JPH06347417A - Screening device and semiconductor device - Google Patents

Abstract

PURPOSE:To carry out screening of a semiconductor device after a resin seal reliably in a short time by carrying out inspection electrically on a crack or a broken piece or the like of a semiconductor chip. CONSTITUTION:An infrared laser, beam outputted by an output means 8 is radiated on the whole side surface of a semiconductor chip, and passes through the semiconductor chip, and is received by a beam receiving means 9. An electric signal converted by the beam receiving means 9 is inputted to a transmissivity measuring device or the like, and transmissivity is measured, and is compared with transmissivity of a semiconductor chip of good quality. When failure such as a crack or a broken piece exists in the semiconductor chip, since the infrared laser beam is attenuated and the transmissivity is reduced, it is detected as a failure semiconductor chip when the transmissivity is lower than that of the semiconductor chip.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for detecting cracks or chips in a semiconductor chip, and is particularly effective when applied to a technique for detecting defective semiconductor chips such as cracks or chips in a semiconductor chip after resin molding. It is about technology.

[0002]

2. Description of the Related Art In recent years, a semiconductor chip such as a highly integrated semiconductor circuit device has a problem that the semiconductor chip is cracked or chipped because the distance between the element end and the circuit pattern is small with the increase in size of the semiconductor integrated circuit. Has become.

In order to inspect the semiconductor chip for cracks, chips, etc., for example, a defective semiconductor chip is screened by visual inspection in each process such as dicing and wire bonding.

[0004]

However, since the appearance inspection of the semiconductor chip is a visual inspection by a person using a microscope, it is impossible to detect a defective semiconductor chip after resin molding.

Further, there is a possibility that the detection ability may vary depending on the skill level of the operator and the defective semiconductor chips may not be screened.

Further, defective semiconductor chips, such as minute cracks and chips, which cannot be found even by visual inspection, are shipped as they are, and there is a risk that defects such as moisture resistance will occur during use by the user.

An object of the present invention is to provide a semiconductor chip screening apparatus and a semiconductor element capable of screening defective semiconductor chips even after resin sealing by electrically inspecting semiconductor chips for cracks and chips. To provide.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0009]

Among the inventions disclosed in the present application, a brief description will be given to the outline of typical ones.
It is as follows.

That is, according to one aspect of the present invention, there is provided an output means arranged on one side of a semiconductor device for outputting an infrared laser, and an infrared laser outputted from the output means for receiving and converting the infrared laser into an electric signal. And light receiving means arranged on the opposite side of the output means.

Further, according to another invention of the present application, the transmittance of the semiconductor chip is measured by irradiating the side surface of the semiconductor chip with the infrared laser output from the output means and receiving the infrared laser transmitted through the semiconductor chip by the light receiving means. By doing so, cracking and chipping of the semiconductor chip can be detected.

Further, according to another invention of the present application, output means for outputting an infrared laser embedded in one side of the semiconductor chip and infrared laser output from the output means embedded in the opposite side of the output means are received. And a light receiving means for converting into an electric signal.

Still another invention of the present application is to detect a crack or a chip of a semiconductor chip by receiving the infrared laser outputted from the output means by the light receiving means and measuring the transmittance of the semiconductor chip. is there.

Still another invention of the present application is that an oscillating means for oscillating an ultrasonic wave is embedded in one side of a semiconductor chip and the ultrasonic wave is oscillated to grow cracks and chips in the semiconductor chip.

[0015]

According to the above-described screening device and semiconductor device, a defective semiconductor chip is cracked, chipped, or the like is electrically detected. Therefore, even in the semiconductor device after resin molding, the semiconductor chip can be reliably and quickly processed. It can detect cracks and chips.

As a result, a semiconductor device using a defective semiconductor chip having minute cracks or chips which cannot be detected by visual inspection with a microscope is not shipped, and the reliability of the semiconductor device is improved.

[0017]

EXAMPLES Examples of the present invention will be described in detail below.

(Embodiment 1) FIG. 1 is a schematic sectional view of a semiconductor device screened by a screening apparatus according to Embodiment 1 of the present invention, and FIG. 2 is a side view of a screening apparatus according to Embodiment 1 of the present invention. .

In the first embodiment, as shown in FIG.
A tab 3 is located at the center of the molded package 2 of the semiconductor device 1, and the tab 3 and the semiconductor chip 4 are
It is adhered by the adhesive material 5. Also, package 2
The lead frame 6 which is the conductive portion of the inner lead 6a
And the outer lead 6b.

A bonding pad (not shown) which is a conductive portion of the semiconductor chip 4 and an inner lead 6a in the package 2 are electrically connected by a wire 7.

As shown in FIG. 2, the screening device includes an output means 8 for outputting an infrared laser such as a laser diode, and a photodiode for converting the output infrared laser into an electric signal. The light receiving means 9 and the light receiving means 9 are arranged on opposite sides of the semiconductor device 1. Then, the electrical signal converted by the light receiving means 9 is input to a transmittance measuring device (not shown) or the like.

Next, the operation of this embodiment will be described.

The infrared laser output by the output means 8 is applied to the entire side surface of the semiconductor chip 4 arranged in the central portion of the semiconductor device 1. The irradiated infrared laser passes through the semiconductor chip 4 and is received by the light receiving means 9.

Next, the infrared laser beam received by the light receiving means 9 is converted into an electric signal, and the electric signal is input to a transmittance measuring device or the like to measure the transmittance. At this time, if the semiconductor chip 4 has a defect such as a crack or a chip,
Since the infrared laser is scattered and attenuated due to cracks and chips of the semiconductor chip, the transmittance is lowered.

Therefore, the transmittance of the good semiconductor chip is measured in advance, and if the transmittance of the semiconductor chip 4 is lower than that of the good semiconductor chip, it is detected as a defective semiconductor chip.

Therefore, in the first embodiment, even if the semiconductor device 1 is molded, the semiconductor chip 4 is surely produced.
Since cracks, chips, and the like can be detected, the reliability of the semiconductor device 1 is improved.

(Embodiment 2) FIG. 3 is a plan view of a semiconductor chip in which a screening element according to Embodiment 2 of the present invention is embedded, and FIG. 4 is a plan view of a semiconductor chip in which the screening element according to Embodiment 2 of the present invention is embedded. It is a sectional view of a semiconductor device using a semiconductor chip.

In the second embodiment, as shown in FIG. 3, the output means 8 for outputting an infrared laser such as a laser diode is embedded in the entire side surface of one side of the semiconductor chip 4.

Further, a light receiving means 9 such as a photodiode for receiving the output infrared laser and converting it into an electric signal is embedded in the entire side surface of the opposite side.

The embedded output means 8 and light-receiving means 9 are connected to the bonding pads 4a and 4b formed on the semiconductor chip 4. Further, the bonding pads 4a and 4b and the inner lead 6a are electrically connected by the wire 7, and the outer lead 6
By b, the power supply necessary for the output of the infrared laser is supplied and the electric signal converted by the light receiving means 9 is output.

Next, the infrared laser output from the output means 8 is transmitted through the semiconductor chip 4 and received by the light receiving means 9 embedded in the opposite surface. The received infrared laser is converted into an electric signal by the receiving means 9,
The electrical signal is input to a transmittance measuring device or the like to measure the transmittance. At this time, if the semiconductor chip 4 has a defect such as a crack or a chip, the infrared laser is attenuated by the defective portion, so that the transmittance is reduced.

Therefore, the transmittance of a good semiconductor chip is measured in advance, and if the transmittance of the semiconductor chip 4 is lower than that of the good semiconductor chip, it is detected as a defective semiconductor chip.

Therefore, also in the second embodiment, the semiconductor chip 4 is surely applied to the semiconductor device 1 after being molded.
Since cracks, chips, and the like can be detected, the reliability of the semiconductor device 1 is improved.

(Embodiment 3) FIG. 5 is a plan view of a semiconductor chip in which an ultrasonic transducer according to a third embodiment of the present invention is embedded,
FIG. 6 is a sectional view of a semiconductor device using a semiconductor chip in which an ultrasonic transducer according to a third embodiment of the present invention is embedded.

In the third embodiment, the oscillating means 10 such as an ultrasonic oscillator for oscillating ultrasonic waves is embedded in the entire side surface of one side of the semiconductor chip 4.

The embedded oscillating means 10 is
Bonding pad 4c formed on semiconductor chip 4
, The bonding pad 4c and the inner lead 6a are electrically connected by the wire 7, and the outer lead 6b supplies power required for ultrasonic wave oscillation.

Next, the ultrasonic wave oscillated from the oscillating means 10 for a predetermined time vibrates the semiconductor chip 4, and if there is a minute crack or chip which cannot be detected by visual inspection, the crack or chip. Grows defects such as, and leads to complete destruction. After that, the semiconductor device 1 is electrically inspected to screen defective semiconductor chips.

Therefore, in the third embodiment, even if the semiconductor device 1 is molded, the semiconductor chip 4 can be surely processed.
Since cracks, chips, and the like can be detected, the reliability of the semiconductor device 1 is improved.

The invention made by the present inventor has been described above based on the embodiments, but the present invention is not limited to the embodiments, and various modifications can be made without departing from the scope of the invention. There is no end.

For example, by arranging an oscillating means such as an ultrasonic oscillator for oscillating ultrasonic waves on one side of the semiconductor device and vibrating the semiconductor chip, defects such as cracks and chips grow and complete destruction occurs. After that, the defective semiconductor chips may be screened by electrically inspecting the semiconductor device after that.

[0041]

Of the inventions disclosed by the present invention,
The following is a brief description of the effects obtained by the typical ones.

(1) According to the present invention, semiconductor chip defects such as minute cracks and chips that cannot be detected by visual inspection can be reliably detected in a short time even after molding.

(2) Further, according to the above (1), the semiconductor device of the defective semiconductor chip is prevented from being shipped by mistake, so that the reliability of the semiconductor device is improved.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view of a semiconductor device screened by a screening device according to a first embodiment of the present invention.

FIG. 2 is a side view of the screening apparatus according to the first embodiment of the present invention.

FIG. 3 is a plan view of a semiconductor chip in which a screening element according to a second embodiment of the present invention is embedded.

FIG. 4 is a sectional view of a semiconductor device using a semiconductor chip in which a screening element according to a second embodiment of the present invention is embedded.

FIG. 5 is a plan view of a semiconductor chip having an ultrasonic transducer embedded therein according to a third embodiment of the present invention.

FIG. 6 is a sectional view of a semiconductor device using a semiconductor chip in which an ultrasonic transducer according to a third embodiment of the present invention is embedded.

[Explanation of symbols]

 1 Semiconductor Device 2 Package 3 Tab 4 Semiconductor Chip 4a Bonding Pad 4b Bonding Pad 4c Bonding Pad 5 Adhesive 6 Lead Frame 6a Inner Lead 6b Outer Lead 7 Wire 8 Output Means 9 Light Receiving Means 10 Oscillating Means

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Junichi Arita 5-20-1 Kamimizuhonmachi, Kodaira-shi, Tokyo Hitachi, Ltd. Semiconductor Division

Claims (5)

[Claims] 1. An output means for outputting an infrared laser disposed on one side of a semiconductor device, and an opposite side of the output means for receiving the infrared laser output from the output means and converting the infrared laser into an electric signal. And a light receiving unit disposed in the screening device. 2. A side surface of a semiconductor chip is irradiated with an infrared laser output from the output means, the infrared laser transmitted through the semiconductor chip is received by the light receiving means, the transmittance is measured, and the semiconductor chip is cracked. The screening device according to claim 1, wherein a chipping is detected. 3. An output means embedded in one side of a semiconductor chip for outputting an infrared laser, and an infrared laser emitted from the output means embedded in the opposite side of the output means are received and converted into an electrical signal. A semiconductor device comprising: 4. An infrared laser output from the output means is received by the light receiving means and the transmittance of the semiconductor chip is measured to detect cracks and chips in the semiconductor chip. 3. The semiconductor device according to item 3. 5. A semiconductor device, characterized in that an oscillating means for oscillating ultrasonic waves is embedded in one side of a semiconductor chip, and the ultrasonic waves are oscillated to grow cracks and chips in the semiconductor chip.