3 from the laser receiver 18 are sent to the OR circuit 2.
It is designed to be manually operated through 2. Also, CPU
21 outputs control number 18 to the XY-axis movement control device 23 and the two-axis movement control device 24, respectively, so that the capillary 1
1 is moved according to a movement curve A (see FIG. 4).

一方、ＣＰＵ２１は、第３図に示す金線１２の先端にボ
ール状部を形成する工程（前記第４図（ｅ）と同様の工
程）において、放電開始信号Ｓｄを出力する。２５はこ
の放電開始信号Ｓｄを受ける高電圧発生装置で、これは
、スプール２６に巻装された金線１２と、金線１２の先
端と対向する放電電極２７との間に高電圧を印加するよ
うに接続されている。２８は放電電流検出器例えば変流
器で、これは高電圧発生装置２５と放電電極２７との間
を接続する通電路に設けられており、金線１２の先端と
放電電極２７との間に放電が生じたときその放電電流を
検出して放電電流検出信号Ｓｅを出力するようになって
いる。２９は光センサて、これは、金線１２の先端と放
電電極２７との間に生じる放電火花を検出するように設
けられており、その放電火花を検出して火花検出信号Ｓ
ｆを出力するようになっている。３０は検出装置で、こ
れは、ＣＰＵ２１からの放電開始信号Ｓｄ。On the other hand, the CPU 21 outputs a discharge start signal Sd in the step of forming a ball-shaped portion at the tip of the gold wire 12 shown in FIG. 3 (the same step as in FIG. 4(e)). 25 is a high voltage generator that receives this discharge start signal Sd, and this applies a high voltage between the gold wire 12 wound around the spool 26 and the discharge electrode 27 facing the tip of the gold wire 12. are connected like this. Reference numeral 28 denotes a discharge current detector, such as a current transformer, which is provided in the current-carrying path connecting between the high voltage generator 25 and the discharge electrode 27, and between the tip of the gold wire 12 and the discharge electrode 27. When discharge occurs, the discharge current is detected and a discharge current detection signal Se is output. Reference numeral 29 denotes an optical sensor, which is provided to detect discharge sparks generated between the tip of the gold wire 12 and the discharge electrode 27, and detects the discharge sparks to generate a spark detection signal S.
It is designed to output f. 30 is a detection device, which receives a discharge start signal Sd from the CPU 21;

変流器２８からの放電電流検出信号Ｓｅ及び光センサ２
９からの火花検出信号Ｓｆを受けて、金線１２の先端と
放電電極２７との間に放電火花が発生しない状態時即ち
ボール状部が金線１２の先端に形成されなかった状態時
に、ボール非形成信号Ｓｇを出力してＣＰＵ２１に与え
るようになっている。Discharge current detection signal Se from current transformer 28 and optical sensor 2
In response to the spark detection signal Sf from 9, when a discharge spark is not generated between the tip of the gold wire 12 and the discharge electrode 27, that is, when a ball-shaped portion is not formed at the tip of the gold wire 12, the ball A non-forming signal Sg is output and given to the CPU 21.

而して、上記構成の作用についてＣＰＵ２１の機能と共
に説明する。まず、金線１２の先端にボール状部を形成
する工程において、第３図に示すように、ＣＰＵ２１か
ら放電開始信号Ｓｄが出力され、これを受けて高電圧発
生装置２５が高電圧を金線１２と放電電極２７との間に
印加する。これにより、金線１２の先端と放電電極２７
との間に放電火花が生じてボール状部が形成される。こ
のとき、この放電火花を光センサ２９が検出して火花検
出信号Ｓｆを検出装置３０に出力すると共に、高電圧発
生装置２５と放′ｒ５．電極２７との間の通電路に放電
電流が流れるからこれを変流器２８が検出して放電電流
検出信号Ｓｅを検出装置３０に出力する。そして、検出
装置３０は、火花検出信号Ｓｆ及び放電電流検出信号Ｓ
ｅによりボール状部が形成されたことを検出するもので
あり、この場合にはボール非形成信号Ｓｇは出力されな
い。The operation of the above configuration will be explained together with the function of the CPU 21. First, in the step of forming a ball-shaped portion at the tip of the gold wire 12, as shown in FIG. 12 and the discharge electrode 27. As a result, the tip of the gold wire 12 and the discharge electrode 27
A discharge spark is generated between the two and a ball-shaped portion is formed. At this time, the optical sensor 29 detects this discharge spark and outputs a spark detection signal Sf to the detection device 30, and also outputs a spark detection signal Sf to the detection device 30 and the high voltage generator 25 and the discharge spark. Since a discharge current flows through the current-carrying path between the electrode 27 and the electrode 27, the current transformer 28 detects this and outputs a discharge current detection signal Se to the detection device 30. Then, the detection device 30 receives a spark detection signal Sf and a discharge current detection signal S.
The formation of a ball-shaped portion is detected by e, and in this case, the ball non-formation signal Sg is not output.

これに対して、金線１２の先端と放電電極２７との間に
放電火花か生じなかったときは、光センサ２９が放電火
花を検出しないから火花検出信号Ｓｆを検出装置３０に
出力しない。また、高電圧発生装置２５と放電電極２７
との間の通電路に放電電流が流れないから、変流器２８
が放ｍ　ＦＩｉ流検出信号Ｓｅを検出装置３０に出力し
ない。従って、検出装置３０は、ボール状部が形成され
ていないことを検出するから、ボール非形成信号Ｓｇを
出力してＣＰＵ２１に与える。この結果、ＣＰＵ２１は
、以下に続く工程を停止する。On the other hand, when no discharge spark is generated between the tip of the gold wire 12 and the discharge electrode 27, the optical sensor 29 does not detect the discharge spark and therefore does not output the spark detection signal Sf to the detection device 30. In addition, the high voltage generator 25 and the discharge electrode 27
Since no discharge current flows in the current-carrying path between the current transformer 28
does not output the FIi flow detection signal Se to the detection device 30. Therefore, since the detection device 30 detects that no ball-shaped portion is formed, it outputs a ball non-formation signal Sg and provides it to the CPU 21. As a result, the CPU 21 stops the steps that follow.

次に、金線１２の先端にボール状部を形成した後、キャ
ピラリ１１を半導体チップ１４の接合点１４ａ上に下降
させて金線１２を接合点１４ａに超音波溶着により接合
する。接合後、第１図に示すようにキャピラリ１１を移
動させた状態において、金線１２はキャピラリ１１から
導出され且つ接合点１４ａまで延びるようになる。この
ような状態で、ＣＰＵ２１から投光信号Ｓａか出力され
てレーザ投光部１５に与えられるものであり、これに応
じてレーザ投光部１５からのレーザ光が投光用光ファイ
バ１６を介して投光される。而して、この場合には、レ
ーザ光が上記のように接合された金線１２により遮光さ
れるから、受光用光ファイバ１９が非受光状態となって
、レーザ受光部１８から遮光信号Ｓｂ、−５ｂ、が出力
され、これらがオア回路２２を介してＣＰＵ２１に与え
られる。この結果、ＣＰＵ２１は、金線１２の接合点１
４ａへの接合が確実に行われたことを検出し、以て以下
に続く工程を実行する。ここで反対に、金線１２を接合
点１４ａに接合したときに接合不良がある場合は、キャ
ピラリ１１を移動させた状態において、金線１２の弛み
防止用のエアなどによるテンションが金線１２を上方に
付勢しているので、このような状態では、レーザ投光部
１５から投光用光ファイバ１６を介して投光されたレー
ザ光は、金線１２により遮光されることなく、受光用光
ファイバ１９を介してレーザ受光部１８に受光される。Next, after forming a ball-shaped portion at the tip of the gold wire 12, the capillary 11 is lowered onto the bonding point 14a of the semiconductor chip 14, and the gold wire 12 is bonded to the bonding point 14a by ultrasonic welding. After bonding, with the capillary 11 moved as shown in FIG. 1, the gold wire 12 is led out from the capillary 11 and extends to the bonding point 14a. In this state, the light projection signal Sa is outputted from the CPU 21 and given to the laser projection section 15, and in response to this, the laser beam from the laser projection section 15 is transmitted through the projection optical fiber 16. light is projected. In this case, since the laser beam is blocked by the gold wire 12 bonded as described above, the light receiving optical fiber 19 is in a non-light receiving state, and the light blocking signal Sb, -5b are output, and these are given to the CPU 21 via the OR circuit 22. As a result, the CPU 21 selects the connection point 1 of the gold wire 12.
It is detected that the bonding to 4a has been reliably performed, and then the following steps are executed. On the contrary, if there is a defective bond when the gold wire 12 is bonded to the bonding point 14a, when the capillary 11 is moved, the tension caused by the air to prevent the gold wire 12 from loosening may cause the gold wire 12 to Since the force is applied upward, in such a state, the laser light emitted from the laser light emitting section 15 via the light emitting optical fiber 16 is not blocked by the gold wire 12 and is transmitted through the light receiving optical fiber 16. The light is received by the laser light receiving section 18 via the optical fiber 19.

これにより、レーザ受光部１８から遮光信号Ｓｂ、〜Ｓ
ｂ３が出力されない。この結果、ＣＰＵ２１は、金線１
２の接合点１４ａへの接合不良を検出し、以て以下に続
く工程を停止する。As a result, the light-shielding signals Sb, ~S
b3 is not output. As a result, the CPU 21
2 to the joint point 14a is detected, and the subsequent steps are stopped.

要するに上記構成の本実施例では、投光部１７及び受光
部２０によって、従来とは異なり金線１２の接合の良否
を直接的に検出できるものであり、以て誤検出を防止し
得る。また、金線１２の先端と放電電極２７との間に生
じる放電火花を検出する光センサ２９を設けたので、放
電電流だけを検出する従来（この場合、金線２と放電電
極５が接触するために放電火花が発生せずに電流が流れ
る場合がありしばしば誤検出が発生する）に比べ、金線
１２の先端にボール状部が形成されたことを確実に検出
できるから、ボール状部が非形成のままでこれに続く工
程に進むことを防止し得る。In short, in this embodiment with the above configuration, the light emitting section 17 and the light receiving section 20 can directly detect whether the bonding of the gold wire 12 is good or not, unlike the conventional method, and thus erroneous detection can be prevented. In addition, an optical sensor 29 is provided to detect discharge sparks generated between the tip of the gold wire 12 and the discharge electrode 27. In contrast, the formation of a ball-shaped portion at the tip of the gold wire 12 can be reliably detected, compared to the case where a current flows without generating a discharge spark, which often results in false detection. It can be prevented from proceeding to the subsequent step without formation.

尚、１−記実施例では、変流器２８及び光センサ２９を
設けたが、これらは必要に応じて設ければ良く、また、
どちらか一方だけを設けるようにしても良い等、その要
旨を逸脱しない範囲で種々の鹿形が可能である。In addition, although the current transformer 28 and the optical sensor 29 were provided in the first embodiment, these may be provided as necessary.
Various deer shapes are possible without departing from the gist, such as only one of them may be provided.

［発明の効果コ 本発明は以上の説明から明らかなように、ボンディング
ツールから導出されるボンディングワイヤを挟んで対向
する位置に投光部及び受光部を設け、前記ボンディング
ワイヤを接合点に接合した後にボンディングツールを移
動させた状態でこのボンディングツールから導出され且
つ上記接合点まで延びる前記ボンディングワイヤにより
前記投光部からの投光が遮光されることに基づいてその
ボンディングワイヤの接合の良否を検出するように構成
したので、ボンディングワイヤを接合点に接合したとき
その接合の良否を直接的に検出でき、誤検出を防止し得
るという優れた効果を奏する。[Effects of the Invention] As is clear from the above description, the present invention provides a light emitting part and a light receiving part at opposing positions across the bonding wire led out from the bonding tool, and joins the bonding wire to the bonding point. Later, with the bonding tool moved, the quality of the bonding of the bonding wire is detected based on the fact that the light emitted from the light emitting part is blocked by the bonding wire that is led out from the bonding tool and extends to the bonding point. With this configuration, when the bonding wire is bonded to the bonding point, the quality of the bond can be directly detected, and erroneous detection can be prevented, which is an excellent effect.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図乃至第３図は本発明の一実施例を示すもので、第
１図は要部の側面図、第２図及び第３図は夫々異なる部
分の電気的構成図であり、第４図は従来構成における接
合工程の各状態を示す図である。 図面中、１１はキャピラリ　（ボンディングツール）、
１２は金線（ボンディングワイヤ）、１４ａは接合点、
１７は投光部、２０は受光部を示す。1 to 3 show one embodiment of the present invention, in which FIG. 1 is a side view of the main parts, FIGS. 2 and 3 are electrical configuration diagrams of different parts, and FIG. The figure is a diagram showing each state of the bonding process in the conventional configuration. In the drawing, 11 is a capillary (bonding tool),
12 is a gold wire (bonding wire), 14a is a bonding point,
17 is a light projecting section, and 20 is a light receiving section.

Claims (1)

【特許請求の範囲】[Claims] １、移動可能なボンディングツールから導出されたボン
ディングワイヤを接合点に接合するワイヤボンディング
装置において、前記ボンディングツールから導出される
ボンディングワイヤを挟んで対向する位置に投光部及び
受光部を設け、前記ボンディングワイヤを前記接合点に
接合した後に前記ボンディングツールを移動させた状態
でこのボンディングツールから導出され且つ上記接合点
まで延びる前記ボンディングワイヤにより前記投光部か
らの投光が遮光されることに基づいてそのボンディング
ワイヤの接合の良否を検出するようにしたことを特徴と
するワイヤボンディング装置。1. In a wire bonding device for bonding a bonding wire led out from a movable bonding tool to a bonding point, a light emitting part and a light receiving part are provided at positions facing each other across the bonding wire led out from the bonding tool, and the Based on the fact that after the bonding wire is bonded to the bonding point and the bonding tool is moved, the light emitted from the light projecting section is blocked by the bonding wire that is led out from the bonding tool and extends to the bonding point. A wire bonding apparatus characterized in that the quality of the bonding of the bonding wire is detected by using the bonding wire.
JP61225710A 1986-09-24 1986-09-24 Wire bonding apparatus Pending JPS6380547A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61225710A JPS6380547A (en) 1986-09-24 1986-09-24 Wire bonding apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61225710A JPS6380547A (en) 1986-09-24 1986-09-24 Wire bonding apparatus

Publications (1)

Publication Number Publication Date
JPS6380547A true JPS6380547A (en) 1988-04-11

Family

ID=16833590

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61225710A Pending JPS6380547A (en) 1986-09-24 1986-09-24 Wire bonding apparatus

Country Status (1)

Country Link
JP (1) JPS6380547A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01268140A (en) * 1988-04-20 1989-10-25 Matsushita Electric Ind Co Ltd Wire bonding device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01268140A (en) * 1988-04-20 1989-10-25 Matsushita Electric Ind Co Ltd Wire bonding device

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